A semiconductor device and an image sensor

Abstract

The application describes a semiconductor device, comprising: a photosensitive device layer, comprising a plurality of photosensitive elements arranged in a two-dimensional array; a color filter layer arranged on one side of the photosensitive device layer, the color filter layer comprising a plurality of color filters of different colors arranged periodically, and the plurality of color filters are arranged one-to-one with the plurality of photosensitive elements to form corresponding pixels; and a multilayer thin film optical layer arranged between the photosensitive device layer and the color filter layer, the multilayer thin film optical layer having an optical structure formed by a plurality of multilayer thin films with different refractive indexes, and the optical structure is located below at least two color filters of different colors to increase the number of pixel color channels. The application also describes an image sensor comprising the above semiconductor device. In the present application, the combination of the color filter layer and the multilayer thin film optical layer is used as an optical regulation layer of the image sensor, which is conducive to realizing more image color channels and obtaining high spectral resolution.

Description

Technical Field

[0001] This invention relates to the field of imaging, and in particular to a semiconductor device and an image sensor comprising the semiconductor device. Background Technology

[0002] Typically, CMOS semiconductor devices use organic color filters (red, green, and blue) for light filtering, and then rely on backend algorithms to reproduce the colors of the image. However, this method of reproducing object colors using only three colors suffers from insufficient color gamut and is highly susceptible to the influence of the lighting source. Using multispectral cameras with more color channels to achieve higher spectral resolution is a feasible solution to these problems. Multispectral cameras generally employ two approaches: scanning and snapshot. Scanning cameras require an optical system to scan and separate spectral information; they are bulky and slow, hindering low-cost, large-scale deployment. Snapshot cameras, on the other hand, do not require an optical scanning structure, resulting in smaller size and higher integration, and have broad application potential. Pixel-level snapshot multispectral cameras use more color filtering methods to increase the number of color channels, thereby achieving higher spectral resolution. Typical methods include organic color filters, multilayer thin-film filters, and metasurface filters. Summary of the Invention

[0003] In view of this, the present invention provides a semiconductor device, comprising: a photosensitive device layer including a plurality of photosensitive elements arranged in a two-dimensional array; a color filter layer disposed on one side of the photosensitive device layer, the color filter layer including a plurality of color filters of different colors arranged periodically, and the plurality of color filters and the plurality of photosensitive elements being disposed one-to-one to form corresponding pixels; and a multilayer thin film optical layer disposed between the photosensitive device layer and the color filter layer, the multilayer thin film optical layer having a plurality of optical structures formed by stacking multilayer thin films of different refractive indices, any optical structure being located below at least two different color filters to increase the number of pixel color channels.

[0004] Optionally, the optical structure includes at least a first multilayer dielectric film and a second multilayer dielectric film, the first multilayer dielectric film and the second multilayer dielectric film having different thicknesses along a first direction, the first direction being the direction from the photosensitive device layer to the color filter layer.

[0005] Optionally, the optical structure includes at least a first multilayer dielectric film and a second multilayer dielectric film, wherein the materials of the first multilayer dielectric film and the second multilayer dielectric film are stacked in different ways.

[0006] Optionally, the optical structure is composed of a lower reflector, an intermediate layer and an upper reflector stacked sequentially along a first direction. The upper and lower reflectors have the same periodic structure and material, and are both made of multiple first optical film layers and multiple second optical film layers stacked alternately in sequence. The refractive index of the first optical film layer is higher than that of the second optical film layer.

[0007] Optionally, the thickness of the intermediate layer of the first multilayer dielectric film and the intermediate layer of the second multilayer dielectric film are different.

[0008] Optionally, the materials stacking methods of the upper or lower reflector of the first multilayer dielectric film and the second multilayer dielectric film are different.

[0009] Optionally, the refractive indices of the intermediate layers of the first multilayer dielectric film and the intermediate layers of the second multilayer dielectric film are different.

[0010] Optionally, the optical structure is composed of at least two optical films with different refractive indices stacked non-periodically.

[0011] Optionally, the multilayer thin-film optical layer also includes a planar medium. Along the direction from the photosensitive device layer to the color filter layer, there is a non-overlapping area between the color filter layer and the multilayer thin-film optical layer. The planar medium covers the surface of the optical structure and the non-overlapping area.

[0012] The present invention also provides an image sensor comprising the semiconductor device described above.

[0013] Compared with the prior art, this application has at least the following outstanding advantages:

[0014] In this application, a multilayer thin-film optical layer is disposed between the photosensitive device layer and the color filter layer, so that the total light transmittance is controlled by the combination of the color filter layer and the multilayer thin-film optical layer. The position of the transmission peak is controlled by designing the stacking method, material, and thickness of the thin films within the multilayer thin-film optical layer. Furthermore, by selecting different color filter materials, different absorption peaks can be ensured for different pixels, achieving high spectral resolution. Simultaneously, since the materials used in the multilayer thin-film optical layer are typically non-absorbent, while the absorption of the color filter layer can reduce reflections from the semiconductor device surface and alleviate stray light-related problems in the image, combining the color filter layer and the multilayer thin-film optical layer as the optical control layer of the image sensor is beneficial for better realizing more image color channels. Attached Figure Description

[0015] Figure 1 This is a partial cross-sectional schematic diagram of a semiconductor device provided in an embodiment of this application;

[0016] Figure 2 This is a partial cross-sectional schematic diagram of another semiconductor device provided in an embodiment of this application;

[0017] Figure 3 This is a cross-sectional structural diagram of an optical structure provided in an embodiment of this application;

[0018] Figure 4 This is a cross-sectional schematic diagram of another optical structure provided in the embodiments of this application;

[0019] Figure 5 This is a partial cross-sectional schematic diagram of another semiconductor device provided in the embodiments of this application;

[0020] Figure 6 This is a schematic diagram of the combination of a color filter layer and a multilayer thin film optical layer provided in an embodiment of this application;

[0021] Figure 7 This is a schematic diagram of another combination of a color filter layer and a multilayer thin film optical layer provided in an embodiment of this application;

[0022] Figure 8 yes Figure 7 The schematic diagram of the combination of the color filter layer and the multilayer thin film optical layer is shown as a partial cross-sectional view along c-c'.

[0023] Component designation explanation

[0024] 10 Semiconductor Devices

[0025] 100 photosensitive layer

[0026] 101 Photosensitive element

[0027] 200 color filter layers

[0028] 202 color filter

[0029] 300+ thin film optical layers

[0030] 400 microlens layers

[0031] 311 First Multilayer Dielectric Thin Film

[0032] 312 Second Multilayer Dielectric Thin Film

[0033] 320 Flat medium

[0034] 50 First optical film layer

[0035] 60 Second optical film layer

[0036] 72 First non-periodic film layer

[0037] 74 Second non-periodic film layer

[0038] 76 Third non-periodic film layer

[0039] 78 Fourth non-periodic film layer Detailed Implementation

[0040] The following specific examples illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. This application can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application.

[0041] In the detailed description of the embodiments of this application, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged and not to scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of this application. In actual fabrication, the three-dimensional spatial dimensions of length, width, and depth should be included.

[0042] For ease of description, spatial relation terms such as “below,” “under,” “lower than,” “below,” “above,” and “upper” may be used herein to describe the relationship between one element or feature shown in the accompanying drawings and other elements or features. It will be understood that these spatial relation terms are intended to include directions other than those depicted in the drawings for devices in use or operation. Furthermore, when a layer is referred to as being “between” two layers, it may be the only layer between the two layers, or there may be one or more layers in between.

[0043] In the context of this application, the structure described above the first feature may include embodiments in which the first and second features are formed in direct contact, or embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0044] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of this application. Therefore, the illustrations only show the components related to this application and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0045] In the prior art, color filtering of image sensors is usually achieved through color filter layers. However, the method of restoring the color of an object by relying solely on three-color images has the problems of insufficient color gamut and great influence from the lighting source. Therefore, how to obtain more color channels to achieve higher spectral resolution is an urgent problem to be solved in this application.

[0046] This application proposes a solution to the above-mentioned technical problems, mainly by combining the concept of color filter layers and multilayer thin film optical layers, and proposes a series of possible solutions.

[0047] like Figure 1 As shown, this application provides a semiconductor device 10, which includes:

[0048] The photosensitive device layer 100 includes a plurality of photosensitive elements 101 arranged in a two-dimensional array;

[0049] Understandably, the semiconductor device 10 includes a plurality of photosensitive elements 101 arranged in a two-dimensional array of rows and columns within the photosensitive device layer 100. For clarity, Figure 1 Only four photosensitive elements 101 are shown in the diagram. In actual applications of the semiconductor device 10, the two-dimensional array may include thousands of rows and / or columns of photosensitive elements 101; similarly, in some embodiments, the two-dimensional array may have arrangements other than rows and / or columns.

[0050] A color filter layer 200 is disposed on one side of the photosensitive device layer 100. The color filter layer 200 includes a variety of color filters 202 of different colors arranged periodically, and the multiple color filters 202 are disposed one-to-one with multiple photosensitive elements 101 to form corresponding pixels.

[0051] Understandably, color filter 202 can be made of optical resin, and by adjusting the proportion of materials inside the optical resin, light of different wavelengths can pass through, thereby achieving the color filtering effect. Generally, color filter 202 includes three basic colors: red (R), green (G), and blue (B). The most common color filter arrangement is the Bayer array RGGB, where each basic repeating unit has one R color, one B color, and two G color filters. Of course, in other practical applications, there are also pixel array arrangements such as RGBW or Quad Bayer Coding (QBC) for the basic repeating units.

[0052] A multilayer thin-film optical layer 300 is disposed between the photosensitive device layer 100 and the color filter layer 200. The multilayer thin-film optical layer 300 has several optical structures made of stacked multilayer thin films with different refractive indices. Each optical structure is located below at least two different color filters 202 to increase the number of pixel color channels.

[0053] Understandably, any optical structure is located below at least two different color filters 202, that is, along the direction from the photosensitive layer to the color filter layer. An optical structure overlaps with at least two different color filters. In layman's terms, an optical structure can be shared by multiple different color pixels. However, in practical applications, an optical structure is not limited to corresponding to two different color pixels. It can also correspond to three different color pixels, or even correspond to more than three different colors. For example, an optical structure corresponds to a repeating unit of a Bayer array, that is, an optical structure corresponds to one R, one B, and two G color filters. By sharing an optical structure, the number of color channels of multiple pixels can be increased, and the number of color filters corresponding to an optical structure can be designed according to the required spectrum.

[0054] Optionally, the optical structure can be a periodic multilayer thin film, i.e., the optical structure is formed by regularly stacked multilayer thin films, such as a distributed Bragg reflector. In this structure, by setting up Bragg reflectors, light is reflected at the interface when it passes through different media. The optical properties of light, such as reflection and transmission, are related to the refractive indices between the media. Therefore, by periodically stacking thin films with different refractive indices, when light passes through these thin films with different refractive indices, the light reflected back from each layer undergoes constructive interference due to the change in phase angle, and then combines with each other to obtain strongly reflected light. Optionally, the optical structure can be a non-periodic multilayer thin film. Its principle is similar to that of a distributed Bragg reflector. Thin films with different refractive indices are stacked together non-periodically. When light passes through these thin films with different refractive indices, the light reflected back from each layer undergoes constructive interference due to the change in phase angle. Then, they combine together to obtain strongly reflected light. Moreover, compared to a distributed Bragg reflector, the stacking of non-periodic multilayer thin films can be obtained according to the preset optical design. Therefore, the use of non-periodic multilayer thin film structure has greater freedom and can further obtain a narrowband high-quality factor transmission spectrum similar to that of a distributed Bragg reflector, thereby achieving higher spectral resolution.

[0055] Optionally, in some embodiments, reference continues to be made to... Figure 1 The semiconductor device 10 further includes a microlens layer 400 disposed on the side of the color filter layer 200 away from the photosensitive device layer 100, the microlens layer comprising a plurality of microlenses. Figure 1 In this embodiment, each microlens corresponds to a color filter and a photosensitive element to form a pixel. In other embodiments, such as a four-bayer array pixel arrangement, a microlens can cover two or four pixels. The purpose of making microlenses is to concentrate more light into the photosensitive element 101 of the photosensitive device layer 100 to improve the photosensitivity of the photosensitive element 101.

[0056] In this application, a multilayer thin-film optical layer is disposed between the photosensitive device layer and the color filter layer, so that the total light transmittance is controlled by the combination of the color filter layer and the multilayer thin-film optical layer. Furthermore, the position of the transmission peak is controlled by designing the stacking method, material, and thickness of the thin films within the multilayer thin-film optical layer. By selecting different color filter materials, different absorption peaks can be ensured for different pixels, achieving high spectral resolution. Simultaneously, since the materials used in the multilayer thin-film optical layer are typically non-absorbent, while the absorption of the color filter layer can reduce reflections from the semiconductor device surface and alleviate stray light-related problems in the image, combining the color filter layer and the multilayer thin-film optical layer as the optical control layer of the image sensor is beneficial for better realizing more image color channels.

[0057] like Figure 2 In the illustrated embodiment, the optical structure includes at least a first multilayer dielectric film 311 and a second multilayer dielectric film 312. The first multilayer dielectric film 311 and the second multilayer dielectric film 312 have different thicknesses along a first direction X, wherein the first direction X is the direction from the photosensitive device layer 100 to the color filter layer 200.

[0058] Optional, such as Figure 3As shown, the optical structure is a distributed Bragg reflector, meaning it consists of a lower reflector, an intermediate layer, and an upper reflector stacked sequentially along the first direction X. The upper and lower reflectors have the same periodic structure and material, both constructed by alternating stacks of multiple first optical layers 50 and multiple second optical layers 60. The refractive index of the first optical layer 50 is higher than that of the second optical layer 60. For example, the first optical layer 50 can be made of silicon nitride (Si3N4) or titanium dioxide (TiO2), and the second optical layer 60 can be made of silicon dioxide (SiO2). It should be noted that the materials of the first and second optical layers 50 can be set according to actual needs, as long as the refractive index of the first optical layer 50 is higher than that of the second optical layer 60; no limitation is made here. Furthermore, the intermediate layer has a combination of one or more different refractive indices, materials, and thicknesses from the first and second optical layers 50 to disrupt the periodicity of the upper and lower reflectors. Therefore, in this embodiment, the different thicknesses of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 along the first direction X refer to the different thicknesses of the intermediate layer of the first multilayer dielectric film 311 and the intermediate layer of the second multilayer dielectric film 312. Increasing the thickness of the intermediate layer can increase the transmission wavelength of the optical structure, and conversely, decreasing the thickness of the intermediate layer will decrease the transmission wavelength of the optical structure. Therefore, due to the difference in the thickness of the intermediate layer, the first multilayer dielectric film 311 and the second multilayer dielectric film 312 have inconsistent transmission wavelengths, which changes the transmission peak position of the optical structure. Even if the first multilayer dielectric film 311 and the second multilayer dielectric film 312 are located below a color filter of the same color, it can be ensured that the absorption peaks of the corresponding pixels are different, thereby achieving high spectral resolution.

[0059] In other embodiments, the optical structure is formed by aperiodically stacking at least two optical film layers with different refractive indices. It is understood that the optical properties of optical thin films, such as reflection and absorption, are influenced by factors including, but not limited to, film thickness and film material. When light passes through films of different thicknesses, its optical path and phase changes differently, thereby affecting the interference effect and altering the optical properties. Thin films of different materials exhibit significant differences in refractive index; for example, silicon dioxide (SiO2) has a refractive index of approximately 1.46, silicon nitride (Si3N4) has a refractive index of approximately 2, and titanium oxide (TiO2) has a refractive index of approximately 2.5. Furthermore, the optical properties of the optical film layers can be altered by adjusting factors such as the thickness and material type. That is, using optical film layers of the same material but different thicknesses, using optical film layers of different materials but the same thickness, and using optical film layers of different materials and different thicknesses can all achieve an optical structure with at least two different optical film layers stacked aperiodically. Substituting this into a specific scheme, such as... Figure 4In the illustrated embodiment, both the first multilayer dielectric film 311 and the second multilayer dielectric film 312 are formed by non-periodic stacking of a first aperiodic film 72, a second aperiodic film layer 74, a third aperiodic film layer 76, and a fourth aperiodic film layer 78. The difference lies in the different thicknesses of the aperiodic film layers of the first multilayer dielectric film 311 and the second multilayer dielectric film 312. Therefore, in this embodiment, the difference in thickness of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 along the first direction X refers to the different thicknesses of the non-periodic stacked optical film layers of the first multilayer dielectric film 311 and the second multilayer dielectric film 312. The materials of the optical film layers of the two can be exactly the same or different. By adjusting the thickness of any non-periodic stacked optical film layer, since there is a correlation between the thickness of the film and its optical properties, the transmission peak position of the optical structure can be changed, thus ensuring that the absorption peaks of different pixels are different, achieving high spectral resolution. Furthermore, the thickness of each layer of the non-periodic multilayer thin film structure can be obtained by various optimization algorithms, resulting in film layers with a smaller thickness than the total thickness of the distributed Bragg mirror.

[0060] exist Figure 5 In the illustrated embodiment, the optical structure includes at least a first multilayer dielectric film 311 and a second multilayer dielectric film 312, wherein the materials of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 are stacked in different ways.

[0061] In some embodiments, when the optical structure is a distributed Bragg reflector, the different material stacking methods of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 can refer to the different material stacking methods of the upper or lower reflector between the first multilayer dielectric film 311 and the second multilayer dielectric film 312. For example, the upper or lower reflector of the first multilayer dielectric film 311 is formed by alternating stacking of high-reflectivity Si3N4 and low-reflectivity SiO2, and the upper or lower reflector of the second multilayer dielectric film 312 is formed by alternating stacking of high-reflectivity TiO2 and low-reflectivity SiO2. The above examples are only illustrative. The upper or lower reflector of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 can also be formed by stacking optical film layers of other materials, depending on the actual needs, and are not limited here.

[0062] In other embodiments, when the optical structure is a distributed Bragg mirror, the materials of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 are stacked differently. Alternatively, the refractive indices of the intermediate layers of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 may be different, that is, the materials of the intermediate layers of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 may be different.

[0063] In other embodiments, when the optical structure is a structure formed by non-periodic stacking of at least two optical film layers with different refractive indices, the material stacking mode of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 is different. This can mean that the first multilayer dielectric film 311 and the second multilayer dielectric film 312 have the same optical film structure, but the stacking order of the optical film structure or the thickness of the optical film layer is different.

[0064] In other embodiments, when the optical structure is a structure formed by non-periodic stacking of at least two optical film layers with different refractive indices, the material stacking mode of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 is different. This can mean that the first multilayer dielectric film 311 and the second multilayer dielectric film 312 have optical film layer structures with different materials, and the stacking order of multiple optical film layers between the two can be different or the same.

[0065] Therefore, in this embodiment, the degree of freedom in adjusting the material stacking mode of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 is extremely high. The material stacking mode can be adjusted according to the process conditions, thereby changing the transmission peak position of different optical structures, ensuring that the absorption peaks of different pixels are different, and achieving high spectral resolution.

[0066] The following describes the combination and control method of color filter layers and multilayer thin-film optical layers in conjunction with pixel arrays. Figure 6 For example, the color filter layer of the pixel array is arranged in a Bayer RGGB array. Figure 6 In this embodiment, the first multilayer dielectric film 311 and the second multilayer dielectric film are each located below a Bayer array RGGB repeating unit. In the existing Bayer array structure, an RGGB consists of four filters forming a filter unit, which can only reproduce the original color of the photographed object using three colors. However, in this embodiment, since the first multilayer dielectric film 311 overlaps with the four pixels of one Bayer array RGGB repeating unit, and the second multilayer dielectric film 312 overlaps with the four pixels of another Bayer array RGGB repeating unit, and given that the first multilayer dielectric film 311 and the second multilayer dielectric film 312 have different transmittances, six new color channels can be formed to reproduce the original color of the photographed object. Compared with a Bayer array using a single-layer color filter, this embodiment has higher spectral resolution and color reproduction capability.

[0067] Furthermore, in some embodiments, in conjunction with reference to Figure 7 and Figure 8The multilayer thin-film optical layer 300 also includes a planarizing medium 320. Along the direction from the photosensitive device layer 100 to the color filter layer 200, the color filter layer 200 and the multilayer thin-film optical layer 300 have a non-overlapping region. The planarizing medium 320 covers the surface of the optical structure and the non-overlapping region. The color filter layer of the pixel array is arranged in a Bayer RGGB array. Figure 7 In this embodiment, the R, G, and B color filters overlap with the first multilayer dielectric film 311, overlap with the second multilayer dielectric film 312, and do not overlap with either the first or second multilayer dielectric film 311. In other words, the spectrum of this embodiment is partially controlled by a single-layer color filter and partially controlled by a combination of the color filter layer and the multilayer film optical layer. Therefore, in addition to the three original R, G, and B color filters, six new color channels are added, and the original color of the captured object can be restored through nine color channels, resulting in higher spectral resolution and color reproduction capability.

[0068] This application also provides an image sensor comprising the aforementioned semiconductor device 10. In this image sensor, a multilayer thin-film optical layer is disposed between the photosensitive layer and the color filter layer, such that the total light transmittance is controlled by the combination of the color filter layer and the multilayer thin-film optical layer. Furthermore, by designing the stacking method, material, and thickness of the thin films within the multilayer thin-film optical layer, the position of its transmission peak can be controlled. By selecting different color filter materials, different absorption peaks for different pixels can be ensured, achieving high spectral resolution. Simultaneously, since the materials used in the multilayer thin-film optical layer are typically non-absorbent, while the absorption of the color filter layer can reduce reflections from the semiconductor device surface and alleviate stray light-related problems in the image, combining the color filter layer and the multilayer thin-film optical layer as the optical control layer of the image sensor is beneficial for better realizing more image color channels.

[0069] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.

Claims

1. A semiconductor device, characterized in that, include: The photosensitive device layer includes multiple photosensitive elements arranged in a two-dimensional array; A color filter layer is disposed on one side of the photosensitive device layer. The color filter layer includes a variety of color filters of different colors arranged periodically, and the multiple color filters are disposed one-to-one with the multiple photosensitive elements to form corresponding pixels. A multilayer thin-film optical layer is disposed between the photosensitive device layer and the color filter layer. The multilayer thin-film optical layer has several optical structures formed by stacking multiple thin films with different refractive indices. Each of the optical structures is located below at least two different colored color filters to increase the number of pixel color channels.

2. The semiconductor device as claimed in claim 1, characterized in that, The optical structure includes at least a first multilayer dielectric film and a second multilayer dielectric film, the first multilayer dielectric film and the second multilayer dielectric film having different thicknesses along a first direction, the first direction being the direction from the photosensitive device layer to the color filter layer.

3. The semiconductor device as described in claim 1, characterized in that, The optical structure includes at least a first multilayer dielectric film and a second multilayer dielectric film, wherein the materials of the first multilayer dielectric film and the second multilayer dielectric film are stacked in different ways.

4. The semiconductor device as described in claim 2 or 3, characterized in that, The optical structure is composed of a lower reflector, an intermediate layer and an upper reflector stacked sequentially along the first direction. The upper reflector and the lower reflector have the same periodic structure and material, and are both made of multiple first optical film layers and multiple second optical film layers stacked alternately in sequence. The refractive index of the first optical film layer is higher than that of the second optical film layer.

5. The semiconductor device as claimed in claim 4, characterized in that, The thickness of the intermediate layer of the first multilayer dielectric film and the intermediate layer of the second multilayer dielectric film are different.

6. The semiconductor device as claimed in claim 4, characterized in that, The upper or lower reflector of the first multilayer dielectric film and the second multilayer dielectric film have different material stacking methods.

7. The semiconductor device as claimed in claim 4, characterized in that, The intermediate layer of the first multilayer dielectric film and the intermediate layer of the second multilayer dielectric film are made of different materials.

8. The semiconductor device as described in claim 2 or 3, characterized in that, The optical structure is composed of at least two optical films with different refractive indices stacked non-periodically.

9. The semiconductor device as claimed in claim 1, characterized in that, The multilayer thin-film optical layer further includes a planar medium. Along the direction from the photosensitive device layer to the color filter layer, there is a non-overlapping region between the color filter layer and the multilayer thin-film optical layer. The planar medium covers the surface of the optical structure and the non-overlapping region.

10. An image sensor, characterized in that, It includes the semiconductor device as described in any one of claims 1-9.

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