Hybrid cis / evs image sensor providing high evs resolution
By introducing EVS transistors and dedicated event-driven circuits into the image sensor, the problem of insufficient EVS resolution in the prior art is solved, realizing a hybrid CIS/EVS imaging system with high EVS resolution and high image quality.
CN122227100APending Publication Date: 2026-06-16OMNIVISION TECHNOLOGIES INC
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- OMNIVISION TECHNOLOGIES INC
- Filing Date
- 2025-12-11
- Publication Date
- 2026-06-16
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Figure CN122227100A_ABST
Abstract
Disclosed herein provide hybrid CIS / EVS image sensors with high EVS resolution. In one embodiment, a pixel arrangement includes a plurality of pixels and a color filter array. Each of the plurality of pixels can include a photosensor, a floating diffusion region, a transfer transistor, and an EVS transistor configured to selectively couple the photosensor to event-driven circuitry corresponding to the pixel. The color filter array can include a plurality of color filters arranged in a tessellation pattern over the photosensors of the plurality of pixels such that the photosensor of a first pixel of the plurality of pixels corresponds to a first color and the photosensor of a second pixel of the plurality of pixels corresponds to a second color different from the first color. The event-driven circuitry corresponding to the plurality of pixels can be (a) different from one another and (b) selectively coupled to one another via a common node.
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