Wafer eccentricity detection method, device and electronic equipment

Abstract

This application provides a method, apparatus, and electronic device for detecting wafer eccentricity, relating to the field of semiconductor manufacturing technology. The method includes: during wafer orientation, acquiring the edge light intensity value of the wafer collected by the original orientation sensor of the wafer transport system when the wafer rotates 360 degrees at an orientation station, generating a curve showing the change of edge light intensity value with the rotation angle; determining the wafer eccentricity detection result based on the curve; when the eccentricity detection result indicates wafer eccentricity, determining the rotation angle corresponding to the maximum or minimum edge light intensity value in the curve as the wafer eccentricity angle; determining the actual edge light intensity offset of the wafer based on the maximum or minimum edge light intensity value in the curve and the interval to which the wafer edge notch belongs in the curve; and determining the wafer eccentricity distance based on the actual edge light intensity offset and a pre-calibrated scaling factor. This method reduces costs while improving the accuracy of the eccentricity angle and eccentricity distance.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a method, apparatus and electronic device for detecting wafer eccentricity. Background Technology

[0002] In the semiconductor manufacturing industry, robotic arms are typically used to transfer wafers between chambers or workstations. In wafer transfer systems, wafer misalignment due to vibrations of the robotic arm or motor shaft is a common phenomenon. To improve the efficiency and accuracy of wafer handling, it is necessary to design and implement an Active Wafer Centering (AWC) function to detect wafer eccentricity and, in conjunction with the robotic arm, correct the wafer's position. Wafer eccentricity refers to the offset of the wafer's center relative to the theoretical center of its current workstation.

[0003] In existing technologies, when detecting the off-center position of a wafer, two calibration sensors are installed on a specific station path where AWC calibration is required. During wafer transport, the off-center position information is calculated based on the values ​​fed back from the two calibration sensors and internally calibrated data. The robot's trajectory is then fine-tuned to achieve the correction. However, this method requires two dedicated calibration sensors and wiring harnesses, resulting in high costs.

[0004] In existing technologies, to reduce costs, another approach has been proposed: using existing photosensitive sensors on the orientation station to detect the offset between the wafer's center and the orientation stage center by analyzing the light intensity change curve during wafer rotation. However, this approach calculates the offset solely based on the relationship between the rotation angle and the photosensitive value, leading to significant errors in the calculated offset and affecting the accuracy of subsequent robot position compensation. Summary of the Invention

[0005] This application provides a method, apparatus, and electronic device for detecting wafer eccentricity, which improves the accuracy of the determined wafer eccentricity angle and eccentricity distance while reducing costs.

[0006] In a first aspect, embodiments of this application provide a method for detecting wafer eccentricity, the method comprising: During wafer orientation, the edge light intensity value of the wafer is acquired by the original orientation sensor of the wafer transport system when the wafer rotates 360 degrees at the orientation station, and a curve of the edge light intensity value changing with the rotation angle is generated. Based on the change curve, the eccentricity detection result of the wafer is determined; When the eccentricity detection result indicates that the wafer is eccentric, the rotation angle corresponding to the maximum and minimum values ​​of the edge light intensity in the variation curve is determined as the eccentricity angle of the wafer. Based on the maximum and minimum values ​​of the edge light intensity in the variation curve and the interval to which the wafer edge notch belongs in the variation curve, the actual edge light intensity offset of the wafer is determined. Based on the actual edge light intensity offset and the pre-calibrated scaling factor, the eccentricity distance of the wafer is determined. The scaling factor is the conversion factor between the offset distance of the wafer and the edge light intensity offset.

[0007] In an optional embodiment, the method further includes: The maximum offset distance and edge light intensity value of the original orientation sensor when the photosensitive area is not blocked by the wafer are used as the first calibration point; The offset distance and edge light intensity value when the wafer is unbiased and the edge of the wafer is at the center of the photosensitive area are used as the second calibration point; The scaling factor is determined based on the offset distance between the first and second calibration points and the edge light intensity value.

[0008] In one optional embodiment, determining the wafer eccentricity detection result based on the variation curve includes: If the change curve shows a sine or cosine distribution pattern, then the wafer eccentricity detection result is determined to be wafer eccentricity. If the curve is a basically flat horizontal line, then the wafer eccentricity detection result is determined to be that the wafer has not been eccentric.

[0009] In one optional embodiment, the scaling factor includes a first scaling factor and a second scaling factor; The first proportionality coefficient is used to characterize the edge light intensity shift corresponding to each unit offset distance of the wafer; The second proportionality coefficient is used to characterize the offset distance corresponding to each unit of edge light intensity offset generated by the wafer.

[0010] In one optional embodiment, the wafer offset distance is determined based on the actual edge light intensity offset and a pre-calibrated scaling factor, including: The wafer's eccentricity is obtained by calculating the ratio of the actual edge light intensity offset to the first proportional coefficient; or by calculating the product of the actual edge light intensity offset and the second proportional coefficient.

[0011] In one optional embodiment, the actual edge light intensity offset of the wafer is determined based on the maximum and minimum values ​​of the edge light intensity values ​​in the variation curve and the interval to which the wafer edge notch belongs in the variation curve, including: If the distance between the interval of the wafer edge notch and one of the extreme values ​​is less than a preset first distance threshold, then the actual edge light intensity offset of the wafer is determined based on the other extreme value and the standard edge light intensity value corresponding to the wafer. The extreme values ​​include the maximum value and the minimum value, and the standard edge light intensity value is the edge light intensity value corresponding to the wafer when no eccentricity is generated. If the distance between the interval of the wafer edge notch and two of the maximum and minimum values ​​is greater than or equal to the first distance threshold, then calculate half of the difference between the maximum and minimum values ​​to obtain the actual edge light intensity offset of the wafer.

[0012] In an optional embodiment, the method further includes: Based on the site location information, eccentricity angle and eccentricity distance of the orientation site in the robot coordinate system, the center position information of the wafer in the robot coordinate system is determined. Based on the center position information, the robot arm is controlled to pick up the wafer from the directional station.

[0013] In an optional embodiment, the method further includes: When the eccentricity distance exceeds the preset second distance threshold, an error message is generated and sent to the target object.

[0014] Secondly, embodiments of this application also provide a wafer eccentricity detection device, the device comprising: The data acquisition module is used to acquire the edge light intensity value of the wafer when the wafer rotates 360 degrees at the orientation station during the wafer orientation process, which is collected by the original orientation sensor of the wafer transmission system, and generate a curve of the edge light intensity value changing with the rotation angle. The first determining module is used to determine the wafer eccentricity detection result based on the change curve; The second determining module is used to determine the rotation angle corresponding to the maximum and minimum values ​​of edge light intensity in the variation curve as the eccentricity angle of the wafer when the eccentricity detection result indicates that the wafer has eccentricity. Based on the maximum and minimum values ​​of edge light intensity in the variation curve and the interval to which the wafer edge notch belongs in the variation curve, the module determines the actual edge light intensity offset of the wafer. Based on the actual edge light intensity offset and a pre-calibrated scaling factor, the module determines the eccentricity distance of the wafer, where the scaling factor is the conversion factor between the wafer offset distance and the edge light intensity offset.

[0015] In an optional embodiment, the device further includes a calibration module, which is used for: The maximum offset distance and edge light intensity value of the original orientation sensor when the photosensitive area is not blocked by the wafer are used as the first calibration point; The offset distance and edge light intensity value when the wafer is unbiased and the edge of the wafer is at the center of the photosensitive area are used as the second calibration point; The scaling factor is determined based on the offset distance between the first and second calibration points and the edge light intensity value.

[0016] In an optional embodiment, when determining the wafer eccentricity detection result based on the change curve, the first determining module is further configured to: If the change curve shows a sine or cosine distribution pattern, then the wafer eccentricity detection result is determined to be wafer eccentricity. If the curve is a basically flat horizontal line, then the wafer eccentricity detection result is determined to be that the wafer has not been eccentric.

[0017] In one optional embodiment, the scaling factor includes a first scaling factor and a second scaling factor; The first proportionality coefficient is used to characterize the edge light intensity shift corresponding to each unit offset distance of the wafer; The second proportionality coefficient is used to characterize the offset distance corresponding to each unit of edge light intensity offset generated by the wafer.

[0018] In an optional embodiment, when determining the wafer's eccentricity distance based on the actual edge light intensity offset and a pre-calibrated scaling factor, the second determining module is further configured to: The wafer's eccentricity is obtained by calculating the ratio of the actual edge light intensity offset to the first proportional coefficient; or by calculating the product of the actual edge light intensity offset and the second proportional coefficient.

[0019] In an optional embodiment, when determining the actual edge light intensity offset of the wafer based on the maximum and minimum values ​​of the edge light intensity values ​​in the variation curve and the interval to which the wafer edge notch belongs in the variation curve, the second determining module is further configured to: If the distance between the interval of the wafer edge notch and one of the extreme values ​​is less than a preset first distance threshold, then the actual edge light intensity offset of the wafer is determined based on the other extreme value and the standard edge light intensity value corresponding to the wafer. The extreme values ​​include the maximum value and the minimum value, and the standard edge light intensity value is the edge light intensity value corresponding to the wafer when no eccentricity is generated. If the distance between the interval of the wafer edge notch and two of the maximum and minimum values ​​is greater than or equal to the first distance threshold, then calculate half of the difference between the maximum and minimum values ​​to obtain the actual edge light intensity offset of the wafer.

[0020] In an optional embodiment, the device further includes a correction module, which is used for: Based on the site location information, eccentricity angle and eccentricity distance of the orientation site in the robot coordinate system, the center position information of the wafer in the robot coordinate system is determined. Based on the center position information, the robot arm is controlled to pick up the wafer from the directional station.

[0021] In an optional embodiment, the correction module is further configured to: When the eccentricity distance exceeds the preset second distance threshold, an error message is generated and sent to the target object.

[0022] Thirdly, embodiments of this application also provide an electronic device, including: Processor; and Stored program memory, The program includes instructions that, when executed by the processor, cause the processor to perform the wafer eccentricity detection method as described in the first aspect.

[0023] Fourthly, embodiments of this application also provide a non-transitory computer-readable storage medium storing computer instructions, wherein the computer instructions are used to cause a computer to perform the wafer eccentricity detection method as described in the first aspect.

[0024] Fifthly, this application provides a computer program product that, when invoked by a computer, causes the computer to execute the wafer eccentricity detection method steps as described in the first aspect.

[0025] The beneficial effects of this application are as follows: In the wafer eccentricity detection method provided in this application embodiment, during the wafer orientation process, the edge light intensity value of the wafer is acquired by the original orientation sensor of the wafer transport system when the wafer rotates 360 degrees at the orientation station, and a curve of the edge light intensity value changing with the rotation angle is generated; then, based on the curve, the wafer eccentricity detection result is determined; thus, when the eccentricity detection result indicates that the wafer is eccentric, the rotation angle corresponding to the maximum and minimum values ​​of the edge light intensity value in the curve is determined as the eccentricity angle of the wafer, and based on the maximum and minimum values ​​of the edge light intensity value in the curve and the interval to which the wafer edge notch belongs in the curve, the actual edge light intensity offset of the wafer is determined, and based on the actual edge light intensity offset and a pre-calibrated scaling factor, the eccentricity distance of the wafer is determined, wherein the scaling factor is a conversion factor between the wafer offset distance and the edge light intensity offset. In this way, by reusing the existing orientation sensor of the wafer transfer system to collect edge light intensity values, and based on the curve of the edge light intensity value changing with the rotation angle, it is possible to determine whether the wafer is eccentric, the eccentric angle, and the eccentric distance. This eliminates the need for an additional dedicated calibration sensor for eccentricity detection, significantly reducing hardware costs and wiring complexity. Simultaneously, because the wafer edge has a notch for crystal orientation identification, this notch causes abrupt changes in local edge light intensity values, severely interfering with the curve. Therefore, based on the maximum and minimum edge light intensity values ​​in the curve and the interval to which the wafer edge notch belongs, the actual edge light intensity offset corresponding to the wafer is determined. Then, based on the actual edge light intensity offset and a pre-calibrated scaling factor, the wafer eccentricity distance is determined. This effectively overcomes the interference from the wafer edge notch, significantly improving the stability of eccentricity distance determination under complex operating conditions and enhancing anti-interference capabilities. Furthermore, the final determination of the eccentricity distance using the scaling factor ensures accuracy while significantly reducing the computational burden, shortening processing time, and improving computational efficiency.

[0026] Furthermore, other features and advantages of this application will be set forth in the following description and will be apparent in part from the description, or may be learned by practicing the application. The objectives and other advantages of this application may be realized and obtained by means of the structures particularly pointed out in the written description and drawings. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described herein are used to provide a further understanding of this application, constitute a part of this application, and do not constitute an improper limitation of this application. In the accompanying drawings: Figure 1 This is a schematic diagram of a wafer being transferred on a robotic arm, as provided in an embodiment of this application.

[0028] Figure 2This is a schematic diagram illustrating an embodiment of the present application for using an additional sensor to detect eccentricity.

[0029] Figure 3 This is a schematic diagram of a wafer orientation process provided in an embodiment of this application.

[0030] Figure 4 This is a schematic diagram illustrating the implementation process of a wafer eccentricity detection method provided in this application embodiment.

[0031] Figure 5 This is a first schematic diagram of a variation curve provided in an embodiment of this application.

[0032] Figure 6 This is a second schematic diagram of a variation curve provided in an embodiment of this application.

[0033] Figure 7 This is a schematic diagram of the relationship curve between offset distance and edge light intensity value provided in an embodiment of this application.

[0034] Figure 8 This is a logical schematic diagram of a wafer eccentricity detection method provided in an embodiment of this application.

[0035] Figure 9 This is a schematic diagram of a wafer eccentricity detection device provided in an embodiment of this application.

[0036] Figure 10 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Detailed Implementation

[0037] Embodiments of this application will now be described in more detail with reference to the accompanying drawings. While some embodiments of this application are shown in the drawings, it should be understood that this application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of this application. It should be understood that the drawings and embodiments of this application are for illustrative purposes only and are not intended to limit the scope of protection of this application.

[0038] It should be understood that the steps described in the method embodiments of this application may be performed in different orders and / or in parallel. Furthermore, the method embodiments may include additional steps and / or omit the steps shown. The scope of this application is not limited in this respect.

[0039] The term "comprising" and its variations as used herein are open-ended, meaning "including but not limited to". The term "based on" means "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". Definitions of other terms will be given in the following description. It should be noted that the concepts of "first", "second", etc., mentioned in this application are used only to distinguish different devices, modules, or units, and are not intended to limit the order of functions performed by these devices, modules, or units or their interdependencies.

[0040] It should be noted that the terms "a" and "a plurality of" used in this application are illustrative rather than restrictive, and those skilled in the art should understand that, unless otherwise expressly indicated in the context, they should be understood as "one or more".

[0041] The names of the messages or information exchanged between multiple devices in the embodiments of this application are for illustrative purposes only and are not intended to limit the scope of these messages or information.

[0042] The design concept of the embodiments of this application is briefly introduced below: In the semiconductor manufacturing industry, robotic arms are typically used to transfer wafers between chambers or workstations. (See [link to relevant documentation]). Figure 1 As shown. In wafer transport systems, wafer misalignment due to vibrations of robotic arms or motor shafts is a common phenomenon. To improve the efficiency and accuracy of wafer pick-and-place, it is necessary to design and use AWC (AWC) functionality to detect wafer misalignment, while simultaneously coordinating with the robotic arm to correct the wafer position. Wafer eccentricity refers to the offset of the wafer's center relative to the theoretical center of its current location.

[0043] See Figure 2 The diagram illustrates an embodiment of this application that uses additional sensors for eccentricity detection. In the prior art, two calibration sensors are installed along the path of a station requiring AWC calibration. During wafer transport, the eccentricity position information of the wafer is calculated based on the values ​​fed back from the two calibration sensors and the internally calibrated data. The robot's trajectory is then fine-tuned to achieve eccentricity correction. However, this method requires two dedicated calibration sensors and wiring harnesses, resulting in high costs. Furthermore, the eccentricity position information of the wafer needs to be calculated during its movement to the designated station and corrected at the station's endpoint, splitting the continuous action into two actions, affecting the final transmission speed and resulting in low transmission efficiency. Additionally, the two dedicated calibration sensors themselves require complex setup, making the calibration process cumbersome.

[0044] In existing technologies, to reduce costs, another approach has been proposed: using existing photosensitive sensors on the orientation station to detect the offset between the wafer's center and the orientation stage center by analyzing the light intensity change curve during wafer rotation. However, this approach calculates the offset solely based on the relationship between the rotation angle and the photosensitive value, leading to significant errors in the calculated offset and affecting the accuracy of subsequent robot position compensation.

[0045] Currently, wafer transport systems typically include a station (orientation station) for determining the orientation of wafer edge notches (e.g., positioning notches). At this station, the wafer rotates 360 degrees, and the orientation sensor determines the position of the edge notch by analyzing changes in edge light intensity. (See [link to relevant documentation]). Figure 3 The diagram shown is a schematic representation of the wafer orientation process provided in an embodiment of this application. Figure 3 Part (a) in the diagram is a schematic diagram of the mechanical layout for the orientation process. Figure 3 Part (b) is a schematic diagram of a wafer with an edge notch.

[0046] Therefore, based on the orientation sensor, a novel wafer eccentricity detection method can be provided. This method reuses the original orientation sensor to detect and correct wafer eccentricity without requiring additional calibration sensors, thus saving costs. It can automatically complete wafer eccentricity detection and correction without affecting normal transmission operations, simplifying the complexity of the AWC function in the transmission system, improving transmission efficiency, effectively overcoming wafer edge notch interference, significantly improving the stability of eccentricity distance determination under complex working conditions, and possessing anti-interference capabilities. In one optional implementation, this application proposes a wafer eccentricity detection method, which may include: during wafer orientation, acquiring the edge light intensity value of the wafer collected by the original orientation sensor of the wafer transport system when the wafer rotates 360 degrees at the orientation station, and generating a curve showing the change of the edge light intensity value with the rotation angle; then, based on the curve, determining the wafer eccentricity detection result; and when the eccentricity detection result indicates that the wafer is eccentric, determining the rotation angle corresponding to the maximum or minimum value of the edge light intensity value in the curve as the wafer eccentricity angle, and determining the actual edge light intensity offset of the wafer based on the maximum or minimum value of the edge light intensity value in the curve and the interval to which the wafer edge notch belongs in the curve, and determining the wafer eccentricity distance based on the actual edge light intensity offset and a pre-calibrated scaling factor, wherein the scaling factor is a conversion factor between the wafer offset distance and the edge light intensity offset.

[0047] Using the above method, edge light intensity values ​​are collected by reusing the existing orientation sensors in the wafer transfer system. Based on the curve of edge light intensity values ​​changing with rotation angle, the presence, angle, and distance of wafer eccentricity are determined. This eliminates the need for additional dedicated calibration sensors for eccentricity detection, significantly reducing hardware costs and wiring complexity, and simplifying the wafer eccentricity detection process. Furthermore, the computational logic is simple, computationally intensive, and highly real-time, enabling simultaneous eccentricity detection during wafer orientation without affecting wafer transfer efficiency. Simultaneously, the presence of notches at the wafer edge for crystal orientation identification can cause local edge eccentricity issues. The abrupt change in edge light intensity severely interferes with the variation curve. Therefore, based on the maximum and minimum values ​​of edge light intensity in the variation curve and the interval to which the wafer edge notch belongs, the actual edge light intensity offset of the wafer is determined. Then, based on the actual edge light intensity offset and a pre-calibrated scaling factor, the wafer's eccentricity is determined. This effectively overcomes the interference from the wafer edge notch, significantly improves the stability of eccentricity determination under complex working conditions, and enhances anti-interference capability. Furthermore, the scaling factor is ultimately used to determine the eccentricity, ensuring accuracy while significantly reducing the computational burden, shortening processing time, and improving computational efficiency.

[0048] In particular, the preferred embodiments of this application will be described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are for illustration and explanation only and are not intended to limit this application. Furthermore, the embodiments of this application and the features in the embodiments can be combined with each other without conflict.

[0049] See Figure 4 The diagram shown illustrates the implementation flow of a wafer eccentricity detection method provided in this application embodiment. Taking a controller as an example, the specific implementation flow of this method is as follows: S401: During the wafer orientation process, the edge light intensity value of the wafer is acquired by the original orientation sensor of the wafer transport system when the wafer rotates 360 degrees at the orientation station, and a curve of the edge light intensity value changing with the rotation angle is generated.

[0050] The wafer orientation process refers to the process of determining the direction of the wafer edge notch at the orientation site. In this embodiment, the edge notch can be a wafer edge flat or a wafer edge positioning groove (notch). The wafer size can be 6 inches, 8 inches, or 12 inches, etc. In this embodiment, there are no restrictions on the wafer size, material, and edge notch type.

[0051] In this embodiment, the controller sends an orientation command to the orientation station. After receiving the orientation command, the orientation station's orientation sensor collects the edge light intensity value corresponding to each rotation angle as the wafer rotates 360 degrees at the orientation station. The orientation sensor then sends the collected edge light intensity value to the controller, which then obtains the edge light intensity value corresponding to each rotation angle. Based on the obtained edge light intensity value corresponding to each rotation angle, the controller generates a curve showing the change of edge light intensity value with the rotation angle. The horizontal axis of the curve represents the rotation angle, and the vertical axis represents the edge light intensity value.

[0052] S402: Determine the wafer eccentricity detection result based on the change curve.

[0053] In this embodiment, the wafer eccentricity detection result is determined based on the waveform characteristics of the change curve. Specifically, this includes the following two cases: Scenario 1: If the change curve shows a sine or cosine distribution pattern, then the wafer eccentricity detection result is determined to be wafer eccentricity.

[0054] In this embodiment of the application, if the change curve is similar to a sine curve or a cosine curve, then the wafer eccentricity detection result is determined to be wafer eccentricity.

[0055] For example, see Figure 5 As shown, this is a first schematic diagram of the change curve provided in the embodiment of this application. The change curve in the figure shows a sine or cosine distribution pattern. The eccentricity detection result of this wafer is determined to be that the wafer has eccentricity. The peak segment is the interval to which the wafer edge notch belongs. The direction of the wafer edge notch can be determined by the rotation angle corresponding to the peak segment.

[0056] Scenario 2: If the change curve is a basically flat horizontal straight line, then the wafer eccentricity detection result is determined to be that the wafer has not been eccentric.

[0057] In this embodiment of the application, if the change curve is similar to a basically straight horizontal line, then the wafer eccentricity detection result is determined to be that the wafer has not been eccentric, that is, the wafer is not eccentric.

[0058] For example, see Figure 6 As shown, this is a second schematic diagram of the change curve provided in the embodiment of this application. The change curve in the figure is similar to a basically straight horizontal line. It is determined that the eccentricity detection result of this wafer is that the wafer has not been eccentric. The peak segment is the interval to which the wafer edge notch belongs. The direction of the wafer edge notch can be determined by the rotation angle corresponding to the peak segment.

[0059] In this way, the wafer misalignment can be directly determined by the waveform characteristics of the changing curve (e.g., sine, cosine, or basically flat). The judgment is intuitive, robust, and unaffected by slight noise interference. At the same time, it does not require complex algorithms, has low computational overhead, and is fast in judgment. It can quickly determine whether the wafer is misaligned during wafer orientation, meeting the high-speed transmission requirements of semiconductor equipment.

[0060] S403: When the eccentricity detection result indicates that the wafer is eccentric, the rotation angle corresponding to the maximum and minimum values ​​of the edge light intensity in the variation curve is determined as the eccentricity angle of the wafer. Based on the maximum and minimum values ​​of the edge light intensity in the variation curve and the interval to which the wafer edge notch belongs in the variation curve, the actual edge light intensity offset of the wafer is determined. Based on the actual edge light intensity offset and the pre-calibrated scaling factor, the eccentricity distance of the wafer is determined.

[0061] The scaling factor is a conversion factor between the wafer offset distance and the edge light intensity offset. The scaling factor is used to reflect the relationship between the wafer offset distance and the edge light intensity offset. The scaling factor includes a first scaling factor and a second scaling factor. The first scaling factor is used to characterize the edge light intensity offset corresponding to each unit offset distance generated by the wafer. The second scaling factor is used to characterize the offset distance corresponding to each unit edge light intensity offset generated by the wafer. The offset distance refers to the distance that the center of the wafer is offset from the theoretical center point of the orientation station.

[0062] In this embodiment, when the eccentricity detection result indicates that the wafer is eccentric, the eccentricity angle and eccentricity distance of the wafer are determined based on the change curve. When the eccentricity detection result indicates that the wafer is not eccentric, the robot arm is controlled to directly use the standard position coordinates of the orientation station for grasping. Here, the eccentricity angle refers to the direction in which the center of the wafer deviates from the theoretical center point of the orientation station, and the eccentricity distance refers to the straight-line distance on the horizontal plane between the center of the wafer and the theoretical center point of the orientation station.

[0063] In this embodiment, the eccentricity angle and eccentricity distance of the wafer are determined based on the variation curve and the interval to which the wafer edge notch belongs.

[0064] Optionally, in this embodiment of the application, when the rotation angle corresponding to the maximum or minimum value of the edge light intensity value in the variation curve is determined as the eccentricity angle of the wafer, the rotation angle corresponding to the maximum or minimum value of the edge light intensity value in the variation curve is determined as the eccentricity angle of the wafer.

[0065] For example, such as Figure 5 As shown, the rotation angle corresponding to the maximum value of the edge light intensity in the variation curve (point A) is determined as the eccentricity angle of the wafer, or the rotation angle corresponding to the minimum value of the edge light intensity in the variation curve (point B) is determined as the eccentricity angle of the wafer.

[0066] Furthermore, it is worth noting that in this embodiment, when the distance between the interval of the wafer edge notch in the variation curve (i.e., the rotation angle interval corresponding to the peak segment) and one of the extreme values ​​is less than a preset first distance threshold, that is, when the rotation angle interval corresponding to the peak segment is close to one of the extreme values ​​or the interval of the wafer edge notch contains one of the extreme values, then the rotation angle corresponding to the other extreme value is determined as the wafer's eccentricity angle. For example, when the distance between an interval of a wafer edge notch and the maximum value of the edge light intensity value in the variation curve is less than the preset first distance threshold, the rotation angle corresponding to the minimum value of the edge light intensity value in the variation curve is determined as the wafer's eccentricity angle. This avoids interference from the edge notch on the light intensity data, ensuring that the extreme values ​​used to calculate the eccentricity angle originate from the standard circular edge of the wafer, rather than the edge notch, thus guaranteeing the accuracy of the eccentricity angle.

[0067] In this embodiment, the actual edge light intensity offset of the wafer is determined based on the distance relationship between the interval to which the wafer edge notch belongs in the variation curve and the maximum value of the edge light intensity value in the variation curve.

[0068] Optionally, in this embodiment, the actual edge light intensity offset of the wafer is determined based on the distance relationship between the interval to which the wafer edge notch belongs in the variation curve and the maximum / minimum value of the edge light intensity value in the variation curve. Specifically, this includes the following two cases: Case 1: If the distance between the interval of the notch at the edge of the wafer and one of the extreme values ​​is less than a preset first distance threshold, then the actual edge light intensity offset of the wafer is determined based on the other extreme value and the standard edge light intensity value corresponding to the wafer.

[0069] Among them, the extreme values ​​include the maximum and minimum values, and the standard edge light intensity value is the edge light intensity value corresponding to the wafer when no eccentricity is generated.

[0070] In this embodiment of the application, if the distance between the interval of the notch at the edge of the wafer and one of the extreme values ​​is less than a preset first distance threshold, the difference between the other extreme value and the standard edge light intensity value corresponding to the wafer is calculated to obtain the actual edge light intensity offset corresponding to the wafer.

[0071] For example, assuming the distance between the notch area at the wafer edge in the variation curve (i.e., the rotation angle range corresponding to the peak segment) and the maximum value of the edge light intensity value in the variation curve is less than a preset first distance threshold, the difference between the standard edge light intensity value (e.g., 2000) and the minimum edge light intensity value (e.g., 300) in the variation curve is calculated, resulting in an actual edge light intensity offset of 2000-300=1700. Furthermore, assuming the distance between the notch area at the wafer edge in the variation curve and the minimum edge light intensity value in the variation curve is less than a preset first distance threshold, the difference between the maximum edge light intensity value (e.g., 3700) and the standard edge light intensity value (e.g., 2000) in the variation curve is calculated, resulting in an actual edge light intensity offset of 3700-2000=1700.

[0072] Case 2: If the distance between the interval of the wafer edge notch and the two values ​​of the maximum and minimum values ​​is greater than or equal to the first distance threshold, then calculate half of the difference between the maximum and minimum values ​​to obtain the actual edge light intensity offset of the wafer.

[0073] In this embodiment of the application, if the distance between the interval of the wafer edge notch and the maximum value of the edge light intensity value in the variation curve is greater than or equal to the first distance threshold, and the distance between the interval of the wafer edge notch and the minimum value of the edge light intensity value in the variation curve is greater than or equal to the first distance threshold, then half of the difference between the maximum value and the minimum value is calculated to obtain the actual edge light intensity offset of the wafer.

[0074] For example, if the maximum value of the edge light intensity in the variation curve is 3700 and the minimum value of the edge light intensity in the variation curve is 300, then the actual edge light intensity offset corresponding to the wafer is determined to be (3700-300) / 2=1700.

[0075] This approach eliminates interference from edge notch regions before calculating the eccentricity distance, avoiding light intensity anomalies caused by the notches and ensuring that the eccentricity calculation is unaffected by the notches. Special handling is applied to scenarios where the edge notch region is close to the edge light intensity maximum to prevent calculation errors caused by edge notch interference. This significantly improves the stability of eccentricity distance determination under complex conditions and demonstrates strong anti-interference capabilities. Simultaneously, in the absence of interference, (maximum value) is used. The light intensity offset is calculated by dividing the minimum value by 2. The logic is simple and can accurately obtain the eccentricity distance.

[0076] Optionally, in this embodiment of the application, when determining the eccentricity of the wafer based on the actual edge light intensity offset and the pre-calibrated scaling factor, the ratio of the actual edge light intensity offset to the first scaling factor is calculated to obtain the eccentricity of the wafer; or the product of the actual edge light intensity offset and the second scaling factor is calculated to obtain the eccentricity of the wafer.

[0077] In this embodiment, the formula for calculating the wafer's eccentricity is D = L ÷ k1, or D = L × k2. Where D is the wafer's eccentricity, L is the actual edge light intensity offset corresponding to the wafer, k1 is a first proportionality coefficient, and k2 is a second proportionality coefficient. Furthermore, it is worth noting that this embodiment does not restrict whether the first or second proportionality coefficient is used to calculate the eccentricity. Thus, calculating the eccentricity using either a ratio or a product is simple, yields stable results, and allows for quick and accurate determination of the true eccentricity.

[0078] In this embodiment, since the edge light intensity value of the wafer is linearly related to the offset distance of the wafer relative to the theoretical center of the orientation station, multiple offset distances and their corresponding edge light intensity values ​​can be obtained by changing the offset distance of the wafer relative to the theoretical center of the orientation station. The scaling factor can be calibrated by using multiple offset distances and their corresponding edge light intensity values.

[0079] Optionally, this application provides a possible embodiment for calibrating the scaling factor, specifically performing the following operations: SA1: The minimum offset distance and edge light intensity value of the original orientation sensor when the photosensitive area is not blocked by the wafer are used as the first calibration point.

[0080] For example, see Figure 7 The figure shows a schematic diagram of the relationship curve between offset distance and edge light intensity value provided in an embodiment of this application. The photosensitive area of ​​the original orientation sensor in the figure has a photosensitive width of 11mm. The horizontal axis is the offset distance of the wafer center relative to the theoretical center point of the orientation station. The vertical axis is the wafer edge light intensity value (excluding edge notch edge light intensity value) corresponding to each offset distance. Point C in the figure is the first calibration point. The horizontal coordinate of point C (-5.5mm) is the maximum offset distance when the photosensitive area of ​​the original orientation sensor is not blocked by the wafer. The vertical coordinate of point C (Max) is the edge light intensity value of the unblocked photosensitive area of ​​the wafer edge collected by the original orientation sensor when the wafer center is in the first position. The first position refers to the wafer center position where the distance between the wafer center and the theoretical center point of the orientation station is the smallest among the wafer center positions where the photosensitive area of ​​the original orientation sensor is not blocked by the wafer.

[0081] SA2: The offset distance and edge light intensity value when the wafer is unbiased and the edge of the wafer is at the center of the photosensitive area are used as the second calibration point.

[0082] For example, such as Figure 7As shown in the figure, point D is the second calibration point. The horizontal coordinate of point D (0mm) is the offset distance when the wafer is unbiased and the edge of the wafer is in the center of the photosensitive area. The vertical coordinate of point D (Mid) is the edge light intensity value of the wafer edge collected by the original orientation sensor when the center of the wafer is in the second position. The second position refers to the position of the wafer center when the wafer is unbiased and the edge of the wafer is in the center of the photosensitive area.

[0083] SA3: Determine the scaling factor based on the offset distance between the first calibration point and the second calibration point and the edge light intensity value.

[0084] In this embodiment of the application, the light intensity difference between the edge light intensity value of the first calibration point and the edge light intensity value of the second calibration point is calculated, and the distance difference between the offset distance of the first calibration point and the offset distance of the second calibration point is calculated. Then, the ratio between the light intensity difference and the distance difference is calculated to obtain a first proportional coefficient, or the ratio between the distance difference and the light intensity difference is calculated to obtain a second proportional coefficient.

[0085] Optionally, in the embodiments of this application, when calibrating the scaling factor, it is possible to... Figure 7 The scaling factor is calculated from any two points along the oblique line. For example, the scaling factor can be determined by the offset distance between the third and second calibration points and the edge light intensity value, or by the offset distance between the third and first calibration points and the edge light intensity value. The third calibration point is... Figure 7 Point E in the diagram represents the minimum offset distance when the photosensitive area of ​​the original orientation sensor is completely blocked by the wafer. The ordinate (Min) of point E represents the edge light intensity value of the photosensitive area blocked by the wafer edge, as collected by the original orientation sensor when the center of the wafer is at the third position. The third position refers to the wafer center position where the distance between the wafer center and the theoretical center point of the orientation station is the smallest among all wafer center positions where the photosensitive area of ​​the original orientation sensor is completely blocked by the wafer.

[0086] In this way, the scaling factor can be fully automatically calibrated using any two points along the diagonal line, without manual intervention, external equipment, or repeated adjustments to the robotic arm. This significantly reduces the difficulty of the calibration operation, allowing for a quick and easy determination of the eccentricity distance when wafer misalignment occurs. Preferably, using the first and second calibration points enables fully automatic scaling factor calibration, resulting in faster and more accurate scaling factor determination.

[0087] Furthermore, it is worth noting that the scaling factor is affected by environmental parameters (such as temperature) and existing orientation sensor parameters (such as operating voltage). In this embodiment, to avoid the influence of environmental parameters and existing orientation sensor parameters on the scaling factor under different time periods, a correlation model between the scaling factor and environmental parameters and existing orientation sensor parameters can be established. The environmental parameters and existing orientation sensor parameters are monitored in real time, and the scaling factor is fine-tuned based on the real-time parameter values ​​to ensure the accuracy of the conversion relationship between wafer offset distance and edge light intensity offset under different operating conditions. Alternatively, the scaling factor calibration process described in steps SA1~SA3 can be repeated before each wafer orientation or at preset time intervals to dynamically and adaptively determine the current scaling factor, ensuring the accuracy of the conversion relationship between wafer offset distance and edge light intensity offset under different operating conditions.

[0088] Furthermore, in this embodiment, after obtaining the eccentricity angle and eccentricity distance, correction can be performed based on the eccentricity angle and eccentricity distance to enable the robotic arm to accurately grasp the wafer from the orientation station. The specific steps are as follows: S404: Based on the site location information, eccentricity angle, and eccentricity distance of the orientation station in the robot coordinate system, determine the center position information of the wafer in the robot coordinate system.

[0089] In this embodiment, the location information of the orientation station in the robot coordinate system is obtained, and coordinate compensation calculation is performed based on the location information, eccentric angle and eccentric distance to obtain the center position information of the wafer in the robot coordinate system.

[0090] Optionally, in this embodiment, coordinate compensation calculation can be performed based on the standard station position information, eccentric angle, and eccentric distance of the orientation station in a spatial positioning coordinate system (such as a spatial rectangular coordinate system and a geographic coordinate system) to obtain the standard center position information of the wafer in the spatial positioning coordinate system. Then, according to the relevant parameters of the robot arm, the standard center position information in the spatial positioning coordinate system is converted into the center position information in the robot arm coordinate system.

[0091] Optionally, after obtaining the eccentricity angle and eccentricity distance, if the eccentricity distance is determined to be greater than a preset second distance threshold, an error message is generated and sent to the target object, without performing any correction. This adds an alarm mechanism, enabling real-time monitoring and timely feedback of abnormal states, effectively avoiding risks such as transmission failures and process anomalies caused by excessive eccentricity distance, thus improving system security and equipment stability.

[0092] The target groups include, but are not limited to: equipment operators, on-site maintenance engineers, system monitoring personnel, and remote technical support personnel.

[0093] S405: Based on the center position information, control the robotic arm to pick up the wafer from the directional station.

[0094] In this embodiment, the controller controls the robotic arm to pick up the wafer from the directional station according to the center position information.

[0095] In this way, the center position of the wafer in the robot's coordinate system can be calculated directly based on the site location information, eccentric angle, and eccentric distance, achieving automatic coordinate compensation. The controller can directly control the robot to grasp the wafer in the corrected position without secondary actions, which greatly improves the wafer grasping accuracy and transmission efficiency.

[0096] Therefore, based on the wafer eccentricity detection method described in steps S401 to S405 above, refer to... Figure 8 The diagram shows a logic diagram of a wafer eccentricity detection method provided in this application embodiment. The controller sends an orientation command to the orientation station. The orientation sensor collects the edge light intensity value corresponding to each rotation angle when the wafer rotates 360 degrees at the orientation station and sends it to the controller. Based on the obtained edge light intensity value corresponding to each rotation angle, the controller generates a curve of edge light intensity value changing with rotation angle. Based on the curve, the controller determines the eccentricity detection result. Based on the maximum and minimum values ​​of edge light intensity value in the curve, the interval to which the wafer edge notch belongs, and the proportional coefficient, the controller determines the eccentricity angle and eccentricity distance when eccentricity occurs. Then, the controller judges whether the eccentricity distance is greater than a second distance threshold. If the eccentricity distance is greater than the second distance threshold, an error message is generated and sent to the target object. If the eccentricity distance is not greater than the second distance threshold, the controller determines the center position information of the wafer in the robot coordinate system based on the station position information of the orientation station in the robot coordinate system, the eccentricity angle, and the eccentricity distance. Based on the center position information, the controller controls the robot to pick up the wafer from the orientation station.

[0097] Furthermore, based on the same technical concept, embodiments of this application provide a wafer eccentricity detection device, which is used to implement the above-described method flow of embodiments of this application. For example, see [link to relevant documentation]. Figure 9 As shown, the wafer eccentricity detection device 900 may include: a data acquisition module 901, a first determination module 902, a second determination module 903, a calibration module 904, and a deviation correction module 905, wherein: The data acquisition module 901 is used to acquire the edge light intensity value of the wafer when the wafer rotates 360 degrees at the orientation station during the wafer orientation process, which is collected by the original orientation sensor of the wafer transmission system, and generate a curve of the edge light intensity value changing with the rotation angle. The first determining module 902 is used to determine the wafer eccentricity detection result based on the change curve; The second determining module 903 is used to determine the rotation angle corresponding to the maximum and minimum values ​​of edge light intensity in the variation curve as the eccentricity angle of the wafer when the eccentricity detection result indicates that the wafer has eccentricity. Based on the maximum and minimum values ​​of edge light intensity in the variation curve and the interval to which the wafer edge notch belongs in the variation curve, it determines the actual edge light intensity offset of the wafer. Based on the actual edge light intensity offset and a pre-calibrated scaling factor, it determines the eccentricity distance of the wafer, wherein the scaling factor is the conversion factor between the offset distance of the wafer and the edge light intensity offset.

[0098] In an optional embodiment, the calibration module 904 is used to: The maximum offset distance and edge light intensity value of the original orientation sensor when the photosensitive area is not blocked by the wafer are used as the first calibration point; The offset distance and edge light intensity value when the wafer is unbiased and the edge of the wafer is at the center of the photosensitive area are used as the second calibration point; The scaling factor is determined based on the offset distance between the first and second calibration points and the edge light intensity value.

[0099] In an optional embodiment, when determining the wafer eccentricity detection result based on the change curve, the first determining module 902 is further configured to: If the change curve shows a sine or cosine distribution pattern, then the wafer eccentricity detection result is determined to be wafer eccentricity. If the curve is a basically flat horizontal line, then the wafer eccentricity detection result is determined to be that the wafer has not been eccentric.

[0100] In one optional embodiment, the scaling factor includes a first scaling factor and a second scaling factor; The first proportionality coefficient is used to characterize the edge light intensity shift corresponding to each unit offset distance of the wafer; The second proportionality coefficient is used to characterize the offset distance corresponding to each unit of edge light intensity offset generated by the wafer.

[0101] In an optional embodiment, when determining the wafer's eccentricity distance based on the actual edge light intensity offset and a pre-calibrated scaling factor, the second determining module 903 is further configured to: The wafer's eccentricity is obtained by calculating the ratio of the actual edge light intensity offset to the first proportional coefficient; or by calculating the product of the actual edge light intensity offset and the second proportional coefficient.

[0102] In an optional embodiment, when determining the actual edge light intensity offset of the wafer based on the maximum and minimum values ​​of the edge light intensity values ​​in the variation curve and the interval to which the wafer edge notch belongs in the variation curve, the second determining module 903 is further configured to: If the distance between the interval of the wafer edge notch and one of the extreme values ​​is less than a preset first distance threshold, then the actual edge light intensity offset of the wafer is determined based on the other extreme value and the standard edge light intensity value corresponding to the wafer. The extreme values ​​include the maximum value and the minimum value, and the standard edge light intensity value is the edge light intensity value corresponding to the wafer when no eccentricity is generated. If the distance between the interval of the wafer edge notch and two of the maximum and minimum values ​​is greater than or equal to the first distance threshold, then calculate half of the difference between the maximum and minimum values ​​to obtain the actual edge light intensity offset of the wafer.

[0103] In an optional embodiment, the correction module 905 is used to: Based on the site location information, eccentricity angle and eccentricity distance of the orientation site in the robot coordinate system, the center position information of the wafer in the robot coordinate system is determined. Based on the center position information, the robot arm is controlled to pick up the wafer from the directional station.

[0104] In an optional embodiment, the correction module 905 is further configured to: When the eccentricity distance exceeds the preset second distance threshold, an error message is generated and sent to the target object.

[0105] Based on the description of the method and apparatus embodiments above, an exemplary embodiment of the present invention also provides an electronic device, including: at least one processor; and a memory communicatively connected to the at least one processor. The memory stores a computer program executable by the at least one processor, which, when executed by the at least one processor, causes the electronic device to perform the method according to an embodiment of the present invention.

[0106] This application also provides a non-transitory computer-readable storage medium storing a computer program, wherein the computer program, when executed by a computer's processor, is used to cause the computer to perform a method according to an embodiment of this application.

[0107] This application also provides a computer program product, including a computer program, wherein the computer program, when executed by a computer's processor, is used to cause the computer to perform a method according to an embodiment of this application.

[0108] See Figure 10The diagram shown below illustrates a structural block diagram of an electronic device 1000 that can serve as a server or client of this application, which is an example of a hardware device that can be applied to various aspects of this application. The electronic device is intended to represent various forms of digital electronic computer devices, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the application described and / or claimed herein.

[0109] like Figure 10 As shown, the electronic device 1000 includes a computing unit 1001, which can perform various appropriate actions and processes according to a computer program stored in a read-only memory (ROM) 1002 or a computer program loaded from a storage unit 1008 into a random access memory (RAM) 1003. The RAM 1003 may also store various programs and data required for the operation of the device 1000. The computing unit 1001, ROM 1002, and RAM 1003 are interconnected via a bus 1004. An input / output (I / O) interface 1005 is also connected to the bus 1004.

[0110] Multiple components in electronic device 1000 are connected to I / O interface 1005, including: input unit 1006, output unit 1007, storage unit 1008, and communication unit 1009. Input unit 1006 can be any type of device capable of inputting information to electronic device 1000. Input unit 1006 can receive input digital or character information and generate key signal inputs related to user settings and / or function control of electronic device. Output unit 1007 can be any type of device capable of presenting information and may include, but is not limited to, a display, speaker, video / audio output terminal, vibrator, and / or printer. Storage unit 1008 may include, but is not limited to, disk and optical disk. Communication unit 1009 allows electronic device 1000 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks, and may include, but is not limited to, modems, network cards, infrared communication devices, wireless communication transceivers and / or chipsets, such as Bluetooth devices, WiFi devices, worldwide interoperability for microwave access (WiMax) devices, cellular communication devices, and / or the like.

[0111] The computing unit 1001 can be various general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the computing unit 1001 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 1001 performs the various methods and processes described above. For example, in some embodiments, the above-described wafer eccentricity detection method can be implemented as a computer software program tangibly contained in a machine-readable medium, such as storage unit 1008. In some embodiments, part or all of the computer program can be loaded and / or installed on the electronic device 1000 via ROM 1002 and / or communication unit 1009. In some embodiments, the computing unit 1001 can be configured to perform the above-described wafer eccentricity detection method by any other suitable means (e.g., by means of firmware).

[0112] The program code used to implement the methods of this application may be written in any combination of one or more programming languages. This program code may be provided to a processor or controller of a general-purpose computer, special-purpose computer, or other programmable data processing device, such that when executed by the processor or controller, the functions / operations specified in the flowcharts and / or block diagrams are implemented. The program code may be executed entirely on a machine, partially on a machine, as a standalone software package partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0113] In the context of this application, a machine-readable medium can be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium can be, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, RAM, ROM, erasable programmable read-only memory (EPROM) or flash memory, optical fibers, compact disc read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0114] As used in this application, the terms "machine-readable medium" and "computer-readable medium" refer to any computer program product, device, and / or apparatus (e.g., disk, optical disk, memory, programmable logic device, PLD) used to provide machine instructions and / or data to a programmable processor, including machine-readable media that receive machine instructions as machine-readable signals. The term "machine-readable signal" refers to any signal used to provide machine instructions and / or data to a programmable processor.

[0115] To provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device for displaying information to the user (e.g., a cathode ray tube (CRT) or liquid crystal display (LCD) monitor); and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the computer. Other types of devices can also be used to provide interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).

[0116] The systems and technologies described herein can be implemented in computing systems that include backend components (e.g., as data servers), or computing systems that include middleware components (e.g., application servers), or computing systems that include frontend components (e.g., user computers with graphical user interfaces or web browsers through which users can interact with implementations of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication of any form or medium (e.g., communication networks). Examples of communication networks include local area networks (LANs), wide area networks (WANs), and the Internet.

[0117] Computer systems can include clients and servers. Clients and servers are generally located far apart and typically interact through communication networks. Client-server relationships are created by computer programs running on the respective computers and having a client-server relationship with each other.

[0118] Furthermore, it should be understood that the above-disclosed embodiments are merely preferred embodiments of this application and should not be construed as limiting the scope of the invention. Therefore, any equivalent variations made in accordance with the claims of this invention are still within the scope of this application.

Claims

1. A method for detecting wafer eccentricity, characterized in that, include: During the wafer orientation process, the edge light intensity value of the wafer is acquired by the original orientation sensor of the wafer transmission system when the wafer rotates 360 degrees at the orientation station, and a curve of the edge light intensity value changing with the rotation angle is generated. Based on the change curve, the eccentricity detection result of the wafer is determined; When the eccentricity detection result indicates that the wafer is eccentric, the rotation angle corresponding to the maximum and minimum values ​​of the edge light intensity in the variation curve is determined as the eccentricity angle of the wafer. Based on the maximum and minimum values ​​of the edge light intensity in the variation curve and the interval to which the wafer edge notch belongs in the variation curve, the actual edge light intensity offset of the wafer is determined. Based on the actual edge light intensity offset and a pre-calibrated scaling factor, the eccentricity distance of the wafer is determined. The scaling factor is a conversion factor between the offset distance of the wafer and the edge light intensity offset. The step of determining the rotation angle corresponding to the extreme value of the edge light intensity value in the variation curve as the eccentricity angle of the wafer includes: if the distance between the interval to which the wafer edge notch belongs in the variation curve and one of the extreme values ​​is less than a preset first distance threshold, then the rotation angle corresponding to the other extreme value is determined as the eccentricity angle of the wafer. The determination of the actual edge light intensity offset of the wafer based on the maximum and minimum values ​​of the edge light intensity values ​​in the variation curve and the interval to which the wafer edge notch belongs in the variation curve includes: if the distance between the interval of the wafer edge notch and one of the maximum and minimum values ​​is less than the first distance threshold, then the actual edge light intensity offset of the wafer is determined based on the other value of the maximum and minimum values ​​and the standard edge light intensity value corresponding to the wafer, wherein the maximum and minimum values ​​include a maximum value and a minimum value, and the standard edge light intensity value is the edge light intensity value corresponding to the wafer when no eccentricity is generated; if the distance between the interval of the wafer edge notch and both of the maximum and minimum values ​​is greater than or equal to the first distance threshold, then half of the difference between the maximum value and the minimum value is calculated to obtain the actual edge light intensity offset of the wafer.

2. The method of claim 1, wherein, The method further includes: The maximum offset distance and edge light intensity value of the original orientation sensor when the photosensitive area is not blocked by the wafer are used as the first calibration point; The offset distance and edge light intensity value when the wafer is unbiased and the edge of the wafer is at the center of the photosensitive area are used as the second calibration point; The scaling factor is determined based on the offset distance between the first calibration point and the second calibration point and the edge light intensity value.

3. The method of claim 1, wherein, The determination of the wafer's eccentricity detection result based on the change curve includes: If the change curve shows a sine or cosine distribution pattern, then the eccentricity detection result of the wafer is determined to be that the wafer has eccentricity; If the change curve is a basically straight horizontal line, then the eccentricity detection result of the wafer is determined to be that the wafer has not been eccentric.

4. The method of claim 1, wherein, The scaling factor includes a first scaling factor and a second scaling factor; The first proportionality coefficient is used to characterize the edge light intensity shift corresponding to each unit offset distance of the wafer; The second proportionality coefficient is used to characterize the offset distance corresponding to each unit edge light intensity offset generated by the wafer.

5. The method of claim 4, wherein, Determining the eccentricity distance of the wafer based on the actual edge light intensity offset and a pre-calibrated scaling factor includes: The wafer's eccentricity is obtained by calculating the ratio of the actual edge light intensity offset to the first proportional coefficient; or by calculating the product of the actual edge light intensity offset and the second proportional coefficient.

6. The method of claim 1, wherein, The method further includes: Based on the site location information of the orientation station in the robot coordinate system, the eccentricity angle and the eccentricity distance, the center position information of the wafer in the robot coordinate system is determined; Based on the center position information, the robotic arm is controlled to pick up the wafer from the directional station.

7. The method of claim 1, wherein, The method further includes: When the eccentricity distance is greater than the preset second distance threshold, an error message is generated and sent to the target object.

8. A wafer eccentricity detection device, characterized in that, include: The data acquisition module is used to acquire the edge light intensity value of the wafer collected by the original orientation sensor of the wafer transmission system when the wafer rotates 360 degrees at the orientation station during the wafer orientation process, and generate a curve of the edge light intensity value changing with the rotation angle. The first determining module is used to determine the eccentricity detection result of the wafer based on the change curve; The second determining module is used to determine the rotation angle corresponding to the maximum and minimum values ​​of the edge light intensity values ​​in the variation curve as the eccentricity angle of the wafer when the eccentricity detection result indicates that the wafer has eccentricity, and to determine the actual edge light intensity offset of the wafer based on the maximum and minimum values ​​of the edge light intensity values ​​in the variation curve and the interval to which the wafer edge notch belongs in the variation curve, and to determine the eccentricity distance of the wafer based on the actual edge light intensity offset and a pre-calibrated proportional coefficient, wherein the proportional coefficient is a conversion factor between the offset distance of the wafer and the edge light intensity offset; Wherein, when determining the rotation angle corresponding to the extreme value of the edge light intensity value in the variation curve as the eccentricity angle of the wafer, the second determining module is further configured to: if the distance between the interval to which the wafer edge notch belongs in the variation curve and one of the extreme values ​​is less than a preset first distance threshold, then determine the rotation angle corresponding to the other extreme value as the eccentricity angle of the wafer; when determining the actual edge light intensity offset of the wafer based on the extreme value of the edge light intensity value in the variation curve and the interval to which the wafer edge notch belongs in the variation curve, the second determining module is further configured to: if the distance between the interval to which the wafer edge notch belongs and the interval to which the wafer edge notch belongs and the actual edge light intensity offset is less than a preset first distance threshold, then determine the rotation angle corresponding to the other extreme value as the eccentricity angle of the wafer; If the distance between the notch interval and one of the extreme values ​​is less than the first distance threshold, then the actual edge light intensity offset of the wafer is determined based on the other extreme value and the standard edge light intensity value corresponding to the wafer. The extreme values ​​include a maximum value and a minimum value, and the standard edge light intensity value is the edge light intensity value corresponding to the wafer when no eccentricity is generated. If the distance between the notch interval and both extreme values ​​is greater than or equal to the first distance threshold, then half of the difference between the maximum value and the minimum value is calculated to obtain the actual edge light intensity offset of the wafer.

9. An electronic device, comprising: include: processor; as well as Stored program memory, The program includes instructions that, when executed by the processor, cause the processor to perform the method as described in any one of claims 1-7.

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