Light emitting diode and method of manufacturing the same

Abstract

This disclosure provides a light-emitting diode and a method for fabricating the same. The light-emitting diode includes: an epitaxial structure, a first insulating layer, and an electrode structure; the first insulating layer covers the surface of the epitaxial structure, and the first insulating layer includes at least one periodically alternating stacked first insulator layer and second insulator layer, wherein the layer closest to the epitaxial structure is the first insulator layer, the first insulator layer is an Al2O3 layer, and the second insulator layer is a SiO2 layer; the electrode structure passes through the first insulating layer and is electrically connected to the epitaxial structure.

Description

Technical Field

[0001] This disclosure relates to the field of light-emitting devices, and in particular to a light-emitting diode and a method for fabricating the same. Background Technology

[0002] A light-emitting diode (LED) is a semiconductor device that emits light.

[0003] The related technology provides a light-emitting diode, the structure of which includes an epitaxial structure, an insulating layer, and an electrode structure. The insulating layer covers the epitaxial structure, and the electrode structure passes through the insulating layer and is electrically connected to the epitaxial structure.

[0004] In the above-mentioned structure of light-emitting diodes, the insulating layer has poor density and is prone to breakage, which leads to leakage current and low yield. Summary of the Invention

[0005] This disclosure provides a light-emitting diode (LED) and its fabrication method, which can significantly improve the leakage current problem of LEDs and increase the yield of LEDs. The technical solution is as follows: On one hand, a light-emitting diode is provided, the light-emitting diode comprising: an epitaxial structure, a first insulating layer, and an electrode structure; The first insulating layer covers the surface of the epitaxial structure. The first insulating layer includes at least one periodically alternating stacked first insulator layer and second insulator layer, and the layer closest to the epitaxial structure is the first insulator layer. The first insulator layer is an Al2O3 layer, and the second insulator layer is a SiO2 layer. The electrode structure passes through the first insulating layer and is electrically connected to the epitaxial structure.

[0006] Optionally, the first insulating layer comprises four to six alternating layers of the first insulator layer and the second insulator layer; The thickness of the first insulator layer is 500~1200 angstroms, and the thickness of the second insulator layer is 1500~2500 angstroms.

[0007] Optionally, the thickness of the first insulator layer closest to the epitaxial structure is greater than the thickness of the other first insulator layers; The thickness of the second insulator layer closest to the epitaxial structure is greater than the thickness of the other second insulator layers.

[0008] Optionally, the first insulating layer comprises four cycles of alternating layers of the first insulator layer and the second insulator layer; The thicknesses of each of the first insulator layers and the second insulator layers in the first insulating layer are 1000 angstroms, 2000 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms and 1500 angstroms respectively.

[0009] Optionally, the light-emitting diode further includes: a second insulating layer and a pad structure; The second insulating layer covers the first insulating layer and the electrode structure; The second insulating layer comprises at least one periodically alternating stacked first insulating layer and second insulating layer, wherein the layer closest to the first insulating layer is the first insulating layer; The pad structure passes through the second insulating layer and is electrically connected to the electrode structure.

[0010] Optionally, the second insulating layer comprises four to six alternating layers of the first insulator layer and the second insulator layer; The thickness of the first insulator layer is 500~1200 angstroms, and the thickness of the second insulator layer is 1500~2500 angstroms.

[0011] On the other hand, a method for fabricating a light-emitting diode is provided, the method comprising: Fabrication of epitaxial structures; A first insulating layer is fabricated, which covers the surface of the epitaxial structure. The first insulating layer includes at least one periodically alternating stacked first insulator layer and second insulator layer, and the layer closest to the epitaxial structure is the first insulator layer. The first insulator layer is an Al2O3 layer, and the second insulator layer is a SiO2 layer. An electrode structure is fabricated, which passes through the first insulating layer and is electrically connected to the epitaxial structure.

[0012] Optionally, the fabrication of the first insulating layer includes: An Al2O3 layer is fabricated on the surface of the epitaxial structure using atomic deposition technology as the first insulator layer; A SiO2 layer is fabricated on the surface of the first insulator layer using atomic deposition technology to serve as the second insulator layer; Repeat the above production process alternately for 4 to 6 cycles.

[0013] Optionally, the fabrication of the Al2O3 layer using atomic deposition technology includes: The light-emitting diode structure under fabrication is placed into the chamber of the atomic deposition equipment; The temperature in the chamber of the atomic deposition apparatus is controlled at 180~220℃, and H2O precursor is introduced and adsorbed on the surface of the epitaxial structure. The chamber of the atomic deposition apparatus was flushed with N2. TMA is introduced to react with the H2O precursor to form the Al2O3 layer.

[0014] Optionally, the fabrication of the SiO2 layer using atomic deposition technology includes: The light-emitting diode structure under fabrication is placed in a chamber using an atomic deposition apparatus; The temperature in the chamber of the atomic deposition apparatus is controlled to be 210~250°C, and an O3 source precursor is introduced and adsorbed onto the surface of the first insulator layer. Diisopropylammonium silane is introduced to react with the O3 source precursor to form the SiO2 layer.

[0015] The beneficial effects of the technical solutions provided in this disclosure are: In the light-emitting diodes provided by related technologies, the insulating layer usually adopts a single film layer structure. However, the single film layer structure has poor density and is prone to breakage, which makes the light-emitting diode prone to leakage and results in a low yield.

[0016] In this embodiment, a first insulating layer covers the surface of the epitaxial structure. The first insulating layer is constructed by stacking alternating layers of a first insulator layer and a second insulator layer, including at least one period. This stacked multilayer insulator layer replaces the original single film layer, providing more effective coverage and protection for the epitaxial structure. This improves the density of the first insulating layer, prevents leakage current in the LED, and increases the yield of the LED. The layer closest to the epitaxial structure is the first insulator layer, which is an Al2O3 layer. The Al2O3 layer has good coverage properties, which can form a better coverage effect on the epitaxial structure. The Al2O3 layer also has good adhesion properties, which can improve the adhesion between the first insulating layer and the epitaxial structure and prevent the first insulating layer from falling off. The second insulator layer is a SiO2 layer, which has good insulation properties and can prevent leakage current in the LED. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the structure of a light-emitting diode provided in an embodiment of the present disclosure; Figure 2 This is a schematic diagram of the structure of a first insulating layer provided in an embodiment of the present disclosure; Figure 3 This is a schematic diagram of the structure of a second insulating layer provided in an embodiment of the present disclosure; Figure 4 This is a schematic diagram of the structure of a dielectric film layer provided in an embodiment of the present disclosure; Figure 5 This is a flowchart of a method for fabricating a light-emitting diode (LED) according to an embodiment of the present disclosure. Figure 6 A flowchart illustrating another method for fabricating a light-emitting diode (LED) according to an embodiment of this disclosure.

[0019] The attached figures are labeled as follows: 10: Epitaxial structure; 20: First insulating layer; 30: Electrode structure; 40: Second insulating layer; 50: Pad structure; 21: First insulator layer; 22: Second insulator layer; 31: First electrode; 32: Second electrode; 51: First pad; 52: Second pad; 100: Substrate; 101: First semiconductor layer; 102: Active layer; 103: Second semiconductor layer; 104: Transparent conductive layer; 105: Dielectric film layer; 106: Silver mirror layer; 1051: First dielectric sub-film layer; 1052: Second dielectric sub-film layer; 1000: Step structure; 1001: Step top surface; 1002: Step bottom surface; 1003: Isolation groove; 1004: Through hole. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0021] Figure 1 This is a schematic diagram of the structure of a light-emitting diode provided in an embodiment of this disclosure. See also... Figure 1 The light-emitting diode includes an epitaxial structure 10, a first insulating layer 20, and an electrode structure 30. The first insulating layer 20 covers the surface of the epitaxial structure 10, and the electrode structure 30 passes through the first insulating layer 20 and is electrically connected to the epitaxial structure 10.

[0022] Figure 2 This is a schematic diagram of the structure of a first insulating layer provided in an embodiment of this disclosure. See also... Figure 2 The first insulating layer 20 includes at least one periodically stacked first insulator layer 21 and second insulator layer 22, and the layer closest to the epitaxial structure 10 is the first insulator layer 21, the first insulator layer 21 is an Al2O3 layer, and the second insulator layer 22 is a SiO2 layer.

[0023] In the light-emitting diodes provided by related technologies, the insulating layer usually adopts a single film layer structure. However, the single film layer structure has poor density and is prone to breakage, which makes the light-emitting diode prone to leakage and results in a low yield.

[0024] In this embodiment, a first insulating layer covers the surface of the epitaxial structure. The first insulating layer is constructed by stacking alternating layers of a first insulator layer and a second insulator layer, including at least one period. This stacked multilayer insulator layer replaces the original single film layer, providing more effective coverage and protection for the epitaxial structure. This improves the density of the first insulating layer, prevents leakage current in the LED, and increases the yield of the LED. The layer closest to the epitaxial structure is the first insulator layer, which is an Al2O3 layer. The Al2O3 layer has good coverage properties, which can form a better coverage effect on the epitaxial structure. The Al2O3 layer also has good adhesion properties, which can improve the adhesion between the first insulating layer and the epitaxial structure and prevent the first insulating layer from falling off. The second insulator layer is a SiO2 layer, which has good insulation properties and can prevent leakage current in the LED.

[0025] In this embodiment of the present disclosure, the first insulating layer 20 includes a first insulator layer 21 and a second insulator layer 22 that are alternately stacked for 4 to 6 cycles.

[0026] The thickness of the first insulator layer 21 is 500~1200 angstroms, and the thickness of the second insulator layer 22 is 1500~2500 angstroms.

[0027] In this implementation, the first insulating layer includes 4 to 6 alternating layers of first and second insulators. The minimum number of cycles is 4, and the alternating arrangement of the first and second insulators with 4 cycles can significantly improve the overall insulation performance of the film. The maximum number of cycles is 6, and the alternating arrangement of the first and second insulators with 6 cycles results in a shorter deposition time for the first insulating layer and a lower production cost for the light-emitting diode.

[0028] The thickness of the first insulator layer is 500~1200 angstroms. This thickness ensures sufficient density, improving adhesion between the first insulator layer and the epitaxial structure, preventing leakage from the LED. The thickness of the first insulator layer also meets the lightweight requirements of the LED, reducing manufacturing costs. The thickness of the second insulator layer is 1500~2500 angstroms. This thickness ensures good insulation, preventing leakage from the LED. Again, this thickness meets the lightweight requirements of the LED, reducing manufacturing costs.

[0029] For example, the first insulating layer 20 includes four to five alternating layers of first insulator layer 21 and second insulator layer 22.

[0030] The thickness of the first insulator layer 21 is 500~1000 angstroms, and the thickness of the second insulator layer 22 is 1500~2000 angstroms.

[0031] In other embodiments, the first insulating layer 20 may include more or fewer cycles, such as 2 to 3, or 6 to 10, but 4 to 6 cycles provide the best overall performance.

[0032] In other embodiments, the thickness of the first insulator layer 21 may be less than 500 or greater than 1200 angstroms, but 500 to 1200 angstroms provides the best overall performance. The thickness of the second insulator layer 22 may be less than 1500 or greater than 2500 angstroms, but 1500 to 2500 angstroms provides the best overall performance.

[0033] In this embodiment of the disclosure, the thickness of the first insulator layer 21 closest to the epitaxial structure 10 is greater than the thickness of the other first insulator layers 21.

[0034] The thickness of the second insulator layer 22 closest to the outer epitaxial structure 10 is greater than the thickness of the other second insulator layers 22.

[0035] In this implementation, since the portion closest to the epitaxial structure is prone to insulation layer detachment, which is the source of leakage in the LED, the thickness of the first insulator layer closest to the epitaxial structure is greater than the thickness of the other first insulator layers, and the thickness of the second insulator layer closest to the epitaxial structure is greater than the thickness of the other second insulator layers. This makes the portion of the first insulator layer closest to the epitaxial structure more compact, has stronger adhesion to the epitaxial structure, and stronger insulation capability, thereby preventing LED leakage.

[0036] In this implementation, the thickness of the other first insulator layers 21 can be equal, and the thickness of the other second insulator layers 22 can be equal.

[0037] In other embodiments, the thickness of all first insulator layers 21 may be the same, and the thickness of all second insulator layers 22 may be the same. For example, the thicknesses of each first insulator layer 21 and second insulator layer 22 in the first insulating layer 20 may be 500 angstroms, 1500 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms and 1500 angstroms respectively.

[0038] In other embodiments, the thickness of the plurality of first insulator layers 21 may gradually decrease in the direction away from the epitaxial structure 10, and the thickness of the plurality of second insulator layers 22 may gradually decrease in the direction away from the epitaxial structure 10. For example, the thicknesses of each of the first insulator layers 21 and the second insulator layers 22 in the first insulating layer 20 are 1000 angstroms, 2000 angstroms, 900 angstroms, 1900 angstroms, 800 angstroms, 1800 angstroms, 700 angstroms and 1700 angstroms, respectively.

[0039] In this embodiment of the disclosure, the first insulating layer 20 includes four alternating layers of a first insulator layer 21 and a second insulator layer 22.

[0040] That is, the first insulating layer 20 includes: an Al2O3 layer, a SiO2 layer, an Al2O3 layer, a SiO2 layer, an Al2O3 layer, a SiO2 layer, an Al2O3 layer, and a SiO2 layer.

[0041] The thicknesses of each first insulator layer 21 and second insulator layer 22 in the first insulating layer 20 are 1000 angstroms, 2000 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms and 1500 angstroms respectively.

[0042] In this implementation, the stacking period of the first and second insulator layers is 4, which significantly improves the overall insulation performance of the film. Furthermore, the deposition time of the first insulating layer is shorter, resulting in lower production costs for the LED. The thicknesses of the first and second insulator layers in the first insulating layer are 1000 Å, 2000 Å, 500 Å, 1500 Å, 500 Å, 1500 Å, 500 Å, and 1500 Å, respectively. This allows the thickness of the first insulator layer closest to the epitaxial structure to be greater than the thicknesses of the other first insulator layers, and the thickness of the second insulator layer closest to the epitaxial structure to be greater than the thicknesses of the other second insulator layers. This makes the portion of the first insulating layer closest to the epitaxial structure more compact, resulting in stronger adhesion and insulation, thus preventing LED leakage. The aforementioned thicknesses also meet the lightweight requirements of LEDs, reducing their manufacturing costs.

[0043] In another example, the thicknesses of the first insulator layer 21 and the second insulator layer 22 in the first insulating layer 20 are 1200 angstroms, 2400 angstroms, 600 angstroms, 1800 angstroms, 600 angstroms, 1800 angstroms, 600 angstroms and 1800 angstroms respectively.

[0044] In this embodiment of the disclosure, the light-emitting diode further includes a second insulating layer 40 and a pad structure 50.

[0045] The second insulating layer 40 covers the first insulating layer 20 and the electrode structure 30.

[0046] The second insulating layer 40 includes at least one periodically alternating stacked first insulator layer 21 and second insulator layer 22, with the layer closest to the first insulating layer 20 being the first insulator layer 21.

[0047] The pad structure 50 passes through the second insulating layer 40 and is electrically connected to the electrode structure 30.

[0048] In this implementation, the second insulating layer covers the first insulating layer and the electrode structure, preventing leakage current in the electrode structure. The second insulating layer includes at least one periodically alternating stacked first and second insulator layers. By using a stacked multilayer insulator layer instead of the original single film layer, the electrode structure is more effectively encapsulated and protected, improving the density of the second insulating layer, preventing leakage current in the light-emitting diode, and improving the yield of the light-emitting diode. The layer closest to the first insulating layer is the first insulator layer, which is an Al2O3 layer. The Al2O3 layer has good encapsulation properties, which can form a better encapsulation effect on the first insulating layer. In addition, the Al2O3 layer has better adhesion, which can improve the adhesion between the second insulating layer and the first insulating layer and prevent the second insulating layer from falling off.

[0049] Figure 3 This is a schematic diagram of the structure of a second insulating layer provided in an embodiment of this disclosure. See also... Figure 3 The second insulating layer 40 includes a first insulating layer 21 and a second insulating layer 22 that are alternately stacked for 4 to 6 cycles.

[0050] The thickness of the first insulator layer 21 is 500~1200 angstroms, and the thickness of the second insulator layer 22 is 1500~2500 angstroms.

[0051] In this implementation, the second insulating layer comprises 4 to 6 alternating layers of a first insulator layer and a second insulator layer. The minimum number of cycles is 4, and the alternating arrangement of the first and second insulator layers with 4 cycles significantly improves the overall insulation performance of the film layer. The maximum number of cycles is 6, and the alternating arrangement of the first and second insulator layers with 6 cycles results in a shorter deposition time for the second insulating layer and lower production costs for the LED. The thickness of the first insulator layer is 500 to 1200 angstroms. The thickness of the first insulator layer is not too thin, ensuring sufficient density for the second insulating layer, improving the adhesion between the second and first insulating layers, and preventing leakage current from the LED. The thickness of the first insulator layer is also not too thick, meeting the lightweight requirements of the LED and reducing its manufacturing cost. The thickness of the second insulator layer is 1500 to 2500 angstroms. The thickness of the second insulator layer is not too thin, ensuring good insulation performance for the second insulator layer and preventing leakage current from the LED. The thickness of the second insulator layer is also not too thick, meeting the lightweight requirements of the LED and reducing its manufacturing cost.

[0052] For example, the first insulating layer 20 includes four to five alternating layers of first insulator layer 21 and second insulator layer 22.

[0053] The thickness of the first insulator layer 21 is 500~1000 angstroms, and the thickness of the second insulator layer 22 is 1500~2000 angstroms.

[0054] In other embodiments, the second insulating layer 40 may include more or fewer cycles, such as 2 to 3 or 6 to 10, but 4 to 6 cycles provide the best overall performance.

[0055] In other embodiments, the thickness of the first insulator layer 21 may be less than 500 or greater than 1200 angstroms, but 500 to 1200 angstroms provides the best overall performance. The thickness of the second insulator layer 22 may be less than 1500 or greater than 2500 angstroms, but 1500 to 2500 angstroms provides the best overall performance.

[0056] In this embodiment of the disclosure, the thickness of the first insulator layer 21 closest to the first insulating layer 20 is greater than the thickness of the other first insulator layers 21.

[0057] The thickness of the second insulator layer 22 closest to the first insulating layer 20 is greater than the thickness of the other second insulator layers 22.

[0058] In this implementation, since the portion closest to the first insulating layer is prone to insulation layer detachment, which is the source of leakage in the LED, the thickness of the first insulator layer closest to the first insulating layer is greater than the thickness of the other first insulator layers, and the thickness of the second insulator layer closest to the first insulating layer is greater than the thickness of the other second insulator layers. This makes the portion of the first insulating layer closest to the first insulating layer more compact, has stronger adhesion to the first insulating layer, and stronger insulation capability, thereby preventing LED leakage.

[0059] In this implementation, the thickness of the other first insulator layers 21 can be equal, and the thickness of the other second insulator layers 22 can be equal.

[0060] In other embodiments, the thickness of all first insulator layers 21 may be the same, and the thickness of all second insulator layers 22 may be the same. For example, the thicknesses of each first insulator layer 21 and second insulator layer 22 in the second insulating layer 40 may be 500 angstroms, 1500 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms and 1500 angstroms respectively.

[0061] In other embodiments, the thickness of the plurality of first insulator layers 21 may gradually decrease in the direction away from the first insulating layer 20, and the thickness of the plurality of second insulator layers 22 may also gradually decrease in the direction away from the first insulating layer 20. For example, the thicknesses of each of the first insulator layers 21 and the second insulator layers 22 in the second insulating layer 40 are 1000 angstroms, 2000 angstroms, 900 angstroms, 1900 angstroms, 800 angstroms, 1800 angstroms, 700 angstroms and 1700 angstroms, respectively.

[0062] In this embodiment of the disclosure, the second insulating layer 40 includes four alternating layers of a first insulator layer 21 and a second insulator layer 22.

[0063] That is, the second insulating layer 40 includes: an Al2O3 layer, a SiO2 layer, an Al2O3 layer, a SiO2 layer, an Al2O3 layer, a SiO2 layer, an Al2O3 layer, and a SiO2 layer.

[0064] The thicknesses of the first insulator layer 21 and the second insulator layer 22 in the second insulating layer 40 are 1000 angstroms, 2000 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms and 1500 angstroms respectively.

[0065] In this implementation, the stacking period of the first and second insulator layers is 4, which significantly improves the overall insulation performance of the film. Furthermore, the deposition time of the first insulating layer is shorter, resulting in lower production costs for the LED. The thicknesses of the first and second insulator layers in the second insulating layer are 1000 Å, 2000 Å, 500 Å, 1500 Å, 500 Å, 1500 Å, 500 Å, and 1500 Å, respectively. This allows the thickness of the first insulator layer closest to the first insulating layer to be greater than the thicknesses of the other first insulator layers, and the thickness of the second insulator layer closest to the first insulating layer to be greater than the thicknesses of the other second insulator layers. This makes the portion of the second insulating layer closest to the first insulating layer more compact, has stronger adhesion to the first insulating layer, and provides stronger insulation, thereby preventing LED leakage. The aforementioned thicknesses also meet the lightweight requirements of LEDs, reducing their manufacturing costs.

[0066] In another example, the thicknesses of the first insulator layer 21 and the second insulator layer 22 in the second insulating layer 40 are 1200 angstroms, 2400 angstroms, 600 angstroms, 1800 angstroms, 600 angstroms, 1800 angstroms, 600 angstroms and 1800 angstroms respectively.

[0067] In one example, the first insulating layer 20 and the second insulating layer 40 have exactly the same structure.

[0068] In another example, the first insulating layer 20 and the second insulating layer 40 have different structures. For example, the number of periods in the second insulating layer 40 is greater than that in the first insulating layer 20, or the thickness of the two sub-layers in the second insulating layer 40 is greater than that in the first insulating layer 20.

[0069] In this embodiment of the disclosure, the epitaxial structure 10 includes a first semiconductor layer 101, an active layer 102, and a second semiconductor layer 103 stacked sequentially.

[0070] In this embodiment of the disclosure, the first semiconductor layer 101 can be an N-type semiconductor layer, and the second semiconductor layer 103 can be a P-type semiconductor layer.

[0071] For example, the first semiconductor layer 101 can be an N-type GaN layer, and the second semiconductor layer 103 can be a P-type GaN layer.

[0072] In other embodiments, the first semiconductor layer 101 may be a P-type semiconductor layer, and the second semiconductor layer 103 may be an N-type semiconductor layer.

[0073] In this embodiment of the disclosure, the active layer 102 can be a multi-quantum well layer, such as an InGaN / GaN multi-quantum well structure.

[0074] In this embodiment of the disclosure, the light-emitting diode further includes a substrate 100.

[0075] The first semiconductor layer 101, the active layer 102, and the second semiconductor layer 103 are sequentially stacked on the substrate 100.

[0076] The first semiconductor layer 101, the active layer 102, and the second semiconductor layer 103 have a step structure 1000 extending to the first semiconductor layer 101 and an isolation trench 1003 extending to the substrate 100. The top surface 1001 of the step structure 1000 is located on the surface of the second semiconductor layer 103, and the bottom surface 1002 of the step structure 1000 is located on the first semiconductor layer 101.

[0077] In this embodiment of the disclosure, the substrate 100 can be any one of a sapphire patterned substrate, a Si substrate, or a SiC substrate, and the material of the substrate 100 is not limited in this embodiment of the disclosure.

[0078] For example, substrate 100 is a patterned sapphire substrate.

[0079] In this embodiment of the disclosure, the light-emitting diode further includes a transparent conductive layer 104.

[0080] A transparent conductive layer 104 covers the top surface 1001 of the step.

[0081] In this embodiment of the disclosure, the transparent conductive layer 104 can be an indium tin oxide (ITO) layer. ITO has excellent transparency and conductivity, allowing light to pass through while also conducting current to form an electrical connection.

[0082] In this embodiment of the disclosure, the light-emitting diode further includes a dielectric film layer 105.

[0083] The dielectric film layer 105 covers the substrate 100, the epitaxial structure 10, and the transparent conductive layer 104. The dielectric film layer 105 has a plurality of vias 1004, including transparent conductive layer vias and epitaxial vias. The transparent conductive layer vias are correspondingly disposed with the transparent conductive layer. The epitaxial vias are located on the bottom surface of the step of the epitaxial structure, and the bottom of the transparent conductive layer vias is located on the surface of the transparent conductive layer 104.

[0084] In this embodiment of the disclosure, the projection of the through hole 1004 onto the surface of the epitaxial structure 10 is circular.

[0085] Figure 4 This is a schematic diagram of the structure of a dielectric film layer provided in an embodiment of this disclosure. See also... Figure 4 The dielectric film layer 105 may include a first dielectric sub-film layer 1051 and a second dielectric sub-film layer 1052.

[0086] In this embodiment of the disclosure, the first dielectric sub-film layer 1051 is a charge blocking layer (CBL) and the second dielectric sub-film layer 1052 is an omni-directional reflector (ODR) layer.

[0087] For example, the first dielectric sub-film layer 1051 can be a SiO2 layer, and the second dielectric sub-film layer 1052 can be a composite layer formed by alternating stacking of Ti3O5 layers and Ag layers.

[0088] In this embodiment of the disclosure, the light-emitting diode further includes a silver mirror layer 106, which covers the dielectric film layer 105 and is electrically connected to the transparent conductive layer 104 through the via 1004.

[0089] In this embodiment, the silver mirror layer 106 can be a combination of one or more metal or alloy layers such as Ag, Ni, Ti, TiW, Al, AlCu, Ti, Ni, Pt, and Au. Ag is the main structure, serving to reflect light and spread current, while Ni and TiW prevent the migration and diffusion of Ag.

[0090] For example, the silver mirror layer 106 is a stack of Ag, Ni, Ti and TiW.

[0091] In this embodiment of the disclosure, the electrode structure 30 includes a first electrode 31 and a second electrode 32.

[0092] The first electrode 31 passes through the first insulating layer 20 at the silver mirror layer 106 and is electrically connected to the silver mirror layer 106. The second electrode 32 passes through the first insulating layer 20 at the bottom of the step and is electrically connected to the epitaxial structure 10.

[0093] In this embodiment of the disclosure, the first electrode 31 and the second electrode 32 can be a combination of one or more metal or alloy layers such as Cr, Al, AlCu, Ti, Ni, Pt and Au.

[0094] For example, the first electrode 31 and the second electrode 32 are Cr, Al, AlCu, Ti, Ni, Pt and Au stacks.

[0095] In this embodiment of the disclosure, the pad structure 50 includes a first pad 51 and a second pad 52.

[0096] The first pad 51 passes through the second insulating layer 40 at the first electrode 31 and is electrically connected to the first electrode 31. The second pad 52 passes through the second insulating layer 40 at the second electrode 32 and is electrically connected to the second electrode 32.

[0097] In this embodiment of the disclosure, the first pad 51 and the second pad 52 can be a combination of one or more metal or alloy layers such as Cr, Al, AlCu, Ti, Ni, Pt, Au and AuSn.

[0098] For example, the first pad 51 and the second pad 52 are Cr, Al, AlCu, Ti, Ni, Pt, Au and AuSn stacks.

[0099] It is worth noting that, in the embodiments of this disclosure, the structure can be selectively added or reduced based on the structure of the light-emitting diode described above, and this disclosure does not limit this.

[0100] Figure 5 This is a flowchart illustrating a method for fabricating a light-emitting diode (LED) according to an embodiment of this disclosure. See also... Figure 5 The method includes the following steps: S11. Fabricate the extensional structure.

[0101] S12, Make the first insulating layer.

[0102] The first insulating layer covers the surface of the epitaxial structure. The first insulating layer includes at least one periodically stacked first insulator layer and second insulator layer, and the layer closest to the epitaxial structure is the first insulator layer. The first insulator layer is an Al2O3 layer, and the second insulator layer is a SiO2 layer.

[0103] S13. Fabricate an electrode structure, wherein the electrode structure passes through the first insulating layer and is electrically connected to the epitaxial structure.

[0104] In the light-emitting diodes provided by related technologies, the insulating layer usually adopts a single film layer structure. However, the single film layer structure has poor density and is prone to breakage, which makes the light-emitting diode prone to leakage and results in a low yield.

[0105] In this embodiment, a first insulating layer covers the surface of the epitaxial structure. The first insulating layer is constructed by stacking alternating layers of a first insulator layer and a second insulator layer, including at least one period. This stacked multilayer insulator layer replaces the original single film layer, providing more effective coverage and protection for the epitaxial structure. This improves the density of the first insulating layer, prevents leakage current in the LED, and increases the yield of the LED. The layer closest to the epitaxial structure is the first insulator layer, which is an Al2O3 layer. The Al2O3 layer has good coverage properties, which can form a better coverage effect on the epitaxial structure. The Al2O3 layer also has good adhesion properties, which can improve the adhesion between the first insulating layer and the epitaxial structure and prevent the first insulating layer from falling off. The second insulator layer is a SiO2 layer, which has good insulation properties and can prevent leakage current in the LED.

[0106] Figure 6 A flowchart illustrating another method for fabricating a light-emitting diode (LED) according to an embodiment of this disclosure. See also... Figure 6 The method includes the following steps: S21. A first semiconductor layer, an active layer, and a second semiconductor layer are sequentially formed on a substrate, and the second semiconductor layer, the active layer, and the first semiconductor layer constitute an epitaxial structure.

[0107] The substrate can be any one of the following: a patterned sapphire substrate, a Si substrate, or a SiC substrate.

[0108] In one example, step S21 includes: The first step is to fabricate the first semiconductor layer on the substrate.

[0109] In this embodiment of the disclosure, the first semiconductor layer is an N-type GaN layer.

[0110] The second step is to fabricate an active layer on the first semiconductor layer.

[0111] In this embodiment of the disclosure, the active layer is a multi-quantum well layer, such as an InGaN / GaN multi-quantum well structure.

[0112] The third step is to fabricate a second semiconductor layer on the active layer.

[0113] In this embodiment of the disclosure, the second semiconductor layer is a P-type GaN layer.

[0114] In this embodiment of the present disclosure, a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially stacked on a substrate.

[0115] S22. The extensional structure is graphically processed to form a stepped structure and an isolation groove. The stepped structure includes the top surface of the step and the bottom surface of the step.

[0116] In this embodiment of the disclosure, the epitaxial structure is patterned by inductively coupled plasma etching (ICP).

[0117] In this embodiment of the disclosure, the first semiconductor layer, the active layer, and the second semiconductor layer have a stepped structure extending to the first semiconductor layer, that is, the bottom surface of the step is located in the first semiconductor layer, and the isolation trench extends to the substrate.

[0118] S23. Fabricate a transparent conductive layer.

[0119] In one example, step S23 includes: The first step is to fabricate a transparent conductive film on the surface of the epitaxial structure.

[0120] In this embodiment, the transparent conductive film can be an ITO layer. ITO has excellent transparency and conductivity, allowing light to pass through while also conducting current to form an electrical connection.

[0121] The second step is to pattern the transparent conductive film to obtain a transparent conductive layer.

[0122] S24. A dielectric film is fabricated on the transparent conductive layer, the dielectric film covering the epitaxial structure, the transparent conductive layer and the substrate.

[0123] In this embodiment of the disclosure, the dielectric film layer may include a first dielectric sub-film layer and a second dielectric sub-film layer.

[0124] In this embodiment of the disclosure, the first dielectric sub-film layer is a CBL layer, and the second dielectric sub-film layer is an ODR layer.

[0125] For example, the first dielectric sub-film layer can be a SiO2 layer, and the second dielectric sub-film layer can be a composite layer formed by alternating stacks of Ti3O5 layers and Ag layers.

[0126] S25. Pattern the dielectric film to form through holes.

[0127] In this embodiment of the disclosure, through-holes in the dielectric film layer are formed by ICP etching, and the through-holes are formed in one step.

[0128] In this embodiment of the disclosure, the via includes a transparent conductive layer via and an epitaxial via.

[0129] The transparent conductive layer vias are provided corresponding to the transparent conductive layer, and the epitaxial vias are located on the bottom surface of the step of the epitaxial structure.

[0130] In this embodiment of the disclosure, the transparent conductive layer vias may include multiple vias, which are spaced apart.

[0131] S26. Fabricate a silver mirror layer, which covers the dielectric film layer and is electrically connected to the transparent conductive layer through the via.

[0132] In this embodiment, the silver mirror layer can be a combination of one or more metal or alloy layers such as Ag, Ni, Ti, TiW, Al, AlCu, Ti, Ni, Pt, and Au. Ag is the main structure, serving to reflect light and spread current, while Ni and TiW prevent the migration and diffusion of Ag.

[0133] For example, the silver mirror layer is a stack of Ag, Ni, Ti and TiW.

[0134] S27. Make the first insulating layer.

[0135] In one example, step S27 includes: The first step is to fabricate the first insulator layer, which is covered with a silver mirror layer and a dielectric film layer.

[0136] In this embodiment of the disclosure, an Al2O3 layer is fabricated on the surface of the epitaxial structure using atomic deposition technology as the first insulator layer.

[0137] In this implementation, the Al2O3 layer prepared by atomic layer deposition has high density. Considering its excellent three-dimensional conformability (not only in thickness, but also in all directions of the entire three-dimensional space, it can maintain the same morphology as the underlying layer), when covering the steps of the epitaxial structure, it can smoothly cover the entire area of ​​the epitaxial structure. This can significantly improve the high temperature and high humidity resistance of the light-emitting diode, improve the ability to prevent moisture intrusion, and greatly improve the reliability of the light-emitting diode.

[0138] In this embodiment, an Al2O3 layer is fabricated using atomic deposition technology, comprising: placing a light-emitting diode structure to be prepared into the chamber of an atomic deposition apparatus; controlling the temperature in the chamber of the atomic deposition apparatus to 180-220°C; introducing H2O precursor to adsorb onto the surface of the epitaxial structure; rinsing the chamber of the atomic deposition apparatus with N2; and introducing trimethylaluminum (TMA) to react with the H2O precursor to form an Al2O3 layer.

[0139] In this implementation, controlling the temperature in the chamber of the atomic deposition equipment to 180~220℃ can improve the reaction rate, form a dense Al2O3 layer, and improve the ability of the light-emitting diode to prevent moisture intrusion. Using N2 to rinse the chamber of the atomic deposition equipment can effectively remove impurity gases and by-products, reduce defects and impurity content in the first insulating layer, and form an Al2O3 layer through the reaction of TMA with H2O precursor.

[0140] The second step is to fabricate a SiO2 layer on the surface of the first insulator layer using atomic deposition technology as the second insulator layer.

[0141] In this implementation, the second insulator layer is fabricated using atomic deposition technology, resulting in better density and improved insulation performance.

[0142] In this embodiment, the SiO2 layer is fabricated using atomic deposition technology, comprising: placing the light-emitting diode structure under preparation into a chamber of an atomic deposition apparatus; controlling the temperature in the chamber of the atomic deposition apparatus to 210~250°C; introducing an O3 source precursor to adsorb onto the surface of a first insulator layer; and introducing diisopropylammonium silane to react with the O3 source precursor to form the SiO2 layer.

[0143] In this implementation, the reaction rate can be increased at a temperature of 180~220℃, forming a dense SiO2 layer and improving the insulation of the first insulating layer; introducing diisopropylammonium silane to react with the O3 source precursor can form a SiO2 layer.

[0144] The third step is to repeat the above production process alternately for 4 to 6 cycles.

[0145] In this embodiment of the disclosure, the first insulating layer includes four to six alternating layers of first and second insulators.

[0146] The thickness of the first insulator layer is 500~1200 angstroms, and the thickness of the second insulator layer is 1500~2500 angstroms.

[0147] In this implementation, the first insulating layer comprises 4 to 6 alternating layers of a first insulator layer and a second insulator layer. The minimum number of cycles is 4, and the alternating arrangement of the first and second insulator layers with 4 cycles significantly improves the overall insulation performance of the film layer. The maximum number of cycles is 6, and the alternating arrangement of the first and second insulator layers with 6 cycles results in a shorter deposition time for the first insulating layer and lower production costs for the LED. The thickness of the first insulator layer is 500 to 1200 angstroms. The thickness of the first insulator layer is not too thin, ensuring sufficient density and improving the adhesion between the first insulating layer and the epitaxial structure, preventing leakage current from the LED. The thickness of the first insulator layer is also not too thick, meeting the lightweight requirements of the LED and reducing its manufacturing cost. The thickness of the second insulator layer is 1500 to 2500 angstroms. The thickness of the second insulator layer is not too thin, ensuring good insulation performance and preventing leakage current from the LED. The thickness of the second insulator layer is also not too thick, meeting the lightweight requirements of the LED and reducing its manufacturing cost.

[0148] For example, the first insulating layer includes four to five alternating layers of first and second insulators.

[0149] The thickness of the first insulator layer is 500~1000 angstroms, and the thickness of the second insulator layer is 1500~2000 angstroms.

[0150] In other embodiments, the first insulating layer may include more or fewer cycles, such as 2 to 3, or 6 to 10, but 4 to 6 cycles provide the best overall performance.

[0151] In other embodiments, the thickness of the first insulator layer may be less than 500 or greater than 1200 angstroms, but 500 to 1200 angstroms provides the best overall performance. The thickness of the second insulator layer may be less than 1500 or greater than 2500 angstroms, but 1500 to 2500 angstroms provides the best overall performance.

[0152] In this embodiment of the disclosure, the thickness of the first insulator layer closest to the epitaxial structure is greater than the thickness of the other first insulator layers.

[0153] The thickness of the second insulator layer closest to the epitaxial structure is greater than the thickness of the other second insulator layers.

[0154] In this implementation, since the portion closest to the epitaxial structure is prone to insulation layer detachment, which is the source of leakage in the LED, the thickness of the first insulator layer closest to the epitaxial structure is greater than the thickness of the other first insulator layers, and the thickness of the second insulator layer closest to the epitaxial structure is greater than the thickness of the other second insulator layers. This makes the portion of the first insulator layer closest to the epitaxial structure more compact, has stronger adhesion to the epitaxial structure, and stronger insulation capability, thereby preventing LED leakage.

[0155] In this implementation, the thickness of the other first insulator layers can be equal, and the thickness of the other second insulator layers can be equal.

[0156] In other embodiments, all first insulator layers may have the same thickness, and all second insulator layers may have the same thickness. For example, the thicknesses of each first insulator layer and each second insulator layer in the first insulation layer may be 500 angstroms, 1500 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms, and 1500 angstroms, respectively.

[0157] In other embodiments, the thickness of the plurality of first insulator layers may gradually decrease in a direction away from the epitaxial structure, and the thickness of the plurality of second insulator layers may gradually decrease in a direction away from the epitaxial structure. For example, the thicknesses of each of the first and second insulator layers in the first insulating layer may be 1000 angstroms, 2000 angstroms, 900 angstroms, 1900 angstroms, 800 angstroms, 1800 angstroms, 700 angstroms, and 1700 angstroms, respectively.

[0158] In this embodiment of the disclosure, the first insulating layer includes four alternating layers of first and second insulators stacked in four cycles.

[0159] That is, the first insulating layer includes: Al2O3 layer, SiO2 layer, Al2O3 layer, SiO2 layer, Al2O3 layer, SiO2 layer, Al2O3 layer, SiO2 layer, Al2O3 layer, SiO2 layer.

[0160] The thicknesses of each first insulator layer and second insulator layer in the first insulation layer are 1000 angstroms, 2000 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms and 1500 angstroms respectively.

[0161] In this implementation, the stacking period of the first and second insulator layers is 4, which significantly improves the overall insulation performance of the film. Furthermore, the deposition time of the first insulating layer is shorter, resulting in lower production costs for the LED. The thicknesses of the first and second insulator layers in the first insulating layer are 1000 Å, 2000 Å, 500 Å, 1500 Å, 500 Å, 1500 Å, 500 Å, and 1500 Å, respectively. This allows the thickness of the first insulator layer closest to the epitaxial structure to be greater than the thicknesses of the other first insulator layers, and the thickness of the second insulator layer closest to the epitaxial structure to be greater than the thicknesses of the other second insulator layers. This makes the portion of the first insulating layer closest to the epitaxial structure more compact, resulting in stronger adhesion and insulation, thus preventing LED leakage. The aforementioned thicknesses also meet the lightweight requirements of LEDs, reducing their manufacturing costs.

[0162] In another example, the thicknesses of the first insulator layers and the second insulator layers in the first insulating layer are 1200 angstroms, 2400 angstroms, 600 angstroms, 1800 angstroms, 600 angstroms, 1800 angstroms, 600 angstroms and 1800 angstroms respectively.

[0163] The fourth step is to pattern the first insulating layer and create through holes in the first insulating layer at the stepped structure and the silver mirror layer.

[0164] In this embodiment of the present disclosure, a through-hole in the first insulating layer is formed by a dry etching method.

[0165] S28. Fabricate a first electrode and a second electrode. The first electrode is connected to the silver mirror layer through a through-hole in the first insulating layer at the silver mirror layer, and the second electrode is connected to the epitaxial structure through a through-hole in the first insulating layer at the stepped structure.

[0166] In the embodiments of this disclosure, the first electrode and the second electrode can be a combination of one or more metal or alloy layers such as Cr, Al, AlCu, Ti, Ni, Pt and Au.

[0167] For example, the first electrode and the second electrode are a stack of Cr, Al, AlCu, Ti, Ni, Pt and Au.

[0168] S29. Make the second insulating layer.

[0169] In one example, step S29 includes: The first step is to fabricate the first insulator layer, which covers the first insulation layer and the electrode structure.

[0170] In this embodiment of the disclosure, an Al2O3 layer is fabricated on the surface of the first insulating layer using atomic deposition technology as the first insulator layer.

[0171] In this implementation, the Al2O3 layer prepared by atomic layer deposition has high density. Considering its excellent three-dimensional conformability (not only in thickness, but also in all directions of the entire three-dimensional space, it can maintain the same morphology as the underlying layer), when covering the steps of the epitaxial structure, it can smoothly cover the entire area of ​​the epitaxial structure. This can significantly improve the high temperature and high humidity resistance of the light-emitting diode, improve the ability to prevent moisture intrusion, and greatly improve the reliability of the light-emitting diode.

[0172] In this embodiment, an Al2O3 layer is fabricated using atomic deposition technology, comprising: placing a light-emitting diode structure under preparation into the chamber of an atomic deposition apparatus; controlling the temperature in the chamber of the atomic deposition apparatus to 180-220°C; introducing an H2O precursor that adsorbs onto the surface of a first insulating layer; rinsing the chamber of the atomic deposition apparatus with N2; and introducing TMA to react with the H2O precursor to form an Al2O3 layer.

[0173] In this implementation, controlling the temperature in the chamber of the atomic deposition equipment to 180~220℃ can improve the reaction rate, form a dense Al2O3 layer, and improve the ability of the light-emitting diode to prevent moisture intrusion. Using N2 to rinse the chamber of the atomic deposition equipment can effectively remove impurity gases and by-products, reduce defects and impurity content in the second insulating layer, and form an Al2O3 layer through the reaction of TMA with H2O precursor.

[0174] The second step is to fabricate a SiO2 layer on the surface of the first insulator layer using atomic deposition technology as the second insulator layer.

[0175] In this embodiment, the SiO2 layer is fabricated using atomic deposition technology, comprising: placing the light-emitting diode structure under preparation into a chamber of an atomic deposition apparatus; controlling the temperature in the chamber of the atomic deposition apparatus to 210~250°C; introducing an O3 source precursor to adsorb onto the surface of a first insulator layer; and introducing diisopropylammonium silane to react with the O3 source precursor to form the SiO2 layer.

[0176] In this implementation, the reaction rate can be increased at a temperature of 180~220℃, forming a dense SiO2 layer and improving the insulation of the first insulating layer; introducing diisopropylammonium silane to react with the O3 source precursor can form a SiO2 layer.

[0177] The third step is to repeat the above production process alternately for 4 to 6 cycles.

[0178] In this embodiment of the present disclosure, the second insulating layer comprises four to six alternating layers of a first insulator layer and a second insulator layer.

[0179] The thickness of the first insulator layer is 500~1200 angstroms, and the thickness of the second insulator layer is 1500~2500 angstroms.

[0180] In this implementation, the second insulating layer comprises 4 to 6 alternating layers of a first insulator layer and a second insulator layer. The minimum number of cycles is 4, and the alternating arrangement of the first and second insulator layers with 4 cycles significantly improves the overall insulation performance of the film layer. The maximum number of cycles is 6, and the alternating arrangement of the first and second insulator layers with 6 cycles results in a shorter deposition time for the second insulating layer and lower production costs for the LED. The thickness of the first insulator layer is 500 to 1200 angstroms. The thickness of the first insulator layer is not too thin, ensuring sufficient density for the second insulating layer, improving the adhesion between the second and first insulating layers, and preventing leakage current from the LED. The thickness of the first insulator layer is also not too thick, meeting the lightweight requirements of the LED and reducing its manufacturing cost. The thickness of the second insulator layer is 1500 to 2500 angstroms. The thickness of the second insulator layer is not too thin, ensuring good insulation performance for the second insulator layer and preventing leakage current from the LED. The thickness of the second insulator layer is also not too thick, meeting the lightweight requirements of the LED and reducing its manufacturing cost.

[0181] For example, the first insulating layer includes four to five alternating layers of first and second insulators.

[0182] The thickness of the first insulator layer is 500~1000 angstroms, and the thickness of the second insulator layer is 1500~2000 angstroms.

[0183] In other embodiments, the second insulating layer may include more or fewer cycles, such as 2 to 3 or 6 to 10, but 4 to 6 cycles provide the best overall performance.

[0184] In other embodiments, the thickness of the first insulator layer may be less than 500 or greater than 1200 angstroms, but 500 to 1200 angstroms provides the best overall performance. The thickness of the second insulator layer may be less than 1500 or greater than 2500 angstroms, but 1500 to 2500 angstroms provides the best overall performance.

[0185] In this embodiment of the disclosure, the thickness of the first insulator layer closest to the first insulating layer is greater than the thickness of the other first insulator layers.

[0186] The thickness of the second insulator layer closest to the first insulation layer is greater than the thickness of the other second insulator layers.

[0187] In this implementation, since the portion closest to the first insulating layer is prone to insulation layer detachment, which is the source of leakage in the LED, the thickness of the first insulator layer closest to the first insulating layer is greater than the thickness of the other first insulator layers, and the thickness of the second insulator layer closest to the first insulating layer is greater than the thickness of the other second insulator layers. This makes the portion of the first insulating layer closest to the first insulating layer more compact, has stronger adhesion to the first insulating layer, and stronger insulation capability, thereby preventing LED leakage.

[0188] In this implementation, the thickness of the other first insulator layers 21 can be equal, and the thickness of the other second insulator layers 22 can be equal.

[0189] In other embodiments, all first insulator layers may have the same thickness, and all second insulator layers may have the same thickness. For example, the thicknesses of each first insulator layer and each second insulator layer in the second insulating layer may be 500 angstroms, 1500 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms, and 1500 angstroms, respectively.

[0190] In other embodiments, the thickness of the plurality of first insulator layers may gradually decrease in the direction away from the first insulator layer, and the thickness of the plurality of second insulator layers may gradually decrease in the direction away from the first insulator layer. For example, the thicknesses of each of the first and second insulator layers in the second insulator layer may be 1000 angstroms, 2000 angstroms, 900 angstroms, 1900 angstroms, 800 angstroms, 1800 angstroms, 700 angstroms, and 1700 angstroms, respectively.

[0191] In this embodiment of the disclosure, the second insulating layer comprises four alternating layers of a first insulator layer and a second insulator layer.

[0192] That is, the second insulating layer includes: Al2O3 layer, SiO2 layer, Al2O3 layer, SiO2 layer, Al2O3 layer, SiO2 layer, Al2O3 layer, SiO2 layer, Al2O3 layer, SiO2 layer.

[0193] The thicknesses of each of the first and second insulator layers in the second insulation layer are 1000 angstroms, 2000 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms and 1500 angstroms respectively.

[0194] In this implementation, the stacking period of the first and second insulator layers is 4, which significantly improves the overall insulation performance of the film. Furthermore, the deposition time of the first insulating layer is shorter, resulting in lower production costs for the LED. The thicknesses of the first and second insulator layers in the second insulating layer are 1000 Å, 2000 Å, 500 Å, 1500 Å, 500 Å, 1500 Å, 500 Å, and 1500 Å, respectively. This allows the thickness of the first insulator layer closest to the first insulating layer to be greater than the thicknesses of the other first insulator layers, and the thickness of the second insulator layer closest to the first insulating layer to be greater than the thicknesses of the other second insulator layers. This makes the portion of the second insulating layer closest to the first insulating layer more compact, has stronger adhesion to the first insulating layer, and provides stronger insulation, thereby preventing LED leakage. The aforementioned thicknesses also meet the lightweight requirements of LEDs, reducing their manufacturing costs.

[0195] In another example, the thicknesses of the first and second insulator layers in the second insulating layer are 1200 angstroms, 2400 angstroms, 600 angstroms, 1800 angstroms, 600 angstroms, 1800 angstroms, 600 angstroms and 1800 angstroms respectively.

[0196] In one example, the first and second insulating layers have exactly the same structure.

[0197] In another example, the first insulating layer and the second insulating layer have different structures, for example, the second insulating layer has a greater number of cycles than the first insulating layer, or the thickness of the two sub-layers in the second insulating layer is greater than that of the first insulating layer, etc.

[0198] The fourth step is to pattern the second insulating layer and open through holes in the second insulating layer at the first and second electrodes.

[0199] In this embodiment of the disclosure, a second insulating layer via is formed by dry etching.

[0200] S30. Fabricate a first pad and a second electrode pad. The first pad is connected to the first electrode through a second insulating layer through-hole at the first electrode, and the second pad is connected to the second electrode through a second insulating layer through-hole at the second electrode.

[0201] In the embodiments disclosed herein, the first pad and the second pad may be a combination of one or more of the following metal or alloy layers: Cr, Al, AlCu, Ti, Ni, Pt, Au, and AuSn.

[0202] For example, the first pad and the second pad are Cr, Al, AlCu, Ti, Ni, Pt, Au and AuSn stacks.

[0203] Table 1 below shows the test data of the light-emitting diodes (LEDs) provided in this embodiment. ΔIR is a parameter used to determine whether a chip has failed. Table 1 shows that under conditions of 85°C, 85% relative humidity, and 1mA current, after 168 hours of operation, the ΔIR of 10 LED chips is less than or equal to 1μA, and after 1000 hours of operation, the ΔIR is also less than or equal to 1μA. Therefore, all LEDs are qualified and meet the judgment criteria. It can be seen that the LEDs provided in this embodiment have good high-temperature and high-humidity resistance, no leakage current, and a high yield.

[0204] Table 1

[0205] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A light emitting diode, characterized by, The light-emitting diode includes: an epitaxial structure (10), a first insulating layer (20), and an electrode structure (30). The first insulating layer (20) covers the surface of the epitaxial structure (10). The first insulating layer (20) includes at least one periodically stacked first insulator layer (21) and second insulator layer (22), and the layer closest to the epitaxial structure (10) is the first insulator layer (21). The first insulator layer (21) is an Al2O3 layer, and the second insulator layer (22) is a SiO2 layer. The electrode structure (30) passes through the first insulating layer (20) and is electrically connected to the epitaxial structure (10).

2. The light emitting diode of claim 1, wherein, The first insulating layer (20) includes four to six alternating layers of the first insulator layer (21) and the second insulator layer (22). The thickness of the first insulator layer (21) is 500~1200 angstroms, and the thickness of the second insulator layer (22) is 1500~2500 angstroms.

3. The light emitting diode according to claim 1 or 2, characterized in that The thickness of the first insulator layer (21) closest to the epitaxial structure (10) is greater than the thickness of the other first insulator layers (21); The thickness of the second insulator layer (21) closest to the epitaxial structure (10) is greater than the thickness of the other second insulator layers (22).

4. The light emitting diode according to claim 1 or 2, wherein The first insulating layer (20) comprises four alternating layers of the first insulator layer (21) and the second insulator layer (22). The thicknesses of each of the first insulator layers (21) and the second insulator layers (22) in the first insulating layer (20) are 1000 angstroms, 2000 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms, 1500 angstroms, 500 angstroms and 1500 angstroms respectively.

5. The light emitting diode according to claim 1 or 2, wherein The light-emitting diode further includes: a second insulating layer (40) and a pad structure (50); The second insulating layer (40) covers the first insulating layer (20) and the electrode structure (30); The second insulating layer (40) includes at least one periodically alternating stacked first insulating layer (21) and second insulating layer (22), and the layer closest to the first insulating layer (20) is the first insulating layer (21). The pad structure (50) passes through the second insulating layer (40) and is electrically connected to the electrode structure (30).

6. The light emitting diode of claim 5, wherein, The second insulating layer (40) comprises four to six alternating layers of the first insulating layer (21) and the second insulating layer (22). The thickness of the first insulator layer (21) is 500~1200 angstroms, and the thickness of the second insulator layer (22) is 1500~2500 angstroms.

7. A method for fabricating a light-emitting diode, characterized in that, The method includes: Fabrication of epitaxial structures; A first insulating layer is fabricated, which covers the surface of the epitaxial structure. The first insulating layer includes at least one periodically alternating stacked first insulator layer and second insulator layer, and the layer closest to the epitaxial structure is the first insulator layer. The first insulator layer is an Al2O3 layer, and the second insulator layer is a SiO2 layer. An electrode structure is fabricated, which passes through the first insulating layer and is electrically connected to the epitaxial structure.

8. The method for fabricating a light-emitting diode according to claim 7, characterized in that, The fabrication of the first insulating layer includes: An Al2O3 layer is fabricated on the surface of the epitaxial structure using atomic deposition technology as the first insulator layer; A SiO2 layer is fabricated on the surface of the first insulator layer using atomic deposition technology to serve as the second insulator layer; Repeat the above production process alternately for 4 to 6 cycles.

9. The method for fabricating a light-emitting diode according to claim 8, characterized in that, The fabrication of the Al2O3 layer using atomic deposition technology includes: The light-emitting diode structure under fabrication is placed into the chamber of the atomic deposition equipment; The temperature in the chamber of the atomic deposition apparatus is controlled at 180~220℃, and H2O precursor is introduced and adsorbed on the surface of the epitaxial structure. The chamber of the atomic deposition apparatus was flushed with N2. TMA is introduced to react with the H2O precursor to form the Al2O3 layer.

10. The method for fabricating a light-emitting diode according to claim 8, characterized in that, The process of fabricating the SiO2 layer using atomic deposition technology includes: The light-emitting diode structure under fabrication is placed in a chamber using an atomic deposition apparatus; The temperature in the chamber of the atomic deposition apparatus is controlled to be 210~250°C, and an O3 source precursor is introduced and adsorbed onto the surface of the first insulator layer. Diisopropylammonium silane is introduced to react with the O3 source precursor to form the SiO2 layer.

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