High mobility high thermal stress stability thin film transistor and preparation method and application thereof

By introducing the synergistic effect of a metal-induced layer and an oxygen plasma passivation layer into a thin-film transistor, the contradiction between high mobility and high thermal stress stability is resolved, realizing a thin-film transistor with both high mobility and thermal stress stability, suitable for high-end applications such as OLED pixel driving.

CN122248750APending Publication Date: 2026-06-19NINGBO INST OF MATERIALS TECH & ENG CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACAD OF SCI
Filing Date
2026-03-06
Publication Date
2026-06-19

AI Technical Summary

Technical Problem

Existing technologies struggle to simultaneously achieve high mobility and high thermal stress stability in oxide thin-film transistors under low thermal budgets, making it difficult to guarantee in-plane uniformity and batch consistency of the devices. Furthermore, the passivation layer may introduce oxygen migration/redox reactions during the metal-induced process, leading to increased threshold voltage drift.

Method used

After forming a gate electrode, a gate dielectric layer, and a metal oxide semiconductor channel layer on a substrate, a patterned metal induction layer is formed on the side of the channel layer away from the gate dielectric layer using photolithography and then induced annealing is performed. Combined with plasma-enhanced atomic layer deposition, oxygen plasma is used as an oxygen precursor to form a passivation layer. The annealing temperature and process parameters are controlled to form a dense passivation layer, which compensates for oxygen defects in the back channel and suppresses water and oxygen adsorption.

Benefits of technology

It achieves a synergistic improvement in high mobility and thermal stress stability. The threshold voltage drift of the thin-film transistor under positive bias thermal stress is less than 0.5 V, making it suitable for high-end applications such as OLED pixel driving.

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Abstract

This invention discloses a high-mobility, high-thermal-stress-stability thin-film transistor, its fabrication method, and its applications. The fabrication method includes: sequentially forming a gate electrode, a gate dielectric layer, and a metal-oxide-semiconductor channel layer on a substrate; forming a patterned metal-inducing layer on the side of the channel layer away from the gate dielectric layer using photolithography, followed by induced annealing to form a crystalline region near the metal-inducing layer in the thickness direction of the channel layer, while retaining an amorphous region in the thickness direction of the channel layer; forming a source and a drain on the channel layer, wherein the source and drain are offset from the metal-inducing layer in the channel width direction; and forming a passivation layer on the channel layer, the metal-inducing layer, and the source and drain using plasma-enhanced atomic layer deposition (PAL) with oxygen plasma as an oxygen precursor, followed by annealing at a temperature of 280–320 °C to obtain the thin-film transistor.
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