Display device, method of manufacturing the same, and electronic device including the same

Abstract

A display device, a method of manufacturing the same, and an electronic device including the display device are provided. The display device includes: a backplane substrate including at least one driving device; at least one pixel including a first epitaxial structure, a second epitaxial structure, and a third epitaxial structure sequentially stacked on the backplane substrate; a lens on the third epitaxial structure; and an antireflective layer between the third epitaxial structure and the lens, wherein each of the first, second, and third epitaxial structures includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, the first epitaxial structure is configured to emit light of a first wavelength, the second epitaxial structure is configured to emit light of a second wavelength, and the third epitaxial structure is configured to emit light of a third wavelength, the antireflective layer comprising a material having a refractive index in the range of 1.7 to 2.1, and the antireflective layer having a thickness in the range of 75 nm to 110 nm.

Description

Technical Field

[0001] This disclosure relates to a display device capable of displaying color images, a method of manufacturing the same, and an electronic device including the display device. Background Technology

[0002] Liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays are widely used as display devices. Furthermore, technologies are being developed to manufacture high-resolution display devices using miniature light-emitting diodes (micro-LEDs). Light-emitting diodes (LEDs) offer advantages such as low power consumption and environmental friendliness. These advantages have increased industrial demand for LEDs.

[0003] LED displays that directly use micro-LEDs as pixels have been developed and commercialized. LED display pixels can be designed in various ways, and recently, various technologies have been introduced to vertically stack micro-LEDs that emit red (R) light (R-LEDs), micro-LEDs that emit green light (G-LEDs) (G-LEDs), and micro-LEDs that emit blue light (B) (B-LEDs). However, satisfactory results have not yet been achieved in terms of luminous efficiency and bonding for structures where micro-LEDs are vertically stacked.

[0004] The information disclosed in this background section was already known to or derived by the inventor before or during the implementation of embodiments of this application, or it is technical information obtained in the process of implementing embodiments. Therefore, it may contain information that does not constitute prior art known to the public. Summary of the Invention

[0005] A display device with an extended vertical stacking structure is provided.

[0006] A method for manufacturing a display device having an epitaxial vertical stacking structure is provided.

[0007] An electronic device is provided, including a display device having an epitaxial vertical stacking structure.

[0008] Additional aspects will be set forth in part in the description which follows, and will also be apparent in part from the description, or may be learned by practicing the embodiments presented in this disclosure.

[0009] According to one aspect of this disclosure, a display device may include: a backplane substrate including at least one driving device; at least one pixel including a first epitaxial structure, a second epitaxial structure, and a third epitaxial structure sequentially stacked on the backplane substrate; a lens on the third epitaxial structure; and an antireflective layer between the third epitaxial structure and the lens, wherein each of the first, second, and third epitaxial structures includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, the first epitaxial structure is configured to emit light of a first wavelength, the second epitaxial structure is configured to emit light of a second wavelength, the third epitaxial structure is configured to emit light of a third wavelength, the antireflective layer includes a material having a refractive index in the range of 1.7 to 2.1, and the antireflective layer has a thickness in the range of 75 nm to 110 nm.

[0010] The first wavelength of light may include red wavelength light, the second wavelength of light may include green wavelength light, and the third wavelength of light may include blue wavelength light.

[0011] The display device may include a reflective layer between a backplane substrate and a first epitaxial structure.

[0012] The display device may include a first p-type electrode, a second p-type electrode, and a third p-type electrode that are laterally spaced apart from each other between a backplane substrate and a first epitaxial structure, and an n-type electrode between a third epitaxial structure and an anti-reflective layer.

[0013] At least one pixel may include multiple pixels, and the anti-reflective layer may be shared by multiple pixels as a single entity.

[0014] At least one pixel may include multiple pixels, and the anti-reflective layer may include multiple anti-reflective layer portions, each corresponding to a multiple pixel.

[0015] In the third epitaxial structure, the refractive index of the second conductivity type semiconductor layer can be n1, the refractive index of the antireflection layer can be n2, and the refractive index of the lens can be n3, where n1 > n2 > n3.

[0016] According to one aspect of this disclosure, a display device may include: a backplane substrate including at least one driving device; a first epitaxial structure, a second epitaxial structure, and a third epitaxial structure, sequentially stacked on the backplane substrate; a lens on the third epitaxial structure; a first antireflective layer on the third epitaxial structure; and a second antireflective layer between the first antireflective layer and the lens, wherein each of the first, second, and third epitaxial structures includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, the first epitaxial structure is configured to emit a first wavelength of light, the second epitaxial structure is configured to emit a second wavelength of light, and the third epitaxial structure is configured to emit a third wavelength of light, the first antireflective layer has a first refractive index, the second antireflective layer has a second refractive index less than the first refractive index, and the first and second antireflective layers each have a thickness greater than 0 nm and less than or equal to 200 nm.

[0017] The first wavelength of light may include red wavelength light, the second wavelength of light may include green wavelength light, and the third wavelength of light may include blue wavelength light.

[0018] The display device may include a reflective layer between a backplane substrate and a first epitaxial structure.

[0019] The first refractive index can be 1.9 or greater, and the second refractive index can be 1.9 or less.

[0020] The refractive index of the second conductivity type semiconductor layer in the third epitaxial structure can be n1, the first refractive index can be n21, the second refractive index can be n22, the refractive index of the lens can be n3, and n1 > n21 > n22 > n3.

[0021] According to one aspect of this disclosure, a method of manufacturing a display device may include: forming a third epitaxial structure on a substrate; forming a second epitaxial structure on the third epitaxial structure; forming a first epitaxial structure on an upper portion of the second epitaxial structure to prepare a vertically stacked structure; forming a backplane substrate; bonding the vertically stacked structure to the backplane substrate such that the first epitaxial structure faces the backplane substrate; removing the substrate; forming an antireflective layer on the third epitaxial structure; and forming a lens on the antireflective layer, wherein each of the first, second, and third epitaxial structures includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, the antireflective layer includes a material having a refractive index in the range of 1.7 to 2.1, and the antireflective layer has a thickness in the range of 75 nm to 110 nm.

[0022] The first epitaxial structure can be configured to emit red wavelength light, the second epitaxial structure can be configured to emit green wavelength light, and the third epitaxial structure can be configured to emit blue wavelength light.

[0023] The method may include forming a first p-type electrode, a second p-type electrode, and a third p-type electrode that are laterally spaced apart from each other between a backplane substrate and a first epitaxial structure, and forming an n-type electrode between a third epitaxial structure and an anti-reflective layer.

[0024] In the third epitaxial structure, the refractive index of the second conductivity type semiconductor layer can be n1, the refractive index of the antireflection layer can be n2, and the refractive index of the lens can be n3, where n1 > n2 > n3.

[0025] According to one aspect of this disclosure, an electronic device may include a display device configured to form an image and a waveguide configured to guide the image to a user's eye, wherein the display device may include: a backplane substrate including at least one driving device; a first epitaxial structure, a second epitaxial structure, and a third epitaxial structure sequentially stacked on the backplane substrate; a lens on the third epitaxial structure; and an anti-reflective layer between the third epitaxial structure and the lens, wherein each of the first, second, and third epitaxial structures includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, the first epitaxial structure is configured to emit light of a first wavelength, the second epitaxial structure is configured to emit light of a second wavelength, and the third epitaxial structure is configured to emit light of a third wavelength, the anti-reflective layer includes a material having a refractive index in the range of 1.7 to 2.1, and the anti-reflective layer has a thickness in the range of 75 nm to 110 nm.

[0026] The first wavelength of light may include red wavelength light, the second wavelength of light may include green wavelength light, and the third wavelength of light may include blue wavelength light.

[0027] The electronic device may include a first p-type electrode, a second p-type electrode, and a third p-type electrode spaced laterally between a backplane substrate and a first epitaxial structure, and an n-type electrode between a third epitaxial structure and an anti-reflective layer.

[0028] In the third epitaxial structure, the refractive index of the second conductivity type semiconductor layer can be n1, the refractive index of the antireflection layer can be n2, and the refractive index of the lens can be n3, where n1 > n2 > n3. Attached Figure Description

[0029] The above and other aspects, features and advantages of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0030] Figure 1A This is a diagram illustrating a display device according to one or more embodiments;

[0031] Figure 1B This illustrates one or more embodiments of the invention. Figure 1AThe diagram shows an example of a display device that further includes a reflective layer;

[0032] Figure 2 This is a diagram illustrating examples of adding electrode structures to a display device according to one or more embodiments;

[0033] Figure 3 This is a diagram illustrating an example of providing an anti-reflective layer for multiple pixels in a display device according to one or more embodiments;

[0034] Figure 4 This is a diagram illustrating an example of providing an anti-reflective layer for each of a plurality of pixels individually in a display device according to one or more embodiments;

[0035] Figure 5 It is a diagram illustrating an anti-reflective layer according to one or more embodiments, a first layer provided on one surface of the anti-reflective layer, and a second layer provided on another surface of the anti-reflective layer;

[0036] Figure 6 It is a graph showing the results of simulations according to one or more embodiments of the transmittance of blue light (blue) incident on the antireflective layer at an incident angle of 0 to 90 degrees.

[0037] Figure 7 It is a graph showing the results of simulations of green light (green) incident on the antireflective layer at an incident angle of 0 to 90 degrees according to one or more embodiments.

[0038] Figure 8 It is a graph showing the results of simulations according to one or more embodiments of the transmittance of red light (red) incident on the antireflective layer at an incident angle of 0 to 90 degrees.

[0039] Figure 9 It is a simulated graph showing the transmittance index of an antireflective layer comprising an Al2O3 monolayer according to thickness, based on one or more embodiments.

[0040] Figure 10 This is a simulated graph showing the transmittance index of a single-layer antireflective layer having a refractive index n (n=1.9) according to one or more embodiments, based on the thickness.

[0041] Figure 11 It is a simulated graph showing the transmittance index of an antireflective layer including a SiN monolayer according to the thickness, based on one or more embodiments.

[0042] Figure 12 This is a simulated curve showing the transmittance index of a SiO2 monolayer as a comparative example based on thickness.

[0043] Figure 13 This is a simulated curve showing the transmittance index of a TiO2 monolayer as another comparative example, based on thickness.

[0044] Figure 14 This is a diagram illustrating an example of a display device according to one or more embodiments including two anti-reflective layers.

[0045] Figure 15 This is a graph showing simulation results of blue light transmittance while varying the refractive index and thickness of the first and second antireflective layers according to one or more embodiments.

[0046] Figure 16 This is a graph showing the simulation results of blue light transmittance while varying the thickness of a first antireflective layer comprising SiN and a second antireflective layer comprising Al2O3 in the range of 0 nm to 200 nm according to one or more embodiments.

[0047] Figure 17 This is a graph showing the simulation results of green light transmittance while varying the thickness of a first antireflective layer comprising SiN and a second antireflective layer comprising Al2O3 in the range of 0 nm to 200 nm according to one or more embodiments.

[0048] Figure 18 This is a graph showing the simulation results of the transmittance of red light while varying the thickness of the first antireflective layer including SiN and the thickness of the second antireflective layer including Al2O3 in the range of 0 nm to 200 nm according to one or more embodiments.

[0049] Figure 19 This is a graph showing the simulation results of blue light transmittance while varying the thickness of a first antireflective layer comprising TiO2 and a second antireflective layer comprising a material with a refractive index n (n=1.9) in the range of 0 nm to 200 nm according to one or more embodiments.

[0050] Figure 20 This is a graph showing the simulation results of green light transmittance while varying the thickness of a first antireflective layer comprising TiO2 and a second antireflective layer comprising a material with a refractive index n (n=1.9) in the range of 0 nm to 200 nm according to one or more embodiments.

[0051] Figure 21This is a graph showing the simulation results of the transmittance of red light while varying the thickness of a first antireflective layer comprising TiO2 and a second antireflective layer comprising a material with a refractive index n (n=1.9) in the range of 0 nm to 200 nm according to one or more embodiments.

[0052] Figure 22 This is a graph showing the simulation results of blue light transmittance while varying the thickness of a first antireflective layer comprising SiO2 and a second antireflective layer comprising Al2O3 in the range of 0 nm to 200 nm according to one or more embodiments.

[0053] Figure 23 This is a graph showing the simulation results of green light transmittance while varying the thickness of a first antireflective layer comprising SiO2 and a second antireflective layer comprising Al2O3 in the range of 0 nm to 200 nm according to one or more embodiments.

[0054] Figure 24 This is a graph showing the simulation results of the transmittance of red light while varying the thickness of a first antireflective layer comprising SiO2 and a second antireflective layer comprising Al2O3 in the range of 0 nm to 200 nm according to one or more embodiments.

[0055] Figure 25 This is a flowchart illustrating a method of manufacturing a display device according to one or more embodiments;

[0056] Figure 26 A diagram of an electronic device according to one or more embodiments;

[0057] Figure 27 This is a diagram illustrating an example of a miniature light-emitting display device applied to a mobile device according to one or more embodiments;

[0058] Figure 28 This is a diagram illustrating an example of a micro light-emitting display device applied to a vehicle display device according to one or more embodiments;

[0059] Figure 29 This is a diagram illustrating examples of a micro-light-emitting display device applied to augmented reality glasses according to one or more embodiments;

[0060] Figure 30 The figure illustrates examples of a miniature light-emitting display device applied to a sign according to one or more embodiments; and

[0061] Figure 31 This is a diagram illustrating examples of a micro-light-emitting display device applied to a wearable display according to one or more embodiments. Detailed Implementation

[0062] Detailed reference will now be made to embodiments, examples of which are shown in the accompanying drawings, wherein the same reference numerals always refer to the same elements. In this respect, embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, embodiments are described below only with reference to the accompanying drawings to explain various aspects. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. When following a list of elements, expressions such as “at least one of…” modify the entire list of elements, without modifying individual elements in the list. For example, the expression “at least one of a, b, and c” should be understood as only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

[0063] In the following, a display device according to various embodiments, a method of manufacturing the same, and an electronic device including the display device will be described in detail with reference to the accompanying drawings. In the following drawings, the same reference numerals denote the same parts, and for clarity and convenience of description, the dimensions of each part may be exaggerated. Terms such as first, second, etc., may be used to describe various parts, but parts should not be limited by the terms. Terms are used only for the purpose of distinguishing one part from another.

[0064] Unless the context clearly indicates otherwise, singular expressions include plural expressions. Furthermore, when a portion “includes” a component, it means that it may further include other components, and such other components are not excluded unless otherwise specified. In the accompanying drawings, for clarity, the dimensions or thicknesses of each component may be exaggerated. Additionally, when a predetermined material layer is described as existing on a substrate or another layer, that material layer may be in direct contact with the substrate or another layer, or a third layer may exist between them. Furthermore, since the materials forming each layer in the following embodiments are exemplary, other materials may be used.

[0065] It should be understood that when a component or layer is referred to as being "above," "on top," "above," "below," "under," "connected to," or "attached to" another component or layer, it can be directly above, above, below, under, connected to, or attached to the other component or layer, or there may be intermediate components or layers. Conversely, when a component is referred to as being "directly" above, directly above, directly on, directly below, directly below, directly connected to, or directly attached to another component or layer, there are no intermediate components or layers.

[0066] In addition, the terms "unit" and "module" refer to a unit that performs at least one function or operation, which can be implemented in hardware or software or in a combination of hardware and software.

[0067] The specific implementations described are examples and do not limit the scope of the technology in any way. For the sake of simplicity, descriptions of conventional electronic configurations, control systems, software, and other functional aspects of the system may be omitted. Furthermore, the connections or connecting elements between components shown in the accompanying drawings exemplify functional connections and / or physical or electrical connections and may be replaced or represented as various additional functional connections, physical connections, or electrical connections in an actual device.

[0068] The use of the term "the" and similar indicative terms can correspond to both singular and plural forms.

[0069] The operations constituting the method may be performed in an appropriate order unless explicitly stated otherwise. Furthermore, the use of all descriptive terms (e.g., etc.) is intended only to illustrate the technical concept and the scope of the claims is not limited by these terms unless otherwise specified by the claims.

[0070] Figure 1A This is a diagram illustrating a display device according to one or more embodiments.

[0071] The display device 100 includes a backplane substrate 110, a first epitaxial structure 120, a second epitaxial structure 130, a third epitaxial structure 140 sequentially stacked on the backplane substrate 110 in a direction perpendicular to the backplane substrate 110, and a lens 160 provided on the third epitaxial structure 140. Furthermore, an anti-reflective layer 150 may be provided between the third epitaxial structure 140 and the lens 160.

[0072] The backplane substrate 110 may include at least one driving device DD. The at least one driving device DD is used to electrically drive the first epitaxial structure 120, the second epitaxial structure 130, and the third epitaxial structure 140, and may include, for example, a transistor, a thin-film transistor, or a high electron mobility transistor (HEMT). However, the driving device DD is not limited thereto and may further include a capacitor.

[0073] The first epitaxial structure 120 may include a first conductivity type semiconductor layer 121, an active layer 122, and a second conductivity type semiconductor layer 123. The second epitaxial structure 130 may include a first conductivity type semiconductor layer 131, an active layer 132, and a second conductivity type semiconductor layer 133. The third epitaxial structure 140 may include a first conductivity type semiconductor layer 141, an active layer 142, and a second conductivity type semiconductor layer 143. The first epitaxial structure 120 may be configured to emit a first wavelength light, the second epitaxial structure 130 may be configured to emit a second wavelength light, and the third epitaxial structure 140 may be configured to emit a third wavelength light. The first wavelength light, the second wavelength light, and the third wavelength light may have different wavelengths.

[0074] For example, each of the first conductivity type semiconductor layers 121, 131, and 141 may include a p-type semiconductor. Alternatively, each of the first conductivity type semiconductor layers 121, 131, and 141 may include an n-type semiconductor. Each of the first conductivity type semiconductor layers 121, 131, and 141 may include a III-V group-based p-type semiconductor, such as p-GaN, p-InGaN, p-AlInGaN, or p-AlGaInP. Each of the first conductivity type semiconductor layers 121, 131, and 141 may have a single-layer or multi-layer structure.

[0075] Active layers 122, 132, and 142 may be provided on the top surfaces of first conductivity type semiconductor layers 121, 131, and 141, respectively. Active layers 122, 132, and 142 can generate light when electrons and holes combine with each other. Active layer 122 of the first epitaxial structure 120 may include a material that emits light of a first wavelength (e.g., red wavelength light). Active layer 132 of the second epitaxial structure 130 may include a material that emits light of a second wavelength (e.g., green wavelength light). Active layer 142 of the third epitaxial structure 140 may include a material that emits light of a third wavelength (e.g., blue wavelength light). However, active layers 122, 132, and 142 are not limited thereto. Each of active layers 122, 132, and 142 may have a multiple quantum well (MQW) structure or a single quantum well (SQW) structure. Each of active layers 122, 132, and 142 may include a III-V based semiconductor, such as GaN, InGaN, AlInGaN, or AlGaInP. Each of the active layers 122, 132, and 142 may include, for example, an (InGaN / GaN) quantum well structure. As the indium (In) content included in each of the active layers 122, 132, and 142 increases, the wavelength of light emitted from each of the active layers 122, 132, and 142 may increase.

[0076] Second conductivity type semiconductor layers 123, 133, and 143 may be provided on the top surfaces of active layers 122, 132, and 142, respectively. Each of the second conductivity type semiconductor layers 123, 133, and 143 may include, for example, an n-type semiconductor. Alternatively, each of the second conductivity type semiconductor layers 123, 133, and 143 may include a p-type semiconductor. Each of the second conductivity type semiconductor layers 123, 133, and 143 may include a III-V group-based n-type semiconductor, such as n-GaN, n-InGaN, n-AlInGaN, or n-AlGaInP. Each of the second conductivity type semiconductor layers 123, 133, and 143 may have a single-layer structure or a multi-layer structure.

[0077] Light emitted from the first epitaxial structure 120, the second epitaxial structure 130, and the third epitaxial structure 140 can be emitted upwards. The upward-emitted light can pass through the anti-reflective layer 150 and enter the lens 160.

[0078] The anti-reflective layer 150 may include a material that reduces or prevents reflection by suppressing downward reflection of light when light emitted from the first epitaxial structure 120, the second epitaxial structure 130, and the third epitaxial structure 140 is emitted upwards. The display device 100 has a vertically stacked structure in which the first epitaxial structure 120, the second epitaxial structure 130, and the third epitaxial structure 140 are stacked in a direction perpendicular to the backplane substrate 110. Therefore, a first wavelength light, a second wavelength light, and a third wavelength light emitted from the first epitaxial structure 120, the second epitaxial structure 130, and the third epitaxial structure 140, respectively, pass through the anti-reflective layer 150 together. In other words, the anti-reflective layer 150 can reflect and transmit the first wavelength light, the second wavelength light, and the third wavelength light together. The anti-reflective layer 150 may have different reflectivities or transmittances depending on the wavelength. Furthermore, the reflectivity of the anti-reflective layer 150 may vary depending on its constituent materials and thickness. Since the display device 100 according to one or more embodiments has a vertically stacked structure, the antireflective layer 150 needs to be designed to increase the transmittance of each of the first wavelength light, the second wavelength light, and the third wavelength light. By adjusting the constituent materials and thickness of the antireflective layer 150, the reflectance of each of the first wavelength light, the second wavelength light, and the third wavelength light can be reduced, and their transmittance can be increased. The antireflective layer 150 may include a material having a refractive index in the range of 1.7 to 2.1. The antireflective layer 150 may have a thickness in the range of 75 nm to 110 nm. When the antireflective layer 150 meets these conditions, the transmittance of each of the first wavelength light, the second wavelength light, and the third wavelength light can be increased by 4% or more. The rate of increase in transmittance of the first wavelength light, the second wavelength light, and the third wavelength light through the antireflective layer 150 may be in the ranges of 5% or more, 6% or more, 15% or less, 13% or less, and 10% or less, respectively. Here, the transmittance improvement rate represents the ratio of the increase in transmittance with antireflective layer 150 compared to the transmittance without antireflective layer, to the transmittance without antireflective layer. For example, antireflective layer 150 may include Al2O3, SiN, TiO2, ZrO2, ZnO, Ta2O3, or SiON. Antireflective layer 150 can transmit multiple wavelengths of light with high transmittance.

[0079] The first wavelength light, the second wavelength light, and the third wavelength light that pass through the anti-reflective layer 150 can be incident on the lens 160 with high luminous efficiency and can be converged by the lens 160.

[0080] As described above, since the display device 100 according to one or more embodiments has a vertically stacked structure, the area of ​​a single pixel emitting multiple wavelengths of light can be reduced. Furthermore, the display device 100 can display color images with high luminous efficiency and high resolution by including an anti-reflective layer 150 to improve the luminous efficiency of each of the multiple wavelengths of light.

[0081] Figure 1B This illustrates one or more embodiments of the invention. Figure 1A The diagram shows an example of a display device that further includes a reflective layer. Figure 1B In, it has the same Figure 1A The parts with the same reference numerals in the accompanying drawings have the same Figure 1A The components described herein have essentially the same configuration and function, so their detailed descriptions can be omitted.

[0082] refer to Figure 1B The display device 100A may include a reflective layer 111 between the backplane substrate 110 and the first epitaxial structure 120. The reflective layer 111 may include, for example, Ag, Au, Al, Cr, or Ni, or alloys thereof. However, the reflective layer 111 is not limited to these materials. When light emitted from the first epitaxial structure 120, the second epitaxial structure 130, and the third epitaxial structure 140 is emitted downwards, the reflective layer 111 reflects the downwardly emitted light, causing the light to be emitted again towards the upper part of the display device 100A, thereby improving luminous efficiency.

[0083] Figure 2 This is a diagram illustrating examples of adding an electrode structure to a display device according to one or more embodiments.

[0084] Display device 100B has added Figure 1A The electrode structure of the display device 100 shown. Figure 2 In, it has the same Figure 1A The parts with the same reference numerals in the accompanying drawings have the same Figure 1A The components described herein have essentially the same configuration and function, so their detailed descriptions can be omitted.

[0085] In the display device 100B, the first p-type electrode 115a, the second p-type electrode 115b, and the third p-type electrode 115c may be provided to be spaced apart from each other (e.g., laterally spaced) and may be located between the backplane substrate 110 and the first epitaxial structure 120. A pad 112 may be provided between each of the first p-type electrode 115a, the second p-type electrode 115b, and the third p-type electrode 115c and the backplane substrate 110. The first p-type electrode 115a, the second p-type electrode 115b, and the third p-type electrode 115c may include at least one of Au, Cu, Ni, Ag, Cr, W, Al, Pt, Sn, Pb, Fe, Ti, and Mo, or may include any one of ITO, ZrB, ZnO, InO, and SnO.

[0086] The first p-type electrode 115a can be electrically connected to the first conductivity type semiconductor layer 141 of the third epitaxial structure 140 through the first pass electrode 117. The second p-type electrode 115b can be electrically connected to the first conductivity type semiconductor layer 131 of the second epitaxial structure 130 through another first pass electrode 117. The third p-type electrode 115c can be directly connected to the first conductivity type semiconductor layer 121 of the first epitaxial structure 120.

[0087] An n-type electrode 145 may be provided between the second conductivity type semiconductor layer 143 and the antireflective layer 150 of the third epitaxial structure 140. The n-type electrode 145 may include a transparent electrode through which light can pass. The n-type electrode 145 may be electrically connected to the second conductivity type semiconductor layer 123 of the first epitaxial structure 120 and the second conductivity type semiconductor layer 133 of the second epitaxial structure 130 via corresponding second pass electrodes 147. The second conductivity type semiconductor layer 143 of the third epitaxial structure 140 may be directly connected to the n-type electrode 145.

[0088] The display device 100B may further include a first insulating layer 118 provided as a sidewall surrounding each first pass electrode 117 and a second insulating layer 148 provided as a sidewall surrounding each second pass electrode 147. The first insulating layer 118 may insulate the first pass electrode 117 from each of the first epitaxial structure 120 and the second epitaxial structure 130. An n-type electrode 145 may be electrically connected to a second conductivity type semiconductor layer 123 of the first epitaxial structure 120 via the second pass electrode 147, and the second insulating layer 148 may insulate the second pass electrode 147 from the second epitaxial structure 130 and the third epitaxial structure 140. The n-type electrode 145 may be electrically connected to a second conductivity type semiconductor layer 133 of the second epitaxial structure 130 via other second pass electrodes 147, and the second insulating layer 148 may insulate the other second pass electrodes 147 from the third epitaxial structure 140. The first insulating layer 118 and the second insulating layer 148 may include insulating materials. The first insulating layer 118 and the second insulating layer 148 may include, for example, SiO2, Si3N4, HfO2 or Al2O3.

[0089] The electrode structure described above can be a so-called vertical electrode structure. However, the electrode structure of the display device according to one or more embodiments is not limited to this, and may have a horizontal electrode structure.

[0090] Figure 3 This is a diagram illustrating an example of providing an anti-reflective layer for multiple pixels in a display device according to one or more embodiments. Figure 3 A display device according to one or more embodiments is shown, comprising a plurality of pixels PX. The plurality of pixels PX may be arranged to be spaced apart from each other. Each of the plurality of pixels PX may have Figure 1A The structure shown, and here, for convenience, in Figure 3 The structure is briefly illustrated in Figure 1. Each of the plurality of pixels PX may include the first epitaxial structure 120, the second epitaxial structure 130, and the third epitaxial structure 140 shown in Figure 1, and may have a structure in which the anti-reflective layer 150 is connected to the plurality of pixels PX as a single entity. That is, in Figure 3 In this configuration, the anti-reflective layer 150 is shared as a single entity across multiple pixels. This simplifies the manufacturing process by forming the anti-reflective layer 150 as a single layer.

[0091] Figure 4 This diagram illustrates an example of providing an anti-reflective layer for each of a plurality of pixels individually in a display device according to one or more embodiments. That is, Figure 4An example is shown where an anti-reflective layer 150A is provided separately for each of multiple pixels PX. As described above, the anti-reflective layers 150A can be spaced apart from each other according to the multiple pixels PX. In other words, the anti-reflective layer 150 can be divided into multiple anti-reflective layer portions 150A, each of which corresponds to a pixel PX.

[0092] Next, the operational effects of the display device according to one or more embodiments will be described.

[0093] Figure 5 This is a diagram illustrating an anti-reflective layer according to one or more embodiments, a first layer provided on one surface of the anti-reflective layer, and a second layer provided on another surface of the anti-reflective layer. That is, Figure 5 The diagram schematically illustrates an anti-reflective layer 220, a first layer 210 on one side of the anti-reflective layer 220, and a second layer 230 on the other side of the anti-reflective layer 220. The first layer 210 may be, for example... Figure 1A The third epitaxial structure 140 in the illustrated display device 100 has a second conductive semiconductor layer 143, and the second layer 230 can be a lens 160. For this three-layer structure, the transmittance of light is simulated while changing the refractive index and thickness of the anti-reflective layer 220.

[0094] Figure 6 This is a graph showing the transmittance of blue light (blue) incident on the antireflective layer 220 at incident angles from 0 to 90 degrees, according to simulations based on one or more embodiments. Figure 6 In the graph, the horizontal axis represents refractive index, and the vertical axis represents thickness. The transmittance of blue light was simulated while the refractive index varied from 1.4 to 2.4 and the thickness varied from 0 nm to 200 nm. The color-coded heading on the right side of the graph indicates the transmittance index, which represents the ratio of transmittance with and without an anti-reflective layer. In other words, providing an anti-reflective layer increases transmittance. Higher thickness results in higher transmittance and lower reflectance. (Reference) Figure 6 The region represented by B indicates a region with high blue light transmittance, and the region represented by XB indicates a region with the highest blue light transmittance. Figure 6 In the diagram, the region G indicated by the dashed line represents the region with high transmittance of green light, which will be described later, and the region R indicated by the long and short dashed lines represents the region with high transmittance of red light, which will be described later.

[0095] Figure 7 This is a graph showing the transmittance of green light (green) incident on the antireflective layer 220 at incident angles from 0 to 90 degrees, according to simulations based on one or more embodiments. Reference Figure 7The region represented by G represents the region with high green light transmittance, and the region represented by XG represents the region with the highest green light transmittance.

[0096] Figure 8 This is a graph showing the transmittance of red light (red) incident on the antireflective layer 220 at incident angles from 0 to 90 degrees, according to simulations based on one or more embodiments. (Reference) Figure 8 The region represented by R represents the region with high red light transmittance, and the region represented by XR represents the region with the highest red light transmittance.

[0097] refer to Figure 6 , Figure 7 and Figure 8 This allows us to obtain a region with high transmittance for blue, green, and red light. For ease of description, in... Figure 6 , Figure 7 and Figure 8 The diagram shows regions B, G, and R with high transmittance, and based on this, Figure 5 The antireflective layer 220 can have a refractive index in the range of 1.7 to 2.1. Furthermore, the thickness of the antireflective layer 220 can be in the range of 75 nm to 110 nm.

[0098] In the display device 100, the external quantum efficiency (EQE) and internal quantum efficiency (IQE) of each of the active layers 122, 132, and 142 may decrease with increasing emission wavelength. Furthermore, with increasing indium content in each of the active layers 122, 132, and 142, defects due to lattice mismatch may increase. Therefore, the luminous efficiency of red light may be relatively low among blue, green, and red light. Thus, the thickness and refractive index of the antireflective layer 220 can be determined based on regions with high transmittance of red light among blue, green, and red light.

[0099] As described above, the antireflective layer 150 of the display device 100 according to one or more embodiments has a refractive index in the range of 1.7 to 2.1 and a thickness in the range of 75 nm to 110 nm. Therefore, the antireflective layer 150 can have high transmittance for blue light, green light and red light in common, and can be effectively applied to a vertical stacking structure that uses a common area for each color of light in a pixel.

[0100] Figure 9This is a simulated graph showing the transmittance index of an antireflective layer comprising an Al2O3 monolayer according to thickness, based on one or more embodiments. Here, the transmittance index represents the ratio of transmittance with the antireflective layer to transmittance without the antireflective layer. The refractive index of Al2O3 is approximately 1.76. Within a thickness range of 75 nm to 110 nm, the transmittance for each of blue, green, and red light is increased by 4% to 8%.

[0101] Figure 10 This is a simulated graph showing the transmittance index of a single-layer antireflective layer having a refractive index n (n=1.9) according to one or more embodiments, based on thickness. Within a thickness range of 75 nm to 110 nm, the transmittance for each of blue, green, and red light is increased by 6% to 9%.

[0102] Figure 11 This is a simulated graph showing the transmittance of an antireflective layer comprising a SiN monolayer according to thickness, based on one or more embodiments. The refractive index of SiN is approximately 2.1. Within a thickness range of 75 nm to 110 nm, transmittance for each of blue, green, and red light is increased by 2% to 5%.

[0103] Figure 12 This is a simulated graph showing the transmittance of a SiO2 monolayer as a comparative example, based on thickness. The refractive index of SiO2 is approximately 1.46. Regardless of thickness, the SiO2 monolayer exhibits lower transmittance than the case without a SiO2 monolayer.

[0104] Figure 13 This is a simulated graph showing the transmittance of a TiO2 monolayer as a comparative example, based on thickness. The refractive index of TiO2 is approximately 2.4. In the thickness range of 75 nm to 110 nm, the TiO2 monolayer shows a small improvement of less than 2% in the transmittance of blue, green, and red light.

[0105] refer to Figure 5 When the refractive index of the first layer 210 is n1, the refractive index of the antireflective layer 220 is n2, and the refractive index of the second layer 230 is n3, where n1 > n2 > n3. Thus, when a material with a lower refractive index is included in the direction in which light is guided from the layer adjacent to the antireflective layer 220 to the lens 160 (i.e., in the direction in which light is emitted to the outside), the transmittance of light can be improved. Figure 5 The layer structure shown is applied to Figure 1AWhen the refractive index of the second conductivity type semiconductor layer 143 of the third epitaxial structure 140 is n1, the refractive index of the antireflective layer 150 is n2, and the refractive index of the lens 160 is n3, where n1 > n2 > n3.

[0106] Figure 14 This is a diagram illustrating an example of a display device according to one or more embodiments comprising two anti-reflective layers. Figure 14 In, it has the same Figure 1A The parts with the same reference numerals in the accompanying drawings have the same Figure 1A The components described herein have essentially the same configuration and function, so their detailed descriptions can be omitted.

[0107] refer to Figure 14 The display device 200 may include a first antireflective layer 251 and a second antireflective layer 252 between the third epitaxial structure 140 and the lens 160. The first antireflective layer 251 and the second antireflective layer 252 may be sequentially arranged from the third epitaxial structure 140. The first antireflective layer 251 may include a first refractive index, and the second antireflective layer 252 may include a second refractive index less than the first refractive index. For example, the first antireflective layer 251 may include a refractive index of 1.9 or greater, and the second antireflective layer 252 may include a refractive index of 1.9 or less. For example, the first antireflective layer 251 may include a refractive index of 1.9 to 2.5, and the second antireflective layer 252 may include a refractive index of 1.4 to 1.9. However, the refractive indices of the first antireflective layer 251 and the second antireflective layer 252 are not limited thereto. The thickness d1 of the first antireflective layer 251 and the thickness d2 of the second antireflective layer 252 may each have a thickness greater than 0 nm and equal to or less than 200 nm.

[0108] Furthermore, when the refractive index of the second conductivity type semiconductor layer 143 having the third epitaxial structure 140 is n1, the refractive index of the first antireflective layer 251 is n21, the refractive index of the second antireflective layer 252 is n22, and the refractive index of the lens 160 is n3, where n1 > n21 > n22 > n3.

[0109] The light transmittance can be improved by adjusting the refractive index and thickness of the first antireflective layer 251 and the second antireflective layer 252, which have a double-layer structure, thereby improving the luminous efficiency of the display device 200.

[0110] Figure 15 This is a graph illustrating simulation results of blue light transmittance while varying the refractive index and thickness of the first and second antireflective layers according to one or more embodiments. That is, Figure 15The results of simulating blue light transmittance while varying the refractive indices and thicknesses of the first and second antireflective layers 251 and 252 are shown. The horizontal axis represents the refractive index of the first antireflective layer 251, and the vertical axis represents the refractive index of the second antireflective layer 252. For the refractive index, the material names SiO2, Al2O3, SiN, and TiO2 are used instead. The refractive index of SiO2 is approximately 1.46, that of Al2O3 is approximately 1.76, that of SiN is approximately 2.1, and that of TiO2 is approximately 2.4. Figure 15 The maximum values ​​of the transmittance simulations, where the thickness of the double-layered antireflective layer made of the corresponding materials is varied along the horizontal and vertical axes, are shown as values ​​at the corresponding coordinates. For example, in Figure 15 In the graph, coordinate A1 shows a maximum transmittance of 9.5% in a simulation comprising a first antireflective layer 251 containing SiN and a second antireflective layer 252 containing Al2O3. Similarly, coordinate A2 shows a maximum transmittance of 8.9% in a simulation comprising a first antireflective layer 251 containing TiO2 and a second antireflective layer 252 containing a material with a refractive index n (n=1.9). The size of the circle shown in each coordinate in the graph is a relative representation of the transmittance value; that is, the larger the circle size, the greater the transmittance.

[0111] Figure 16 This is a graph showing the simulation results of blue light transmittance while varying the thickness of a first antireflective layer comprising SiN and a second antireflective layer comprising Al2O3 in the range of 0 nm to 200 nm according to one or more embodiments. Figure 17 This is a graph showing the simulation results of green light transmittance while varying the thickness of a first antireflective layer comprising SiN and a second antireflective layer comprising Al2O3 in the range of 0 nm to 200 nm according to one or more embodiments. Figure 18 This is a graph showing the simulation results of red light transmittance while varying the thickness of a first antireflective layer comprising SiN and a second antireflective layer comprising Al2O3 in the range of 0 nm to 200 nm according to one or more embodiments.

[0112] Figure 16 , Figure 17 and Figure 18 It shows Figure 15 Detailed simulation results for coordinate A1. Figure 16 A simulation of blue light is shown. Figure 17 A simulation of green light is shown. Figure 18A simulation of red light is shown. Here, transmittance is simulated by varying the thickness of a first antireflective layer 251 comprising SiN and a second antireflective layer 252 comprising Al2O3 within the range of 0 nm to 200 nm. The color-coded headings indicate transmittance indices, with transmittance indices C1, C2, and C3 satisfying C1>C2>C3. Figure 16 , Figure 17 and Figure 18 The values ​​shown in the coordinates represent the transmittance index of the corresponding thickness structure. (Reference) Figure 16 For example, when the first antireflective layer 251, comprising SiN, has a thickness of approximately 45 nm and the second antireflective layer 252, comprising Al2O3, has a thickness of approximately 83 nm, the blue light transmittance is 1.094. In other words, the transmittance is approximately 9.4% higher than without the antireflective layer. (Reference) Figure 17 When the first antireflective layer 251, comprising SiN, has a thickness of approximately 90 nm and the second antireflective layer 252, comprising Al2O3, has a thickness of approximately 120 nm, the green light transmittance is 1.093. (Reference) Figure 18 For example, when the first antireflective layer 251 comprising SiN has a thickness of approximately 90 nm and the second antireflective layer 252 comprising Al2O3 has a thickness of approximately 120 nm, the red light transmittance index is 1.09. (Reference) Figure 16 , Figure 17 and Figure 18 The thickness of the first antireflective layer 251, which includes SiN, can be less than the thickness of the second antireflective layer 252, which includes Al2O3.

[0113] Figure 19 This is a graph showing the simulation results of blue light transmittance while varying the thickness of a first antireflective layer comprising TiO2 and a second antireflective layer comprising a material with a refractive index n (n=1.9) in the range of 0 nm to 200 nm according to one or more embodiments. Figure 20 This is a graph showing the simulation results of green light transmittance while varying the thickness of a first antireflective layer comprising TiO2 and a second antireflective layer comprising a material with a refractive index n (n=1.9) in the range of 0 nm to 200 nm according to one or more embodiments. Figure 21 This is a graph showing the simulation results of red light transmittance while varying the thickness of a first antireflective layer comprising TiO2 and a second antireflective layer comprising a material with a refractive index n (n=1.9) in the range of 0 nm to 200 nm according to one or more embodiments.

[0114] Figure 19 , Figure 20 and Figure 21 It shows Figure 15 Detailed simulation results for coordinate A2. Figure 19 A simulation of blue light is shown. Figure 20 A simulation of green light is shown. Figure 21 A simulation of red light is shown. Here, transmittance is simulated by varying the thickness of a first antireflective layer 251 comprising TiO2 and a second antireflective layer 252 comprising a material having a refractive index n (n=1.9) in the range of 0 nm to 200 nm. Figure 19 , Figure 20 and Figure 21 The values ​​shown in the coordinates represent the transmittance index of the corresponding thickness structure. (Reference) Figure 19 For example, when a first antireflective layer 251 comprising TiO2 has a thickness of approximately 150 nm and a second antireflective layer 252 comprising a material having a refractive index n (n=1.9) has a thickness of approximately 89 nm, the blue light transmittance index is approximately 1.089. (Reference) Figure 20 When a first antireflective layer 251 comprising TiO2 has a thickness of approximately 60 nm and a second antireflective layer 252 comprising a material having a refractive index n (n=1.9) has a thickness of approximately 80 nm, the green light transmittance is approximately 1.077. (Reference) Figure 21 For example, when a first antireflective layer 251 comprising TiO2 has a thickness of about 10 nm and a second antireflective layer 252 comprising a material having a refractive index n (n=1.9) has a thickness of about 120 nm, the red light transmittance index is about 1.076.

[0115] Figure 22 This is a graph showing the simulation results of blue light transmittance while varying the thickness of a first antireflective layer comprising SiO2 and a second antireflective layer comprising Al2O3 in the range of 0 nm to 200 nm according to one or more embodiments. Figure 23 This is a graph showing the simulation results of green light transmittance while varying the thickness of a first antireflective layer comprising SiO2 and a second antireflective layer comprising Al2O3 in the range of 0 nm to 200 nm according to one or more embodiments. Figure 24 This is a graph showing the simulation results of the transmittance of red light while varying the thickness of a first antireflective layer comprising SiO2 and a second antireflective layer comprising Al2O3 in the range of 0 nm to 200 nm according to one or more embodiments.

[0116] Figure 22 , Figure 23 and Figure 24Simulations of transmittance are shown while varying the thickness of a first antireflective layer 251 comprising SiO2 and a second antireflective layer 252 comprising Al2O3 within the range of 0 nm to 200 nm. Figure 22 The simulation of blue light transmittance is shown. Figure 23 The simulation of the transmittance for green light is shown. Figure 24 A simulation of the transmittance for red light is shown. Return to reference. Figure 15 When the first antireflective layer 251 containing SiO2 and the second antireflective layer 252 containing Al2O3 are included, the maximum transmittance of blue light is 7.3%. Figure 22 Detailed simulation results for blue light are shown. For example, when the first antireflective layer 251, which includes SiO2, has a thickness of approximately 5 nm and the second antireflective layer 252, which includes Al2O3, has a thickness of approximately 120 nm, the blue light transmittance index is approximately 1.073. Figure 23 Detailed simulation results for green light are shown. For example, when the first antireflective layer 251, which includes SiO2, has a thickness of approximately 5 nm and the second antireflective layer 252, which includes Al2O3, has a thickness of approximately 118 nm, the transmittance index for green light is approximately 1.077. Figure 24 Detailed simulation results for red light are shown. For example, when the first antireflective layer 251, comprising SiO2, has a thickness of approximately 10 nm and the second antireflective layer 252, comprising Al2O3, has a thickness of approximately 110 nm, the red light transmittance is approximately 1.073. (Reference) Figure 22 , Figure 23 and Figure 24 The thickness of the first antireflective layer 251, which includes SiO2, can be less than the thickness of the second antireflective layer 252, which includes Al2O3.

[0117] As described above, the display device 200 according to one or more embodiments may include two anti-reflective layers 251 and 252 to improve the transmittance of light beams of various colors.

[0118] Figure 25 This is a flowchart illustrating a method for manufacturing a display device according to one or more embodiments. The method for manufacturing a display device according to one or more embodiments may include an operation S10 of forming a third epitaxial structure on a substrate, an operation S20 of forming a second epitaxial structure on the third epitaxial structure, and an operation S30 of forming a first epitaxial structure on the second epitaxial structure, thereby preparing a vertically stacked structure. The substrate is a growth substrate for growing epitaxial structures thereon, and the substrate may include, for example, silicon, sapphire, or GaAs. However, the embodiments are not limited thereto, and the substrate may include materials other than silicon, sapphire, or GaAs.

[0119] For example, the third epitaxial structure can emit blue light, the second epitaxial structure can emit green light, and the first epitaxial structure can emit red light. Here, compared to Figure 1, the first, second, and third epitaxial structures use the same names as their corresponding components. When the third, second, and first epitaxial structures are grown on the substrate, the third epitaxial structure formed first on the substrate may have relatively more defects than the first epitaxial structure formed later. Therefore, it is preferable to form the first epitaxial structure last for emitting red light with relatively low luminous efficiency.

[0120] Then, a backplane substrate is formed in operation S40. The backplane substrate may include at least one driving device. In operation S50, the vertical stacked structure is bonded to the backplane substrate by flipping the vertical stacked structure upside down so that the first epitaxial structure faces the backplane substrate. The vertical stacked structure may have a structure in which the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure are sequentially stacked from the backplane substrate in the vertical direction. As described above, the first epitaxial structure that emits red light can be formed in the later stage of the growth process; therefore, flipping the vertical stacked structure and bonding it to the backplane substrate allows the first epitaxial structure to be located on the backplane substrate. In this way, after the vertical stacked structure is bonded to the backplane substrate, the substrate can be removed in operation S60. Furthermore, in operation S70, an anti-reflective layer can be formed on the third epitaxial structure. In operation S80, a lens can be formed on the anti-reflective layer.

[0121] In this way, a display device including an anti-reflective layer can be manufactured. The operation of forming the anti-reflective layer may include the operation of forming a first anti-reflective layer and the operation of forming a second anti-reflective layer.

[0122] Each of the formation of the first epitaxial structure, the formation of the second epitaxial structure, and the formation of the third epitaxial structure may include forming a first conductivity type semiconductor layer, forming an active layer, and forming a second conductivity type semiconductor layer.

[0123] As described above, a display device according to one or more embodiments may include an anti-reflective layer capable of collectively increasing the transmittance of each of blue, green, and red light. By adjusting the thickness and refractive index of the anti-reflective layer, it can be configured to have optimal transmittance for multiple color beams. Thus, a display device with a vertically stacked structure can improve luminous efficiency by increasing the transmittance of each of blue, green, and red light without the need for color filters. A display device with improved luminous efficiency for multiple color beams can be applied to various electronic devices.

[0124] Figure 26 It is a diagram of an electronic device according to one or more embodiments.

[0125] refer to Figure 26 In the network environment 8200, an electronic device 8201 can be provided. In the network environment 8200, the electronic device 8201 can communicate with another electronic device 8202 via a first network 8298 (such as a short-range wireless communication network), or with another electronic device 8204 and / or a server 8208 via a second network 8299 (such as a long-range wireless communication network). The electronic device 8201 can communicate with the electronic device 8204 via the server 8208. The electronic device 8201 may include a processor 8220, a memory 8230, an input device 8250, a sound output device 8255, a display device 8260, an audio module 8270, a sensor module 8276, an interface 8277, a haptic module 8279, a camera module 8280, a power management module 8288, a battery 8289, a communication module 8290, a user identification module 8296, and / or an antenna module 8297. Some of these components can be omitted from electronic device 8201, or other components can be added to electronic device 8201. Some of these components can be implemented as an integrated circuit. For example, sensor module 8276 (fingerprint sensor, iris sensor, illumination sensor, etc.) can be implemented by embedding it in display device 8260 (display, etc.).

[0126] Processor 8220 can execute software (program 8240, etc.) to control one or more other components (hardware components and software components, etc.) of electronic device 8201 connected to processor 8220, and can perform various data processing or operations. As part of the data processing or operation, processor 8220 can load commands and / or data received from other components (sensor module 8276, communication module (8290, etc.)), process commands and / or data stored in volatile memory 8232, and store result data in non-volatile memory 8234. Non-volatile memory 8234 may include internal memory 8236 and external memory 8238. Processor 8220 may include a main processor 8221 (central processing unit, application processor, etc.) and an auxiliary processor 8223 (graphics processing unit, image signal processor, sensor central processor, communication processor, etc.) that can operate independently of or in conjunction with the main processor 8221. Auxiliary processor 8223 can use less power than the main processor 8221 and perform specific functions.

[0127] When the main processor 8221 is inactive (sleep state), the auxiliary processor 8223 can replace the main processor 8221 in controlling some functions and / or states related to components of the electronic device 8201 (display device 8260, sensor module 8276, communication module 8290, etc.), or when the main processor 8221 is active (application execution state), it can work with the main processor 8221 to control some functions and / or states related to components of the electronic device 8201 (display device 8260, sensor module 8276, communication module 8290, etc.). The auxiliary processor 8223 (image signal processor, communication processor, etc.) can be implemented as part of other functionally related components (camera module 8280, communication module 8290, etc.).

[0128] The memory 8230 can store various data required by the components of the electronic device 8201 (processor 8220 and sensor module 8276). The data may include, for example, input and / or output data for software (program 8240, etc.) and related commands. The memory 8230 may include volatile memory 8232 and / or non-volatile memory 8234.

[0129] The program 8240 can be stored as software in the memory 8230 and may include an operating system 8242, middleware 8244 and / or application 8246.

[0130] Input device 8250 can receive commands and / or data used in components (processor 8220, etc.) of electronic device 8201 from outside the electronic device 8201 (such as a user). Input device 8250 may include a remote controller, microphone, mouse, keyboard and / or digital pen (such as a stylus pen).

[0131] The sound output device 8255 can output sound signals to the outside of the electronic device 8201. The sound output device 8255 may include a speaker and / or a receiver. The speaker can be used for general purposes such as multimedia playback or recording records, and the receiver can be used to receive incoming calls. The receiver can be integrated as part of the speaker or can be implemented as a separate, independent device.

[0132] Display device 8260 can visually provide information to the outside of electronic device 8201. Display device 8260 may include a display, holographic device, or projector, and control circuitry for controlling the corresponding device. Display device 8260 may include a display device according to one or more embodiments. Display device 8260 may include touch circuitry configured to sense touch and / or sensor circuitry (pressure sensor, etc.) configured to measure the intensity of the force generated by touch.

[0133] Audio module 8270 can convert sound into electrical signals, or vice versa. Audio module 8270 can acquire sound through input device 8250, or output sound through sound output device 8255 and / or through a speaker and / or headphones of another electronic device (e.g., electronic device 8202, etc.) directly or wirelessly connected to electronic device 8201.

[0134] Sensor module 8276 can detect the operating state (power, temperature, etc.) or external environmental state (user state, etc.) of electronic device 8201, and generate electrical signals and / or data values ​​corresponding to the sensed state. Sensor module 8276 may include gesture sensors, gyroscope sensors, atmospheric pressure sensors, magnetic sensors, accelerometers, grip sensors, proximity sensors, color sensors, infrared (IR) sensors, biometric sensors, temperature sensors, humidity sensors, and / or illuminance sensors.

[0135] Interface 8277 may support one or more specified protocols that can be used to enable electronic device 8201 to connect directly or wirelessly to other electronic devices (e.g., electronic device 8202, etc.). Interface 8277 may include a High Definition Multimedia Interface (HDMI), a Universal Serial Bus (USB) interface, an SD card interface, and / or an audio interface.

[0136] Connection end 8278 may include a connector through which electronic device 8201 can be physically connected to another electronic device (e.g., electronic device 8202, etc.). Connection end 8278 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (such as a headphone connector, etc.).

[0137] The haptic module 8279 can convert electrical signals into mechanical stimuli (vibration, motion, etc.) or electrical stimuli that can be recognized by the user through touch or kinesthesia. The haptic module 8279 may include a motor, a piezoelectric element, and / or an electrical stimulator.

[0138] Camera module 8280 can capture still images and moving images. Camera module 8280 may include a lens assembly, which includes one or more lenses, an image sensor, an image signal processor, and / or a flash. The lens assembly included in camera module 8280 can converge light emitted from the object to be photographed.

[0139] The power management module 8288 can manage the power supply to the electronic device 8201. The power management module 8288 can be implemented as part of a power management integrated circuit (PMIC).

[0140] Battery 8289 can supply power to components of electronic device 8201. Battery 8289 may include non-rechargeable primary batteries, rechargeable rechargeable batteries, and / or fuel cells.

[0141] Communication module 8290 can establish direct (wired) communication channels and / or wireless communication channels between electronic device 8201 and other electronic devices (electronic device 8202, electronic device 8204, server 8208, etc.), and support communication execution through the established communication channels. Communication module 8290 may include one or more communication processors operating independently of processor 8220 (application processor, etc.) and support direct and / or wireless communication. Communication module 8290 may include wireless communication module 8292 (cellular communication module, short-range wireless communication module, Global Navigation Satellite System (GNSS), etc.) and / or wired communication module 8294 (local area network (LAN) communication module, power line communication module, etc.). The corresponding communication modules among these communication modules can communicate with other electronic devices through a first network 8298 (a short-range communication network such as Bluetooth, WiFi Direct, or Infrared Data Association (IrDA)) or a second network 8299 (a long-range communication network such as a cellular network, the Internet, or computer network (LAN, WAN, etc.). These various types of communication modules can be integrated into a single component (such as a single chip) or implemented as multiple separate components (multiple chips). The wireless communication module 8292 can use user information (such as the International Mobile Subscriber Identity (IMSI) stored in the subscriber identification module 8296) to identify and authenticate electronic devices 8201 in communication networks (such as the first network 8298 and / or the second network 8299).

[0142] Antenna module 8297 can transmit signals and / or power to or from external sources (such as other electronic devices). The antenna may include a radiator formed by conductive patterns formed on a substrate (such as a printed circuit board (PCB)). Antenna module 8297 may include one or more antennas. When multiple antennas are included, communication module 8290 can select an antenna suitable for a communication scheme used in a communication network (such as a first network 8298 and / or a second network 8299). Signals and / or power can be transmitted or received between communication module 8290 and other electronic devices via the selected antenna. Additional components besides the antenna (such as radio frequency integrated circuits (RFICs)) may be included as part of antenna module 8297.

[0143] Some components can be connected to each other via peripheral communication methods such as bus, general purpose input / output (GPIO), serial peripheral interface (SPI) and mobile industrial processor interface (MIPI) to exchange signals (commands, data, etc.).

[0144] Commands or data can be sent or received between electronic device 8201 and external electronic device 8204 via server 8208 connected to the second network 8299. Other electronic devices 8202 and 8204 can be the same as or different types of devices than electronic device 8201. All or some operations performed in electronic device 8201 can be performed in one or more of the other electronic devices 8202, 8204, and 8208. For example, when electronic device 8201 needs to perform a function or service, it can request one or more other electronic devices to perform part or all of the function or service, instead of performing it itself. One or more other electronic devices receiving the request can perform additional functions or services related to the request and send the execution results to electronic device 8201. For this purpose, cloud computing, distributed computing, and / or client-server computing technologies can be used.

[0145] Figure 27 This figure illustrates an example of a miniature light-emitting display device according to one or more embodiments applied to a mobile device. The mobile device 9100 may include a display device 9110, and the display device 9110 may include a display device according to one or more embodiments. The display device 9110 may have a foldable structure, for example, a multi-fold structure.

[0146] Figure 28 This is a diagram illustrating an example of a miniature light-emitting display device applied to a vehicle display device according to one or more embodiments. The display device may be a head-up display device 9200 for a vehicle, and may include a display 9210 provided in a region of the vehicle and a light path changing member 9220 that converts the light path so that the driver can see the image generated by the display 9210.

[0147] Figure 29 This figure illustrates an example of a miniature light-emitting display device according to one or more embodiments applied to augmented reality glasses. Each pair of augmented reality glasses 9300 may include a projection system 9310 for forming an image and a waveguide 9320 for guiding the image from the projection system 930 into the user's eyes. The projection system 9310 may include a display device according to one or more embodiments. The waveguide 9320 may be provided, for example, in an eyeglass frame.

[0148] Figure 30This figure illustrates an example of a miniature light-emitting display device applied to a sign according to one or more embodiments. The sign 9400 can be used for outdoor advertising using a digital information display, and the advertising content can be controlled via a communication network. The sign 9400 can be implemented using, for example, the electronic devices described herein.

[0149] Figure 31 This figure illustrates an example of a miniature light-emitting display device according to one or more embodiments applied to a wearable display. The wearable display 9500 may include a display device according to one or more embodiments, and can be referenced... Figure 26 The electronic device described is used to achieve this.

[0150] Display devices according to one or more embodiments can be applied to a variety of products such as rollable televisions (TVs) and stretchable displays.

[0151] One or more embodiments can realize a display device that displays high-resolution color images using miniature light-emitting devices. The display device according to one or more embodiments may include a vertically stacked structure of epitaxial structures and an anti-reflective layer provided on the vertically stacked structure to improve the transmission efficiency of each color of light.

[0152] In a method of manufacturing a display device according to one or more embodiments, the epitaxial structure may be formed monolithically in the vertical direction, and the antireflective layer may be stacked on the vertically stacked structure.

[0153] It should be understood that the embodiments described herein are to be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects in each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope defined by the appended claims.

[0154] This application is based on and claims priority to Korean Patent Application No. 10-2024-0189076, filed on December 17, 2024, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. A display device, comprising: Backplane substrate, including at least one driving device; At least one pixel includes a first epitaxial structure, a second epitaxial structure, and a third epitaxial structure sequentially stacked on the backplane substrate; The lens is located on the third extensional structure. as well as An anti-reflective layer is located between the third epitaxial structure and the lens. Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The first epitaxial structure is configured to emit light of a first wavelength. The second epitaxial structure is configured to emit light of a second wavelength. The third epitaxial structure is configured to emit light of a third wavelength. The anti-reflective layer comprises a material having a refractive index in the range of 1.7 to 2.1, and The antireflective layer has a thickness in the range of 75 nm to 110 nm.

2. The display device according to claim 1, wherein the first wavelength light includes red wavelength light, the second wavelength light includes green wavelength light, and the third wavelength light includes blue wavelength light.

3. The display device according to claim 1, further comprising a reflective layer between the backplate substrate and the first epitaxial structure.

4. The display device according to claim 1, further comprising: The first p-type electrode, the second p-type electrode, and the third p-type electrode are laterally spaced between the backplate substrate and the first epitaxial structure. An n-type electrode is located between the third epitaxial structure and the antireflective layer.

5. The display device according to claim 1, wherein the at least one pixel comprises a plurality of pixels, and The anti-reflective layer is shared by the multiple pixels as a single entity.

6. The display device according to claim 1, wherein the at least one pixel comprises a plurality of pixels, and The anti-reflective layer comprises multiple anti-reflective layer portions, each of which corresponds to one of the multiple pixels.

7. The display device according to claim 1, wherein the refractive index of the second conductivity type semiconductor layer in the third epitaxial structure is n1, the refractive index of the antireflective layer is n2, and the refractive index of the lens is n3, and Where n1 > n2 > n3.

8. A display device, comprising: Backplane substrate, including at least one driving device; The first epitaxial structure, the second epitaxial structure, and the third epitaxial structure are sequentially stacked on the backplate substrate; The lens is located on the third extensional structure. A first anti-reflective layer is provided on the third epitaxial structure; as well as A second anti-reflective layer is located between the first anti-reflective layer and the lens. Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The first epitaxial structure is configured to emit light of a first wavelength. The second epitaxial structure is configured to emit light of a second wavelength. The third epitaxial structure is configured to emit light of a third wavelength. The first antireflective layer has a first refractive index, and the second antireflective layer has a second refractive index that is less than the first refractive index. Each of the first antireflective layer and the second antireflective layer has a thickness greater than 0 nm and less than or equal to 200 nm.

9. The display device according to claim 8, wherein the first wavelength light includes red wavelength light, the second wavelength light includes green wavelength light, and the third wavelength light includes blue wavelength light.

10. The display device according to claim 8, further comprising a reflective layer between the backplate substrate and the first epitaxial structure.

11. The display device of claim 8, wherein the first refractive index is 1.9 or greater, and the second refractive index is 1.9 or less.

12. The display device according to claim 8, wherein the refractive index of the second conductivity type semiconductor layer in the third epitaxial structure is n1, the first refractive index is n21, the second refractive index is n22, and the refractive index of the lens is n3, and Where n1 > n21 > n22 > n3.

13. A method of manufacturing a display device, the method comprising: A third epitaxial structure is formed on the substrate; A second epitaxial structure is formed on the third epitaxial structure; A first epitaxial structure is formed on the upper portion of the second epitaxial structure to prepare a vertically stacked structure; Forming a backplate substrate; The vertical stacked structure is combined with the backplate substrate such that the first epitaxial structure faces the backplate substrate; Remove the substrate; An anti-reflection layer is formed on the third epitaxial structure; as well as A lens is formed on the anti-reflective layer. Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The anti-reflective layer comprises a material having a refractive index in the range of 1.7 to 2.1, and The antireflective layer has a thickness in the range of 75 nm to 110 nm.

14. The method of claim 13, wherein the first epitaxial structure is configured to emit red wavelength light, the second epitaxial structure is configured to emit green wavelength light, and the third epitaxial structure is configured to emit blue wavelength light.

15. The method of claim 13, further comprising: A first p-type electrode, a second p-type electrode, and a third p-type electrode, laterally spaced apart from each other, are formed between the backplate substrate and the first epitaxial structure. An n-type electrode is formed between the third epitaxial structure and the antireflective layer.

16. The method of claim 13, wherein the refractive index of the second conductivity type semiconductor layer in the third epitaxial structure is n1, the refractive index of the antireflective layer is n2, and the refractive index of the lens is n3, and Where n1 > n2 > n3.

17. An electronic device comprising: A display device configured to form an image; Waveguides, configured to guide the image to the user's eyes, The display device includes: Backplane substrate, including at least one driving device; The first epitaxial structure, the second epitaxial structure, and the third epitaxial structure are sequentially stacked on the backplate substrate; Lens, on the third extensional structure; and An anti-reflective layer is located between the third epitaxial structure and the lens. Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The first epitaxial structure is configured to emit light of a first wavelength. The second epitaxial structure is configured to emit light of a second wavelength. The third epitaxial structure is configured to emit light of a third wavelength. The anti-reflective layer comprises a material having a refractive index in the range of 1.7 to 2.1, and The antireflective layer has a thickness in the range of 75 nm to 110 nm.

18. The electronic device of claim 17, wherein the first wavelength light comprises red wavelength light, the second wavelength light comprises green wavelength light, and the third wavelength light comprises blue wavelength light.

19. The electronic device of claim 17, further comprising: The first p-type electrode, the second p-type electrode, and the third p-type electrode are laterally spaced between the backplate substrate and the first epitaxial structure. An n-type electrode is located between the third epitaxial structure and the antireflective layer.

20. The electronic device of claim 17, wherein the refractive index of the second conductivity type semiconductor layer in the third epitaxial structure is n1, the refractive index of the antireflective layer is n2, and the refractive index of the lens is n3, and Where n1 > n2 > n3.

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