A glue-free bonding method of a mercury cadmium telluride annular hole focal plane detector, a mercury cadmium telluride annular hole focal plane detector and a preparation method

Abstract

This invention discloses a glue-free bonding method for a mercury cadmium telluride (HCDT) ring-aperture focal plane detector, the HCDT ring-aperture focal plane detector itself, and its fabrication method, belonging to the field of semiconductor infrared detector fabrication technology. This glue-free bonding method achieves glue-free bonding between the HCDT material and the readout circuit substrate through a Parylene bonding layer. This invention overcomes the inherent defects of traditional epoxy adhesive bonding processes, such as long curing time, easy introduction of air bubbles and voids, thermal expansion mismatch, uneven thickness, and impurity residue, thus meeting the mass production requirements of high-performance HCDT ring-aperture focal plane detectors.

Description

Technical Field

[0001] This invention relates to the field of semiconductor infrared detector fabrication technology, specifically to a glue-free bonding method for a mercury cadmium telluride ring aperture focal plane detector, the mercury cadmium telluride ring aperture focal plane detector, and its fabrication method. Background Technology

[0002] Mercury cadmium telluride (MDT) infrared detectors are widely used in fields such as train axle monitoring, forest fire prevention, and security protection due to their outstanding advantages, including flexible and adjustable response bands, high responsivity, fast response speed, and low noise. MDT annular aperture focal plane detectors typically employ a process of first mounting the photosensitive chip and readout circuit substrate, followed by annular aperture etching and electrode extraction. This fabrication process demands extremely high standards for interface cleanliness, density, uniformity, and structural stability. Traditional epoxy adhesive bonding processes suffer from several inherent drawbacks: epoxy adhesive bonding easily introduces air bubbles and voids, thermal expansion mismatch, uneven thickness, and residual impurities, directly leading to decreased device conductivity and increased dead cell rate. Furthermore, epoxy curing relies on the cross-linking reaction between the resin and the curing agent, resulting in long curing times and temperature sensitivity, severely limiting the efficiency of large-scale device production. Additionally, temperature changes and volume shrinkage during curing further exacerbate interfacial thermal stress, affecting the structural stability of the device. Parylene can be deposited in the vacuum phase, and has the characteristics of clean interface, good shape preservation, low internal stress and short bonding time. It can effectively improve the defects caused by the adhesive layer. At the same time, it is suitable for the mercury cadmium telluride ring hole structure and low temperature process requirements, and has good application prospects in adhesive-free bonding of mercury cadmium telluride ring hole focal plane detectors. Summary of the Invention

[0003] To address the aforementioned technical problems, this invention provides a glue-free bonding method for a mercury cadmium telluride ring aperture focal plane detector.

[0004] The further technical problem to be solved by the present invention is to provide a mercury cadmium telluride ring aperture focal plane detector and its preparation method.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A glue-free bonding method for a mercury cadmium telluride (HCd) annular aperture focal plane detector is disclosed, which achieves glue-free bonding of HCdD material to the readout circuit substrate through a Parylene bonding layer. Specifically, the Parylene bonding layer is a Parylene thin film.

[0007] The glue-free bonding method for the mercury cadmium telluride ring aperture focal plane detector specifically includes the following steps:

[0008] (1) Material pretreatment: The mercury cadmium telluride material is pretreated, and a passivation film is grown after the pretreatment is completed;

[0009] (2) Pirilin vapor deposition: p-xylene ring dimer is vaporized and cracked sequentially to form active free radicals. Under vacuum conditions of 1 Pa-10 Pa, Pirilin bonding layer is formed on the bonding surface of mercury cadmium telluride material and readout circuit substrate obtained in step (1) by vacuum vapor deposition.

[0010] (3) Cleaning treatment: The product obtained in step (2) is soaked in acetone and isopropanol in sequence to remove surface organic impurities and oil stains, then rinsed with deionized water to remove residual reagents, and finally dried with high-purity nitrogen.

[0011] (4) Adhesive-free bonding: The mercury cadmium telluride material obtained in step (3) and the readout circuit substrate are placed in a vacuum bonding machine for alignment. Under preset vacuum, temperature and pressure conditions, adhesive-free bonding is achieved through the Piriton bonding layer.

[0012] The passivation film mentioned in step (1) is a CdTe / ZnS composite film.

[0013] The total thickness of the CdTe / ZnS composite film is 40 nm-60 nm, with the CdTe buffer layer having a thickness of 25 nm-35 nm and the ZnS top layer having a thickness of 15 nm-25 nm.

[0014] In step (2), the vaporization temperature of the p-xylene ring dimer is 120℃-150℃, and the pyrolysis chamber temperature is 660℃-700℃.

[0015] In step (2), the thickness of the phenelzine bonding layer on the surface of mercury cadmium telluride material is 500 nm-1000 nm; in step (2), the thickness of the phenelzine bonding layer on the surface of the readout circuit substrate is 500 nm-1000 nm.

[0016] In step (4), the preset vacuum level is 1×10⁻⁶. -4 mbar-1×10 -3 mbar, temperature 85℃-150℃, applied pressure 60 kg-80 kg.

[0017] Specifically, step (2) involves placing the p-xylene ring dimer into the evaporation chamber of a Piriton vapor deposition furnace and heating it to 120°C-150°C to completely vaporize it. The vaporized monomer is then introduced into a pyrolysis chamber at 660°C-700°C to pyrolyze it into active free radicals. Subsequently, the active free radicals are introduced into the deposition chamber, where the vacuum level is maintained at 1 Pa-10 Pa. The active free radicals polymerize on the surface of the mercury cadmium telluride material and the bonding surface of the readout circuit substrate to form Piriton bonding layers.

[0018] A method for fabricating a mercury cadmium telluride ring aperture focal plane detector, which, following the above-mentioned glue-free bonding method for a mercury cadmium telluride ring aperture focal plane detector, further includes the following steps:

[0019] First, a chemical etching method is used to remove the substrate from the mercury cadmium telluride (MDT) layer. Then, a passivation film is prepared by passivation treatment on the surface of the device layer. Subsequently, photolithography and etching processes are used to prepare the ring hole pn junction to form the ring hole array structure of the detector core. Finally, magnetron sputtering technology is used to prepare metallized electrodes to achieve efficient electrical signal transmission between the MDT device layer and the readout circuit, ultimately forming a complete MDT ring hole focal plane detector.

[0020] A mercury cadmium telluride ring aperture focal plane detector is prepared using the above-described method for preparing a mercury cadmium telluride ring aperture focal plane detector.

[0021] The beneficial effects of this invention are as follows:

[0022] (1) This invention achieves glue-free bonding between mercury cadmium telluride material and readout circuit substrate through the Perrylin bonding layer, which solves the inherent defects of traditional epoxy adhesive bonding process such as long curing time, easy introduction of air bubbles and voids, thermal expansion mismatch, uneven thickness and impurity residue, and meets the mass production requirements of high-performance mercury cadmium telluride ring aperture focal plane detector.

[0023] (2) This invention utilizes the conformal properties and molecular-level bonding mechanism of phenelzine vapor deposition in vacuum to serve as a glue-free bonding layer between mercury cadmium telluride (MDT) and the readout circuit substrate. Considering the characteristics of MDT and the process characteristics of the annular hole structure—first mounting the wafer and then etching the annular holes and leading out the electrodes—the key process parameters for phenelzine deposition and bonding are optimized. A complete process scheme is designed, including material pretreatment, phenelzine vapor deposition, pre-bonding cleaning, and phenelzine glue-free bonding. Specifically, MDT is pretreated and CdTe / Zn is grown. S-composite passivation films provide a high-quality substrate for Parylene deposition. By precisely controlling the evaporation temperature, pyrolysis temperature, vacuum level, and film thickness of Parylene vapor deposition, the films are ensured to be uniform, dense, and free of pinholes. Cleaning before bonding ensures the cleanliness of the bonding interface. By matching the bonding parameters to the glass transition temperature of Parylene, a strong adhesive-free bond between the mercury cadmium telluride (HCDT) material and the substrate is achieved, while avoiding the degradation effect of high temperature on the performance of HCDT. Finally, combined with subsequent molding processes, a high-performance HCDT annular aperture focal plane detector is obtained. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the structure of the mercury cadmium telluride ring aperture focal plane detector of the present invention.

[0025] Figure 2 This is a process flow diagram of the glue-free bonding fabrication method for the mercury cadmium telluride ring aperture focal plane detector of the present invention.

[0026] Figure 3 This is a schematic diagram of the process of Piriton vapor deposition according to the present invention.

[0027] Figure 4 This is a schematic diagram of the entanglement of the phenelzine molecular chain.

[0028] The figures are labeled as follows: 1-passivation film; 2-mercury cadmium telluride material; 3-Pyrelin bonding layer; 4-readout circuit substrate; 5-metal electrode; 100-evaporation chamber; 200-pyrolysis chamber; 300-deposition chamber; 400-cold trap; 500-vacuum pump; 310-sample holder. Detailed Implementation

[0029] To more clearly illustrate the objectives, technical solutions, and advantages of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. Furthermore, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0030] Parylene possesses unique conformal properties in vacuum vapor deposition. Its film formation process involves the vaporization and high-temperature pyrolysis of p-xylene dimer to form active free radicals, which are then condensed and polymerized on the substrate surface to form a continuous, pinhole-free, uniform film. Parylene offers significant advantages in addressing thermal expansion mismatch issues. Firstly, it utilizes room-temperature vacuum vapor deposition, eliminating the need for additional heating and curing processes, thus avoiding thermal expansion stress caused by temperature differences. Secondly, the film exhibits excellent flexibility, buffering the difference in thermal expansion coefficients between the mercury cadmium telluride material 2 and the substrate, reducing interfacial stress concentration during temperature cycling, and preventing interfacial delamination or cracking.

[0031] Figure 4 This is a schematic diagram of the entanglement of the phenelzine molecular chain. (See also:) Figure 4 When the temperature of the phenelzine bonded layer 3 approaches its glass transition temperature, the phenelzine molecular chains undergo thermal motion. Simultaneously, pressure is applied by the bonding machine, and the surface molecules of the two phenelzine bonded layers 3 achieve tight bonding through van der Waals forces, physical chain entanglement, and molecular diffusion, forming a glue-free bonding interface. Specifically, the bonding principle of phenelzine is as follows: when the film temperature approaches its glass transition temperature, the activity of the molecular chain segments is significantly enhanced. Under the synergistic effect of suitable temperature and pressure, tight bonding can be achieved through intermolecular van der Waals forces, physical chain entanglement, and interfacial molecular diffusion, forming a strong bonding interface without the need for additional adhesives. The bonding temperature can be adjusted according to the glass transition temperature matched to different types of phenelzine, and stable glue-free bonding can be achieved.

[0032] Adhesive-free bonding is the core direction for breaking through the limitations of traditional epoxy adhesive bonding processes. The inventors discovered that the vapor deposition film-forming properties of Pirilin can precisely match the uniform coating requirements of planar substrates. Its molecular-level bonding mechanism can fundamentally avoid the inherent defects introduced by the adhesive layer, making it a high-quality material for adhesive-free bonding.

[0033] Preparation of experimental materials and equipment:

[0034] The following materials were selected: qualified mercury cadmium telluride material 2, p-xylene ring dimer with a purity ≥99.9%, high-purity CdTe / ZnS raw materials, and suitable readout circuit substrate 4; the experimental equipment selected included a Perelin vapor deposition furnace, a vacuum bonding machine, a molecular beam epitaxy system, and a thermal evaporation system.

[0035] See Figure 1 , Figure 1 This is a schematic diagram of the overall structure of the mercury cadmium telluride ring aperture focal plane detector obtained in Example 1. The mercury cadmium telluride material 2 is the photosensitive layer, and its interior is etched to form p-type and n-type regions to form a photodiode structure for photoelectric conversion. Both its upper and lower surfaces are passivated and protected by passivation films 1. The Parylene bonding layer 3 is located between the lower surface of the mercury cadmium telluride material 2 and the upper surface of the readout circuit substrate 4, and the two heterogeneous substrates are bonded through the Parylene bonding layer 3. The readout circuit substrate 4 is located below the Parylene bonding layer 3 and is used to receive the electrical signals generated by the photosensitive layer. The metal electrode 5 is deposited in the n-type and p-type regions of the mercury cadmium telluride material 2 to realize the transmission of electrical signals between the mercury cadmium telluride material 2 and the readout circuit substrate 4.

[0036] See Figure 2 The method for preparing the mercury cadmium telluride ring aperture focal plane detector of the present invention includes the following steps:

[0037] 1. Pretreatment of mercury cadmium telluride material 2.

[0038] The mercury cadmium telluride material 2 was subjected to ultrasonic cleaning, organic impurity removal, and oxide layer corrosion pretreatment in sequence. After the pretreatment, a passivation film 1 with a total thickness of 50 nm was grown by molecular beam epitaxy and thermal evaporation technology. In this embodiment, the passivation film 1 is a CdTe / ZnS composite passivation film, wherein the CdTe buffer layer is 30 nm thick and the ZnS top layer is 20 nm thick. The CdTe / ZnS composite passivation film is used to optimize the surface electrical properties and flatness of the material.

[0039] 2. Perylene vapor deposition.

[0040] See Figure 3The equipment used in the Parylene vapor deposition process includes an interconnected evaporation chamber 100, a pyrolysis chamber 200, and a deposition chamber 300. A sample holder 310 is also installed in the deposition chamber 300, on which the sample to be deposited is placed. A vacuum pump 500 is used to control the vacuum level during the process and guide the movement of gas molecules. The deposition chamber 300 is also connected to a cold trap 400, where undeposited monomer molecules are condensed and collected.

[0041] See Figure 3 The p-xylene ring dimer was placed in the evaporation chamber 100 of the Pyrelin vapor deposition furnace and heated to 150°C to completely vaporize it. The vaporized monomer was then introduced into the pyrolysis chamber 200 at 680°C and pyrolyzed into active free radicals. Subsequently, the active free radicals were introduced into the deposition chamber 300, where the vacuum level was maintained at 1 Pa-10 Pa. The active free radicals polymerized on the surface of the mercury cadmium telluride material 2 and the bonding surface of the readout circuit substrate 4 to form a Pyrelin bonding layer 3 with a thickness of 800 nm. Through precise temperature control and vacuum adjustment, the Pyrelin bonding layer 3 was ensured to be uniform, dense, free of pinholes, and have excellent adhesion, meeting the interface performance requirements of subsequent glue-free bonding and ring-hole etching processes.

[0042] 3. Cleaning before bonding.

[0043] After the Pirilin deposition process is completed, the sample is cleaned before bonding: the sample is immersed in acetone and isopropanol solutions for 10 minutes each to thoroughly remove organic impurities and oil stains attached to the surface; then it is ultrasonically rinsed with deionized water for 5 minutes to remove residual solvent and impurities; finally, high-purity nitrogen is blown dry along the sample surface at a uniform speed to ensure that the surface of the Pirilin bonding layer 3 is clean and free of residue, reducing the impact of interface impurities on the bonding effect.

[0044] 4. Perylene glue-free bonding.

[0045] The cleaned mercury cadmium telluride material 2 and the readout circuit substrate 4 are placed into the bonding cavity of the vacuum bonding machine for precise alignment; the equipment is then started and a vacuum is evacuated to 1×10⁻⁶. -4 mbar-1×10 -3 The bonding cavity temperature was raised to the appropriate temperature at a heating rate of 5 °C / min using mbar. A pressure of 60 kg-80 kg was applied to the bonding stage, and the temperature and pressure were maintained for 60 minutes to complete the glue-free bonding of the mercury cadmium telluride material 2 and the readout circuit substrate 4. After bonding, the interface performance was tested, and the results showed that the interface had no voids and no delamination, meeting the structural stability requirements of the detector.

[0046] 5. Form a ring aperture focal plane detector.

[0047] After bonding is completed, subsequent forming processes are carried out based on the stable Parylene bonding layer 3: First, the substrate removal process of mercury cadmium telluride is carried out by chemical etching to remove the redundant substrate and retain the device layer that meets the detection performance requirements; then, the surface of the device layer is passivated to prepare a passivation film 1 to meet the electrical performance requirements of the device; then, the ring hole pn junction is prepared by photolithography and etching processes to form the ring hole array structure of the detector core; finally, the metallization electrode is prepared by magnetron sputtering technology to realize efficient electrical signal transmission between the mercury cadmium telluride device layer and the readout circuit, and finally a complete mercury cadmium telluride ring hole focal plane detector is formed.

[0048] Example 1:

[0049] This embodiment provides a glue-free bonding method for a standard structure mercury cadmium telluride ring aperture focal plane detector, specifically including the following steps:

[0050] 1. Pretreatment of Mercury Cadmium Telluride Material 2: Mercury Cadmium Telluride Material 2 was subjected to ultrasonic cleaning, organic impurity removal and oxide layer stripping pretreatment in sequence; after the pretreatment, a CdTe / ZnS composite film with a total thickness of 50 nm was grown by molecular beam epitaxy and thermal evaporation technology, wherein the CdTe buffer layer was 30 nm thick and the ZnS top layer was 20 nm thick, to optimize the surface smoothness and structural stability of the material and adapt to the requirements of the subsequent Parylene deposition process.

[0051] 2. Pyrelin Vapor Deposition: The C-type p-xylene ring dimer is placed in the evaporation chamber 100 of the Pyrelin vapor deposition furnace and heated to 150°C to completely vaporize it. The vaporized monomer is then introduced into the pyrolysis chamber 200 at 680°C and pyrolyzed into active free radicals. Subsequently, the active free radicals are introduced into the deposition chamber 300, and the vacuum degree of the deposition chamber 300 is maintained at 1 Pa-10 Pa. The active free radicals polymerize on the surface of the mercury cadmium telluride material 2 and the bonding surface of the readout circuit substrate 4 to form a C-type Pyrelin bonding layer 3 with a thickness of 1000 nm. Through precise temperature control and vacuum degree adjustment, the Pyrelin bonding layer 3 is ensured to be uniform, dense, free of pinholes, and have excellent adhesion.

[0052] 3. Cleaning before bonding: Immerse the sample obtained by vapor deposition in acetone and isopropanol solutions for 10 minutes each to remove organic impurities and oil stains on the surface; then ultrasonically rinse with deionized water for 5 minutes to remove residual solvent and impurities; finally, blow dry the sample surface with high-purity nitrogen at a uniform speed to ensure that the surface of the Pirilin bonding layer 3 is clean and free of residue.

[0053] 4. Perylene glue-free bonding: Place the mercury cadmium telluride material 2 and the readout circuit substrate 4 into the bonding cavity of the vacuum bonding machine and complete precise alignment; evacuate to 1×10 -4The temperature was increased to 150°C at a rate of 5°C / min, and 80 kg of pressure was applied and maintained for 60 minutes to complete the glue-free bonding. After bonding, the interface was found to be free of voids and delamination.

[0054] 5. Formation of a ring aperture focal plane detector: A complete mercury cadmium telluride ring aperture focal plane detector is prepared through processes such as chemical etching to remove the substrate, growth of passivation film 1, etching to form a ring aperture pn junction, and magnetron sputtering of metallized electrodes.

[0055] Example 2:

[0056] This embodiment provides a glue-free bonding method for a standard structure mercury cadmium telluride ring aperture focal plane detector, specifically including the following steps:

[0057] 1. Pretreatment of mercury cadmium telluride material 2: The steps are the same as in Example 1, and a CdTe / ZnS composite film with a total thickness of 50 nm is grown to optimize the surface smoothness and structural stability of the material.

[0058] 2. Pyrelin Vapor Deposition: The N-type p-xylene ring dimer is placed in the evaporation chamber 100 of the Pyrelin vapor deposition furnace and heated to 140°C to completely vaporize it. The vaporized monomer is then introduced into the pyrolysis chamber 200 at 670°C and pyrolyzed into active free radicals. Subsequently, the active free radicals are introduced into the deposition chamber 300, and the vacuum degree of the deposition chamber 300 is maintained at 1 Pa-10 Pa. The active free radicals polymerize on the surface of the mercury cadmium telluride material 2 and the bonding surface of the readout circuit substrate 4 to form an N-type Pyrelin bonding layer 3 with a thickness of 600 nm. Through precise temperature control and vacuum degree adjustment, the Pyrelin bonding layer 3 is ensured to be uniform, dense, free of pinholes, and have excellent adhesion.

[0059] 3. Cleaning before bonding: The steps are the same as in Example 1, to ensure that the surface of the Piriton bonding layer 3 is clean and free of residue.

[0060] 4. Perylene glue-free bonding: Place the mercury cadmium telluride material 2 and the readout circuit substrate 4 into the bonding cavity of the vacuum bonding machine and complete precise alignment; evacuate to 1×10 -4 The temperature was increased to 130°C at a rate of 5°C / min, and a pressure of 60 kg was applied and maintained for 60 minutes to complete the glue-free bonding. After bonding, the interface was found to be free of voids and delamination.

[0061] 5. Forming a ring aperture focal plane detector: Following the same steps as in Example 1, a complete mercury cadmium telluride ring aperture focal plane detector is prepared. Due to the lower bonding temperature, the photoelectric properties of the mercury cadmium telluride material 2 are not thermally damaged, and the device performance is more consistent.

[0062] In summary, this invention uses a phenelzine thin film as the bonding layer, sequentially completing the pretreatment of mercury cadmium telluride material 2, phenelzine vapor deposition, pre-bonding cleaning, and phenelzine adhesive-free bonding core processes. It also includes subsequent ring-hole focal plane device forming steps. Specifically, after pretreatment, a CdTe / ZnS composite film with a total thickness of 40-60 nm is grown. The vapor deposition precisely controls the evaporation temperature of the p-xylene ring dimer at 120℃-150℃, the pyrolysis temperature at 660℃-700℃, and the vacuum degree at 1 Pa-10 Pa. The bonding temperature is matched appropriately according to the phenelzine type, achieving a bonding temperature of 1×10⁻⁶ Pa. -4 mbar-1×10 -3 Bonding is completed under mbar vacuum and 60 kg-80 kg pressure for 60 minutes. This invention fundamentally solves the problems of impurity residue, thermal expansion mismatch, and long curing cycle in traditional epoxy adhesive bonding processes, shortening the device production cycle by more than 80%. It is void-free and delamination-free, significantly improving the mechanical stability, environmental resistance, and detection performance of the device. It also has good compatibility with existing semiconductor production lines and can achieve mass production.

[0063] Those skilled in the art will readily understand that the above description is merely a preferred embodiment of the present invention. The above embodiments are provided only for the purpose of describing the present invention and are not intended to limit the present invention. Parts not described in detail in this specification are well-known in the art and are not intended to limit the scope of the present invention. The scope of the present invention is defined by the appended claims. All equivalent substitutions and modifications made without departing from the spirit and principle of the present invention should be covered within the scope of the present invention.

Claims

1. A glue-free bonding method for a mercury cadmium telluride ring aperture focal plane detector, characterized in that, This glue-free bonding method achieves glue-free bonding of mercury cadmium telluride material to the readout circuit substrate through a pyrelin bonding layer.

2. The glue-free bonding method for the mercury cadmium telluride ring aperture focal plane detector according to claim 1, characterized in that, The glue-free bonding method for mercury cadmium telluride ring aperture focal plane detectors specifically includes the following steps: (1) Material pretreatment: The mercury cadmium telluride material is pretreated, and a passivation film is grown after the pretreatment is completed; (2) Pirilin vapor deposition: p-xylene ring dimer is vaporized and cracked sequentially to form active free radicals. Under vacuum conditions of 1 Pa-10 Pa, Pirilin bonding layer is formed on the bonding surface of mercury cadmium telluride material and readout circuit substrate obtained in step (1) by vacuum vapor deposition. (3) Cleaning treatment: The product obtained in step (2) is soaked in acetone and isopropanol in sequence to remove surface organic impurities and oil stains, then rinsed with deionized water to remove residual reagents, and finally dried with high-purity nitrogen. (4) Adhesive-free bonding: The mercury cadmium telluride material obtained in step (3) and the readout circuit substrate are placed in a vacuum bonding machine for alignment. Under preset vacuum, temperature and pressure conditions, adhesive-free bonding is achieved through the Piriton bonding layer.

3. The glue-free bonding method for the mercury cadmium telluride ring aperture focal plane detector according to claim 2, characterized in that, The passivation film mentioned in step (1) is a CdTe / ZnS composite film.

4. The glue-free bonding method for the mercury cadmium telluride ring aperture focal plane detector according to claim 2, characterized in that, In step (2), the vaporization temperature of the p-xylene ring dimer is 120℃-150℃, and the pyrolysis chamber temperature is 660℃-700℃.

5. The glue-free bonding method for the mercury cadmium telluride ring aperture focal plane detector according to claim 2, characterized in that, In step (2), the thickness of the phenelzine bonding layer on the surface of mercury cadmium telluride material is 500 nm-1000 nm; in step (2), the thickness of the phenelzine bonding layer on the surface of the readout circuit substrate is 500 nm-1000 nm.

6. The glue-free bonding method for the mercury cadmium telluride ring aperture focal plane detector according to claim 3, characterized in that, The total thickness of the CdTe / ZnS composite film is 40 nm-60 nm, of which the CdTe buffer layer is 25 nm-35 nm thick and the ZnS top layer is 15 nm-25 nm thick.

7. The glue-free bonding method for the mercury cadmium telluride ring aperture focal plane detector according to claim 2, characterized in that, In step (4), the preset vacuum level is 1×10⁻⁶. -4 mbar-1×10 -3 mbar, temperature 85℃-150℃, applied pressure 60 kg-80 kg.

8. The glue-free bonding method for the mercury cadmium telluride ring aperture focal plane detector according to claim 2, characterized in that, Step (2) involves placing the p-xylene ring dimer into the evaporation chamber of a Piriton vapor deposition furnace and heating it to 120°C-150°C to completely vaporize it. The vaporized monomer is then introduced into a pyrolysis chamber at 660°C-700°C to pyrolyze it into active free radicals. Subsequently, the active free radicals are introduced into the deposition chamber, where the vacuum level is maintained at 1 Pa-10 Pa. The active free radicals polymerize on the surface of the mercury cadmium telluride material and the bonding surface of the readout circuit substrate to form Piriton bonding layers.

9. A method for fabricating a mercury cadmium telluride ring aperture focal plane detector, characterized in that, Following the glue-free bonding method for the mercury cadmium telluride annular focal plane detector according to any one of claims 1 to 8, the method further includes the following steps: First, a chemical etching method is used to remove the substrate from the mercury cadmium telluride (MDT) layer. Then, a passivation film is prepared by passivation treatment on the surface of the device layer. Subsequently, photolithography and etching processes are used to prepare the ring hole pn junction to form the ring hole array structure of the detector core. Finally, magnetron sputtering technology is used to prepare metallized electrodes to achieve efficient electrical signal transmission between the MDT device layer and the readout circuit, ultimately forming a complete MDT ring hole focal plane detector.

10. A mercury cadmium telluride ring aperture focal plane detector, characterized in that, It is prepared using the method for preparing the mercury cadmium telluride ring aperture focal plane detector as described in claim 9.

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