A phosphor-free multicolor light-emitting device array and a method for fabricating the same

By directly forming a multilayer film structure light-emitting element on a sapphire substrate and utilizing the tunable In composition of the InGa1-N light-emitting layer, the problems of complex fabrication process and high cost in the prior art are solved, realizing a high-efficiency and reliable phosphor-free multicolor light-emitting device array, which is suitable for aerospace, lighting and other scenarios.

CN122248878APending Publication Date: 2026-06-19SHENZHEN XUXIN SEMICONDUCTOR CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHENZHEN XUXIN SEMICONDUCTOR CO LTD
Filing Date
2026-03-16
Publication Date
2026-06-19

AI Technical Summary

Technical Problem

The existing fabrication process of light-emitting device arrays is complex and costly, and they rely on phosphors with low conversion efficiency, making it difficult to meet the demand for high cost-effectiveness and high stability of multicolor light emission.

Method used

A multilayer film structure light-emitting element is directly formed on a sapphire substrate. Multicolor emission is achieved by utilizing the tunable In composition of the InGa1-N light-emitting layer. The elements are connected in series to form an array through conductive air bridges. The light intensity is enhanced by combining the reflective layer on the back of the substrate, eliminating the need for cutting and manual assembly steps.

Benefits of technology

It simplifies the preparation process, reduces costs, improves product reliability and electro-optical conversion efficiency, and achieves phosphorless multicolor emission, making it suitable for a variety of application scenarios.

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Abstract

This invention relates to the field of light-emitting device array technology, specifically to a phosphorless multicolor light-emitting device array and its fabrication method. It includes a substrate, multiple light-emitting elements formed directly on the substrate, and conductive bridges connecting these elements to form a series circuit. The multiple light-emitting elements are connected via conductive bridges to form a one-dimensional array, and these one-dimensional arrays are combined to form a two-dimensional array or a color two-dimensional array. By directly using a mask and thin-film growth process on a sapphire substrate, multilayer film structures of light-emitting elements are sequentially formed. The light-emitting elements are then connected in series via conductive bridges to form one-dimensional, two-dimensional, or color two-dimensional arrays. Multicolor emission is achieved by utilizing the tunable In composition of the InGaN light-emitting layer, and the light intensity is enhanced by a reflective layer on the back of the substrate. This solves the problems of complex fabrication processes, high costs, and poor reliability associated with traditional methods.
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