An image sensor and a method of manufacturing the same
By setting a conductive oxide layer between the top metal layer of the logic chip and the pixel chip, the spatial coupling interference problem caused by the current change of the logic circuit is solved, thereby improving the imaging quality and compatibility of the image sensor.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- WUHAN CHUXING TECH CO LTD
- Filing Date
- 2024-12-16
- Publication Date
- 2026-06-16
AI Technical Summary
In stacked CMOS image sensors, current variations within logic circuits can cause spatial coupling interference in pixel chips, affecting image quality.
A conductive oxide layer is placed between the top metal layer of the logic chip and the pixel chip to shield interference signals generated by the logic circuit. The thickness and uniformity of the conductive oxide layer are precisely controlled by controlling the fabrication process of the conductive oxide layer, such as magnetron sputtering, to reduce signal interference.
It effectively shields the signal interference of logic circuits, improves the imaging quality of image sensors, has good compatibility, and is suitable for hybrid bonding and through-silicon via (TSV) processes.
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Figure CN122227698A_ABST