Composite materials, thin films, optoelectronic devices and display devices

Abstract

The application discloses a composite material, a film, a photoelectric device and a display device, and the composite material comprises a semiconductor material and a carbonyl thiourea compound. The composite material has high stability.

Description

Technical Field

[0001] This application relates to the field of optoelectronic device technology, and in particular to a composite material, a thin film, an optoelectronic device, and a display device. Background Technology

[0002] In semiconductor materials, inorganic particles have excellent optical and / or electrical properties and are widely used in optoelectronic devices.

[0003] The stability of existing semiconductor materials needs to be further improved. Summary of the Invention

[0004] In view of this, this application provides a composite material, a thin film, an optoelectronic device, and a display device.

[0005] The embodiments of this application are implemented as follows: This application provides a composite material, including a semiconductor material and a carbonyl thiourea compound.

[0006] Accordingly, embodiments of this application also provide a thin film comprising the aforementioned composite material.

[0007] Accordingly, embodiments of this application also provide an optoelectronic device, including a stacked anode, a functional layer, and a cathode, wherein the functional layer includes one or more sub-functional layers, wherein...

[0008] In the one or more sub-functional layers, at least one sub-functional layer includes the composite material; and / or

[0009] The optoelectronic device further includes at least one interface layer, wherein the interface layer is disposed between the anode and the functional layer, and / or between the cathode and the functional layer, and / or between at least one group of adjacent sub-functional layers, and the material of the interface layer includes carbonyl thiourea compounds in the composite material.

[0010] Accordingly, this application also provides a display device, which includes the above-mentioned optoelectronic device.

[0011] The composite material described in this application has high stability. Attached Figure Description

[0012] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0013] Figure 1This is a flowchart illustrating a method for preparing a composite material according to an embodiment of this application;

[0014] Figure 2 This is a schematic diagram of the structure of an optoelectronic device provided in an embodiment of this application;

[0015] Figure 3 This is a schematic diagram of another optoelectronic device provided in an embodiment of this application;

[0016] Figure 4 This is a flowchart of a method for fabricating an optoelectronic device provided in an embodiment of this application.

[0017] Figure label:

[0018] Optoelectronic device 100; anode 10; functional layer 101; cathode 20; electron injection layer 30; electron transport layer 40; light-emitting layer 50; hole transport layer 60; hole injection layer 70; interface layer 102. Detailed Implementation

[0019] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0020] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0021] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0022] In this application, "at least one" means one or more, and "more than one" means two or more. "One or more", "at least one of the following", or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0023] In this application, the term "on" forming another layer on a certain layer is a broad concept. It can mean that the formed other layer is adjacent to a certain layer, or it can mean that there are other spacer structures between the other layer and the certain layer. For example, when a second electrode is formed "on" a first charge carrier functional layer, the term "on" can mean that the formed second electrode is adjacent to the first charge carrier functional layer, or it can mean that there are other spacer structures between the second electrode and the first charge carrier functional layer, such as a light-emitting layer.

[0024] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0025] In this application, "substitution" means that the hydrogen atom in the substituent is replaced by the substituent.

[0026] In this application, when no linking site is specified in the group, it means that any linkable site in the group is selected as the linking site.

[0027] In this application, when the same substituent appears multiple times, it can be independently selected from different groups. If the general formula contains multiple R1s, then R1s can be independently selected from different groups.

[0028] In this application, "substituted or unsubstituted" means that the defined group may or may not be substituted. When the defined group is substituted, it should be understood that the defined group can be substituted by one or more substituents R, wherein R is selected from, but is not limited to: deuterium, cyano, isocyano, nitro or halogen, C1-30 alkyl, heterocyclic group containing 3-20 ring atoms, aromatic group containing 6-20 ring atoms, heteroaromatic group containing 5-20 ring atoms, -NR'R", silyl, carbonyl, alkoxycarbonyl, aryloxycarbonyl, carbamoyl, halocarbamoyl, etc. Formyl, isocyanate, thiocyanate, isothiocyanate, hydroxyl, trifluoromethyl, and the above groups may be further substituted with substituents acceptable in the art; it is understood that R' and R" in -NR'R" are independently selected from, but not limited to: H, deuterium, cyano, isocyano, nitro or halogen, C1-10 alkyl, heterocyclic group containing 3-20 ring atoms, aromatic group containing 6-20 ring atoms, and heteroaromatic group containing 5-20 ring atoms.

[0029] In this application, "ring atom number" refers to the number of atoms in the ring itself of a structural compound (e.g., a monocyclic compound, a fused-ring compound, a cross-linked compound, a carbocyclic compound, or a heterocyclic compound) obtained by atomic bonding to form a ring. When the ring is substituted by a substituent, the atoms contained in the substituent are not included in the ring-forming atoms. The same applies to the "ring atom number" described below unless otherwise specified. For example, a benzene ring has 6 ring atoms, a naphthalene ring has 10 ring atoms, and a thiophene group has 5 ring atoms.

[0030] In this application, "aryl or aromatic group" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing one hydrogen atom. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl. For polycyclic rings, at least one is an aromatic ring system. For example, "substituted or unsubstituted aryl having 6 to 40 ring atoms" refers to an aryl containing 6 to 40 ring atoms, preferably a substituted or unsubstituted aryl having 6 to 30 ring atoms, more preferably a substituted or unsubstituted aryl having 6 to 18 ring atoms, and particularly preferably a substituted or unsubstituted aryl having 6 to 14 ring atoms, and optionally further substituted on the aryl group; suitable examples include, but are not limited to: phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthrene, fluoranyl, triphenylene, pyrene, perylene, tetraphenyl, fluorenyl, dinaphthylphenyl, acenaphthyl and their derivatives. Understandably, multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, and diaryl ether systems should also be included in the definition of aryl.

[0031] In this application, "heteroaryl or heteroaromatic group" refers to an aryl group in which at least one carbon atom is replaced by a non-carbon atom, which can be an N atom, O atom, S atom, etc. For example, "substituted or unsubstituted heteroaryl group having 5 to 40 ring atoms" refers to a heteroaryl group having 5 to 40 ring atoms, preferably a substituted or unsubstituted heteroaryl group having 6 to 30 ring atoms, more preferably a substituted or unsubstituted heteroaryl group having 6 to 18 ring atoms, and particularly preferably a substituted or unsubstituted heteroaryl group having 6 to 14 ring atoms. The heteroaryl group may optionally be further substituted, and suitable examples include, but are not limited to: thiophene, furanyl, pyrroleyl, imidazole, triazolyl, imidazoleyl, diazolyl, triazolyl, pyridyl, bipyridyl, pyrimidinyl, triazinyl, acridineyl, pyridazinyl, etc. Azinyl, quinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridinylpyrimidinyl, pyridinylpyrazinyl, pyrazinylpyrazinyl, isoquinolinyl, indolyl, carbazoleyl, benzothiopheneyl, benzofuranyl, indolyl, carbazoleyl, pyrroloimidazolyl, pyrrolopyrrololyl, thienopyrrololyl, thienopyrrololyl, furanolol, furanol, thienofuranyl, benzoisoxazolyl, benzoisothiazolyl, benzoimidazolyl, quinolinyl, isoquinolinyl, o-diazonaphthyl, quinoxalinyl, phenanthridine, primidyl, quinazolinyl, quinazolinone, dibenzothiopheneyl, dibenzofuranyl, carbazoleyl and their derivatives.

[0032] In this application, "alkyl" can mean straight-chain, branched, or cyclic alkyl. The number of carbon atoms in an alkyl group can be 1 to 50, 1 to 30, 1 to 20, 1 to 10, or 1 to 6. Phrases containing this term, such as "C1-9 alkyl," refer to alkyl groups containing 1 to 9 carbon atoms, and each time it appears, it can independently be C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, or C9 alkyl. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl, 3,7-dimethyloctyl, n-nonyl, n-decyl, adamantyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl The compounds include: n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecanyl, n-hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, n-heptadecyl, n-octadecyl, n-heptadecyl, n-eicosyl, 2-ethyleicosyl, 2-butyleicosyl, 2-hexyleicosyl, 2-octyleicosyl, n-monodecyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, and adamantane.

[0033] In this application, "alkoxy" refers to a group with the structure "-O-alkyl", that is, an alkyl group as defined above that is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to: methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), and tert-butoxy (-OC(CH3)3 or -OtBu).

[0034] In this application, "alkyl carbonyl" refers to a structure with the following structure: The group, "alkoxycarbonyl", refers to the structure with The group. Wherein, R represents an alkyl group, C1 to C2. 30 C1 to C1 of alkyl carbonyl groups 30 The number of carbon atoms in the entire group.

[0035] In this application, "aryloxy group" refers to a group with the structure "-O-aryl", that is, an aryl group as defined above that is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to, phenoxy, naphthoxy, etc.

[0036] In this application, halogenated aryl refers to an aryl group that is attached to a halogen.

[0037] It should be noted that the thickness of the film in this application was measured using a step tester, and the average particle size in this application was measured using a transmission electron microscope (TEM).

[0038] The technical solution of this application is as follows:

[0039] In a first aspect, embodiments of this application provide a composite material, which includes a semiconductor material and a carbonyl thiourea compound.

[0040] It should be noted that, in this application, the carbonyl thiourea compounds refer to thiourea compounds having a carbonyl group.

[0041] The semiconductor material includes one or more of quantum dots, N-type semiconductor materials, and P-type semiconductor materials. Specifically, the N-type semiconductor material includes one or more of N-type inorganic particles and N-type organic semiconductor materials, and the P-type semiconductor material includes one or more of P-type inorganic particles and P-type organic semiconductor materials.

[0042] It is understood that the quantum dots, N-type inorganic particles, and P-type inorganic particles are inorganic semiconductor materials, while the N-type organic semiconductor material and the P-type organic semiconductor material are organic semiconductor materials.

[0043] It should be noted that the semiconductor material refers to a material with semiconductor properties, that is, a material whose conductivity is between that of a metal and an insulator. Furthermore, the inorganic semiconductor material refers to an inorganic material with semiconductor properties, the organic semiconductor material refers to an organic material with semiconductor properties, the N-type organic semiconductor material refers to an N-type organic material with semiconductor properties, and the P-type organic semiconductor material refers to a P-type organic material with semiconductor properties.

[0044] The resistivity of the semiconductor material is 1 mΩ·cm to 1 GΩ·cm.

[0045] The composite material described in this application includes the semiconductor material and the carbonyl thiourea compound. The carbonyl thiourea compound can effectively modify and / or passivate the semiconductor material, thereby improving its stability. Specifically, when the semiconductor material is the quantum dot, the N-type inorganic particle, or the P-type inorganic particle, i.e., when the semiconductor material is an inorganic semiconductor material, the carbonyl thiourea compound contains both carbonyl and thiourea groups. The nitrogen-hydrogen bond in the thiourea group can activate the portion of the carbon-oxygen double bond near the oxygen atom in the carbonyl group. This facilitates the formation of hydrogen bond interactions between the carbonyl and thiourea groups, increasing the binding energy of the carbonyl and thiourea groups in the carbonyl thiourea compound, thereby promoting passivation strength and effectively passivating defects in the inorganic semiconductor material, such as hole defects (e.g., oxygen hole defects) and interstitial defects, reducing the surface area of ​​the inorganic semiconductor material. The surface defect density is increased, thereby improving the stability, carrier transport performance, and / or fluorescence quantum yield (PLQY) of the inorganic semiconductor material, thus giving the composite material higher stability, higher carrier transport performance, and / or higher fluorescence quantum yield (PLQY). When the semiconductor material is an N-type organic semiconductor material or a P-type organic semiconductor material, i.e., when the semiconductor material is an organic semiconductor material, the carbonyl thiourea compound can effectively promote the cross-linking of organic molecules in the organic semiconductor material when using the composite material to prepare a thin film, thereby effectively improving the stability and carrier transport performance of the composite material. In addition, when the semiconductor material is an organic semiconductor material, during the film formation process using the composite material, the carbonyl thiourea compound can be bound to the surface and interior of the organic molecules through electrostatic interactions, and the carbonyl groups and thiourea between carbonyl thiourea compound molecules can attract each other through hydrogen bonding interactions, causing the carbonyl thiourea compound molecules to bond and cross-link into a more stable network structure, thereby effectively improving the film quality, reducing the surface roughness of the film, and thus improving the stability and carrier transport performance of the film.

[0046] In some embodiments, when the semiconductor material is the inorganic semiconductor material, the carbonyl thiourea compound is coordinated with the inorganic semiconductor material.

[0047] In some embodiments, when the semiconductor material is the organic semiconductor material, the carbonyl thiourea compound is bound to the surface and / or interior of the organic molecules of the organic semiconductor material through electrostatic interactions.

[0048] In some embodiments, the carbonyl thiourea compound has the structural formula shown in formula (I):

[0049]

[0050] Among them, R1, R2, and R3 are each independently selected from, but not limited to, H, D, substituted or unsubstituted C1 to C2. 20 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 20 Alkenyl, substituted or unsubstituted C2-C 20 Alkyne group, substituted or unsubstituted C1-C 20 Alkyl carbonyl, substituted or unsubstituted C1-C 20 The group comprises an alkoxycarbonyl group, an aromatic group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 60 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 60 substituted or unsubstituted ring atoms, or a combination of these groups; wherein at least one of R1, R2, and R3 is H.

[0051] R4 is selected from, but is not limited to, substituted or unsubstituted C1 to C2. 20 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 20 Alkenyl, substituted or unsubstituted C2-C 20 Alkyne group, substituted or unsubstituted C1-C 20 Alkyl carbonyl, substituted or unsubstituted C1-C 20 Alkoxycarbonyl, an aromatic group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 60 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 60 substituted or unsubstituted ring atoms, or a combination of these groups;

[0052] L is a linking group, which can be selected from, but is not limited to, single bonds, substituted or unsubstituted C1 to C2 bonds. 20 Alkylene, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 alkyne group, substituted or unsubstituted C2-C 20 Etheryl group, substituted or unsubstituted aryl group with 6 to 20 ring atoms, substituted or unsubstituted aryloxy group with 6 to 20 ring atoms, substituted or unsubstituted arylthio group with 6 to 20 ring atoms, substituted or unsubstituted -(CH2) m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 NHCO(CH2) m4 -, substituted or unsubstituted -(CH2) m5 COO(CH2) m6 - is one or more combinations of two or more, wherein m1 to m6 are each independently selected from integers from 1 to 20.

[0053] Among them, -(CH2) m1 CO(CH2) m2 The structural formula for - is:

[0054]

[0055] Among them, -(CH2) m3 NHCO(CH2) m4 The structural formula for - is:

[0056]

[0057] Among them, -(CH2) m5 COO(CH2) m6 The structural formula for - is:

[0058]

[0059] In some embodiments, the carbonyl thiourea compound has the structural formulas shown in formulas (I-1) and (I-2):

[0060]

[0061] Wherein, L and R4 are as described above;

[0062] R5 is selected from, but is not limited to, substituted or unsubstituted C1 to C2. 20 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 20 Alkenyl, substituted or unsubstituted C2-C 20 Alkyne group, substituted or unsubstituted C1-C 20 Alkyl carbonyl, substituted or unsubstituted C1-C 20 Alkoxycarbonyl, an aromatic group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 60 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 60 substituted or unsubstituted ring atoms, or a combination of these groups;

[0063] L' is a linking group, which can be selected from, but is not limited to, single bonds, substituted or unsubstituted C1 to C2 bonds. 20 Alkylene, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 alkyne group, substituted or unsubstituted C2-C 20Etheryl group, substituted or unsubstituted aryl group with 6 to 20 ring atoms, substituted or unsubstituted aryloxy group with 6 to 20 ring atoms, substituted or unsubstituted arylthio group with 6 to 20 ring atoms, substituted or unsubstituted -(CH2) m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 NHCO(CH2) m4 -, substituted or unsubstituted -(CH2) m5 COO(CH2) m6 - is one or more combinations of two or more, wherein m1 to m6 are each independently selected from integers from 1 to 20.

[0064] In some embodiments, in R1, R2, R3, R4, R5, L, L', the substituents are each independently including, but not limited to, halogens, hydroxyl groups, nitro groups, silyl groups, and C1-C2 groups. 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 One or more of the following: alkylthio, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, and arylthio with 6 to 60 ring atoms.

[0065] Carbonyl thiourea compounds having the structural formulas shown in formulas (I-1) and (I-2) can more effectively passivate defects in the inorganic semiconductor material, more effectively reduce the surface defect density of the inorganic semiconductor material, and thus more effectively improve the stability, carrier transport performance and / or fluorescence quantum yield of the inorganic semiconductor material.

[0066] Carbonyl thiourea compounds having the structural formulas shown in formulas (I-1) and (I-2) can more effectively promote the cross-linking of organic molecules in the organic semiconductor material, thereby more effectively improving the stability and carrier transport performance of the composite material. Furthermore, when the semiconductor material is an organic semiconductor material, the film quality can be more effectively improved and the surface roughness of the film can be more effectively reduced when using the composite material to prepare a thin film, thereby more effectively enhancing the stability and carrier transport performance of the thin film.

[0067] In some embodiments, R1, R2, and R3 are each independently selected from, but not limited to, H, D, substituted or unsubstituted C1 to C2. 15 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 15 Alkenyl, substituted or unsubstituted C2-C 15 Alkyne group, substituted or unsubstituted C1-C 15 Alkyl carbonyl, substituted or unsubstituted C1-C 15The group comprises an alkoxycarbonyl group, an aromatic group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 30 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 30 substituted or unsubstituted ring atoms, or a combination of these groups; wherein at least one of R1, R2, and R3 is H.

[0068] Furthermore, in some embodiments, R1, R2, and R3 are each independently selected from, but not limited to, H, D, substituted or unsubstituted C1 to C2. 10 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 10 Alkenyl, substituted or unsubstituted C2-C 10 Alkyne group, substituted or unsubstituted C1-C 10 Alkyl carbonyl, substituted or unsubstituted C1-C 10 The group comprises an alkoxycarbonyl group, an aromatic group having 6 to 20 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 20 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 20 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 20 substituted or unsubstituted ring atoms, or a combination of these groups; wherein at least one of R1, R2, and R3 is H.

[0069] Furthermore, in some embodiments, R1, R2, and R3 are each independently selected from, but not limited to, H, D, substituted or unsubstituted C1-C8 alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C8 alkenyl, substituted or unsubstituted C2-C8 alkynyl, substituted or unsubstituted C1-C8 alkyl carbonyl, substituted or unsubstituted C1-C8 alkoxy carbonyl, substituted or unsubstituted aromatic groups having 6 to 15 ring atoms, substituted or unsubstituted heteroaromatic groups having 5 to 15 ring atoms, substituted or unsubstituted aryloxy groups having 6 to 15 ring atoms, substituted or unsubstituted heteroaryloxy groups having 5 to 15 ring atoms, or combinations of these groups; wherein at least one of R1, R2, and R3 is H.

[0070] Furthermore, in some embodiments, R1, R2, and R3 are each independently selected from, but not limited to, H, D, substituted or unsubstituted C1-C8 alkyl, -CF3, substituted or unsubstituted C2-C6 alkenyl, substituted or unsubstituted C2-C6 alkynyl, substituted or unsubstituted C1-C6 alkyl carbonyl, substituted or unsubstituted C1-C6 alkoxy carbonyl, substituted or unsubstituted aromatic groups having 6 to 12 ring atoms, substituted or unsubstituted heteroaromatic groups having 5 to 12 ring atoms, substituted or unsubstituted aryloxy groups having 6 to 12 ring atoms, substituted or unsubstituted heteroaryloxy groups having 5 to 12 ring atoms, or combinations of these groups; wherein at least one of R1, R2, and R3 is H.

[0071] In some embodiments, R4 and R5 are each independently selected from, but not limited to, substituted or unsubstituted C1 to C2. 15 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 15 Alkenyl, substituted or unsubstituted C2-C 15 Alkyne group, substituted or unsubstituted C1-C 15 Alkyl carbonyl, substituted or unsubstituted C1-C 15 Alkoxycarbonyl, an aromatic group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 30 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 30 substituted or unsubstituted ring atoms, or a combination of these groups.

[0072] Furthermore, in some embodiments, R4 and R5 are each independently selected from, but not limited to, substituted or unsubstituted C1 to C2. 10 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 10 Alkenyl, substituted or unsubstituted C2-C 10 Alkyne group, substituted or unsubstituted C1-C 10 Alkyl carbonyl, substituted or unsubstituted C1-C 10 Alkoxycarbonyl, an aromatic group having 6 to 20 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 20 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 20 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 20 substituted or unsubstituted ring atoms, or a combination of these groups.

[0073] Furthermore, in some embodiments, R4 and R5 are each independently selected from, but not limited to, substituted or unsubstituted C1-C8 alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C8 alkenyl, substituted or unsubstituted C2-C8 alkynyl, substituted or unsubstituted C1-C8 alkyl carbonyl, substituted or unsubstituted C1-C8 alkoxy carbonyl, substituted or unsubstituted aromatic groups having 6 to 15 ring atoms, substituted or unsubstituted heteroaromatic groups having 5 to 15 ring atoms, substituted or unsubstituted aryloxy groups having 6 to 15 ring atoms, substituted or unsubstituted heteroaryloxy groups having 5 to 15 ring atoms, or combinations of these groups.

[0074] Furthermore, in some embodiments, R4 and R5 are each independently selected from, but not limited to, substituted or unsubstituted C1-C6 alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C6 alkenyl, substituted or unsubstituted C2-C6 alkynyl, substituted or unsubstituted C1-C6 alkyl carbonyl, substituted or unsubstituted C1-C6 alkoxy carbonyl, substituted or unsubstituted aromatic groups having 6 to 12 ring atoms, substituted or unsubstituted heteroaromatic groups having 5 to 12 ring atoms, substituted or unsubstituted aryloxy groups having 6 to 12 ring atoms, substituted or unsubstituted heteroaryloxy groups having 5 to 12 ring atoms, or combinations of these groups.

[0075] In some embodiments, L and L' may be selected from, but are not limited to, single-bonded, substituted, or unsubstituted C1 to C2 bonds. 15 Alkylene, substituted or unsubstituted C2-C 15 alkenyl, substituted or unsubstituted C2-C 15 alkyne group, substituted or unsubstituted C2-C 15 Etheryl group, substituted or unsubstituted aryl group with 6 to 15 ring atoms, substituted or unsubstituted aryloxy group with 6 to 15 ring atoms, substituted or unsubstituted arylthio group with 6 to 15 ring atoms, substituted or unsubstituted -(CH2) m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 NHCO(CH2) m4 -, substituted or unsubstituted -(CH2) m5 COO(CH2) m6 - is one or more combinations of two or more, wherein m1 to m6 are each independently selected from integers from 1 to 15.

[0076] Furthermore, in some embodiments, L and L' may be selected from, but are not limited to, single bonds, substituted or unsubstituted C1 to C2 bonds. 10 Alkylene, substituted or unsubstituted C2-C 10alkenyl, substituted or unsubstituted C2-C 10 alkyne group, substituted or unsubstituted C2-C 10 Etheryl group, substituted or unsubstituted aryl group with 6 to 12 ring atoms, substituted or unsubstituted aryloxy group with 6 to 12 ring atoms, substituted or unsubstituted arylthio group with 6 to 12 ring atoms, substituted or unsubstituted -(CH2) m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 NHCO(CH2) m4 -, substituted or unsubstituted -(CH2) m5 COO(CH2) m6 - is one or more combinations of two or more, wherein m1 to m6 are each independently selected from integers from 1 to 10.

[0077] Furthermore, in some embodiments, L and L' may be selected from, but are not limited to, single bonds, substituted or unsubstituted C1-C8 alkylene groups, substituted or unsubstituted C2-C8 alkenyl groups, substituted or unsubstituted C2-C8 alkynyl groups, substituted or unsubstituted C2-C8 etheryl groups, substituted or unsubstituted aryl groups with 6-10 ring atoms, substituted or unsubstituted aryloxy groups with 6-10 ring atoms, substituted or unsubstituted arylthio groups with 6-10 ring atoms, and substituted or unsubstituted -(CH2) groups. m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 NHCO(CH2) m4 -, substituted or unsubstituted -(CH2) m5 COO(CH2) m6 - is one or more combinations of two or more, wherein m1 to m6 are each independently selected from integers from 1 to 6.

[0078] In some embodiments, in R1, R2, R3, R4, R5, L, L', the substituents are each independently including, but not limited to, halogens, hydroxyl groups, nitro groups, silyl groups, and C1-C2 groups. 15 Alkyl, C1-C 15 Alkoxy, C1-C 15 One or more of the following: alkylthio, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, and arylthio with 6 to 30 ring atoms.

[0079] In some embodiments, in R1, R2, R3, R4, R5, L, L', the substituents are each independently including, but not limited to, halogens, hydroxyl groups, nitro groups, silyl groups, and C1-C2 groups. 10 Alkyl, C1-C 10 Alkoxy, C1-C10 One or more of the following: alkylthio, aryl with 6 to 20 ring atoms, aryloxy with 6 to 20 ring atoms, and arylthio with 6 to 20 ring atoms.

[0080] In some embodiments, in R1, R2, R3, R4, R5, L, L', the substituents of the substitutions are each independently including, but not limited to, one or more of halogens, hydroxyl groups, nitro groups, silyl groups, C1-C5 alkyl groups, C1-C5 alkoxy groups, C1-C5 alkylthio groups, aryl groups with 6 to 12 ring atoms, aryloxy groups with 6 to 12 ring atoms, and arylthio groups with 6 to 12 ring atoms.

[0081] As an example, in some embodiments, the carbonyl thiourea compound may be selected from, but is not limited to, one or more of 2-isopropylcarbonyl thiourea (CAS: 6965-58-8), 1-(4-ethoxycarbonylphenyl)-2-thiourea (CAS: 23051-16-3), 1,3-bis(tert-butoxycarbonyl)thiourea (CAS: 145013-05-4), and 1-(3-ethoxycarbonylphenyl)-2-thiourea (CAS: 20967-87-7). The carbonyl thiourea compound can more effectively passivate defects in the inorganic semiconductor material, more effectively reduce the surface defect density of the inorganic semiconductor material, thereby more effectively improving the stability, carrier transport performance, and / or fluorescence quantum yield of the inorganic semiconductor material. Furthermore, the carbonyl thiourea compound can also more effectively promote the crosslinking of organic molecules in the organic semiconductor material, thereby more effectively improving the stability and carrier transport performance of the composite material. Furthermore, when the semiconductor material is an organic semiconductor material, the film quality can be improved more effectively and the surface roughness of the film can be reduced more effectively when the composite material is used to prepare the film, thereby improving the stability and carrier transport performance of the film more effectively.

[0082] The structural formula of the 2-isopropylcarbonylthiourea is as follows:

[0083]

[0084] The structural formula of the 1-(4-ethoxycarbonylphenyl)-2-thiourea is as follows:

[0085]

[0086] The structural formula of the 1,3-bis(tert-butoxycarbonyl)thiourea is as follows:

[0087]

[0088] The structural formula of the 1-(3-ethoxycarbonylphenyl)-2-thiourea is as follows:

[0089]

[0090] In some embodiments, the mass ratio of the semiconductor material to the carbonyl thiourea compound in the composite material is (10–50):1, for example, 10:1, 15:1, 20:1, 25:1, 30:1, 35:1, 40:1, 45:1, 50:1, and any range between two such ratios. Within this range, the composite material can exhibit higher stability, higher carrier transport performance, and / or higher fluorescence quantum yield (PLQY).

[0091] Furthermore, in some embodiments, the semiconductor material is a quantum dot, and the mass ratio of the quantum dot to the carbonyl thiourea compound is (10–30):1, for example, 10:1, 15:1, 20:1, 25:1, 30:1, and any range between two such ratios. Within this range, the composite material can exhibit higher stability and higher fluorescence quantum yield (PLQY).

[0092] Furthermore, in some embodiments, the semiconductor material is N-type inorganic particles, and the mass ratio of the N-type inorganic particles to the carbonyl thiourea compound is (20-50):1, for example, 20:1, 25:1, 30:1, 35:1, 40:1, 45:1, 50:1, and any range between two such ratios. Within this range, the composite material can exhibit higher stability and higher carrier transport performance.

[0093] Furthermore, in some embodiments, the semiconductor material is p-type inorganic particles, and the mass ratio of the p-type inorganic particles to the carbonyl thiourea compound is (20-50):1, for example, 20:1, 25:1, 30:1, 35:1, 40:1, 45:1, 50:1, and any range between two such ratios. Within this range, the composite material can exhibit higher stability and higher carrier transport performance.

[0094] Furthermore, in some embodiments, the semiconductor material is an N-type organic semiconductor material, and the mass ratio of the N-type organic semiconductor material to the carbonyl thiourea compound is (30-50):1, for example, 30:1, 35:1, 40:1, 45:1, 50:1, and any range between two ratios. Within this range, the composite material can possess higher stability and higher carrier transport performance.

[0095] Furthermore, in some embodiments, the semiconductor material is a p-type organic semiconductor material, and the mass ratio of the p-type organic semiconductor material to the carbonyl thiourea compound is (30-50):1, for example, 30:1, 35:1, 40:1, 45:1, 50:1, and any range between two such ratios. Within this range, the composite material can exhibit higher stability and higher carrier transport performance.

[0096] In some embodiments, the average particle size of the N-type inorganic particles ranges from 5 to 10 nm, for example, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or any range between two values.

[0097] In some embodiments, the average particle size of the P-type inorganic particles is 5 to 15 nm, for example, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, or any range between two values.

[0098] In some embodiments, the average particle size of the quantum dots is 5 to 20 nm, for example, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, or any range between two values.

[0099] The N-type inorganic particles include, but are not limited to, one or more of the following: first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the first undoped metal oxide particles includes, but is not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the first doped metal oxide particles include, but are not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include, but are not limited to, one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include, but are not limited to, one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include, but are not limited to, one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include, but are not limited to, one or more of CuInS and CuGaS.

[0100] In some embodiments, the doping amount of the dopant element in the first doped metal oxide particle is 0.01 to 20 wt%, for example, 0.01 wt%, 1 wt%, 5 wt%, 8 wt%, 10 wt%, 12 wt%, 15 wt%, 16 wt%, 18 wt%, 20 wt%, and any range between two values.

[0101] The P-type inorganic particles include, but are not limited to, one or more of the following: second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped metal oxide particles and the metal oxides in the second-undoped metal oxide particles each independently include, but are not limited to, one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping elements in the second-doped metal oxide particles include, but are not limited to, one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides include, but are not limited to, one or more of CuS, MoS3, and WS3. The metal selenides include, but are not limited to, one or more of MoSe3 and WSe3. The metal nitrides include, but are not limited to, P-type gallium nitride.

[0102] In some embodiments, the doping amount of the dopant element in the second doped metal oxide particle is 0.01 to 20 wt%, for example, 0.01 wt%, 1 wt%, 5 wt%, 8 wt%, 10 wt%, 12 wt%, 15 wt%, 16 wt%, 18 wt%, 20 wt%, and any range between two values.

[0103] The quantum dots may include, but are not limited to, one or more of the following: single-structure quantum dots, core-shell structure quantum dots, and perovskite quantum dots. The core-shell structure quantum dots may have one or more shell layers.

[0104] The materials for the single-structure quantum dots, the core materials for the core-shell structure quantum dots, and the shell materials for the core-shell structure quantum dots may include, but are not limited to, one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The group III-V compounds may include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The group I-III-VI compounds may include, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0105] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS.

[0106] The perovskite quantum dots may include, but are not limited to, doped or undoped inorganic perovskite quantum dots, or organic-inorganic hybrid perovskite quantum dots. The general structural formula of the inorganic perovskite quantum dots is AMX3, where A is Cs. + Ions, where M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following. The general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is an organic amine cation, including CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2 + Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of them.

[0107] In some embodiments, the quantum dots, the N-type inorganic particles, and the P-type inorganic particles further have ligands on their surfaces, the ligands including but not limited to substituted or unsubstituted C6-C. 24 Fatty acids, substituted or unsubstituted C6-C 24 Fatty amines, substituted or unsubstituted C6-C 24 Aliphatic thiols, substituted or unsubstituted C6-C 24 Aliphatic sulfides, substituted or unsubstituted C6-C 24 Aliphatic phosphine, substituted or unsubstituted C6-C 24 Aliphatic phosphine oxides, substituted or unsubstituted C8-C 20 Aliphatic phosphates, substituted or unsubstituted C6-C 24 Aliphatic phosphates, substituted or unsubstituted C6-C 24 Aliphatic phosphorous acid and substituted or unsubstituted C6-C 24 One or more of the fatty phosphites, wherein the substituents are selected from one or more of C1-C6 alkyl, C1-C6 alkoxy and halogens.

[0108] In some embodiments, the substituted or unsubstituted C6-C 24 Fatty acids include one or more of the following: decanoic acid, undecenoic acid, tetradecanoic acid, oleic acid, linoleic acid, and stearic acid.

[0109] In some embodiments, the substituted or unsubstituted C6-C 24 Aliphatic thiols include one or more of octylthiol, dodecylthiol, and octadecylthiol.

[0110] In some embodiments, the substituted or unsubstituted C6-C 24 Fatty amines include one or more of oleylamine, octadecylamine, octylamine, dioctylamine, and trioctylamine.

[0111] In some embodiments, the substituted or unsubstituted C6-C 24 Aliphatic phosphines include trioctylphosphine.

[0112] In some embodiments, the substituted or unsubstituted C6-C 24 Aliphatic phosphine oxides include trioctylphosphine oxides.

[0113] The N-type organic semiconductor materials include, but are not limited to, diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide (TSPO1), 1,3,5-tris((3-pyridyl)-3-phenyl)benzene (TmPyPB), 2-(4-biphenyl)-5-phenyloxadiazole (PBD), bis(10-hydroxybenzo[h]quinoline)beryllium (Bebq2) (CAS: 148896-39-3), and 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-tris(4-biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-tris(4-triphenyl ... Azazole (TAZ), 2,7-bis(diphenylphosphine)-9,9'-spirobis[fluorene] (SPPO13), 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBI), 4,6-bis(3,5-di(3-pyridinylphenyl)-2-methylpyrimidine (B3PYMPM), 4,7-diphenyl-1,10-phenanthroline (BPhen), 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxadiazole, 2,9-dimethyl-4 ,7-Diphenyl-1,10-o-phenanthroline, 4,7-Diphenyl-1,10-o-phenanthroline, bis(2-methyl-8-hydroxyquinoline-N1,O8)-1,1'-biphenyl-4-hydroxy)aluminum, 8-hydroxyquinoline aluminum (Alq3), 2,7-bis(diphenyloxyphosphino)-9,9'-spirobis[fluorene], poly[9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene], 9,9-bis[3'-(N,N-dimethylamino)propyl-2,7-fluorene]-alternating-2 One or more of the following: 7-(9,9-dioctylfluorene), 1,3-bis[5-(4-tert-butylphenyl)-2-[1,3,4]oxadiazolyl]benzene (OXD-7), 3',3'",3'""-(1,3,5-triazine-2,4,6-triyl)-tris(([1,1'-biphenyl]-3-carboxynitrile))(CNT2T), and 2,4,6-tris[3-(diphenylphosphoxy)phenyl]-1,3,5-triazole (POT2T, CAS No.: 1646906-26-4).

[0114] The p-type organic semiconductor materials include, but are not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)biphenylamine) (Poly-TPD). N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))](TFB), poly(N-ethyl alkenylcarbazole (PVK) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiron NPB, poly(phenylenevinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spiron One or more of the following: spiro-omeTAD, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazole-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-)phenylenevinylene, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazole)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylates and their derivatives, poly(9,9-octylfluorene) and its derivatives, and poly(spirofluorene) and its derivatives.

[0115] In some embodiments, the quantum dot material comprises one or more of CdZnSe and ZnSe, and the carbonyl thiourea compound comprises one or more of 2-isopropylcarbonyl thiourea, 1-(4-ethoxycarbonylphenyl)-2-thiourea, and 1,3-bis(tert-butoxycarbonyl)thiourea. This is advantageous for giving the composite material higher stability and fluorescence quantum yield.

[0116] In some embodiments, the N-type inorganic particles include one or more of ZnO, Mg-doped ZnO, and SnO2, and the carbonyl thiourea compounds include one or more of 2-isopropylcarbonyl thiourea, 1-(4-ethoxycarbonylphenyl)-2-thiourea, and 1,3-bis(tert-butoxycarbonyl)thiourea. This is beneficial for giving the composite material higher stability and electron mobility.

[0117] In some embodiments, the N-type organic semiconductor material includes one or more of 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene and 2,4,6-tris[3-(diphenylphosphino)phenyl]-1,3,5-triazole, and the carbonyl thiourea compound includes 2-isopropylcarbonyl thiourea. This is beneficial for giving the composite material higher stability and electron mobility.

[0118] In some embodiments, the p-type inorganic particles are made of one or more of NiO and MoO3, and the carbonyl thiourea compounds are made of one or more of 2-isopropylcarbonyl thiourea, 1-(4-ethoxycarbonylphenyl)-2-thiourea, and 1,3-bis(tert-butoxycarbonyl)thiourea. This is beneficial for giving the composite material higher stability and hole mobility.

[0119] In some embodiments, the p-type organic semiconductor material includes one or more of poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] and poly(N-vinylcarbazole), and the carbonyl thiourea compound includes 2-isopropylcarbonyl thiourea. This is beneficial for giving the composite material higher stability and hole mobility.

[0120] Secondly, please refer to Figure 1 This application provides a method for preparing a composite material, comprising the following steps:

[0121] Step S11: Provide semiconductor material, carbonyl thiourea compound, and first solvent;

[0122] Step S12: Mix the semiconductor material, the carbonyl thiourea compound, and the first solvent to obtain a composite material.

[0123] The semiconductor material and the carbonyl thiourea compound are as described above and will not be repeated here.

[0124] In some embodiments, the mass ratio of the semiconductor material to the carbonyl thiourea compound is (10–50):1, for example, 10:1, 15:1, 20:1, 25:1, 30:1, 35:1, 40:1, 45:1, 50:1, and any range between two such ratios. Within this range, the composite material can exhibit higher stability, higher carrier transport performance, and / or higher fluorescence quantum yield (PLQY).

[0125] It is understood that the amount of the first solvent is not limited, as long as it can fully dissolve / disperse the semiconductor material and the carbonyl thiourea compound. In at least some embodiments, the concentration of the semiconductor material in the mixed solution ranges from 5 to 50 mg / mL, for example, 5 mg / mL, 10 mg / mL, 15 mg / mL, 20 mg / mL, 25 mg / mL, 30 mg / mL, 35 mg / mL, 40 mg / mL, 45 mg / mL, 50 mg / mL, and any range between two values. Within this concentration range, it is beneficial to prepare composite materials with high stability, high carrier transport efficiency, and / or high fluorescence quantum yield.

[0126] When the semiconductor material is N-type inorganic particles or P-type inorganic particles, the first solvent includes, but is not limited to, one or more of alcohol solvents and alcohol ether solvents. The alcohol solvents include, but are not limited to, one or more of ethanol, isopropanol, butanol, n-pentanol, and isoamyl alcohol. The alcohol ether solvents include, but are not limited to, ethylene glycol monomethyl ether.

[0127] When the semiconductor material is a quantum dot, the first solvent includes, but is not limited to, one or more of the following: octane, propylene glycol methyl ether acetate, hexane, chloroform, dichloromethane, formamide, trifluoroacetic acid, dimethyl sulfoxide (DMSO), acetonitrile, N,N-dimethylformamide (DMF), hexamethylphosphoramide, pyridine, tetramethylethylenediamine, acetone, triethylamine, dioxane, tetrahydrofuran, methyl formate, tributylamine, methyl ethyl ketone, ethyl acetate, chloroform, trioctylamine, dimethyl carbonate, diethyl ether, isopropyl ether, n-butyl ether, trichloroethylene, diphenyl ether, dichloroethane, benzene, toluene, carbon tetrachloride, carbon disulfide, cyclohexane, and hexane.

[0128] When the semiconductor material is an N-type organic semiconductor material or a P-type organic semiconductor material, the first solvent includes a non-polar solvent, which includes, but is not limited to, one or more of the following: n-octane, isooctane, n-hexane, cyclohexane, ethyl acetate, benzene, toluene, chloroform, carbon tetrachloride, dichloromethane, dichloroethane, and carbon disulfide.

[0129] In some embodiments, before mixing the semiconductor material, the carbonyl thiourea compound, and the first solvent and before obtaining the composite material, the mixture is stirred at room temperature using a magnetic stirrer for 10–30 min, and then filtered through a PTFE (polytetrafluoroethylene) filter with a pore size of 0.2 μm. This facilitates the preparation of a composite material with high stability and good performance.

[0130] Thirdly, embodiments of this application also provide a thin film, the thin film comprising the composite material described above.

[0131] In some embodiments, the semiconductor material in the composite material is the N-type semiconductor material described above. It is understood that, in this case, the thin film can be an electronically functional thin film.

[0132] In some embodiments, the semiconductor material in the composite material is the P-type semiconductor material described above. It can be understood that, in this case, the thin film can be a hole-functional thin film.

[0133] In some embodiments, the semiconductor material in the composite material is the quantum dot described above. It is understood that, in this case, the thin film can be a quantum dot thin film. Furthermore, the quantum dot thin film can be a light-emitting thin film, a light-converting thin film, etc.

[0134] In some embodiments, the thickness of the electronic functional thin film ranges from 15 to 40 nm.

[0135] In some embodiments, the thickness of the hole-functional thin film ranges from 20 to 50 nm.

[0136] In some embodiments, the thickness of the quantum dot film ranges from 10 to 50 nm.

[0137] Fourthly, please refer to Figure 2 This application also provides an optoelectronic device 100, which includes an anode 10, a functional layer 101 and a cathode 20 stacked together.

[0138] The functional layer 101 includes one or more sub-functional layers, wherein at least one of the one or more sub-functional layers includes the composite material described above.

[0139] It is understandable that when two or more sub-functional layers include the composite material described above, the carbonyl thiourea compounds in each sub-functional layer may be the same or different.

[0140] The one or more sub-functional layers include one or more of the following: an electron injection layer 30, an electron transport layer 40, a light-emitting layer 50, a hole transport layer 60, and a hole injection layer 70. One or more of the following: electron injection layer 30, electron transport layer 40, light-emitting layer 50, hole transport layer 60, and hole injection layer 70, include the composite material described above. The electron injection layer 30 and the electron transport layer 40 are located on the cathode side of the optoelectronic device 100, and the hole transport layer and the hole injection layer are located on the anode side of the optoelectronic device.

[0141] In some embodiments, the functional layer 101 includes the electron injection layer 30, the electron injection layer 30 includes the composite material described above, and the semiconductor material in the composite material is the N-type semiconductor material described above.

[0142] In some embodiments, the functional layer 101 includes the electron transport layer 40, the electron transport layer 40 includes the composite material described above, and the semiconductor material in the composite material is the N-type semiconductor material described above.

[0143] In some embodiments, the functional layer 101 includes the light-emitting layer 50, the light-emitting layer 50 includes the composite material described above, and the semiconductor material in the composite material is the quantum dot described above.

[0144] In some embodiments, the functional layer 101 includes the hole transport layer 60, the hole transport layer 60 includes the composite material described above, and the semiconductor material in the composite material is the P-type semiconductor material described above.

[0145] In some embodiments, the functional layer 101 includes the hole injection layer 70, the hole injection layer 70 includes the composite material described above, and the semiconductor material in the composite material is the P-type semiconductor material described above.

[0146] In at least some preferred embodiments, the light-emitting layer 50 includes the composite material described above, and the semiconductor material in the composite material is the quantum dot described above.

[0147] The functional layer 101 of the optoelectronic device 100 described in this application includes the composite material described above, thus exhibiting high luminous efficiency and long lifespan.

[0148] In some embodiments, the optoelectronic device 100 further includes at least one interface layer 102, wherein the interface layer 102 is disposed between the anode 10 and the functional layer 101, and / or, the interface layer 102 is disposed between the cathode 20 and the functional layer 101, and / or, the interface layer 102 is disposed between at least one group of adjacent sub-functional layers.

[0149] The material of the interface 102 is the carbonyl thiourea compound described above. The carbonyl thiourea compound in the interface layer 102 can effectively passivate interface defects between adjacent layers, and during the process of charge carriers being injected into the light-emitting layer through the carbonyl thiourea interface layer 102, the carrier injection can be effectively enhanced based on the quantum tunneling effect, thereby effectively improving the device's brightness, lifetime, and luminous efficiency.

[0150] It is understandable that the carbonyl thiourea compounds in each sub-functional layer may be the same as or different from the carbonyl thiourea compounds in each interface layer 102.

[0151] The thickness of the interface layer 102 is 1 to 2 nm, for example, 1 nm, 1.1 nm, 1.2 nm, 1.3 nm, 1.4 nm, 1.5 nm, 1.6 nm, 1.7 nm, 1.8 nm, 1.9 nm, 2 nm, and any range between two values.

[0152] It is understandable that when the optoelectronic device 100 has two or more interface layers 102, the types of carbonyl thiourea compounds in each interface layer 102 may be the same or different.

[0153] It is understandable that when the optoelectronic device 100 has two or more interface layers 102, the thickness of each interface layer 102 may be the same or different.

[0154] In some embodiments, one or more of the electron transport layer 40, the light-emitting layer 50, and the hole transport layer 60 include the composite material. This is more advantageous for the optoelectronic device 100 to have higher maximum brightness, longer lifespan, and higher current efficiency.

[0155] In some embodiments, an interface layer 102 is disposed between the light-emitting layer 50 and the electron transport layer 40, and / or, an interface layer 102 is disposed between the cathode 20 and the electron transport layer 40, and / or, an interface layer 102 is disposed between the light-emitting layer 50 and the hole transport layer 60, and / or, an interface layer 102 is disposed between the anode 10 and the electron transport layer 40.

[0156] In some embodiments, an interface layer 102 is provided between the light-emitting layer 50 and the electron transport layer 40, between the cathode 20 and the electron transport layer 40, between the light-emitting layer 50 and the hole transport layer 60, and between the anode 10 and the electron transport layer 40. This is more conducive to enabling the optoelectronic device 100 to have higher maximum brightness, longer lifespan, and higher current efficiency.

[0157] The anode 10 and the cathode 20 are electrodes known in the art for use in optoelectronic devices. For example, they may be, independently, but not limited to, doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, elemental metal electrodes, or alloy electrodes. The material of the doped metal oxide electrode may be, but not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), and cadmium-doped zinc oxide. The composite electrode is an electrode formed by stacking two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc., where " / " indicates a stacked structure. For example, AZO / Ag / AZO represents a composite electrode that includes a sequentially stacked AZO layer, an Ag layer, and an AZO layer.

[0158] In some embodiments, when the electron injection layer 30 or the electron transport layer 40 does not include the composite material described above, the material of the electron injection layer 30 or the electron transport layer 40 may be a material known in the art for use in electronic functional layers, such as each of which may be independently selected from, but not limited to, the N-type semiconductor materials described above.

[0159] In some embodiments, when the hole transport layer 60 or the hole injection layer 70 does not include the composite material described above, the material of the hole transport layer 60 or the hole injection layer 70 may be a material known in the art for hole functional layers, such as being independently selected from, but not limited to, the P-type semiconductor materials described above.

[0160] When the light-emitting layer 50 does not include the composite material described above, the material of the light-emitting layer 50 may be a material known in the art for use in light-emitting layers, such as including but not limited to organic light-emitting materials and one or more of the quantum dots described above. The organic light-emitting materials may include, but are not limited to, one or more of the following: CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III)), TCTX:Ir(mmpy)(4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium), diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing BN covalent bonds, HLCT (hybridized local charge transfer excited state) materials, Exciplex (exciplex) light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.

[0161] It is understood that in some embodiments, the optoelectronic device 100 may also include functional layers that are conventionally used in optoelectronic devices to help improve the performance of the optoelectronic device, such as electron blocking layers, hole blocking layers, interface modification layers, etc.

[0162] It is understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the light emission requirements of the optoelectronic device 100.

[0163] In some embodiments, the optoelectronic device further includes a substrate located on the surface of the anode 10 away from the functional layer 101, or the substrate located on the surface of the cathode 20 away from the functional layer 101.

[0164] The substrate can be a rigid substrate or a flexible substrate. In some embodiments, the substrate material may include, but is not limited to, one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0165] It is understood that the optoelectronic device 100 can be an upright optoelectronic device or an inverted optoelectronic device. The optoelectronic device 100 can be a quantum dot optoelectronic device or an organic optoelectronic device.

[0166] Fifthly, please refer to Figure 4 and Figures 2-3 This application provides a method for fabricating an optoelectronic device, comprising the following steps:

[0167] Step S21: Provide the first electrode;

[0168] Step S22: A functional layer 101 is prepared on the first electrode. The functional layer 101 includes one or more sub-functional layers. The preparation method of at least one sub-functional layer includes: providing a composite material, depositing the composite material, and obtaining the sub-functional layer.

[0169] Step S23: Prepare a second electrode on the functional layer 101 to obtain the optoelectronic device 100.

[0170] In some embodiments, the first electrode is an anode 10 and the second electrode is a cathode 20. In other embodiments, the first electrode is a cathode 20 and the second electrode is an anode 10.

[0171] The anode 10, functional layer 101, and cathode 20 are described above and will not be repeated here.

[0172] The methods for preparing each sub-functional layer and the second electrode can be implemented using conventional techniques in the field, such as chemical or physical methods. Chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include physical deposition and solution methods. Physical deposition methods include thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, and pulsed laser deposition, etc. Solution methods can include spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spraying, roller coating, casting, slot coating, and strip coating, etc.

[0173] In at least one embodiment, the method for preparing the at least one subfunctional layer includes: providing a composite material dispersion, the composite material dispersion comprising a composite material and a second solvent, and depositing the composite material dispersion to obtain the subfunctional layer.

[0174] In some embodiments, the concentration of the composite material in the dispersion is 5–50 mg / mL, for example, 5 mg / mL, 10 mg / mL, 11 mg / mL, 12 mg / mL, 13 mg / mL, 14 mg / mL, 15 mg / mL, 16 mg / mL, 17 mg / mL, 18 mg / mL, 19 mg / mL, 20 mg / mL, 25 mg / mL, 30 mg / mL, 35 mg / mL, 40 mg / mL, 45 mg / mL, 50 mg / mL, and any range between two values. Within this range, it is advantageous to prepare a thin film with good film uniformity, which in turn is beneficial for preparing optoelectronic devices with high luminous efficiency and long lifetime.

[0175] In some embodiments, the deposition of the composite material dispersion further includes a first annealing. The temperature range of the first annealing is 80–150°C, for example, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, and any range between two values; the time range of the first annealing is 10–30 min, for example, 10 min, 15 min, 20 min, 25 min, 30 min, and any range between two values.

[0176] When the inorganic particles are N-type or P-type inorganic particles, the second solvent includes, but is not limited to, one or more of alcohol solvents and alcohol ether solvents. The alcohol solvents include, but are not limited to, one or more of ethanol, isopropanol, butanol, n-pentanol, and isoamyl alcohol. The alcohol ether solvents include, but are not limited to, ethylene glycol monomethyl ether.

[0177] When the inorganic particles are quantum dots, the second solvent includes, but is not limited to, one or more of the following: octane, propylene glycol methyl ether acetate, hexane, chloroform, dichloromethane, formamide, trifluoroacetic acid, dimethyl sulfoxide (DMSO), acetonitrile, N,N-dimethylformamide (DMF), hexamethylphosphoramide, pyridine, tetramethylethylenediamine, acetone, triethylamine, dioxane, tetrahydrofuran, methyl formate, tributylamine, methyl ethyl ketone, ethyl acetate, chloroform, trioctylamine, dimethyl carbonate, diethyl ether, isopropyl ether, n-butyl ether, trichloroethylene, diphenyl ether, dichloroethane, benzene, toluene, carbon tetrachloride, carbon disulfide, cyclohexane, and hexane.

[0178] In some embodiments, the method for fabricating the optoelectronic device further includes fabricating an interface layer 102. The material, quantity, and location of the interface layer 102 are as described above and will not be repeated here.

[0179] In some embodiments, the method for preparing the interface layer 102 includes: providing a carbonyl thiourea compound solution comprising a carbonyl thiourea compound and a third solvent, depositing the carbonyl thiourea compound solution, and performing a second annealing to obtain the interface layer 102.

[0180] In some embodiments, the concentration of the carbonyl thiourea compound in the solution is 10–40 mg / mL, for example, 10 mg / mL, 15 mg / mL, 20 mg / mL, 25 mg / mL, 30 mg / mL, 35 mg / mL, 40 mg / mL, or any range between two values. Within this concentration range, it is advantageous to prepare an interface layer 102 with good film-forming properties.

[0181] In some embodiments, the third solvent includes, but is not limited to, one or more of the following: ethanol, isopropanol, butanol, n-pentanol, isoamyl alcohol, ethylene glycol monomethyl ether, octane, propylene glycol methyl ether acetate, hexane, chloroform, dichloromethane, formamide, trifluoroacetic acid, dimethyl sulfoxide (DMSO), acetonitrile, N,N-dimethylformamide (DMF), hexamethylphosphoramide, pyridine, tetramethylethylenediamine, acetone, triethylamine, dioxane, tetrahydrofuran, methyl formate, tributylamine, methyl ethyl ketone, ethyl acetate, chloroform, trioctylamine, dimethyl carbonate, diethyl ether, isopropyl ether, n-butyl ether, trichloroethylene, diphenyl ether, dichloroethane, benzene, toluene, carbon tetrachloride, carbon disulfide, cyclohexane, and hexane.

[0182] The temperature range of the second annealing is 100 to 120°C, for example, 100°C, 105°C, 110°C, 115°C, 120°C, and any range between two values, etc. The time range of the second annealing is 10 to 30 minutes, for example, 10 minutes, 15 minutes, 20 minutes, 25 minutes, 30 minutes, and any range between two values, etc.

[0183] It is understood that, in some embodiments, to accelerate the forward aging of the optoelectronic device 100, after the optoelectronic device 100 is prepared, a heat treatment is performed on the optoelectronic device. In some embodiments, the temperature of the heat treatment is 60–150°C, and the heat treatment time is 1 min–48 h.

[0184] It is understood that when the optoelectronic device 100 also includes functional layers that are conventionally used in optoelectronic devices to help improve the performance of the optoelectronic device, such as electron blocking layers, hole blocking layers, interface modification layers, etc., the method of fabricating the optoelectronic device 100 may also include the step of fabricating the above-mentioned functional layers using conventional techniques in the art.

[0185] Sixthly, this application also relates to a display device, which includes the optoelectronic device 100.

[0186] The display device can be any electronic product with display function, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0187] The present application will be specifically described below through specific embodiments. The following embodiments are only some embodiments of the present application and are not intended to limit the present application.

[0188] Composite Material Example 1

[0189] Blue quantum dots CdZnSe, 2-isopropylcarbonylthiourea (carbonylthiourea compound), and octane solvent were mixed to obtain a mixed solution. The mixed solution was stirred uniformly for 30 min at room temperature (25℃) using a magnetic stirrer. Then, the stirred mixed solution was filtered through a PTFE filter with a pore size of 0.2 μm to obtain a composite material.

[0190] In this embodiment, the composite material includes the quantum dots and the carbonyl thiourea compound, wherein the carbonyl thiourea compound is coordinated with the quantum dots.

[0191] In this embodiment, the mass ratio of the quantum dots to the carbonyl thiourea compound in the composite material is 50:1, and the concentration of the quantum dots is 30 mg / mL.

[0192] Composite Material Example 2

[0193] This embodiment is basically the same as the composite material embodiment 1, except that in this embodiment, the mass ratio of quantum dots to carbonyl thiourea compounds is 40:1.

[0194] Composite Material Example 3

[0195] This embodiment is basically the same as the composite material embodiment 1, except that in this embodiment, the mass ratio of quantum dots to carbonyl thiourea compounds is 30:1.

[0196] Composite Material Example 4

[0197] This embodiment is basically the same as the composite material embodiment 1, except that in this embodiment, 1-(4-ethoxycarbonylphenyl)-2-thiourea is used to replace 2-isopropylcarbonylthiourea in the composite material embodiment 1.

[0198] Composite Material Example 5

[0199] This embodiment is basically the same as that of the composite material embodiment 1, except that in this embodiment, 1,3-bis(tert-butoxycarbonyl)thiourea is used to replace 2-isopropylcarbonylthiourea in the composite material embodiment 1.

[0200] Composite Material Example 6

[0201] This embodiment is basically the same as the composite material embodiment 1, except that ZnSe quantum dots are used to replace CdZnSe quantum dots in the composite material embodiment 1.

[0202] Composite Material Example 7

[0203] This embodiment is basically the same as the composite material embodiment 1, except that ZnO nanoparticles are used to replace the quantum dots in the composite material embodiment 1.

[0204] Composite Material Example 8

[0205] This embodiment is basically the same as the composite material embodiment 7, except that in this embodiment, the mass ratio of ZnO nanoparticles to carbonyl thiourea compounds is 50:1.

[0206] Composite Material Example 9

[0207] This embodiment is basically the same as the composite material embodiment 7, except that in this embodiment, the mass ratio of ZnO nanoparticles to carbonyl thiourea compounds is 20:1.

[0208] Composite Material Example 10

[0209] This embodiment is basically the same as the composite material embodiment 7, except that in this embodiment, 1-(4-ethoxycarbonylphenyl)-2-thiourea is used to replace 2-isopropylcarbonylthiourea in the composite material embodiment 7.

[0210] Composite Material Example 11

[0211] This embodiment is basically the same as the composite material embodiment 7, except that in this embodiment, 1,3-bis(tert-butoxycarbonyl)thiourea is used to replace 2-isopropylcarbonylthiourea in the composite material embodiment 7.

[0212] Composite Material Example 12

[0213] This embodiment is basically the same as the composite material embodiment 7, except that in this embodiment, Mg-doped ZnO nanoparticles (Mg doping amount 5wt%) are used to replace the ZnO nanoparticles in the composite material embodiment 7.

[0214] Composite Material Example 13

[0215] This embodiment is basically the same as the composite material embodiment 7, except that SnO2 nanoparticles are used to replace the ZnO nanoparticles in the composite material embodiment 11.

[0216] Composite Material Example 14

[0217] This embodiment is basically the same as the composite material embodiment 7, except that in this embodiment, TPBI (organic electron transport material) is used to replace the ZnO nanoparticles in the composite material embodiment 11.

[0218] Composite Material Example 15

[0219] This embodiment is basically the same as the composite material embodiment 7, except that in this embodiment, POT2T (organic electron transport material) is used to replace the ZnO nanoparticles in the composite material embodiment 11.

[0220] Composite Material Example 16

[0221] This embodiment is basically the same as the composite material embodiment 1, except that in this embodiment, NiO nanoparticles are used to replace the quantum dots in the composite material embodiment 1.

[0222] Composite Material Example 17

[0223] This embodiment is basically the same as the composite material embodiment 16, except that in this embodiment, the mass ratio of NiO nanoparticles to carbonyl thiourea compounds is 50:1.

[0224] Composite Material Example 18

[0225] This embodiment is basically the same as the composite material embodiment 16, except that in this embodiment, the mass ratio of NiO nanoparticles to carbonyl thiourea compounds is 20:1.

[0226] Composite Material Example 19

[0227] This embodiment is basically the same as the composite material embodiment 16, except that in this embodiment, 1-(4-ethoxycarbonylphenyl)-2-thiourea is used to replace 2-isopropylcarbonylthiourea in the composite material embodiment 16.

[0228] Composite Material Example 20

[0229] This embodiment is basically the same as the composite material embodiment 16, except that in this embodiment, 1,3-bis(tert-butoxycarbonyl)thiourea is used to replace 2-isopropylcarbonylthiourea in the composite material embodiment 16.

[0230] Composite Material Example 21

[0231] This embodiment is basically the same as the composite material embodiment 16, except that in this embodiment, MoO3 nanoparticles are used to replace the NiO nanoparticles in the composite material embodiment 16.

[0232] Composite Material Example 22

[0233] This embodiment is basically the same as the composite material embodiment 16, except that in this embodiment, TFB is used to replace the NiO nanoparticles in the composite material embodiment 16.

[0234] Composite Material Example 23

[0235] This embodiment is basically the same as the composite material embodiment 16, except that in this embodiment, PVK is used to replace the NiO nanoparticles in the composite material embodiment 16.

[0236] Composite Material Comparative Example 1

[0237] The material used in this comparative example is the quantum dot CdZnSe from the composite material example 1.

[0238] Composite Material Comparative Example 2

[0239] The material used in this comparative example is the quantum dot ZnSe from composite material example 6.

[0240] Comparative Example 3 of Composite Materials

[0241] The material used in this comparative example is the ZnO nanoparticles from Composite Material Example 7.

[0242] Composite Material Comparative Example 4

[0243] The material used in this comparative example is SnO2 nanoparticles from composite material example 13.

[0244] Composite Material Comparative Example 5

[0245] The material used in this comparative example is the organic electron transport material TPBI from Composite Material Example 14.

[0246] Composite Material Comparative Example 6

[0247] The material used in this comparative example is the organic electron transport material POT2T from Composite Material Example 15.

[0248] Composite Material Comparative Example 7

[0249] The material used in this comparative example is the NiO nanoparticles from Composite Material Example 16.

[0250] Composite Material Comparative Example 8

[0251] The material used in this comparative example is the MoO3 nanoparticles from Composite Material Example 21.

[0252] Composite Material Comparative Example 9

[0253] The material used in this comparative example is the organic hole transport material TFB from Composite Material Example 22.

[0254] Composite Material Comparative Example 10

[0255] The material used in this comparative example is the organic hole transport material PVK from Composite Material Example 23.

[0256] The initial fluorescence quantum yield (i.e. the fluorescence quantum yield when the material was just prepared) of the composite materials in Examples 1-6 and Comparative Examples 1-2 was tested, and the test results are shown in Table 1.

[0257] The initial carrier mobility (i.e. the carrier mobility when the material was just prepared) of the composite materials in Examples 7-23 and Comparative Examples 3-10 was tested, and the test results are shown in Table 1.

[0258] Stability tests were conducted on the composite materials of Examples 1-23 and Comparative Examples 1-10. The quantum dots of the composite materials of Examples 1-6 and Comparative Examples 1-2 were placed in a constant temperature and humidity chamber at room temperature and 50% relative humidity for 100 hours. The PLQY of the materials after 100 hours was tested, and the PLQY change rate was calculated as (initial PLQY - PLQY after 100 hours) / initial PLQY. A lower PLQY change rate indicates higher stability. The composite materials of Examples 7-23 and Comparative Examples 3-10 were placed in a constant temperature and humidity chamber at room temperature and 50% relative humidity for 100 hours. The carrier mobility of the materials after 100 hours was tested, and the carrier mobility change rate was calculated as (initial carrier mobility - carrier mobility after 100 hours) / initial carrier mobility. A lower carrier mobility change rate indicates higher stability. The test results are shown in Table 1.

[0259] Fluorescence quantum yield was measured using a steady-state fluorescence spectrometer from Edinburgh Instruments, model FS5, with the corresponding accessory SC-30 for measuring fluorescence quantum yield.

[0260] The carrier mobility test method is as follows: The current density-voltage curves of single-electron devices (EODs) prepared from the composite materials of Examples 7-15 and Comparative Examples 3-6, and single-hole devices (HODs) prepared from the composite materials of Examples 16-23 and Comparative Examples 7-10 are tested. The structure of the EOD is an anode ITO / CdZnSe quantum dot emitting layer / electron transport layer / cathode Ag, and the structure of the HOD is an anode ITO / hole transport layer / CdZnSe quantum dot emitting layer / cathode Ag. The space charge confinement current (SCLC) region in the current density-voltage curve is obtained, and then the current density is calculated according to the formula J = (9 / 8)ε. r ε0μ e V 2 / d 3 Calculate the electron / hole mobility, where J represents the current density in mA / cm². -2 ;ε rε₀ represents the relative permittivity, and μ represents the vacuum permittivity. e Electron / hole mobility is expressed in cm. 2 V -1 s -1 V represents the driving voltage, with units of V; d represents the film thickness, with units of m.

[0261] Table 1:

[0262]

[0263]

[0264]

[0265]

[0266] As shown in Table 1:

[0267] Compared with the quantum dots in Comparative Examples 1-2, the composite materials in Examples 1-6 have higher fluorescence quantum yield and higher stability. It can be seen that the composite materials of this application have higher fluorescence quantum yield and higher stability. The reason may be that the carbonyl thiourea compounds described in this application can effectively passivate the surface defects of quantum dots, thereby giving the composite materials a higher fluorescence quantum yield.

[0268] Compared to the composite materials in Comparative Examples 3-10, the composite materials in Examples 7-23 exhibit higher carrier mobility and higher stability. It is evident that the composite materials of this application possess higher carrier mobility and higher stability. This may be because the carbonyl thiourea compounds described in this application can effectively passivate the surface defects of inorganic particles, thereby enabling the thin films prepared from organic semiconductor materials to have higher stability and film quality, thus improving the stability and carrier transport performance of the thin films.

[0269] Device Example 1

[0270] Step S1: Provide an ITO anode glass substrate, clean and dry it, and then treat it in a UV ozone cleaner for 15 minutes to remove surface free radicals and organic contaminants;

[0271] Step S2: Spin-coat TFB material with a concentration of 10 mg / mL onto the ITO anode at a speed of 2500 rpm, UV treat for 10 minutes, and then anneal at 200°C for 30 minutes to obtain a hole transport layer with a thickness of 30 nm.

[0272] Step S3: Provide the composite material from Example 1, disperse it in octane solvent to obtain a composite material solution with a concentration of 30 mg / mL, spin coat the composite material solution onto the hole transport layer in an inert gas environment at room temperature and pressure, spin coat at 1500 rpm, anneal at 100°C for 5 minutes to obtain a light-emitting layer with a thickness of 40 nm.

[0273] Step S4: Place the device in the same room temperature and pressure inert gas environment as in step S3, and spin-coat a ZnO nanoparticle solution with a concentration of 40 mg / mL onto the light-emitting layer at a speed of 3000 rpm for 30 seconds, followed by annealing at 100°C for 15 minutes to obtain an electron transport layer with a thickness of 25 nm.

[0274] Step S5: Through thermal evaporation, under a vacuum degree not exceeding 3×10 -4 In an environment of Pa, Ag was deposited on the electron transport layer at a deposition rate of 1 Å / s for 1000 seconds to obtain a cathode with a thickness of 100 nm.

[0275] Step S6: Encapsulate with epoxy resin to obtain the optoelectronic device.

[0276] Device Examples 2-6

[0277] Device Examples 2 to 6 are basically the same as Device Example 1, except that in Device Examples 2 to 6, the composite material in Composite Material Examples 2 to 6 is used to replace the composite material in Composite Material Example 1.

[0278] Device Example 7

[0279] Device embodiment 7 is basically the same as device embodiment 1, except that in device embodiment 7:

[0280] The method for preparing the light-emitting layer is as follows: blue quantum dots CdZnSe are provided and dispersed in octane solvent to obtain a quantum dot solution with a concentration of 30 mg / mL. The quantum dot solution is then spin-coated onto the hole transport layer in an inert gas environment at room temperature and pressure at 1500 rpm and annealed at 100°C for 5 minutes to obtain a light-emitting layer with a thickness of 40 nm.

[0281] The electron transport layer is prepared as follows: the composite material in Example 7 is provided and dispersed in ethanol solvent to obtain a composite material solution with a concentration of 40 mg / mL. The composite material solution is then spin-coated onto the light-emitting layer in an inert gas environment at room temperature and pressure at a rotation speed of 3000 rpm and annealed at 100°C for 15 minutes to obtain an electron transport layer with a thickness of 25 nm.

[0282] Device Examples 8-15

[0283] Device Examples 8 to 15 are basically the same as Device Example 7, except that in Device Examples 8 to 15, the composite material in Composite Material Examples 8 to 15 is used to replace the composite material in Composite Material Example 7.

[0284] Device Example 16

[0285] Device embodiment 16 is basically the same as device embodiment 1, except that in device embodiment 16:

[0286] The hole transport layer is prepared as follows: the composite material in Example 16 is provided and dispersed in chlorobenzene solvent to obtain a composite material solution with a concentration of 10 mg / mL. The composite material solution is then spin-coated onto ITO in an inert gas environment at room temperature and pressure at a speed of 2500 rpm and annealed at 120°C for 10 minutes to obtain a hole transport layer with a thickness of 30 nm.

[0287] The method for preparing the light-emitting layer is as follows: blue quantum dots CdZnSe are provided and dispersed in octane solvent to obtain a quantum dot solution with a concentration of 30 mg / mL. The quantum dot solution is then spin-coated onto the hole transport layer in an inert gas environment at room temperature and pressure at a rotation speed of 1500 rpm and annealed at 100°C for 5 minutes to obtain a light-emitting layer with a thickness of 40 nm.

[0288] Device Examples 17-23

[0289] Device Examples 17-23 are basically the same as Device Example 16, except that in Device Examples 17-23, the composite material in Composite Material Examples 17-23 is used to replace the composite material in Composite Material Example 16.

[0290] Device Example 24

[0291] Device Example 24 is basically the same as Device Example 1, except that in Device Example 24, the preparation of an interface layer is further included between steps S3 and S4. Specifically:

[0292] 2-Isopropylcarbonylthiourea was dissolved in ethanol to obtain a carbonylthiourea compound solution with a concentration of 5 mg / mL. The carbonylthiourea compound solution was spin-coated onto the light-emitting layer, wherein the spin speed was 3000 rpm and the annealing temperature was 120°C for 5 minutes to obtain an interface layer with a thickness of 1 nm.

[0293] Device Example 25

[0294] Device Example 25 is basically the same as Device Example 1, except that in Device Example 25, the preparation of an interface layer is further included between steps S4 and S5. Specifically:

[0295] 2-Isopropylcarbonylthiourea was dissolved in ethanol to obtain a carbonylthiourea compound solution with a concentration of 5 mg / mL. The carbonylthiourea compound solution was spin-coated onto an electron transport layer, wherein the spin-coating speed was 3000 rpm and the annealing temperature was 120 °C for 5 minutes to obtain an interface layer with a thickness of 1 nm.

[0296] Device Example 26

[0297] Device Example 26 is basically the same as Device Example 16, except that in Device Example 26, an interface layer is further prepared between steps S2 and S3. Specifically:

[0298] 2-Isopropylcarbonylthiourea was dissolved in ethanol to obtain a carbonylthiourea compound solution with a concentration of 5 mg / mL. The carbonylthiourea compound solution was spin-coated onto the hole transport layer, wherein the spin speed was 3000 rpm and the annealing temperature was 120 °C for 5 minutes to obtain an interface layer with a thickness of 1 nm.

[0299] Device Example 27

[0300] Device Example 27 is basically the same as Device Example 16, except that in Device Example 27, the preparation of an interface layer is further included between steps S1 and S2. Specifically:

[0301] 2-Isopropylcarbonylthiourea was dissolved in ethanol to obtain a carbonylthiourea compound solution with a concentration of 5 mg / mL. The carbonylthiourea compound solution was spin-coated onto an anode and annealed at 3000 rpm and 120°C for 5 minutes to obtain an interface layer with a thickness of 1 nm.

[0302] Device Example 28

[0303] Device embodiment 28 is basically the same as device embodiment 16, except that in device embodiment 28:

[0304] Between steps S1 and S2, an interface layer is also prepared, and the method for preparing the interface layer is the same as that for preparing the interface layer in device embodiment 27.

[0305] Between steps S2 and S3, an interface layer is also prepared, and the method for preparing the interface layer is the same as that for preparing the interface layer in device embodiment 26.

[0306] Between steps S3 and S4, an interface layer is also prepared, and the method for preparing the interface layer is the same as that for preparing the interface layer in device embodiment 24.

[0307] Between steps S4 and S5, an interface layer is also prepared, and the method for preparing the interface layer is the same as that for preparing the interface layer in device embodiment 25.

[0308] Device Comparison Examples 1-2

[0309] The devices in Comparative Examples 1 and 2 are basically the same as those in Device Example 1, except that the quantum dots of the composite material in Comparative Examples 1 and 2 are used to replace the composite material in Composite Material Example 1.

[0310] Device Comparison Examples 3-6

[0311] The devices in Comparative Examples 3 to 6 are basically the same as those in Device Example 7, except that the composite material in Comparative Examples 3 to 6 is replaced with the composite material in Composite Material Example 7.

[0312] Device Comparison Examples 7-10

[0313] The devices in Comparative Examples 7 to 10 are basically the same as those in Device Example 16, except that the composite material in Comparative Examples 7 to 10 is replaced with the composite material in Composite Material Example 16.

[0314] The maximum brightness L of the optoelectronic devices in Device Examples 1-28 and Device Comparative Examples 1-10 max Lifetime T95, Lifetime T95@1000nit, and Maximum Current Efficiency CE max The tests were conducted separately. The test results are shown in Table 2.

[0315] Maximum brightness L max The results were obtained using a PR650 luminance meter, where the driving current was a constant current of 2mA.

[0316] The lifetime T95 and lifetime T95@1000nit test methods are as follows: In CDA gas, under a constant current drive of 2mA, the time it takes for the device brightness to decay to a certain percentage of its maximum brightness is measured. The time for the brightness to decay to 95% of the maximum brightness is defined as T95, and this lifetime is the measured lifetime. To shorten the lifetime testing cycle, device lifetime testing is usually performed at high brightness by accelerating device aging, and the lifetime at low brightness is obtained by fitting the decay fitting formula. For example, the lifetime at 1000 nits is denoted as T95@1000nits, and the calculation formula is as follows:

[0317]

[0318] Among them, T95 L The lifespan at low brightness is typically taken as the lifespan at 1000 nits, T95. H The lifetime at high brightness, i.e., the measured lifetime, L H L is the maximum brightness that the device accelerates to. L The typical value is 1000 nits, where A is the acceleration factor, which is set to 1.7.

[0319] Maximum current efficiency CE max The test method (unit (cd / A)) is as follows: using the Fostar FPD optical property measurement equipment, an efficiency test system is built by controlling the QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabVIEW, and parameters such as voltage, current, brightness, and emission spectrum are measured, and the current efficiency is calculated.

[0320] Table 2:

[0321]

[0322]

[0323] As shown in Table 2:

[0324] Compared to the optoelectronic devices of Comparative Examples 1-2, the optoelectronic devices of Examples 1-6 exhibit higher maximum brightness, longer lifetime, and higher current efficiency; compared to the optoelectronic devices of Comparative Examples 3-6, the optoelectronic devices of Examples 7-15 exhibit higher maximum brightness, longer lifetime, and higher current efficiency; compared to the optoelectronic devices of Comparative Examples 7-10, the optoelectronic devices of Examples 16-23 exhibit higher maximum brightness, longer lifetime, and higher current efficiency. It is evident that using the composite material described in this application to prepare the light-emitting layer, electron transport layer, and / or hole transport layer of the optoelectronic device can effectively improve the brightness, lifetime, and efficiency of the optoelectronic device. This may be because the composite material described in this application has a lower defect density and better film-forming properties.

[0325] Compared to the optoelectronic devices of Comparative Examples 1-2, the optoelectronic devices of Examples 24-25 exhibit higher maximum brightness, longer lifetime, and higher current efficiency; compared to the optoelectronic devices of Comparative Examples 7-10, the optoelectronic devices of Examples 26-28 exhibit higher maximum brightness, longer lifetime, and higher current efficiency. It is evident that using the composite materials described in this application to prepare the light-emitting layer, electron transport layer, and / or hole transport layer of the optoelectronic device can effectively improve the brightness, lifetime, and efficiency of the optoelectronic device. This may be because the carbonyl thiourea compounds in the interface layer can effectively passivate interface defects between adjacent layers, and during the process of charge carriers being injected into the light-emitting layer through the carbonyl thiourea interface layer, the quantum tunneling effect can effectively enhance carrier injection, thereby effectively improving the brightness, lifetime, and luminous efficiency of the optoelectronic device.

[0326] The technical solution of this application has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A composite material, characterized in that, This includes semiconductor materials and carbonyl thiourea compounds.

2. The composite material as described in claim 1, characterized in that, The carbonyl thiourea compound has the structural formula shown in formula (I): Among them, R1, R2, and R3 are each independently selected from H, D, substituted or unsubstituted C1 to C2. 20 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 20 Alkenyl, substituted or unsubstituted C2-C 20 Alkyne group, substituted or unsubstituted C1-C 20 Alkyl carbonyl, substituted or unsubstituted C1-C 20 The group comprises an alkoxycarbonyl group, an aromatic group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 60 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 60 substituted or unsubstituted ring atoms, or a combination of these groups; wherein at least one of R1, R2, and R3 is H. R4 is selected from substituted or unsubstituted C1 to C2. 20 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 20 Alkenyl, substituted or unsubstituted C2-C 20 Alkyne group, substituted or unsubstituted C1-C 20 Alkyl carbonyl, substituted or unsubstituted C1-C 20 Alkoxycarbonyl, an aromatic group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 60 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 60 substituted or unsubstituted ring atoms, or a combination of these groups; L is a linking group, selected from single bonds, substituted or unsubstituted C1 to C2 bonds. 20 Alkylene, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 alkyne group, substituted or unsubstituted C2-C 20 Etheryl group, substituted or unsubstituted aryl group with 6 to 20 ring atoms, substituted or unsubstituted aryloxy group with 6 to 20 ring atoms, substituted or unsubstituted arylthio group with 6 to 20 ring atoms, substituted or unsubstituted -(CH2) m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 NHCO(CH2) m4 -, substituted or unsubstituted -(CH2) m5 COO(CH2) m6 - One or more combinations of the following, wherein m1 to m6 are each independently selected from integers from 1 to 20; In R1, R2, R3, R4, and L, each of the substituents independently includes halogen, hydroxyl, nitro, silyl, and C1-C2 groups. 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 One or more of the following: alkylthio, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, and arylthio with 6 to 60 ring atoms.

3. The composite material as described in claim 2, characterized in that, The carbonyl thiourea compounds have the structural formulas shown in formulas (I-1) and (I-2) below: R5 is selected from substituted or unsubstituted C1 to C1. 20 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 20 Alkenyl, substituted or unsubstituted C2-C 20 Alkyne group, substituted or unsubstituted C1-C 20 Alkyl carbonyl, substituted or unsubstituted C1-C 20 Alkoxycarbonyl, an aromatic group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 60 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 60 substituted or unsubstituted ring atoms, or a combination of these groups; L' is a linking group, selected from single bonds, substituted or unsubstituted C1 to C2 bonds. 20 Alkylene, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 alkyne group, substituted or unsubstituted C2-C 20 Etheryl group, substituted or unsubstituted aryl group with 6 to 20 ring atoms, substituted or unsubstituted aryloxy group with 6 to 20 ring atoms, substituted or unsubstituted arylthio group with 6 to 20 ring atoms, substituted or unsubstituted -(CH2) m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 NHCO(CH2) m4 -, substituted or unsubstituted -(CH2) m5 COO(CH2) m6 - One or more combinations of the following, wherein m1 to m6 are each independently selected from integers from 1 to 20; In R5 and L', the substituents each independently include halogen, hydroxyl, nitro, silyl, C1-C2, etc. 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 One or more of the following: alkylthio, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, and arylthio with 6 to 60 ring atoms.

4. The composite material as described in claim 3, characterized in that, It also includes at least one of the following features (1) to (14): (1) R1, R2, and R3 are each independently selected from H, D, substituted or unsubstituted C1 to C2. 15 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 15 Alkenyl, substituted or unsubstituted C2-C 15 Alkyne group, substituted or unsubstituted C1-C 15 Alkyl carbonyl, substituted or unsubstituted C1-C 15 Alkoxycarbonyl, an aromatic group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 30 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 30 substituted or unsubstituted ring atoms, or a combination of these groups; Among them, at least one of R1, R2, and R3 is H; (2) R1, R2, and R3 are each independently selected from H, D, substituted or unsubstituted C1 to C2. 10 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 10 Alkenyl, substituted or unsubstituted C2-C 10 Alkyne group, substituted or unsubstituted C1-C 10 Alkyl carbonyl, substituted or unsubstituted C1-C 10 The group comprises an alkoxycarbonyl group, an aromatic group having 6 to 20 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 20 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 20 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 20 substituted or unsubstituted ring atoms, or a combination of these groups; wherein at least one of R1, R2, and R3 is H; (3) R1, R2, and R3 are each independently selected from H, D, substituted or unsubstituted C1-C8 alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C8 alkenyl, substituted or unsubstituted C2-C8 alkynyl, substituted or unsubstituted C1-C8 alkyl carbonyl, substituted or unsubstituted C1-C8 alkoxy carbonyl, substituted or unsubstituted aromatic group with 6 to 15 ring atoms, substituted or unsubstituted heteroaromatic group with 5 to 15 ring atoms, substituted or unsubstituted aryloxy group with 6 to 15 ring atoms, substituted or unsubstituted heteroaryloxy group with 5 to 15 ring atoms, or combinations of these groups; wherein at least one of R1, R2, and R3 is H; (4) R1, R2, and R3 are each independently selected from H, D, substituted or unsubstituted C1-C8 alkyl, -CF3, substituted or unsubstituted C2-C6 alkenyl, substituted or unsubstituted C2-C6 alkynyl, substituted or unsubstituted C1-C6 alkyl carbonyl, substituted or unsubstituted C1-C6 alkoxy carbonyl, substituted or unsubstituted aromatic group having 6 to 12 ring atoms, substituted or unsubstituted heteroaromatic group having 5 to 12 ring atoms, substituted or unsubstituted aryloxy group having 6 to 12 ring atoms, substituted or unsubstituted heteroaryloxy group having 5 to 12 ring atoms, or combinations of these groups; wherein at least one of R1, R2, and R3 is H; (5) R4 and R5 are each independently selected from substituted or unsubstituted C1 to C1. 15 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 15 Alkenyl, substituted or unsubstituted C2-C 15 Alkyne group, substituted or unsubstituted C1-C 15 Alkyl carbonyl, substituted or unsubstituted C1-C 15 Alkoxycarbonyl, an aromatic group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 30 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 30 substituted or unsubstituted ring atoms, or a combination of these groups; (6) R4 and R5 are each independently selected from substituted or unsubstituted C1 to C1. 10 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 10 Alkenyl, substituted or unsubstituted C2-C 10 Alkyne group, substituted or unsubstituted C1-C 10 Alkyl carbonyl, substituted or unsubstituted C1-C 10 Alkoxycarbonyl, an aromatic group having 6 to 20 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 20 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 20 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 20 substituted or unsubstituted ring atoms, or a combination of these groups; (7) R4 and R5 are each independently selected from substituted or unsubstituted C1-C8 alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C8 alkenyl, substituted or unsubstituted C2-C8 alkynyl, substituted or unsubstituted C1-C8 alkyl carbonyl, substituted or unsubstituted C1-C8 alkoxy carbonyl, substituted or unsubstituted aromatic group having 6 to 15 ring atoms, substituted or unsubstituted heteroaromatic group having 5 to 15 ring atoms, substituted or unsubstituted aryloxy group having 6 to 15 ring atoms, substituted or unsubstituted heteroaryloxy group having 5 to 15 ring atoms, or combinations of these groups; (8) R4 and R5 are each independently selected from substituted or unsubstituted C1-C6 alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C6 alkenyl, substituted or unsubstituted C2-C6 alkynyl, substituted or unsubstituted C1-C6 alkyl carbonyl, substituted or unsubstituted C1-C6 alkoxy carbonyl, substituted or unsubstituted aromatic group having 6 to 12 ring atoms, substituted or unsubstituted heteroaromatic group having 5 to 12 ring atoms, substituted or unsubstituted aryloxy group having 6 to 12 ring atoms, substituted or unsubstituted heteroaryloxy group having 5 to 12 ring atoms, or combinations of these groups; (9) L and L' are selected from single bonds, substituted bonds, or unsubstituted bonds of C1 to C2. 15 Alkylene, substituted or unsubstituted C2-C 15 alkenyl, substituted or unsubstituted C2-C 15 alkyne group, substituted or unsubstituted C2-C 15 Etheryl group, substituted or unsubstituted aryl group with 6 to 15 ring atoms, substituted or unsubstituted aryloxy group with 6 to 15 ring atoms, substituted or unsubstituted arylthio group with 6 to 15 ring atoms, substituted or unsubstituted -(CH2) m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 NHCO(CH2) m4 -, substituted or unsubstituted -(CH2) m5 COO(CH2) m6 - One or more combinations of the following, wherein m1 to m6 are each independently selected from integers from 1 to 15; (10) L and L' are selected from single bonds, substituted or unsubstituted C1 to C2 bonds. 10 Alkylene, substituted or unsubstituted C2-C 10 alkenyl, substituted or unsubstituted C2-C 10 alkyne group, substituted or unsubstituted C2-C 10 Etheryl group, substituted or unsubstituted aryl group with 6 to 12 ring atoms, substituted or unsubstituted aryloxy group with 6 to 12 ring atoms, substituted or unsubstituted arylthio group with 6 to 12 ring atoms, substituted or unsubstituted -(CH2) m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 NHCO(CH2) m4 -, substituted or unsubstituted -(CH2) m5 COO(CH2) m6 - One or more combinations of the following, wherein m1 to m6 are each independently selected from integers from 1 to 10; (11) L and L' are selected from single bonds, substituted or unsubstituted C1-C8 alkylene groups, substituted or unsubstituted C2-C8 alkenyl groups, substituted or unsubstituted C2-C8 alkyne groups, substituted or unsubstituted C2-C8 etheryl groups, substituted or unsubstituted aryl groups with 6-10 ring atoms, substituted or unsubstituted aryloxy groups with 6-10 ring atoms, substituted or unsubstituted arylthio groups with 6-10 ring atoms, and substituted or unsubstituted -(CH2). m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 NHCO(CH2) m4 -, substituted or unsubstituted -(CH2) m5 COO(CH2) m6 - One or more combinations of the following, wherein m1 to m6 are each independently selected from integers from 1 to 6; (12) In R1, R2, R3, R4, R5, L, L', the substituents of the substitutions each independently include halogen, hydroxyl, nitro, silyl, C1-C1, C2, C3, R4, R5, L, L'. 15 Alkyl, C1-C 15 Alkoxy, C1-C 15 One or more of the following: alkylthio, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, and arylthio with 6 to 30 ring atoms; (13) In R1, R2, R3, R4, R5, L, L', the substituents of the substitutions each independently include halogen, hydroxyl, nitro, silyl, C1-C2, C3-C4, C5-C6, C4 ... 10 Alkyl, C1-C 10 Alkoxy, C1-C 10 One or more of the following: alkylthio, aryl with 6 to 20 ring atoms, aryloxy with 6 to 20 ring atoms, and arylthio with 6 to 20 ring atoms; (14) In R1, R2, R3, R4, R5, L, L', the substituents of the substitutions each independently include one or more of halogen, hydroxyl, nitro, silyl, C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio, aryl with 6 to 12 ring atoms, aryloxy with 6 to 12 ring atoms, and arylthio with 6 to 12 ring atoms.

5. The composite material as described in claim 1, characterized in that, The resistivity of the semiconductor material is 1 mΩ·cm to 1 GΩ·cm; and / or The semiconductor material includes one or more of quantum dots, N-type semiconductor materials, and P-type semiconductor materials, wherein the N-type semiconductor material includes one or more of N-type inorganic particles and N-type organic semiconductor materials, and the P-type semiconductor material includes one or more of P-type inorganic particles and P-type organic semiconductor materials; and / or The carbonylthiourea compound is selected from one or more of 2-isopropylcarbonylthiourea, 1-(4-ethoxycarbonylphenyl)-2-thiourea, 1,3-bis(tert-butoxycarbonyl)thiourea, and 1-(3-ethoxycarbonylphenyl)-2-thiourea; and / or In the composite material, the mass ratio of the semiconductor material to the carbonyl thiourea compound is (10-50):

1.

6. The composite material as described in claim 5, characterized in that, When the semiconductor material is the quantum dot, the N-type inorganic particle, or the P-type inorganic particle, the carbonyl thiourea compound is coordinated with the inorganic semiconductor material; and / or When the semiconductor material is an N-type organic semiconductor material or a P-type organic semiconductor material, the carbonyl thiourea compound is bound to the surface and / or interior of the organic molecules of the organic semiconductor material through electrostatic interactions; and / or The semiconductor material is a quantum dot, and the mass ratio of the quantum dot to the carbonyl thiourea compound is (10-30):1; and / or The semiconductor material is N-type inorganic particles, and the mass ratio of the N-type inorganic particles to the carbonyl thiourea compound is (20-50):1; and / or The semiconductor material is a p-type inorganic particle, and the mass ratio of the p-type inorganic particle to the carbonyl thiourea compound is (20-50):1; and / or The semiconductor material is an N-type organic semiconductor material, and the mass ratio of the N-type organic semiconductor material to the carbonyl thiourea compound is (30-50):1; The semiconductor material is a p-type organic semiconductor material, and the mass ratio of the p-type organic semiconductor material to the carbonyl thiourea compound is (30-50):1; and / or The average particle size of the N-type inorganic particles is 5–10 nm; and / or The average particle size of the P-type inorganic particles is 5–15 nm; and / or The average particle size of the quantum dots is 5–20 nm; and / or The N-type inorganic particles include one or more of the following: first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The first undoped metal oxide particles are made of one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particles is made of one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The doping amount of the doping element in the first doped metal oxide particles is 0.01–20 wt%. The IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor material includes one or more of InP and GaP. The IB-IIIA-VIA group semiconductor material includes one or more of CuInS and CuGaS. and / or The P-type inorganic particles include one or more of the following: second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped and second-undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping element in the second-doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, and V. The doping amount of the doping element in the second-doped metal oxide particles is 0.01–20 wt%. The metal sulfides include one or more of CuS, MoS3, and WS3. The metal selenides include one or more of MoSe3 and WSe3. The metal nitrides include P-type gallium nitride; and / or The quantum dots include one or more of single-structure quantum dots, core-shell quantum dots, and perovskite quantum dots. The core-shell quantum dots comprise one or more shell layers. The materials of the single-structure quantum dots, the core material of the core-shell quantum dots, and the shell materials of the core-shell quantum dots respectively include one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, and ZnSe. One or more of the following: S, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds include SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnS Te, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe; the III-V compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAl The perovskite quantum dots are selected from one or more of the following: NP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the group I-III-VI compounds include one or more of CuInS2, CuInSe2, and AgInS2; the perovskite quantum dots include doped or undoped inorganic perovskite quantum dots, or organic-inorganic hybrid perovskite quantum dots, wherein the general structural formula of the inorganic perovskite quantum dots is AMX3, where A is Cs. + Ions, where M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is an organic amine cation, including CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following; and / or The N-type organic semiconductor materials include diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide, 1,3,5-tris((3-pyridyl)-3-phenyl)benzene, 2-(4-biphenyl)-5-phenyloxadiazole, bis(10-hydroxybenzo[h]quinoline)beryllium, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, and 2,7-bis(diphenylphosphine)- 9,9'-spirobis[fluorene], 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 4,6-bis(3,5-di(3-pyridylphenyl)-2-methylpyrimidine 4,7-diphenyl-1,10-phenanthroline, 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxadiazole, 2,9-dimethyl-4,7-diphenyl-1,10-o-diazaphenanthroline, 4,7 -Diphenyl-1,10-o-phenanthroline, bis(2-methyl-8-hydroxyquinoline-N1,O8)-1,1'-biphenyl-4-hydroxy)aluminum, 8-hydroxyquinoline aluminum, 2,7-bis(diphenylphosphine oxide)-9,9'-spirobis[fluorene], poly[9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene], 9,9-bis[3'-(N,N-dimethylamino)propyl-2,7-fluorene] -Alternating-2,7-(9,9-dioctylfluorene), 1,3-bis[5-(4-tert-butylphenyl)-2-[1,3,4]oxadiazolyl]benzene, 3',3'",3'""-(1,3,5-triazine-2,4,6-triyl)-tris(([1,1'-biphenyl]-3-carboxynitrile)), 2,4,6-tris[3-(diphenylphosphooxy)phenyl]-1,3,5-triazole; and / or The p-type organic semiconductor material includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)biphenylamine), N,N'- Bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives Biological, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiroNPB, poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 4,4'-cyclohexane One or more of the following: 1,3-bis(carbazole-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylenevinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazole)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylates and their derivatives, poly(9,9-octylfluorene) and its derivatives, and poly(spirofluorene) and its derivatives; and / or The quantum dots are made of one or more of CdZnSe and ZnSe, and the carbonyl thiourea compounds are made of one or more of 2-isopropylcarbonyl thiourea, 1-(4-ethoxycarbonylphenyl)-2-thiourea, and 1,3-bis(tert-butoxycarbonyl)thiourea; and / or The N-type inorganic particles are one or more of ZnO, Mg-doped ZnO, and SnO2; the carbonyl thiourea compounds are one or more of 2-isopropylcarbonyl thiourea, 1-(4-ethoxycarbonylphenyl)-2-thiourea, and 1,3-bis(tert-butoxycarbonyl)thiourea; and / or The N-type organic semiconductor material includes one or more of 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene and 2,4,6-tris[3-(diphenylphosphino)phenyl]-1,3,5-triazole, and the carbonyl thiourea compound includes 2-isopropylcarbonyl thiourea; and / or The material of the P-type inorganic particles includes one or more of NiO and MoO3, and the carbonyl thiourea compound includes one or more of 2-isopropylcarbonyl thiourea, 1-(4-ethoxycarbonylphenyl)-2-thiourea, and 1,3-bis(tert-butoxycarbonyl)thiourea; and / or The p-type organic semiconductor material includes one or more of poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] and poly(N-vinylcarbazole), and the carbonyl thiourea compound includes 2-isopropylcarbonyl thiourea.

7. A thin film, characterized in that, The composite material includes any one of claims 1 to 6.

8. An optoelectronic device, characterized in that, It includes a stacked anode, a functional layer, and a cathode, wherein the functional layer includes one or more sub-functional layers, wherein, Of the one or more sub-functional layers, at least one sub-functional layer includes the composite material according to any one of claims 1 to 6; and / or The optoelectronic device further includes at least one interface layer, wherein the interface layer is disposed between the anode and the functional layer, and / or between the cathode and the functional layer, and / or between at least one group of adjacent sub-functional layers, and the material of the interface layer includes carbonyl thiourea compounds in the composite materials of any one of claims 1 to 5.

9. The optoelectronic device as described in claim 8, characterized in that, The thickness of the interface layer is 1–2 nm; and / or The one or more sub-functional layers include one or more of an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, and a hole injection layer, wherein one or more of the electron injection layer, the electron transport layer, the light-emitting layer, the hole transport layer, and the hole injection layer include the composite material according to any one of claims 1 to 6; and / or The anode and the cathode each independently include a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode, or an alloy electrode. The material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, or ZnS / Al / ZnS. The material of the metal element electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba.

10. The optoelectronic device as described in claim 9, characterized in that, One or more of the electron transport layer, the light-emitting layer, and the hole transport layer include the composite material according to any one of claims 1 to 6; and / or An interface layer is disposed between the light-emitting layer and the electron transport layer, and / or, an interface layer is disposed between the cathode and the electron transport layer, and / or, an interface layer is disposed between the light-emitting layer and the hole transport layer, and / or, an interface layer is disposed between the anode and the electron transport layer; or An interface layer is provided between the light-emitting layer and the electron transport layer, between the cathode and the electron transport layer, between the light-emitting layer and the hole transport layer, and between the anode and the electron transport layer.

11. A display device, characterized in that, The display device includes the optoelectronic device according to any one of claims 8 to 10.

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