Safe working area measurement method, electronic device, and readable storage medium

Abstract

The application provides a safe working area measurement method, an electronic device and a readable storage medium. The method comprises the following steps: determining a starting drain scanning voltage corresponding to a device to be measured, wherein the starting drain scanning voltage is equal to a preset multiple of a power supply voltage, and the preset multiple is greater than or equal to 0.5 times and less than 1 times; according to a scanning rule that the scanning voltage is gradually increased from the starting drain scanning voltage until the device to be measured is broken down, the drain of the device to be measured is sequentially applied with the scanning voltage, and the drain current under each scanning voltage is measured; and a safe working area curve of the device to be measured is drawn according to the corresponding relationship between the measured drain current and the drain voltage. The application can not only improve the measurement efficiency of the safe working area of the device, but also avoid the leakage and damage caused by the long-time application of high voltage to the needle card, so that the needle card can be protected and the measurement risk can be reduced.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing and manufacturing technology, and in particular to a method for measuring a safe working area, an electronic device, and a readable storage medium. Background Technology

[0002] Current techniques for testing the safe operating area (SOA) of MOS (metal-oxide-semiconductor) devices typically employ a full voltage range scan to obtain the drain current Id corresponding to different drain voltages Vd. Please refer to... Figure 1 This is a schematic diagram of the safe operating area of ​​a MOS device using existing technology. In the diagram, the supply voltage Vdd is equal to 20V. Figure 1 As shown, a complete safe work area typically includes the following three areas:

[0003] Region 1 (0V < Drain voltage Vd ≤ Supply voltage Vdd): This region typically does not contain critical information regarding device performance degradation, therefore it does not require special attention. Measurement time in this region accounts for approximately 20% of the total measurement time.

[0004] Region 2 (Supply voltage Vdd < Drain voltage Vd ≤ Breakdown voltage VB): The curve in this region typically curves gradually and eventually fails at the breakdown voltage VB. The curve shape and the magnitude of the breakdown voltage VB in this region are important characterizations of the device and require close attention. Measurement time in this region accounts for approximately 10% of the total measurement time.

[0005] Region 3 (Drain voltage Vd > Breakdown voltage VB): Once the drain voltage Vd exceeds the breakdown voltage VB, the device has failed. The curve in this region is no longer meaningful. However, the measurement speed will drop significantly due to the extremely low current level in this region, which will result in the measurement time accounting for about 70% of the total measurement time.

[0006] Furthermore, once the drain voltage Vd exceeds the breakdown voltage VB, the device will open-circuit. At this point, voltage will remain applied to the pin clip, preventing the formation of a complete circuit. This makes it easy for static electricity to accumulate on the pin clip, ultimately leading to increased leakage current (e.g., ...). Figure 2 As shown in the diagram, which illustrates the leakage current of the needle clip under different voltages, the needle clip can also be damaged, resulting in increased leakage current or even needle burning.

[0007] It should be noted that the information disclosed in the background section of this invention is intended only to enhance the understanding of the general background of this invention, and should not be construed as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Summary of the Invention

[0008] The purpose of this invention is to provide a safe operating area measurement method, electronic device, and readable storage medium, which can not only improve the measurement efficiency of the safe operating area of ​​the device, but also avoid leakage and damage caused by applying high voltage to the pin card for a long time, thereby protecting the pin card and reducing measurement risks.

[0009] To achieve the above objectives, the present invention provides a method for measuring the safe operating area. The method includes: determining the starting drain scan voltage corresponding to the device under test (DUT), wherein the starting drain scan voltage is equal to a preset multiple of the supply voltage, and the preset multiple is greater than or equal to 0.5 times and less than 1 times; applying a scan voltage to the drain of the DUT successively according to a scanning rule that gradually increases the scan voltage from the starting drain scan voltage until the DUT fails due to breakdown, and measuring the drain current at each scan voltage; and plotting the safe operating area curve of the DUT based on the correspondence between the measured drain current and drain voltage.

[0010] Optionally, if the drain current measured at the current scanning voltage satisfies the following relationship with the drain current measured at the previous scanning voltage, then the device under test is determined to have experienced a breakdown failure:

[0011] or

[0012] in, This is the drain current measured at the current scanning voltage. This is the drain current measured at the previous scanning voltage.

[0013] Optionally, the safe operating area measurement method provided by the present invention further includes: before applying the initial drain scanning voltage to the drain of the device under test, applying a preset low drain voltage to the drain of the device under test to measure the corresponding initial linear region drain current; for each scanning voltage, after measuring the drain current under that scanning voltage, reducing the drain voltage of the device under test from the scanning voltage to the preset low drain voltage to measure the corresponding linear region drain current.

[0014] Optionally, if the currently measured linear region drain current and the previously measured linear region drain current satisfy the following relationship, then the device under test is determined to have experienced a breakdown failure:

[0015] or

[0016] in, This represents the drain current in the linear region as currently measured. This is the drain current in the linear region obtained from the previous measurement.

[0017] Optionally, the safe operating area measurement method provided by the present invention further includes: determining the linear current decay ratio of the device under test based on the ratio of the drain current of the previous linear region when the device under test fails to the drain current of the initial linear region.

[0018] Optionally, the safe operating area measurement method provided by the present invention further includes: measuring the substrate current under each scanning voltage; and determining the substrate current ratio at the time of breakdown of the device under test based on the ratio of the substrate current to the drain current under the previous scanning voltage when the device under test fails due to breakdown.

[0019] Optionally, the safe operating area measurement method provided by the present invention further includes: determining the drain current degradation ratio of the device under test based on the ratio of the drain current under the previous scanning voltage when the device under test fails due to breakdown to the drain current under the scanning voltage equal to the supply voltage.

[0020] To achieve the above objectives, the present invention also provides an electronic device, including a processor and a memory, wherein the memory stores a computer program, and when the computer program is executed by the processor, it implements the safe working area measurement method described above.

[0021] To achieve the above objectives, the present invention also provides a readable storage medium storing a computer program, which, when executed by a processor, implements the secure working area measurement method described above.

[0022] Compared with existing technologies, the safe operating area measurement method, electronic device, and readable storage medium provided by this invention have the following unexpected technical effects: By setting the initial value of the drain voltage of the device under test (DUT) (i.e., the initial drain scan voltage) to 0.5 to 1 times (e.g., 0.8 times) of the supply voltage, this invention can save measurement time while ensuring that the breakdown voltage of the DUT can be measured, thereby effectively improving the measurement efficiency of the safe operating area of ​​the DUT. Furthermore, by stopping the application of the scan voltage to the drain of the DUT after determining that the DUT has experienced a breakdown failure (i.e., stopping the test), this invention not only further saves measurement time but also avoids leakage and damage caused by prolonged application of high voltage to the probe card, thereby protecting the probe card and reducing measurement risks. Furthermore, by measuring the initial linear region drain current at a preset low drain voltage (e.g., 0.1V) before formally applying a high-voltage scan (e.g., 0.8 times the supply voltage Vdd), this invention allows for the measurement of the linear region drain current, representing the channel's most original and healthiest state, even before the device is subjected to high-voltage stress. This provides a zero-stress reference point for subsequent quantitative assessment of the channel's degradation under high voltage. Additionally, by reducing the drain current of the device under test from the scan voltage to the preset low drain voltage after measuring the drain current at each scan voltage, and then measuring the corresponding linear region drain current, this invention can capture progressive damage that may occur before the device reaches its final breakdown point, thus providing data support for analyzing the device's degradation mechanism. Attached Figure Description

[0023] Figure 1 A schematic diagram for testing the safe operating area of ​​a MOS device using existing technology.

[0024] Figure 2 This is a schematic diagram showing the leakage current of the pin under different voltages.

[0025] Figure 3 A flowchart of a safe working area measurement method provided in one embodiment of the present invention.

[0026] Figure 4 This is a comparison chart of the safe working area curve measured using the safe working area measurement method provided by this invention and the safe working area curve measured using existing technology.

[0027] Figure 5 This is a block diagram of an electronic device provided according to an embodiment of the present invention. Detailed Implementation

[0028] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, further illustrates the safe working area measurement method, electronic device, and readable storage medium proposed in this invention. The advantages and features of this invention will become clearer from the following description. It should be understood that the structures, proportions, sizes, etc., illustrated in the accompanying drawings are merely for illustrative purposes and to facilitate understanding and reading by those skilled in the art. They are not intended to limit the implementation conditions of this invention. Any modifications to the structure, changes in proportions, or adjustments to the size, provided they produce the same or similar effects and achieve the same objectives as this invention, should still fall within the scope of the technical content disclosed in this invention.

[0029] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. The singular forms "a," "an," and "the" include plural objects, and the term "or" is generally used to include the meaning of "and / or."

[0030] Furthermore, in the description of this specification, the reference to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., means that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. Furthermore, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0031] The core idea of ​​this invention is to provide a safe operating area measurement method, electronic device, and readable storage medium, which can not only improve the measurement efficiency of the safe operating area of ​​the device, but also avoid leakage and damage caused by applying high voltage to the pin card for a long time, thereby protecting the pin card and reducing measurement risks.

[0032] To achieve the above-mentioned goals, this invention provides a method for measuring the safe working area. Please refer to [the relevant documentation]. Figure 3 This is a flowchart of a safe working area measurement method provided by an embodiment of the present invention. For example... Figure 3As shown, the safe operating area measurement method provided by the present invention includes the following steps: Step S100: Determine the starting drain scan voltage corresponding to the device under test, wherein the starting drain scan voltage is equal to a preset multiple of the supply voltage, and the preset multiple is greater than or equal to 0.5 times and less than 1 time; Step S200: Apply scan voltage to the drain of the device under test successively according to the scanning rule of gradually increasing the scan voltage from the starting drain scan voltage until the device under test fails due to breakdown, and measure the drain current under each scan voltage; Step S300: Plot the safe operating area curve of the device under test according to the correspondence between the measured drain current and drain voltage.

[0033] Therefore, by setting the initial value of the drain voltage of the device under test (i.e., the initial drain scanning voltage Vd(1)) to 0.5 to 1 times (e.g., 0.8 times) the supply voltage Vdd (e.g., 20V), the present invention can save measurement time while ensuring that the breakdown voltage of the device under test can be measured, thereby effectively improving the measurement efficiency of the safe operating area of ​​the device under test. In addition, by stopping the application of scanning voltage to the drain of the device under test after determining that the device under test has broken down (i.e., stopping the test), the present invention can not only further save measurement time, but also avoid leakage and damage caused by applying high voltage to the probe card for a long time, thereby protecting the probe card, reducing measurement risk, and thus reducing high-risk safe operating area test items to low-risk measurement items, and reducing the corresponding measurement control risk to low-risk measurement control, greatly improving measurement efficiency and saving manpower.

[0034] Specifically, the initial drain scan voltage Vd(1) of the device under test (DUT) and the supply voltage Vdd of the DUT satisfy the following relationship:

[0035]

[0036] The parameter m satisfies: 0.5 ≤ m < 1.

[0037] Please continue to refer to this. Figure 4 This is a comparison chart of the safe working area curve measured using the safe working area measurement method provided by this invention and the safe working area curve measured using existing technology. Figure 4As shown, this invention sets the initial value of the drain voltage of the device under test (DUT) (i.e., the initial drain scan voltage Vd(1)) to 0.5 to 1 times (e.g., 0.8 times) the supply voltage Vdd (e.g., 20V). This allows for the measurement of the DUT's breakdown voltage while saving measurement time, thereby effectively improving the measurement efficiency of the DUT's safe operating area. Furthermore, this invention further saves measurement time by stopping the application of the scan voltage to the drain of the DUT after determining that the DUT has experienced a breakdown failure (i.e., stopping the test). Moreover, this invention can reduce the measurement time of the device's safe operating area from 6 seconds to 0.5 seconds, thereby saving 90% of the measurement time.

[0038] In some exemplary embodiments, if the drain current measured at the current scanning voltage satisfies the following relationship with the drain current measured at the previous scanning voltage, then the device under test is determined to have experienced a breakdown failure:

[0039] or

[0040] in, This is the drain current measured at the current scanning voltage. This is the drain current measured at the previous scanning voltage.

[0041] Therefore, by using the above-mentioned breakdown failure judgment rules, two distinct breakdown failure modes can be identified. Specifically, by... The system can determine whether the device under test (DUT) has experienced a breakdown failure in real time, accurately identifying whether the DUT has suffered a short-circuit breakdown failure. The device under test can be determined to have experienced a breakdown failure in real time. It can accurately determine whether the device under test has experienced an open-circuit breakdown failure in the first instance, thereby effectively avoiding missed detections and further reducing measurement risks.

[0042] In some exemplary embodiments, the safe operating area measurement method provided by the present invention further includes: using the previous scan voltage when the device under test (DUT) experiences a breakdown failure as the breakdown voltage of the DUT.

[0043] Since breakdown voltage is usually defined as the highest voltage that a device can withstand, the true withstand voltage limit of the device can be more accurately reflected by taking the previous scan voltage (drain voltage) when the device under test fails due to breakdown.

[0044] Specifically, the formula for calculating the breakdown voltage of the device under test is as follows:

[0045]

[0046] in, The breakdown voltage of the device under test. This is the previous scan voltage (drain voltage) when the device under test (DUT) experiences a breakdown failure.

[0047] In some exemplary embodiments, the safe operating area measurement method provided by the present invention further includes: applying a preset low drain voltage to the drain of the device under test before applying the initial drain scan voltage to the drain of the device under test, so as to measure the corresponding initial linear region drain current; for each scan voltage, after measuring the drain current at the scan voltage, reducing the drain voltage of the device under test from the scan voltage to the preset low drain voltage, so as to measure the corresponding linear region drain current.

[0048] Therefore, by measuring the initial linear region drain current at a preset low drain voltage (e.g., 0.1V) before formally applying a high voltage (e.g., 0.8 times the supply voltage Vdd) for scanning, the drain current is obtained first. This method allows for the measurement of the linear region drain current, representing the channel's most original and healthiest state, even before the device has been subjected to high-voltage stress. This provides a zero-stress reference point for subsequent quantitative assessment of channel degradation under high voltage. Furthermore, by measuring the drain current at each scan voltage and then reducing the drain voltage of the device under test to a preset low drain voltage to measure the corresponding linear region drain current, it is possible to capture progressive damage that may occur before the device reaches its final breakdown point. This provides data support for analyzing the device's degradation mechanism.

[0049] In some exemplary embodiments, if the currently measured linear region drain current and the previously measured linear region drain current satisfy the following relationship, the device under test is determined to have experienced a breakdown failure:

[0050] or

[0051] in, This represents the drain current in the linear region as currently measured. This is the drain current in the linear region obtained from the previous measurement.

[0052] Because during open-circuit breakdown (such as metal melting or channel burnout), at the moment of breakdown, the drain current... It may experience a brief oscillation or a slow decline, leading to a delay in judgment. The drain current in the linear region... It is measured at a preset low drain voltage (e.g., 0.1V), and it can directly reflect whether the channel is physically connected. Once the channel is burned out, the drain current in the linear region will decrease. The drain current in the linear region will drop from its normal value to zero or near zero instantly. The basis for judging the open circuit (i.e.) Anomalies can be detected in the first low-voltage measurement window after the channel is disconnected, compared to waiting for the drain current at the next high-voltage point (scanning point). The measurement can terminate the test more quickly, further reducing the time of high voltage damage to the pin clip. Furthermore, due to the linear region drain current... A sudden surge of 2 times under low pressure (i.e.) This usually indicates damage to the gate oxide layer or the presence of a leakage path, thus identifying failures caused by gate oxide problems. In summary, this invention, based on drain current... Based on the breakdown failure judgment criteria, a method based on the drain current in the linear region is introduced. The established criteria for determining breakdown failure can greatly improve the comprehensiveness, sensitivity, and robustness of device breakdown failure assessment.

[0053] In some exemplary embodiments, the safe operating area measurement method provided by the present invention further includes: determining the linear current decay ratio of the device under test based on the ratio of the drain current of the previous linear region when the device under test fails to the drain current of the initial linear region.

[0054] Therefore, by determining the linear current decay ratio of the device under test (DUT) based on the ratio of the drain current in the previous linear region to the drain current in the initial linear region when the DUT experiences breakdown failure, not only can individual differences be eliminated and fair comparison of performance between different devices be achieved, but also the linear current decay ratio can be introduced to quantitatively characterize the degree of channel damage of the device, thereby providing a clear quantitative indicator for process improvement.

[0055] Specifically, the formula for calculating the linear current decay ratio of the device under test is as follows:

[0056]

[0057] in, This refers to the linear current decay ratio of the device under test. This refers to the drain current in the previous linear region when the device under test (DUT) experiences a breakdown failure. The initial linear region drain current of the device under test is denoted as .

[0058] In some exemplary embodiments, the safe operating area measurement method provided by the present invention further includes: measuring the substrate current under each scanning voltage; and determining the substrate current ratio at the time of breakdown of the device under test based on the ratio of the substrate current to the drain current under the previous scanning voltage when the device under test fails due to breakdown.

[0059] Because during the on-state operation of a MOS device, the substrate current... Primarily caused by impact ionization in the high electric field region near the drain, this invention measures the substrate current at each scan voltage and determines the breakdown current ratio of the device under test (DUT) based on the ratio of the substrate current to the drain current at the previous scan voltage when the DUT fails. This breakdown current ratio directly quantifies the severity of impact ionization at the breakdown critical point (a high breakdown current ratio indicates that a large number of electron-hole pairs have been generated inside the device before breakdown, a direct precursor to avalanche breakdown and the onset of parasitic bipolar transistor effects), thus enabling precise classification of breakdown types. Furthermore, since the breakdown current ratio is closely related to the maximum electric field strength near the drain, an abnormally high breakdown current ratio may indicate an overly concentrated electric field, easily leading to early breakdown. Therefore, by comparing the breakdown current ratios of different designs, engineers can determine which doping distribution or structure can more effectively suppress impact ionization.

[0060] Specifically, the formula for calculating the percentage of substrate current during breakdown of the device under test is as follows:

[0061]

[0062] in, This represents the percentage of substrate current during breakdown of the device under test. This refers to the substrate current at the previous scan voltage when the device under test (DUT) experiences breakdown failure. This is the drain current at the previous scan voltage when the device under test (DUT) experiences a breakdown failure.

[0063] In some exemplary embodiments, the safe operating area measurement method provided by the present invention further includes: determining the drain current degradation ratio of the device under test based on the ratio of the drain current at the previous scanning voltage when the device under test fails due to breakdown to the drain current at the scanning voltage equal to the supply voltage.

[0064] Therefore, by determining the drain current degradation ratio of the device under test (DUT) based on the ratio of the drain current at the previous scan voltage when the DUT fails to the drain current at a scan voltage equal to the supply voltage, the essential differences in the breakdown modes of the device can be quantified intuitively. Specifically, if the drain current degradation ratio of the DUT is much greater than 1, it indicates that the current of the DUT surged before breakdown, which is a typical avalanche breakdown or parasitic bipolar transistor effect triggered failure (short-circuit breakdown failure); if the drain current degradation ratio of the DUT is much less than 1, it indicates that the current of the DUT has already shrunk before reaching the expected current, which is a thermal burn-out or channel degradation failure (open-circuit breakdown failure); if the drain current degradation ratio of the DUT is close to or equal to 1, it indicates that the current of the DUT at the time of breakdown failure is comparable to the normal operating current. Furthermore, since the drain current degradation ratio can measure the amplification or attenuation factor of the current from the normal operating point to the breakdown point of a device, the drain current degradation ratio can be used to characterize the device's ability to maintain or amplify current under overvoltage stress.

[0065] Specifically, the formula for calculating the drain current degradation ratio of the device under test is as follows:

[0066]

[0067] in, This represents the drain current degradation ratio of the device under test. This refers to the drain current at the previous scan voltage when the device under test (DUT) experiences a breakdown failure. The device under test is supplied with a voltage at the scanning voltage (drain voltage). The drain current (i.e., the drain voltage Vd) is equal to the supply voltage. (drain current at that time).

[0068] Based on the same inventive concept, the present invention also provides an electronic device, please refer to... Figure 5 This is a block diagram of an electronic device provided in one embodiment of the present invention. Figure 5 As shown, the electronic device includes a processor 110 and a memory 130. The memory 130 stores a computer program. When the computer program is executed by the processor 110, it implements the secure working area measurement method described above. Since the electronic device provided by this invention and the secure working area measurement method provided by this invention belong to the same inventive concept, the electronic device provided by this invention has at least all the beneficial effects of the secure working area measurement method provided by this invention. Therefore, the beneficial effects of the electronic device provided by this invention can be referred to the relevant descriptions of the beneficial effects of the secure working area measurement method provided by this invention above, and will not be repeated here.

[0069] Please continue to refer to this. Figure 5 ,like Figure 5 As shown, the electronic device also includes a communication interface 120 and a communication bus 140, wherein the processor 110, the communication interface 120, and the memory 130 communicate with each other through the communication bus 140. The communication bus 140 can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. This communication bus 140 can be divided into an address bus, a data bus, a control bus, etc. For ease of illustration, only one thick line is used to represent it in the figure, but this does not indicate that there is only one bus or one type of bus. The communication interface 120 is used for communication between the aforementioned electronic device and other devices.

[0070] It should be noted that the processor 110 referred to in this invention can be a Central Processing Unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor can be a microprocessor or any conventional processor. The processor 110 is the control center of the electronic device, connecting various parts of the entire electronic device through various interfaces and lines.

[0071] It should also be noted that the memory 130 can be used to store the computer program, and the processor 110 implements various functions of the electronic device by running or executing the computer program stored in the memory 130 and calling the data stored in the memory 130. The memory 130 may include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable memory (PROM), electrically programmable memory (EPROM), electrically erasable programmable memory (EEPROM), or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. By way of illustration and not limitation, random access memory is available in a variety of forms, such as static random access memory (SRAM), dynamic random access memory (DRAM), synchronous random access memory (SDRAM), dual data rate synchronous random access memory (DDRSDRAM), enhanced synchronous random access memory (ESDRAM), synchronous link dynamic random access memory (SLDRAM), memory bus direct random access memory (RDRAM), direct memory bus dynamic random access memory (DRDRAM), and memory bus dynamic random access memory (RDRAM), etc.

[0072] This invention also provides a readable storage medium storing a computer program, which, when executed by a processor, can implement the secure working area measurement method described above. Since the readable storage medium provided by this invention and the secure working area measurement method provided by this invention belong to the same inventive concept, the readable storage medium provided by this invention possesses at least all the beneficial effects of the secure working area measurement method provided by this invention. Therefore, the beneficial effects of the readable storage medium provided by this invention can be referred to the relevant descriptions of the beneficial effects of the secure working area measurement method provided by this invention above, and will not be repeated here.

[0073] It should be noted that the readable storage medium provided by this invention can be any combination of one or more computer-readable media. The readable medium can be a computer-readable signal medium or a computer-readable storage medium. Computer-readable storage media can be, for example, but not limited to, electrical, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatuses, or devices, or any combination thereof. More specific examples of computer-readable storage media (not an exhaustive list) include: electrical connections having one or more wires, portable computer hard drives, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fibers, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination thereof. In this document, a computer-readable storage medium can be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, apparatus, or device.

[0074] Furthermore, the computer-readable signal medium may include data signals propagated in baseband or as part of a carrier wave, carrying computer-readable program code. Such propagated data signals may take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. The computer-readable signal medium may also be any computer-readable medium other than a computer-readable storage medium, which can send, propagate, or transmit a program for use by or in connection with an instruction execution system, apparatus, or device. The program code contained on the computer-readable medium may be transmitted using any suitable medium, including but not limited to wireless, wired, optical fiber, etc., or any suitable combination thereof.

[0075] In summary, compared with the prior art, the safe operating area measurement method, electronic device, and readable storage medium provided by the present invention have the following unexpected technical effects: By setting the initial value of the drain voltage of the device under test (i.e., the initial drain scan voltage) to 0.5 to 1 times (e.g., 0.8 times) of the supply voltage, the present invention can save measurement time while ensuring that the breakdown voltage of the device under test can be measured, thereby effectively improving the measurement efficiency of the safe operating area of ​​the device under test. Furthermore, by stopping the application of the scan voltage to the drain of the device under test after determining that a breakdown failure has occurred (i.e., stopping the test), the present invention can not only further save measurement time but also avoid leakage and damage caused by prolonged application of high voltage to the probe card, thereby protecting the probe card and reducing measurement risks. Furthermore, by measuring the initial linear region drain current at a preset low drain voltage (e.g., 0.1V) before formally applying a high-voltage scan (e.g., 0.8 times the supply voltage Vdd), this invention allows for the measurement of the linear region drain current, representing the channel's most original and healthiest state, even before the device is subjected to high-voltage stress. This provides a zero-stress reference point for subsequent quantitative assessment of the channel's degradation under high voltage. Additionally, by reducing the drain current of the device under test from the scan voltage to the preset low drain voltage after measuring the drain current at each scan voltage, and then measuring the corresponding linear region drain current, this invention can capture progressive damage that may occur before the device reaches its final breakdown point, thus providing data support for analyzing the device's degradation mechanism.

[0076] It should be noted that computer program code for performing the operations of this invention can be written in one or more programming languages ​​or a combination thereof. These programming languages ​​include object-oriented programming languages ​​such as Java, Smalltalk, and C++, as well as conventional procedural programming languages ​​such as C or similar languages. The program code can be executed entirely on the user's computer, partially on the user's computer, as a standalone software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In cases involving remote computers, the remote computer can be connected to the user's computer via any type of network—including a local area network (LAN) or a wide area network (WAN)—or can be connected to an external computer (e.g., via the Internet using an Internet service provider).

[0077] It should be noted that the above description is merely a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure are within the protection scope of the present invention. Obviously, those skilled in the art can make various modifications and variations to the present invention without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the present invention and its equivalents, the present invention also intends to include these modifications and variations.

Claims

1. A method for measuring a safe working area, characterized in that, include: Determine the starting drain scan voltage corresponding to the device under test, wherein the starting drain scan voltage is equal to a preset multiple of the supply voltage, and the preset multiple is greater than or equal to 0.5 times and less than 1 time; Following the scanning rule of gradually increasing the scanning voltage from the initial drain scanning voltage until the device under test (DUT) breaks down, the scanning voltage is applied to the drain of the DUT sequentially and the drain current at each scanning voltage is measured. The safe operating area curve of the device under test is plotted based on the measured relationship between drain current and drain voltage. The method further includes: Before applying the initial drain scan voltage to the drain of the device under test, a preset low drain voltage is applied to the drain of the device under test to measure the corresponding initial linear region drain current. For each scanning voltage, after measuring the drain current at that scanning voltage, the drain voltage of the device under test is reduced from that scanning voltage to the preset low drain voltage in order to measure the corresponding linear region drain current. If the drain current measured at the current scanning voltage satisfies the following relationship with the drain current measured at the previous scanning voltage, then the device under test is determined to have suffered a breakdown failure: or in, This is the drain current measured at the current scanning voltage. The drain current measured at the previous scan voltage; or If the currently measured linear region drain current and the previously measured linear region drain current satisfy the following relationship, then the device under test is determined to have experienced a breakdown failure: or in, This represents the drain current in the linear region as currently measured. This is the drain current in the linear region obtained from the previous measurement.

2. The method for measuring safe working areas according to claim 1, characterized in that, The measurement method further includes: The previous scan voltage at which the device under test (DUT) fails due to breakdown is taken as the breakdown voltage of the DUT.

3. The method for measuring safe working areas according to claim 1, characterized in that, The measurement method further includes: The linear current decay ratio of the device under test is determined by the ratio of the drain current in the previous linear region when the device under test fails to the drain current in the initial linear region.

4. The method for measuring safe working areas according to claim 1, characterized in that, The measurement method further includes: Measure the substrate current at each scan voltage; The substrate current ratio at the breakdown point of the device under test is determined by the ratio of the substrate current to the drain current at the previous scan voltage when the device under test fails due to breakdown.

5. The method for measuring safe working areas according to claim 1, characterized in that, The measurement method further includes: The drain current degradation ratio of the device under test is determined by the ratio of the drain current at the previous scanning voltage when the device under test fails due to breakdown to the drain current at the scanning voltage equal to the supply voltage.

6. An electronic device, characterized in that, It includes a processor and a memory, wherein the memory stores a computer program, which, when executed by the processor, implements the safe working area measurement method as described in any one of claims 1 to 5.

7. A readable storage medium, characterized in that, The readable storage medium stores a computer program, which, when executed by a processor, implements the secure working area measurement method as described in any one of claims 1 to 5.

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