Novel wafer structure

Abstract

This invention relates to a novel wafer structure, comprising two insulating inserts, each containing multiple signal terminals injection-molded within it. Each insulating insert also has multiple routing slots, with the routing areas of the signal terminals suspended within the corresponding slots. Several limiting protrusions are staggered along the extension direction of the side walls of each routing slot. These protrusions cover the edges of the routing areas. A notch is provided on the opposite side of the area covered by the limiting protrusions, used to adjust for impedance changes caused by the other edge being covered by the limiting protrusions. This invention eliminates the need for connecting ribs at the routing points, directly suspending the routing areas within the routing slots. Positioning of the routing areas is achieved solely by the positioning ribs covering the edges. Furthermore, the notch in the routing areas compensates for impedance changes caused by the covering of the positioning ribs, thereby improving crosstalk and insertion loss at the wafer routing points.

Description

Technical Field

[0001] This invention belongs to the field of terminal module technology in the field of electronic communication technology, and specifically relates to a novel wafer structure. Background Technology

[0002] The wafer routing area is divided into three main regions: the mating area, the routing area, and the fisheye area. The mating area is designed with a clamping structure for connector mating. The fisheye area is mainly used to house fisheye features, allowing them to integrate with the printed circuit board. To ensure the overall strength of the wafer, existing wafer routing requires at least two plastic reinforcing ribs at the routing points. With increasing product speeds, these plastic reinforcing ribs at the wafer routing points become a key feature affecting insertion loss and crosstalk. Summary of the Invention

[0003] To address the aforementioned issues, this invention provides a novel wafer structure that suspends the signal terminal routing area within the routing groove of an insulating insert. Positioning protrusions, staggered along the sides of the routing groove, wrap around the edges of the signal terminal routing area, thus supporting and positioning it within the insulating insert. Simultaneously, a notch is provided on the opposite side of the wrapped portion of the routing area to adjust for impedance changes caused by the wrapping, thereby improving differential loss and crosstalk at the wafer routing points.

[0004] The objective of this invention and the technical problem it solves are achieved by the following technical solution. A novel wafer structure proposed according to this invention includes two insulating inserts, each of which is injection-molded with multiple signal terminals. Each insulating insert has multiple routing grooves 11, and the routing area 31 of the signal terminals is suspended within the corresponding routing groove 11. Several limiting protrusions 12 are staggered along the extension direction on both sides of the routing groove 11. These limiting protrusions 12 are used to wrap around the edges of the routing area 31 on both sides. Notches 311 are provided on both sides of the routing area 31 opposite to the corresponding limiting protrusions. These notches 311 are used to adjust the impedance change of the routing area 31 caused by the other edge being wrapped by the limiting protrusion 12.

[0005] The objectives of this invention and the technical problems it addresses can be further achieved by the following technical measures.

[0006] In the aforementioned novel wafer structure, the area of ​​the wiring area 31 enclosed by the limiting protrusion 12 is rectangular, and the opening opposite the enclosed area is an isosceles trapezoid.

[0007] In the aforementioned novel wafer structure, the tail region of the insulating insert is provided with a metal reinforcing plate 7 for enhancing its pressure-bearing capacity. The metal reinforcing plate 7 is encased within the insulating insert and integrally formed with the insulating insert.

[0008] In the aforementioned novel wafer structure, the distance between the metal reinforcing sheet 7 and the wiring groove 11 is greater than 2mm.

[0009] In the aforementioned novel wafer structure, the ratio between the extension length of the insulating insert along the signal terminal mating direction and the extension length along the signal terminal crimping direction is not less than 1.5:1.

[0010] In the aforementioned novel wafer structure, the extension length of the tail region of the insulating insert along the signal terminal mating direction is not less than 2.9 mm.

[0011] The aforementioned novel wafer structure has an overall L-shaped metal reinforcing sheet, including a first side 71 extending along the signal terminal mating direction and distributed on the edge of the insulating insert away from the signal terminal crimping end, and a second side 72 extending along the signal terminal crimping direction and distributed on the edge of the insulating insert away from the signal terminal mating end, wherein the extension length of the second side 72 along the signal terminal mating direction is not less than 1 mm.

[0012] In the aforementioned novel wafer structure, the first side 71 and the second side 72 intersect perpendicularly to form a connecting part, and the side of the connecting part facing the signal terminal insertion area is an oblique side that intersects both the first side 71 and the second side 72.

[0013] In the aforementioned novel wafer structure, there is a gap of not less than 0.3 mm between the metal reinforcing sheet 7 and the edge of the insulating insert.

[0014] In the aforementioned novel wafer structure, the insulating insert is further provided with multiple hot riveting posts. In the tail region and near the signal terminal mating area and crimping area, the radial dimension of the hot riveting post 8 is larger than that of the hot riveting posts in other regions, so as to enhance the pressure-bearing capacity of the aforementioned main pressure-bearing areas.

[0015] Compared with the prior art, the present invention has significant advantages and beneficial effects. Through the above technical solution, the present invention (title) achieves considerable technological advancement and practicality, and has broad industrial application value, possessing at least the following advantages: This invention eliminates the connecting ribs used in existing wafer designs to position and fix the signal terminal routing area within the insulating insert routing groove. Instead, the routing area is directly suspended within the routing groove, with only a few staggered positioning ribs covering the edges of the routing area on both sides of the groove. This achieves positioning of the routing area. Furthermore, by providing notches on the opposite side of the covered portion of the routing area, impedance changes caused by the covering positioning ribs are compensated. Thus, while ensuring the stability of the signal terminal routing area, the invention also improves crosstalk and insertion loss at the wafer routing points.

[0016] This invention also enhances the wafer's compressive strength by incorporating a metal reinforcing plate at the tail region of the insulating insert, ensuring sufficient pressure resistance even after the rib design in the wiring area is eliminated. Furthermore, the distribution of hot-riveted studs further guarantees the wafer's pressure resistance.

[0017] This invention ensures the pressure-bearing capacity of the wafer through metal reinforcing sheets and hot riveting posts, while also allowing the insulating inserts to be made of low-DK LCP material, further improving the wafer's performance. Attached Figure Description

[0018] Figure 1 This is a front view of the novel wafer structure of the present invention; Figure 2 This is an exploded view of the novel wafer structure of the present invention; Figure 3 This is a schematic diagram of the insulator insert structure of the novel wafer structure of the present invention; Figure 4 This is a schematic diagram of the novel wafer structure metal reinforcement sheet of the present invention; Figure 5 This is a cross-sectional view of the novel wafer structure of the present invention; Figure 6 This is a schematic diagram of the signal terminal structure of the wafer structure of the present invention; Figure 7 and Figure 8 This is a stress cloud diagram of the simulation test of the bearing capacity on both sides of the wafer of the present invention.

[0019] [Explanation of Key Component Symbols] 1: First insulating insert; 11: Wiring groove; 12: Limiting protrusion; 13: Tail area; 2: Second insulating insert; 3: First signal terminal; 31: Wiring area; 331: Notch; 32: Mating area; 33: Fisheye area; 4: Second signal terminal; 5: First shielding plate; 6: Second shielding plate; 7: Metal reinforcing plate; 8: Hot riveting post. Detailed Implementation

[0020] To further illustrate the technical means and effects adopted by the present invention to achieve the intended purpose, the following detailed description of the specific implementation, structure, features and effects of the novel wafer structure proposed according to the present invention, in conjunction with the accompanying drawings and preferred embodiments, is provided below.

[0021] Please see Figure 1-6This is a schematic diagram of the various parts of the novel wafer structure of the present invention. The wafer structure includes a first insulating insert 1 and a plurality of first signal terminals 3. The first insulating insert 1 is provided with a plurality of wiring grooves 11. Each of the first signal terminals 3 includes a middle wiring area 31, a mating area 32 at the front end of the wiring area 31, and a fisheye area 33 at the rear end of the wiring area 31. The wiring area 31 of the first signal terminal 3 is located in the corresponding wiring groove 11 on the first insulating insert 1, and the mating area 32 and the fisheye area 33 extend from the corresponding ends of the first insulating insert 1.

[0022] The cable tray 11 has several limiting protrusions 12 staggered along its extension direction on both sides of its side walls. These limiting protrusions 12 are used to wrap and clamp the two sides of the cable tray 31, thereby fixing and supporting the cable tray 31 within the cable tray 11 and preventing the cable tray 31 from being directly suspended in the cable tray 11. That is, the limiting protrusions 12 of the present invention have grooves 121 formed on the surface of the limiting protrusions 12 facing the opposite side wall to accommodate the edge of the cable tray 31.

[0023] Both sides of the wiring area 31, opposite to the limiting protrusions 12 on the inner side of the wall of the wiring groove 11, are provided with notches 311. These notches 311 are used to adjust the impedance change of the wiring area 31 caused by the limiting protrusions 12 covering the opposite side of the notch 311. That is, in this embodiment, when the first signal terminal 3 and the first insulating insert 1 are integrally injection molded, the wiring area 31 of the first signal terminal 3 is suspended in the wiring groove 11 of the first insulating insert 1, and is covered and positioned by the insulating limiting protrusions 12 that are spaced and staggered along the extension direction on both sides. At this time, the wiring area 31 is provided with a notch 311 on the opposite side of each limiting protrusion 12. If the two side walls of the wiring groove 11 are defined as the left wall and the right wall, then the positioning protrusions on the left and right walls are staggered along the extension direction of the wiring area 31, and the notches 311 on the left and right sides of the wiring area 31 are also staggered along the extension direction.

[0024] In this embodiment of the invention, the groove 121 on the limiting protrusion 12 for wrapping the edge of the routing area 31 is a rectangular groove, and the notch 311 for adjusting the impedance of the part of the routing area 31 wrapped by the groove 121 is a trapezoidal notch. The upper base of the trapezoidal notch is smaller near the side of its corresponding limiting protrusion 12, and the trapezoidal notch is an isosceles trapezoid to achieve a stable and slow change in impedance.

[0025] In this invention, the signal terminal wiring area is suspended within a wiring groove and fixed and supported only by a few limiting protrusions 12, resulting in relatively weak overall wafer strength. To further improve wafer strength, a metal reinforcing piece 7 is provided in the tail region 13 of the first insulating insert 1 (the region away from the wafer mating end and without a wiring groove). This metal reinforcing piece 7 is encased within the first insulating insert 1 and integrally formed with it. The distance between the metal reinforcing piece 7 and the wiring groove 11 is greater than 2 mm. In this embodiment, the metal reinforcing piece 7 is generally L-shaped, including a first side 71 extending along the mating direction of the mating area 32 of the first signal terminal 3 and a second side 72 extending along the crimping direction of the crimping area 33 of the first signal terminal 3. Preferably, the first side 71 and the second side 72 intersect perpendicularly to form a connecting portion. The side of the connecting portion near the mating area 32 of the first signal terminal 3 is a bevel 73, and the bevel 73 has an obtuse angle with both the first side 71 and the second side 72. The bevel 73 maximizes the size of the metal reinforcing sheet 7, thereby ensuring the wafer's strength meets usage requirements. In other embodiments of the invention, the shape of the metal reinforcing sheet 7 can be adjusted as needed, requiring only that the distance between the metal reinforcing sheet 7 and the wiring groove 11 is greater than 2mm. To facilitate edge sealing, the distance between the metal reinforcing sheet 7 and the edge of the first insulating insert 1 is greater than 0.3mm.

[0026] In this embodiment of the invention, the metal reinforcing sheet 7 is a copper busbar, but in other embodiments, it may be other metal structures.

[0027] The outer edges of the first side 71 and the second side 72 of the metal reinforcing sheet 7 are provided with protrusions 74 for connecting with the material strip. The edge of the second side 72 is also provided with a relief groove 75 for avoiding the connecting post on the first insulating insert 1.

[0028] The length direction of the first insulating insert 1 along the insertion direction of the first signal terminal 3 insertion area 32 is defined as the length direction, and the width direction along the crimping direction of the crimping area 33 is defined as the width direction. Therefore, the tail region 13 is the tail region of the first insulating insert 1 along its length direction. In this embodiment, the length-to-width ratio of the first insulating insert 1 is greater than or equal to 1.5:1, ensuring that the length of the tail region 13 is not less than 2.9 mm. The metal reinforcing sheet 7 has a length dimension of not less than 1 mm. The metal reinforcing sheet 7 of this invention allows the overall pressure resistance of the wafer to be borne by the tail of the wafer, effectively reducing the pressure on the center of the wafer.

[0029] The present invention further adjusts the pressure-bearing capacity of the wafer by the distribution of the hot riveting posts 8 on the first insulating insert 1. Specifically, the distribution of the hot riveting posts 8 on the first insulating insert 1 reaches the maximum processable density. At the same time, since the tail, the root of the fish eye, and the insertion point of the wafer are all key stress areas, the radial dimension of the hot riveting posts 8 in these key stress areas is larger than the radial dimension of other areas, so as to improve the pressure-bearing capacity of the above-mentioned stress areas.

[0030] The wafer of this invention also includes a second insulating insert 2, a second signal terminal 4 and a metal reinforcing sheet 7 injection molded within the second insulating insert 2. The metal reinforcing sheet 7 is arranged in the second insulating insert 2 in exactly the same way as it is arranged in the first insulating insert 1. The cooperation between the second signal terminal 4 and the second insulating insert 2 is also exactly the same as the cooperation between the first signal terminal and the first insulating insert. Except for the distribution of the hot riveting posts, the first insulating insert 1 and the second insulating insert 2 have the same structure. Both are provided with hot riveting posts and are connected through the hot riveting posts. The first signal terminal 3 and the second signal terminal 4 also have the same structure.

[0031] The wafer of this invention also includes a first shielding plate 5 and a second shielding plate 6. During assembly, the first signal terminal 3, the first insulating insert 1, and the metal reinforcing plate 7 are integrally injection molded to form a first module, and the second signal terminal 4, the second insulating insert 2, and the metal plate 7 are integrally injection molded to form a second module. The first module and the second module are stacked and connected by hot riveting posts 8. The first shielding plate 5 and the second shielding plate 6 are respectively placed on both sides of the stacked structure and are fixed by engaging with the hot riveting posts on the first insulating insert 1 and the second insulating insert 2 through the through holes of the hot riveting posts, thereby achieving signal shielding.

[0032] In this embodiment of the invention, both the first insulating insert 1 and the second insulating insert 2 are made of low-DK LCP material to reduce the high insertion loss of signal traces caused by low-DK LCP material. The pressure resistance of the wafer is ensured by the setting of the metal reinforcing sheet 7 and the distribution of the hot-riveting posts. In other embodiments of the invention, high- and low-DK LCP materials can also be used directly, in which case the pressure resistance of the wafer is better.

[0033] The pressure-bearing capacity of the wafer of this invention was tested, and the simulation results are as follows. Figure 7 and Figure 8 As shown, Figure 7 and Figure 8Stress cloud diagrams are shown for one side of the wafer when pressed with a micro-hole and the other side of the wafer, respectively. The structural strength of the wafer was evaluated by applying pressure to both sides. The FEA results show that when the load is in place, the stress in the section of the hot-riveted column is relatively small, the structural strength is good, the hot-riveted column structure is safe, and the overall stress of the wafer of this invention is relatively small, indicating good structural strength.

[0034] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.

Claims

1. A novel wafer structure comprising two insulating inserts, each insulating insert having multiple signal terminals injection-molded within it, and each insulating insert having multiple wiring grooves, characterized in that: The signal terminal routing area is suspended in the corresponding routing groove; several limiting protrusions are staggered on the two side walls of the routing groove along its extension direction. The limiting protrusions are used to wrap the two sides of the routing area. The opposite side of the wrapped area of ​​the routing area is provided with a notch. The notch is used to adjust the impedance change of the routing area caused by the other side edge being wrapped by the limiting protrusion.

2. The novel wafer structure according to claim 1, characterized in that: The area around the edge of the wiring area that is enclosed by the limiting protrusion is rectangular, and the opening opposite the enclosed area is an isosceles trapezoid.

3. The novel wafer structure according to claim 1 or 2, characterized in that: The tail region of the insulating insert is provided with a metal reinforcing plate to enhance its pressure-bearing capacity. The metal reinforcing plate is wrapped inside the insulating insert and integrally formed with the insulating insert.

4. The novel wafer structure according to claim 3, characterized in that: The distance between the metal reinforcing sheet and the wiring groove is greater than 2mm.

5. The novel wafer structure according to claim 3, characterized in that: The ratio between the extension length of the insulating insert along the signal terminal insertion direction and the extension length along the signal terminal crimping direction is not less than 1.5:

1.

6. The novel wafer structure according to claim 5, characterized in that: The extension length of the tail region of the insulating insert along the signal terminal mating direction is not less than 2.9 mm.

7. The novel wafer structure according to claim 5, characterized in that: The metal reinforcing sheet is L-shaped in general, including a first side extending along the signal terminal mating direction and distributed on the edge of the insulating insert away from the signal terminal crimping end, and a second side extending along the signal terminal crimping direction and distributed on the edge of the insulating insert away from the signal terminal mating end, and the extension length of the second side along the signal terminal mating direction is not less than 1mm.

8. The novel wafer structure according to claim 7, characterized in that: The first side and the second side intersect perpendicularly to form a connecting part, and the side of the connecting part facing the signal terminal mating area is an oblique side that intersects both the first side and the second side.

9. The novel wafer structure according to claim 7, characterized in that: The metal reinforcing sheet is a copper busbar.

10. The novel wafer structure according to any one of claims 1-2 and 4-9, characterized in that: The insulating insert is also provided with a plurality of hot riveting posts. In the tail area and near the signal terminal mating area and crimping area, the radial dimension of the hot riveting posts is larger than that of the hot riveting posts in other areas.

11. The novel wafer structure according to claim 10, characterized in that: The insulating insert is made of low-DK LCP material.

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