用氦离子束辐照在二维材料薄膜中制造埃米孔道的方法
By using small pixel pitch, low-dose helium ion beam irradiation, and high-temperature annealing, angstrom-sized channels were fabricated in two-dimensional material films, solving the fabrication challenges in existing technologies and achieving stable, controllable mass production and high-throughput fabrication of angstrom-sized channels.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GUANGDONG UNIV OF TECH
- Filing Date
- 2026-04-29
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies struggle to fabricate angstrom-scale nanopores in two-dimensional thin films with high precision and controllability. In particular, helium ion beam irradiation suffers from a narrow process window, is prone to damaging the film structure, lacks defect stabilization methods, and cannot achieve stable and reproducible angstrom-scale pore fabrication.
By employing large-area helium ion beam irradiation with small pixel pitch and low processing dose combined with high-temperature annealing, angstrom-sized channels are formed in two-dimensional material films. The channel stability and controllability are ensured by detecting the pore size through electrolyte solution and secondary etching.
This method enables the batch fabrication of controllable angstrom-sized channels in two-dimensional thin films, avoiding film damage caused by high-dose irradiation. Combined with high-temperature annealing to inhibit defect healing, it provides a precise method for pore size control and high-throughput nanopore fabrication.
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Abstract
Citation Information
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