An anti-interference circuit for LED display devices that suppresses microwave radiation interference.

Abstract

This invention belongs to the field of electromagnetic protection technology for electronic devices, and specifically relates to an anti-interference circuit for LED display devices that suppresses microwave radiation interference. It includes: a radiation energy absorption module connected between a driving module and a driving port, which drives a light-emitting diode (LED) to light up through the driving port; the radiation energy absorption module is structurally equivalent to a controllable impedance path connecting the driving module and the LED; when the driving module is in the working state, the radiation energy absorption module is controlled to be in a high impedance state so as not to affect the normal lighting of the LED; when the driving module is in the off state, the radiation energy absorption module is controlled to be in a low impedance state, providing a discharge path for microwave radiation energy coupled to the PCB that is preferential to the LED over the LED. This invention can absorb microwave radiation energy, prevent accidental LED lighting, and not affect the normal LED display.

Description

Technical Field

[0001] This invention belongs to the field of electromagnetic protection technology for electronic devices, and specifically relates to an anti-interference circuit for LED display devices that suppresses microwave radiation interference. Background Technology

[0002] With the widespread adoption of wireless communication technology and high-power household appliances, the electromagnetic environment in space is becoming increasingly complex, and unintentional electromagnetic interference between various devices is becoming more prominent. In microwave environments with high output power, such as microwave ovens, the radio frequency energy generated by the magnetron during operation, besides being used for heating, inevitably results in a small amount of microwave leakage. This leakage creates a localized high-intensity electromagnetic field, which is one of the main sources of interference for nearby electronic devices. Meanwhile, LED display panels, with integrated circuits at their core, are common in microwave ovens. When such devices are in the radiation field of a microwave oven, interference signals affect the system mainly through two pathways: first, through direct coupling via spatial radiation to high-speed signal traces such as clock and data lines on the internal PCB; second, through conduction via the power port into the device's power supply network. Under the high-power microwave radiation generated by a microwave oven, the coupled signals are sufficient to interfere with the LED control chip's control of the display panel, ultimately manifesting visually as screen flickering, jittering, or abnormal display, severely impacting user experience and device reliability. In a strong microwave radiation environment, the microwave energy reaches 0.1W~10W. At this time, the microwave energy will be coupled into the circuit board through the metal traces on the PCB. If there are LEDs on the circuit board, the microwave energy is enough to light up the LEDs, thus producing an unintended lighting state and affecting the display function of the device.

[0003] In existing technologies, conventional methods for improving the electromagnetic compatibility of equipment, such as adding shielding covers to the PCB, optimizing wiring, or installing filters at the ports, while effective to some extent, have the following obvious limitations: 1) Most of these are general solutions, and their protective effectiveness is often insufficient against the high-intensity narrowband microwave radiation unique to microwave ovens.

[0004] 2) Adding a shield will increase the size of the equipment, increase the heat dissipation burden and significantly increase the material cost; while the introduction of a filter may cause signal integrity degradation and transmission rate reduction.

[0005] 3) As LED display modules become thinner and denser, their internal space becomes increasingly compact, leaving less and less room for traditional shielding structures, creating a contradiction between design and protection.

[0006] Currently, there are no reliable improvement measures for LED control driver ICs to suppress microwaves in the range of 0.1W to 10W. Therefore, there is an urgent need in the field for a dedicated solution that is highly targeted, compact, and does not sacrifice device performance, in order to fundamentally enhance the anti-interference capability and operational stability of LED display devices in complex electromagnetic environments, especially in strong microwave radiation fields. Summary of the Invention

[0007] The purpose of this invention is to provide an anti-interference circuit for LED display devices that suppresses microwave radiation interference. This invention can absorb microwave radiation energy, prevent LEDs from being accidentally lit without affecting the normal display of the LEDs. Moreover, the circuit structure is simple, does not rely on special processes, and does not require additional peripheral components to support the chip.

[0008] To solve the above-mentioned technical problems, the present invention provides an anti-interference circuit for LED display devices that suppresses microwave radiation interference, comprising: A radiation energy absorption module is connected between a driving module and a driving port, and drives a light-emitting diode to light up through the driving port; the radiation energy absorption module is equivalent in circuit structure to a controllable impedance path connected between the driving module and the light-emitting diode; When the driving module is in the working state, it controls the radiation energy absorption module to be in a high impedance state so as not to affect the normal lighting of the light-emitting diode; when the driving module is in the off state, it controls the radiation energy absorption module to be in a low impedance state to provide a discharge path for the microwave radiation energy coupled to the PCB that is preferred over the light-emitting diode. During the energy dissipation process when the radiation energy absorption module is in a low impedance state, the voltage change amplitude of the drive port is controlled by the source follower and the adjustable bias voltage, thereby preventing the energy dissipation from applying an excessively large reverse bias voltage to the light-emitting diode.

[0009] Preferably, the radiation energy absorption module includes: an adjustable bias module and an equivalent switch; the adjustable bias module provides the adjustable bias voltage to the equivalent switch to control the voltage change amplitude of the drive port during energy discharge.

[0010] Preferably, the equivalent switch is implemented by a controllable impedance path consisting of a series-connected PMOS transistor and an NMOS transistor.

[0011] Preferably, the on / off state of the equivalent switch is controlled by a first control signal, which is in phase with the second control signal of the drive module but has a time delay, so as to control the equivalent switch to close before the drive module is turned on and to open after the drive module is turned off.

[0012] Preferably, the adjustable bias module consists of an adjustable resistor, a voltage divider resistor, and a clamping transistor connected in series, with the gate-drain terminal of the clamping transistor short-circuited; depending on the intensity of microwave radiation energy in the environment where the LED display device is located, the resistance value of the adjustable resistor is adjusted to achieve a balance between the LED reverse bias protection capability and the radiation energy dissipation capability.

[0013] Preferably, the conduction state of the equivalent switch is controlled by a third control signal. The third control signal is used to control the conduction state of the equivalent switch by adjusting the resistance of the adjustable resistor to obtain a bias voltage after voltage division during radiant energy injection, thereby controlling the voltage change amplitude of the drive port.

[0014] The present invention also provides an LED display device applied to a cathode driver IC, employing an anti-interference circuit for suppressing microwave radiation interference as described above, comprising: A radiation energy absorption module includes an adjustable bias module and an equivalent switch. The adjustable bias module includes an adjustable resistor Rd, a voltage divider resistor R1, and an NMOS clamping transistor N3. One end of the adjustable resistor Rd is connected to a power supply VDD, and the other end is connected to one end of the voltage divider resistor R1 and outputs a bias voltage signal B. The other end of the voltage divider resistor R1 is connected to the gate-drain terminal of the NMOS clamping transistor N3, and the source terminal of the NMOS clamping transistor N3 is grounded. The equivalent switch includes a PMOS transistor P1 and an NMOS transistor N1. The source terminal of the PMOS transistor P1 is connected to the power supply VDD, the gate terminal is connected to a first control signal A', and the drain terminal is connected to the drain terminal of the NMOS transistor N1. The gate terminal of the NMOS transistor N1 is connected to the bias voltage signal B, and the source terminal is connected to the cathode drive port. The driving module includes an NMOS driving transistor N2; the gate terminal of the NMOS driving transistor N2 is connected to the second control signal A, the drain terminal is connected to the cathode driving port, and the source terminal is grounded. The light-emitting diode has its anode connected to the power supply VDD, and its cathode connected to the cathode drive port via a PCB trace.

[0015] Preferably, the lower the voltage of the bias voltage signal B, the lower the maximum voltage that the cathode driving port can reach during energy dissipation, and the stronger the reverse bias voltage protection effect for the light-emitting diode, but the energy dissipation capability is correspondingly weakened; conversely, the higher the voltage of the bias voltage signal B, the stronger the energy dissipation capability, but the corresponding weakened reverse bias voltage protection effect for the light-emitting diode.

[0016] The present invention also provides an LED display device applied to an anode driver IC, employing an anti-interference circuit for suppressing microwave radiation interference as described above, comprising: A radiation energy absorption module includes an adjustable bias module and an equivalent switch. The adjustable bias module includes an adjustable resistor Rd', a voltage divider resistor R2, and a PMOS clamping transistor P4. One end of the adjustable resistor Rd' is grounded, and the other end is connected to one end of the voltage divider resistor R2 and outputs a bias voltage signal D. The other end of the voltage divider resistor R2 is connected to the gate-drain terminal of the PMOS clamping transistor P4, and the source terminal of the PMOS clamping transistor P4 is connected to the power supply VDD. The equivalent switch includes a PMOS transistor P3 and an NMOS transistor N4. The source terminal of the PMOS transistor P3 is connected to the anode drive port, the gate terminal is connected to the bias voltage signal D, and the drain terminal is connected to the drain terminal of the NMOS transistor N4. The gate terminal of the NMOS transistor N4 is connected to a first control signal C', and the source terminal is grounded. The driving module includes a PMOS driving transistor P2; the gate terminal of the PMOS driving transistor P2 is connected to the second control signal C, the drain terminal is connected to the anode driving port, and the source terminal is connected to the power supply VDD. The light-emitting diode (LED) has its anode connected to the anode drive port via a PCB trace, and its cathode grounded.

[0017] Preferably, when the voltage of the bias voltage signal D is higher, the minimum voltage that the anode drive port can reach during energy dissipation is higher, and the reverse bias voltage protection effect of the light-emitting diode is stronger, but the energy dissipation capability is correspondingly weakened; conversely, when the voltage of the bias voltage signal D is lower, the energy dissipation capability is stronger, but the reverse bias voltage protection effect of the light-emitting diode is correspondingly weakened.

[0018] Compared with the prior art, the present invention has the following beneficial effects: The anti-interference circuit designed in this invention is applicable to various types of LED display driver control circuits. Depending on the output signal of the driver port, different but identical radiation energy absorption modules are designed to absorb microwave radiation energy. The radiation energy absorption module at the cathode driver port is equivalent to a controlled switch from the output port to the power supply, while the radiation energy absorption module at the anode driver port is equivalent to a controlled switch from the output port to the ground wire. The equivalent switch has strong conduction capability, achieving a power discharge capability of over 10mA. The radiation energy absorption module and driver module of this invention work alternately, avoiding simultaneous on / off states, but allowing simultaneous off states. This effectively solves the problem of abnormal lighting in LED panels constructed with traditional LED drivers under strong microwave radiation environments ranging from 0.1W to 10W, without affecting the original LED display function. Attached Figure Description

[0019] Figure 1 This is a schematic block diagram of an LED display device applied to a cathode driver IC, provided in an embodiment of the present invention.

[0020] Figure 2 This is a schematic diagram of the cathode-driven anti-interference circuit provided in an embodiment of the present invention.

[0021] Figure 3 This is a schematic block diagram of an LED display device applied to an anode driver IC, provided in an embodiment of the present invention.

[0022] Figure 4 This is a schematic diagram of the anti-interference circuit for anode drive provided in an embodiment of the present invention. Detailed Implementation

[0023] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of the present invention.

[0024] Combination Figures 1 to 4 As shown, this embodiment of the invention specifically provides an anti-interference circuit for LED display devices that suppresses microwave radiation interference, including: A radiation energy absorption module is connected between a driving module and a driving port, and drives a light-emitting diode to light up through the driving port; the radiation energy absorption module is equivalent in circuit structure to a controllable impedance path connected between the driving module and the light-emitting diode; When the driving module is in the working state, it controls the radiation energy absorption module to be in a high impedance state so as not to affect the normal lighting of the light-emitting diode; when the driving module is in the off state, it controls the radiation energy absorption module to be in a low impedance state to provide a discharge path for the microwave radiation energy coupled to the PCB that is preferred over the light-emitting diode. During the energy dissipation process when the radiation energy absorption module is in a low impedance state, the voltage change amplitude of the drive port is controlled by the source follower and the adjustable bias voltage, thereby preventing the energy dissipation from applying an excessively large reverse bias voltage to the light-emitting diode.

[0025] The radiation energy absorption module includes an adjustable bias module and an equivalent switch; the adjustable bias module provides the adjustable bias voltage to the equivalent switch to control the voltage change amplitude of the drive port during energy discharge.

[0026] The equivalent switch is achieved by a controllable impedance path consisting of a series-connected PMOS transistor and an NMOS transistor.

[0027] The on / off state of the equivalent switch is controlled by a first control signal. The first control signal and the second control signal of the drive module are in phase but have a time delay, so as to control the equivalent switch to close before the drive module is turned on and to turn on after the drive module is turned off.

[0028] The adjustable bias module consists of an adjustable resistor, a voltage divider resistor, and a clamping transistor connected in series, with the gate-drain terminal of the clamping transistor short-circuited. Depending on the intensity of microwave radiation energy in the environment where the LED display device is located, the resistance value of the adjustable resistor is adjusted to achieve a balance between the LED reverse bias protection capability and the radiation energy dissipation capability.

[0029] The conduction state of the equivalent switch is controlled by a third control signal. The third control signal is used to control the conduction state of the equivalent switch by adjusting the resistance of the adjustable resistor to obtain a bias voltage after voltage division during radiant energy injection, thereby controlling the voltage change amplitude of the drive port.

[0030] When applied to cathode-driven drive modules, the radiation energy absorption module is structurally equivalent to an analog equivalent switch between an IC power supply (VDD) and the drive port. When the drive module is operating, this equivalent switch is open, not affecting the normal lighting of the LED; when the drive module is off, this equivalent switch is closed, absorbing any radiant energy that may be present.

[0031] When microwave radiation couples onto the PCB, it couples as energy, and the energy seeks the path of lowest impedance for conduction. Assuming there is no radiation energy absorption module, then: When the driver module is working, the lowest impedance path is conducted through the driver module to the ground wire, and this process will not affect the LED lighting. When the driver module is off, the path of lowest impedance is through the LED to the power supply VDD, which may cause the LED to light up accidentally.

[0032] By adding a radiation energy absorption module, the impedance of its equivalent switch is much lower than that of the LED, and the energy will be preferentially conducted to the power supply VDD through the radiation energy absorption module.

[0033] As a preferred application of the cathode driver IC, this embodiment of the invention also provides an LED display device applied to the cathode driver IC, comprising: A radiation energy absorption module includes an adjustable bias module and an equivalent switch. The adjustable bias module includes an adjustable resistor Rd, a voltage divider resistor R1, and an NMOS clamping transistor N3. One end of the adjustable resistor Rd is connected to a power supply VDD, and the other end is connected to one end of the voltage divider resistor R1 and outputs a bias voltage signal B. The other end of the voltage divider resistor R1 is connected to the gate-drain terminal of the NMOS clamping transistor N3, and the source terminal of the NMOS clamping transistor N3 is grounded. The equivalent switch includes a PMOS transistor P1 and an NMOS transistor N1. The source terminal of the PMOS transistor P1 is connected to the power supply VDD, the gate terminal is connected to a first control signal A', and the drain terminal is connected to the drain terminal of the NMOS transistor N1. The gate terminal of the NMOS transistor N1 is connected to the bias voltage signal B, and the source terminal is connected to the cathode drive port. The driving module includes an NMOS driving transistor N2; the gate terminal of the NMOS driving transistor N2 is connected to the second control signal A, the drain terminal is connected to the cathode driving port, and the source terminal is grounded. The light-emitting diode has its anode connected to the power supply VDD, and its cathode connected to the cathode drive port via a PCB trace.

[0034] The second control signal A of the drive module and the first control signal A' of the radiation energy absorption module are two signals with the same phase but a time delay. The first control signal A' controls PMOS transistor P1 to be turned off before the drive module is turned on and turned on after the drive module is turned off. This first control signal A' ensures that the radiation energy absorption module only functions after the drive module is turned off and will not affect the normal drive process.

[0035] The bias voltage signal B is obtained by voltage division through the adjustable resistor Rd and applied to the gate terminal of NMOS transistor N1 in the equivalent switch. This structure is used to control the port voltage during the discharge of radiated energy during the turn-on process of the equivalent switch. The source follower behavior of NMOS transistor N1 limits the rise in the drive port voltage. The lower the voltage of the bias voltage signal B obtained by voltage division through the adjustable resistor Rd, the lower the maximum voltage that can be reached during the energy discharge process at the drive port, but the discharge capability will be weakened. The purpose of this structure is to prevent the application of an excessively large reverse bias voltage to the LED during the discharge process, thereby avoiding damage to the LED. The value of the adjustable resistor Rd can be determined according to the intensity of radiated energy in the environment, thus selecting an appropriate B signal voltage.

[0036] When applied to a driver module type driven by an anode, the radiation energy absorption module is equivalent in circuit structure to an analog equivalent switch between an IC ground line and a driver port. When the driver module is working, the equivalent switch is open and does not affect the normal lighting of the LED; when the driver module is off, the equivalent switch is closed and absorbs any radiation energy that may be present.

[0037] As a preferred application of the anode driver IC, this embodiment of the invention also provides an LED display device applied to the anode driver IC, comprising: A radiation energy absorption module includes an adjustable bias module and an equivalent switch. The adjustable bias module includes an adjustable resistor Rd', a voltage divider resistor R2, and a PMOS clamping transistor P4. One end of the adjustable resistor Rd' is grounded, and the other end is connected to one end of the voltage divider resistor R2 and outputs a bias voltage signal D. The other end of the voltage divider resistor R2 is connected to the gate-drain terminal of the PMOS clamping transistor P4, and the source terminal of the PMOS clamping transistor P4 is connected to the power supply VDD. The equivalent switch includes a PMOS transistor P3 and an NMOS transistor N4. The source terminal of the PMOS transistor P3 is connected to the anode drive port, the gate terminal is connected to the bias voltage signal D, and the drain terminal is connected to the drain terminal of the NMOS transistor N4. The gate terminal of the NMOS transistor N4 is connected to a first control signal C', and the source terminal is grounded. The driving module includes a PMOS driving transistor P2; the gate terminal of the PMOS driving transistor P2 is connected to the second control signal C, the drain terminal is connected to the anode driving port, and the source terminal is connected to the power supply VDD. The light-emitting diode (LED) has its anode connected to the anode drive port via a PCB trace, and its cathode grounded.

[0038] The second control signal C of the drive module and the first control signal C' of the radiation energy absorption module are two signals with the same phase but a time delay. The first control signal C' controls PMOS transistor P3 to be turned off before the drive module is turned on and turned on after the drive module is turned off. This first control signal C' ensures that the radiation energy absorption module only works after the drive module is turned off and will not affect the normal drive process.

[0039] The bias voltage signal D is obtained by voltage division through the adjustable resistor Rd' and applied to the gate terminal of P3 in the equivalent switch. This structure is used to control the port voltage during the discharge of radiated energy during the equivalent switch's turn-on process. The source follower behavior of P3 limits the magnitude of the voltage drop at the drive port. A higher bias voltage signal D obtained by voltage division through the adjustable resistor Rd' results in a higher minimum voltage limit during energy discharge at the drive port, but the discharge capability will be weakened. The purpose of this structure is to prevent excessive reverse bias voltage from being applied to the LED during discharge, thereby avoiding damage to the LED. The value of the adjustable resistor can be determined based on the intensity of radiated energy in the environment, thus selecting an appropriate bias voltage signal D.

[0040] As one preferred application scheme that includes cathode and anode driver ICs, if a driver IC includes complete cathode and anode drivers, then the above two types of radiation energy absorption modules with different structures but the same principle are designed on the cathode and anode drivers.

[0041] The above description is merely a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.

Claims

1. An anti-interference circuit for LED display devices that suppresses microwave radiation interference, characterized in that, include: A radiation energy absorption module is connected between a drive module and a drive port, and drives a light-emitting diode to light up through the drive port. The radiation energy absorption module is equivalent in circuit structure to a controllable impedance path connected between the driving module and the light-emitting diode. When the driving module is in the working state, it controls the radiation energy absorption module to be in a high impedance state so as not to affect the normal lighting of the light-emitting diode; when the driving module is in the off state, it controls the radiation energy absorption module to be in a low impedance state to provide a discharge path for the microwave radiation energy coupled to the PCB that is preferred over the light-emitting diode. During the energy dissipation process when the radiation energy absorption module is in a low impedance state, the voltage change amplitude of the drive port is controlled by the source follower and the adjustable bias voltage, thereby preventing the energy dissipation from applying an excessively large reverse bias voltage to the light-emitting diode. The radiation energy absorption module includes: an adjustable bias module and an equivalent switch; the adjustable bias module provides the adjustable bias voltage to the equivalent switch to control the voltage change amplitude of the drive port during the energy discharge process; The equivalent switch is realized by a controllable impedance path consisting of a series PMOS transistor and an NMOS transistor; the switching on and off of the equivalent switch is controlled by a first control signal and an adjustable bias voltage.

2. The anti-interference circuit for LED display devices that suppresses microwave radiation interference as described in claim 1, characterized in that, The first control signal and the second control signal of the drive module are in phase but have a time delay, so as to control the equivalent switch to close before the drive module is turned on and to turn on after the drive module is turned off.

3. The anti-interference circuit for LED display devices that suppresses microwave radiation interference as described in claim 1, characterized in that, The adjustable bias module consists of an adjustable resistor, a voltage divider resistor, and a clamping transistor connected in series, with the gate-drain terminal of the clamping transistor short-circuited. Depending on the intensity of microwave radiation energy in the environment where the LED display device is located, the resistance value of the adjustable resistor is adjusted to achieve a balance between the LED reverse bias protection capability and the radiation energy dissipation capability.

4. The anti-interference circuit for LED display devices that suppresses microwave radiation interference as described in claim 3, characterized in that, The conduction state of the equivalent switch is controlled by an adjustable bias voltage. The adjustable bias voltage is used to obtain a voltage divider bias voltage by adjusting the resistance value of the adjustable resistor during radiant energy injection, so as to control the conduction state of the equivalent switch and thus control the voltage change amplitude of the drive port.

5. An LED display device applied to a cathode driver IC, employing an anti-interference circuit for suppressing microwave radiation interference as described in any one of claims 1 to 4, characterized in that, include: A radiation energy absorption module includes an adjustable bias module and an equivalent switch. The adjustable bias module includes an adjustable resistor Rd, a voltage divider resistor R1, and an NMOS clamping transistor N3. One end of the adjustable resistor Rd is connected to a power supply VDD, and the other end is connected to one end of the voltage divider resistor R1 and outputs an adjustable bias voltage, specifically a bias voltage signal B. The other end of the voltage divider resistor R1 is connected to the gate-drain terminal of the NMOS clamping transistor N3, and the source terminal of the NMOS clamping transistor N3 is grounded. The equivalent switch includes a PMOS transistor P1 and an NMOS transistor N1. The source terminal of the PMOS transistor P1 is connected to the power supply VDD, the gate terminal is connected to a first control signal A', and the drain terminal is connected to the drain terminal of the NMOS transistor N1. The gate terminal of the NMOS transistor N1 is connected to the bias voltage signal B, and the source terminal is connected to the cathode drive port. The driving module includes an NMOS driving transistor N2; the gate terminal of the NMOS driving transistor N2 is connected to the second control signal A, the drain terminal is connected to the cathode driving port, and the source terminal is grounded. The light-emitting diode has its anode connected to the power supply VDD, and its cathode connected to the cathode drive port via a PCB trace.

6. An LED display device applied to a cathode driver IC as described in claim 5, characterized in that, When the voltage of the bias voltage signal B is lower, the highest voltage that the cathode drive port can reach during energy discharge is lower, the reverse bias voltage protection effect of the light-emitting diode is stronger, but the energy discharge capability is correspondingly weakened. Conversely, the higher the voltage of the bias voltage signal B, the stronger the energy discharge capability, but the corresponding reduction in the reverse bias voltage protection effect on the light-emitting diode.

7. An LED display device applied to an anode driver IC, employing an anti-interference circuit for suppressing microwave radiation interference as described in any one of claims 1 to 4, characterized in that, include: A radiation energy absorption module includes an adjustable bias module and an equivalent switch. The adjustable bias module includes an adjustable resistor Rd', a voltage divider resistor R2, and a PMOS clamping transistor P4. One end of the adjustable resistor Rd' is grounded, and the other end is connected to one end of the voltage divider resistor R2 and outputs an adjustable bias voltage, specifically a bias voltage signal D. The other end of the voltage divider resistor R2 is connected to the gate-drain terminal of the PMOS clamping transistor P4, and the source terminal of the PMOS clamping transistor P4 is connected to the power supply VDD. The equivalent switch includes a PMOS transistor P3 and an NMOS transistor N4. The source terminal of the PMOS transistor P3 is connected to the anode drive port, the gate terminal is connected to the bias voltage signal D, and the drain terminal is connected to the drain terminal of the NMOS transistor N4. The gate terminal of the NMOS transistor N4 is connected to a first control signal C', and the source terminal is grounded. The driving module includes a PMOS driving transistor P2; the gate terminal of the PMOS driving transistor P2 is connected to the second control signal C, the drain terminal is connected to the anode driving port, and the source terminal is connected to the power supply VDD. The light-emitting diode (LED) has its anode connected to the anode drive port via a PCB trace, and its cathode grounded.

8. An LED display device applied to an anode driver IC as described in claim 7, characterized in that, When the voltage of the bias voltage signal D is higher, the minimum voltage that the anode drive port can reach during energy discharge is higher, the reverse bias voltage protection effect of the light-emitting diode is stronger, but the energy discharge capability is correspondingly weakened. Conversely, the lower the voltage of the bias voltage signal D, the stronger the energy discharge capability, but the corresponding reduction in the reverse bias voltage protection effect on the light-emitting diode.

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