A multispectral absorbing semiconductor structure and image sensor

Abstract

The application describes a multispectral absorption semiconductor structure, comprising: a photosensitive device layer comprising a plurality of light-sensitive elements arranged in a two-dimensional pixel array; a filter layer located on one side of the photosensitive device layer, the filter layer comprising a plurality of different color filters, and the color filters are arranged one-to-one with the light-sensitive elements to form corresponding pixels; a spectrum regulation layer located on the side of the filter layer away from the photosensitive device layer, the spectrum regulation layer comprising a plurality of color regulation pieces, the color regulation pieces have overlapping wavelength ranges with the corresponding color filters, and at least part of the color regulation pieces are offset relative to the corresponding color filters below towards the center direction of the two-dimensional pixel array. The application also provides an image sensor comprising the above semiconductor structure. In the application, the combination of the double-layer different color filter structure can provide more color channels for the pixel array, which is conducive to better implementation of high spectral resolution, and the double-layer color filter structure is misaligned to perform pupil correction, reducing the degradation of the sensitivity of the light-sensitive elements.

Description

Technical Field

[0001] This invention relates to the field of imaging, and in particular to a semiconductor structure for multispectral absorption and an image sensor comprising the semiconductor structure. Background Technology

[0002] Typically, CMOS image sensors use organic color filters (red, green, and blue) for light filtering, followed by backend algorithms to reproduce the image's colors. However, this method, relying solely on three colors to reproduce object colors, suffers from insufficient color gamut and is highly susceptible to the influence of lighting sources. Using multispectral cameras with more color channels to achieve higher spectral resolution is a feasible solution. Common multispectral cameras fall into two categories: scanning and snapshot. Scanning cameras require an optical system to scan and separate spectral information, resulting in larger size and slower imaging speeds, hindering low-cost, large-scale deployment. Snapshot cameras, on the other hand, do not require an optical scanning structure, offering smaller size and higher integration, and have broad application potential. Pixel-level snapshot multispectral cameras use more color filters to increase the number of color channels, thereby achieving higher spectral resolution. Typical methods include organic color filters, multilayer thin-film filters, and metasurface filters. Among these, the organic color filter approach is similar to existing pixel structures, offering better process compatibility, while the other two approaches face challenges in manufacturing processes and higher costs. Summary of the Invention

[0003] In view of this, the present invention provides a semiconductor structure for multispectral absorption, comprising: a photosensitive device layer including a plurality of photosensitive elements arranged in a two-dimensional pixel array; a filter layer located on one side of the photosensitive device layer, the filter layer including a plurality of color filters of different colors, and the color filters and photosensitive elements are arranged in a one-to-one correspondence to form corresponding pixels; and a spectral modulation layer located on the side of the filter layer away from the photosensitive device layer, the spectral modulation layer including a plurality of color tone plates, the wavelength range of the color tone plates and the corresponding color filters overlapping, and at least some of the color tone plates being offset toward the center direction of the two-dimensional pixel array relative to the corresponding color filters below.

[0004] Optionally, along the vertical direction from the photosensitive layer to the spectral control layer, a single color filter is set to correspond to at least two adjacent color filters of different colors.

[0005] Optionally, the filter layer uses a 4x4 arrangement of adjacent color filters as a basic repeating unit, and each color filter is set to correspond to the four adjacent color filters arranged in a 2x2 pattern at the center of the basic repeating unit.

[0006] Optionally, the color palette includes at least a first color palette and a second color palette, wherein the first color palette and the second color palette are different colors; and / or, the color palette includes at least a third color palette and a fourth color palette, wherein the third color palette and the fourth color palette are of different sizes.

[0007] Optionally, in at least some of the corresponding pixels, the color filter is offset relative to the photosensitive element in the direction toward the center of the two-dimensional pixel array.

[0008] Optionally, the semiconductor structure may further include a microlens layer located on the side of the spectral modulation layer away from the filter layer. The microlens layer includes a plurality of microlenses that are offset relative to the color palette below towards the center of the two-dimensional pixel array.

[0009] Optionally, the semiconductor structure includes at least a first region located at the center of the two-dimensional pixel array and a second region located at the edge of the two-dimensional pixel array; wherein, in the first region, the color palette is offset by a distance relative to the corresponding color filter below it in the direction toward the center of the two-dimensional pixel array, and in the second region, the color palette is offset by a distance b relative to the corresponding color filter below it in the direction toward the center of the two-dimensional pixel array, and a < b.

[0010] Optionally, the semiconductor structure further includes a grid structure, comprising a first grid structure and a second grid structure, wherein the first grid structure is located between adjacent color tones and the second grid structure is located between adjacent color filters.

[0011] Optionally, the first grid structure is offset relative to the corresponding second grid structure below it in the direction of the center of the two-dimensional pixel array.

[0012] The present invention also provides an image sensor comprising the above-described semiconductor structure.

[0013] Compared with the prior art, the present invention has at least the following outstanding advantages:

[0014] In this embodiment, to address the issue that a single-layer color filter cannot satisfy multi-spectral resolution, a spectral modulation layer is provided above the filter layer. This spectral modulation layer includes several color tone plates whose wavelength range overlaps with that of the color filter. The combination of two different color filter structures provides more color channels for the pixel array. Furthermore, the absorption of the color filter reduces reflection from the semiconductor structure surface, alleviating stray light issues in the image. Therefore, combining the filter layer and the spectral modulation layer as the optical structure of the semiconductor structure is beneficial for achieving higher spectral resolution. To achieve pupil correction, at least some of the color tone plates are offset relative to the corresponding color filter below towards the center of the two-dimensional pixel array, thereby improving the sensitivity of the photosensitive element. Attached Figure Description

[0015] Figure 1This is a partial cross-sectional structural diagram of a semiconductor structure provided in an embodiment of this application;

[0016] Figure 2 This is a partial cross-sectional view of another semiconductor structure provided in an embodiment of this application;

[0017] Figure 3 This is a schematic diagram of the pixel inner film layer offset relationship provided in an embodiment of this application;

[0018] Figure 4 This is a partial cross-sectional structural diagram of another semiconductor structure provided in the embodiments of this application;

[0019] Figure 5 This is a schematic diagram of a pixel array structure provided in an embodiment of this application;

[0020] Figure 6 This is a schematic diagram of another pixel inner film layer offset relationship provided in an embodiment of this application;

[0021] Figure 7 This is a schematic diagram of another pixel array structure provided in an embodiment of this application;

[0022] Figure 8 This is a schematic diagram of another pixel array structure provided in the embodiments of this application;

[0023] Figure 9 This is a schematic diagram of the first and second regions provided in the embodiments of this application;

[0024] Figure 10 This is a partial cross-sectional schematic diagram of another semiconductor structure provided in the embodiments of this application.

[0025] Component designation explanation

[0026] 10 Semiconductor Structure

[0027] 100 photosensitive layer

[0028] 101 Photosensitive element

[0029] 200 filter layers

[0030] 202 color filter

[0031] 300 spectral modulation layer

[0032] 303 color palette

[0033] 400 microlens layers

[0034] 404 microlens

[0035] 3031 First Color Palette

[0036] 3032 Second Color Palette

[0037] 3033 Third Color Palette

[0038] 3034 Fourth Color Palette Detailed Implementation

[0039] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0040] In the detailed description of embodiments of the present invention, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged and not to scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of the present invention. In actual fabrication, the three-dimensional spatial dimensions of length, width, and depth should be included.

[0041] For ease of description, spatial relation terms such as “below,” “under,” “lower than,” “below,” “above,” and “upper” may be used herein to describe the relationship between one element or feature shown in the accompanying drawings and other elements or features. It will be understood that these spatial relation terms are intended to include directions other than those depicted in the drawings for devices in use or operation. Furthermore, when a layer is referred to as being “between” two layers, it may be the only layer between the two layers, or there may be one or more layers in between.

[0042] In the context of this application, the structure described above the first feature may include embodiments in which the first and second features are formed in direct contact, or embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0043] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the illustrations only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0044] In the prior art, filter layers are usually used to achieve color filtering of image sensors. Common color filter arrays are Bayer arrays composed of three colors: RGB. However, the method of relying on only three-color images to restore the color of objects has the problems of insufficient color gamut and great influence from the lighting source. Therefore, how to obtain more color channels to achieve higher spectral resolution is the problem that this application needs to solve.

[0045] This application proposes a solution to the above-mentioned technical problems, which mainly involves controlling the total spectral transmittance by combining a filter layer and a spectral control layer, and proposes a series of possible solutions.

[0046] like Figure 1 As shown, this application provides a multispectral absorption semiconductor structure 10, comprising:

[0047] The photosensitive device layer 100 includes a plurality of photosensitive elements 101 arranged in a two-dimensional array;

[0048] Understandably, the semiconductor structure 10 includes a plurality of photosensitive elements 101 arranged in a two-dimensional array of rows and columns within the photosensitive device layer 100. For clarity, Figure 1 Only six photosensitive elements 101 are shown in the diagram. In actual applications of the semiconductor structure 10, the two-dimensional array may include thousands of rows and / or columns of photosensitive elements 101; similarly, in some embodiments, the two-dimensional array may have arrangements other than rows and / or columns.

[0049] The filter layer 200 is located on one side of the photosensitive device layer 100. The filter layer 200 includes a variety of first color filters 202 of different colors arranged periodically, and the first color filters 202 are arranged one-to-one with the photosensitive element 101 to form corresponding pixels.

[0050] Understandably, color filter 202 can be made of optical resin, and by adjusting the proportions of the materials within the optical resin, light of different wavelengths can pass through, thereby achieving a color filtering effect. Generally, color filter 202 includes three basic colors: red (R), green (G), and blue (B). The most common color filter arrangement is the Bayer array RGGB, where each basic repeating unit has one R color, one B color, and two G color filters. Of course, in some practical applications, there are also pixel array arrangements such as RGBW or Quad Bayer Coding (QBC). In other practical applications, color filter 202 can also include a CMMY pixel array arrangement of C (Cyan), M (Magenta), and Y (Yellow).

[0051] The spectral control layer 300 is located on the side of the filter layer 200 away from the photosensitive device layer 100. The spectral control layer 300 includes a plurality of color tone plates 303. The wavelength range of the color tone plates 303 overlaps with that of the corresponding color filters 202, and at least some of the color tone plates 303 are offset relative to the corresponding color filters 202 below them toward the center of the two-dimensional pixel array.

[0052] Understandably, color filter 303 can also be made of optical resin, and by adjusting the proportion of materials inside the optical resin, a color different from that of color filter 202 but with overlapping wavelength ranges can be formed, so that light of the corresponding wavelength range can be incident.

[0053] Optionally, along the vertical direction X from the photosensitive layer 100 to the spectral modulation layer 300, the thickness of the color tone 303 is less than the thickness of the color filter 202. Although the optical structure combining the color filter and the color tone can change the color of the spectrum, the thickness after superposition will cause excessive absorption of incident light, which will lead to a decrease in signal quality. Therefore, the thickness of the color tone 303 can be set to be less than the thickness of the color filter 202, and the thickness after superposition of the color filter 202 and the color tone 303 should be less than the critical value. For example, the thickness of the color tone is 400-500 nm, and the thickness of the color filter is 400-600 nm.

[0054] It needs to be explained that the wavelength ranges of the color filter 303 and the corresponding color filter 202 overlap. Here, "overlapping" refers to positional correspondence; that is, along the vertical direction X from the photosensitive layer 100 to the spectral control layer 300, there is an overlapping area between the color filter 303 and the color filter 202, with the color filter 303 located above the color filter 202. The incident path of the light received by the corresponding pixel is from the color filter 303 to the color filter 202 and then to the photosensitive element 101. By superimposing the color filter 303, whose wavelength range overlaps, with the color filter 202 below it, a new color channel can be added to the pixel array. Meanwhile, another portion of the color filter 202 is not positioned above a color filter 303, thus retaining the original color channel of that filter. Simultaneously, in a semiconductor structure, light with a larger incident beam angle may affect the optical performance of the semiconductor structure. For example, reflected light, when the oblique light characteristics are higher than required, can degrade the image; therefore, pupil correction is necessary. This shifts the color tone 303 relative to the corresponding color filter 202 below towards the center of the two-dimensional pixel array, reducing the degradation of the photosensitive element's sensitivity.

[0055] Optional, continue to refer to Figure 1 In at least some of the corresponding pixels, the color filter 202 is offset relative to the photosensitive element 101 towards the center of the two-dimensional pixel array. Similarly, offsetting the color filter relative to the photosensitive element 101 towards the center of the two-dimensional pixel array can further achieve pupil correction and reduce the sensitivity degradation of the photosensitive element.

[0056] Optionally, in some embodiments, see Figure 2 As shown, the semiconductor structure 10 further includes a microlens layer 400 located on the side of the spectral modulation layer 300 away from the filter layer 200. The microlens layer 400 includes a plurality of microlenses 404, which are offset relative to the lower color tone filter 303 toward the center of the two-dimensional pixel array. Figure 2 In this embodiment, each microlens 404 corresponds to a color filter 202 and a photosensitive element 101 to form a pixel. In other embodiments, such as a pixel arrangement of a four-bayer array, a microlens can cover two or four pixels. The purpose of making microlenses is to concentrate more light into the photosensitive element 101 of the photosensitive device layer 100 to improve the photosensitivity of the photosensitive element 101.

[0057] Therefore, further, the pixel structure used for pupil correction is as follows: Figure 3 As shown, the microlens, color filter CF2, color filter CF1, and photosensitive element PD, which are distributed from top to bottom, are all offset relative to the structure below towards the center of the two-dimensional pixel array to form corresponding light incident channels.

[0058] In this embodiment, to address the issue that a single-layer color filter cannot satisfy multi-spectral resolution, a spectral modulation layer is provided above the filter layer. This spectral modulation layer includes several color tone plates whose wavelength range overlaps with that of the color filter. The combination of two different color filter structures provides more color channels for the pixel array. Furthermore, the absorption of the color filter reduces reflection from the semiconductor structure surface, alleviating stray light issues in the image. Therefore, combining the filter layer and the spectral modulation layer as the optical structure of the semiconductor structure is beneficial for achieving higher spectral resolution. To achieve pupil correction, at least some of the color tone plates are offset relative to the corresponding color filter below towards the center of the two-dimensional pixel array, thereby improving the sensitivity of the photosensitive element.

[0059] In some embodiments, such as Figure 4 As shown, along the vertical direction X from the photosensitive layer 100 to the spectral control layer 300, a single color filter 303 is correspondingly set with at least two adjacent color filters 202.

[0060] As can be understood, similar to the above embodiments, the corresponding setting here refers to the positional correspondence, that is, the adjacent color filters 202 of the at least two colors share a color tone 303, and the incident path of the light received by the pixels corresponding to the adjacent color filters 202 of the at least two colors is from the color tone 303 to the color filter 202 and then to the photosensitive element 101. The corresponding settings of the following embodiments can be referred to this description and will not be repeated.

[0061] For example, since red and green light have overlapping wavelength ranges, and blue and green light also have overlapping wavelength ranges, a single green light color filter can be set to correspond to the red and blue light color filters below. In this embodiment, adjacent pixels of different colors share a single color filter, which simplifies the process and saves costs.

[0062] In some embodiments, the filter layer 200 uses adjacent color filters 202 arranged in a 4x4 pattern as a basic repeating unit, and a single color filter 303 is correspondingly arranged with four adjacent color filters 202 arranged in a 2x2 pattern at the center of the basic repeating unit. For example... Figure 5 As shown, each color filter 303 corresponds to four adjacent color filters 202 arranged in a 2x2 pattern at the center of the basic repeating unit. Figure 5 The center dot in the image represents the center of the two-dimensional pixel array, and the color palettes 303 are all offset relative to the color filter 202 below towards the center of the two-dimensional pixel array.

[0063] Optionally, the color tone 303 and one of the corresponding color filters 202 are the same color. For example, the color filters 202 corresponding to a single color tone 303 are three colors: R, G, and B. Since red light and green light have overlapping wavelength ranges, and blue light and green light also have overlapping wavelength ranges, the color tone above is set to color G. Thus, through the superposition of the colors of the color filters and the color tone, in addition to the three color channels provided by the filter layer itself, the spectral control layer will provide two additional color channels.

[0064] Optionally, the color tone 303 and its corresponding color filter 202 are different colors. Similarly, by superimposing the colors of the color filter and the color tone, the spectral control layer will provide three additional color channels in addition to the three color channels provided by the filter layer itself.

[0065] In the embodiments of this application, the pixel structure used for pupil correction is as follows: Figure 6 As shown, the microlens, color filter CF2, adjacent color filters CF1 arranged in a 2x2 pattern, and photosensitive element PD distributed from top to bottom are all offset relative to the structure below towards the center of the two-dimensional pixel array to form corresponding light incident channels and realize pupil correction. Moreover, a single color filter can be set with multiple color filters, which reduces process costs and helps to better realize more image color channels.

[0066] In some embodiments, the color palette includes at least a first color palette and a second color palette, and the first color palette and the second color palette are different colors. For example... Figure 7 As shown, based on the above embodiment, the color palette includes a first color palette 3031 and a second color palette 3032 of different colors. It is understood that... Figure 7The arrangement of color filters and color palettes shown is for illustrative purposes only; other arrangements can achieve similar functions.

[0067] In this embodiment, the spectral control layer may include a first color filter and a second color filter of different colors. The combination of color filters of different colors with color filters helps to achieve more image color channels.

[0068] In some embodiments, the color palette includes at least a third color palette and a fourth color palette, and the third color palette and the fourth color palette have different sizes. Figure 8 As shown, based on the above embodiment, the color palette includes a third color palette 3033 and a fourth color palette 3034 of different sizes. Each third color palette 3033 corresponds to four adjacent color filters 202 arranged in a 2x2 pattern, and each fourth color palette 3034 corresponds to two adjacent color filters 202. It is understood that... Figure 8 The arrangement of the color filters and color palettes shown is for illustrative purposes only. Other arrangements can achieve similar functions, and the colors of the third and fourth color palettes are not limited here.

[0069] In the embodiments of this application, there may be differences in size between color pickers, which not only realizes more image color channels, but also increases the degree of freedom in the design of each pixel structure in the semiconductor structure.

[0070] In some embodiments, such as Figure 9 As shown, the semiconductor structure includes at least a first region A1 located at the center of the two-dimensional pixel array and a second region A2 located at the edge of the two-dimensional pixel array;

[0071] In the first region A1, the color palette is offset by a distance 'a' relative to the corresponding color filter below it in the direction of the center of the two-dimensional pixel array. In the second region A2, the color palette is offset by a distance 'b' relative to the corresponding color filter below it in the direction of the center of the two-dimensional pixel array, and a < b.

[0072] Further optionally, in the first region A1, the microlens is offset by a distance c relative to the color filter below in the direction toward the center of the two-dimensional pixel array, and in the second region A2, the color filter is offset by a distance d relative to the corresponding color filter below in the direction toward the center of the two-dimensional pixel array, where c < d.

[0073] In this embodiment, due to the lens, vignetting and incident light leakage are more likely to occur in the edge area of ​​the pixel array. Therefore, different pupil correction amounts can be implemented in different areas of the pixel array. By making the offset of the edge area of ​​the pixel array greater than the offset of the center area of ​​the pixel array, pupil correction can be better achieved.

[0074] In some embodiments, such as Figure 10As shown, the semiconductor structure 10 also includes:

[0075] The grid structure includes a first grid structure 501 and a second grid structure 502. The first grid structure 501 is located between adjacent color palettes 303, and the second grid structure 502 is located between adjacent color filters 202.

[0076] Understandably, the grid structure needs to be made of light-shielding material, preferably formed from metal films or composite films such as aluminum (Al), tungsten (W), or copper (Cu). Metal materials have high light-shielding performance and are easy to process through fine processing such as etching.

[0077] Optionally, the first grid structure 501 is offset relative to the corresponding second grid structure 502 below it in the direction of the center of the two-dimensional pixel array.

[0078] Since a single grid structure cannot prevent vignetting and light leakage at the edge of the pixel array, the sensitivity of the photosensitive element deteriorates. Therefore, in this embodiment, the first grid structure is located between adjacent color filters, and the second grid structure is located between adjacent color filters. By offsetting the first grid structure relative to the corresponding second grid structure below it towards the center of the two-dimensional pixel array, the pupil correction amount in that area can be changed. This allows light to enter the semiconductor structure without leakage, preventing the sensitivity of the photosensitive element from deteriorating.

[0079] This application also provides an image sensor comprising the aforementioned semiconductor structure 10. In this image sensor, to address the issue that a single-layer color filter cannot satisfy multi-color spectrum requirements, a spectral modulation layer is disposed above the filter layer. The spectral modulation layer includes several color filters whose wavelength range overlaps with that of the color filter. The combination of two different color filter structures can provide more color channels for the pixel array. Furthermore, the absorption of the color filter can reduce the reflection on the surface of the semiconductor structure, alleviating stray light-related problems in the image. Therefore, combining the filter layer and the spectral modulation layer as the optical structure of the semiconductor structure is beneficial for achieving higher spectral resolution. To achieve pupil correction, at least some of the color filters are offset relative to the corresponding color filter below towards the center of the two-dimensional pixel array, thereby improving the sensitivity of the photosensitive element.

[0080] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.

Claims

1. A semiconductor structure for multispectral absorption, characterized in that, include: The photosensitive device layer includes multiple photosensitive elements arranged in a two-dimensional pixel array; A filter layer is located on one side of the photosensitive device layer. The filter layer includes a variety of color filters of different colors, and the color filters are arranged one-to-one with the photosensitive elements to form corresponding pixels. A spectral modulation layer is located on the side of the filter layer away from the photosensitive device layer. The spectral modulation layer includes a plurality of color tone plates, the wavelength ranges of which overlap with the corresponding light wavelength ranges of the color tone plates and at least a portion of the color tone plates are offset relative to the corresponding light wavelength ranges below them toward the center of the two-dimensional pixel array.

2. The semiconductor structure as described in claim 1, characterized in that, Along the vertical direction from the photosensitive device layer to the spectral control layer, each color filter is correspondingly arranged with at least two adjacent color filters of different colors.

3. The semiconductor structure as described in claim 2, characterized in that, The filter layer uses a 4x4 arrangement of adjacent color filters as a basic repeating unit, and each color filter is set to correspond to the four adjacent color filters arranged in a 2x2 pattern at the center of the basic repeating unit.

4. The semiconductor structure as described in claim 1, characterized in that, The color palette includes at least a first color palette and a second color palette, wherein the first color palette and the second color palette are different colors; and / or, The color palette includes at least a third color palette and a fourth color palette, and the third color palette and the fourth color palette have different sizes.

5. The semiconductor structure as described in claim 1, characterized in that, In at least some of the corresponding pixels, the color filter is offset relative to the photosensitive element toward the center of the two-dimensional pixel array.

6. The semiconductor structure as described in claim 1, characterized in that, The semiconductor structure also includes: A microlens layer is located on the side of the spectral modulation layer away from the filter layer. The microlens layer includes a plurality of microlenses, which are offset relative to the color palette below towards the center of the two-dimensional pixel array.

7. The semiconductor structure as described in claim 1, characterized in that, The semiconductor structure includes at least a first region located at the center of the two-dimensional pixel array and a second region located at the edge of the two-dimensional pixel array; In the first region, the color palette is offset by a distance 'a' relative to the corresponding color filter below it in the direction toward the center of the two-dimensional pixel array. In the second region, the color palette is offset by a distance 'b' relative to the corresponding color filter below it in the direction toward the center of the two-dimensional pixel array, and a < b.

8. The semiconductor structure as described in claim 1, characterized in that, The semiconductor structure also includes: The grid structure includes a first grid structure and a second grid structure, wherein the first grid structure is located between adjacent color palettes and the second grid structure is located between adjacent color filters.

9. The semiconductor structure as described in claim 8, characterized in that, The first grid structure is offset toward the center of the two-dimensional pixel array relative to the corresponding second grid structure below it.

10. An image sensor, characterized in that, A semiconductor structure comprising the multispectral absorption as described in any one of claims 1-9.

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