Optoelectronic device, method of manufacturing an optoelectronic device, and electronic device

Abstract

This application discloses an optoelectronic device, a method for fabricating the optoelectronic device, and an electronic device. The optoelectronic device includes: an anode and a cathode disposed opposite to each other, a hole functional layer disposed between the anode and the cathode, and an auxiliary layer disposed between the hole functional layer and the cathode. The auxiliary layer is made of a first metal oxide, and the surface of the first metal oxide is adsorbed and / or bonded with a first electron-donating group, which can reduce the hole injection barrier, thereby increasing the hole injection level, promoting electron-hole transport balance, and thus improving the device efficiency and device lifetime of the optoelectronic device.

Description

Technical Field

[0001] This application relates to the field of organic materials technology, specifically to an optoelectronic device, a method for preparing the optoelectronic device, and an electronic device. Background Technology

[0002] Optoelectronic devices refer to a class of devices made using the photoelectric effect of semiconductors, including but not limited to optoelectronic devices, solar cells, or photodetectors. Taking light-emitting devices as an example, light-emitting devices include, but are not limited to, Organic Light-Emitting Diodes (OLEDs) and Quantum Dot Light-Emitting Diodes (QLEDs). OLEDs / QLEDs have a "sandwich" structure, which includes an anode, a cathode, and a light-emitting layer. The anode and cathode are positioned opposite each other, and the light-emitting layer is positioned between the anode and cathode. The light-emitting principle of OLEDs / QLEDs is as follows: electrons are injected from the cathode of the device into the light-emitting region, and holes are injected from the anode into the light-emitting region. Electrons and holes recombine in the light-emitting region to form excitons. The recombinated excitons release photons through radiative transitions, thereby emitting light.

[0003] After years of development, optoelectronic devices have made significant progress in performance indicators and demonstrated enormous application potential. However, shortcomings still exist, such as the need for further improvement in device efficiency. Therefore, how to further improve the device efficiency of optoelectronic devices is of great significance to their application and development. Summary of the Invention

[0004] In view of the shortcomings of the prior art, this application provides an optoelectronic device, a method for fabricating the optoelectronic device, and an electronic device.

[0005] In a first aspect, this application provides an optoelectronic device, comprising:

[0006] The anode and cathode are positioned opposite each other;

[0007] A hole-functional layer is disposed between the anode and the cathode; and

[0008] An auxiliary layer is disposed between the hole functional layer and the cathode;

[0009] The auxiliary layer is made of a first metal oxide, the surface of which is adsorbed and / or bonded with a first electron-donating group.

[0010] Secondly, this application provides a method for fabricating an optoelectronic device, comprising the following steps:

[0011] A first electrode is provided, and a hole functional layer is formed on one side of the first electrode; and

[0012] A second electrode is formed on the side of the hole-functional layer away from the first electrode;

[0013] Wherein, when the first electrode is an anode and the second electrode is a cathode, after the step of forming the hole functional layer and before the step of forming the second electrode, the method for fabricating the optoelectronic device further includes the step of forming an auxiliary layer on the side of the hole functional layer away from the first electrode, and forming the second electrode on the side of the auxiliary layer away from the hole functional layer; or, when the first electrode is a cathode and the second electrode is an anode, before the step of forming the hole functional layer, the method for fabricating the optoelectronic device further includes the step of forming an auxiliary layer on one side of the first electrode, and forming the hole functional layer on the side of the auxiliary layer away from the first electrode;

[0014] The method for preparing the auxiliary layer includes the steps of: depositing a composition, and then heat-treating the deposited composition to obtain the auxiliary layer; the auxiliary layer includes an organometallic compound, a fuel, and a solvent, wherein the organometallic compound includes a second electron-donating group, the organometallic compound includes a first metal element, and the fuel is an oxygen-containing reducing agent fuel.

[0015] Thirdly, this application provides an electronic device, which includes an optoelectronic device as described in the first aspect, or an optoelectronic device prepared by the method described in the second aspect.

[0016] This application provides an optoelectronic device, a method for fabricating the optoelectronic device, and an electronic device, which have the following technical advantages:

[0017] The optoelectronic device includes an auxiliary layer disposed between the hole functional layer and the cathode. The auxiliary layer includes a first metal oxide. The surface of the first metal oxide is adsorbed with a first electron-donating group and / or the surface of the first metal oxide is connected with a first ligand. The first ligand includes a first electron-donating group, which can reduce the hole injection barrier, thereby increasing the hole injection level and promoting electron-hole transport balance, thereby improving the device efficiency and device lifetime of the optoelectronic device. Attached Figure Description

[0018] The technical solution and other beneficial effects of this application will become apparent from the following detailed description of specific embodiments in conjunction with the accompanying drawings.

[0019] Figure 1 This is a schematic diagram of the structure of an optoelectronic device provided in an embodiment of this application.

[0020] Figure 2The current density-voltage characteristic curves of the optoelectronic devices in Examples 1 to 10 provided in this application.

[0021] Figure 3 The current density-voltage characteristic curves of the optoelectronic devices in Examples 11 to 15 provided in this application.

[0022] Figure 4 The current density-voltage characteristic curves of the optoelectronic devices in Comparative Examples 1 to 5 provided in this application.

[0023] Figure 5 External quantum efficiency-current density characteristic curves of the optoelectronic devices in Examples 1 to 10 provided in this application.

[0024] Figure 6 External quantum efficiency-current density characteristic curves of the optoelectronic devices in Examples 11 to 15 provided in this application.

[0025] Figure 7 External quantum efficiency-current density characteristic curves of the optoelectronic devices in Comparative Examples 1 to 5 provided in this application.

[0026] Figure 8 External quantum efficiency-storage days characteristic curves of optoelectronic devices in Examples 2, 14, 1, 3 and 4 provided in this application.

[0027] Figure 9 Electroluminescence spectra of the optoelectronic devices in Embodiment 14 and Comparative Example 2 provided in this application.

[0028] Figure 10 Electroluminescence spectra of the optoelectronic devices in Embodiment 15 and Comparative Example 3 provided in this application. Detailed Implementation

[0029] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those familiar to those skilled in the art. Furthermore, any methods and materials similar to or equivalent to those described herein may be applied to this invention. The preferred embodiments and materials described herein are for illustrative purposes only and do not limit the scope of this application.

[0031] It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of embodiments. The various embodiments of this application may exist in a range format. It should be understood that the description in a range format is merely for convenience and simplicity and should not be construed as a rigid limitation on the scope of the invention. Therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is indicated herein, it means including any referenced number (fraction or integer) within the indicated range.

[0032] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the optoelectronic device in its actual use or operating state, specifically the orientation shown in the accompanying drawings; while "inner" and "outer" refer to the outline of the optoelectronic device. The terms "first," "second," "third," etc., are used merely as indications and do not impose numerical requirements or establish a sequence.

[0033] In this application, descriptions such as "layer A is formed on one side of layer B," "layer A is formed on the side of layer B away from layer C," or similar expressions can mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, i.e., layer A and layer B are in direct contact; or they can mean that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, i.e., other spacer structures can be formed between layer A and layer B. Similarly, "layer A is disposed on one side of layer B" or "layer A is disposed on the side of layer B away from layer C" can mean that layer A and layer B are in direct contact, or that other spacer structures are provided between layer A and layer B; "layer A is disposed between layer B and layer C" can mean that layer A and layer B are in direct contact and layer A and layer C are in direct contact, or layer A and layer B are in direct contact and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and layer A and layer C are in direct contact.

[0034] The term "including" means "including but not limited to". The term "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. A and B can be singular or plural. The term "at least one" means one or more, and "more than one" means two or more. The terms "at least one", "at least one of the following", or similar expressions refer to any combination of these items, including any combination of a single or plural type. For example, "at least one of a, b, or c" or "at least one of a, b, and c" can be expressed as: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can each be a single or multiple type.

[0035] The term "average particle size" refers to the area-average particle size of a particle swarm. Area-average particle size is calculated by dividing the total volume of the particle swarm by its total area, which is the reciprocal of the surface area per unit volume. If an imaginary swarm of particles with uniform size is used to replace the original swarm, and the total volume and area of ​​this imaginary swarm are identical to the original swarm, then the diameter of this imaginary swarm is the area-average particle size of the original swarm. Area-average particle size can be obtained through statistical analysis, using transmission electron microscopy to statistically analyze the particle size of each particle in the swarm.

[0036] The term "aliphatic chain hydrocarbon group" refers to an aliphatic straight-chain hydrocarbon group or an aliphatic branched hydrocarbon group. "C1-C30 aliphatic chain hydrocarbon group" can be, for example, aliphatic chain hydrocarbon groups of C1-C20, C1-C18, C1-C15, C1-C12, C1-C10, C1-C8, C1-C6, or C1-C3. Aliphatic chain hydrocarbon groups can be, for example, C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, C9 alkyl, or C10 alkyl. Suitable examples of "aliphatic chain hydrocarbon groups" include, but are not limited to, methyl, ethyl, vinyl, ethynyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl, 3,7-dimethyloctyl, n-nonyl, n-decyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyl Decyl, 2-octyldecyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecanyl, n-hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, n-heptadecyl, n-octadecyl, n-octadecyl, n-heptadecyl, n-octadecyl, n-heptadecyl, n-eicosyl, 2-ethyleicosyl, 2-butyleicosyl, 2-hexyleicosyl, 2-octyleicosyl, n-monodecyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, or n-trianecanyl.

[0037] The term "aliphatic subchain hydrocarbon group" refers to a group obtained by removing one hydrogen atom from the aforementioned aliphatic chain hydrocarbon group.

[0038] The term "aliphatic chain hydrocarbon group" refers to a group with the general formula *-O-aliphatic chain hydrocarbon group, where * indicates a bonding site and O represents an oxygen atom. Suitable examples include, but are not limited to, methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), tert-butoxy (-OC(CH3)3 or -OtBu), and n-hexyloxy (-O-C6H). 13 ), n-decanoyloxy (-OC) 10 H 21 ), or n-dodecyloxy (-OC)12 H 25 ).

[0039] The term "aliphatic subchain hydroxyl group" refers to the group obtained by removing one hydrogen atom from the aforementioned aliphatic chain hydroxyl group.

[0040] The term "aliphatic cyclic hydrocarbon group" refers to an aliphatic hydrocarbon group having a cyclic structure. "Aliphatic cyclic hydrocarbon group with 3 to 30 ring atoms" can be, for example, an aliphatic cyclic hydrocarbon group with 3 to 20 ring atoms, an aliphatic cyclic hydrocarbon group with 3 to 18 ring atoms, an aliphatic cyclic hydrocarbon group with 3 to 16 ring atoms, an aliphatic cyclic hydrocarbon group with 3 to 14 ring atoms, an aliphatic cyclic hydrocarbon group with 3 to 12 ring atoms, an aliphatic cyclic hydrocarbon group with 3 to 10 ring atoms, an aliphatic cyclic hydrocarbon group with 3 to 8 ring atoms, an aliphatic cyclic hydrocarbon group with 3 to 6 ring atoms, or an aliphatic cyclic hydrocarbon group with 3 to 5 ring atoms. Suitable examples include, but are not limited to, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, or adamantyl.

[0041] The term "aliphatic subcyclic hydrocarbon group" refers to a group obtained by removing one hydrogen atom from the aforementioned aliphatic cyclic hydrocarbon group.

[0042] The term "aliphatic heterocyclic hydrocarbon group" refers to an aliphatic cyclic hydrocarbon group in which at least one carbon atom is replaced by a non-carbon atom. The non-carbon atom can be one or more of N, O, S, Si, and P atoms. The number of heteroatoms in the aliphatic heterocyclic hydrocarbon group is independently between 1 and 20. "Aliphatic heterocyclic hydrocarbon group with 3 to 30 ring atoms" can be, for example, an aliphatic heterocyclic hydrocarbon group with 3 to 20 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 18 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 16 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 14 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 12 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 10 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 8 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 6 ring atoms, or an aliphatic heterocyclic hydrocarbon group with 3 to 5 ring atoms. Suitable examples of aliphatic heterocyclic hydrocarbon groups include, but are not limited to, cyclothioethyl, acridine, or ethylene oxide.

[0043] The term "aliphatic heterocyclic hydrocarbon group" is a group obtained by removing one hydrogen atom from the aforementioned aliphatic heterocyclic hydrocarbon group.

[0044] The term "aryl" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing one hydrogen atom. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl, and in the case of a polycyclic ring, at least one of the rings is an aromatic ring system. "Aryl with 6 to 30 ring atoms" can, for example, be an aryl with 6 to 24 ring atoms, an aryl with 6 to 20 ring atoms, an aryl with 6 to 18 ring atoms, an aryl with 6 to 16 ring atoms, an aryl with 6 to 14 ring atoms, or an aryl with 6 to 10 ring atoms. Suitable examples include, but are not limited to, phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthryl, fluoranyl, triphenylene, pyrene, perylene, tetraphenyl, fluorenyl, dinaphthylphenyl, acenaphthyl, and their derivatives. Understandably, multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, and diaryl ether systems should also be included in the definition of aryl.

[0045] The term "aryl" refers to a group obtained by removing a hydrogen atom from the aforementioned aryl group.

[0046] The term "heteroaryl" refers to an aryl group in which at least one carbon atom is replaced by a non-carbon atom. The non-carbon atom can be one or more of N, O, S, Si, and P atoms, and the number of heteroatoms can be, for example, 1 to 20. "Heteroaryl with 5 to 30 ring atoms" can be, for example, a heteroaryl with 5 to 24 ring atoms, a heteroaryl with 5 to 20 ring atoms, a heteroaryl with 5 to 18 ring atoms, a heteroaryl with 5 to 16 ring atoms, a heteroaryl with 5 to 14 ring atoms, or a heteroaryl with 5 to 10 ring atoms. Suitable examples include, but are not limited to, thiophene, furanyl, pyrrolyl, diazolyl, triazolyl, imidazole, pyridyl, bipyridyl, pyrimidinyl, triazinyl, acridineyl, pyridazinyl, quinolinyl, isoquinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridopyrimidinyl, pyridopyrazinyl, benzothiophene, benzofuranyl, indolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thienopyrrolyl, thienopyrrolyl, furanolyl, furanolyl, thienofuranyl, benzoisoxazolyl, benzoisothiazolyl, benzoimidazolyl, o-diazonyl, phenanthridine, primidyl, quinazolinone, dibenzothiophene, dibenzofuranyl, or carbazolyl.

[0047] The term "hybrid aryl" refers to a group obtained by removing a hydrogen atom from the aforementioned heteroaryl group.

[0048] In this application, "halogen group" or "halogen" represents -Cl, -Br, -F or -I; hydroxyl group represents -OH; carboxyl group represents -COOH; nitro group represents -NO2; sulfonic acid group represents -SO3H; mercapto group represents -SH; cyano group represents *-C≡N.

[0049] In this application, "electron-donating group" refers to a functional group that can donate electrons to other parts of a molecule.

[0050] In this application, the thickness of the thin film refers to the average thickness of the thin film, and the thickness of a certain functional layer refers to the average thickness of the functional layer. The thickness is obtained by measuring a step tester.

[0051] The terms “combinations thereof,” “any combination thereof,” and “any combination thereof” as used in this application include all suitable combinations of any two or more of the listed items.

[0052] The applicant discovered that some optoelectronic devices exhibit an imbalance between electron and hole injection, negatively impacting device lifetime and luminous efficiency. This imbalance is particularly pronounced in quantum dot light-emitting diodes (LEDs). Taking quantum dot LEDs as an example, the electron functional layer is typically made of N-type metal oxides (e.g., ZnO nanoparticles), while the hole functional layer is generally made of organic materials. This results in a significantly higher electron injection efficiency than hole injection efficiency, indicating an imbalance in carrier injection. Excess electrons deactivate the quantum dots, negatively affecting the device's quantum efficiency and stability. Furthermore, blue quantum dot LEDs suffer from insufficient electron injection. While green and red quantum dot LEDs have higher electron injection levels, the excessive electron injection due to high electron mobility severely damages the stability of both the quantum dots and the hole functional materials, leading to device efficiency degradation. Additionally, electrons accumulated in the hole functional layer cause misalignment in the electroluminescence peak of the quantum dot LED, resulting in a hole-functional layer emission peak. This contributes to a decrease in the lifetime of the quantum dot LED during storage, and the external quantum efficiency also continuously declines.

[0053] For green and red quantum dot LEDs, introducing insulating layers between the electronic functional layer and the light-emitting layer, and / or between the electronic functional layer and the cathode to reduce electron injection efficiency can easily lead to uneven light emission or no light emission at all. Furthermore, precise control of the insulating layer thickness is required to achieve the desired effect, increasing the complexity of mass production and raising manufacturing costs. In addition, reducing the electron injection level may not improve device lifetime or may only improve it to a limited extent. Therefore, to further improve the device lifetime and efficiency of quantum dot LEDs, it is necessary to increase the hole injection level of the optoelectronic device to promote carrier transport balance.

[0054] Based on this, embodiments of this application provide an optoelectronic device, which includes, but is not limited to, light-emitting devices, photovoltaic cells, or photodetectors, such as... Figure 1 As shown, the optoelectronic device 10 includes: an anode 101 and a cathode 102 disposed opposite to each other, a hole functional layer 103 disposed between the anode 101 and the cathode 102, and an auxiliary layer 104 disposed between the hole functional layer 103 and the cathode 102. The auxiliary layer 104 is made of a first metal oxide, and the surface of the first metal oxide is adsorbed and / or bonded with a first electron-donating group.

[0055] In the optoelectronic device 10 of this application embodiment, the auxiliary layer 104 includes a first metal oxide. The surface of the first metal oxide is adsorbed and / or bonded with a first electron-donating group. The first electron-donating group has a strong electron-donating ability, which can reduce the hole injection barrier, thereby increasing the hole injection level and promoting the electron-hole transport balance, thereby improving the device efficiency and device lifetime of the optoelectronic device 10.

[0056] Furthermore, since the surface of the first metal oxide is adsorbed and / or bonded with first electron-donating groups, the first metal oxide has a smaller number of defect states and can reduce the number of defect states at the interface between the auxiliary layer 104 and adjacent film layers, so that the auxiliary layer 104 has good performance stability, which is beneficial to improving the performance stability of the optoelectronic device 10.

[0057] In some embodiments of this application, the auxiliary layer 104 includes a first surface and a second surface disposed opposite to each other. The first surface is closer to the hole functional layer 103 than the second surface. Along the direction from the first surface to the second surface, the content of the first electron-donating group in the auxiliary layer 104 tends to decrease. Since the material of the hole functional layer 103 is a hole-rich material, the first electron-donating group can bind to the side of the hole functional layer 103 near the first surface through chemical bonds or adsorption. The first electron-donating group and / or the second electron-donating group will cause the electron cloud to deviate from the functional group, thereby enhancing the conjugation effect of the intrinsic material, weakening energy level oscillations, reducing non-adiabatic coupling, suppressing Eh nonradiative recombination, and the first electron-donating group will cause electrons to be donated continuously, enhancing the intermolecular interaction, promoting intermolecular charge transfer, thereby improving the hole mobility of the optoelectronic device 10. Furthermore, the introduction of the first electron-donating group can raise the valence band energy level of the first metal oxide, and the number of the first electron-donating groups in the auxiliary layer 104 decreases along the direction from the first surface to the second surface, thereby forming a gradient energy level and further improving the hole injection level of the optoelectronic device 10.

[0058] It is understood that in some embodiments of this application, the auxiliary layer 104 further includes a first metal oxide on which a first electron-donating group is not adsorbed and / or bonded.

[0059] In some embodiments of this application, the first electron-donating group includes one or more of -NH2, -N(R1)(R2), -NHR3, -OH, -NHCOR4, -OCOR5, alkyl groups having 1 to 30 carbon atoms, and phenyl groups; wherein, each time R1, R2, R3, R4, and R5 appear, they are each independently selected from alkyl groups having 1 to 30 carbon atoms, for example, they are each independently selected from alkyl groups having 1 to 20 carbon atoms, alkyl groups having 1 to 15 carbon atoms, alkyl groups having 1 to 10 carbon atoms, alkyl groups having 1 to 6 carbon atoms, or alkyl groups having 1 to 3 carbon atoms.

[0060] In at least one embodiment of this application, R1, R2, R3, R4, and R5 are each independently selected from methyl, ethyl, propyl, butyl, pentyl, or hexyl when they appear. Examples of R1, R2, R3, R4, and R5 are each independently selected from methyl, such that the first electron-donating group has a strong electron-donating effect.

[0061] To further improve the hole injection level of the optoelectronic device 10, in some embodiments of this application, the first metal oxide is selected from p-type metal oxide nanoparticles, including but not limited to one or more of the following: molybdenum oxide, vanadium oxide, nickel oxide, tungsten oxide, copper oxide, hafnium oxide, and chromium oxide; the average particle size of the first metal oxide is 2 nm to 50 nm, for example, it can be 2 nm, 5 nm, 8 nm, 10 nm, 30 nm, 50 nm or any two of the aforementioned values, so that the first metal oxide has good dispersibility and conductivity in the auxiliary layer 104.

[0062] In some embodiments of this application, the thickness of the auxiliary layer 104 is 10nm to 100nm, for example, it can be 10nm, 30nm, 50nm, 80nm, 100nm or any two of the aforementioned values, which can improve the hole injection level of the optoelectronic device 10 while controlling the overall thickness of the optoelectronic device 10 within a suitable range.

[0063] In the optoelectronic device 10 of this application embodiment, the hole functional layer 103 can be a single-layer structure or a multi-layer structure. When the hole functional layer 103 is a multi-layer structure, the hole functional layer 103 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For a hole functional layer 103 including a hole injection layer, a hole transport layer, and an electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode 101 than the electron blocking layer. For a hole functional layer 103 including a hole transport layer and an electron blocking layer, the hole transport layer is closer to the anode 101 than the electron blocking layer. For a hole functional layer 103 including a hole injection layer and a hole transport layer, the hole injection layer is closer to the anode 101 than the hole transport layer. The thickness of the hole functional layer 103 is, for example, 10 nm to 100 nm.

[0064] In some embodiments of this application, the hole functional layer 103 is made of one or more organic and inorganic materials. The organic materials include, but are not limited to, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium phthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (CAS No. 105598-27-4), polyaniline (CAS No. 25233-30-1), and polypyrrole (…). CAS No. 30604-81-0), 3-hexyl-substituted polythiophene (CAS No. 104934-50-1), poly(9-vinylcarbazole) (abbreviated as PVK, CAS No. 25067-59-8), 4,4'-bis(9-carbazole)biphenyl (abbreviated as CBP, CAS No. 58328-31-7), poly[bis(4-phenyl)(4-butylphenyl)amine] (abbreviated as Poly-TPD, CAS No. 472960-35-3), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (abbreviated as TAPC, CAS No. 58473-78-2), poly[(9,9-dioctylfluorenyl-2,7-diyl) -Co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (abbreviated as TFB, CAS No. 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)] (CAS No. 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), 4,4',4”-tris(carbazole-9-yl)triphenylamine (abbreviated as TCTA, CAS No. 139092-78-7), 4,4',4'-tris(2-naphthalene) N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB, CAS No. 123847-85-8), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-Diamine (Spiro-TPD, CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTTA, CAS No. 1333317-99-9), 2,2',7,7'-tetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-omeTAD, CAS No. 207739-72-8), N,N,N',N'-tetraarylbenzidine One or more of the following: (CAS No. 15546-43-7), 4,4',4”-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), N,N'-diphenyl-N,N'-di-[4-(N,N-diphenylamino)phenyl]benzidine (CAS No. 167218-46-4), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (CAS No. 138184-36-8), and poly[2-methoxy-5-[(3,7-dimethyloctyloxy)-1,4-phenyl]-1,2-vinyldiyl] (CAS No. 177716-59-5).

[0065] The first inorganic material includes, but is not limited to, one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide. The second inorganic material includes one or more doped first compounds. The main compound of the doped first compound includes graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, or tungsten sulfide. The doping element of the doped first compound is selected from one or more of boron, nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metals. The molar amount of the doping element accounts for less than or equal to 50% of the total molar amount of the doped first compound.

[0066] In at least one embodiment of this application, see further reference. Figure 1 The hole functional layer 103 includes a hole injection layer 1031 and a hole transport layer 1032 stacked together, with the hole injection layer 1031 being closer to the anode 101 than the hole transport layer 1032.

[0067] In some embodiments of this application, the optoelectronic device 10 is a light-emitting device; see further details. Figure 1The optoelectronic device 10 also includes a light-emitting layer 105 and an electronic functional layer 106, with the light-emitting layer 105 being closer to the auxiliary layer 104 than the electronic functional layer 106. The auxiliary layer 104 can reduce the hole injection barrier between the hole functional layer 103 and the light-emitting layer 105.

[0068] The material of the light-emitting layer 105 includes quantum dots, and the thickness of the light-emitting layer 105 is, for example, 10 nm to 100 nm. In terms of the emission color of the quantum dots, the quantum dots include, but are not limited to, one or more of red quantum dots (emission wavelength 600 nm to 720 nm), green quantum dots (emission wavelength 500 nm to 580 nm), and blue quantum dots (emission wavelength 450 nm to 490 nm). In terms of the structural composition of the quantum dots, the quantum dots include, but are not limited to, one or more of single-component quantum dots, core-shell structured quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, wherein the shell of the core-shell structured quantum dots has one or more shells. The average particle size of the quantum dots can be, for example, 2 nm to 30 nm, with examples being 2 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, or any two of the aforementioned values.

[0069] For single-component quantum dots and core-shell quantum dots, the material of the single-component quantum dot, the material of the core of the core-shell quantum dot, or the material of the shell of the core-shell quantum dot includes, but is not limited to, at least one of group II-VI compounds, group III-V compounds, group III-VI compounds, group IV-VI compounds, or group I-III-VI compounds. Among them, the II-VI group compounds include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. III-VI group compounds include, but are not limited to, one or more of In2S3, In2Se3, InGaS3, and InGaSe3. III-V group compounds include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. Group IV-VI compounds include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. Group I-III-VI compounds include, but are not limited to, one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2.

[0070] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. It should be noted that in the core-shell structured quantum dots, " / " represents a shell. Taking CdSe / CdSeS / CdS as an example, CdSe is the quantum dot core, CdSeS is the first shell, and CdS is the second shell.

[0071] For inorganic perovskite quantum dots, the general structural formula is QJT3, where Q is Cs. + J is a divalent metal cation, and each occurrence of J is independently selected from Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ T is a halide anion, and each time T appears, it is independently selected from Cl. - ,Br - Or I - .

[0072] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is LJT3, where L is a formamidinyl group, and the range of choices for J and T is as described above.

[0073] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is GJT3, where G is selected from organic amine cations, including but not limited to CH3(CH2). n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+(n≥2), the selection range of J and T is described above. When n=2, the inorganic metal halide octahedrons JT64- are connected by a common vertex, the metal cation J is located at the body center of the halogen octahedron, and the organic amine cation G fills the gaps between the octahedrons, forming an infinitely extended three-dimensional structure; when n>2, the inorganic metal halide octahedrons JT64- connected by a common vertex extend in the two-dimensional direction to form a layered structure, with organic amine cation bilayers (protonated monoamines) or organic amine cation monolayers (protonated diamines) inserted between the layers, and the organic and inorganic layers overlap to form a stable two-dimensional layered structure.

[0074] It is understandable that the surface of the quantum dot can also be connected to a second ligand, which can be a ligand commonly used in the field, including but not limited to C1 to C2. 30 aliphatic carboxylic acid ligands, C6-C 30 Aromatic carboxylic acid ligands, C1-C 30 Aliphatic thiol ligands, C6-C 30 Thiol aromatic ligands, C1-C 30 fatty amine ligands, C6-C 30 Aromatic amine ligands, C1-C 30 Aliphatic phosphine ligands, C6~C 30 Aromatic phosphine ligands and C6-C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0075] Among them, C1~C 30 The aliphatic carboxylic acid ligands include, but are not limited to, one or more of the following: octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, teicosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; C6~C 30 Aromatic carboxylic acid ligands include, but are not limited to, one or more of benzoic acid, biphenylic acid, and 1-naphthoic acid. (C1-C2) 30 The aliphatic thiol ligands include, but are not limited to, one or more of hexamethylenetetramine, octanethiol, nonanethiol, decanethiol, undecylthiol, dodecathiol, hexadecylthiol, and octadecylthiol, C6–C6. 30 Thiol aromatic ligands include, but are not limited to, one or more of benzenethiol, triphenylmethanethiol, and p-terphenyl-4,4”-dithiol. C1~C 30 The aliphatic amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, trideamine, tetradeamine, pentadecylamine, hexadecylamine, heptadecanamine, octadecylamine, and oleylamine, C6-C6. 30The aromatic amine ligands include, but are not limited to, one or more of aniline, indenepropylamine, 4-octylaniline, and benzidine. (C1-C2) 30 The aliphatic phosphine ligands include, but are not limited to, one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, and tridecylphosphine oxide, C6–C6. 30 Aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphineethyl)phenylphosphine and triphenylphosphine oxide, C6-C6. 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and ethyl diphenyl phosphate. Halogen ligands include, but are not limited to, -Cl, -F, -I, or -Br.

[0076] In the optoelectronic device 10 of this application embodiment, the electronic functional layer 106 can be a single-layer structure or a multi-layer structure. When the electronic functional layer 106 is a multi-layer structure, it includes, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For an electronic functional layer 106 including an electron injection layer, an electron transport layer, and a hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the hole blocking layer is closer to the anode 101 than the electron injection layer. For an electronic functional layer 106 including an electron transport layer and a hole blocking layer, the hole blocking layer is closer to the anode 101 than the electron transport layer. For an electronic functional layer 106 including an electron injection layer and an electron transport layer, the electron transport layer is closer to the anode 101 than the electron injection layer. The thickness of the electronic functional layer 106 is, for example, 10 nm to 100 nm.

[0077] The material of the electronic functional layer 106 includes, but is not limited to, one or more of a third inorganic material and a fourth inorganic material. The third inorganic material includes one or more of an undoped second metal oxide, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, a group IB-IIIA-VIA semiconductor material, ZrSiO4, BaTiO3, BaZrO3, and Si3N4. The undoped second metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2. The group IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe, and CdS. The group IIIA-VA semiconductor material is selected from one or more of InP and GaP. The group IB-IIIA-VIA semiconductor material is selected from one or more of CuInS and CuGaS. The fourth inorganic material includes one or more doped second compounds, the general formula of which is A. (1-x) M xE, where x is greater than zero and not greater than 0.5 each time it appears, A and M are different, and A and M are each independently selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ga, Li, Ga, In, Fe, Mn and Y each time they appear, and E is each independently selected from S or O each time it appears.

[0078] In some embodiments of this application, the doped second compound is selected from Zn. (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O, Ti (1-x) Li x O, Ti (1-x) Mn x O, Ti (1-x) Mg x O, Ti (1-x) Fe x O and Zn (1-x) In x One or more of S.

[0079] In order to further reduce the hole injection barrier between the hole functional layer 103 and the light-emitting layer 105, thereby improving the hole injection efficiency and hole injection level, in some embodiments of this application, the absolute value of the valence band of the auxiliary layer 104 is greater than the absolute value of the HOMO level or valence band of the hole transport layer 1032, and the absolute value of the valence band of the auxiliary layer 104 is less than the absolute value of the valence band of the light-emitting layer 105.

[0080] In some embodiments of this application, the absolute values ​​of the HOMO level or valence band of the hole transport layer 1032 are 5.30 eV to 5.70 eV, for example, 5.20 eV, 5.50 eV, 5.70 eV, or any two of the aforementioned values. The material of the hole transport layer 1032 is selected, for example, from poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[bis(4-phenyl)(4-butylphenyl)amine], poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(9-vinylcarbazole), polytriphenylamine, 4,4',4”-tris(carbazole-9- One or more of the following: triphenylamine, 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], N,N′-bis(1-nayl)-N,N′-diphenyl-1,1′-diphenyl-4,4′-diamine, and 4,4'-bis(N-carbazole)-1,1'-biphenyl.

[0081] In some embodiments of this application, the absolute value of the valence band of the auxiliary layer 104 is 5.70 eV to 6.20 eV, for example, 5.70 eV, 6.0 eV, 6.20 eV, or any two of the aforementioned values. The first metal oxide is selected, for example, from one or more oxides of molybdenum and oxides of vanadium.

[0082] In some embodiments of this application, the absolute value of the valence band of the quantum dot is 6.2 eV to 6.8 eV. When the emission wavelength of the quantum dot is 600 nm to 720 nm, the absolute value of the valence band of the quantum dot is 6.2 eV to 6.4 eV, for example, it can be 6.2 eV, 6.3 eV, 6.4 eV or any two of the aforementioned values; when the emission wavelength of the quantum dot is 500 nm to 580 nm, the absolute value of the valence band of the quantum dot is 6.3 eV to 6.6 eV, for example, it can be 6.3 eV, 6.4 eV, 6.5 eV, 6.6 eV or any two of the aforementioned values; when the emission wavelength of the quantum dot is 450 nm to 490 nm, the absolute value of the valence band of the quantum dot is 6.5 eV to 6.8 eV, for example, it can be 6.5 eV, 6.6 eV, 6.7 eV, 6.8 eV or any two of the aforementioned values.

[0083] In some embodiments of this application, the materials of the anode 101 and the cathode 102 are independently selected from one or more of metals, carbon materials, third metal oxides, metal fluorides, metal carbonates, and metal sulfides. The metals include, but are not limited to, one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg. The carbon materials include, but are not limited to, one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The third metal oxides include, but are not limited to, one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), TiO2, SnO2, ZnO, and In2O3. The metal fluorides include, but are not limited to, one or more of LiF, BaF2, and CsF. The metal carbonates include, but are not limited to, CaCO3. The metal sulfides include, but are not limited to, ZnS.

[0084] The anode 101 and the cathode 102 can also be composite electrodes. The composite electrode can be a double-layer structure or have a "sandwich"-like structure. The material of each layer in the composite electrode is independently selected from one or more of the following: metal, carbon material, third metal oxide, metal fluoride, metal carbonate and metal sulfide. The composite electrode with a bilayer structure includes, but is not limited to, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, or CaCO3 / Al. ​​Composite electrodes with a sandwich-like structure include, but are not limited to, one or more of BaF2 / Ca / Al, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. The thickness of the intermediate layer does not exceed 35 nm. The thickness of the anode 101 can be, for example, 20 nm to 200 nm, and the thickness of the cathode 102 can be, for example, 20 nm to 200 nm.

[0085] It is understood that the optoelectronic device 10 may also include a substrate, which is disposed on the side of the anode 101 away from the hole functional layer 103 or the side of the cathode 102 away from the electron functional layer 106. The substrate may be a rigid substrate or a flexible substrate. The material of the rigid substrate includes, but is not limited to, one or more of glass, ceramic and silicon wafer. The material of the flexible substrate includes, but is not limited to, one or more of polyimide, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate and polyethersulfone.

[0086] This application also provides a method for fabricating an optoelectronic device, which can be used to fabricate the optoelectronic device described above, including the following steps:

[0087] S1. Provide a first electrode and form a hole functional layer on one side of the first electrode;

[0088] S2. A second electrode is formed on the side of the hole functional layer away from the first electrode.

[0089] Wherein, when the first electrode is an anode and the second electrode is a cathode, after the step of forming the hole functional layer and before the step of forming the second electrode, the method for fabricating the optoelectronic device further includes the step of forming an auxiliary layer on the side of the hole functional layer away from the first electrode, and forming the second electrode on the side of the auxiliary layer away from the hole functional layer; or, when the first electrode is a cathode and the first electrode is an anode, before the step of forming the hole functional layer, the method for fabricating the optoelectronic device further includes the step of forming an auxiliary layer on one side of the first electrode, and forming the hole functional layer on the side of the auxiliary layer away from the first electrode.

[0090] The method for preparing the auxiliary layer includes the steps of: depositing a composition, and then heat-treating the deposited composition to obtain the auxiliary layer; the auxiliary layer includes an organometallic compound, a fuel, and a solvent, wherein the organometallic compound includes a second electron-donating group, the organometallic compound includes a first metal element, and the fuel is an oxygen-containing reducing agent.

[0091] In the above preparation method, the composition can be used to prepare an auxiliary layer through combustion synthesis. The composition can be first prepared to form a wet film, and then converted into an auxiliary layer including a first metal oxide at a lower temperature through combustion synthesis reaction. Since the combustion synthesis reaction is exothermic, no external energy input is required once ignited. The self-generated synthesis heat provides local energy supply, and film can be formed without long-term high-temperature treatment, effectively reducing the preparation cost. Using organometallic compounds containing a second electron-donating group as raw material has several advantages. First, the second electron-donating group has a strong electron-donating ability, which causes the electron cloud to deviate from the functional group, thereby enhancing the conjugation effect of the intrinsic material, weakening energy level oscillations, and reducing non-adiabatic coupling, thus improving the hole mobility of the auxiliary layer. Second, the formation of the auxiliary layer follows a top-down crystallization process, starting from the top surface of the wet film, with the residual solvent gradually evaporating and crystallizing downwards. As the residual solvent evaporates, the wet film gradually crystallizes to form a first metal oxide. At least some of the second electron-donating groups will bind to the surface of the first metal oxide, which can increase the distance between crystals, effectively improve the phenomenon of crystallization agglomeration, thereby reducing the number of defect states of the first metal oxide, improving the film quality and the performance stability of the auxiliary layer.

[0092] In some embodiments of this application, the optoelectronic device is preferably of an upright structure, i.e., the first electrode is the anode and the second electrode is the cathode. Since the formation of the auxiliary layer follows a top-down crystallization process, during the formation of the auxiliary layer, the metal salt containing the second electron-donating group is pushed downwards and concentrated on the surface of the lower functional layer (hole functional layer). The second electron-donating group may bind to the surface of the hole functional layer through chemical bonds and / or adsorption, resulting in a gradient distribution of the second electron-donating group in the auxiliary layer. This second electron-donating group can raise the valence band position of the first metal oxide, thereby enabling the auxiliary layer to have a gradient energy level, reducing the hole injection barrier, and effectively improving the hole injection level of the optoelectronic device.

[0093] In the above-mentioned method for preparing the auxiliary layer, the deposition method of the composition includes, but is not limited to, one or more of the following: spin coating deposition, inkjet printing deposition, blade coating deposition, dip-coating deposition, immersion deposition, spraying deposition, roller coating deposition, casting deposition, slot coating deposition, and strip coating deposition. The heat treatment can be performed in an air or oxygen atmosphere.

[0094] In some embodiments of this application, the heat treatment temperature is 120°C to 250°C, for example, it can be 120°C, 150°C, 180°C, 200°C, 230°C, 250°C or any two of the aforementioned values. The heat treatment within the aforementioned temperature range can induce the organometallic compound to undergo a combustion synthesis reaction with the fuel to form the first metal oxide, while avoiding excessively high temperatures that could cause the first metal oxide to agglomerate and / or generate other impurities.

[0095] In some embodiments of this application, the heat treatment time is 20 min to 40 min, for example, it can be 20 min, 25 min, 30 min, 35 min, 40 min, or any range between the aforementioned two values. Since organometallic compounds can undergo combustion synthesis reactions with fuels, and combustion synthesis is exothermic, once ignited, no external energy input is required. The self-generated heat of synthesis provides local energy supply, eliminating the need for prolonged high external processing temperatures. Therefore, the heat treatment time is relatively short, which can reduce costs and avoid damage to the substrate from high temperatures.

[0096] In some embodiments of this application, the first metallic element includes one or more of molybdenum and vanadium, and the organometallic compound includes one or more of organomolybdenum compounds and organovanadium compounds.

[0097] In some embodiments of this application, the molybdenum organic compound is selected from one or more of tris(N-butylene-3,5-dimethylaniline)molybdenum (CAS No. 236740-70-8), bis(tert-butylimino)bis(dimethylamino)molybdenum (VI) (CAS No. 923956-62-1), and tris(N-tert-butyl-3,5-dimethylaniline)molybdenum (III) (CAS No. 236740-70-8), so that the second electron-donating group has a strong electron-donating ability.

[0098] In some embodiments of this application, the vanadium organic compound is selected from one or more of tetra(dimethylamino)vanadium(IV) (CAS No. 19824-56-7), tetra(diethylamino)vanadium(IV) (CAS No. 219852-96-7), octaethylporphyrinoxanium vanadium (CAS No. 27860-55-5), and tetra(ethylmethylamino)vanadium(IV) (CAS No. 791114-66-4), so that the second electron-donating group has a strong electron-donating ability.

[0099] In some embodiments of this application, the second electron-donating group independently includes one or more of -NH2, -N(R1)(R2), -NHR3, -OH, -NHCOR4, -OCOR5, alkyl groups having 1 to 30 carbon atoms, and phenyl groups; wherein the selection range of R1, R2, R3, R4, and R5 is as described above.

[0100] In the compositions of this application embodiment, the fuel can promote the combustion synthesis reaction, reduce the temperature required for the reaction, and improve the crystallinity of the first metal oxide. Without fuel, it would be impossible to crystallize into a film at a lower temperature (e.g., below 200°C).

[0101] In some embodiments of this application, the fuel includes one or more of peroxides, compounds represented by formula R7-COOH, and compounds represented by formula R8-NH2.

[0102] In some embodiments of this application, the composition further includes additives, including ketone compounds. These additives effectively prevent the aggregation of organometallic compounds into large clusters, thereby improving the agglomeration of the first metal oxide crystals and forming an amorphous or glassy state with enhanced film-forming ability, thus improving the film-forming quality of the auxiliary layer. Ketone compounds, for example, are of the formula... The compound shown.

[0103] Among them, R7, R8, R9 and R 10Each time it appears, it is independently selected from unsubstituted or substituted with at least one R C1-C30 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1-C30 aliphatic hydroxyl group, unsubstituted or substituted with at least one R aliphatic cyclic hydrocarbon group having 3 to 30 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms, unsubstituted or substituted with at least one R aryl group having 6 to 30 ring atoms, and unsubstituted or substituted with at least one R heteroaryl group having 5 to 30 ring atoms. Or a combination of the aforementioned groups; R 11 and R 13 Each time it appears, it is independently selected from single bonds, unsubstituted or substituted with at least one R C1-C30 aliphatic subchain hydrocarbon groups, unsubstituted or substituted with at least one R C1-C30 aliphatic subchain hydroxyl groups, unsubstituted or substituted with at least one R aliphatic subcyclic hydrocarbon groups with 3 to 30 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon groups with 3 to 30 ring atoms, unsubstituted or substituted with at least one R aryl groups with 6 to 30 ring atoms, unsubstituted or substituted with at least one R heterocyclic hydrocarbon groups with 5 to 30 ring atoms, *-O-*, or combinations of the foregoing groups; R 12 and R 14 Each time it appears, it is independently selected from unsubstituted or substituted with at least one R aliphatic chain hydrocarbon group of C1 to C30, unsubstituted or substituted with at least one R aliphatic chain hydroxyl group of C1 to C30, unsubstituted or substituted with at least one R aliphatic cyclic hydrocarbon group of 3 to 30 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group of 3 to 30 ring atoms, unsubstituted or substituted with at least one R aryl group of 6 to 30 ring atoms, unsubstituted or substituted with at least one R heteroaryl group of 5 to 30 ring atoms, or a combination of the aforementioned groups; each time R appears, it is independently selected from -D, C1 to C20 aliphatic chain hydrocarbon group, C1 to C20 aliphatic chain hydroxyl group, hydroxyl group, carboxyl group, amino group, or a combination of the aforementioned groups.

[0104] In some embodiments of this application, R7 and R8 are each independently selected from unsubstituted or substituted with at least one R C1-C10 aliphatic chain hydrocarbon group and unsubstituted or substituted with at least one R C1-C10 aliphatic hydrocarbon oxygen group.

[0105] As an example, fuels include one or more of hydrogen peroxide, urea, glycine, citric acid, and tris(hydroxymethyl)aminomethane.

[0106] In some embodiments of this application, the mass ratio of the organometallic compound to the fuel in the composition is 1:(0.04 to 0.08), for example, it can be 1:0.04, 1:0.05, 1:0.06, 1:0.07, 1:0.08 or any two of the aforementioned values. Within the aforementioned ratio range, the fuel and the organometallic compound can undergo a sufficient combustion synthesis reaction with a high yield, and the first metal oxide obtained has a high hole mobility and performance stability.

[0107] In some embodiments of this application, R9 and R 10 Each occurrence is independently selected from unsubstituted or substituted with at least one R C1-C10 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1-C10 aliphatic alkyl group, Or a combination of the aforementioned groups; R 11 and R 13 Each time it appears, it is independently selected from single bonds, unsubstituted or C1-C10 aliphatic subchain hydrocarbon groups substituted with at least one R, unsubstituted or C1-C10 aliphatic subchain hydroxyl groups substituted with at least one R, or combinations of the aforementioned groups; R 12 and R 142 Each time it appears, it is independently selected from unsubstituted or substituted with at least one R C1-C10 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1-C30 aliphatic chain hydroxyl group, or a combination of the aforementioned groups.

[0108] As an example, the additives include one or more of acetylacetone, 1,3-diacetoxyacetone, 2,3-butanedione, 2,3-pentanedione, 2,3-hexanedione, 2,3-heptanedione, and 2,3-octanedione.

[0109] In some embodiments of this application, the mass ratio of organometallic compound to additive in the composition is 1:(0.04 to 0.06), for example, it can be 1:0.04, 1:0.05, 1:0.06 or any two of the aforementioned values. Within the aforementioned ratio range, it is possible to effectively prevent the organometallic compound from agglomerating and avoid the waste of additives.

[0110] In some embodiments of this application, the solvent includes one or more of methanol, ethanol, n-propanol, isopropanol, n-butanol, tert-butanol, pentanol, glycerol, methoxyethanol, N,N-dimethylformamide, and dimethyl sulfoxide. It is understood that the amount of solvent used is not limited, as long as it is sufficient to fully dissolve the organometallic compound, additives, and fuel therein. In at least one embodiment of this application, the concentration of the organometallic compound in the composition is 10 mg / mL to 40 mg / mL, for example, it can be 10 mg / mL, 20 mg / mL, 30 mg / mL, 40 mg / mL, or a range between any two of the aforementioned values.

[0111] In some embodiments of this application, when the first electrode is an anode and the second electrode is a cathode, after the step of forming the auxiliary layer and before the step of forming the second electrode, the method for fabricating the optoelectronic device further includes the steps of: sequentially forming a light-emitting layer and an electronic functional layer on the side of the auxiliary layer away from the hole functional layer, and forming the second electrode on the side of the electronic functional layer away from the light-emitting layer. The structural composition of the anode, cathode, light-emitting layer and electronic functional layer are respectively described above.

[0112] In some other embodiments of this application, when the first electrode is a cathode and the second electrode is an anode, the method for fabricating the optoelectronic device further includes the step of sequentially forming an electronic functional layer and a light-emitting layer on one side of the first electrode before forming the auxiliary layer, and forming the auxiliary layer on the side of the light-emitting layer away from the electronic functional layer. The structural composition of the anode, cathode, light-emitting layer and electronic functional layer are respectively described above.

[0113] It should be noted that, apart from the auxiliary layer, the fabrication methods for other functional layers in optoelectronic devices include, but are not limited to, chemical and / or physical methods. Chemical methods include, but are not limited to, one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include, but are not limited to, physical deposition and solution methods. Physical deposition methods include, but are not limited to, one or more of thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. Solution methods include, but are not limited to, one or more of spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spray coating, roller coating, casting, slot coating, and strip coating. After fabricating each functional layer of the optoelectronic device, an encapsulation process is required. Encapsulation can be performed using common machine encapsulation or manual encapsulation. In the encapsulation environment, the oxygen and water content are both below 0.1 ppm to ensure the stability of the optoelectronic device. Specifically, the encapsulation material used to form the encapsulation layer is selected from one or more of UV adhesive, metal film and glass adhesive. For example, the encapsulation material is acrylic resin or epoxy resin.

[0114] This application also provides an electronic device, which includes the optoelectronic device as described above, or an optoelectronic device prepared by the method described above. For example, the electronic device includes a display panel comprising a plurality of pixel units arranged in an array, each pixel unit including the optoelectronic device as described above, or an optoelectronic device prepared by the method described above. The electronic device can be any electronic product with display functionality, including but not limited to smartphones, tablet personal computers, mobile phones, video phones, e-book readers, laptop PCs, netbook computers, workstations, servers, personal digital assistants, portable multimedia players, MP3 players, mobile medical devices, cameras, game consoles, digital cameras, car navigation systems, electronic billboards, ATMs, smart bracelets, smartwatches, virtual reality (VR) devices, or wearable devices.

[0115] The technical solutions and effects of this application will be described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of this application and are not intended to limit this application.

[0116] In the specific embodiments and comparative examples below, the valence bands of both metal oxides and quantum dots were obtained by detecting the valence band (VB) spectrum using a monochromatic He I light source (21.2 eV) and a VG Scienta R4000 analyzer. The test sample was a thin film formed by preparing the metal oxide or quantum dot to be measured. The size of the thin film was 6 mm long × 6 mm wide × 1.5 mm thick. The sample bias voltage was -5 V, and the secondary electron cutoff edge spectrum was measured.

[0117] Example 1

[0118] This embodiment provides an optoelectronic device and its fabrication method. The optoelectronic device is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 1As shown, from bottom to top, the optoelectronic device 10 includes an anode 101, a hole functional layer 103, an auxiliary layer 104, a light-emitting layer 105, an electron functional layer 106, and a cathode 102, stacked sequentially. The hole functional layer 103 includes a hole injection layer 1031 and a hole transport layer 1032, stacked sequentially, with the hole injection layer 1031 closer to the anode 101 than the hole transport layer 1032. The light-emitting area of ​​the optoelectronic device 10 is 3.14 mm². 2 .

[0119] The materials and thicknesses of each layer in optoelectronic device 10 are as follows:

[0120] The anode 101 is made of ITO and has a thickness of 50 nm.

[0121] The cathode 102 is made of Ag and has a thickness of 100 nm.

[0122] The hole injection layer 1031 is made of PEDOT:PSS and has a thickness of 10nm.

[0123] The hole transport layer 1032 is made of TFB (CAS No. 220797-16-0), the absolute value of the HOMO level of TFB is 5.4 eV, and the thickness of the hole transport layer 1032 is 10 nm.

[0124] The auxiliary layer 104 is made of vanadium oxide, the absolute value of the valence band of the vanadium oxide is 6.10 eV, and the surface of the vanadium oxide is adsorbed and / or bonded with a first electron-donating group, the first electron-donating group including tetrakis(diethylamino); the auxiliary layer 104 includes a first surface and a second surface disposed opposite to each other, the first surface is closer to the hole transport layer 1032 than the second surface, and the content of the first electron-donating group in the auxiliary layer 104 decreases along the direction from the first surface to the second surface; the thickness of the auxiliary layer 104 is 30 nm;

[0125] The material of the light-emitting layer 105 includes Cd 0.5 Zn 0.5 Se / Cd 0.2 Zn 0.8 S / Cd 0.2 Zn 0.8 S / ZnS quantum dots, the quantum dots emit green light at a wavelength of 544 nm, the average particle size of the quantum dots is 15 nm, the absolute value of the valence band of the quantum dots is 6.55 eV, and the thickness of the 105 light-emitting layer is 15 nm.

[0126] The material of electronic functional layer 106 includes nano-Zn 0.85 Mg 0.15O (average particle size is 5nm), and the thickness of the electronic functional layer 106 is 25nm.

[0127] The method for fabricating the optoelectronic device in this embodiment includes the following steps:

[0128] S1.1 Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a small amount of soapy water using a cotton swab to remove visible impurities, and then sequentially ultrasonically clean the substrate including ITO with detergent for 20 min, ultrasonically clean with acetone for 20 min, ultrasonically clean with deionized water for 20 min, and ultrasonically clean with ethanol for 20 min. After drying, treat with oxygen plasma for 10 min, and then treat with ultraviolet-ozone surface for 15 min to obtain a substrate including an anode.

[0129] S1.2 Under normal temperature and pressure air environment, spin-coat PEDOT:PSS aqueous solution on the side of the anode away from the substrate, and then heat-treat the spin-coated PEDOT:PSS aqueous solution at 150℃ for 30 min under air environment to obtain hole injection layer.

[0130] S1.3 Under a nitrogen atmosphere at normal temperature and pressure, spin-coat a TFB solution on the side of the hole injection layer away from the anode. The solvent of the TFB solution is chlorobenzene, and the concentration of TFB in the TFB solution is 6 mg / mL. Then, the spin-coated TFB solution is subjected to a constant temperature heat treatment of 120℃ for 40s in a nitrogen atmosphere to obtain the hole transport layer.

[0131] S1.4. Under normal temperature and pressure air environment, spin-coat the composition on the side of the hole transport layer away from the hole injection layer, and then heat-treat the spin-coated composition at 160℃ for 30 minutes in air environment to obtain the auxiliary layer.

[0132] S1.5 Under a nitrogen atmosphere at normal temperature and pressure, spin-coat a quantum dot solution on the side of the auxiliary layer away from the hole transport layer. The concentration of quantum dots in the quantum dot solution is 30 mg / mL, and the solvent of the quantum dot solution is n-octane. Then, the spin-coated quantum dot solution is subjected to a constant temperature heat treatment of 100°C for 5 min in a nitrogen atmosphere to obtain the light-emitting layer.

[0133] S1.6 Under a nitrogen atmosphere at room temperature and pressure, spin-coat nano-Zn onto the side of the light-emitting layer furthest from the auxiliary layer. 0.85 Mg 0.15 O solution, nano Zn 0.85 Mg 0.15 Nano Zn in O solution 0.85 Mg 0.15 The concentration of O is 30 mg / mL, and the nano-Zn 0.85 Mg 0.15 The solvent for the O solution was ethanol, and then the spin-coated nano-Zn was applied under a nitrogen atmosphere.0.85 Mg 0.15 The electronic functional layer was obtained by heat treatment at 100℃ for 15 minutes in O solution.

[0134] S1.7 Place the laminated structure obtained after completing step S1.6 in a vacuum environment with a vacuum level not exceeding 3 × 10⁻⁶. -4 In the vapor deposition chamber of Pa, Ag is thermally vaporized on the side of the electronic functional layer away from the light-emitting layer through a mask to obtain the cathode, and then encapsulated with epoxy resin to obtain the optoelectronic device.

[0135] The preparation method of the composition in step S1.3 includes the following steps: 300 mg of tetrakis(diethylamino)vanadium(IV) (an organovanadium compound, CAS number 219852-96-7) is dispersed in 10 mL of N,N-dimethylformamide to obtain an organovanadium compound solution with a concentration of 30 mg / mL; then, urea (fuel) and acetylacetone (additive) are added to the organovanadium compound solution, wherein the mass ratio of organovanadium compound to urea is 1:0.04 and the mass ratio of organovanadium compound to acetylacetone is 1:0.05, and the mixture is stirred continuously at room temperature for 2 h to obtain the composition.

[0136] Example 2

[0137] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the only difference in this embodiment is the auxiliary layer. The thickness of the auxiliary layer in this embodiment is the same as that in Embodiment 1.

[0138] Compared to the method for preparing the optoelectronic device in Example 1, the only difference in the method for preparing the optoelectronic device in this example is that the composition used to prepare the auxiliary layer is different. Compared to the method for preparing the composition in Example 1, the only difference in the method for preparing the composition in this example is that the mass ratio of the vanadium organic compound to urea is 1:0.06.

[0139] Example 3

[0140] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the only difference in this embodiment is the auxiliary layer. The thickness of the auxiliary layer in this embodiment is the same as that in Embodiment 1.

[0141] Compared to the method for preparing the optoelectronic device in Example 1, the only difference in the method for preparing the optoelectronic device in this example is that the composition used to prepare the auxiliary layer is different. Compared to the method for preparing the composition in Example 1, the only difference in the method for preparing the composition in this example is that the mass ratio of the vanadium organic compound to urea is 1:0.08.

[0142] Example 4

[0143] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the only difference in this embodiment is the auxiliary layer. The thickness of the auxiliary layer in this embodiment is the same as that in Embodiment 1.

[0144] Compared to the method for preparing the optoelectronic device in Example 1, the only difference in the method for preparing the optoelectronic device in this example is that the composition used to prepare the auxiliary layer is different. Compared to the method for preparing the composition in Example 1, the only difference in the method for preparing the composition in this example is that the mass ratio of the vanadium organic compound to urea is 1:0.06, and the mass ratio of the vanadium organic compound to acetylacetone is 1:0.04.

[0145] Example 5

[0146] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the only difference in this embodiment is the auxiliary layer. The thickness of the auxiliary layer in this embodiment is the same as that in Embodiment 1.

[0147] Compared to the method for preparing the optoelectronic device in Example 1, the only difference in the method for preparing the optoelectronic device in this example is that the composition used to prepare the auxiliary layer is different. Compared to the method for preparing the composition in Example 1, the only difference in the method for preparing the composition in this example is that the mass ratio of the vanadium organic compound to urea is 1:0.06, and the mass ratio of the vanadium organic compound to acetylacetone is 1:0.06.

[0148] Example 6

[0149] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the only difference in this embodiment is the auxiliary layer. The thickness of the auxiliary layer in this embodiment is the same as that in Embodiment 1.

[0150] Compared with the method for preparing the optoelectronic device in Example 1, the only difference in the method for preparing the optoelectronic device in this example is that the composition used to prepare the auxiliary layer is different, and the step S1.4 "to perform a constant temperature heat treatment of the spin-coated composition at 160°C for 30 min in an air environment" is replaced with "to perform a constant temperature heat treatment of the spin-coated composition at 120°C for 30 min in an air environment".

[0151] Compared to the preparation method of the composition in Example 1, the only difference in the preparation method of the composition in this example is that the mass ratio of vanadium organic compound to urea is 1:0.06.

[0152] Example 7

[0153] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the only difference in this embodiment is the auxiliary layer. The thickness of the auxiliary layer in this embodiment is the same as that in Embodiment 1.

[0154] Compared with the method for preparing the optoelectronic device in Example 1, the only difference in the method for preparing the optoelectronic device in this example is that the composition used to prepare the auxiliary layer is different, and the step S1.4 "to perform a constant temperature heat treatment of the spin-coated composition at 160°C for 30 min in an air environment" is replaced with "to perform a constant temperature heat treatment of the spin-coated composition at 200°C for 30 min in an air environment".

[0155] Compared to the preparation method of the composition in Example 1, the only difference in the preparation method of the composition in this example is that the mass ratio of vanadium organic compound to urea is 1:0.06.

[0156] Example 8

[0157] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the only difference of the optoelectronic device in this embodiment is that the auxiliary layer is different and the thickness of the auxiliary layer is 15nm.

[0158] Compared to the method for preparing the optoelectronic device in Example 1, the only difference in the method for preparing the optoelectronic device in this example is that the composition used to prepare the auxiliary layer is different. Compared to the method for preparing the composition in Example 1, the only difference in the method for preparing the composition in this example is that the mass ratio of the vanadium organic compound to urea is 1:0.06.

[0159] Example 9

[0160] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the only difference of the optoelectronic device in this embodiment is that the auxiliary layer is different and the thickness of the auxiliary layer is 40nm.

[0161] Compared to the method for preparing the optoelectronic device in Example 1, the only difference in the method for preparing the optoelectronic device in this example is that the composition used to prepare the auxiliary layer is different. Compared to the method for preparing the composition in Example 1, the only difference in the method for preparing the composition in this example is that the mass ratio of the vanadium organic compound to urea is 1:0.06.

[0162] Example 10

[0163] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the only differences are: the auxiliary layer is different, and the TFB in the hole transport layer is replaced with "Poly-TPD". The CAS number of Poly-TPD is 472960-35-3, and the absolute value of the HOMO energy level of Poly-TPD is 5.50 eV. The thickness of the auxiliary layer and the thickness of the hole transport layer in this embodiment are the same as in Embodiment 1.

[0164] Compared to the method for preparing the optoelectronic device in Example 1, the only difference in the method for preparing the optoelectronic device in this example is that the composition used to prepare the auxiliary layer is different, and all TFBs in step S1.3 are replaced with "Poly-TPD".

[0165] Compared to the preparation method of the composition in Example 1, the only difference in the preparation method of the composition in this example is that the mass ratio of vanadium organic compound to urea is 1:0.06.

[0166] Example 11

[0167] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the difference in this embodiment lies in the auxiliary layer. The surface of the vanadium oxide is adsorbed and / or bonded with a first electron-donating group, which includes tetrakis(dimethylamino). The auxiliary layer 104 includes a first surface and a second surface disposed opposite to each other. The first surface is closer to the hole transport layer 1032 than the second surface. Along the direction from the first surface to the second surface, the content of the first electron-donating group in the auxiliary layer 104 shows a decreasing trend. The thickness of the auxiliary layer of the optoelectronic device in this embodiment is consistent with that in Embodiment 1.

[0168] Compared to the method for preparing the optoelectronic device in Example 1, the only difference in the method for preparing the optoelectronic device in this example is that the composition used to prepare the auxiliary layer is different. Compared to the method for preparing the composition in Example 1, the only difference in the method for preparing the composition in this example is that "tetra(diethylamino)vanadium(IV)" is completely replaced with "tetra(dimethylamino)vanadium(IV) (CAS No. 19824-56-7)," and the mass ratio of the vanadium organic compound to urea is 1:0.06.

[0169] Example 12

[0170] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the difference in this embodiment lies in the auxiliary layer. The auxiliary layer is made of molybdenum oxide, and the absolute value of the valence band of the molybdenum oxide is 5.80 eV. The surface of the molybdenum oxide is adsorbed and / or bonded with a first electron-donating group, which includes a tris(N-butylene-3,5-dimethylaniline) group. The auxiliary layer 104 includes a first surface and a second surface disposed opposite to each other. The first surface is closer to the hole transport layer 1032 than the second surface. Along the direction from the first surface to the second surface, the content of the first electron-donating group in the auxiliary layer 104 decreases. The thickness of the auxiliary layer in this embodiment is the same as that in Embodiment 1.

[0171] Compared to the method for preparing the optoelectronic device in Example 1, the only difference in the method for preparing the optoelectronic device in this example is that the composition used to prepare the auxiliary layer is different.

[0172] The preparation method of the composition in this embodiment includes the following steps: 300 mg of tris(N-butylene-3,5-dimethylaniline)molybdenum (organic molybdenum compound, CAS No. 236740-70-8) is dispersed in 10 mL of N,N-dimethylformamide to obtain a molybdenum organic compound solution with a concentration of 30 mg / mL; then, citric acid (fuel) and 2,3-octanedione (additive) are added to the molybdenum organic compound solution, wherein the mass ratio of molybdenum organic compound to citric acid is 1:0.06, and the mass ratio of molybdenum organic compound to 2,3-octanedione is 1:0.05, and the mixture is stirred continuously at room temperature for 2 h to obtain the composition.

[0173] Example 13

[0174] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the difference lies in the auxiliary layer. The auxiliary layer is made of molybdenum oxide, and the absolute value of the valence band of the molybdenum oxide is 5.80 eV. The surface of the molybdenum oxide is adsorbed and / or bonded with a first electron-donating group, which includes bis(tert-butylimino)bis(dimethylamino). The auxiliary layer 104 includes a first surface and a second surface disposed opposite to each other. The first surface is closer to the hole transport layer 1032 than the second surface. Along the direction from the first surface to the second surface, the content of the first electron-donating group in the auxiliary layer 104 decreases. The thickness of the auxiliary layer of the optoelectronic device in this embodiment is consistent with that in Embodiment 1.

[0175] Compared to the method for preparing the optoelectronic device in Example 1, the only difference in the method for preparing the optoelectronic device in this example is that the composition used to prepare the auxiliary layer is different.

[0176] The preparation method of the composition in this embodiment includes the following steps: 300 mg of bis(tert-butylimino)bis(dimethylamino)molybdenum(VI) (organic molybdenum compound, CAS No. 923956-62-1) is dispersed in 10 mL of N,N-dimethylformamide to obtain an organic molybdenum compound solution with a concentration of 30 mg / mL; then, citric acid (fuel) and 2,3-octanedione (additive) are added to the organic molybdenum compound solution, wherein the mass ratio of organic molybdenum compound to citric acid is 1:0.06, and the mass ratio of organic molybdenum compound to 2,3-octanedione is 1:0.05, and the mixture is stirred continuously at room temperature for 2 h to obtain the composition.

[0177] Example 14

[0178] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the difference in this embodiment is that the green quantum dots in the light-emitting layer are replaced with red quantum dots, and the red quantum dots are Cd. 0.8 Zn 0.2 Se / Cd 0.8 Zn 0.2 S / CdSe / ZnS quantum dots, with an emission wavelength of 621nm, an average particle size of 18nm, a valence band of 6.25eV, and a 105 emitting layer thickness of 15nm.

[0179] Compared to the method for fabricating optoelectronic devices in Example 1, the only difference in the method for fabricating optoelectronic devices in this example is that the quantum dots in step S1.5 are replaced with the red quantum dots of this example.

[0180] Example 15

[0181] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the difference in this embodiment is that the green quantum dots in the light-emitting layer are replaced with blue quantum dots, and the blue quantum dots are Cd. 0.2 Zn 0.8 Se / ZnSe / Cd 0.2 Zn 0.8 The S / ZnS / ZnS quantum dots have an emission wavelength of 469 nm, an average particle size of 11 nm, a valence band of 6.70 eV, and a thickness of 15 nm.

[0182] Compared to the method for fabricating optoelectronic devices in Example 1, the only difference in the method for fabricating optoelectronic devices in this example is that the quantum dots in step S1.5 are replaced with the blue quantum dots of this example.

[0183] Comparative Example 1

[0184] This comparative example provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Example 1, the difference in the optoelectronic device in this comparative example is that the auxiliary layer is omitted.

[0185] Compared to the optoelectronic device in Example 1, the difference in the optoelectronic device in this example is that step S1.4 is omitted, and the descriptions of other steps are adapted.

[0186] Comparative Example 2

[0187] This comparative example provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Example 1, the difference in the optoelectronic device in this comparative example is that the auxiliary layer is omitted, and the red quantum dots in the light-emitting layer are replaced with green quantum dots (the same as the green quantum dots in Example 14).

[0188] Compared to the optoelectronic device in Example 1, the difference in the optoelectronic device in this example is that step S1.5 is omitted, and the quantum dot in step S1.5 is replaced with the green quantum dot in Example 14, while the descriptions of other steps are adapted.

[0189] Comparative Example 3

[0190] This comparative example provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Example 1, the difference in the optoelectronic device in this comparative example is that the auxiliary layer is omitted, and the red quantum dots in the light-emitting layer are replaced with blue quantum dots (the same as the blue quantum dots in Example 15).

[0191] Compared to the optoelectronic device in Example 1, the difference in the optoelectronic device in this example is that step S1.5 is omitted, and the quantum dot in step S1.5 is replaced with the blue quantum dot in Example 15. The descriptions of other steps are adapted accordingly.

[0192] Comparative Example 4

[0193] This comparative example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Example 1, the difference of the optoelectronic device in this comparative example is that the material of the auxiliary layer includes vanadium oxide nanoparticles prepared in this comparative example.

[0194] The preparation method of vanadium oxide nanoparticles in this comparative example includes the following steps: First, vanadium pentoxide, oxalic acid, and deionized water are mixed in a molar ratio of 1.8:1:120 to obtain a mixed solution; then, polyethylene glycol (surfactant) is added to the mixed solution at an amount of 8.5% of the volume of the mixed solution, and the mixture is stirred for 4 hours to obtain a precursor solution; next, the precursor solution is placed in a closed state and reacted at 200°C for 28 hours to obtain a reaction solution; subsequently, the reaction solution is centrifuged at 11000 r / min for 10 min, the supernatant is discarded and the precipitate is collected, and the precipitate is washed successively with deionized water and ethanol, and then annealed at 400°C for 2 hours in a nitrogen atmosphere to obtain vanadium oxide nanoparticles.

[0195] Compared to the method for preparing the optoelectronic device in Example 1, the only difference in the method for preparing the optoelectronic device in this comparative example is that step S1.4 is replaced with "in a nitrogen atmosphere at room temperature and pressure, a dispersion containing vanadium oxide nanoparticles is spin-coated on the side of the hole transport layer away from the hole injection layer. The concentration of vanadium oxide nanoparticles in the dispersion is 20 mg / mL, and the dispersion medium is dimethyl sulfoxide. Then, the spin-coated dispersion is subjected to a constant temperature heat treatment at 150°C for 30 min in a nitrogen atmosphere to obtain an auxiliary layer."

[0196] Comparative Example 5

[0197] This comparative example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Example 1, the difference of the optoelectronic device in this comparative example is that the material of the auxiliary layer includes molybdenum oxide nanoparticles prepared in this comparative example.

[0198] Compared with the method for preparing the optoelectronic device in Example 1, the only difference in the method for preparing the optoelectronic device in this comparative example is that step S1.4 is replaced with "in a nitrogen atmosphere at room temperature and pressure, a molybdenum oxide solution is spin-coated on the side of the hole transport layer away from the hole injection layer, and then the spin-coated dispersion is subjected to a constant temperature heat treatment at 150°C for 30 minutes in a nitrogen atmosphere to obtain an auxiliary layer".

[0199] The preparation method of molybdenum oxide solution includes the following steps: dispersing 10 mmol of molybdenum acetylacetonate and 300 mmol of thiourea in 350 mL of N,N-dimethylformamide to obtain a reaction system; placing the reaction system in a reaction vessel and reacting at 160 °C for 2 h to obtain a reaction product; filtering the reaction product through a 0.22 μm microporous membrane, taking the lower layer liquid and placing it in a dialysis bag with a molecular weight cutoff of 4500, dialyzing for 3 days, and dispersing the precipitate in the dialysis bag in 5 mL of N,N-dimethylformamide to obtain a molybdenum oxide solution.

[0200] Experimental Example

[0201] The performance of the optoelectronic devices in Examples 1 to 15 and Comparative Examples 1 to 5 after 1 hour of encapsulation was tested. The performance tests were conducted at a temperature of 25°C and a relative humidity of 50%.

[0202] The photoelectric performance was tested using the Fostar FPD optical characteristic measurement equipment (an efficiency testing system consisting of components such as Ocean Optics USB2000, LabVIEW-controlled QE-PRO spectrometer, Keithley 2400, high-precision digital source meter Keithley 6485, 50μm inner diameter optical fiber, device test probes and fixtures, various connecting cables and data cards, efficiency test boxes, and data acquisition systems). Parameters such as the turn-on voltage, current, brightness, and emission spectrum of each photoelectric device were obtained. Then, key parameters such as external quantum efficiency and power efficiency were calculated, and the external quantum efficiency (EQE)-current density characteristic curve, current density-voltage characteristic curve, and electroluminescence spectrum of each photoelectric device were obtained.

[0203] The external quantum efficiency (EQE) is measured using an EQE optical testing instrument. It is the ratio of the number of electron-hole pairs injected into the quantum dot to the number of emitted photons, expressed as a percentage (%). The calculation formula is as follows:

[0204]

[0205] Where ηe is the optical output coupling efficiency, ηγ is the ratio of the number of recombinated carriers to the number of injected carriers, x is the ratio of the number of excitons that generate photons to the total number of excitons, KR is the radiative process rate, and KNR is the non-radiative process rate.

[0206] The device lifetime testing method includes the following steps: Under constant current (2mA) driving, electroluminescence lifetime analysis is performed on each optoelectronic device using lifetime testing equipment. The time (T95,h) required for each optoelectronic device to decay from its maximum brightness to 95% is recorded. Then, the device lifetime (T95@1000nit,h) at a brightness of 1000nit is obtained through the extended exponential decay brightness decay fitting formula. The calculation formula is as follows:

[0207]

[0208] Among them, T95 L For longer lifespan at low brightness, T95 H For the measured lifetime under high brightness, L H To accelerate the device to its maximum brightness, L L It is 1000 nits, and A is the acceleration factor with a value of 1.7.

[0209] The method for testing hole transport performance is as follows: A system for testing the efficiency of quantum dot light-emitting diodes (LEDs) is built using LabVIEW-controlled QE PRO and Keithley 2400. This system measures the current density-voltage curve of the single-hole device (HOD). The space charge confinement current (SCLC) region is obtained from the current density-voltage curve, and then the electron mobility is calculated using the following formula:

[0210] J=(9 / 8)ε r ε0μ e V2 / d 3 ;

[0211] Where J represents current density, in mA·cm. -2 ;ε r ε₀ represents the relative permittivity, and μ represents the vacuum permittivity. e Hole mobility is expressed in cm. 2 V -1 s -1 V represents the driving voltage, in volts (V); d represents the film thickness, in meters (m).

[0212] The only difference between the fabrication method of the single-hole device (HOD) and the fabrication method of the optoelectronic device in the corresponding embodiments or comparative examples is that the fabrication of the electronic functional layer is omitted. As an example, the method for detecting the hole mobility of the hole functional layer of the optoelectronic device in Example 1 is as follows: a single-hole device is fabricated (the electronic functional layer is omitted based on the optoelectronic device in Example 1), and then the hole mobility is detected and obtained according to the above method.

[0213] The method for detecting the storage stability of optoelectronic devices includes the following steps: obtaining the external quantum efficiency (EQE) according to the aforementioned method for detecting external quantum efficiency. max As the initial external quantum efficiency (day 1) for each optoelectronic device, each optoelectronic device was then placed in a dark environment at room temperature (relative humidity 8%) for 60 days. The external quantum efficiency was then measured on the third, fifteenth, thirtieth, fiftieth, and sixtieth days using the aforementioned external quantum efficiency detection method. The external quantum efficiency of each optoelectronic device on the sixtieth day was EQE@60 days. The decay rate was then calculated using the formula 100% - EQE@60 days / EQE. max ×100%), and obtain the external quantum efficiency (EQE)-placement time characteristic curve of each optoelectronic device.

[0214] The performance test results of each optoelectronic device are shown in Table 1 below:

[0215] Table 1

[0216]

[0217] From Table 1 and Figures 2 to 10 It can be seen that, compared with the optoelectronic devices in Comparative Examples 1, 4 and 5, the optoelectronic devices in Examples 1 to 13 have higher device efficiency, longer device lifespan and better storage performance stability; compared with the optoelectronic device in Comparative Example 2, the optoelectronic device in Example 14 has higher device efficiency, longer device lifespan and better storage performance stability; compared with the optoelectronic device in Comparative Example 3, the optoelectronic device in Example 15 has higher device efficiency, longer device lifespan and better storage performance stability.

[0218] This demonstrates that, for red, green, and blue quantum dot LEDs, adding an auxiliary layer between the hole functional layer and the light-emitting layer of the optoelectronic device, with the auxiliary layer prepared by combustion synthesis using a metal-organic compound containing a second electron-donating group as the raw material, can reduce the hole injection barrier and improve the hole injection level of the optoelectronic device, thereby improving the device efficiency and device lifetime. Furthermore, the overall performance improvement of red and green quantum dot LEDs is significantly higher than that of blue quantum dot LEDs.

[0219] Specifically, firstly, the formation of the auxiliary layer follows a top-down crystallization process. During this process, the metal salt containing the second electron-donating group is pushed downwards and concentrated on the surface of the lower hole functional layer. The second electron-donating group may bind to the surface of the hole functional layer through chemical bonds and / or adsorption, resulting in a gradient distribution of the second electron-donating group in the auxiliary layer. This second electron-donating group can raise the valence band position of the first metal oxide, thereby enabling the auxiliary layer to have a gradient energy level, reducing the hole injection barrier, and making the carrier distribution within the optoelectronic device more balanced. Secondly, during the formation of the auxiliary layer, at least some of the second electron-donating groups bind to the surface of the first metal oxide, which can increase the distance between crystals, effectively improving the phenomenon of crystallization agglomeration, thereby reducing the number of defect states in the first metal oxide, improving the film quality, and enhancing the performance stability of the auxiliary layer. Thirdly, introducing electron-donating groups into the auxiliary layer will cause the electron cloud to deviate from the functional group, which can enhance the conjugation effect of the intrinsic material, weaken energy level oscillations and reduce electron-phonon coupling, thereby reducing non-adiabatic coupling, effectively suppressing nonradiative recombination, and causing electrons to be donated continuously, which can increase the polarity of molecules, enhance the interaction between molecules, promote intermolecular charge transfer, and thus improve hole mobility.

[0220] Furthermore, adding an auxiliary layer between the hole functional layer and the light-emitting layer can prevent the hole functional layer from emitting light due to a large accumulation of electrons. For example, as... Figure 9 and Figure 10As shown, compared to the optoelectronic device in Example 14, the optoelectronic device in Comparative Example 2 has obvious electroluminescence clutter at the dashed box, and compared to the optoelectronic device in Example 15, the optoelectronic device in Comparative Example 3 has obvious electroluminescence clutter at the dashed box.

[0221] The poor overall performance of the optoelectronic devices in Comparative Examples 1 to 3 is due to the large hole injection barrier between the hole functional layer and the light-emitting layer, making hole injection difficult and resulting in a low hole injection level. This leads to a severe electron-hole injection imbalance in the optoelectronic devices. In Comparative Example 4, vanadium oxide nanoparticles prepared by conventional methods were used as the auxiliary layer material. In Comparative Example 5, molybdenum oxide nanoparticles prepared by conventional methods were used as the auxiliary layer material. These methods failed to create an energy level gradient between the anode and the hole functional layer, and the film quality was poor, resulting in poor overall performance of the optoelectronic devices.

[0222] The foregoing has provided a detailed description of an optoelectronic device, a method for fabricating the optoelectronic device, and an electronic device provided in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are merely for the purpose of helping to understand the technical solutions and core ideas of this application. Those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. An optoelectronic device, characterized in that, include: The anode and cathode are positioned opposite each other; A hole-functional layer is disposed between the anode and the cathode; as well as An auxiliary layer is disposed between the hole functional layer and the cathode; The auxiliary layer is made of a first metal oxide, the surface of which is adsorbed and / or bonded with a first electron-donating group.

2. The optoelectronic device according to claim 1, characterized in that, It has at least one of the following technical features: (1) The auxiliary layer includes a first surface and a second surface disposed opposite to each other, wherein the first surface is closer to the hole functional layer than the second surface; the content of the first electron-donating group in the auxiliary layer decreases along the direction from the first surface to the second surface; (2) The first electron-donating group includes one or more of -NH2, -N(R1)(R2), -NHR3, -OH, -NHCOR4, -OCOR5, alkyl groups having 1 to 30 carbon atoms, and phenyl groups; wherein R1, R2, R3, R4 and R5 are each independently selected from alkyl groups having 1 to 30 carbon atoms each time they appear; Optionally, R1, R2, R3, R4 and R5 are each independently selected from methyl, ethyl, propyl, butyl, pentyl or hexyl when they appear. (3) The thickness of the hole functional layer is 10nm to 100nm; (4) The thickness of the auxiliary layer is 10nm to 100nm; (5) The first metal oxide is selected from P-type metal oxide nanoparticles, and the average particle size of the first metal oxide is 2nm to 50nm.

3. The optoelectronic device according to claim 1, characterized in that, It has at least one of the following technical features: (1) The optoelectronic device further includes a light-emitting layer and an electronic functional layer disposed between the auxiliary layer and the cathode, wherein the light-emitting layer is closer to the auxiliary layer than the electronic functional layer, and the material of the light-emitting layer includes quantum dots; (2) The hole functional layer includes a hole injection layer and a hole transport layer stacked in sequence. The hole injection layer is closer to the anode than the hole transport layer. The materials of the hole injection layer and the hole transport layer independently include one or more of organic materials and inorganic materials.

4. The optoelectronic device according to claim 3, characterized in that, It has at least one of the following technical features: (1) The absolute value of the valence band of the auxiliary layer is greater than the absolute value of the HOMO level or valence band of the hole transport layer, and the absolute value of the valence band of the auxiliary layer is less than the absolute value of the valence band of the light-emitting layer. (2) The absolute value of the HOMO level or valence band of the hole transport layer is 5.30 eV to 5.70 eV; (3) The absolute value of the valence band of the auxiliary layer is 5.70 eV to 6.20 eV; (4) The absolute value of the valence band of the quantum dot is 6.2 eV to 6.8 eV.

5. The optoelectronic device according to claim 3 or 4, characterized in that, It has at least one of the following technical features: (1) The first metal oxide includes one or more of molybdenum oxide and vanadium oxide; (2) The organic materials include poly(3,4-vinyldioxythiophene): poly(styrene sulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacryloyl-1,4,5,8,9,12-hexaazabenzophenanthrene, polypyrrole, polyaniline, 3-hexyl-substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] ], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4”-tris(carbazole-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1- N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2 One or more of the following: 2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, N,N,N',N'-tetraarylbenzidine, 4,4',4”-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, N,N'-diphenyl-N,N'-di-[4-(N,N-diphenylamino)phenyl]benzidine, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and poly[2-methoxy-5-[(3,7-dimethyloctyloxy)-1,4-phenyl]-1,2-vinyldiyl]; (3) The inorganic material includes one or more of a first inorganic material and a second inorganic material. The first inorganic material includes one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide. The second inorganic material includes one or more doped first compounds. The main compound of the doped first compound includes graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, or tungsten sulfide. The doping element of the doped first compound is selected from one or more of boron, nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metals. (4) The quantum dots include one or more of single-component quantum dots, core-shell structured quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots. The core-shell structured quantum dots include one or more shells. The materials of the single-component quantum dots, the core of the core-shell structured quantum dots, and the shells of the core-shell structured quantum dots are each independently selected from at least one of group II-VI compounds, group III-VI compounds, group III-V compounds, group IV-VI compounds, or group I-III-VI compounds. The group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, and Hg. Se, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, and A. One or more of the following: lP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The group III-VI compounds are selected from one or more of In₂S₃, In₂Se₃, InGaS₃, and InGaSe₃; the group IV-VI compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; and the group I-III-VI compounds are selected from AgInS, AgInS₂, CuInS, CuInS₂, AgGaS₂, CuGaS₂, and CuGaO₂.AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2 are selected as one or more, wherein the inorganic perovskite quantum dots have the general structural formula QJT3, the organic-inorganic hybrid perovskite quantum dots have the general structural formula GJT3, and the organic perovskite quantum dots have the general structural formula LJT3, where J is a divalent metal cation, and J is independently selected from Pb each time it appears. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ and Eu 2+ One or more of them, where T is independently selected from Cl each time it appears. - ,Br - and I - One or more of them, where Q is Cs + G is selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ n≥2, L is selected from formamidinyl; Optionally, the quantum dot includes one or more of single-component quantum dots and core-shell structured quantum dots, wherein the material of the single-component quantum dot, the material of the core of the core-shell structured quantum dot, and the material of the shell of the core-shell structured quantum dot are each independently selected from one or more of CdS, CdSe, ZnS, ZnSe, CdSeS, ZnSeS, CdZnS, CdZnSe, and CdZnSeS; (5) The material of the electronic functional layer includes one or more of a third inorganic material and a fourth inorganic material; the third inorganic material includes one or more of an undoped second metal oxide, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, a group IB-IIIA-VIA semiconductor material, a ZrSiO4, a BaTiO3, a BaZrO3, and a Si3N4; the undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2; the group IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe, and CdS; the group IIIA-VA semiconductor material is selected from one or more of InP and GaP; and the group IB-IIIA-VIA semiconductor material is selected from one or more of CuInS and CuGaS; the fourth inorganic material includes one or more doped second compounds, the general formula of which is A (1-x) M x E, where x is greater than zero and not greater than 0.5 each time it appears, A and M are different, and A and M are each independently selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ga, Li, Ga, In, Fe, Mn and Y each time it appears, and E is each independently selected from S or O each time it appears. Optionally, the doped second compound is selected from Zn. (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O, Ti (1-x) Li x O, Ti (1-x) Mn x O, Ti (1-x) Mg x O, Ti (1-x) Fe x O and Zn (1-x) In x One or more of S.

6. A method for fabricating an optoelectronic device, characterized in that, Includes the following steps: A first electrode is provided, and a hole functional layer is formed on one side of the first electrode; and A second electrode is formed on the side of the hole-functional layer away from the first electrode; Wherein, when the first electrode is an anode and the second electrode is a cathode, after the step of forming the hole functional layer and before the step of forming the second electrode, the method for fabricating the optoelectronic device further includes the step of forming an auxiliary layer on the side of the hole functional layer away from the first electrode, and forming the second electrode on the side of the auxiliary layer away from the hole functional layer; or, when the first electrode is a cathode and the second electrode is an anode, before the step of forming the hole functional layer, the method for fabricating the optoelectronic device further includes the step of forming an auxiliary layer on one side of the first electrode, and forming the hole functional layer on the side of the auxiliary layer away from the first electrode; The method for preparing the auxiliary layer includes the steps of: depositing a composition, and then heat-treating the deposited composition to obtain the auxiliary layer; the auxiliary layer includes an organometallic compound, a fuel, and a solvent, wherein the organometallic compound includes a second electron-donating group, the organometallic compound includes a first metal element, and the fuel is an oxygen-containing reducing agent.

7. The method for fabricating the optoelectronic device according to claim 6, characterized in that, It has at least one of the following technical features: (1) The first metallic element includes one or more of molybdenum and vanadium, and the organometallic compound includes one or more of organomolybdenum and organovanadium; (2) The fuel includes one or more of hydrogen peroxide, urea, glycine, citric acid and tris(hydroxymethyl)aminomethane; (3) In the composition, the mass ratio of the organometallic compound to the fuel is 1:(0.04 to 0.08); (4) The composition further includes additives, including ketone compounds; (5) The solvent includes one or more of methanol, ethanol, n-propanol, isopropanol, n-butanol, tert-butanol, pentanol, glycerol, methoxyethanol, N,N-dimethylformamide, and dimethyl sulfoxide; (6) In the composition, the concentration of the organometallic compound is 10 mg / mL to 40 mg / mL; (7) The second electron-donating group includes one or more of -NH2, -N(R1)(R2), -NHR3, -OH, -NHCOR4, -OCOR5, alkyl groups having 1 to 30 carbon atoms, and phenyl groups; wherein R1, R2, R3, R4 and R5 are each independently selected from alkyl groups having 1 to 30 carbon atoms each time they appear; (8) The temperature of the heat treatment is 120℃~250℃ and the time of the heat treatment is 10min~40min.

8. The method for fabricating the optoelectronic device according to claim 7, characterized in that, It has at least one of the following technical features: (1) R1, R2, R3, R4, R5 and R6 are each independently selected from methyl, ethyl, propyl, butyl, pentyl or hexyl when they appear. (2) The molybdenum organic compound is selected from one or more of tris(N-butylene-3,5-dimethylaniline)molybdenum, bis(tert-butylimino)bis(dimethylamino)molybdenum (VI) and tris(N-tert-butylene-3,5-dimethylaniline)molybdenum (III); (3) The vanadium organic compound is selected from one or more of tetra(dimethylamino)vanadium(IV), tetra(diethylamino)vanadium(IV), octaethylporphyrin vanadium and tetra(ethylmethylamino)vanadium(IV); (4) The additives include one or more of acetylacetone, 1,3-diacetoxyacetone, 2,3-butanedione, 2,3-pentanedione, 2,3-hexanedione, 2,3-heptanedione and 2,3-octanedione; (5) In the composition, the mass ratio of the organometallic compound to the additive is 1:(0.04 to 0.06).

9. The method for fabricating the optoelectronic device according to any one of claims 6 to 8, characterized in that, When the first electrode is an anode and the second electrode is a cathode, after the step of forming the auxiliary layer and before the step of forming the second electrode, the method for fabricating the optoelectronic device further includes the step of: sequentially forming a light-emitting layer and an electronic functional layer on the side of the auxiliary layer away from the hole functional layer, and forming the second electrode on the side of the electronic functional layer away from the light-emitting layer; or, when the first electrode is a cathode and the second electrode is an anode, before the step of forming the auxiliary layer, the method for fabricating the optoelectronic device further includes the step of: sequentially forming an electronic functional layer and a light-emitting layer on one side of the first electrode, and forming the auxiliary layer on the side of the light-emitting layer away from the electronic functional layer; Optionally, when the first electrode is an anode and the second electrode is a cathode, forming the hole functional layer includes the steps of: sequentially forming a hole injection layer and a hole transport layer on one side of the first electrode; or, when the first electrode is a cathode and the second electrode is an anode, forming the hole functional layer includes the steps of: sequentially forming a hole transport layer and a hole injection layer on the side of the auxiliary layer away from the first electrode; the absolute value of the valence band of the auxiliary layer is greater than the absolute value of the HOMO level or valence band of the hole transport layer, and the absolute value of the valence band of the auxiliary layer is less than the absolute value of the valence band of the light-emitting layer.

10. An electronic device, characterized in that, The electronic device includes the optoelectronic device as described in any one of claims 1 to 5, or the optoelectronic device prepared by the method described in any one of claims 6 to 9.

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