A semiconductor processing apparatus

Abstract

The application discloses a semiconductor processing equipment, which comprises a reaction cavity, a rotatable susceptor arranged at the bottom of the reaction cavity, a shower head arranged at the top of the reaction cavity and used for introducing process gas into the reaction cavity to process a substrate, and a gas extraction ring arranged around the susceptor and used for extracting excess gas in the process to the outside of the reaction cavity. The gas extraction ring comprises a ring-shaped shell fixed in the reaction cavity, a gas chamber with openings facing the susceptor, and a gas extraction port for connecting the gas chamber with the outside of the reaction cavity, wherein the openings are continuously distributed along the circumference of the ring-shaped shell; at least one baffle is arranged in the gas chamber and along the circumference of the ring-shaped shell; the baffle is arranged on the inner side of the gas extraction port, and a first gas passage is arranged on the baffle, so that the excess gas flows to the outside of the reaction cavity through the openings, the first gas passage and the gas extraction port. The application can ensure the uniformity of the gas flow distribution on the outer circumferential side of the susceptor and the uniformity of the gas extraction.

Description

Technical Field

[0001] This invention relates to the field of semiconductor fabrication technology, and more particularly to a semiconductor processing apparatus. Background Technology

[0002] In the semiconductor fabrication process, such as Figure 1 As shown, process gas is introduced into reaction chamber 2 through spray head 1 to process the substrate supported on base 3; during the process, excess process gas and reaction byproducts can be extracted to the outside of reaction chamber 2 through pumping ring 4 arranged around base 3.

[0003] Most existing suction rings 4 have discrete holes 42 machined on their shells 41. This causes the airflow to split within the reaction chamber 2 as it is drawn through the discrete holes 42, resulting in a very uneven circumferential distribution of airflow velocity near the holes 42. As the rotational speed of the base 3 increases, there is even a risk of changes in the flow field state, which can easily lead to side effects, such as entraining reaction byproducts onto the substrate, causing substrate contamination. Therefore, it is necessary to adjust the structure of the suction ring. Summary of the Invention

[0004] The purpose of this invention is to provide a semiconductor processing device that can ensure the uniformity of airflow distribution on the outer periphery of the base and the uniformity of gas extraction.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0006] A semiconductor processing apparatus, comprising:

[0007] reaction chamber;

[0008] A rotatable base is located at the bottom of the reaction chamber to support the substrate;

[0009] A spray head, disposed at the top of the reaction chamber, is used to introduce process gas into the reaction chamber to process the substrate; and

[0010] A vacuum ring, arranged around the base, is used to extract excess gas during the process to the outside of the reaction chamber;

[0011] The suction ring includes:

[0012] An annular shell is fixed inside the reaction chamber; the annular shell has a gas chamber with an opening facing the base and an exhaust port that connects the gas chamber to the outside of the reaction chamber, and the opening is continuously distributed along the circumference of the annular shell;

[0013] At least one baffle is located in the gas chamber and is arranged circumferentially along the annular shell; the baffle is arranged inside the exhaust port and the baffle is provided with a first gas channel so that excess gas flows out of the reaction chamber through the opening, the first gas channel and the exhaust port.

[0014] Optionally, the annular housing includes a top end and a bottom end disposed opposite to each other, and a first guide plate extending downward along the inner edge of the top end of the annular housing, wherein the opening is formed between the first guide plate and the bottom end of the annular housing.

[0015] Optionally, the annular shell further includes: a second guide plate extending upward along the inner edge of the bottom end of the annular shell; and the outer diameter of the second guide plate is larger than the inner diameter of the first guide plate.

[0016] Optionally, the vertical distance between the top end of the second guide plate and the bottom end of the annular shell is less than the vertical distance between the bottom end of the first guide plate and the bottom end of the annular shell, and the opening is formed between the first guide plate and the second guide plate.

[0017] Optionally, the vertical distance between the top end of the second guide plate and the bottom end of the annular shell is greater than or equal to the vertical distance between the bottom end of the first guide plate and the bottom end of the annular shell, and a second gas channel communicating with the opening is formed between the first guide plate and the second guide plate.

[0018] Optionally, the vertical distance between the bottom end of the first guide plate and the bottom end of the annular shell is less than or equal to 1 / 3 of the vertical distance between the top end and the bottom end of the annular shell.

[0019] Optionally, the vertical distance between the top end of the second guide plate and the bottom end of the annular shell is 1 / 100 to 1 / 2 of the vertical distance between the top end and the bottom end of the annular shell.

[0020] Optionally, when the number of baffles is one, the horizontal distance between the first guide plate and the baffle is 1 / 20 to 1 / 2 of the horizontal distance between the first guide plate and the outer wall of the annular shell.

[0021] Optionally, when there are multiple baffles, the horizontal distance between the first guide plate and the innermost baffle, as well as the horizontal distance between two adjacent baffles, is 1 / 20 to 1 / 2 of the horizontal distance between the first guide plate and the outer wall of the annular shell.

[0022] Optionally, when there are multiple baffles, the first gas passages on two adjacent baffles are located at different horizontal heights.

[0023] Optionally, the vertical distance between the bottom end of the first gas channel and the bottom end of the annular shell is greater than or equal to 2 / 3 of the vertical distance between the top end and the bottom end of the annular shell.

[0024] Optionally, the first gas passage includes a plurality of through holes spaced apart circumferentially along the baffle.

[0025] Optionally, the diameter of the plurality of through holes increases from the direction closest to the air extraction port to the direction furthest from the air extraction port.

[0026] Optionally, the first gas passage includes an annular slit arranged circumferentially along the baffle.

[0027] Optionally, the width of the annular slit increases from near the air extraction port to away from the air extraction port.

[0028] Optionally, the ventilation area of ​​the first gas channel can be adjusted.

[0029] Optionally, the semiconductor processing device further includes: an adjustment plate; the adjustment plate is slidably connected to the baffle in the vertical direction for adjusting the ventilation area of ​​the first gas channel.

[0030] Optionally, the semiconductor processing apparatus further includes: a baffle ring located between the suction ring and the base, and disposed around the base; and the baffle ring having an annular inclined surface that slopes outward from top to bottom to guide excess gas flow toward the opening.

[0031] Optionally, the bottom end of the annular inclined surface is not lower than the top end of the second guide plate.

[0032] Optionally, the semiconductor processing apparatus further includes: a liner surrounding the spray head; the liner is movable between a process position and a wafer pick-up position, and the outer diameter of the liner is smaller than the inner diameter of the first guide plate.

[0033] Optionally, when the liner is in the process position, the bottom end of the liner is lower than the top end of the annular shell.

[0034] Compared with the prior art, the present invention has at least one of the following advantages:

[0035] The present invention provides a semiconductor processing device, wherein the suction ring includes an annular shell, the annular shell having a gas chamber with an opening facing the base and a suction port that connects the gas chamber to the outside of the reaction chamber; and the openings are continuously distributed along the circumference of the annular shell, making the openings annular slits distributed along the circumference of the annular shell. In this way, during the process of excess gas being extracted from the reaction chamber, it can be ensured that the excess gas enters the gas chamber without being cut through through the continuously distributed openings, so that the airflow formed by the excess gas remains intact in the reaction chamber (i.e., before entering the suction ring), thereby avoiding the situation in the prior art where the airflow separates in the reaction chamber when it is extracted. This greatly ensures the uniformity of the airflow distribution on the outer periphery of the base, thereby reducing the risk of changes in the flow field state due to the increase of the base rotation speed.

[0036] In this invention, a baffle with a first gas channel is provided within the gas chamber. Excess gas enters the gas chamber through the opening without being cut, flows along the baffle to the first gas channel, and then flows to the extraction port and is extracted outside the reaction chamber. The baffle effectively increases the friction resistance of excess gas flowing from the opening through the first gas channel to the extraction port, thereby ensuring the uniformity of gas extraction and further ensuring the uniformity of airflow distribution on the outer periphery of the base.

[0037] In this invention, a second guide plate extends upward along the inner edge of the bottom end of the annular shell, and the outer diameter of the second guide plate is larger than the inner diameter of the first guide plate. In this invention, a dust accumulation area can be formed between the second guide plate and its adjacent baffle, so that when excess gas in the reaction chamber is pumped away, the reaction byproducts fall into the dust accumulation area, thereby preventing the reaction byproducts from being rolled up when the base rotates at high speed, thus avoiding contamination of the substrate and affecting the substrate preparation yield.

[0038] In this invention, when the excess gas is extracted to the outside of the reaction chamber by using a vacuum ring to evacuate the reaction chamber, the gas flow field inside the reaction chamber is relatively stable. This can avoid dust generation caused by cutting the flow field in the process area, thereby improving the wafer preparation yield and reducing material waste and additional energy consumption caused by quality problems, which is conducive to low carbon and environmental protection. Attached Figure Description

[0039] Figure 1 A schematic diagram of the structure of a semiconductor processing device in the prior art;

[0040] Figure 2 This is a schematic diagram of the structure of a semiconductor processing device provided in an embodiment of the present invention;

[0041] Figure 3 This is a perspective view of a vacuum ring in a semiconductor processing device according to an embodiment of the present invention;

[0042] Figure 4This is a perspective view of the suction ring provided in another embodiment of the present invention;

[0043] Figure 5 This is a cross-sectional schematic diagram of the suction ring provided in another embodiment of the present invention;

[0044] Figure 6 This is a schematic diagram of the structure of a semiconductor processing device provided in another embodiment of the present invention;

[0045] Figure 7 This is a perspective view of the suction ring provided in another embodiment of the present invention;

[0046] Figure 8 This is a diagram showing the gas flow rate at the opening when using the suction ring provided in this invention for suction.

[0047] Figure 9 It is a diagram of gas velocity at discrete holes when using an extraction ring in existing technology for gas extraction.

[0048] Figure 10 This is a comparison diagram of the gas flow rate around the substrate when using the suction ring provided in this invention and the suction ring in the prior art for evacuation.

[0049] Figure 11 This is a schematic diagram of the gas flow direction in the reaction chamber when the gas extraction ring provided in this invention is used for gas extraction. Detailed Implementation

[0050] The semiconductor processing device proposed in this invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clarify the explanation of the embodiments of this invention. Please refer to the drawings to make the objectives, features, and advantages of this invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of this invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by this invention, should still fall within the scope of the technical content disclosed in this invention.

[0051] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0052] Combined with appendix Figures 2-6 As shown, this embodiment provides a semiconductor processing apparatus, including: a reaction chamber 110, a rotatable base 120, a spray head 140, and a vacuum ring 200. The base 120 is disposed at the bottom of the reaction chamber 110 and is used to support a substrate (not shown in the figure). The spray head 140 is disposed at the top of the reaction chamber 110, opposite to the base 120; the spray head 140 is used to introduce process gases into the reaction chamber 110 to perform process processing on the substrate (e.g., deposition reaction, plasma etching, etc.). The vacuum ring 200 is disposed around the base 120 and is used to extract excess gas during the process to the outside of the reaction chamber 110 to maintain the cleanliness and vacuum environment inside the reaction chamber 110, thereby ensuring the substrate fabrication yield. It is understood that excess gas includes at least unreacted process gases and reaction byproducts generated during the process.

[0053] Please continue to refer to this. Figure 2 The suction ring 200 includes an annular housing 210 and at least one baffle 220. The annular housing 210 is fixed within the reaction chamber 110 and surrounds the base 120; the annular housing 210 has a gas chamber 212 with an opening 211 facing the base 120, and a suction port 213 communicating the gas chamber 212 with the outside of the reaction chamber 110; and the opening 211 is continuously distributed circumferentially along the annular housing 210 (e.g., ...). Figure 3 , Figure 4 and Figure 5(As shown). The baffle 220 is located inside the gas chamber 212 and is arranged circumferentially along the annular shell 210; the baffle 220 is disposed inside the exhaust port 213, which means that the inside of the exhaust port 213 refers to the side from the exhaust port 213 to the base 120. The baffle 220 is provided with a first gas channel 221 so that excess gas flows out of the reaction chamber 110 through the opening 211, the first gas channel 221, and the exhaust port 213.

[0054] In this embodiment, the openings 211 are continuously distributed along the circumference of the annular shell 210, such that the openings 211 are annular gaps distributed along the circumference of the annular shell 210 (e.g., Figure 3 , Figure 4 and Figure 5 As shown in the figure, during the process of extracting excess gas from the reaction chamber 110 to the outside of the reaction chamber 110, it can be ensured that the excess gas enters the gas chamber 212 without being cut through through the continuously distributed openings 211. This ensures that the airflow formed by the excess gas remains intact within the reaction chamber 110 (i.e., before entering the suction ring 200), thereby avoiding the situation in the prior art where the airflow separates within the reaction chamber when it is extracted. This greatly ensures the uniformity of the airflow distribution on the outer periphery of the base 120, reducing the risk of changes in the flow field state due to the increase in the rotational speed of the base 120. Optionally, the suction port 213 is connected to a suction pump (not shown in the figure) to extract excess gas from the reaction chamber 110 to the outside of the reaction chamber 110 through the openings 211, the first gas channel 221, and the suction port 213. However, the present invention is not limited thereto.

[0055] Furthermore, the gas chamber 212 is provided with a baffle 220 having the first gas passage 221; and excess gas, after entering the gas chamber 212 without being cut through the continuously distributed openings 211, flows along the baffle 220 to the first gas passage 221, and then to the extraction port 213. In this embodiment, the baffle 220 can effectively increase the friction resistance of excess gas flowing from the opening 211 through the first gas passage 221 to the extraction port 213, thereby ensuring the uniformity of the extraction of excess gas and further ensuring the uniformity of the airflow distribution on the outer periphery of the base 120.

[0056] Please continue to refer to this. Figure 3 The annular housing 210 includes a top end 2101 and a bottom end 2102 disposed opposite to each other, an outer side wall 2105 connected to the outer edges of the top end 2101 and the bottom end 2102, and a first guide plate 2103 extending downward along the inner edge of the top end 2101 of the annular housing 210.

[0057] Specifically, in one embodiment, the top end 2101, bottom end 2102, outer side wall 2105, and first guide plate 2103 of the annular shell 210 together form the gas chamber 212; and the opening 211 is formed between the first guide plate 2103 and the bottom end 2102 of the annular shell, so that the opening 211 is an annular gap distributed circumferentially along the annular shell 210 and the opening 211 faces the base 120, thereby ensuring that when excess gas is drawn away, it can enter the gas chamber 212 without being cut through the opening 211. Optionally, the vertical distance h1 between the bottom end of the first guide plate 2103 and the bottom end 2102 of the annular shell 210 is less than or equal to 1 / 3 of the vertical distance h4 between the top end 2101 and the bottom end 2102 of the annular shell 210, so as to ensure that the excess gas has a large frictional resistance from the opening 211 to the first gas channel 221, thereby ensuring the uniformity of the extraction of excess gas, but the present invention is not limited thereto.

[0058] Please continue to refer to this. Figure 4 and Figure 5 The annular shell 210 further includes a second guide plate 2104, which extends upward along the inner edge of the bottom end 2102 of the annular shell; and the outer diameter of the second guide plate 2104 is larger than the inner diameter of the first guide plate 2103. At this time, the top end 2101, bottom end 2102, outer side wall 2105, first guide plate 2103, and second guide plate 2104 of the annular shell 210 together form the gas chamber 212.

[0059] In one embodiment, such as Figure 4 As shown, the vertical distance h2 between the top end of the second guide plate 2104 and the bottom end 2102 of the annular shell 210 is less than the vertical distance h1 between the bottom end of the first guide plate 2103 and the bottom end 2102 of the annular shell. At this time, the opening 211 is formed between the first guide plate 2103 and the second guide plate 2104, so that the opening 211 is also an annular gap distributed along the circumference of the annular shell 210 and ensures that the opening 211 faces the base 120, thereby ensuring that when excess gas is drawn away, it can enter the gas chamber 212 without being cut through the opening 211.

[0060] In another embodiment, such as Figure 5As shown, the vertical distance h2' between the top end of the second guide plate 2104 and the bottom end 2102 of the annular shell 210 is greater than or equal to the vertical distance h1 between the bottom end of the first guide plate 2103 and the bottom end 2102 of the annular shell. In this case, the opening 211 is formed between the first guide plate 2103 and the bottom end 2102 of the annular shell, and a second gas channel 214 communicating with the opening 211 is formed between the first guide plate 2103 and the second guide plate 2104. In this situation, excess gas in the reaction chamber 110 can be extracted to the outside of the reaction chamber 110 through the second gas channel 214, the opening 211, the first gas channel 221, and the extraction port 213. Since the second gas channel 214 and the opening 211 are both continuously distributed along the circumference of the annular shell 210, that is, the second gas channel 214 and the opening 211 are both annular gaps distributed along the circumference of the annular shell 210, and the air inlet of the second gas channel 214 faces the top of the reaction chamber 110, it can also be ensured that when excess gas is drawn away, it can enter the gas chamber 212 without being cut through the second gas channel 214 and the opening 211.

[0061] Furthermore, a dust accumulation area can be formed between the second guide plate 2104 and the adjacent baffle 220, so that when excess gas in the reaction chamber 110 is extracted, reaction byproducts fall into the dust accumulation area, thereby preventing the base 120 from rolling up the fallen reaction byproducts when rotating at high speed, thus avoiding contamination of the substrate and affecting the substrate preparation yield.

[0062] Specifically, such as Figure 4 and Figure 5As shown, the vertical distance (h2, h2') between the top end of the second guide plate 2104 and the bottom end 2102 of the annular shell 210 is greater than or equal to 1 / 100 of the vertical distance h4 between the top end 2101 and the bottom end 2102 of the annular shell. This ensures that the dust accumulation area formed between the second guide plate 2104 and the adjacent baffle 220 has a good dust accumulation effect, so as to avoid the reaction byproducts falling into the dust accumulation area being rolled up; it also enables the second guide plate 2104 to have a good guiding effect, so that excess gas can flow into the opening 211 more smoothly. Meanwhile, the vertical distance (h2, h2') between the top end of the second guide plate 2104 and the bottom end 2102 of the annular shell is less than or equal to half of the vertical distance h4 between the top end 2101 and the bottom end 2102 of the annular shell. This not only makes the dust accumulation area formed between the second guide plate 2104 and the adjacent baffle 220 have a better dust accumulation effect, but also prevents the formation of a dead zone between the second guide plate 2104 and the base 120, so as to avoid the vortex in the dead zone affecting the flow field state of the airflow.

[0063] Please continue to refer to this. Figures 2 to 5 In some embodiments, when the number of baffles 220 is one, the horizontal distance d1 between the first guide plate 2103 and the baffle 220 (e.g., Figure 5 (As shown) is 1 / 20 to 1 / 2 of the horizontal distance d2 between the first guide plate 2103 and the outer wall 2105 of the annular shell. This ensures that the gap width between the first guide plate 2103 and the baffle 220 is not too small, so that excess gas can flow smoothly along the baffle 220 to the first gas channel 221, and thus flow to the outside of the reaction chamber 110. At the same time, this also ensures that the gap width between the first guide plate 2103 and the baffle 220 is not too large, so as to ensure the friction resistance of excess gas in the suction ring 200, thereby ensuring the uniformity of the suction of excess gas.

[0064] Optionally, when the number of baffles 220 is one, the vertical distance h3 between the bottom end of the first gas channel 221 and the bottom end 2102 of the annular housing 210 (e.g., ...) is... Figure 5 The vertical distance h4 between the top end 2101 and the bottom end 2102 of the annular shell is greater than or equal to 2 / 3 of the vertical distance h4, so as to ensure that the excess gas flowing from the opening 211 to the first gas channel 221 and from the first gas channel 221 to the extraction port 213 has a large friction resistance, thereby improving the uniformity of the extraction of excess gas.

[0065] In other embodiments, when there are multiple baffles 220, the horizontal distance between the first guide plate 2103 and the innermost baffle 220 (i.e., the baffle adjacent to the first guide plate 2103), and the horizontal distance between two adjacent baffles 220, are all 1 / 20 to 1 / 2 of the horizontal distance d2 between the first guide plate 2103 and the outer wall 2105 of the annular shell 210. This ensures that the gap width between the first guide plate 2103 and its adjacent baffle 220, and the gap width between two adjacent baffles 220, are not too small, so that excess gas can flow smoothly along the baffles 220 to the first gas channel 221. At the same time, this also ensures that the gap width between the first guide plate 2103 and its adjacent baffle 220, and the gap width between two adjacent baffles 220, are not too large, so as to ensure the friction resistance of excess gas in the suction ring 200, thereby ensuring the uniformity of suction of excess gas.

[0066] Furthermore, when there are multiple baffles 220, the first gas channels 221 on two adjacent baffles 220 are located at different horizontal heights, that is, the first gas channels 221 on two adjacent baffles 220 are staggered vertically to increase the friction resistance of excess gas between two adjacent baffles 220, thereby increasing the friction resistance of excess gas on the suction ring 200, and thus ensuring the uniformity of suction of excess gas.

[0067] Optionally, when there are multiple baffles 220, the vertical distance h3 between the bottom end of the first gas channel 221 on the innermost baffle 220 and the bottom end 2102 of the annular shell 210 is greater than or equal to 2 / 3 of the vertical distance h4 between the top end 2101 and the bottom end 2102 of the annular shell 210, so as to ensure the friction resistance of excess gas flowing from the opening 211 to the first gas channel 221; and the height difference of the first gas channel 221 on two adjacent baffles 220 is greater than or equal to 1 / 3 of the vertical distance h4 between the top end 2101 and the bottom end 2102 of the annular shell 210, so as to ensure the friction resistance of excess gas between two adjacent baffles 220, thereby ensuring the uniformity of the extraction of excess gas, and further ensuring the uniformity of the airflow distribution on the outer periphery of the base 120.

[0068] In some embodiments, the ventilation area of ​​the first gas channel 221 is adjustable. By controlling the size of the ventilation area of ​​the first gas channel 221, the local resistance when excess gas flows through the first gas channel 221 can be adjusted, thereby adjusting the friction resistance of excess gas within the suction ring 200 and further ensuring the uniformity of suction of excess gas. Optionally, the semiconductor processing device further includes: an adjustment plate (not shown in the figure); the adjustment plate is slidably connected to the baffle 220 in the vertical direction for adjusting the ventilation area of ​​the first gas channel 221. Preferably, the adjustment plate and the baffle 220 are connected by a sliding self-locking mechanism, and the ventilation area of ​​the first gas channel 221 is adjusted by sliding the adjustment plate up and down, but the present invention is not limited thereto.

[0069] like Figures 2 to 5 As shown, in one embodiment, the first gas channel 221 includes a plurality of through holes 2201 spaced circumferentially along the baffle 220, so that excess gas flows through the plurality of through holes 2201 to the extraction port 213. Optionally, the aperture of the plurality of through holes 2201 increases from near the extraction port 213 to away from the extraction port 213; that is, for the case where the gas flow rate is fast near the extraction port 213 and slow in the area away from the extraction port 213, the uniformity of extraction of excess gas is further ensured by controlling the aperture size of the plurality of through holes 2201.

[0070] like Figure 6 and Figure 7 As shown, in another embodiment, the first gas passage 221 includes an annular slit 2202 arranged circumferentially along the baffle 220, so that excess gas flows through the annular slit 2202 to the exhaust port 213. Optionally, the slit width w of the annular slit 2202 (e.g., ...) Figure 7 As shown, the gas flow rate increases from near the exhaust port 213 to away from the exhaust port 213; that is, for the case where the gas flow rate is fast in the area near the exhaust port 213 and slow in the area away from the exhaust port 213, the uniformity of exhaust of excess gas is further ensured by controlling the width w of the annular slit 2202.

[0071] In addition, such as Figure 2 and Figure 6As shown, the semiconductor processing apparatus further includes a baffle ring 130, located between the suction ring 200 and the base 120, and disposed around the base 120. A purge gas can be introduced between the baffle ring 130 and the base 120 to prevent excess gas from forming deposits on the outer wall of the base 120. Furthermore, the baffle ring 130 has an annular inclined surface 1301 that slopes outwards from top to bottom to guide excess gas flow towards the opening 211, thereby ensuring smooth flow of excess gas.

[0072] Alternatively, in some embodiments, such as Figure 2 and Figure 6 As shown, the bottom end of the annular inclined surface 1301 is not lower than the top end of the second guide plate 2104. This makes it easier for excess gas to flow to the opening 211 and enter the suction ring 200 after being guided by the annular inclined surface 1301. This effectively suppresses the formation of vortices between the baffle ring 130 and the second guide plate 2104, thereby avoiding the vortex from affecting the flow field state of the airflow. However, the present invention is not limited thereto.

[0073] Please continue to refer to this. Figure 2 and Figure 6 The semiconductor processing apparatus further includes a liner 150, disposed around the spray head 140; the liner 150 is used to define a process area for processing the substrate to improve the utilization rate of process gases. Specifically, the liner 150 can reciprocate between a process position and a wafer pick-up position, optionally with the process position located above the wafer pick-up position. When the liner 150 is in the process position, the substrate can be processed within the defined process area. When the liner 150 is in the wafer pick-up position, it can perform operations such as transferring the substrate to be processed into the reaction chamber 110 and transferring the processed substrate out of the reaction chamber 110.

[0074] It is understandable that, such as Figure 2 , Figures 4 to 7 As shown, the outer diameter of the inner liner 150 is smaller than the inner diameter of the first guide plate 2103 to avoid interference from the first guide plate 2103 on the vertical movement of the inner liner 150. Furthermore, when the inner liner 150 is in the process position, the bottom end of the inner liner 150 is lower than the top end 2101 of the annular shell 210. This increases the resistance of the process gas entering the cavity 160 formed by the inner liner 150, the top end 2101 of the annular shell 210, and the cavity wall of the reaction chamber 110, thereby improving the processing efficiency of the substrate. Simultaneously, this also prevents eddies from forming inside the cavity 160, which could cause reaction byproducts to be drawn onto the substrate, thus improving the substrate preparation yield.

[0075] To more clearly illustrate the beneficial effects of the suction ring described in this invention, a suction simulation experiment was conducted, and the simulation results are as follows: Figures 8 to 11 As shown.

[0076] Figure 8 This is a diagram showing the gas flow velocity at the opening when using the suction ring provided in this invention for evacuation. Figure 9 This is a diagram showing the gas velocity at discrete orifices during evacuation using a evacuation ring in existing technology. From... Figure 8 It can be seen that when the excess gas in the reaction chamber 110 is extracted to the outside of the reaction chamber 110 using the extraction ring 200 provided in this invention, the maximum difference Δ1 in gas flow velocity at the openings 211 distributed circumferentially along the extraction ring 200 is only 0.01 m / s; while Figure 9 The maximum difference in gas velocity Δ2 at the discrete holes distributed circumferentially along the extraction ring reaches as high as 3 m / s. From Figure 8 and Figure 9 In comparison, the air extraction ring 200 provided in this invention greatly ensures the uniformity of airflow distribution on the outer periphery of the base 120, and can effectively reduce the risk of changes in the flow field state caused by the increase of the rotational speed of the base 120.

[0077] Figure 10 This is a comparison diagram showing the gas flow velocity around the substrate when using the extraction ring provided in this invention and the extraction ring in the prior art for evacuation. When the extraction ring 200 provided in this invention extracts excess gas from the reaction chamber 110, the gas flow velocity around the substrate generally follows curve A. When the extraction ring in the prior art extracts excess gas from the reaction chamber, the gas flow velocity around the substrate generally follows curve B. Figure 10 As can be seen, curve A is roughly a straight line, which is straighter than curve B. This indicates that when the excess gas in the reaction chamber 110 is extracted to the outside of the reaction chamber 110 using the extraction ring 200 provided in this invention, the airflow distribution around the substrate is more uniform. The main reason is that the extraction ring 200 provided in this invention greatly ensures the uniformity of the airflow distribution on the outer periphery of the base 120, thereby ensuring the uniformity of the airflow distribution on the outer periphery of the substrate.

[0078] Figure 11 This is a schematic diagram showing the gas flow direction within the reaction chamber during evacuation using the evacuation ring provided in this invention; from Figure 11As can be seen, when the excess gas in the reaction chamber 110 is extracted to the outside of the reaction chamber 110 using the extraction ring 200 provided in this invention, the excess gas enters the gas chamber 212 without being divided through the continuously distributed openings 211, so that the airflow formed by the excess gas remains intact in the reaction chamber 110 (i.e., before entering the extraction ring 200). Furthermore, from... Figure 11 It can also be seen that eddies exist only in a portion of region C within the suction ring 200. However, the eddies in region C do not have an adverse effect on the substrate, that is, when the eddies in region C pick up the reaction byproducts, the reaction byproducts do not fall onto the substrate.

[0079] In summary, this invention provides a semiconductor processing apparatus in which a suction ring surrounding a base includes an annular housing and at least one baffle. The annular housing has a gas chamber with an opening facing the base and a suction port that connects the gas chamber to the outside of the reaction chamber. The openings are continuously distributed circumferentially around the annular housing, forming annular slits. This ensures that excess gas enters the gas chamber uninterruptedly through the continuously distributed openings during the extraction of excess gas from the reaction chamber. This maintains the integrity of the gas flow within the reaction chamber (before entering the suction ring), avoiding the separation of the gas flow within the reaction chamber as seen in existing technologies. This significantly ensures the uniformity of the gas flow distribution on the outer periphery of the base, reducing the risk of changes in the flow field due to increased base rotation speed. The baffle is disposed within the gas chamber and has a first gas channel. After the excess gas enters the gas chamber uninterruptedly through the opening, it flows along the baffle to the first gas channel, then to the suction port and is extracted to the outside of the reaction chamber. In this invention, the baffle can effectively increase the friction resistance of excess gas flowing from the opening through the first gas channel to the extraction port, thereby ensuring the uniformity of the extraction of excess gas and further ensuring the uniformity of the airflow distribution on the outer periphery of the base.

[0080] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A semiconductor processing apparatus, characterized in that, include: reaction chamber; A rotatable base is located at the bottom of the reaction chamber to support the substrate; A spray head, located at the top of the reaction chamber, is used to introduce process gas into the reaction chamber to process the substrate. as well as A vacuum ring, arranged around the base, is used to extract excess gas during the process to the outside of the reaction chamber; The suction ring includes: An annular shell is fixed inside the reaction chamber; the annular shell has a gas chamber with an opening facing the base, and an exhaust port that connects the gas chamber to the outside of the reaction chamber; and the opening is continuously distributed along the circumference of the annular shell. At least one baffle is located in the gas chamber and is arranged circumferentially along the annular shell; the baffle is arranged inside the exhaust port and the baffle is provided with a first gas channel so that excess gas flows out of the reaction chamber through the opening, the first gas channel and the exhaust port.

2. The semiconductor processing apparatus as described in claim 1, characterized in that, The annular housing includes a top end and a bottom end disposed opposite to each other, and a first guide plate extending downward along the inner edge of the top end of the annular housing, wherein the opening is formed between the first guide plate and the bottom end of the annular housing.

3. The semiconductor processing apparatus as described in claim 2, characterized in that, The annular shell further includes a second guide plate extending upward along the inner edge of the bottom end of the annular shell; and the outer diameter of the second guide plate is larger than the inner diameter of the first guide plate.

4. The semiconductor processing apparatus as described in claim 3, characterized in that, The vertical distance between the top end of the second guide plate and the bottom end of the annular shell is less than the vertical distance between the bottom end of the first guide plate and the bottom end of the annular shell, and the opening is formed between the first guide plate and the second guide plate.

5. The semiconductor processing apparatus as described in claim 3, characterized in that, The vertical distance between the top end of the second guide plate and the bottom end of the annular shell is greater than or equal to the vertical distance between the bottom end of the first guide plate and the bottom end of the annular shell, and a second gas channel communicating with the opening is formed between the first guide plate and the second guide plate.

6. The semiconductor processing apparatus according to any one of claims 2 to 5, characterized in that, The vertical distance between the bottom end of the first guide plate and the bottom end of the annular shell is less than or equal to 1 / 3 of the vertical distance between the top end and the bottom end of the annular shell.

7. The semiconductor processing apparatus according to any one of claims 3 to 5, characterized in that, The vertical distance between the top of the second guide plate and the bottom of the annular shell is 1 / 100 to 1 / 2 of the vertical distance between the top and bottom of the annular shell.

8. The semiconductor processing apparatus as claimed in claim 2, characterized in that, When there is one baffle, the horizontal distance between the first guide plate and the baffle is 1 / 20 to 1 / 2 of the horizontal distance between the first guide plate and the outer wall of the annular shell.

9. The semiconductor processing apparatus as described in claim 2, characterized in that, When there are multiple baffles, the horizontal distance between the first guide plate and the innermost baffle, as well as the horizontal distance between two adjacent baffles, is 1 / 20 to 1 / 2 of the horizontal distance between the first guide plate and the outer wall of the annular shell.

10. The semiconductor processing apparatus as claimed in claim 1, characterized in that, When there are multiple baffles, the first gas passages on two adjacent baffles are located at different horizontal heights.

11. The semiconductor processing apparatus as claimed in claim 2, characterized in that, The vertical distance between the bottom end of the first gas channel and the bottom end of the annular shell is greater than or equal to 2 / 3 of the vertical distance between the top end and the bottom end of the annular shell.

12. The semiconductor processing apparatus as claimed in claim 1, characterized in that, The first gas passage includes a plurality of through holes spaced apart circumferentially along the baffle.

13. The semiconductor processing apparatus as claimed in claim 12, characterized in that, The diameter of the plurality of through holes increases from the direction closest to the air extraction port to the direction furthest from the air extraction port.

14. The semiconductor processing apparatus as claimed in claim 1, characterized in that, The first gas passage includes an annular slit arranged circumferentially along the baffle.

15. The semiconductor processing apparatus as claimed in claim 14, characterized in that, The width of the annular slit increases from near the air extraction port to away from the air extraction port.

16. The semiconductor processing apparatus as claimed in claim 1, characterized in that, The ventilation area of ​​the first gas channel is adjustable.

17. The semiconductor processing apparatus as claimed in claim 16, characterized in that, Also includes: Adjustment plate; the adjustment plate is slidably connected to the baffle in the vertical direction and is used to adjust the ventilation area of ​​the first gas channel.

18. The semiconductor processing apparatus as claimed in claim 3, characterized in that, Also includes: A baffle ring is located between the suction ring and the base, and is disposed around the base; and the baffle ring has an annular inclined surface that slopes outward from top to bottom to guide excess gas flow toward the opening.

19. The semiconductor processing apparatus as claimed in claim 18, characterized in that, The bottom end of the annular inclined surface is not lower than the top end of the second guide plate.

20. The semiconductor processing apparatus as claimed in claim 2, characterized in that, Also includes: A liner is provided around the spray head; the liner can reciprocate between the process position and the sheet picking position, and the outer diameter of the liner is smaller than the inner diameter of the first guide plate.

21. The semiconductor processing apparatus as claimed in claim 20, characterized in that, When the liner is in the process position, the bottom end of the liner is lower than the top end of the annular shell.

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