A low melting point liquid alloy and a method for producing the same

Abstract

This invention belongs to the field of liquid alloy materials technology, and discloses a low-melting-point liquid alloy and its preparation method. The liquid alloy material is composed of the following raw materials in the indicated mass fractions: gallium 40-60%, indium 24-32%, tin 11-30%, zinc 1.5-5%, copper 0.01-0.8%, with the remainder being impurities. The preparation method includes the steps of preparing a ternary liquid alloy GaInSn, a quaternary liquid alloy GaInSnZn, and a pentagonal liquid metal GaInSnZnCu. This invention optimizes the raw material ratio and preparation process, and introduces a flux, enabling the production of liquid alloy materials with melting points below -10°C at low temperatures. This significantly broadens the flow temperature range of gallium-based materials. Furthermore, the use of common and relatively inexpensive zinc and copper in the raw materials replaces existing rare metals such as bismuth and antimony, which is conducive to industrial-scale production.

Description

Technical Field

[0001] This invention belongs to the field of liquid technology, and specifically relates to a low-melting-point liquid alloy and its preparation method. Background Technology

[0002] Liquid metals combine the excellent thermal conductivity of metals with the good flow characteristics of liquids, showing broad application prospects in fields such as heat dissipation components for high-energy-consuming and small-sized electronic products, thermoelectric power generation, and magnetothermal medical treatment, and are expected to become an ideal alternative to traditional heat-conducting media.

[0003] Gallium is a common liquid metal, but with the increasing demands for chip thermal management, single-metal gallium is no longer sufficient to meet the fluid heat exchange requirements below room temperature or even below 0°C. This is because: First, gallium loses its fluidity when the ambient temperature is below room temperature, affecting its thermal conductivity. Second, elemental gallium is highly corrosive to metals commonly used in heat pipes, such as copper, aluminum, and silver, and has extremely high surface tension (approximately 700 mN / m), resulting in poor wettability on metal surfaces. When encapsulated in metal heat pipes, it is prone to "overflow," posing a leakage risk. Furthermore, elemental gallium is expensive (approximately 2300 RMB / kg) and its limited availability directly increases heat exchange costs. Therefore, the development of gallium-based liquid metal alloys has become a hot research topic in this field.

[0004] Developing liquid metal systems with melting points below 0°C or even lower that are easily mass-produced remains a significant challenge. Currently, commercially available gallium alloys mostly have melting points above 0°C or even 10°C, which is still somewhat different from the ideal carrier liquid and makes them unsuitable for server thermal management in cold regions. Significantly reducing the melting point of gallium-based liquid metal alloys and broadening the liquid temperature range of the alloys remains a challenge. In recent years, numerous publications have reported methods for preparing liquid metals with melting points below 10°C. Obtaining alloys with melting points below 0°C often requires the co-melting of quaternary or higher metals. As the number of metal types increases, the conditions required to ensure complete melting and prevent oxidation also increase. Currently reported processes for obtaining low-melting-point liquid metals mostly rely on high-temperature, high-vacuum environments or require ultrasonic-assisted technology. For example, patent "202411601184.7 A low-melting-point gallium-based liquid alloy and its preparation method and application" involves gallium, indium, tin, zinc, bismuth, antimony, lead, and rare earth metals in a low-vacuum environment. High-temperature alloying at 200–650℃ yielded a liquid alloy with a melting point as low as -10℃; patent "202510260034.2 A design method and preparation method for a low-melting-point GaInSnBiZn liquid metal" uses an electric arc melting furnace to evacuate to... The following describes a process where a mixture of gallium, indium, tin, bismuth, and zinc is smelted at 425°C using pure argon gas, resulting in an alloy with a melting point far exceeding room temperature (62°C). Patent "202110120504.7 A liquid metal with a melting point below 6°C developed based on DSC test results and its preparation method" describes a liquid metal with a melting point of 5.97°C, which requires vacuum melting in a test tube using an alcohol lamp, followed by evacuation to -0.1 Pa, and then temperature-controlled ultrasonic melting until uniform. Patent "CN202211144508.X A low-melting-point gallium-based liquid..." The patent "Liquid Metal and Its Preparation Method" describes a method for preparing liquid metal with a melting point of 5.9-7℃. This method also requires sealing the test tube by burning it with a hydrogen torch under low vacuum (0.01Pa) conditions, and then using ultrasound to melt the metal. Similarly, the patent "CN202110118487.3 A Low Melting Point Liquid Metal and a Method for Continuously Reducing the Melting Point of Liquid Metal from Pentium to Octium" describes a series of pentium to octium liquid metal systems with melting points of 6-7℃. This method also involves sealing the test tube under vacuum conditions and then using ultrasound to achieve uniform melting of the metal.

[0005] With the rapid expansion of applications for liquid metals, it is imperative to develop a method for preparing low-melting-point liquid metals suitable for industrial-scale production. High temperatures and low vacuum inevitably lead to high costs, and the method of melting in test tubes encapsulated with alcohol lamps is also unsuitable for large-scale production.

[0006] The information disclosed in this background section is intended only to enhance the understanding of the overall background of the invention and should not be construed as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Summary of the Invention

[0007] The purpose of this invention is to provide a low-melting-point liquid alloy and its preparation method, thereby overcoming the defects in the prior art.

[0008] To achieve the above objectives, the present invention provides a low-melting-point liquid alloy composed of the following raw materials in mass fractions: gallium 40-60%, indium 24-32%, tin 11-30%, zinc 1.5-5%, copper 0.01-0.8%, with the remainder being impurities.

[0009] The present invention also provides a method for preparing the above-mentioned low-melting-point liquid alloy, comprising the following steps: S1: Weigh out gallium, indium and tin elements according to their mass fractions, put them into a container, and react them in a vacuum environment at 160-185℃ for 1.5-3 hours to obtain a ternary liquid alloy GaInSn. S2: Weigh out elemental zinc according to the mass fraction, add elemental zinc to ternary liquid alloy GaInSn, add flux at the same time, and react in a vacuum environment at 110-150℃ for 1.5-3h to obtain quaternary liquid alloy GaInSnZn. S3: Weigh out elemental copper according to the mass fraction, add elemental copper to the quaternary liquid alloy GaInSnZn, add flux at the same time, and react in a vacuum environment at 160-185℃ for 1.5-3h to obtain low melting point pentagonal liquid metal GaInSnZnCu.

[0010] Furthermore, preferably, the purity of gallium, indium, tin, zinc, and copper is greater than 99.9%.

[0011] Furthermore, preferably, the flux added in steps S2 and S3 is one or a mixture of two or more of lithium chloride, sodium chloride, potassium chloride and magnesium chloride.

[0012] Furthermore, preferably, the amount of flux used in step S2 is 0.001-0.5% of the total amount of gallium, indium, tin, and zinc metals, and the amount of flux used in step S3 is 0.001-0.3% of the total amount of gallium, indium, tin, zinc, and copper metals.

[0013] Furthermore, preferably, steps S1, S2, and S3 are all performed under an argon atmosphere.

[0014] Compared with the prior art, the present invention has the following beneficial effects: This invention optimizes the ratio of raw materials and introduces a flux, which can obtain liquid alloy materials with a melting point below -10°C under low-temperature reaction conditions, significantly broadening the flow temperature range of gallium-based materials. The present invention uses common and relatively inexpensive zinc and copper as raw materials to replace existing rare metals such as bismuth and antimony, which is conducive to industrial-scale production. This invention optimizes the smelting process and, by combining the optimization of the raw material ratio, achieves low-temperature smelting and obtains a five-element liquid metal alloy material with a low melting point. Attached Figure Description

[0015] Figure 1 The above are the DSC curves of the liquid metal obtained in Examples 1-5 of the present invention during the heating process; Figure 2 The above are the DSC curves of the liquid metal obtained in Examples 6-10 of the present invention during the heating process. Detailed Implementation

[0016] The specific embodiments of the present invention will be described in detail below, but it should be understood that the scope of protection of the present invention is not limited to the specific embodiments.

[0017] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form to prepare for the more detailed descriptions that follow. Example 1:

[0018] A method for preparing a low-melting-point liquid alloy includes the following steps: S1: Install a stirrer in a flask equipped with a vacuum valve, weigh out elemental gallium, indium, and tin in a mass ratio of 45:30:25, add the elements to the flask, evacuate the flask, and then introduce argon gas. Repeat the evacuation and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 180°C, react for 1.5 h, and then rapidly cool to room temperature to obtain the ternary liquid alloy GaInSn. S2: Add zinc granules and sodium chloride flux to a flask according to the mass ratio of GaInSn alloy, zinc granules and flux of 98:2:0.2. Vacuum the flask and then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 120°C, react for 2 hours, and then rapidly cool to room temperature to obtain the quaternary liquid alloy GaInSnZn. S3: Add copper and sodium chloride flux to a flask according to the mass ratio of GaInSnZn quaternary alloy, copper and sodium chloride of 99.6:0.4:0.15. Vacuum the flask, then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 175℃, react for 2 hours, and then rapidly cool to room temperature to obtain the low-melting-point pentagonal liquid metal GaInSnZnCu, with a melting point of about -16.9℃.

[0019] In this embodiment, the mass fractions of Ga, In, Sn, Zn and Cu are 43.8%, 29.2%, 24.3%, 1.985% and 0.399%, respectively, with the remainder being flux residues and unavoidable impurities. Example 2:

[0020] A method for preparing a low-melting-point liquid alloy includes the following steps: S1: Install a stirrer in a flask equipped with a vacuum valve, weigh out elemental gallium, indium, and tin in a mass ratio of 42:30:28, add the elements to the flask, evacuate the flask, and then introduce argon gas. Repeat the evacuation and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 185°C, react for 2 hours, and then rapidly cool to room temperature to obtain the ternary liquid alloy GaInSn. S2: Add zinc granules and lithium chloride flux to a flask according to the mass ratio of GaInSn alloy, zinc granules and flux of 98:2:0.2. Vacuum the flask and then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 120°C, react for 2 hours, and then rapidly cool to room temperature to obtain the quaternary liquid alloy GaInSnZn. S3: According to the mass ratio of GaInSnZn quaternary alloy, copper and sodium chloride of 99.8:0.2:0.2, copper and lithium chloride flux were added to the flask. The flask was evacuated and then argon gas was introduced. The evacuation and argon gas introduction were repeated three times to remove the air. The flask was placed in a silicone oil bath, stirred, heated to 180°C, reacted for 2 hours, and then rapidly cooled to room temperature to obtain the low-melting-point pentagonal liquid metal GaInSnZnCu, with a melting point of about -16.7°C.

[0021] In this embodiment, the mass fractions of Ga, In, Sn, Zn and Cu are 40.9%, 29.2%, 27.3%, 1.988% and 0.2%, respectively, with the remainder being flux residues and unavoidable impurities. Example 3:

[0022] A method for preparing a low-melting-point liquid alloy includes the following steps: S1: Install a stirrer in a flask equipped with a vacuum valve, weigh out elemental gallium, indium, and tin in a mass ratio of 45:33:22, add the elements to the flask, evacuate the flask, and then introduce argon gas. Repeat the evacuation and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 175°C, react for 2.5 hours, and then rapidly cool to room temperature to obtain the ternary liquid alloy GaInSn. S2: Add zinc granules and potassium chloride flux to a flask according to the mass ratio of GaInSn alloy, zinc granules and flux of 95:5:0.4. Vacuum the flask and then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 125°C, react for 1.5 h, and then rapidly cool to room temperature to obtain the quaternary liquid alloy GaInSnZn. S3: Add copper and sodium chloride flux to a flask according to the mass ratio of GaInSnZn quaternary alloy, copper and sodium chloride of 99.5:0.5:0.1. Vacuum the flask, then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 175℃, react for 2.5h, and then rapidly cool to room temperature to obtain the low-melting-point pentagonal liquid metal GaInSnZnCu, with a melting point of about -16.6℃.

[0023] In this embodiment, the mass fractions of Ga, In, Sn, Zn and Cu are 42.3%, 31.0%, 20.7%, 4.950% and 0.5%, respectively, with the remainder being flux residues and unavoidable impurities. Example 4:

[0024] A method for preparing a low-melting-point liquid alloy includes the following steps: S1: Install a stirrer in a flask equipped with a vacuum valve, weigh out elemental gallium, indium, and tin in a mass ratio of 46:31:23, add the elements to the flask, evacuate the flask, and then introduce argon gas. Repeat the evacuation and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 175°C, react for 2.5 hours, and then rapidly cool to room temperature to obtain the ternary liquid alloy GaInSn. S2: Add zinc granules and lithium chloride flux to a flask according to the mass ratio of GaInSn alloy, zinc granules and flux of 98:2:0.2. Vacuum the flask and then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 120°C, react for 2 hours, and then rapidly cool to room temperature to obtain the quaternary liquid alloy GaInSnZn. S3: Add copper and sodium chloride flux to a flask according to the mass ratio of GaInSnZn quaternary alloy, copper and sodium chloride of 99.2:0.8:0.3. Vacuum the flask, then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 180℃, react for 2 hours, and then rapidly cool to room temperature to obtain the low-melting-point pentagonal liquid metal GaInSnZnCu, with a melting point of about -15.35℃.

[0025] In this embodiment, the mass fractions of Ga, In, Sn, Zn and Cu are 44.5%, 30.0%, 22.2%, 1.974% and 0.798%, respectively, with the remainder being flux residues and unavoidable impurities. Example 5:

[0026] A method for preparing a low-melting-point liquid alloy includes the following steps: S1: Install a stirrer in a flask equipped with a vacuum valve, weigh out elemental gallium, indium, and tin in a mass ratio of 48:28:24, add the elements to the flask, evacuate the flask, and then introduce argon gas. Repeat the evacuation and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 180°C, react for 2 hours, and then rapidly cool to room temperature to obtain a ternary liquid alloy GaInSn. S2: Add zinc granules and sodium chloride flux to a flask according to the mass ratio of GaInSn alloy, zinc granules and flux of 96:4:0.5. Vacuum the flask and then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 130°C, react for 1.5 h, and then rapidly cool to room temperature to obtain the quaternary liquid alloy GaInSnZn. S3: Add copper and sodium chloride flux to a flask according to the mass ratio of GaInSnZn quaternary alloy, copper and sodium chloride of 99:1:0.3. Vacuum the flask, then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 185℃, react for 1.5h, and then rapidly cool to room temperature to obtain the low-melting-point pentagonal liquid metal GaInSnZnCu, with a melting point of about -14.6℃.

[0027] In this embodiment, the mass fractions of Ga, In, Sn, Zn and Cu are 45.3%, 26.4%, 22.6%, 3.929% and 0.997%, respectively, with the remainder being flux residues and unavoidable impurities. Example 6:

[0028] A method for preparing a low-melting-point liquid alloy includes the following steps: S1: Install a stirrer in a flask equipped with a vacuum valve, weigh out elemental gallium, indium, and tin in a mass ratio of 52:30:18, add the elements to the flask, evacuate the flask, and then introduce argon gas. Repeat the evacuation and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 170°C, react for 2.5 hours, and then rapidly cool to room temperature to obtain the ternary liquid alloy GaInSn. S2: Add zinc granules and sodium chloride flux to a flask according to the mass ratio of GaInSn alloy, zinc granules and flux of 98:2:0.2. Evacuate the flask and then introduce argon gas. Repeat the evacuation and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 115°C, react for 2.5 h, and then rapidly cool to room temperature to obtain the quaternary liquid alloy GaInSnZn. S3: Add copper and sodium chloride flux to a flask according to the mass ratio of GaInSnZn quaternary alloy, copper and sodium chloride of 99.85:0.15:0.1. Vacuum the flask, then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 160℃, react for 2.5h, and then rapidly cool to room temperature to obtain the low-melting-point pentagonal liquid metal GaInSnZnCu, with a melting point of about -15.4℃.

[0029] In this embodiment, the mass fractions of Ga, In, Sn, Zn and Cu are 50.7%, 29.3%, 17.6%, 1.991% and 0.15%, respectively, with the remainder being flux residues and unavoidable impurities. Example 7:

[0030] A method for preparing a low-melting-point liquid alloy includes the following steps: S1: Install a stirrer in a flask equipped with a vacuum valve, weigh out elemental gallium, indium, and tin in a mass ratio of 40:30:30, add the elements to the flask, evacuate the flask, and then introduce argon gas. Repeat the evacuation and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 185°C, react for 1.5 hours, and then rapidly cool to room temperature to obtain the ternary liquid alloy GaInSn. S2: Add zinc granules and sodium chloride flux to a flask according to the mass ratio of GaInSn alloy, zinc granules and flux of 98:2:0.3. Vacuum the flask and then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 120°C, react for 2.5 h, and then rapidly cool to room temperature to obtain the quaternary liquid alloy GaInSnZn. S3: Add copper and sodium chloride flux to a flask according to the mass ratio of GaInSnZn quaternary alloy, copper and sodium chloride of 99.96:0.04:0.2. Vacuum the flask, then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 160℃, react for 2.5h, and then rapidly cool to room temperature to obtain the low-melting-point pentagonal liquid metal GaInSnZnCu, with a melting point of about -13.2℃.

[0031] In this embodiment, the mass fractions of Ga, In, Sn, Zn and Cu are 39.0%, 29.3%, 29.3%, 1.99% and 0.01%, respectively, with the remainder being flux residues and unavoidable impurities. Example 8:

[0032] A method for preparing a low-melting-point liquid alloy includes the following steps: S1: Install a stirrer in a flask equipped with a vacuum valve, weigh out elemental gallium, indium, and tin in a mass ratio of 58:30:12, add the elements to the flask, evacuate the flask, and then introduce argon gas. Repeat the evacuation and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 165°C, react for 2.5 hours, and then rapidly cool to room temperature to obtain the ternary liquid alloy GaInSn. S2: Add zinc granules and sodium chloride flux to a flask according to the mass ratio of GaInSn alloy, zinc granules and flux of 97:3:0.3. Vacuum the flask and then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 125°C, react for 2 hours, and then rapidly cool to room temperature to obtain the quaternary liquid alloy GaInSnZn. S3: Add copper and sodium chloride flux to a flask according to the mass ratio of GaInSnZn quaternary alloy, copper and sodium chloride of 99.4:0.6:0.1. Vacuum the flask, then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 180℃, react for 2 hours, and then rapidly cool to room temperature to obtain the low-melting-point pentagonal liquid metal GaInSnZnCu, with a melting point of about -15.2℃.

[0033] In this embodiment, the mass fractions of Ga, In, Sn, Zn and Cu are 55.7%, 28.8%, 11.5%, 2.97% and 0.599%, respectively, with the remainder being flux residues and unavoidable impurities. Example 9:

[0034] A method for preparing a low-melting-point liquid alloy includes the following steps: S1: Install a stirrer in a flask equipped with a vacuum valve, weigh out elemental gallium, indium, and tin in a mass ratio of 55:30:15, add the elements to the flask, evacuate the flask, and then introduce argon gas. Repeat the evacuation and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 170°C, react for 2.5 hours, and then rapidly cool to room temperature to obtain the ternary liquid alloy GaInSn. S2: Add zinc granules and sodium chloride flux to a flask according to the mass ratio of GaInSn alloy, zinc granules and flux of 96:4:0.1. Vacuum the flask and then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 110°C, react for 2.5 h, and then rapidly cool to room temperature to obtain the quaternary liquid alloy GaInSnZn. S3: According to the mass ratio of GaInSnZn quaternary alloy, copper and sodium chloride of 99.7:0.3:0.25, copper and magnesium chloride flux were added to the flask. The flask was evacuated and then argon gas was introduced. The evacuation and argon gas introduction were repeated three times to remove the air. The flask was placed in a silicone oil bath, stirred, heated to 165℃, reacted for 3 hours, and then rapidly cooled to room temperature to obtain the low melting point pentagonal liquid metal GaInSnZnCu, with a melting point of about -11.1℃.

[0035] In this embodiment, the mass fractions of Ga, In, Sn, Zn and Cu are 52.5%, 28.6%, 14.3%, 3.974% and 0.299%, respectively, with the remainder being flux residues and unavoidable impurities. Example 10:

[0036] A method for preparing a low-melting-point liquid alloy includes the following steps: S1: Install a stirrer in a flask equipped with a vacuum valve, weigh out elemental gallium, indium, and tin in a mass ratio of 60:25:15, add the elements to the flask, evacuate the flask, and then introduce argon gas. Repeat the evacuation and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 160°C, react for 3 hours, and then rapidly cool to room temperature to obtain the ternary liquid alloy GaInSn. S2: Add zinc granules and sodium chloride flux to a flask according to the mass ratio of GaInSn alloy, zinc granules and flux of 97:3:0.2. Vacuum the flask and then introduce argon gas. Repeat the vacuuming and argon gas introduction operation three times to remove the air. Place the flask in a silicone oil bath, stir, heat to 125°C, react for 1.5 h, and then rapidly cool to room temperature to obtain the quaternary liquid alloy GaInSnZn. S3: According to the mass ratio of GaInSnZn quaternary alloy, copper and sodium chloride of 99.3:0.7:0.2, copper and magnesium chloride flux were added to the flask. The flask was evacuated and then argon gas was introduced. The evacuation and argon gas introduction were repeated three times to remove the air. The flask was placed in a silicone oil bath, stirred, heated to 170°C, reacted for 3 hours, and then rapidly cooled to room temperature to obtain the low-melting-point pentagonal liquid metal GaInSnZnCu, with a melting point of about -15.3°C.

[0037] In this embodiment, the mass fractions of Ga, In, Sn, Zn and Cu are 57.6%, 24%, 14.4%, 2.967% and 0.699%, respectively, with the remainder being flux residues and unavoidable impurities.

[0038] Figure 1 , Figure 2 The figures are DSC curves of the liquid metals obtained in Examples 1-5 and Examples 6-10 during the heating process, respectively. The peak temperature corresponds to the melting point of the alloy material. The experimental results show that the raw material ratio and process of the present invention can obtain a low melting point liquid metal alloy material.

[0039] The foregoing description of specific exemplary embodiments of the invention is for illustrative and explanatory purposes. These descriptions are not intended to limit the invention to the precise forms disclosed, and it will be apparent that many changes and variations can be made in accordance with the foregoing teachings. The exemplary embodiments were chosen and described in order to explain the specific principles of the invention and its practical application, thereby enabling those skilled in the art to implement and utilize various different exemplary embodiments of the invention, as well as various different choices and variations. The scope of the invention is intended to be defined by the claims and their equivalents.

Claims

1. A low-melting-point liquid alloy, characterized in that, The liquid alloy is composed of the following raw materials in the indicated mass fractions: gallium 40-60%, indium 24-32%, tin 11-30%, zinc 1.5-5%, copper 0.01-0.8%, with the remainder being impurities; the preparation method of the liquid alloy includes the following steps: S1: Weigh out gallium, indium and tin elements according to their mass fractions, put them into a container, and react them in a vacuum environment at 160-185℃ for 1.5-3 hours to obtain a ternary liquid alloy GaInSn. S2: Weigh out elemental zinc according to the mass fraction, add elemental zinc to ternary liquid alloy GaInSn, add flux at the same time, and react in a vacuum environment at 110-150℃ for 1.5-3h to obtain quaternary liquid alloy GaInSnZn. S3: Weigh out elemental copper according to the mass fraction, add elemental copper to the quaternary liquid alloy GaInSnZn, add flux at the same time, and react in a vacuum environment at 160-185℃ for 1.5-3h to obtain low melting point pentagonal liquid metal GaInSnZnCu.

2. The low-melting-point liquid alloy according to claim 1, characterized in that, The purity of gallium, indium, tin, zinc, and copper is all greater than 99.9%.

3. The low-melting-point liquid alloy according to claim 1, characterized in that, The flux added in steps S2 and S3 is one or a mixture of two or more of lithium chloride, sodium chloride, potassium chloride and magnesium chloride.

4. A low-melting-point liquid alloy according to claim 3, characterized in that, In step S2, the amount of flux used is 0.001-0.5% of the total amount of gallium, indium, tin, and zinc metals, and in step S3, the amount of flux used is 0.001-0.3% of the total amount of gallium, indium, tin, zinc, and copper metals.

5. A low-melting-point liquid alloy according to claim 1, characterized in that, Steps S1, S2, and S3 are all performed under an argon atmosphere.

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