Memory device and method for operating the same
By differentiating cell strings with different erasure rates in the memory device and performing erasure operations at different time intervals, the over-erasure problem is solved, improving the reliability and programming efficiency of the memory device.
CN122245380APending Publication Date: 2026-06-19SK HYNIX INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SK HYNIX INC
- Filing Date
- 2025-08-19
- Publication Date
- 2026-06-19
AI Technical Summary
Technical Problem
Because memory cells erase at different speeds during the erase operation, over-erasing occurs, affecting programming operation time and the reliability of the memory device.
Method used
By introducing a first cell string and a second cell string into the memory device, the erase setup, erase execution, and discharge operations are performed at different time intervals. For the cell string with a fast erase speed, a shorter time interval is used for operation to avoid over-erasing.
Benefits of technology
It effectively prevents or mitigates over-erasing, improving the reliability of memory devices and the efficiency of programming operations.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN122245380A_ABST
Abstract
This disclosure relates to a memory device and a method for operating the memory device. A memory device includes: a memory block comprising a first cell string and a second cell string, the second cell string having a faster erase speed than the first cell string; and peripheral circuitry configured to perform an erase operation on the memory block, the erase operation including, sequentially, an erase setup operation, an erase execution operation, and a discharge operation, wherein the peripheral circuitry is configured to perform an erase execution operation on the first cell string during a first time period and to perform an erase execution operation on the second cell string during a second time period shorter than the first time period.
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