A wet preparation method of an InP-based quantum cascade laser double-channel curved ridge waveguide
By using a specific ratio of etching solution and a precisely controlled etching process, the fabrication challenge of dual-channel curved waveguides for InP-based quantum cascade lasers was solved, resulting in a high-performance curved ridge waveguide structure suitable for mass production.
CN122246570APending Publication Date: 2026-06-1911TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
- Filing Date
- 2026-02-06
- Publication Date
- 2026-06-19
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Figure CN122246570A_ABST
Abstract
This application discloses a wet fabrication method for a dual-channel curved ridge waveguide of an InP-based quantum cascade laser, relating to semiconductor and precision waveguide processing technology. The method includes: forming a photoresist mask with a dual-channel curved ridge waveguide pattern on an epitaxial wafer of an InP-based quantum cascade laser; preparing an etching solution containing hydrobromic acid (HBr), hydrochloric acid (HCl), hydrogen peroxide (H2O2), and deionized water (H2O); using the pre-treated etching solution, etching the areas of the epitaxial wafer not covered by the photoresist mask under light-shielded conditions; and rinsing the sample in flowing deionized water after etching to terminate the reaction. This method overcomes the shortcomings of existing etching processes for dual-channel curved waveguides of InP-based quantum cascade lasers, such as complexity, difficulty in precise control, and uneven sidewall morphology.
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