A boron carbide-based ceramic material and a method for producing the same

Abstract

This invention provides a boron carbide-based ceramic material and its preparation method. The preparation method includes the following steps: mixing raw materials, including boron nitride micro powder, silicon carbide, titanium hydride, and carbon materials, to obtain a mixture; spray granulating the mixture to obtain granulated powder; subjecting the granulated powder to biaxial molding and cold isostatic pressing sequentially to obtain a green body; and hot-pressing sintering the green body to finally obtain the boron carbide-based ceramic material. The preparation method provided by this invention uses titanium hydride as an in-situ reaction source, which combines with silicon carbide to form a reinforcing phase. The combination of biaxial molding, cold isostatic pressing, and hot-pressing sintering processes promotes the microscopic homogenization of the reinforcing phase and the densification of the material, resulting in a low-density, high-hardness, and high-toughness silicon carbide ceramic material.

Description

Technical Field

[0001] This invention belongs to the field of advanced structural ceramic materials technology, and relates to a boron carbide ceramic material, and more particularly to a boron carbide-based ceramic material and its preparation method. Background Technology

[0002] Boron carbide (B4C) ceramics are a representative advanced engineering ceramic material with low density, high hardness, and excellent neutron absorption cross section. It has great application potential in industrial fields that require lightweight, wear-resistant, and protective materials.

[0003] However, the inherent strong covalent bonding characteristic of boron carbide ceramics (approximately 90% covalent bonds) results in an extremely low atomic diffusion coefficient and poor sintering reactivity. This intrinsic property makes it difficult to achieve complete densification under conventional sintering conditions, leading to its inherent brittleness. Its fracture toughness is typically only 2.5–3.5 MPa·m. 1 / 2 The strength of boron carbide ceramics is far lower than that of metals and other engineering ceramics. When subjected to mechanical impact or localized stress concentration, cracks easily initiate and rapidly propagate within the boron carbide ceramic, resulting in catastrophic brittle fracture. This brittle fracture leads to poor fatigue resistance; after the first mechanical impact or cyclic stress, its structural integrity is compromised, making it impossible to guarantee long-term reliability under harsh conditions. This severely restricts its application in high-end protective applications.

[0004] Existing toughening solutions still face significant bottlenecks. On the one hand, the reaction kinetics of the sintering process are difficult to control precisely. The new phases formed by the reaction of toughening additives with the matrix are uneven in size and irregular in morphology, and local agglomeration occurs. These coarse or uneven reinforcing phase agglomerates can become new stress concentration points in the matrix, potentially becoming crack initiation points, weakening the toughening effect, and leading to unstable performance and poor reproducibility. On the other hand, while pursuing high toughness, introducing excessively high densities or excessive amounts of toughening components can significantly increase the overall density of the composite material, making it difficult to simultaneously achieve the core advantages of boron carbide: lightweight and high hardness.

[0005] Therefore, there is an urgent need to develop a new preparation process for boron carbide-based ceramic materials to meet the stringent requirements of high strength, high toughness and lightweight components in the high-end protection field. Summary of the Invention

[0006] The purpose of this invention is to provide a boron carbide-based ceramic material and its preparation method, which maintains the low density of boron nitride ceramic materials and improves their toughness.

[0007] To achieve this objective, the present invention adopts the following technical solution:

[0008] In a first aspect, the present invention provides a method for preparing a boron carbide-based ceramic material, the method comprising the following steps:

[0009] (1) The raw materials are mixed, including boron nitride micro powder, silicon carbide, titanium hydride and carbon materials, to obtain a mixture. The mixture is then spray-granulated to obtain granulated powder.

[0010] (2) The granulated powder is subjected to bidirectional molding and cold isostatic pressing in sequence to obtain a green body;

[0011] (3) The green body is hot-pressed and sintered to finally obtain the boron carbide-based ceramic material.

[0012] The preparation method provided by this invention uses titanium hydride and silicon carbide as toughening agents for ceramic materials. During sintering, titanium hydride undergoes a decomposition followed by a reaction, generating highly active titanium atoms that promote densification. Compared to pure titanium powder, this method avoids intense exothermic reactions and localized agglomeration, and also releases hydrogen to reduce the oxide layer on the particle surface, purifying the interface. Titanium hydride and silicon carbide can generate TiB2, forming a uniformly distributed nano-reinforcing phase within the ceramic material. In the preparation process, spray granulation promotes phase dispersion. A combined cold pressing process using bidirectional molding and cold isostatic pressing enhances the density and strength of the compact and promotes the homogenization of its microstructure, achieving initial densification and obtaining a uniformly dense compact. Then, under pressure sintering, the ceramic components are further dispersed and migrated, resulting in a uniform and fine microstructure, thereby increasing the density of the ceramic material and improving its toughness while maintaining the low density of boron carbide ceramics.

[0013] Preferably, the composition of the raw materials for preparation includes, by mass percentage: 60%-90% boron carbide, 5%-18% silicon carbide, 3%-15% titanium hydride, and 1%-5% carbon materials.

[0014] The boron carbide content in the raw materials is 60%-90% by mass, for example, it can be 60%, 65%, 70%, 75%, 80%, 85% or 90%, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0015] The raw materials used in the preparation contain silicon carbide at a mass percentage of 5%-18%, for example, 5%, 8%, 10%, 12%, 15% or 18%, but are not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0016] The mass percentage of titanium hydride in the raw materials is 3%-15%, for example, it can be 3%, 5%, 8%, 10%, 12% or 15%, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0017] The carbon material in the raw materials is 1%-5% by mass, for example, it can be 1%, 2%, 3%, 4% or 5%, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0018] Preferably, the carbon material includes at least one of carbon powder, graphite, graphene, or carbon nanotubes.

[0019] Preferably, the particle size of the boron carbide micro powder is in the range of 0.5-2μm, for example, it can be 0.5μm, 0.8μm, 1μm, 1.2μm, 1.5μm, 1.8μm or 2μm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0020] Preferably, the boron carbide micro powder is obtained by high-energy ball milling.

[0021] Preferably, the ball milling time of the high-energy ball mill is 12-24h, for example, it can be 12h, 15h, 18h, 21h or 24h, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0022] Preferably, the ball-to-material ratio of the high-energy ball mill is (4-6):1, for example, it can be 4:1, 4.5:1, 5:1, 5.5:1 or 6:1, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0023] Preferably, the grinding ball material of the high-energy ball mill includes tungsten carbide and / or boron carbide.

[0024] Preferably, the high-energy ball milling is followed by vacuum drying.

[0025] Preferably, the vacuum drying temperature is 60-80℃, for example, it can be 60℃, 65℃, 70℃, 75℃ or 80℃, but is not limited to the listed values, and other unlisted values ​​within the range are also applicable.

[0026] Preferably, the vacuum drying time is 5-12 hours, for example, 5 hours, 8 hours, 10 hours or 12 hours, but not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0027] Preferably, the mixing method includes wet ball milling.

[0028] Preferably, the dispersion medium for the wet ball milling includes anhydrous ethanol.

[0029] Preferably, the grinding ball material of the wet ball mill includes silicon carbide and / or boron carbide.

[0030] Preferably, the ball-to-material ratio in the wet ball mill is (2-4):1, for example, it can be 2:1, 2.5:1, 3:1, 3.5:1 or 4:1, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0031] Preferably, the wet ball milling time is 8-24 hours, for example, it can be 8 hours, 12 hours, 15 hours, 18 hours, 21 hours or 24 hours, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0032] Preferably, the inlet air temperature for spray granulation is 80-110℃, for example, it can be 80℃, 85℃, 90℃, 95℃, 100℃, 105℃, 110℃, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0033] Preferably, the outlet air temperature of the spray granulation is 60-80℃, for example, it can be 60℃, 65℃, 70℃, 75℃, or 80℃, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0034] Preferably, the pressure of the bidirectional molding is 150-200 MPa, for example, it can be 150 MPa, 160 MPa, 170 MPa, 180 MPa, 190 MPa or 200 MPa, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0035] Bidirectional molding refers to molding a material by applying pressure simultaneously from two opposite directions. The pressure in bidirectional molding refers to the relative pressure of the pressure heads applied from two opposite directions.

[0036] Preferably, the bidirectional molding time is 0.5-5 min, for example, it can be 0.5 min, 1 min, 2 min, 3 min, 4 min or 5 min, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0037] Preferably, the pressure of the cold isostatic pressing is 200-300 MPa, for example, it can be 200 MPa, 220 MPa, 240 MPa, 250 MPa, 260 MPa, 280 MPa or 300 MPa, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0038] Preferably, the cold isostatic pressing time is 5-15 minutes, for example, it can be 5 minutes, 8 minutes, 10 minutes, 12 minutes or 15 minutes, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0039] Preferably, the density of the green body is ≥2.05 g / cm³. 3 .

[0040] Preferably, the hot pressing sintering temperature is 1950-2100℃, for example, it can be 1950℃, 1980℃, 2000℃, 2020℃, 2050℃, 2080℃ or 2100℃, but is not limited to the listed values, and other unlisted values ​​within the range are also applicable.

[0041] Preferably, the hot pressing sintering pressure is 30-50 MPa, for example, it can be 30 MPa, 32 MPa, 35 MPa, 38 MPa, 40 MPa, 42 MPa, 45 MPa, 48 MPa or 50 MPa, but is not limited to the listed values, and other unlisted values ​​within the range are also applicable.

[0042] Preferably, the hot pressing sintering time is 30-60 min, for example, it can be 30 min, 35 min, 40 min, 45 min, 50 min, 55 min or 60 min, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0043] As a preferred embodiment of the preparation method provided by the present invention, the preparation method includes the following steps:

[0044] (1) The boron carbide coarse powder is subjected to high-energy ball milling for 12-24 hours, and then dried to obtain boron carbide micro powder with a particle size of 0.5-2 μm; the raw materials are wet-mixed according to the following mass percentages: boron carbide micro powder 60%-90%, silicon carbide 5%-18%, titanium hydride 3%-15%, and carbon materials 1%-5%; the wet mixing method includes ball milling with anhydrous ethanol as the dispersion medium for 8-24 hours to obtain a mixture, and spray granulation of the mixture to obtain granulated powder. The spray granulation process parameters include: inlet air temperature of 80-110℃ and outlet air temperature of 60-80℃;

[0045] (2) The granulated powder is subjected to biaxial molding and cold isostatic pressing in sequence. The pressure of biaxial molding is 150-200 MPa and the time is 0.5-5 min. The pressure of cold isostatic pressing is 200-300 MPa and the time is 5-15 min, to obtain a density ≥2.05 g / cm³. 3 raw blanks;

[0046] (3) The green body is subjected to hot pressing sintering. The hot pressing sintering process parameters include: temperature 1950-2100℃, pressure 30-50MPa, and time 30-60min, and finally the boron carbide-based ceramic material is obtained.

[0047] In a second aspect, the present invention provides a boron carbide-based ceramic material, wherein the boron carbide-based ceramic material is prepared by the preparation method described in the first aspect.

[0048] The density of the boron carbide-based ceramic material is 2.60-2.70 g / cm³. 3 Fracture toughness ≥ 5.5 MPa·m¹ / ², hardness ≥ 30 GPa.

[0049] Compared with the prior art, the present invention has the following beneficial effects:

[0050] The preparation method provided by this invention uses titanium hydride as an in-situ reaction source, which combines with silicon carbide to form a reinforcing phase. It also combines biaxial molding, cold isostatic pressing and hot pressing sintering processes to promote the micro-homogenization of the reinforcing phase and the densification of the material, thereby obtaining silicon carbide ceramic materials with low density, high hardness and toughness. Detailed Implementation

[0051] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.

[0052] Example 1

[0053] This embodiment provides a method for preparing a boron carbide-based ceramic material, the method comprising the following steps:

[0054] (1) The boron carbide coarse powder was refined by high-energy ball milling. The process parameters of high-energy ball milling included: using tungsten carbide grinding balls, a ball-to-material ratio of 5:1, a ball milling time of 18h, and drying the powder in a vacuum drying oven at 70℃ for 8 hours after high-energy ball milling to obtain boron carbide micro powder with a particle size in the range of 0.5-2μm.

[0055] (2) The raw materials are prepared according to the following mass percentages: 75% boron carbide micro powder, 12% silicon carbide, 10% titanium hydride, and 3% carbon powder. The raw materials are prepared by wet mixing. The process parameters of wet mixing include: using anhydrous ethanol as the dispersion medium, using boron carbide grinding balls, the ball-to-material ratio is 3:1, the mixing time is 18h, and the slurry obtained by wet mixing is spray granulated to obtain granulated powder. The process parameters of spray granulation include: the inlet air temperature is 100℃ and the outlet air temperature is 70℃.

[0056] (3) The granulated powder is first subjected to biaxial molding, the pressure of biaxial molding is 175MPa, the time of biaxial molding is 3min, and then subjected to cold isostatic pressing, the pressure of cold isostatic pressing is 250MPa, the time of cold isostatic pressing is 10min, to obtain the green body.

[0057] (4) The obtained green blank is placed in a vacuum hot pressing sintering furnace for hot pressing sintering. The process parameters for hot pressing sintering include: temperature of 2000℃, pressure of 40MPa, and holding time of 45 minutes to obtain boron carbide-based ceramic material.

[0058] (5) The obtained boron carbide-based ceramic material is further precision ground and polished to achieve the required size and surface finish of the product.

[0059] Example 2

[0060] This embodiment provides a method for preparing a boron carbide-based ceramic material, the method comprising the following steps:

[0061] (1) The boron carbide coarse powder was refined by high-energy ball milling. The process parameters of high-energy ball milling included: using tungsten carbide grinding balls, a ball-to-material ratio of 5:1, a ball milling time of 12h, and drying the powder in a vacuum drying oven at 60℃ for 12 hours after high-energy ball milling to obtain boron carbide micro powder with a particle size in the range of 0.5-2μm.

[0062] (2) The raw materials are prepared according to the following mass percentages: 75% boron carbide micro powder, 5% silicon carbide, 15% titanium hydride, and 5% carbon powder. The raw materials are prepared by wet mixing. The process parameters of wet mixing include: using anhydrous ethanol as the dispersion medium, using boron carbide grinding balls, the ball-to-material ratio is 3:1, the mixing time is 8h, and the slurry obtained by wet mixing is spray granulated to obtain granulated powder. The process parameters of spray granulation include: the inlet air temperature is 110℃ and the outlet air temperature is 65℃.

[0063] (3) The granulated powder is first subjected to biaxial molding, the pressure of biaxial molding is 200MPa, the time of biaxial molding is 0.5min, and then subjected to cold isostatic pressing, the pressure of cold isostatic pressing is 200MPa, the time of cold isostatic pressing is 15min, to obtain the green body.

[0064] (4) The obtained green blank is placed in a vacuum hot pressing sintering furnace for hot pressing sintering. The process parameters for hot pressing sintering include: temperature of 1950℃, pressure of 50MPa, and holding time of 60 minutes to obtain boron carbide-based ceramic material.

[0065] (5) The obtained boron carbide-based ceramic material is further precision ground and polished to achieve the required size and surface finish of the product.

[0066] Example 3

[0067] This embodiment provides a method for preparing a boron carbide-based ceramic material, the method comprising the following steps:

[0068] (1) The boron carbide coarse powder was refined by high-energy ball milling. The process parameters of high-energy ball milling included: using tungsten carbide grinding balls, a ball-to-material ratio of 5:1, a ball milling time of 24h, and drying the powder in a vacuum drying oven at 80℃ for 5 hours after high-energy ball milling to obtain boron carbide micro powder with a particle size in the range of 0.5-2μm.

[0069] (2) The raw materials are prepared according to the following mass percentages: 76% boron carbide micro powder, 18% silicon carbide, 5% titanium hydride, and 1% carbon powder. The raw materials are prepared by wet mixing. The process parameters of wet mixing include: using anhydrous ethanol as the dispersion medium, using boron carbide grinding balls, the ball-to-material ratio is 3:1, the mixing time is 24h, and the slurry obtained by wet mixing is spray granulated to obtain granulated powder. The process parameters of spray granulation include: the inlet air temperature is 110℃ and the outlet air temperature is 70℃.

[0070] (3) The granulated powder is first subjected to biaxial molding, the pressure of biaxial molding is 150MPa, the time of biaxial molding is 5min, and then subjected to cold isostatic pressing, the pressure of cold isostatic pressing is 300MPa, the time of cold isostatic pressing is 5min, to obtain green body.

[0071] (4) The obtained green blank is placed in a vacuum hot pressing sintering furnace for hot pressing sintering. The process parameters for hot pressing sintering include: temperature of 2100℃, pressure of 30MPa, and holding time of 30 minutes to obtain boron carbide-based ceramic material.

[0072] (5) The obtained boron carbide-based ceramic material is further precision ground and polished to achieve the required size and surface finish of the product.

[0073] Example 4

[0074] This embodiment provides a method for preparing boron carbide-based ceramic materials. Compared with Example 1, the pressure of bidirectional molding in step (3) is controlled to be 120 MPa, and the rest are the same as in Example 1.

[0075] Example 5

[0076] This embodiment provides a method for preparing boron carbide-based ceramic materials. Compared with Example 1, the pressure of bidirectional molding in step (3) is controlled to be 230 MPa, and the rest are the same as in Example 1.

[0077] Example 6

[0078] This embodiment provides a method for preparing boron carbide-based ceramic materials. Compared with Example 1, the pressure of cold isostatic pressing in step (3) is controlled to be 180 MPa, and the rest are the same as in Example 1.

[0079] Example 7

[0080] This embodiment provides a method for preparing boron carbide-based ceramic materials. Compared with Example 1, the pressure of cold isostatic pressing in step (3) is controlled to be 320 MPa, and the rest are the same as in Example 1.

[0081] Example 8

[0082] This embodiment provides a method for preparing boron carbide-based ceramic materials. Compared with Example 1, the temperature of hot pressing sintering in step (4) is controlled at 1800℃, and the rest are the same as in Example 1.

[0083] Example 9

[0084] This embodiment provides a method for preparing boron carbide-based ceramic materials. Compared with Example 1, the temperature of hot pressing sintering in step (4) is controlled at 2300℃, and the rest are the same as in Example 1.

[0085] Comparative Example 1

[0086] This comparative example provides a method for preparing boron carbide-based ceramic materials. Compared with Example 1, the raw materials are prepared by replacing titanium powder with titanium powder in equal mass, while the rest are the same as in Example 1.

[0087] Comparative Example 2

[0088] This comparative example provides a method for preparing boron carbide-based ceramic materials. Compared with Example 1, the bidirectional molding in step (3) is replaced with unidirectional molding, while maintaining the same pressure. All other steps are the same as in Example 1.

[0089] Comparative Example 3

[0090] This comparative example provides a method for preparing boron carbide-based ceramic materials. Compared with Example 1, step (3) does not involve cold isostatic pressing, while the rest is the same as in Example 1.

[0091] Comparative Example 4

[0092] This comparative example provides a method for preparing boron carbide-based ceramic materials. Compared with Example 1, the hot pressing sintering in step (4) is replaced with atmospheric pressure sintering, while maintaining the same sintering temperature and time. The rest are the same as in Example 1.

[0093] Comparative Example 5

[0094] This comparative example provides a method for preparing boron carbide-based ceramic materials. Compared with Example 1, silicon carbide is not added to the raw materials, and silicon carbide is replaced by titanium hydride in equal mass. All other aspects are the same as in Example 1.

[0095] Performance testing

[0096] The boron carbide-based ceramic materials prepared in the examples and comparative examples were subjected to density, hardness and fracture toughness tests, and the results are shown in Table 1.

[0097] Table 1

[0098]

[0099] As can be seen from the test results in Table 1, referring to Examples 1-9, the boron carbide-based ceramic material prepared by this invention has high density, reaching 97%, especially above 98.5%, high hardness (Vickers hardness above 30 GPa), and extremely high fracture toughness (fracture toughness above 5.5 MPa·m). 1 / 2 The above is in comparison with commercial boron carbide (fracture toughness 3.2 MPa·m). 1 / 2 Compared to the control group, the fracture toughness was significantly improved by more than 70%. In contrast, when the raw material composition or preparation process was changed, the density, hardness, and fracture toughness of the resulting ceramic material all decreased significantly.

[0100] Furthermore, compared to other embodiments, in Examples 1-3, when reasonable preparation process parameters are controlled, the performance of the obtained materials is better. Compared to the results of Example 1, in Examples 4-9, when the process pressure or temperature is too high or too low, the densification effect of the material decreases, and the fracture toughness decreases.

[0101] In summary, the preparation method provided by this invention uses titanium hydride as an in-situ reaction source to form a reinforcing phase with silicon carbide. It combines biaxial molding, cold isostatic pressing and hot pressing sintering processes to promote the micro-homogenization of the reinforcing phase and the densification of the material, thereby obtaining silicon carbide ceramic materials with low density, high hardness and toughness.

[0102] The above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the protection and disclosure scope of the present invention.

Claims

1. A method for preparing a boron carbide-based ceramic material, characterized in that, The preparation method includes the following steps: (1) The raw materials are mixed, including boron nitride micro powder, silicon carbide, titanium hydride and carbon materials, to obtain a mixture. The mixture is then spray-granulated to obtain granulated powder. (2) The granulated powder is subjected to bidirectional molding and cold isostatic pressing in sequence to obtain a green body; (3) The green body is hot-pressed and sintered to finally obtain the boron carbide-based ceramic material.

2. The preparation method according to claim 1, characterized in that, The composition of the raw materials for preparation, by mass percentage, includes: 60%-90% boron carbide, 5%-18% silicon carbide, 3%-15% titanium hydride, and 1%-5% carbon materials; Preferably, the carbon material includes at least one of carbon powder, graphite, graphene, or carbon nanotubes.

3. The preparation method according to claim 1 or 2, characterized in that, The particle size range of the boron carbide micro powder is 0.5-2 μm; Preferably, the boron carbide micro powder is obtained by high-energy ball milling; Preferably, the high-energy ball milling time is 12-24 hours; Preferably, the high-energy ball milling is followed by vacuum drying; Preferably, the vacuum drying temperature is 60-80℃; Preferably, the vacuum drying time is 5-12 hours.

4. The preparation method according to any one of claims 1-3, characterized in that, The mixing method includes wet ball milling; Preferably, the dispersion medium for the wet ball milling includes anhydrous ethanol; Preferably, the wet ball milling time is 8-24 hours.

5. The preparation method according to any one of claims 1-4, characterized in that, The inlet air temperature for the spray granulation is 80-110℃; Preferably, the outlet air temperature of the spray granulation is 60-80℃.

6. The preparation method according to any one of claims 1-5, characterized in that, The pressure of the bidirectional molding is 150-200 MPa; Preferably, the bidirectional molding time is 0.5-5 minutes.

7. The preparation method according to any one of claims 1-6, characterized in that, The pressure of the cold isostatic pressing is 200-300 MPa; Preferably, the cold isostatic pressing time is 5-15 minutes; Preferably, the density of the green body is ≥2.05 g / cm³. 3 .

8. The preparation method according to any one of claims 1-7, characterized in that, The hot pressing sintering temperature is 1950-2100℃; Preferably, the pressure of the hot pressing sintering is 30-50 MPa; Preferably, the hot pressing sintering time is 30-60 minutes.

9. The preparation method according to any one of claims 1-8, characterized in that, The preparation method includes the following steps: (1) The boron carbide coarse powder is subjected to high-energy ball milling for 12-24 hours, and then dried to obtain boron carbide micro powder with a particle size of 0.5-2 μm; the raw materials are wet-mixed according to the following mass percentages: boron carbide micro powder 60%-90%, silicon carbide 5%-18%, titanium hydride 3%-15%, and carbon materials 1%-5%; the wet mixing method includes ball milling with anhydrous ethanol as the dispersion medium for 8-24 hours to obtain a mixture, and spray granulation of the mixture to obtain granulated powder. The spray granulation process parameters include: inlet air temperature of 80-110℃ and outlet air temperature of 60-80℃; (2) The granulated powder is subjected to biaxial molding and cold isostatic pressing in sequence. The pressure of biaxial molding is 150-200 MPa and the time is 0.5-5 min. The pressure of cold isostatic pressing is 200-300 MPa and the time is 5-15 min, to obtain a density ≥2.05 g / cm³. 3 raw blanks; (3) The green body is subjected to hot pressing sintering. The hot pressing sintering process parameters include: temperature 1950-2100℃, pressure 30-50MPa, and time 30-60min, and finally the boron carbide-based ceramic material is obtained.

10. A boron carbide-based ceramic material, characterized in that, The boron carbide-based ceramic material is prepared using the preparation method described in any one of claims 1-9.

Images