Semiconductor device and method of manufacturing the same

Abstract

The application discloses a semiconductor device and a preparation method thereof. The preparation method comprises the following steps: providing a substrate, wherein the substrate comprises an SGT region and a BCD region; forming a shield gate structure in the SGT region and the BCD region; forming a first well region of a first conductive type, a second well region of a second conductive type, a source region of the second conductive type, a drain region of the second conductive type and a body region of the first conductive type in the BCD region, and forming a gate structure above the BCD region; forming an interlayer dielectric layer above the SGT region and the BCD region, and forming a first contact hole exposing a gate layer, a second contact hole exposing the body region and a third contact hole exposing a control gate located in the BCD region in the interlayer dielectric layer; filling a conductive metal in the first contact hole, the second contact hole and the third contact hole, and forming a patterned metal layer on the interlayer dielectric layer. According to the semiconductor device and the preparation method thereof, the gate control capability of the BCD part can be effectively improved without increasing the process cost.

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