限幅缓冲驱动电路、通信接口信号接收电路及存储系统
By introducing a transmission gate control circuit into the limiting buffer drive circuit, the problem of the output voltage of the resistor output isolation structure recovering to a high voltage in the off state is solved, which improves the circuit stability and the reliability of the LVT MOS transistor, and realizes effective control of the output node voltage.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- KINGTIGER TESTING TECH (SZ) LTD
- Filing Date
- 2026-05-14
- Publication Date
- 2026-07-17
AI Technical Summary
The existing resistor output isolation structure may cause the output voltage to recover to a high voltage level when the circuit is off, which leads to a decrease in the reliability of low threshold voltage MOSFETs (LVT MOSFETs).
A transmission gate control circuit is introduced into the limiting buffer drive circuit, which enables the output node to be connected or isolated from the subsequent logic circuit according to the working state. Through the linkage control of the transmission gate and the differential circuit, the output node is prevented from returning to a high voltage level or from becoming floating under abnormal conditions.
This improves circuit stability, reduces the risk of high-voltage signals impacting LVT MOSFETs, ensures the reliability of subsequent logic circuits, and achieves effective control of output node voltage without affecting the high-speed signal transmission capability of differential circuits.
Smart Images
Figure CN122224245B_ABST