Optoelectronic device and display apparatus

Abstract

The application discloses an optoelectronic device and a display device. The optoelectronic device comprises a bottom electrode, a functional layer and a top electrode which are stacked; the material of the functional layer comprises at least one organic compound; the structural formula of the organic compound comprises a fused structure composed of at least two rings and has at least one conjugated double bond. The optoelectronic device can prevent the damage of ultraviolet light to the film layer material of the device and has better light stability.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more particularly to an optoelectronic device and display apparatus. Background Technology

[0002] Optoelectronic devices emit light by releasing energy through the recombination of electrons and holes, converting electrical signals into optical signals, and are widely used in the lighting field. Optoelectronic devices typically have an anode, a cathode, and a functional layer located between the anode and the cathode.

[0003] During the fabrication and use of optoelectronic devices, exposure to ultraviolet light is inevitable, which can cause damage to the materials of the functional layer and affect the performance of the device. Summary of the Invention

[0004] In view of this, this application provides an optoelectronic device and a display apparatus.

[0005] The embodiments of this application are implemented as follows:

[0006] In a first aspect, embodiments of this application provide an optoelectronic device, including a stacked bottom electrode, a functional layer, and a top electrode;

[0007] The material of the functional layer includes at least one organic compound, the organic compound having a fused structure consisting of at least two rings and having at least one conjugated double bond.

[0008] Secondly, embodiments of this application provide a display device, including the optoelectronic devices described above.

[0009] The optoelectronic device proposed in this application can prevent ultraviolet light from damaging the film material of the device and has better photostability. Attached Figure Description

[0010] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0011] Figure 1 This is a schematic diagram of the structure of an optoelectronic device provided in the first embodiment of this application;

[0012] Figure 2 This is a schematic diagram of the structure of an optoelectronic device provided in the second embodiment of this application;

[0013] Figure 3 This is a schematic diagram of the structure of an optoelectronic device provided in the third embodiment of this application;

[0014] Figure 4 This is a schematic diagram of the structure of an optoelectronic device provided in the fourth embodiment of this application;

[0015] Figure 5 This is a schematic diagram of the structure of an optoelectronic device provided in the fifth embodiment of this application;

[0016] Figure 6 This is a schematic diagram of the structure of an optoelectronic device provided in the sixth embodiment of this application;

[0017] Figure 7 This is a schematic diagram of the structure of an optoelectronic device provided in the seventh embodiment of this application;

[0018] Figure 8 This is a schematic diagram of the structure of an optoelectronic device provided in the eighth embodiment of this application;

[0019] Reference numerals: Optoelectronic device 100; bottom electrode 10; top electrode 20; active layer 30; first monolayer film 41; first protective layer 42; first carrier functional layer 43; first transition layer 44; second protective layer 45; second transition layer 46; second monolayer film 51; third protective layer 52; second carrier functional layer 53; third transition layer 54. Detailed Implementation

[0020] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. In addition, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application. In this application, unless otherwise stated, directional terms such as "upper" and "lower" specifically refer to the drawing directions in the accompanying drawings. In addition, in the description of this application, the term "including" means "including but not limited to". Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and conciseness and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within that range. For example, it should be assumed that the description of a range from 1 to 6 specifically discloses subranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the range referred to.

[0021] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0022] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c," or "at least one of a, b, and c," can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0023] Terminology Explanation

[0024] In this application, a fused structure refers to a group formed by two rings sharing a common edge (i.e., connected by two shared atoms), for example... This represents the fusion of ring A and ring A', which are connected by two shared carbon atoms. Specifically, naphthalene is formed by the fusion of two benzene rings sharing one side, while indole is formed by the fusion of a benzene ring and a pyrrole ring sharing one side.

[0025] In this application, a conjugated double bond refers to two double bonds separated by a single bond in the molecular structure of a compound. This structure can be represented by chemical formulas such as C=CC=C, C=CC=O, etc.

[0026] In this application, the arcs in the molecular structure represent the connection between two atoms at the two ends of the arc, which can be connected by 0, 1 or more atoms.

[0027] In this application, "substitution" means that the hydrogen atom in the substituent is replaced by the substituent. "Substituted or unsubstituted" means that the defined group may or may not be substituted. When the defined group is substituted, it should be understood that the defined group can be substituted by one or more substituents. In this application, when the same substituent appears multiple times, it can be independently selected from different groups. If the general formula contains multiple R1s, then R1s can be independently selected from different groups.

[0028] In this application, "aromatic ring" refers to a cyclic structure containing at least one benzene ring, which can be a monocyclic aromatic hydrocarbon, a fused-ring aromatic hydrocarbon, or a polycyclic aromatic hydrocarbon. For polycyclic aromatic hydrocarbons, at least one ring is an aromatic ring system; for example, benzene, naphthalene, benzofuran, etc. "Aryl" refers to an aromatic hydrocarbon group derived from an aromatic ring by removing one hydrogen atom. For example, an aryl group with C6 to C30 refers to an aryl group containing 6 to 30 carbon atoms, preferably an aryl group with 6 to 18 carbon atoms, particularly preferably an aryl group with 6 to 14 carbon atoms, and optionally further substituted; suitable examples include, but are not limited to: phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthrene, fluoranyl, triphenylene, pyrene, perylene, tetraphenyl, fluorenyl, dinaphthylphenyl, acenaphthyl, and their derivatives. It is understandable that multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, and diaryl ether systems should also be included in the definition of aryl.

[0029] In this application, "heterocyclic" refers to an aromatic or aliphatic ring in which at least one carbon atom is replaced by a non-carbon atom (heteroatom). The non-carbon atom can be an N atom, O atom, S atom, etc. Examples include ethylene oxide, dioxane, furan ring, thiophene ring, pyrrole, and imidazole. "Heterocyclic group" refers to a group derived from a heterocyclic ring by removing one hydrogen atom. For example, a C3-C30 heterocyclic group refers to a heterocyclic group containing 3 to 30 carbon atoms, preferably a heterocyclic group having 5 to 30 ring atoms, more preferably a heterocyclic group having 5 to 18 ring atoms, and particularly preferably a heterocyclic group having 5 to 14 ring atoms. The heterocyclic group may optionally be further substituted, and suitable examples include, but are not limited to, cyclopentyl, cyclohexyl, adamantane, thiophene, furanyl, pyrroleyl, imidazoleyl, diazolyl, triazolyl, pyridyl, bipyridyl, pyrimidinyl, triazineyl, acridineyl, and pyridazinyl. Pyrazinyl, quinolinyl, isoquinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridinylpyrimidinyl, pyridinylpyrazinyl, benzothiopheneyl, benzofuranyl, indolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thienopyrrolyl, thienopyrrolyl, furanolyl, furanolyl, thienofuranyl, benzoisoxazolyl, benzoisothiazolyl, benzoimidazolyl, o-diazonyl, phenanthridine, primidyl, quinazolinone, dibenzothiopheneyl, dibenzofuranyl, carbazoleyl and their derivatives.

[0030] In this application, "alkyl" can mean straight-chain alkyl and / or branched alkyl. The number of carbon atoms in an alkyl group can be 1 to 20, 1 to 15, 1 to 10, or 1 to 6. Phrases containing this term, such as "C1 to C20 alkyl", refer to alkyl groups containing 1 to 20 carbon atoms, and each time it appears, it can independently be C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, C9 alkyl, C10 alkyl, C11 alkyl, C12 alkyl, C13 alkyl, C14 alkyl, C15 alkyl, C16 alkyl, C17 alkyl, C18 alkyl, C19 alkyl, or C20 alkyl. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, cyclopentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, cyclohexyl, 4-methylcyclohexyl, 4-tert-butylcyclohexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl, 3,7-dimethyloctyl, cyclooctyl, n-nonyl, n-decyl, adamantyl, 2-ethyldecyl, 2-butyl 2-Hexyldecyl, 2-Octylide, n-Undecyl, n-Dodecyl, 2-Ethyldodecyl, 2-Butyldodecyl, 2-Hexyldodecyl, 2-Octylide, n-Tridecyl, n-Tetradecyl, n-Pentadedecyl, n-Hexadecyl, 2-Ethylhexadecyl, 2-Butylhexadecyl, 2-Hexylhexadecyl, 2-Octylide, n-Heptadedecyl, n-Octadedecyl, n-Nondecyl, n-Eicosyl, 2-Ethyleicosyl, 2-Butyleicosyl, 2-Hexyleicosyl, 2-Octylide, n-Iconodecyl, n-Iconodecyl, n-Iconodecyl, n-Iconodecyl, n-Iconodecyl, n-Iconodecyl, n-Iconodecyl, n-Iconodecyl, n-Iconodecyl, n-Iconodecyl, n-Iconodecyl, n-Iconodecyl, n-Iconodecyl, n-Iconodecyl, n-Iconodecyl, n-Iconodecyl, n-Iconodecyl, etc.

[0031] In this application, "alkoxy" refers to a group with the structure "-O-alkyl", that is, an alkyl group as defined above that is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to: methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), and tert-butoxy (-OC(CH3)3 or -OtBu).

[0032] In this application, unless otherwise defined, hydroxyl group refers to -OH, halogen group refers to -F, -Cl, -Br or -I, carboxyl group refers to -COOH, sulfonic acid group refers to "-SO3H", mercapto group refers to -SH, cyano group refers to -C≡N, and nitro group refers to -NO2.

[0033] In this application, "amino group" refers to an amine derivative having the structural feature of the formula -N(X)2, wherein each "X" is independently H, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted heterocyclic group, etc. Non-limiting types of amino groups include -NH2, -N(alkyl)2, -NH(alkyl), -N(cycloalkyl)2, -NH(cycloalkyl), -N(heterocyclic)2, -NH(heterocyclic), -N(aryl)2, -NH(aryl), -N(alkyl)(aryl), -N(alkyl)(heterocyclic), -N(cycloalkyl)(heterocyclic), -N(aryl)(heteroaryl), -N(alkyl)(heteroaryl), etc.

[0034] The terms “combinations thereof,” “any combination thereof,” and “any combination thereof” as used in this application include all suitable combinations of any two or more of the listed items.

[0035] This application provides an optoelectronic device 100, which can be a quantum dot light-emitting diode or an organic light-emitting diode. Please refer to... Figure 1 The optoelectronic device 100 includes a stacked bottom electrode 10, a functional layer, and a top electrode 20; wherein the material of the functional layer includes at least one organic compound, the organic compound having a fused structure consisting of at least two rings and having at least one conjugated double bond.

[0036] The unique structure of the organic compound allows it to undergo a cycloaddition reaction under ultraviolet light irradiation, thereby consuming ultraviolet light. In the optoelectronic device 100 proposed in this application, the addition of an organic compound to the functional layer can consume ultraviolet light and protect other materials within the functional layer from ultraviolet light damage. The optoelectronic device 100 proposed in this application exhibits superior photostability.

[0037] In some embodiments, the organic compound may have the structure shown in formula (1) or (2):

[0038]

[0039] Among them, ring A and ring B are each independently selected from one or more combinations of substituted or unsubstituted C6-C30 aromatic rings and substituted or unsubstituted C3-C30 heterocycles; Z1, Z2, Z5, and Z6 are each independently selected from CR1 or N; Z3 and Z4 are each independently selected from CR2R3, O, S, or NR4.

[0040] Wherein, when ring A and ring B are each independently selected from one or more combinations of C6-C30 aromatic rings substituted with substituents and C3-C30 heterocycles substituted with substituents, each substituent is independently selected from one or more combinations of deuterium, halogen, hydroxyl, carboxyl, amino, nitro, sulfonic acid, mercapto, cyano, C1-C20 alkyl, C1-C20 alkoxy, C6-C30 aryl, and C3-C30 heterocyclic groups;

[0041] R1, R2, R3, and R4 are each independently selected from one or more combinations of deuterium, halogen, hydroxyl, carboxyl, amino, nitro, sulfonic acid, mercapto, cyano, C1-C20 alkyl, C1-C20 alkoxy, C6-C30 aryl, and C3-C30 heterocyclic groups.

[0042] Furthermore, in some embodiments, Z3 and Z4 are each independently selected from O; organic compounds based on this structure are prone to UV-induced cycloaddition reactions and have a good effect on consuming UV light.

[0043] In some embodiments, Z1, Z2, Z5, and Z6 are each independently selected from CR1.

[0044] In some embodiments, ring A and ring B are each independently selected from any one of substituted or unsubstituted benzene rings, substituted or unsubstituted naphthyl rings, substituted or unsubstituted anthracene rings, substituted or unsubstituted phenanthrene rings, substituted or unsubstituted benzofuran rings, substituted or unsubstituted benzopyrrole rings, substituted or unsubstituted benzothiophene rings, substituted or unsubstituted benzopyridine rings, and substituted or unsubstituted benzopyran rings.

[0045] In some embodiments, each substituent and R1 are independently selected from one or more combinations of deuterium, hydroxyl, carboxyl, amino, C1-C20 alkyl, and C1-C20 alkoxy.

[0046] In some specific embodiments, the organic compound may include, but is not limited to, benzopyran compounds, including one or more of 2H-benzopyran-3-carboxylic acid (CAS: 22649-28-1), 2H-1-benzopyran-3-carboxaldehyde (CAS: 51593-69-2), 6-hydroxybenzopyran-3-carboxaldehyde (CAS: 134822-76-7), 2-amine-3-carboxaldehyde-6,7-dimethylbenzopyranone (CAS: 94978-87-7), 2-methyl-2H-benzopyran-3-carboxaldehyde (CAS: 57543-42-7), and 4-methoxy-7-methyl-5H-furano[3,2-g]benzopyran-5-one (CAS: 82-57-5).

[0047] Furthermore, in some embodiments, the organic compound has one or more combinations of carboxyl, hydroxyl, and amino groups. This organic compound exhibits good electrical conductivity and, when used in the first composite film layer, helps ensure the electrical performance of the optoelectronic device 100. Based on this, the organic compound can be selected from one or more of 2H-benzopyran-3-carboxylic acid, 6-hydroxybenzopyran-3-carboxaldehyde, and 2-amine-3-carboxaldehyde-6,7-dimethylbenzopyranone. When the above compounds are selected, the optoelectronic device 100 not only prevents damage from ultraviolet light but also exhibits superior electrical performance.

[0048] It is understood that the optoelectronic device 100 can be an upright device or an inverted device.

[0049] In some embodiments, the bottom electrode 10 and the top electrode 20 are relative to the stacking order of the device film layers. The bottom electrode 10 is located below the top electrode 20. When fabricating the optoelectronic device 100, the bottom electrode 10 is deposited first, then the functional layer is fabricated, and finally the top electrode 20 is fabricated. The bottom electrode 10 is selected from one of the anode and the cathode, and the top electrode 20 is selected from the other. For example, it can be designed that the bottom electrode 10 is the anode and the top electrode 20 is the cathode, or it can be designed that the bottom electrode 10 is the cathode and the top electrode 20 is the anode.

[0050] The anode and cathode each independently include a doped metal oxide particle electrode, a metal-metal oxide composite electrode, a graphene electrode, a carbon nanotube electrode, or a metal electrode. The material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The metal-metal oxide composite electrode is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, etc. The electrode material can be selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg, and Ba, using the ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, or ZnS / Al / ZnS. The " / " indicates a stacked structure; for example, the composite electrode AZO / Ag / AZO represents a three-layered composite electrode consisting of an AZO layer, an Ag layer, and an AZO layer. The thickness of the anode can be 20–120 nm, and the thickness of the cathode can also be 20–120 nm.

[0051] The functional layer refers to a functional film layer located between the anode and the cathode. It can be a single film layer or a stack of multiple film layers. In some embodiments, the functional layer includes an active layer 30. The material of the active layer 30 may include organic light-emitting materials or quantum dots. Based on this, the active layer 30 can serve as a light-emitting layer, enabling the optoelectronic device 100 to emit light under photoexcitation or electroexcitation, thus exhibiting light-emitting properties.

[0052] The organic light-emitting material is a material known in the art for use in organic light-emitting layers, and may be selected from, but not limited to, at least one of diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives or fluorene derivatives, TBPe fluorescent material emitting blue light, TTPA fluorescent material emitting green light, TBRb fluorescent material emitting orange light, and DBP fluorescent material emitting red light.

[0053] The quantum dot is a quantum dot known in the art for use in quantum dot emitting layers, such as red quantum dots, green quantum dots, and blue quantum dots. The quantum dot can be selected from, but is not limited to, at least one of single-structure quantum dots, core-shell quantum dots, and perovskite semiconductor materials. The shell of the core-shell quantum dot comprises one or more layers. The material of the single-structure quantum dot, the core material of the core-shell quantum dot, and the shell material of the core-shell quantum dot respectively include at least one of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, and CdSTe. At least one of the following: ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds include SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, S At least one of nSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V compound includes at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, and GaAlNP. At least one of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the I-III-VI group compounds include at least one of CuInS2, CuInSe2, and AgInS2; the perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs. +Ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ At least one of them, where X is a halide anion selected from Cl. - ,Br - I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ At least one of them, where X is a halide anion selected from Cl. - ,Br - I - At least one of them.

[0054] As an example, the quantum dots of the core-shell structure can be selected from but not limited to at least one of CdZnSe / CdZnSe / ZnSe / CdZnS / ZnS, CdZnSe / CdZnSe / CdZnS / ZnS CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. It should be noted that for the materials of the aforementioned single-structure quantum dots, or the core materials of the core-shell structure quantum dots, or the shell materials of the core-shell structure quantum dots, the provided chemical formulas only indicate the elemental composition and do not indicate the content of each element. For example, CdZnSe only represents being composed of three elements, Cd, Zn, and Se. If the content of each element is to be represented, it would correspond to Cd x Zn 1-x Se, 0 < x < 1. It can be understood that the core material of the core-shell structure quantum dots and the materials of each shell layer are expressed by connecting with " / ", and the order from left to right is the material types of the quantum dots from the inside to the outside: core material / first shell layer material / Nth shell layer material, where N is an integer greater than or equal to 1. For example, CdSe / CdZnSeS / ZnS represents a core-shell structure quantum dot with two shell layers, whose core material is CdSe, the material of the first shell layer coated on the core is CdZnSeS, and the material of the second shell layer coated outside the first shell layer is ZnS.

[0055] The thickness of the active layer 30 can be 8 nm to 50 nm; for example, it can be 8 nm, 10 nm, 15 nm, 20 nm, 30 nm, 40 nm, 50 nm, and the ranges between any two of the above values.

[0056] In addition to the active layer 30, the functional layer may further include a carrier transport film layer based on an N-type semiconductor material or a P-type semiconductor material to promote the transport or injection of carriers. When an organic compound is doped in the carrier transport film layer or formed on one side of the carrier transport film layer, it can play a role in protecting the material of the carrier transport film layer. The distribution manner of the organic compound in the functional layer will be described below in combination with two carrier transport film layers.

[0057] For example, in some embodiments, the functional layer further includes a first composite film layer located between the active layer 30 and the top electrode 20. The material of the first composite film layer includes a first semiconductor material and a first compound, wherein the first semiconductor material is selected from one of the commonly used N-type semiconductors and P-type semiconductors in the art, and the first compound is selected from at least one of the organic compounds. It can be understood that when the top electrode 20 is the anode, the first semiconductor material is selected from the P-type semiconductor. Correspondingly, the optoelectronic device 100 includes a cathode, an active layer 30, a first composite film layer (material including P-type semiconductor and organic compound), and an anode stacked sequentially. Because the first composite film layer contains a P-type semiconductor, it promotes hole transport or injection. Simultaneously, because the first composite film layer contains an organic compound, it not only provides ultraviolet protection for the P-type semiconductor it contains but also protects the materials of other film layers located on the backlight side of the first composite film layer, preventing damage from external ultraviolet light. It can be understood that the backlight side refers to the side of the first composite film layer that is away from ultraviolet light. Furthermore, in this embodiment, other films can be disposed between the bottom electrode 10 and the active layer 30. These other films can be prepared using N-type semiconductors commonly used in the art, and have the function of promoting electron transport or injection. Conversely, when the top electrode 20 is a cathode, the first semiconductor material is selected from N-type semiconductors. Accordingly, the optoelectronic device 100 includes an anode, an active layer 30, a first composite film layer (the material includes N-type semiconductors and organic compounds), and a cathode stacked sequentially. Since the first composite film layer contains N-type semiconductors, it has the function of promoting electron transport or injection. At the same time, since the first composite film layer contains organic compounds, it can not only provide ultraviolet protection for the N-type semiconductors it contains, but also protect the materials of other films located on the backlight side of the first composite film layer, preventing damage to the film materials by external ultraviolet light. In this embodiment, other films can also be disposed between the bottom electrode 10 and the active layer 30. These other films can be prepared using P-type semiconductors commonly used in the art, and have the function of promoting hole transport or injection.

[0058] It is understood that in practical applications, the ultraviolet light received by the optoelectronic device 100 may originate from external ultraviolet irradiation. For example, during the fabrication of the optoelectronic device 100, ultraviolet irradiation is required to promote the curing of the encapsulating adhesive during device encapsulation. Furthermore, the ultraviolet light may also originate from the active layer 30 of the optoelectronic device 100. In some embodiments, the emission wavelength of the light emitted by the active layer 30 is in the range of 450–475 nm. This light belongs to the shorter wavelength blue or violet light category, which is destructive to semiconductor materials such as metal oxides. In the optoelectronic device 100 proposed in this application embodiment, the first composite film layer can not only protect against external ultraviolet light but also protect against the blue-violet light emitted by the active layer 30, protecting the device materials, improving the stability of the optoelectronic device 100 during use, and further extending the device's lifespan.

[0059] For example, in some embodiments, the functional layer further includes a second composite film layer located between the active layer 30 and the bottom electrode 10. The material of the second composite film layer includes a second semiconductor material and a second compound, wherein the second semiconductor material is selected from N-type semiconductors and P-type semiconductors, and the second compound is selected from at least one of the organic compounds. It can be understood that when the top electrode 20 is the anode, the second semiconductor material is selected from N-type semiconductors. Correspondingly, the optoelectronic device 100 includes a cathode, a second composite film layer (material including N-type semiconductors and organic compounds), an active layer 30, and an anode stacked sequentially. The second composite film layer promotes electron transport or injection. Simultaneously, because the second composite film layer contains organic compounds, it can provide ultraviolet protection for the N-type semiconductor it contains, preventing damage from ultraviolet light from the outside environment and the active layer 30. Further, in this embodiment, other film layers can also be disposed between the top electrode 20 and the active layer 30. These other film layers can be prepared using P-type semiconductors commonly used in the art, and have the function of promoting hole transport or injection. Conversely, when the top electrode 20 is the cathode, the second semiconductor material is selected from P-type semiconductors. Accordingly, the optoelectronic device 100 includes an anode, a second composite film layer (material including P-type semiconductors and organic compounds), an active layer 30, and a cathode stacked sequentially. The second composite film layer promotes hole transport or injection. At the same time, since the second composite film layer contains organic compounds, it can provide ultraviolet protection for the P-type semiconductor it contains. In this embodiment, other film layers can also be disposed between the top electrode 20 and the active layer 30. These other film layers can be prepared using N-type semiconductors commonly used in the art and have the function of promoting electron transport or injection.

[0060] For example, in some embodiments, the functional layer includes both a first composite film layer and a second composite film layer. That is, the optoelectronic device 100 includes a bottom electrode 10, a second composite film layer, an active layer 30, a first composite film layer, and a top electrode 20 stacked sequentially. It is understood that in the first and second composite film layers, the first semiconductor material is selected from either an N-type semiconductor or a P-type semiconductor, and the second semiconductor material is selected from either the N-type semiconductor or the P-type semiconductor. Furthermore, the first and second compounds can be the same or different. The arrangement of the first and second composite film layers effectively dissipates ultraviolet light, protecting the N-type and P-type semiconductors from damage by ultraviolet light. Especially when the emission wavelength of the light emitted from the active layer 30 is between 450 and 475 nm, the dual composite film layer design can protect against damage from short-wavelength light from the active layer 30.

[0061] The N-type semiconductor mentioned in this application refers to semiconductor materials commonly used in the art that possess electron transport properties. The N-type semiconductor may include one or more of undoped metal oxides, doped metal oxides, group IIA-VIA semiconductor materials, group IIIA-VA semiconductor materials, and group IB-IIIA-VIA semiconductor materials. Specifically, the undoped metal oxide may include, but is not limited to, one or more of ZnO, SnO2, and TiO2. The doped metal oxide is an oxide doped with a dopant element, which may include, but is not limited to, one or more of ZnO, SnO2, and TiO2. The dopant element may include, but is not limited to, one or more of Al, Mg, Li, In, and Ga. The molar percentage of the dopant element in the doped metal oxide is 0.01% to 20%; for example, it may be 0.01%, 0.5%, 1%, 2%, 5%, 8%, 10%, 15%, 20%, or any two of the above values. The group IIA-VIA semiconductor materials include at least one of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include at least one of InP and GaP. The IB-IIIA-VIA group semiconductor materials include at least one of CuInS and CuGaS.

[0062] The P-type semiconductor mentioned in this application refers to hole transport materials with hole transport properties or hole injection materials with hole injection properties, which are commonly used in the art. The hole transport materials may include, but are not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))](TFB), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), and N,N'-diphenyl -N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4”-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m -MTDATA), poly(p-)phenylenevinylene (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MOMO-PPV), 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS, poly(N-vinylcarbazole) (PVK), polymethacrylate, poly(9,9-octylfluorene), N,N'-di(naphthyl-1-yl)-N,N'-diphenylbenzidine (NPB), spiroNPB, doped graphene, undoped graphene, and one or more transition metal oxides, wherein the transition metal oxides include one or more of NiO, MoO2, WO3, and CuO. The hole injection material may include, but is not limited to, one or more of poly(3,4-ethylenedioxythiophene) (PEDOT), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid (PEDOT:PSS), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethylethane (F4-TCNQ), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (HATCN), copper polyester carbonate (CuPc), transition metal oxides, and metal chalcogenides; wherein the transition metal oxides include one or more of NiO, MoO2, WO3, and CuO; and the metal chalcogenides include one or more of MoS2, MoSe2, WS3, WSe3, and CuS.

[0063] Furthermore, the first composite membrane layer can be a single-layer structure or a stacked structure formed by multiple membrane layers, and the second composite membrane layer can also be a single-layer structure or a stacked structure. For ease of description, when the first composite membrane layer is a single-layer structure, it is defined as the first single-layer membrane 41, and when it is a stacked structure, it is defined as the first stacked structure; when the second composite membrane layer is a single-layer structure, it is defined as the second single-layer membrane 51, and when it is a stacked structure, it is defined as the second stacked structure.

[0064] In some embodiments, the first composite film layer is a first monolayer film 41, and the material of the first monolayer film 41 includes a mixture of the first semiconductor material and the first compound. The first compound is incorporated into the first monolayer film 41 in a doping form and is uniformly dispersed with the first semiconductor material, which can play a role in preventing ultraviolet damage.

[0065] In the first monolayer film 41, the mass ratio of the first compound to the first semiconductor material is 1:5 to 10; for example, it can be 1:5, 1:6, 1:7, 1:8, 1:9, 1:10, or any two of the above values. Controlling the doping amount of the first compound within this range can better prevent ultraviolet damage while further reducing the impact on the electrical properties of the film.

[0066] The thickness of the first monolayer film 41 can be 20 to 60 nm, for example, it can be 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, or any value between any two of the above.

[0067] In some embodiments, the first composite film layer is a first stack, which includes a stacked protective layer and a first carrier functional layer 43. The protective layer includes a first protective layer 42 and / or a second protective layer 45. The materials of the first protective layer 42 and the second protective layer 45 are each independently selected from the first compound, and the material of the first carrier functional layer 43 is selected from the first semiconductor material. The first protective layer 42 is disposed on the side of the first carrier functional layer 43 facing the active layer 30. That is, the optoelectronic device 100 includes a bottom electrode 10, an active layer 30, a first protective layer 42, a first carrier functional layer 43, and a top electrode 20 stacked sequentially. The first protective layer 42 can protect the first carrier functional layer 43 from damage by ultraviolet light from the active layer 30, improve the stability of the optoelectronic device 100 during operation, and extend the device's lifespan. The second protective layer 45 is disposed on the side of the first carrier functional layer 43 facing the top electrode 20. That is, the optoelectronic device 100 includes a bottom electrode 10, an active layer 30, a first carrier functional layer 43, a second protective layer 45, and a top electrode 20 stacked sequentially. The second protective layer 45 protects the first carrier functional layer 43 from damage by external ultraviolet light, reducing light damage to the optoelectronic device 100 during fabrication and improving its luminescence performance and lifetime. The protective layer helps protect the film material of the device, reducing light damage. Simultaneously, it prevents adverse effects on the film formation effect and electrical performance of the first semiconductor material due to organic compound doping. When the first stack includes both the first protective layer 42 and the second protective layer 45, the first carrier functional layer 43 receives excellent protection.

[0068] The thickness of the first protective layer 42 can be 5–10 nm; for example, it can be 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or any two of the above values. Controlling it within this range can improve the carrier transport performance of the device while better achieving the protective effect.

[0069] The thickness of the second protective layer 45 is 5–10 nm; for example, it can be 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or any two of the above values. Controlling it within this range can improve the carrier transport performance of the device while better achieving the protective effect.

[0070] The thickness of the first carrier functional layer 43 is 20-60 nm, for example, it can be 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, or any value between any two of the above.

[0071] Furthermore, when the first composite film layer is a first stack, the first stack may further include a first transition layer 44 and / or a second transition layer 46.

[0072] The first transition layer 44 is located between the first protective layer 42 and the first carrier functional layer 43. The material of the first transition layer 44 includes a mixture of the first semiconductor material and the first compound. By setting a mixed film layer of the first semiconductor material and the first compound between the first protective layer 42 and the first carrier functional layer 43, it can not only provide UV protection, but also play a role in energy level transition between the first protective layer 42 and the first carrier functional layer 43, reducing the interlayer transport barrier, making the transport of carriers smoother, and reducing carrier loss.

[0073] In the first transition layer 44, the mass ratio of the first compound to the first semiconductor material is 1:5 to 10; for example, it can be 1:5, 1:6, 1:7, 1:8, 1:9, 1:10, or any two of the above values. By controlling the doping amount of the first compound within this range, the function of the first transition layer 44 can be better utilized while further reducing the impact on the electrical properties of the film.

[0074] The thickness of the first transition layer 44 is 5–10 nm; for example, it can be 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or any two of the above values. By controlling it within this range, the carrier transport performance of the device can be improved while better utilizing the function of the first transition layer 44.

[0075] The second transition layer 46 is located between the second protective layer 45 and the first carrier functional layer 43. The material of the second transition layer 46 includes a mixture of the first semiconductor material and the first compound. By providing a mixed film layer of the first semiconductor material and the first compound between the second protective layer 45 and the first carrier functional layer 43, it can play the role of energy level transition between the second protective layer 45 and the first carrier functional layer 43, reduce the interlayer transport barrier, make the transport of carriers smoother, and reduce carrier loss.

[0076] In the second transition layer 46, the mass ratio of the first compound to the first semiconductor material is 1:5 to 10; for example, it can be 1:5, 1:6, 1:7, 1:8, 1:9, 1:10, or any two of the above values. By controlling the doping amount of the first compound within this range, the function of the second transition layer 46 can be better utilized while further reducing the impact on the electrical properties of the film.

[0077] The thickness of the second transition layer 46 is 5–10 nm; for example, it can be 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or any two of the above values. By controlling it within this range, the carrier transport performance of the device can be improved while better utilizing the function of the second transition layer 46.

[0078] In some embodiments, the second composite film layer is a second monolayer film 51, and the material of the second monolayer film 51 includes a mixture of the second semiconductor material and the second compound. The second compound is incorporated into the second monolayer film 51 in a doping form and is uniformly dispersed with the second semiconductor material, which can play a role in preventing ultraviolet damage.

[0079] In the second monolayer film 51, the mass ratio of the second compound to the second semiconductor material is 1:5 to 10; for example, it can be 1:5, 1:6, 1:7, 1:8, 1:9, 1:10, or any two of the above values. By controlling the doping amount of the first compound within this range, the impact on the electrical properties of the film can be further reduced while protecting against UV damage.

[0080] The thickness of the second monolayer film 51 can be 20 to 60 nm, for example, it can be 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, or any value between any two of the above.

[0081] In some embodiments, the second composite film layer is a second stack, which includes a stacked third protective layer 52 and a second charge carrier functional layer 53. The material of the third protective layer 52 is selected from the second compound, and the material of the second charge carrier functional layer 53 is selected from the second semiconductor material. The third protective layer 52 is disposed between the second charge carrier functional layer 53 and the active layer 30. That is, the optoelectronic device 100 includes a bottom electrode 10, a second charge carrier functional layer 53, a third protective layer 52, an active layer 30, and a top electrode 20 stacked sequentially. The third protective layer 52 can protect the second charge carrier functional layer 53, further reducing its damage from the active layer 30 and external ultraviolet light.

[0082] The thickness of the third protective layer 52 is 5–10 nm; for example, it can be 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or any two of the above values. Controlling it within this range can better exert the protective effect and improve the carrier transport performance of the device.

[0083] The thickness of the second carrier functional layer 53 is 20-60 nm, for example, it can be 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, or any value between the two mentioned above.

[0084] Furthermore, when the second composite film layer is a second stack, the second stack may also include a third transition layer 54. The third transition layer 54 is located between the third protective layer 52 and the second charge carrier functional layer 53, and the material of the third transition layer 54 includes the second semiconductor material and the second compound. By setting a mixed film layer of the second semiconductor material and the second compound between the third protective layer 52 and the second charge carrier functional layer 53, it can not only provide UV protection, but also serve as an energy level transition between the third protective layer 52 and the second charge carrier functional layer 53, reducing the interlayer transport barrier, making the transport of charge carriers smoother, and reducing the loss of charge carriers.

[0085] In the third transition layer 54, the mass ratio of the second compound to the second semiconductor material is 1:5 to 10; for example, it can be 1:5, 1:6, 1:7, 1:8, 1:9, 1:10, or any two of the above values. By controlling the doping amount of the second compound within this range, the function of the third transition layer 54 can be better utilized while further reducing the impact on the electrical properties of the film.

[0086] The thickness of the third transition layer 54 is 5–10 nm; for example, it can be 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or any two of the above values. Controlling it within this range can better utilize the function of the third transition layer 54 while improving the carrier transport performance of the device.

[0087] It is understood that the optoelectronic device 100 may also be provided with some functional layers that are conventionally used in optoelectronic devices 100 and help to improve device performance, such as electron blocking layer, hole blocking layer, interface modification layer, etc.

[0088] It is understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the optoelectronic requirements of the optoelectronic device 100.

[0089] Furthermore, this application also proposes a method for fabricating an optoelectronic device 100, which can produce the aforementioned optoelectronic device 100. In some embodiments, the fabrication method includes: providing a bottom electrode 10; depositing a functional layer material on the bottom electrode 10 to obtain a functional layer; and fabricating a top electrode 20 on the side of the functional layer opposite to the bottom electrode 10. The functional layer material comprises at least one organic compound, the organic compound having a fused structure consisting of at least two rings and having at least one conjugated double bond.

[0090] The specific structures and types of the organic compounds can be found above and will not be repeated here.

[0091] Further, the fabrication of the functional layer includes: sequentially fabricating multiple film layers according to a preset film layer order to obtain the functional layer. The preset film layer order refers to the stacking order of the multiple film layers contained in the functional layer of the intended optoelectronic device 100. For example, the preset film layer order may include, but is not limited to, the order in the following specific embodiments:

[0092] For example, please see Figure 1 In the first embodiment, the preset film layer order is that the active layer 30 and the first monolayer film 41 are stacked in sequence.

[0093] For example, please see Figure 2 In the second embodiment, the preset film layer order is that the active layer 30, the first protective layer 42, and the first carrier functional layer 43 are stacked in sequence.

[0094] For example, please see Figure 3 In the third embodiment, the preset film layer order is as follows: active layer 30, first carrier functional layer 43, and second protective layer 45 are stacked in sequence.

[0095] For example, please see Figure 4 In the fourth embodiment, the preset film layer sequence is as follows: active layer 30, first protective layer 42, first transition layer 44, first carrier functional layer 43, second transition layer 46, and second protective layer 45 are stacked in sequence.

[0096] For example, please see Figure 5 In the fifth embodiment, the preset film layer sequence is as follows: the second monolayer film 51, the active layer 30, and the first monolayer film 41 are stacked in sequence.

[0097] For example, please see Figure 6 In the sixth embodiment, the preset membrane layer sequence is as follows: second monolayer membrane 51, active layer 30, first protective layer 42, first carrier functional layer 43, and second protective layer 45 are stacked in sequence.

[0098] For example, please see Figure 7 In the seventh embodiment, the preset film layer sequence is as follows: second carrier functional layer 53, third protective layer 52, active layer 30, first protective layer 42, first carrier functional layer 43, and second protective layer 45 are stacked in sequence.

[0099] For example, please see Figure 8 In the eighth embodiment, the preset film layer sequence is as follows: second carrier functional layer 53, third transition layer 54, third protective layer 52, active layer 30, first protective layer 42, first transition layer 44, first carrier functional layer 43, second transition layer 46, and second protective layer 45 are stacked in sequence.

[0100] When organic compounds are distributed in the film layer in the form of doping or mixing, such as the first monolayer film 41, the second monolayer film 51, the first transition layer 44, the second transition layer 46, and the third transition layer 54, the film layer is prepared by mixing the organic compound, the corresponding semiconductor material, and the corresponding solvent to form a mixed solution, depositing the mixed solution, and then annealing to obtain the film layer.

[0101] When an organic compound is formed into an interfacial film, such as a first protective layer 42, a second protective layer 45, and a third protective layer 52, the preparation method of this interfacial film is as follows: the organic compound is dispersed in a suitable solvent to form a mixed solution, the mixed solution is deposited, and then annealed to obtain the interfacial film. Specifically:

[0102] The material of the first monolayer film 41 includes a mixture of the first semiconductor material and the first compound. Accordingly, the preparation of the first monolayer film 41 includes: providing the first compound, the first semiconductor material, and the first solvent; mixing the first compound, the first semiconductor material, and the first solvent to obtain a first mixed solution; depositing the first mixed solution; and then performing a first annealing to obtain the first monolayer film 41.

[0103] The first solvent is adjusted according to the type of the first semiconductor material. When the first semiconductor material is an N-type semiconductor, the first solvent includes one or more of dimethyl sulfoxide (DMSO), dimethylacetamide (DMF), and alcohol solvents, such as at least one of dimethyl sulfoxide (DMSO), dimethylacetamide (DMF), methanol, ethanol, isopropanol, and n-butanol. In some embodiments, the solvent may be DMSO, or DMF, or a mixture of DMSO and ethanol (volume ratio of 10:1). When the first semiconductor material is a P-type semiconductor, the first solvent may include at least one of dimethyl sulfoxide (DMSO), dimethylacetamide (DMF), chlorobenzene, toluene, and xylene. In some embodiments, the solvent may be DMSO, or DMF, or a mixture of chlorobenzene and DMSO (volume ratio of 10:1).

[0104] In the first mixed solution, the concentration of the first semiconductor material is 10-60 mg / mL, and the mass ratio of the first compound to the first semiconductor material is 1:5-10.

[0105] The temperature for the first annealing is 80 to 150°C, for example, it can be 80°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, or any two of the above values.

[0106] The first annealing time is 5 to 10 minutes; for example, it can be 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, 10 minutes, or any two of the above values.

[0107] The material of the second monolayer film 51 includes a mixture of the second semiconductor material and the second compound. Accordingly, the preparation of the second monolayer film 51 includes: providing the second compound, the second semiconductor material, and the second solvent; mixing the second compound, the second semiconductor material, and the second solvent to obtain a second mixed solution; depositing the second mixed solution; and then performing a second annealing to obtain the second monolayer film 51.

[0108] The second solvent is adjusted according to the type of the second semiconductor material. When the second semiconductor material is an N-type semiconductor, the second solvent includes at least one of DMSO, DMF, and alcohol solvents, such as at least one of DMSO, DMF, methanol, ethanol, isopropanol, and n-butanol. In some embodiments, the solvent may be DMSO, DMF, or a mixture of DMSO and ethanol (volume ratio of 10:1). When the second semiconductor material is a P-type semiconductor, the first solvent may include at least one of DMSO, DMF, chlorobenzene, toluene, and xylene. In some embodiments, the solvent may be DMSO, DMF, or a mixture of chlorobenzene and DMSO (volume ratio of 10:1).

[0109] In the second mixed solution, the concentration of the second semiconductor material is 10-60 mg / mL, and the mass ratio of the second compound to the second semiconductor material is 1:5-10.

[0110] The temperature for the second annealing is 80 to 150°C, for example, it can be 80°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, or any two of the above values.

[0111] The second annealing time is 5 to 10 minutes; for example, it can be 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, 10 minutes, or any two of the above values.

[0112] The materials of the first transition layer 44 and the second transition layer 46 each independently comprise a mixture of the first semiconductor material and the first compound. Accordingly, the preparation of the first transition layer 44 and the second transition layer 46 can be performed as follows: providing a first compound, a first semiconductor material, and a third solvent; mixing the first compound, the first semiconductor material, and the third solvent to obtain a third mixed solution; depositing the third mixed solution; and then performing a third annealing to obtain the first transition layer 44 or the second transition layer 46.

[0113] The third solvent is adjusted according to the type of the first semiconductor material. When the first semiconductor material is an N-type semiconductor, the third solvent includes at least one of DMSO, DMF, and alcohol solvents, such as at least one of DMSO, DMF, methanol, ethanol, isopropanol, and n-butanol. In some embodiments, the solvent may be DMSO, DMF, or a mixture of DMSO and ethanol (volume ratio of 10:1). When the first semiconductor material is a P-type semiconductor, the third solvent may include at least one of DMSO, DMF, chlorobenzene, toluene, and xylene. In some embodiments, the solvent may be DMSO, DMF, or a mixture of chlorobenzene and DMSO (volume ratio of 10:1). It should be noted that the third solvent used in preparing the first transition layer 44 and the second transition layer 46 may be the same or different.

[0114] In the third mixed solution, the concentration of the first semiconductor material is 10-60 mg / mL, and the mass ratio of the first compound to the first semiconductor material is 1:5-10.

[0115] The temperature for the third annealing is 80 to 150°C, for example, it can be 80°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, or any two of the above values.

[0116] The third annealing time is 5 to 10 minutes; for example, it can be 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, 10 minutes, or any two of the above values.

[0117] The material of the third transition layer 54 includes a mixture of the second semiconductor material and the second compound. Accordingly, the preparation of the third transition layer 54 includes: providing the second compound, the second semiconductor material, and the fourth solvent; mixing the second compound, the second semiconductor material, and the fourth solvent to obtain a fourth mixed solution; depositing the fourth mixed solution; and then performing a fourth annealing to obtain the third transition layer 54.

[0118] The fourth solvent is adjusted according to the type of the second semiconductor material. When the second semiconductor material is an N-type semiconductor, the fourth solvent includes at least one of DMSO, DMF, and alcohol solvents, such as at least one of DMSO, DMF, methanol, ethanol, isopropanol, and n-butanol. In some embodiments, the solvent may be DMSO, DMF, or a mixture of DMSO and ethanol (volume ratio of 10:1). When the second semiconductor material is a P-type semiconductor, the fourth solvent may include at least one of DMSO, DMF, chlorobenzene, toluene, and xylene. In some embodiments, the solvent may be DMSO, DMF, or a mixture of chlorobenzene and DMSO (volume ratio of 10:1).

[0119] In the fourth mixed solution, the concentration of the second semiconductor material is 10-60 mg / mL, and the mass ratio of the second compound to the second semiconductor material is 1:5-10.

[0120] The temperature for the fourth annealing is 80 to 150°C, for example, it can be 80°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, or any two of the above values.

[0121] The fourth annealing time is 5 to 10 minutes; for example, it can be 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, 10 minutes, or any two of the above values.

[0122] The materials of the first protective layer 42 and the second protective layer 45 each independently comprise the first compound. Accordingly, the preparation of the first protective layer 42 or the second protective layer 45 can be carried out as follows: the first compound is dispersed in a fifth solvent to obtain a fifth mixed solution; the fifth mixed solution is deposited, and then a fifth annealing is performed to obtain the first protective layer 42 or the second protective layer 45.

[0123] It is understandable that the first compound used in preparing the first protective layer 42 and the second protective layer 45 may be the same or different.

[0124] The fifth solvent may include, but is not limited to, one or more of DMSO, DMF, and alcohol solvents. In some embodiments, the solvent may be DMSO, or DMF, or a mixture of DMSO and ethanol (volume ratio of 10:1).

[0125] In the fifth mixed solution, the concentration of the first compound can be 5 to 10 mg / mL, for example, 5 mg / mL, 6 mg / mL, 7 mg / mL, 8 mg / mL, 9 mg / mL, 10 mg / mL, or any two of the above values.

[0126] The temperature for the fifth annealing is 80 to 150°C, for example, it can be 80°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, or any two of the above values.

[0127] The fifth annealing time is 5 to 10 minutes; for example, it can be 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, 10 minutes, or any two of the above values.

[0128] The material of the third protective layer 52 includes the second compound. Accordingly, the preparation of the third protective layer 52 includes: dispersing the second compound in a sixth solvent to obtain a sixth mixed solution; depositing the sixth mixed solution, and then performing a sixth annealing to obtain the third protective layer 52.

[0129] The sixth solvent may include, but is not limited to, one or more of DMSO, DMF, and alcohol solvents. In some embodiments, the solvent may be DMSO, or DMF, or a mixture of DMSO and ethanol (volume ratio of 10:1).

[0130] In the sixth mixed solution, the concentration of the second compound can be 5 to 10 mg / mL, for example, 5 mg / mL, 6 mg / mL, 7 mg / mL, 8 mg / mL, 9 mg / mL, 10 mg / mL, or any two of the above values.

[0131] The temperature for the sixth annealing is 80 to 150°C, for example, it can be 80°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, or any two of the above values.

[0132] The sixth annealing time is 5 to 10 minutes; for example, it can be 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, 10 minutes, or any two of the above values.

[0133] The material of the first carrier functional layer 43 includes a first semiconductor material. The preparation of the first carrier functional layer 43 may include: dispersing the first semiconductor material in a seventh solvent to obtain a seventh mixed solution; depositing the seventh mixed solution and then performing a seventh annealing to obtain the first carrier functional layer 43.

[0134] The seventh solvent can be adjusted according to the type of the first semiconductor material. When the first semiconductor material is an N-type semiconductor, the seventh solvent includes at least one of DMSO, DMF, and alcohol solvents, such as at least one of DMSO, DMF, methanol, ethanol, isopropanol, and n-butanol. In some embodiments, the solvent can be DMSO, or DMF, or a mixture of DMSO and ethanol (volume ratio of 10:1). When the first semiconductor material is a P-type semiconductor, the seventh solvent can include at least one of DMSO, DMF, chlorobenzene, toluene, and xylene. In some embodiments, the solvent can be DMSO, or DMF, or a mixture of chlorobenzene and DMSO (volume ratio of 10:1).

[0135] In the seventh mixed solution, the concentration of the first semiconductor material can be 10 to 60 mg / mL, for example, 10 mg / mL, 20 mg / mL, 30 mg / mL, 40 mg / mL, 50 mg / mL, 60 mg / mL, and any two of the above values.

[0136] The temperature for the seventh annealing is 80 to 150°C, for example, it can be 80°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, or any two of the above values.

[0137] The seventh annealing time is 5 to 10 minutes; for example, it can be 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, 10 minutes, or any two of the above values.

[0138] The material of the second carrier functional layer 53 includes a second semiconductor material. The preparation of the second carrier functional layer 53 may include: dispersing the second semiconductor material in an eighth solvent to obtain an eighth mixed solution; depositing the eighth mixed solution and then performing an eighth annealing to obtain the second carrier functional layer 53.

[0139] The eighth solvent can be adjusted according to the type of the second semiconductor material. When the second semiconductor material is an N-type semiconductor, the eighth solvent includes at least one of DMSO, DMF, and alcohol solvents, such as at least one of DMSO, DMF, methanol, ethanol, isopropanol, and n-butanol. In some embodiments, the solvent can be DMSO, or DMF, or a mixture of DMSO and ethanol (volume ratio of 10:1). When the second semiconductor material is a P-type semiconductor, the eighth solvent can include at least one of DMSO, DMF, chlorobenzene, toluene, and xylene. In some embodiments, the solvent can be DMSO, or DMF, or a mixture of chlorobenzene and DMSO (volume ratio of 10:1).

[0140] In the eighth mixed solution, the concentration of the second semiconductor material can be 10 to 60 mg / mL, for example, 10 mg / mL, 20 mg / mL, 30 mg / mL, 40 mg / mL, 50 mg / mL, 60 mg / mL, and any two of the above values.

[0141] The temperature for the eighth annealing is 80 to 150°C, for example, it can be 80°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, or any two of the above values.

[0142] The eighth annealing time is 5 to 10 minutes; for example, it can be 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, 10 minutes, or any two of the above values.

[0143] In addition, the methods for forming the active layer 30 and other films can be chemical or physical methods. Chemical methods can include chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods can include physical deposition or solution processing. Physical deposition methods include thermal evaporation deposition (CVD), electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition (PVD), atomic layer deposition, and pulsed laser deposition. Solution processing methods include spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spraying, roller coating, casting, slot coating, and strip coating. Those skilled in the art can prepare the various films of the optoelectronic device 100 of this application embodiment according to the known methods for preparing optoelectronic devices 100, which will not be elaborated here.

[0144] Thirdly, this application also relates to a display device, which includes the optoelectronic device 100 provided in this application. The display device can be any electronic product with display function, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0145] The present application will be specifically described below through specific embodiments. These embodiments are only some embodiments of the present application and are not intended to limit the present application. Unless otherwise specified, the raw materials used in the following embodiments are all commercially available products.

[0146] Example 1

[0147] This embodiment provides a QLED device with a structure of ITO (80nm) / PEDOT:PSS (25nm) / TFB (25nm) / QD (25nm) / first composite film layer (25nm, ZMO+2H-benzopyran-3-carboxylic acid) / Ag (100nm). The preparation method is as follows:

[0148] Step S1: Spin-coat an aqueous solution of PEDOT:PSS onto the ITO surface, and then heat it on a 150°C heating plate for 10 min to obtain a hole injection layer with a thickness of 25 nm.

[0149] Step S2: Spin-coat a chlorobenzene solution of TFB (concentration of 8 mg / mL) onto the hole injection layer, and then heat it on a 150°C heating plate for 10 min to obtain a hole transport layer with a thickness of 25 nm.

[0150] Step S3: Spin-coat a solution of quantum dots (concentration of 30 mg / mL) in n-octane onto the hole transport layer, and then heat it on an 80°C heating plate for 5 min to obtain an active layer with a thickness of 25 nm; wherein the quantum dots are CdZnSe and the emission wavelength is 468 nm.

[0151] Step S4: Weigh the organic compound (2H-benzopyran-3-carboxylic acid) and ZMO in a mass ratio of 1:6, disperse them in DMSO, and obtain a mixed solution with a ZMO concentration of 30 mg / mL.

[0152] The mixed solution was spin-coated onto the active layer and then heated on a 100°C heating plate for 5 minutes to obtain a first composite film with a thickness of 30 nm.

[0153] Step S5: Through thermal evaporation, the vacuum level is not higher than 3×10⁻⁶. -4 Pa, Ag is deposited on the first composite film layer at a rate of [value missing]. A 100nm thick quantum dot light-emitting diode is encapsulated to obtain an upright quantum dot light-emitting diode.

[0154] Example 2

[0155] The scheme in this embodiment is basically the same as that in embodiment 1, except that the device structure in this embodiment is ITO (80nm) / PEDOT:PSS (25nm) / TFB (25nm) / QD (25nm) / first carrier functional layer (25nm, ZMO) / second protective layer (5nm, 2H-benzopyran-3-carboxylic acid) / Ag (100nm). Accordingly, step S4 is changed to:

[0156] An ethanol solution of ZMO (concentration of 30 mg / mL) was spin-coated onto the active layer, and then heated on an 80°C heating plate for 30 min to obtain a first carrier functional layer with a thickness of 25 nm.

[0157] An organic compound (2H-benzopyran-3-carboxylic acid) was dispersed in DMSO to obtain an organic compound solution with a concentration of 5 mg / mL. The organic compound solution was spin-coated onto the first carrier functional layer, and then heated on a hot plate at 100°C for 5 min to obtain a second protective layer with a thickness of 5 nm. The surface of the second protective layer was used to form an Ag layer in step S5.

[0158] Example 3

[0159] The scheme in this embodiment is basically the same as that in embodiment 2, except that the device structure in this embodiment is ITO (80nm) / PEDOT: PSS (25nm) / TFB (25nm) / QD (25nm) / first carrier functional layer (20nm, ZMO) / second transition layer (5nm, 2H-benzopyran-3-carboxylic acid + ZMO) / second protective layer (5nm, 2H-benzopyran-3-carboxylic acid) / Ag (100nm). Accordingly, step S4 is changed to:

[0160] Referring to the method in Example 2, a first carrier functional layer is prepared on the active layer;

[0161] The organic compound (2H-benzopyran-3-carboxylic acid) and ZMO were weighed at a mass ratio of 1:6 and dispersed in DMSO to obtain a mixed solution with a ZMO concentration of 30 mg / mL. The mixed solution was spin-coated onto the first carrier functional layer and then heated on a 100°C hot plate for 5 min to obtain a second transition layer with a thickness of 5 nm.

[0162] Referring to the method of Example 2, a second protective layer is prepared on the second transition layer. The surface of the second protective layer is used to form an Ag layer in step S5.

[0163] Example 4

[0164] The scheme in this embodiment is basically the same as that in embodiment 2, except that the device structure in this embodiment is ITO (80nm) / PEDOT:PSS (25nm) / TFB (25nm) / QD (25nm) / first protective layer (5nm, 2H-benzopyran-3-carboxylic acid) / first carrier functional layer (25nm, ZMO) / Ag (100nm). Accordingly, step S4 is changed to:

[0165] An organic compound (2H-benzopyran-3-carboxylic acid) was dispersed in DMSO to obtain an organic compound solution with a concentration of 5 mg / mL. The organic compound solution was spin-coated onto the active layer and then heated on a hot plate at 100 °C for 5 min to obtain a first protective layer with a thickness of 5 nm.

[0166] Referring to the method of Example 2, a first carrier functional layer is prepared on the first protective layer. The surface of the first carrier functional layer is used to form an Ag layer in step S5.

[0167] Example 5

[0168] The scheme in this embodiment is basically the same as that in embodiment 4, except that the device structure in this embodiment is ITO (80nm) / PEDOT: PSS (25nm) / TFB (25nm) / QD (25nm) / first protective layer (5nm, 2H-benzopyran-3-carboxylic acid) / first transition layer (5nm, 2H-benzopyran-3-carboxylic acid + ZMO) / first carrier functional layer ETL (20nm, ZMO) / Ag (100nm). Accordingly, step S4 is changed to:

[0169] Following the method in Example 4, a first protective layer was prepared on the active layer.

[0170] The organic compound (2H-benzopyran-3-carboxylic acid) and ZMO were weighed at a mass ratio of 1:6 and dispersed in DMSO to obtain a mixed solution with a ZMO concentration of 5 mg / mL. The mixed solution was spin-coated onto the first protective layer and then heated on an 80°C hot plate for 30 min to obtain a first transition layer with a thickness of 5 nm.

[0171] Referring to the method of Example 4, an electron transport layer is prepared on the first transition layer. The surface of the electron transport layer is used to form an Ag layer in step S5.

[0172] Example 6

[0173] The scheme in this embodiment is basically the same as that in embodiment 4, except that the device structure in this embodiment is ITO (80nm) / PEDOT: PSS (25nm) / TFB (25nm) / QD (25nm) / first protective layer (5nm, 2H-benzopyran-3-carboxylic acid) / first carrier functional layer (20nm, ZMO) / second protective layer (5nm, 2H-benzopyran-3-carboxylic acid) / Ag (100nm). Accordingly, step S4 is changed to:

[0174] Following the method in Example 4, a first protective layer was prepared on the active layer.

[0175] Referring to the method of Example 2, a first carrier functional layer is prepared on the first protective layer.

[0176] Referring to the method of Example 2, a second protective layer is prepared on the first carrier functional layer. The surface of the second protective layer is used to form an Ag layer in step S5.

[0177] Example 7

[0178] The scheme in this embodiment is basically the same as that in embodiment 6, except that the device structure in this embodiment is ITO (80nm) / PEDOT: PSS (25nm) / TFB (25nm) / QD (25nm) / first protective layer (5nm, 2H-benzopyran-3-carboxylic acid) / first transition layer (5nm, 2H-benzopyran-3-carboxylic acid + ZMO) / first carrier functional layer (20nm, ZMO) / second protective layer (5nm, 2H-benzopyran-3-carboxylic acid) / Ag (100nm). Accordingly, step S4 is changed to:

[0179] Following the method in Example 4, a first protective layer was prepared on the active layer.

[0180] Referring to the method in Example 5, a first transition layer is prepared on the first protective layer.

[0181] Referring to the method of Example 2, a first carrier functional layer is prepared on the first transition layer.

[0182] Referring to the method of Example 2, a second protective layer is prepared on the first carrier functional layer. The surface of the second protective layer is used to form an Ag layer in step S5.

[0183] Example 8

[0184] The scheme in this embodiment is basically the same as that in embodiment 7, except that the device in this embodiment also includes a third protective layer. The device structure is ITO (80nm) / PEDOT:PSS (25nm) / second carrier functional layer (25nm) / third protective layer (5nm, 2H-benzopyran-3-carboxylic acid) / QD (25nm) / first protective layer (5nm, 2H-benzopyran-3-carboxylic acid) / first transition layer (5nm, 2H-benzopyran-3-carboxylic acid + ZMO) / first carrier functional layer ETL (20nm, ZMO) / second protective layer (5nm, 2H-benzopyran-3-carboxylic acid) / Ag (100nm). Correspondingly,

[0185] The hole transport layer obtained in step S2 serves as the second carrier functional layer;

[0186] Step S3 is changed to:

[0187] An organic compound (2H-benzopyran-3-carboxylic acid) was dispersed in DMSO to obtain an organic compound solution with a concentration of 5 mg / mL; the organic compound solution was spin-coated onto the second carrier functional layer and annealed at 100 °C for 5 min to obtain a third protective layer with a thickness of 5 nm.

[0188] A solution of quantum dots (concentration of 30 mg / mL) in n-octane was spin-coated onto the third protective layer at 1500 rpm, and then heated on an 80°C hot plate for 5 min to obtain an active layer with a thickness of 25 nm.

[0189] Example 9

[0190] The scheme in this embodiment is basically the same as that in embodiment 8, except that the thickness of the first protective layer is 8nm in this embodiment.

[0191] Example 10

[0192] The scheme in this embodiment is basically the same as that in embodiment 8, except that the thickness of the first protective layer is 10nm in this embodiment.

[0193] Example 11

[0194] The scheme in this embodiment is basically the same as that in embodiment 8, except that the thickness of the first protective layer is 12nm in this embodiment.

[0195] Example 12

[0196] The scheme in this embodiment is basically the same as that in Example 8, except that the organic compound is replaced with 2-amine-3-carboxaldehyde-6,7-dimethylbenzopyranone.

[0197] Example 13

[0198] The scheme in this embodiment is basically the same as that in embodiment 8, except that the organic compound is replaced with 6-hydroxybenzopyran-3-carboxaldehyde.

[0199] Example 14

[0200] The scheme in this embodiment is basically the same as that in embodiment 8, except that the organic compound is replaced with 2H-1-benzopyran-3-carboxaldehyde.

[0201] Example 15

[0202] The scheme in this embodiment is basically the same as that in embodiment 8, except that in this embodiment, the quantum dots of the active layer are replaced with green quantum dots CdZnSe, with an emission wavelength of 540nm.

[0203] Example 16

[0204] The scheme in this embodiment is basically the same as that in embodiment 8, except that in this embodiment, the quantum dots of the active layer are replaced with red quantum dots ZnSe with an emission wavelength of 625nm.

[0205] Example 17

[0206] The scheme in this embodiment is basically the same as that in embodiment 4, except that the device in this embodiment is an inverted device, and the protective layer is disposed between the hole transport layer and the active layer. Accordingly, the device structure is Ag (100nm) / ETL (20nm, ZMO) / QD (25nm) / third protective layer (5nm, 2H-benzopyran-3-carboxylic acid) / second carrier functional layer (25nm, TFB) / PEDOT:PSS (25nm) / ITO (80nm).

[0207] During fabrication, each film layer is prepared sequentially according to the above-described film layer stacking order, and the preparation steps of each film layer can be referred to Example 4 above. Specifically, the preparation of the ETL refers to the preparation steps and film material of the first carrier functional layer; the preparation of the second carrier functional layer refers to the preparation steps and film material of the hole transport layer (TFB).

[0208] The preparation steps for the third protective layer are as follows:

[0209] An organic compound (2H-benzopyran-3-carboxylic acid) was dispersed in DMSO to obtain an organic compound solution with a concentration of 5 mg / mL; the organic compound solution was spin-coated onto the active layer and annealed at 100 °C for 5 min to obtain a third protective layer with a thickness of 5 nm.

[0210] Comparative Example 1

[0211] The scheme of this comparative example is basically the same as that of Example 1, except that the device structure of this comparative example 1 is ITO (80nm) / PEDOT:PSS (25nm) / TFB (25nm) / QD (25nm) / ETL (25nm, ZMO) / Ag (100nm).

[0212] Comparative Example 2

[0213] The scheme of this comparative example is basically the same as that of comparative example 1, except that in this comparative example, the active layer quantum dots are replaced with green quantum dots CdZnSe with an emission wavelength of 540nm.

[0214] Comparative Example 3

[0215] This comparative example is basically the same as Example 1, except that the active layer quantum dots are replaced with red light quantum dots ZnSe with an emission wavelength of 625nm.

[0216] Comparative Example 4

[0217] The scheme of this comparative example is basically the same as that of Example 17, except that the device structure of this comparative example 2 is Ag(100nm) / ETL(20nm, ZMO) / QD(25nm) / TFB(25nm) / PEDOT:PSS(25nm) / ITO(80nm).

[0218] Experimental Example

[0219] The QLED devices prepared in the above embodiments and comparative examples were subjected to performance tests, and the results are shown in Table 1. The testing methods are as follows:

[0220] (1) Current efficiency (CE) and brightness (L) detection: The efficiency test system was built by using the FPD optical characteristic measurement equipment of Fostec, and controlling the QE PRO spectrometer, Keithley 2400 and Keithley 6485 through LabVIEW. The voltage, current, brightness and emission spectrum parameters were measured and the current efficiency was calculated.

[0221] (2) Lifespan T95 1000nit T95 is the time required for a device's brightness to decrease to a certain percentage of its maximum brightness under constant current or voltage driving. This time, when the brightness drops to 95% of its maximum brightness, is defined as the measured lifetime. To shorten the testing cycle, device lifetime testing is typically performed by accelerating device aging at high brightness, referencing OLED device testing. The lifetime at high brightness is then obtained by fitting the extended exponential decay brightness decay formula, for example, the lifetime at 1000 nits is measured as T95. 1000nit The specific calculation formula is as follows:

[0222]

[0223] In the formula, T95 L For longer lifespan at low brightness, T95 H For the measured lifetime under high brightness, L H To accelerate the device to its maximum brightness, L L The value is 1000 nits, and A is the acceleration factor. For OLEDs, this value is usually 1.6 to 2. In this experiment, the lifetime of several groups of QLED devices under rated brightness was measured, and the value of A was found to be 1.7.

[0224] The life test system was used to test the life of the corresponding devices. The test conditions were: room temperature and air humidity of 30-60%.

[0225] (3) Stability test: The brightness of the device is measured and recorded as L. 0h The device was then operated at 5V for 50 hours and tested again, denoted as L. 50h Calculate the rate of change for each test item. Rate of change = (L) 0h -L 50h ) / L 50h *100%.

[0226] Table 1

[0227]

[0228]

[0229] As can be seen from the table above:

[0230] Examples 1 through 17 all exhibited high T95. 1000nit The presence of CE and L0, along with a low L change rate, indicates that the optoelectronic device proposed in this application has good luminous performance, lifespan, and stability.

[0231] Furthermore, comparing Examples 1, 8, 12-14 with Comparative Example 1, and Example 17 with Comparative Example 4, it can be seen that Examples 1, 8, 12-14, and 17 exhibit significantly higher T95. 1000nit The presence of CE and L0, as well as a lower L change rate, indicates that the use of the organic compounds proposed in this application, such as 2H-benzopyran-3-carboxylic acid, in the functional layer helps to improve the photostability of the device and extend its lifespan.

[0232] Meanwhile, by comparing Example 8 with Comparative Example 1, Example 15 with Comparative Example 2, and Example 16 with Comparative Example 3, Example 8 shows a significantly higher improvement in stability compared to Comparative Example 1, indicating that the method of this application has a more significant effect on improving the stability of blue light devices.

[0233] Furthermore, compared with Examples 1 to 8, Examples 2 and 4 exhibited a higher T95 than Example 1. 1000nit The lower CE and L0, and the lower L change rate, indicate that forming an organic compound-based protective layer on one side of the carrier functional layer through a stacked design method is more conducive to improving the device's luminescence performance, lifespan, and photostability. Meanwhile, Example 3 exhibits a T95 value superior to Example 2. 1000nit The rates of change of CE, L0, and L in Example 5 showed better T95 than those in Example 4. 1000nit The change rates of CE, L0, and L indicate that the design of the transition layer can reduce the transport barrier between layers, making the transport of charge carriers smoother and reducing the loss of charge carriers.

[0234] Furthermore, in Examples 8 and 12 to 14, Examples 8, 12 and 13 exhibited relatively high CE and L0, indicating that using organic compounds containing hydroxyl, carboxyl or amine groups in the structure is more conducive to improving the light-emitting performance of the device.

[0235] The technical solutions provided by the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. An optoelectronic device, characterized in that, It includes a stacked bottom electrode, a functional layer, and a top electrode; The material of the functional layer includes at least one organic compound, the organic compound having a fused structure consisting of at least two rings and having at least one conjugated double bond.

2. The optoelectronic device according to claim 1, characterized in that, The organic compound has the structure shown in formula (1) or (2): Among them, ring A and ring B are each independently selected from one or more combinations of substituted or unsubstituted C6-C30 aromatic rings and substituted or unsubstituted C3-C30 heterocycles; Z1, Z2, Z5, and Z6 are each independently selected from CR1 or N; Z3 and Z4 are each independently selected from CR2R3, O, S or NR4; When substituted, each substituent and R1 to R4 are independently selected from one or more combinations of deuterium, halogen, hydroxyl, carboxyl, amino, nitro, sulfonic acid, mercapto, cyano, C1 to C20 alkyl, C1 to C20 alkoxy, C6 to C30 aryl, and C3 to C30 heterocyclic groups.

3. The optoelectronic device according to claim 2, characterized in that, Ring A and ring B are each independently selected from any one of the following: substituted or unsubstituted benzene ring, substituted or unsubstituted naphthyl ring, substituted or unsubstituted anthracene ring, substituted or unsubstituted phenanthrene ring, substituted or unsubstituted benzofuran ring, substituted or unsubstituted benzopyrrole ring, substituted or unsubstituted benzothiophene ring, substituted or unsubstituted benzopyridine ring, and substituted or unsubstituted benzopyran ring; and / or, Z3 and Z4 are each independently selected from O; and / or, Z1, Z2, Z5, and Z6 are each independently selected from CR1; and / or, Each substituent and R1 are individually selected from one or more combinations of deuterium, hydroxyl, carboxyl, amino, C1-C20 alkyl, and C1-C20 alkoxy groups.

4. The optoelectronic device according to claim 2, characterized in that, The organic compounds include benzopyran compounds, which include one or more of 2H-benzopyran-3-carboxylic acid, 2H-1-benzopyran-3-carboxaldehyde, 6-hydroxybenzopyran-3-carboxaldehyde, 2-amine-3-carboxaldehyde-6,7-dimethylbenzopyranone, 2-methyl-2H-benzopyran-3-carboxaldehyde, and 4-methoxy-7-methyl-5H-furano[3,2-g]benzopyran-5-one.

5. The optoelectronic device according to claim 1, characterized in that, The functional layer includes an active layer; The functional layer further includes a first composite film layer disposed between the active layer and the top electrode and / or a second composite film layer disposed between the active layer and the bottom electrode, wherein the material of the first composite film layer includes a first semiconductor material and a first compound, and the material of the second composite film layer includes a second semiconductor material and a second compound; the first compound and the second compound are each independently selected from at least one of the organic compounds; the first semiconductor material is selected from one of N-type semiconductors and P-type semiconductors, and the second semiconductor material is selected from the other of the N-type semiconductors and the P-type semiconductors.

6. The optoelectronic device according to claim 5, characterized in that, The N-type semiconductor includes one or more of undoped metal oxides, doped metal oxides, group IIA-VIA semiconductor materials, group IIIA-VA semiconductor materials, and group IB-IIIA-VIA semiconductor materials. The undoped metal oxide includes one or more of ZnO, SnO2, and TiO2. The doped metal oxide is an oxide doped with a dopant element, including one or more of ZnO, SnO2, and TiO2. The dopant element includes one or more of Al, Mg, Li, In, and Ga. The group IIA-VIA semiconductor material includes at least one of ZnS, ZnSe, and CdS. The group IIIA-VA semiconductor material includes at least one of InP and GaP. The group IB-IIIA-VIA semiconductor material includes at least one of CuInS and CuGaS. Optionally, in the doped metal oxide, the molar percentage of the dopant element is 0.01–20%. And / or, The P-type semiconductor includes a hole transport material or a hole injection material. The hole transport material includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, and N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine. 4,4',4”-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly(p-phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds The materials selected include N,N,N',N'-tetraarylbenzidine, PEDOT:PSS, poly(N-vinylcarbazole), polymethacrylate, poly(9,9-octylfluorene), N,N'-di(naphthyl-1-yl)-N,N'-diphenylbenzidine, spiroNPB, doped graphene, undoped graphene, C60, and one or more transition metal oxides, wherein the transition metal oxides include one or more of NiO, MoO2, WO3, and CuO; the hole injection material includes poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene), and poly(3,4-ethylenedioxythiophene). The following are selected from the following: (2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, copper carbonate polyester, transition metal oxides, and metal chalcogenides; wherein the transition metal oxides include one or more of NiO, MoO2, WO3, and CuO; and the metal chalcogenides include one or more of MoS2, MoSe2, WS3, WSe3, and CuS; and / or, The active layer material includes organic light-emitting materials or quantum dots. The organic light-emitting materials include at least one of diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives or fluorene derivatives, blue-emitting TBPe fluorescent materials, green-emitting TTPA fluorescent materials, orange-emitting TBRb fluorescent materials, and red-emitting DBP fluorescent materials. The quantum dots include at least one of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The shell of the core-shell structure quantum dots comprises one or more layers. The material of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots respectively include group II-VI compounds and group IV-VI compounds. At least one of group II-V compounds and group I-III-VI compounds; said group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeS, CdHgSeSe At least one of Te, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI compounds include at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V compounds include at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, and Ga At least one of NAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the group I-III-VI compounds include at least one of CuInS2, CuInSe2, and AgInS2;The perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs; + Ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ At least one of them, where X is a halide anion selected from Cl. - ,Br - I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ At least one of them, where X is a halide anion selected from Cl. - ,Br - I - At least one of them; and / or, The bottom electrode is selected from one of the anode and the cathode, and the top electrode is selected from the other of the anode and the cathode. The anode and the cathode each independently include a doped metal oxide particle electrode, a metal and metal oxide composite electrode, a graphene electrode, a carbon nanotube electrode, or a metal electrode. The material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The metal and metal oxide composite electrode is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS. The material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg, and Ba.

7. The optoelectronic device according to claim 5, characterized in that, The first composite film layer is a first stack, which includes a protective layer and a first charge carrier functional layer stacked together. The protective layer includes a first protective layer disposed between the first charge carrier functional layer and the active layer and / or a second protective layer disposed between the first charge carrier functional layer and the top electrode; wherein the materials of the first protective layer and the second protective layer are each independently selected from the first compound, and the material of the first charge carrier functional layer is selected from the first semiconductor material; or... The first composite film layer is a first monolayer film, and the material of the first monolayer film includes a mixture of the first semiconductor material and the first compound.

8. The optoelectronic device according to claim 7, characterized in that, The thickness of the first protective layer is 5–10 nm; and / or, The thickness of the second protective layer is 5–10 nm; and / or, The thickness of the first carrier functional layer is 20–60 nm.

9. The optoelectronic device according to claim 7, characterized in that, When the first stack includes the first protective layer, the first stack further includes a first transition layer disposed between the first protective layer and the first carrier functional layer, wherein the material of the first transition layer includes a mixture of the first semiconductor material and the first compound; and / or, When the first stack includes the second protective layer, the first stack also includes a second transition layer disposed between the second protective layer and the first carrier functional layer, wherein the material of the second transition layer includes a mixture of the first semiconductor material and the first compound.

10. The optoelectronic device according to claim 9, characterized in that, In the first transition layer, the mass ratio of the first compound to the first semiconductor material is 1:5 to 10; and / or, The thickness of the first transition layer is 5–10 nm; and / or, In the second transition layer, the mass ratio of the first compound to the first semiconductor material is 1:5 to 10; and / or, The thickness of the second transition layer is 5–10 nm.

11. The optoelectronic device according to claim 7, characterized in that, In the first monolayer film, the mass ratio of the first compound to the first semiconductor material is 1:5 to 10; and / or, The thickness of the first monolayer film is 20–60 nm.

12. The optoelectronic device according to claim 6, characterized in that, The second composite film layer is a second monolayer film, and the material of the second monolayer film includes the second semiconductor material and the second compound; or, The second composite film layer is a second stack, which includes a second charge carrier functional layer and a third protective layer disposed between the second charge carrier functional layer and the active layer; wherein the material of the third protective layer is selected from the second compound, and the material of the second charge carrier functional layer is selected from the second semiconductor material.

13. The optoelectronic device according to claim 12, characterized in that, In the second monolayer film, the mass ratio of the second compound to the second semiconductor material is 1:5 to 10; and / or, The thickness of the second monolayer is 20–60 nm.

14. The optoelectronic device according to claim 12, characterized in that, The thickness of the third protective layer is 5–10 nm; and / or, The thickness of the second carrier functional layer is 20–60 nm; and / or, The second stack also includes a third transition layer disposed between the third protective layer and the second carrier functional layer, wherein the material of the third transition layer includes the second semiconductor material and the second compound.

15. The optoelectronic device according to claim 14, characterized in that, In the third transition layer, the mass ratio of the second compound to the second semiconductor material is 1:5 to 10; and / or, The thickness of the third transition layer is 5–10 nm.

16. A display device, characterized in that, Includes the optoelectronic device according to any one of claims 1 to 15.

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