Solar cells, modules, passivated contact structures and methods of manufacture and photovoltaic systems
By employing a stacked structure of a first barrier layer, a gallium-doped silicon material layer, a second barrier layer, and a boron-doped silicon material layer in the solar cell, the problems of high interface defect density and high contact resistance in the P-TOPCon type passivation contact structure are solved, achieving efficient passivation and low contact resistance, and improving the photoelectric conversion efficiency of the cell.
CN122248848APending Publication Date: 2026-06-19ZHUHAI FUSHAN AIKO SOLAR ENERGY TECH CO LTD +3
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ZHUHAI FUSHAN AIKO SOLAR ENERGY TECH CO LTD
- Filing Date
- 2026-03-25
- Publication Date
- 2026-06-19
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Figure CN122248848A_ABST
Abstract
This disclosure provides a solar cell, module, passivated contact structure, fabrication method, and photovoltaic system. The solar cell passivated contact structure includes a first barrier layer, a gallium-doped silicon material layer, a second barrier layer, and a boron-doped silicon material layer sequentially stacked on a silicon substrate. The gallium-doped silicon material layer ensures minimal Ga diffusion within the silicon substrate under the first barrier layer, thereby guaranteeing a high passivation level. The boron-doped silicon material layer incorporates a small amount of boron after passing through the second barrier layer, extending to the side adjacent to the second barrier layer without entering the first barrier layer or the silicon substrate, thus preventing passivation from being affected by boron. The boron-doped silicon material layer ensures low contact resistance with the metal electrode, ultimately achieving high passivation and low contact resistance, significantly improving cell conversion efficiency.
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