Light emitting device, packaging method thereof and display panel

Abstract

This disclosure provides a light-emitting device, its packaging method, and a display panel, belonging to the field of optoelectronic manufacturing technology. The packaging method includes: providing a driving panel and multiple light-emitting chips; the driving panel includes: a substrate, multiple driving ICs, and a planarization layer; the multiple driving ICs are spaced apart on the substrate; the planarization layer is located on the substrate and in the gaps between the driving ICs; etching multiple mounting grooves on the surface of the planarization layer, each mounting groove corresponding to a light-emitting chip, and the depth of the mounting groove is greater than or equal to the thickness of the light-emitting chip; transferring the multiple light-emitting chips into their corresponding mounting grooves; fabricating a metal wiring layer on the driving panel to electrically connect the driving ICs to at least one light-emitting chip; and forming an encapsulation layer on the surface of the planarization layer, covering the driving ICs and the light-emitting chips. This disclosure solves the problem of packaging stress concentration caused by the height difference between the driving ICs and the light-emitting chips.

Description

Technical Field

[0001] This disclosure relates to the field of optoelectronic manufacturing technology, and in particular to a light-emitting device, its packaging method, and a display panel. Background Technology

[0002] MIP (Micro LED in Package) is a technology that integrates three-color Micro LED chips into a single substrate. AMIP (AM IC & Micro LED in Package) is an upgrade of MIP technology. It integrates an active-matrix driver IC and three-color Micro LEDs into the same package, achieving a unified lamp driver.

[0003] In related technologies, light-emitting devices typically include: a substrate, a driver IC, and a light-emitting chip. Both the driver IC and the light-emitting chip are located on the substrate, and the electrodes of the light-emitting chip are connected to the pins of the driver IC so that the driver IC can drive the light-emitting chip.

[0004] However, the thickness of driver ICs is typically in the hundreds of micrometers, while the thickness of Micro LED chips is generally less than 10 micrometers. The significant height difference between the two when integrated on the substrate makes the metal wiring connecting them prone to breakage due to stress concentration during subsequent packaging. Summary of the Invention

[0005] This disclosure provides a light-emitting device, its packaging method, and a display panel, which can solve the problem of packaging stress concentration caused by the height difference between the driver IC and the light-emitting chip. The technical solution is as follows: This disclosure provides a packaging method for a light-emitting device. The packaging method includes: providing a driving panel and a plurality of light-emitting chips. The driving panel includes: a substrate, a plurality of driving ICs, and a planarization layer. The plurality of driving ICs are spaced apart on the substrate, and the planarization layer is located on the substrate and in the gap between each of the driving ICs. A plurality of mounting grooves are etched on the surface of the planarization layer, each mounting groove corresponding to one of the light-emitting chips, and the depth of each mounting groove is greater than or equal to the thickness of the light-emitting chip. The plurality of light-emitting chips are transferred into the corresponding mounting grooves. A metal wiring layer is prepared on the driving panel to electrically connect the driving ICs to at least one of the light-emitting chips. An encapsulation layer is formed on the surface of the planarization layer to cover the driving ICs and the light-emitting chips.

[0006] In another implementation of the present disclosure, etching a plurality of mounting grooves on the surface of the planarization layer includes: forming the mounting grooves at at least three sides of each of the driver ICs; transferring the plurality of light-emitting chips to the corresponding mounting grooves includes: transferring the light-emitting chips to the mounting grooves such that the light-emitting colors of the light-emitting chips in each of the mounting grooves around the same driver IC are different.

[0007] In another implementation of this disclosure, the driver IC has mounting slots formed on three sides, and the surface of the driver IC away from the substrate has four pins; the preparation of a metal wiring layer on the driver panel includes: connecting the first electrodes of the light-emitting cores in the three mounting slots to one of the pins via metal traces; and connecting the second electrodes of the light-emitting cores in the three mounting slots to the other three pins via metal traces.

[0008] In another implementation of the present disclosure, transferring the plurality of light-emitting cores to the corresponding mounting slots includes: forming an adhesive layer in the mounting slots; transferring each of the light-emitting cores to the corresponding mounting slots, and adhering each of the light-emitting cores through the adhesive layer.

[0009] In another implementation of the present disclosure, etching a plurality of mounting grooves on the surface of the planarization layer includes: etching the planarization layer to form the mounting grooves with a depth of 10 μm to 15 μm, a length of 35 μm to 40 μm, and a width of 20 μm to 25 μm.

[0010] In another implementation of the present disclosure, etching a plurality of mounting grooves on the surface of the planar layer further includes controlling the spacing between adjacent mounting grooves to be 5 μm to 10 μm.

[0011] In another implementation of the present disclosure, after forming an encapsulation layer on the surface of the planarization layer, the method further includes: thinning the substrate to the bottom of the mounting groove to expose the light-emitting surface of the light-emitting chip near the substrate.

[0012] In another implementation of the present disclosure, after thinning the substrate to the bottom of the mounting groove, the method further includes: cutting the driving panel into a plurality of light-emitting devices, each light-emitting device including at least one driving IC and at least one light-emitting core electrically connected to the driving IC; and forming a protective film between the light-emitting surface of the light-emitting core and the surface of the driving IC.

[0013] This disclosure provides a light-emitting device, which is packaged using the packaging method described above. The light-emitting device includes at least one of the driving ICs and at least one light-emitting chip electrically connected to the driving IC.

[0014] This disclosure provides a display panel, which includes a circuit board and a plurality of light-emitting devices as described above, wherein the plurality of light-emitting devices are arranged at intervals on the circuit board.

[0015] The beneficial effects of the technical solutions provided in this disclosure include at least the following: The packaging method for light-emitting devices provided in this disclosure involves etching mounting grooves in the planarization layer between the driver IC and the light-emitting chip, ensuring the groove depth is not less than the thickness of the light-emitting chip. This allows the light-emitting chip to be directly embedded within the mounting groove, achieving near-coplanarity between the surface of the light-emitting chip and the surface of the driver IC. Compared to related solutions where the driver IC and the light-emitting chip are integrated onto the same substrate, resulting in a significant height difference between them, the metal wiring must cross steps, making it prone to breakage due to stress concentration. In this disclosure, the metal wiring only needs to be connected within a plane, completely avoiding step stress and significantly improving connection reliability.

[0016] Furthermore, related technologies require thinning the driver IC to the same height as the light-emitting chip, but the ultra-thin driver IC becomes significantly more brittle and easily breaks during transfer. This disclosure, however, eliminates the need to thin the driver IC, directly utilizing the original thickness of the driver panel. By simply adapting the thickness of the light-emitting chip through slotting, it preserves the structural strength of the driver IC while avoiding the risk of fragmentation caused by thinning, thus improving operational error tolerance. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a flowchart of a packaging method for a light-emitting device provided in a disclosed embodiment; Figure 2 This is a top view of an article of a light-emitting device provided in an embodiment of this disclosure; Figure 3 This is a cross-sectional view of a light-emitting device provided in an embodiment of this disclosure; Figure 4 This is a process diagram illustrating the fabrication of a light-emitting device according to an embodiment of this disclosure; Figure 5 This is a schematic diagram of the structure of a light-emitting device provided in an embodiment of this disclosure.

[0019] The markings in the diagram are explained as follows: 11. Substrate; 12. Driver IC; 120. Pin; 13. Planarization layer; 130. Mounting slot; 20. Light-emitting core; 21. First electrode; 22. Second electrode; 30. Metal wiring layer; 40. Encapsulation layer; 50. Adhesive layer; 60. Protective film. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0021] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” “third,” and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an” or “a” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “comprising” or “including” and similar terms mean that the elements or objects preceding “comprising” or “including” encompass the elements or objects listed following “comprising” or “including” and their equivalents, and do not exclude other elements or objects. The terms “connected” or “linked” and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” “right,” “top,” and “bottom,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.

[0022] Figure 1 This is a flowchart illustrating a packaging method for a light-emitting device according to a disclosed embodiment. For example... Figure 1 As shown, the encapsulation method includes: Step S11: Provide a driving panel and multiple light-emitting cores.

[0023] The driving panel includes a substrate, multiple driving ICs and a planarization layer. The multiple driving ICs are arranged at intervals on the substrate, and the planarization layer is located on the substrate and in the gaps between the driving ICs.

[0024] Step S12: Etch multiple mounting grooves on the surface of the planar layer.

[0025] The mounting groove corresponds one-to-one with the light-emitting core, and the depth of the mounting groove is greater than or equal to the thickness of the light-emitting core.

[0026] Step S13: Transfer multiple light-emitting cores into the corresponding mounting slots.

[0027] Step S14: Prepare a metal wiring layer on the driver panel to electrically connect the driver IC to at least one light-emitting chip.

[0028] Step S15: Form an encapsulation layer on the surface of the planarization layer so that the encapsulation layer covers the driver IC and the light-emitting chip.

[0029] The packaging method for light-emitting devices provided in this disclosure involves etching mounting grooves in the planarization layer between the driver IC and the light-emitting chip, ensuring the groove depth is not less than the thickness of the light-emitting chip. This allows the light-emitting chip to be directly embedded within the mounting groove, achieving near-coplanarity between the surface of the light-emitting chip and the surface of the driver IC. Compared to related solutions where the driver IC and the light-emitting chip are integrated onto the same substrate, resulting in a significant height difference between them, the metal wiring must cross steps, making it prone to breakage due to stress concentration. In this disclosure, the metal wiring only needs to be connected within a plane, completely avoiding step stress and significantly improving connection reliability.

[0030] Furthermore, related technologies require thinning the driver IC to the same height as the light-emitting chip, but the ultra-thin driver IC becomes significantly more brittle and easily breaks during transfer. This disclosure, however, eliminates the need to thin the driver IC, directly utilizing the original thickness of the driver panel. By simply adapting the thickness of the light-emitting chip through slotting, it preserves the structural strength of the driver IC while avoiding the risk of fragmentation caused by thinning, thus improving operational error tolerance.

[0031] In step S11, the substrate is the base carrier of the driving panel. The substrate is used to support the driving IC and the planarization layer, and provides mechanical fixation to the electrical isolation base.

[0032] For example, the substrate may include: glass, silicon wafer, polyimide board and polyethylene terephthalate board.

[0033] A driver IC is a driver integrated circuit (IC). Driver ICs are arranged at intervals on a substrate and are responsible for outputting electrical signals to drive the light-emitting chips.

[0034] The planarization layer is located on the substrate and is a functional layer that fills the gaps between driver ICs. It is used to provide a flat surface for subsequent etching of mounting slots, ensuring precise embedding of light-emitting chips.

[0035] For example, the planarization layer may be a photoresist, a polyimide layer, a silicone layer, a silicon oxide layer, and a silicon nitride layer.

[0036] Alternatively, the light-emitting chip can be a Micro LED chip.

[0037] Step S12 may include forming mounting slots at at least three sides of each driver IC.

[0038] Figure 2 This is a top view of an article of a light-emitting device provided in an embodiment of this disclosure. Figure 3 This is a cross-sectional view of a light-emitting device provided in an embodiment of this disclosure.

[0039] like Figure 2 , 3 As shown, step S12 may specifically include: etching the surface of the planarization layer 13 after applying a homogenized coating, exposing and developing the pattern to at least three side areas of each driver IC 12, to form a mounting groove 130 with a groove depth not less than the thickness of the light-emitting chip 20.

[0040] Figure 4 This is a process diagram illustrating the fabrication of a light-emitting device according to an embodiment of this disclosure. Figure 4 As shown, during the etching process to form multiple mounting grooves 130, the planarization layer 13 is etched to form mounting grooves 130 with a depth of 10 μm to 15 μm, a length of 35 μm to 40 μm, and a width of 20 μm to 25 μm. The spacing between adjacent mounting grooves 130 is controlled to be 5 μm to 10 μm.

[0041] In this embodiment, the depth of the mounting groove 130 is 10μm to 15μm, slightly greater than the thickness of the Micro LED chip, ensuring that the light-emitting chip 20 is completely embedded in the mounting groove 130 without protrusions, thus avoiding uneven coverage of the subsequent encapsulation layer 40. The length and width dimensions (35μm to 40μm × 20μm to 25μm) match the Micro LED chip specifications, achieving one-to-one precise positioning, reducing electrical connection failures caused by misalignment, and improving integration yield.

[0042] like Figure 4 As shown, the spacing between adjacent mounting slots 130 is 10μm as a cutting track, providing sufficient operating space for subsequent splitting of the driving panel and avoiding damage to the light-emitting core 20 or metal wiring inside the slot during cutting; the cutting track width is adapted to the precision of laser / blade cutting process, reducing edge chipping and burrs, ensuring complete separation of individual packages, and further reducing subsequent losses.

[0043] Step S13 may include: transferring the light-emitting chip 20 into the mounting slot 130, so that the light-emitting colors of the light-emitting chips 20 in each mounting slot 130 around the same driver IC 12 are different.

[0044] Specifically, this may include the following steps: First step, such as Figure 4 As shown, an adhesive layer 50 is formed within the mounting groove 130.

[0045] For example, a liquid adhesive (such as a UV-curable adhesive with a viscosity controlled between 500 cP and 1000 cP) or an adhesive film (such as a slightly tacky polyimide film with a thickness of 5 μm to 10 μm) is uniformly coated on the bottom and sidewalls of the mounting groove 130 to ensure that the adhesive layer has appropriate tackiness to fix the light-emitting core 20 without pulling the electrode, and the elasticity of the adhesive layer can also absorb the transfer impact.

[0046] The second step, as Figure 4 As shown, each of the light-emitting core particles 20 is transferred into the corresponding mounting groove 130, and each of the light-emitting core particles 20 is adhered by the adhesive layer 50.

[0047] Specifically, this may include: allocating pre-sorted 15μm×30μm Micro LED chips (containing red, green, and blue primary colors) according to a preset program, so that the mounting slots 130 around the same driver IC 12 correspond to different colors (e.g., ...). Figure 2 As shown, the left slot emits red light, the right slot emits green light, and the top slot emits blue light.

[0048] Next, the transfer head picks up the light-emitting core 20 with a pressure of ≤1g, precisely aligns it with the center of the mounting groove 130, and controls the positioning error within 2μm. After release, the light-emitting core 20 is embedded in the adhesive layer. Because the groove depth of the mounting groove 130 is 10μm to 15μm, which is slightly larger than the thickness of the light-emitting core 20, stress-free embedding is achieved. Finally, the adhesive is cured by ultraviolet light (dispensing adhesive) or hot pressing (adhesive layer), thus completing the fixation of the light-emitting core 20.

[0049] Optionally, the plurality of light-emitting cores 20 include: a first light-emitting core 20 emitting red light, a second light-emitting core 20 emitting green light, and a third light-emitting core 20 emitting blue light.

[0050] The difference between the first luminescent core 20, the second luminescent core 20, and the third luminescent core 20 lies in the different luminescent colors of the epitaxial layer.

[0051] For the first luminescent chip 20, the epitaxial layer is a red-light epitaxial layer. For the second luminescent chip 20, the epitaxial layer is a green-light epitaxial layer. For the third luminescent chip 20, the epitaxial layer is a blue-light epitaxial layer.

[0052] The red epitaxial layer comprises a first p-type layer, a first luminescent layer, and a first n-type layer stacked sequentially.

[0053] In the red-light epitaxial layer, the first p-type layer includes a p-type AlInP layer.

[0054] The first luminescent layer comprises alternating layers of AlGaInP quantum wells and AlGaInP quantum barriers, wherein the Al content in the AlGaInP quantum well layers and AlGaInP quantum barrier layers differs. The first luminescent layer may comprise 3 to 8 alternating stacked cycles of AlGaInP quantum well layers and AlGaInP quantum barrier layers.

[0055] The first n-type layer includes an n-type AlGaInP current-spreading layer.

[0056] In this embodiment of the disclosure, the green epitaxial layer includes a second p-type layer, a second luminescent layer, and a second n-type layer stacked sequentially.

[0057] In the green epitaxial layer, the second p-type layer includes a p-type GaN layer.

[0058] The second light-emitting layer comprises alternating InGaN quantum well layers and GaN quantum barrier layers. The second light-emitting layer may include 3 to 8 alternating stacked InGaN quantum well layers and GaN quantum barrier layers.

[0059] The second n-type layer includes an n-type GaN layer.

[0060] In this embodiment of the disclosure, the blue light epitaxial layer includes a third p-type layer, a third light-emitting layer, and a third n-type layer stacked sequentially.

[0061] In the blue light epitaxial layer, the third p-type layer includes a p-type GaN layer.

[0062] The third light-emitting layer may include alternating InGaN quantum well layers and GaN quantum barrier layers. The third light-emitting layer may include 3 to 8 alternating stacked InGaN quantum well layers and GaN quantum barrier layers.

[0063] The third n-type layer includes an n-type GaN layer.

[0064] Optionally, the thickness of the light-emitting core 20 is 2 μm to 10 μm.

[0065] For example, the thickness of the red epitaxial layer is 5 μm, the thickness of the green epitaxial layer is 8 μm, and the thickness of the blue epitaxial layer is 6 μm.

[0066] Optionally, such as Figure 2 As shown, mounting grooves 130 are formed on the three sides of the driver IC 12, and the surface of the driver IC 12 away from the substrate 11 has four pins 120.

[0067] Step S14, fabricating the metal wiring layer 30 on the driving panel, may include: connecting the first electrodes 21 of the light-emitting cores 20 in the three mounting slots 130 to one of the pins 120 via metal traces; and connecting the second electrodes 22 of the light-emitting cores 20 in the three mounting slots 130 to the other three pins 120 via metal traces.

[0068] Specifically, this may include the following steps: The first step is to pre-treat the electrodes of the light-emitting core 20, clean the PN electrode of the light-emitting core 20 (e.g., the first electrode 21 is an N electrode and the second electrode 22 is a P electrode) and the surface of the pin 120 of the driver IC 12, remove the oxide layer and impurities, and ensure good electrical contact.

[0069] The second step involves spin-coating photoresist (1μm to 2μm thick) onto the surface of the driving panel, exposing it through a mask (corresponding to the wiring area where the first electrode 21 is connected to the common pin 120 and the second electrode 22 is connected to the independent pin 120), and developing it to form a patterned photoresist pattern, exposing the area to be connected.

[0070] The third step involves using electron beam evaporation or magnetron sputtering to deposit a metal thin film (such as a Ti / Cu / Ti multilayer structure with a total thickness of 0.5 μm to 1 μm) in the exposed area to form metal traces.

[0071] Among them, the first electrode 21 (such as the N electrode) of the light-emitting core 20 in the three mounting slots 130 is connected to a common pin 120 of the driver IC 12 through a horizontal trace; the second electrode 22 (such as the P electrode) of the light-emitting core 20 in each mounting slot 130 is connected to the other three signal pins 120 of the driver IC 12 (corresponding to the independent control signals of RGB three colors) through independent traces.

[0072] In this embodiment, the three mounting slots 130 correspond to different colored light-emitting chips 20. Their second electrodes 22 (P electrodes) are connected to the three signal pins 120 of the driver IC 12 via independent traces, enabling precise current adjustment for each chip. The first electrodes 21 (N electrodes) are connected to a common pin 120, simplifying power wiring. This design allows a single driver IC 12 to synchronously drive the three-color chips, directly outputting full-color signals, avoiding timing errors caused by the coordinated control of multiple driver ICs 12, and improving the consistency of display colors.

[0073] Furthermore, the three-sided mounting slot 130 layout allows the traces to be arranged along the edge of the driver IC 12, avoiding obstruction across the light-emitting chip 20. Combined with the precise slots etched by the planarization layer 13, the transfer misalignment rate of the light-emitting chip 20 is less than 0.1%, which can effectively improve the integration yield.

[0074] The fourth step is to strip off the remaining photoresist and use chemical mechanical polishing (CMP) to flatten the surface of the metal wiring layer 30, thus avoiding uneven thickness of the subsequent packaging layer 40.

[0075] Step S15 may include: applying UV-curable epoxy adhesive (5μm to 10μm thick) to the metal traces and connection nodes, covering the electrode interface and the intersection of the traces, and forming an encapsulation layer 40 after curing.

[0076] The following steps are included after step S15: First step, such as Figure 4 As shown, the substrate 11 is thinned to the bottom of the mounting groove 130, exposing the light-emitting surface of the light-emitting core 20 near the substrate 11.

[0077] Specifically, this includes: after the encapsulation layer 40 is completed, the driving panel substrate 11 is thinned. Mechanical grinding (such as diamond grinding wheel) combined with chemical mechanical polishing (CMP) process is used to gradually reduce the thickness of the substrate 11 from the initial value (such as 750 μm) to the bottom plane of the mounting groove 130.

[0078] During the thinning process, the thickness is controlled in real time through online optical monitoring (such as a laser thickness gauge) to ensure that the bottom of the groove is fully exposed and that the light-emitting surface of the light-emitting core 20 near the substrate 11 is exposed without obstruction. After thinning, the light-emitting surface is plasma cleaned to remove residual abrasive, and the surface smoothness is improved by chemical polishing (roughness < 0.5 nm) to reduce light scattering loss.

[0079] The second step, as Figure 5 As shown, the driving panel is cut into multiple light-emitting devices, each light-emitting device including at least one driving IC 12 and at least one light-emitting core 20 electrically connected to the driving IC 12.

[0080] Specifically, this includes using ultraviolet laser stealth cutting or diamond blade cutting technology to divide the panel, with the pre-reserved cutting channels in the drive panel (adjacent mounting slots 130 with a spacing of 10μm) as the boundary.

[0081] During laser cutting, energy is focused within the cutting path, and separation is achieved through mechanical breaking. Blade cutting controls the feed speed to ≤10mm / s to ensure the cutting surface is perpendicular. Each cut light-emitting device includes a driver IC 12, light-emitting cores 20 in three mounting slots 130, and a metal wiring layer 30 and a packaging layer 40 connecting the two, forming an independent light-emitting device with integrated lamp and driver.

[0082] The third step, as Figure 5 As shown, a protective film 60 is formed on the light-emitting surface of the light-emitting core 20 and the surface of the driver IC 12.

[0083] Specifically, this includes simultaneously coating a composite protective film 60 on the light-emitting surface of the light-emitting core 20 of the light-emitting device (the surface exposed after the substrate 11 is thinned) and the surface of the driving IC 12.

[0084] For example, an insulating protective adhesive (such as polyimide PI adhesive, 3μm to 5μm thick) is applied to cover the surface of the driver IC 12 and the light-emitting surface of the light-emitting chip 20 to prevent moisture intrusion. The protective adhesive can be removed as a temporary protective carrier for use.

[0085] This disclosure provides a light-emitting device, which is packaged using the packaging method described above. Figure 5 As shown, the light-emitting device includes at least one driver IC 12 and at least one light-emitting chip 20 electrically connected to the driver IC 12.

[0086] For example, such as Figure 2 As shown, the light-emitting device includes a driver IC 12 and three light-emitting chips 20. The three light-emitting chips 20 are located on three sides of the driver IC 12, such as the red light-emitting chip 20 on the left, the green light-emitting chip 20 on the right, and the blue light-emitting chip 20 on the top.

[0087] The first electrode 21 (e.g., N electrode) of each light-emitting chip 20 is connected to a common pin 120 of the driver IC 12 via a lateral trace; the second electrode 22 (e.g., P electrode) of each light-emitting chip 20 is connected to the other three signal pins 120 of the driver IC 12 via independent traces (corresponding to the independent RGB three-color control signals).

[0088] In this embodiment of the disclosure, the difference between the red light emitting core 20, the green light emitting core 20 and the blue light emitting core 20 lies in the different light emission colors of the epitaxial layer.

[0089] For red-emitting core 20, the epitaxial layer is a red-emitting epitaxial layer. For green-emitting core 20, the epitaxial layer is a green-emitting epitaxial layer. For blue-emitting core 20, the epitaxial layer is a blue-emitting epitaxial layer.

[0090] The red epitaxial layer comprises a first p-type layer, a first luminescent layer, and a first n-type layer stacked sequentially.

[0091] In the red-light epitaxial layer, the first p-type layer includes a p-type AlInP layer.

[0092] The first luminescent layer comprises alternating layers of AlGaInP quantum wells and AlGaInP quantum barriers, wherein the Al content in the AlGaInP quantum well layers and AlGaInP quantum barrier layers differs. The first luminescent layer may comprise 3 to 8 alternating stacked cycles of AlGaInP quantum well layers and AlGaInP quantum barrier layers.

[0093] The first n-type layer includes an n-type AlGaInP current-spreading layer.

[0094] In this embodiment of the disclosure, the green epitaxial layer includes a second p-type layer, a second luminescent layer, and a second n-type layer stacked sequentially.

[0095] In the green epitaxial layer, the second p-type layer includes a p-type GaN layer.

[0096] The second light-emitting layer comprises alternating InGaN quantum well layers and GaN quantum barrier layers. The second light-emitting layer may include 3 to 8 alternating stacked InGaN quantum well layers and GaN quantum barrier layers.

[0097] The second n-type layer includes an n-type GaN layer.

[0098] In this embodiment of the disclosure, the blue light epitaxial layer includes a third p-type layer, a third light-emitting layer, and a third n-type layer stacked sequentially.

[0099] In the blue light epitaxial layer, the third p-type layer includes a p-type GaN layer.

[0100] The third light-emitting layer may include alternating InGaN quantum well layers and GaN quantum barrier layers. The third light-emitting layer may include 3 to 8 alternating stacked InGaN quantum well layers and GaN quantum barrier layers.

[0101] The third n-type layer includes an n-type GaN layer.

[0102] Optionally, the thickness of the light-emitting core 20 is 2 μm to 10 μm.

[0103] For example, the thickness of the red epitaxial layer is 5 μm, the thickness of the green epitaxial layer is 8 μm, and the thickness of the blue epitaxial layer is 6 μm.

[0104] This disclosure provides a display panel, which includes a circuit board and a plurality of light-emitting devices as described above, the plurality of light-emitting devices being arranged at intervals on the circuit board.

[0105] In this embodiment of the disclosure, the circuit board is electrically connected to the light-emitting device to achieve the purpose of powering the light-emitting device from the circuit board.

[0106] The above is not intended to limit this disclosure in any way. Although this disclosure has been disclosed above through embodiments, it is not intended to limit this disclosure. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the technical solution of this disclosure. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of this disclosure without departing from the content of the technical solution of this disclosure shall still fall within the scope of the technical solution of this disclosure.

Claims

1. A method for packaging a light-emitting device, characterized in that, The encapsulation method includes: A driving panel and a plurality of light-emitting chips (20) are provided. The driving panel includes a substrate (11), a plurality of driving ICs (12) and a planarization layer (13). The plurality of driving ICs (12) are arranged at intervals on the substrate (11). The planarization layer (13) is located on the substrate (11) and is located in the gap between each of the driving ICs (12). Multiple mounting grooves (130) are etched on the surface of the planar layer (13), and each mounting groove (130) corresponds to one of the light-emitting core particles (20), and the depth of the mounting groove (130) is greater than or equal to the thickness of the light-emitting core particles (20); The plurality of light-emitting cores (20) are transferred into the corresponding mounting slots (130); A metal wiring layer (30) is prepared on the driving panel to electrically connect the driving IC (12) to at least one of the light-emitting chips (20); An encapsulation layer (40) is formed on the surface of the planar layer (13) so that the encapsulation layer (40) covers the driver IC (12) and the light-emitting chip (20).

2. The packaging method according to claim 1, characterized in that, The etching of a plurality of mounting grooves (130) on the surface of the planar layer (13) includes: The mounting slots (130) are formed at at least three sides of each of the driver ICs (12). Transferring the plurality of light-emitting cores (20) into the corresponding mounting slots (130) includes: The light-emitting core (20) is transferred into the mounting slot (130) so that the light-emitting colors of the light-emitting core (20) in each mounting slot (130) around the same driver IC (12) are different.

3. The packaging method according to claim 2, characterized in that, The mounting groove (130) is formed on three sides of the driver IC (12), and the surface of the driver IC (12) away from the substrate (11) has four pins (120). Fabricating a metal wiring layer (30) on the drive panel includes: The first electrode (21) of the light-emitting core (20) in the three mounting slots (130) is connected to one of the pins (120) through a metal trace. The second electrodes (22) of the light-emitting cores (20) in the three mounting slots (130) are respectively connected to the other three pins (120) via metal traces.

4. The packaging method according to any one of claims 1 to 3, characterized in that, Transferring the plurality of light-emitting cores (20) into the corresponding mounting slots (130) includes: An adhesive layer (50) is formed within the mounting groove (130); Each of the light-emitting cores (20) is transferred into the corresponding mounting groove (130), and each of the light-emitting cores (20) is adhered by the adhesive layer (50).

5. The packaging method according to any one of claims 1 to 3, characterized in that, The etching of a plurality of mounting grooves (130) on the surface of the planar layer (13) includes: The planarization layer (13) is etched to form the mounting groove (130) with a depth of 10 μm to 15 μm, a length of 35 μm to 40 μm, and a width of 20 μm to 25 μm.

6. The packaging method according to claim 5, characterized in that, The etching of multiple mounting grooves (130) on the surface of the planar layer (13) further includes: The spacing between adjacent mounting slots (130) is controlled to be 5 μm to 10 μm.

7. The packaging method according to any one of claims 1 to 3 and claim 6, characterized in that, After forming the encapsulation layer (40) on the surface of the planarization layer (13), the following is also included: The substrate (11) is thinned to the bottom of the mounting groove (130) to expose the light-emitting surface of the light-emitting core (20) near the substrate (11).

8. The packaging method according to claim 7, characterized in that, After thinning the substrate (11) to the bottom of the mounting groove (130), the method further includes: The driving panel is cut into a plurality of light-emitting devices, each of the light-emitting devices including at least one driving IC (12) and at least one light-emitting chip (20) electrically connected to the driving IC (12). A protective film (60) is formed on the light-emitting surface of the light-emitting core (20) and the surface of the driving IC (12).

9. A light-emitting device, characterized in that, The light-emitting device is packaged using the packaging method described in any one of claims 1 to 8, and the light-emitting device includes at least one of the driving ICs (12) and at least one of the light-emitting chips (20) electrically connected to the driving ICs (12).

10. A display panel, characterized in that, The display panel includes a circuit board and a plurality of light-emitting devices as described in claim 9, wherein the plurality of light-emitting devices are arranged at intervals on the circuit board.

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