A nozzle device for evaporation and an evaporation system

Abstract

This application relates to the field of vapor deposition technology, and provides a nozzle device and system for vapor deposition. The nozzle device includes a crucible, a nozzle, and a blocking structure. The crucible has a heating chamber and a homogenizing chamber connected together. The heating chamber is used to contain vapor deposition material. The nozzle has an inlet end and an outlet end connected together. The inlet end is connected to the homogenizing chamber, and the vapor deposition material is discharged to the outside of the crucible through the outlet end. The blocking structure is located inside the homogenizing chamber and is connected to the inlet end. The blocking structure is used to block a portion of the vapor deposition material in the homogenizing chamber and to guide another portion of the vapor deposition material in the homogenizing chamber to the inlet end. This application can solve the problem of uneven vapor deposition during the vapor deposition process.

Description

Technical Field

[0001] This application relates to the field of vapor deposition technology, and in particular to a nozzle device and vapor deposition system for vapor deposition. Background Technology

[0002] In OLED panel manufacturing, vacuum evaporation is one of the core processes. It involves evaporating and depositing various organic materials (such as light-emitting layer materials and hole transport materials) onto a glass substrate in a specific ratio and sequence to form a pixel structure.

[0003] During the vapor deposition process, the organic material is heated and evaporated into gaseous molecules, which are then ejected at a specific angle through the nozzle (200) outlet and pass through the micron-sized openings of the vapor deposition mask (FMM, Fine Metal Mask) to finally deposit on the glass substrate to form pixels.

[0004] In related technologies, uneven vapor deposition is a problem during the vapor deposition process. Summary of the Invention

[0005] This application provides a nozzle device and a vapor deposition system for vapor deposition, which can solve the problem of uneven vapor deposition during the vapor deposition process.

[0006] To achieve the above objectives, this application adopts the following technical solution:

[0007] In a first aspect, this application provides a nozzle device for vapor deposition, comprising:

[0008] The crucible has a connected heating chamber and a homogenizing chamber, the heating chamber being used to contain the vapor deposition material;

[0009] The nozzle has a connected inlet end and an outlet end, the inlet end being connected to the homogenization chamber, and the vapor-deposited material being discharged to the outside of the crucible through the outlet end.

[0010] The blocking structure is located inside the homogenization cavity and is connected to the inlet end. The blocking structure is used to block a portion of the vapor deposition material in the homogenization cavity and to guide another portion of the vapor deposition material in the homogenization cavity to the inlet end.

[0011] In some embodiments, the barrier structure is arranged to extend along the height direction of the crucible.

[0012] In some embodiments, at least a portion of the nozzle extends through the homogenization chamber, and the outer peripheral wall of the nozzle within the homogenization chamber forms a blocking structure.

[0013] In some implementations, it also includes:

[0014] The guide has one end connected to the inlet end and the other end connected to the homogenization chamber. The guide is used to guide the vapor deposition material in the homogenization chamber to the inlet end.

[0015] The guide element forms a blocking structure.

[0016] In some embodiments, the guide is coaxially arranged with the nozzle, and the guide is sealed to the nozzle.

[0017] In some implementations, it also includes:

[0018] An inner plate is placed inside the crucible, and a through hole is provided on the inner plate, through which the heating chamber and the homogenization chamber are connected;

[0019] Along the height of the crucible, the lowest point of the through hole is higher than the highest point of the vapor-deposited material.

[0020] In some embodiments, multiple through holes are provided, and an array of multiple through holes is formed on the inner plate.

[0021] In some embodiments, the inner plates are spaced apart above the vapor-deposited material along the height direction of the crucible.

[0022] In some embodiments, the crucible includes:

[0023] ontology;

[0024] The cover is placed on the body, and the nozzle is placed on the cover. A part of the body and the inner plate enclose a heating chamber, and another part of the body, the inner plate and the cover together enclose a homogeneous chamber. The heating chamber and the homogeneous chamber are connected through a through hole on the inner plate.

[0025] Along the height direction of the crucible, the homogenization chamber is located above the heating chamber;

[0026] And / or, along the height direction of the crucible, the distance between the lowest position of the blocking structure and the inner plate is less than the height of the homogenizing cavity.

[0027] Secondly, this application provides a vapor deposition system, including a nozzle device for vapor deposition.

[0028] This vapor deposition nozzle device, with its crucible, heats the vapor deposition material placed in the heating chamber, resulting in more uniform heating. The heated material vaporizes into a gaseous state, which flows through the heating chamber into the homogenization chamber, then through the nozzle inlet and outlet. In this configuration, the flow velocity and pressure fluctuations of the gaseous material within the homogenization chamber are more stable, leading to more consistent flow velocity and flow rate. Furthermore, the blocking structure effectively regulates the flow within the homogenization chamber. A portion of the gaseous vapor deposition material is blocked, and the blocked gaseous vapor deposition material circulates within the homogenization chamber. The remaining unblocked portion of the gaseous vapor deposition material is guided to the inlet end through the blocking structure and then flows out to the outside of the crucible through the outlet end. In this process, the blocking structure can block particles with large incident angles, concentrate the exit particle angle, and reduce the shadow effect. This reduces the range of the exit angle at the nozzle outlet end, thereby making the thickness of the vapor deposition material sprayed onto the substrate more uniform. This can improve the problem of uneven pixel thickness on the glass substrate.

[0029] Therefore, the nozzle device for vapor deposition provided in the embodiments of this application can solve the problem of uneven vapor deposition during the vapor deposition process. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 This is a schematic diagram of the main structure of the nozzle device for vapor deposition provided in the embodiments of this application.

[0032] Explanation of reference numerals in the attached figures:

[0033] 100-Crucible; 101-Heating chamber; 102-Homogenization chamber; 103-Body; 104-Lid;

[0034] 200 - Nozzle; 201 - Inlet end; 202 - Outlet end;

[0035] 300-blocking structure;

[0036] 400-Guide Component;

[0037] 500 - Inner panel. Detailed Implementation

[0038] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0039] In the prior art, due to the limitations of the aperture size and thickness of the vapor deposition mask (usually tens of micrometers), the vapor deposition material will produce a shadow effect when passing through the mask, that is, uneven thickness or missing areas formed at the edge of the pixel due to the material vapor blocking.

[0040] Based on this, the inventors believe that the shadow effect exists for two reasons. First, conventional nozzle outlet orifices cannot effectively limit the ejection angle of material vapor, resulting in dispersed particle distribution and a significant shadow effect. Second, existing structures lack a screening mechanism for particles deviating from the vertical direction, allowing high-angle particles to still pass through the nozzle outlet, increasing the shadow area at the pixel edges.

[0041] To overcome the shortcomings of existing technologies, a crucible is incorporated to heat the vapor deposition material placed within the heating chamber, resulting in more uniform heating. The heated material vaporizes into a gaseous state, which flows through the heating chamber into the homogenization chamber. After passing through the nozzle inlet, it exits through the nozzle outlet. In this configuration, the flow velocity and pressure fluctuations of the gaseous material within the homogenization chamber are more stable, leading to more consistent flow velocity and flow rate of the material ejected from the nozzle. Furthermore, the blocking structure effectively regulates the flow within the homogenization chamber. A portion of the gaseous vapor deposition material is blocked, and the blocked gaseous vapor deposition material circulates within the homogenization chamber. The remaining unblocked portion of the gaseous vapor deposition material is guided to the inlet end through the blocking structure and then flows out to the outside of the crucible through the outlet end. In this process, the blocking structure can block particles with large incident angles, concentrate the exit particle angle, and reduce the shadow effect. This reduces the range of the exit angle at the nozzle outlet end, thereby making the thickness of the vapor deposition material sprayed onto the substrate more uniform. This can improve the problem of uneven pixel thickness on the glass substrate.

[0042] Therefore, the nozzle device for vapor deposition provided in the embodiments of this application can solve the problem of uneven vapor deposition during the vapor deposition process.

[0043] The contents of this application will now be described in detail with reference to the accompanying drawings, so that those skilled in the art can have a clearer and more detailed understanding of the contents of this application.

[0044] like Figure 1 As shown in the figure, this application provides a nozzle device for vapor deposition, including: a crucible 100 and a nozzle 200. The crucible 100 has a heating chamber 101, a homogenizing chamber 102 and a blocking structure 300 that are connected. The heating chamber 101 is used to contain vapor deposition material. The nozzle 200 has an inlet end 201 and an outlet end 202 that are connected. The inlet end 201 is connected to the homogenizing chamber 102. The vapor deposition material is used to be discharged to the outside of the crucible 100 through the outlet end 202. The blocking structure 300 is located in the homogenizing chamber 102 and is connected to the inlet end 201. The blocking structure 300 is used to block a portion of the vapor deposition material in the homogenizing chamber 102. The blocking structure 300 is also used to guide another portion of the vapor deposition material in the homogenizing chamber 102 to the inlet end 201.

[0045] The following sections provide detailed descriptions of the specific structures of the nozzle device and the vapor deposition system for vapor deposition, as well as various possible implementation methods.

[0046] It should be noted that the nozzle 200 has a flow channel inside, with the inlet end 201 and the outlet end 202 located at opposite ends of the flow channel, and both the inlet end 201 and the outlet end 202 are connected to the flow channel.

[0047] It should be noted that the vapor deposition material is heated in the heating chamber 101 and vaporized into a gaseous vapor deposition material, which can flow into the homogenization chamber 102.

[0048] It should be noted that nozzle 200 can be a single nozzle or a group of nozzles in a row. There are no restrictions here, and the selection can be made according to the actual use requirements.

[0049] It should be noted that the blocking structure 300 provided in the embodiments of this application has a variety of different arrangements, and the arrangements of the blocking structure 300 will be illustrated below.

[0050] In one embodiment, the blocking structure 300 extends along the height direction of the crucible 100.

[0051] It is understood that, through the above-described embodiments, the gaseous vapor deposition material can flow within the vertical obstruction structure 300, which can maximize the consistency between the movement direction and deposition direction of the gaseous vapor deposition material, and also make the vertical and vertical directions of the gaseous vapor deposition material consistent with the thermal buoyancy direction. This makes the flow of the gaseous vapor deposition material most stable, less prone to unnecessary eddies or backflow, ensuring a stable evaporation rate. It also reduces the divergence angle of the gaseous vapor deposition material ejected from the nozzle 200, thereby making the coating thickness of the gaseous vapor deposition material ejected from the nozzle 200 on the substrate plane more uniform.

[0052] In some possible implementations, the blocking structure 300 is arranged to extend along the height direction intersecting the crucible 100.

[0053] It is understood that, through the above embodiments, inclined gaseous vapor deposition materials can be directly deposited on the side or a specific angle region of the substrate after passing through the nozzle 200, for fabricating devices with three-dimensional structures, or for non-perpendicular coating without moving the substrate. Furthermore, it allows for coatings with a stepped gradient thickness on the substrate surface.

[0054] Furthermore, the direction intersecting the height direction of the crucible 100 can be any direction intersecting the height direction of the crucible 100, and the intersection angle can be any value greater than 0 degrees and less than 180 degrees, or it can be an irregular direction, or it can be an arc-shaped direction. There are no restrictions here, and it can be selected according to the actual use requirements.

[0055] It is understandable that the specific orientation of the blocking structure 300 is not restricted and can be selected according to actual usage requirements.

[0056] It should be noted that the blocking structure 300 has several different configuration methods, and the configuration methods of the blocking structure 300 will be illustrated with examples below.

[0057] In one embodiment, at least a portion of the length of the nozzle 200 extends through the homogenization chamber 102, and the outer peripheral wall of the nozzle 200 located in the homogenization chamber 102 forms a blocking structure 300.

[0058] It is understood that, through the above-described embodiments, the nozzle 200 can extend downwards to directly form a blocking structure 300, allowing the outer peripheral wall of the nozzle 200 to block a portion of the vapor deposition material within the homogenization chamber 102. Furthermore, another portion of the vapor deposition material within the homogenization chamber 102 can be guided from the outlet end 202 to the inlet end 201 located within the homogenization chamber 102. This reduces the divergence angle of the gaseous vapor deposition material ejected from the nozzle 200, resulting in a more uniform coating thickness of the gaseous vapor deposition material on the substrate plane.

[0059] In some possible embodiments, the vapor deposition nozzle device further includes: a guide 400, one end of which is connected to the inlet end 201 and the other end of which is connected to the homogenization chamber 102. The guide 400 is used to guide the vapor deposition material in the homogenization chamber 102 to the inlet end 201, and the guide 400 forms a blocking structure 300.

[0060] It is understood that, through the above-described embodiments, the gaseous vapor deposition material in the homogenization chamber 102 can be guided to the inlet end 201 by the guide member 400 and discharged to the outside of the crucible 100 through the outlet end 202 of the nozzle 200. In this case, the outer peripheral wall of the guide member 400 can block a portion of the gaseous vapor deposition material in the homogenization chamber 102, so that the divergence angle of the gaseous vapor deposition material ejected from the nozzle 200 is reduced, thereby making the vapor deposition material ejected from the nozzle 200 more uniformly coated on the substrate plane.

[0061] Understandably, there are no restrictions on the specific configuration of the blocking structure 300; it can be selected according to actual usage requirements.

[0062] It should be noted that the guide 400 and the nozzle 200 are coaxially arranged, and the guide 400 and the nozzle 200 are sealed together.

[0063] It is understood that, through the above-described embodiments, the flow separation and eddies of the gaseous vapor deposition material between the guide member 400 and the nozzle 200 can be eliminated, thereby making the flow of the gaseous vapor deposition material between the guide member 400 and the nozzle 200 more stable, thereby improving the operational stability of the vapor deposition nozzle device, and also reducing the occurrence of leakage of vapor deposition material between the guide member 400 and the nozzle 200, thereby improving the safety of the vapor deposition nozzle device.

[0064] The vapor deposition nozzle device provided in the embodiments of this application further includes: an inner plate 500, which is disposed inside the crucible 100. A through hole is provided on the inner plate 500. The heating chamber 101 and the homogenization chamber 102 are connected through the through hole. Along the height direction of the crucible 100, the lowest position of the through hole is higher than the highest position of the vapor deposition material.

[0065] It is understandable that by setting the inner plate 500, it can act as a physical filter. The gaseous vapor deposition material in the heating chamber 101 can pass through the through hole into the homogenization chamber 102. Larger droplets or particles in the heating chamber 101 will be blocked by the plate body of the inner plate 500, thereby ensuring that the homogenization chamber 102 is a gaseous vapor deposition material. In addition, the setting of the inner plate 500 can also stabilize the flow rate of the gaseous vapor deposition material, thereby making the gaseous vapor deposition material sprayed from the nozzle 200 more uniform in coating thickness on the substrate plane.

[0066] Furthermore, multiple through holes are provided, and multiple through holes are arranged on the inner panel 500.

[0067] It is understandable that by increasing the number of through holes, the pressure difference between the heating chamber 101 and the homogenizing chamber 102 can be reduced, so that the vapor deposition material in the crucible 100 is more stable. In addition, the array of through holes can make the gaseous vapor deposition material in the homogenizing chamber 102 more evenly distributed, so that the flow rate of the gaseous vapor deposition material flowing to the nozzle 200 is more uniform.

[0068] It should be noted that the number of through holes can be one, two, three, four, or any other number greater than or equal to one. There is no restriction here, and the number can be selected according to actual usage requirements.

[0069] It should be noted that the inner panel 500 has several different installation methods, which will be illustrated with examples below.

[0070] In one embodiment, the inner plate 500 is spaced above the vapor-deposited material along the height direction of the crucible 100.

[0071] That is, the inner plate 500 is spaced apart above the bottom wall of the crucible 100.

[0072] It is understood that, through the above implementation method, the heating chamber 101 can be located below the homogenization chamber 102. When the vapor deposition material in the heating chamber 101 is heated, the flow direction of the gaseous vapor deposition material after heating and vaporization can be aligned with the direction of thermal buoyancy, thereby making the flow of the gaseous vapor deposition material most stable.

[0073] In some possible implementations, the heating chamber 101 and the homogenizing chamber 102 are respectively located at both ends of the inner plate 500 along the height direction intersecting the crucible 100, that is, the inner plate 500 intersects and connects with the bottom wall of the crucible 100. In this case, a through hole is provided at the upper end of the inner plate 500, and the lowest position of the through hole is higher than the highest position of the vapor-deposited material.

[0074] It is understood that, through the above implementation method, after the vapor deposition material in the heating chamber 101 is heated and vaporized, the gaseous vapor deposition material can first reach the top of the heating chamber 101, and enter the homogenization chamber 102 after passing through the through hole. This can suppress the instantaneous pressure fluctuation of the gaseous vapor deposition material, so that the pressure of the gaseous vapor deposition material flowing to the nozzle 200 is more stable.

[0075] Understandably, there are no restrictions on the specific installation method of the inner panel 500; it can be selected according to actual usage needs.

[0076] The crucible 100 provided in the embodiments of this application includes: a body 103 and a cover 104. The cover 104 covers the body 103, and the nozzle 200 is disposed on the cover 104. A portion of the body 103 and the inner plate 500 enclose a heating chamber 101, and another portion of the body 103, the inner plate 500 and the cover 104 together enclose a homogenizing chamber 102. The heating chamber 101 and the homogenizing chamber 102 are connected through a through hole on the inner plate 500.

[0077] It is understood that, through the above implementation method, the crucible 100 and the inner plate 500 can be combined to form a heating chamber 101 and a homogenizing chamber 102. The heating chamber 101 and the homogenizing chamber 102 can be connected through a through hole, so that the gaseous vaporized material heated and vaporized in the heating chamber 101 can enter the homogenizing chamber 102 through the through hole.

[0078] It should be noted that the heating cavity 101 is a cavity formed by the lower section of the main body 103 and the bottom surface of the inner plate 500.

[0079] It should be noted that the homogenous cavity 102 is a cavity formed by the upper section of the body 103, the top surface of the inner plate 500, and the bottom surface of the cover 104.

[0080] In one embodiment, the homogenization chamber 102 is located above the heating chamber 101 along the height direction of the crucible 100.

[0081] It is understood that, through the above implementation method, the heating chamber 101 can be located below the homogenization chamber 102. When the vapor deposition material in the heating chamber 101 is heated, the flow direction of the gaseous vapor deposition material after heating and vaporization is consistent with the direction of thermal buoyancy, thereby making the flow of the gaseous vapor deposition material most stable.

[0082] In one embodiment, the distance between the lowest position of the blocking structure 300 and the inner plate 500 along the height direction of the crucible 100 is less than the height of the homogenizing cavity 102.

[0083] It is understood that, through the above implementation method, the blocking structure 300 can block a portion of the gaseous vapor deposition material in the homogenization cavity 102. The blocked gaseous vapor deposition material will circulate in the homogenization cavity 102, while the unblocked portion of the gaseous vapor deposition material can be guided through the blocking structure 300 to the inlet end 201 and further flow out to the outside of the crucible 100 through the outlet end 202. In this process, the range of the emission angle of the outlet end 202 of the nozzle 200 can be reduced, thereby making the thickness of the vapor deposition material sprayed onto the substrate more uniform, which can improve the problem of uneven thickness of pixels on the glass substrate.

[0084] In one embodiment, the homogenizing cavity 102 is located above the heating cavity 101 along the height direction of the crucible 100, and the distance between the lowest position of the blocking structure 300 and the inner plate 500 along the height direction of the crucible 100 is less than the height of the homogenizing cavity 102.

[0085] It is understood that, through the above-described embodiments, the heating chamber 101 can be positioned below the homogenizing chamber 102. When the vapor-deposited material in the heating chamber 101 is heated, the flow direction of the heated and vaporized gaseous vapor-deposited material is aligned with the direction of thermal buoyancy, thereby ensuring the most stable flow of the gaseous vapor-deposited material. Furthermore, the blocking structure 300 can block a portion of the gaseous vapor-deposited material within the homogenizing chamber 102. The blocked gaseous vapor-deposited material will circulate within the homogenizing chamber 102, while the remaining unblocked portion can be guided through the blocking structure 300 to the inlet end 201 and further out through the outlet end 202 to the outside of the crucible 100. During this process, the range of the exit angle at the outlet end 202 of the nozzle 200 can be reduced, resulting in a more uniform thickness of the vapor-deposited material sprayed onto the substrate, thus improving the problem of uneven pixel thickness on the glass substrate.

[0086] Embodiments of this application provide a vapor deposition system, including a vapor deposition nozzle device provided in any of the above embodiments.

[0087] It should be noted that the terms "one embodiment," "embodiment," "exemplary embodiment," "some embodiments," etc., mentioned in the specification indicate that the described embodiment may include a specific feature, structure, or characteristic, but not every embodiment necessarily includes that specific feature, structure, or characteristic. Furthermore, such phrases do not necessarily refer to the same embodiment. Moreover, when a specific feature, structure, or characteristic is described in connection with an embodiment, implementing such a feature, structure, or characteristic in conjunction with other embodiments, whether explicitly described or not, is within the knowledge scope of those skilled in the art.

[0088] Generally speaking, terms should be understood at least in part by their use in context. For example, at least in part by context, the term "one or more" as used in the text can be used to describe any feature, structure, or characteristic of the singular meaning, or a combination of features, structures, or characteristics of the plural meaning. Similarly, at least in part by context, terms such as "a" or "the" can also be understood to convey either singular or plural usage.

[0089] It should be readily understood that the terms “on,” “above,” and “on top of” in this application should be interpreted in the broadest possible sense, such that “on” means not only “directly on something” but also “on something” with an intermediate feature or layer therebetween, and that “above” or “on top of” means not only “on something” but also “on something” without an intermediate feature or layer therebetween (i.e., directly on something).

[0090] Furthermore, for ease of explanation, spatially relative terms such as "below," "below," "under," "above," and "above" may be used to describe the relationship of one element or feature relative to other elements or features as shown in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation other than those shown in the figures. The device may have other orientations (rotated 90° or in other orientations), and the spatially relative descriptive terms used herein may be interpreted accordingly.

[0091] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A nozzle device for vapor deposition, characterized in that, include: A crucible (100) having a communicating heating chamber (101) and a homogenizing chamber (102), the heating chamber (101) being used to contain vapor deposition material; The nozzle (200) has a communicating inlet end (201) and outlet end (202), the inlet end (201) being connected to the homogenization chamber (102), and the vapor deposition material being discharged to the outside of the crucible (100) through the outlet end (202); A blocking structure (300) is located inside the homogenization cavity (102) and communicates with the inlet end (201). The blocking structure (300) is used to block a portion of the vapor-deposited material in the homogenization cavity (102) and to guide another portion of the vapor-deposited material in the homogenization cavity (102) to the inlet end (201).

2. The nozzle device for vapor deposition according to claim 1, characterized in that, The blocking structure (300) extends along the height direction of the crucible (100).

3. The nozzle device for vapor deposition according to claim 2, characterized in that, At least a portion of the length of the nozzle (200) extends through the homogenizing chamber (102), and the outer peripheral wall of the nozzle (200) within the homogenizing chamber (102) forms the blocking structure (300).

4. The nozzle device for vapor deposition according to claim 2, characterized in that, Also includes: A guide (400) is provided, one end of which is connected to the inlet end (201) and the other end of which is connected to the homogenization chamber (102). The guide (400) is used to guide the vapor-deposited material in the homogenization chamber (102) to the inlet end (201). The guide (400) forms the blocking structure (300).

5. The nozzle device for vapor deposition according to claim 4, characterized in that, The guide (400) is coaxially arranged with the nozzle (200), and the guide (400) is sealed to the nozzle (200).

6. The nozzle apparatus for vapor deposition according to any one of claims 1-5, characterized in that, Also includes: An inner plate (500) is disposed inside the crucible (100), and a through hole is provided on the inner plate (500). The heating chamber (101) and the homogenizing chamber (102) are connected through the through hole. Along the height direction of the crucible (100), the lowest position of the through hole is higher than the highest position of the vapor-deposited material.

7. The nozzle device for vapor deposition according to claim 6, characterized in that, Multiple through holes are provided, and the array of multiple through holes is formed on the inner plate (500).

8. The nozzle device for vapor deposition according to claim 6, characterized in that, Along the height direction of the crucible (100), the inner plate (500) is spaced above the vapor-deposited material.

9. The nozzle apparatus for vapor deposition according to any one of claims 1-5, characterized in that, The crucible (100) includes: Ontology(103); A cover (104) is placed over the body (103), and a nozzle (200) is disposed on the cover (104). A portion of the body (103) and the inner plate (500) enclose the heating chamber (101), and another portion of the body (103), the inner plate (500), and the cover (104) together enclose the homogenizing chamber (102). The heating chamber (101) and the homogenizing chamber (102) are connected through a through hole on the inner plate (500). Along the height direction of the crucible (100), the homogenizing chamber (102) is located above the heating chamber (101); And / or, along the height direction of the crucible (100), the distance between the lowest position of the blocking structure (300) and the inner plate (500) is less than the height of the homogenizing cavity (102).

10. A vapor deposition system, characterized in that, Includes a nozzle device for vapor deposition according to any one of claims 1-9.

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