Compositions, films, and methods of making thereof, and optoelectronic devices

Abstract

This application discloses a composition, a thin film, a preparation method thereof, and an optoelectronic device. The composition includes an organometallic compound, a combustion agent, an additive, and a solvent. The organometallic compound includes a first electron-donating group and a first metal element. The oxide of the first metal element in at least one valence state is a p-type metal oxide. The composition can prepare the oxide of the first metal element by combustion synthesis. The obtained metal oxide has good performance stability, and the thin film formed based on the obtained metal oxide has good hole transport performance.

Description

Technical Field

[0001] This application relates to the field of organic materials technology, specifically to a composition, a thin film, a method for preparing the same, and an optoelectronic device. Background Technology

[0002] Metal oxides are compounds formed by the combination of metal elements and oxygen elements. When metal oxides are nanoscaled, they exhibit small size effect, surface and interface effect, quantum dot size effect and macroscopic quantum tunneling effect due to their small size, large specific surface area and many surface active centers. As a result, they are widely used in batteries, optoelectronic devices, supercapacitors, energy storage devices and magnetic devices.

[0003] P-type metal oxides are a class of metal oxides that use holes as charge carriers to conduct charge. When P-type metal oxides are prepared into thin films using solution methods, the hole transport performance of the thin films is poor. Summary of the Invention

[0004] In view of the shortcomings of the prior art, this application provides a composition, a thin film, a method for preparing the same, and an optoelectronic device.

[0005] In a first aspect, this application provides a composition comprising an organometallic compound, a combustion agent, an additive, and a solvent, wherein the organometallic compound comprises a first electron-donating group, the organometallic compound comprises a first metal element, the oxide of the first metal element in at least one valence state is a p-type metal oxide, the combustion agent is an oxygen-containing reducing agent, and the additive comprises a ketone compound.

[0006] In a second aspect, this application provides a method for preparing a thin film, comprising the steps of: depositing a composition as described in the first aspect, and then heat-treating the deposited composition to obtain the thin film.

[0007] Thirdly, this application provides a thin film comprising a p-type metal oxide, wherein at least a portion of the p-type metal oxide has a second electron-donating group adsorbed and / or bonded to its surface.

[0008] Fourthly, this application provides an optoelectronic device, comprising:

[0009] The anode and cathode are arranged opposite each other; and

[0010] Multiple functional layers are disposed between the anode and the cathode;

[0011] Wherein, at least one of the plurality of functional layers is prepared by a film-forming process from the composition as described in the first aspect, or at least one of the plurality of functional layers is prepared by a thin film preparation method as described in the second aspect, or at least one of the plurality of functional layers is a thin film as described in the third aspect.

[0012] This application provides a composition, a thin film, a method for preparing the same, and an optoelectronic device, which have the following technical advantages:

[0013] The composition of this application includes an organometallic compound, a combustion agent, an additive, and a solvent, wherein the organometallic compound includes a first electron-donating group, and the composition is capable of preparing an oxide of a first metal element, such as a p-type metal oxide, by a combustion synthesis method. The obtained metal oxide has good performance stability, and the thin film formed based on the obtained metal oxide has good hole transport performance. Attached Figure Description

[0014] The technical solution and other beneficial effects of this application will become apparent from the following detailed description of specific embodiments in conjunction with the accompanying drawings.

[0015] Figure 1 This is a schematic diagram of the structure of an optoelectronic device provided in an embodiment of this application.

[0016] Figure 2 The current density-external quantum efficiency characteristic curves of the optoelectronic devices in Examples 1 to 5 and Comparative Examples 3 to 5 provided in this application.

[0017] Figure 3 The current density-external quantum efficiency characteristic curves of the optoelectronic devices in Examples 6 to 11 provided in this application.

[0018] Figure 4 The current density-external quantum efficiency characteristic curves of the optoelectronic devices in Examples 12, 13, 6 and 7 provided for this application.

[0019] Figure 5 The current density-external quantum efficiency characteristic curves of the optoelectronic devices in Examples 14 and 15 provided in this application.

[0020] Figure 6 Voltage-current density characteristic curves of the optoelectronic devices in Examples 1 to 5 and Comparative Examples 3 to 5 provided in this application.

[0021] Figure 7 Voltage-current density characteristic curves of the optoelectronic devices in Examples 6 to 11 provided in this application.

[0022] Figure 8 Voltage-current density characteristic curves of the optoelectronic devices in Examples 12, 13, Comparative Example 6 and Comparative Example 7 provided in this application.

[0023] Figure 9 The current density-external quantum efficiency characteristic curves of the optoelectronic devices in Examples 14 and 15 provided in this application.

[0024] Figure 10 Microscopic morphology diagrams of the hole functional layer of the optoelectronic device in Embodiment 2 and Comparative Examples 1 to 3 provided in this application. Detailed Implementation

[0025] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those familiar to those skilled in the art. Furthermore, any methods and materials similar to or equivalent to those described herein may be applied to this invention. The preferred embodiments and materials described herein are for illustrative purposes only and do not limit the scope of this application.

[0027] It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of embodiments. The various embodiments of this application may exist in a range format. It should be understood that the description in a range format is merely for convenience and simplicity and should not be construed as a rigid limitation on the scope of the invention. Therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is indicated herein, it means including any referenced number (fraction or integer) within the indicated range.

[0028] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the optoelectronic device in its actual use or operating state, specifically the orientation shown in the accompanying drawings; while "inner" and "outer" refer to the outline of the optoelectronic device. The terms "first," "second," "third," etc., are used merely as indications and do not impose numerical requirements or establish a sequence.

[0029] In this application, descriptions such as "layer A is formed on one side of layer B," "layer A is formed on the side of layer B away from layer C," or similar expressions can mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, i.e., layer A and layer B are in direct contact; or they can mean that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, i.e., other spacer structures can be formed between layer A and layer B. Similarly, "layer A is disposed on one side of layer B" or "layer A is disposed on the side of layer B away from layer C" can mean that layer A and layer B are in direct contact, or that other spacer structures are provided between layer A and layer B; "layer A is disposed between layer B and layer C" can mean that layer A and layer B are in direct contact and layer A and layer C are in direct contact, or layer A and layer B are in direct contact and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and layer A and layer C are in direct contact.

[0030] The term "including" means "including but not limited to". The term "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. A and B can be singular or plural. The term "at least one" means one or more, and "more than one" means two or more. The terms "at least one", "at least one of the following", or similar expressions refer to any combination of these items, including any combination of a single or plural type. For example, "at least one of a, b, or c" or "at least one of a, b, and c" can be expressed as: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can each be a single or multiple type.

[0031] The term "average particle size" refers to the area-average particle size of a particle swarm. Area-average particle size is calculated by dividing the total volume of the particle swarm by its total area, which is the reciprocal of the surface area per unit volume. If an imaginary swarm of particles with uniform size is used to replace the original swarm, and the total volume and area of ​​this imaginary swarm are identical to the original swarm, then the diameter of this imaginary swarm is the area-average particle size of the original swarm. Area-average particle size can be obtained through statistical analysis, using transmission electron microscopy to statistically analyze the particle size of each particle in the swarm.

[0032] The term "aliphatic chain hydrocarbon group" refers to an aliphatic straight-chain hydrocarbon group or an aliphatic branched hydrocarbon group. "C1-C30 aliphatic chain hydrocarbon group" can be, for example, aliphatic chain hydrocarbon groups of C1-C20, C1-C18, C1-C15, C1-C12, C1-C10, C1-C8, C1-C6, or C1-C3. Aliphatic chain hydrocarbon groups can be, for example, C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, C9 alkyl, or C10 alkyl. Suitable examples of "aliphatic chain hydrocarbon groups" include, but are not limited to, methyl, ethyl, vinyl, ethynyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl, 3,7-dimethyloctyl, n-nonyl, n-decyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyl Decyl, 2-octyldecyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecanyl, n-hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, n-heptadecyl, n-octadecyl, n-octadecyl, n-heptadecyl, n-octadecyl, n-heptadecyl, n-eicosyl, 2-ethyleicosyl, 2-butyleicosyl, 2-hexyleicosyl, 2-octyleicosyl, n-monodecyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, or n-trianecanyl.

[0033] The term "aliphatic subchain hydrocarbon group" refers to a group obtained by removing one hydrogen atom from the aforementioned aliphatic chain hydrocarbon group.

[0034] The term "aliphatic chain hydrocarbon group" refers to a group with the general formula *-O-aliphatic chain hydrocarbon group, where * indicates a bonding site and O represents an oxygen atom. Suitable examples include, but are not limited to, methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), tert-butoxy (-OC(CH3)3 or -OtBu), and n-hexyloxy (-O-C6H). 13 ), n-decanoyloxy (-OC) 10 H 21 ), or n-dodecyloxy (-OC)12 H 25 ).

[0035] The term "aliphatic subchain hydroxyl group" refers to the group obtained by removing one hydrogen atom from the aforementioned aliphatic chain hydroxyl group.

[0036] The term "aliphatic cyclic hydrocarbon group" refers to an aliphatic hydrocarbon group having a cyclic structure. "Aliphatic cyclic hydrocarbon group with 3 to 30 ring atoms" can be, for example, an aliphatic cyclic hydrocarbon group with 3 to 20 ring atoms, an aliphatic cyclic hydrocarbon group with 3 to 18 ring atoms, an aliphatic cyclic hydrocarbon group with 3 to 16 ring atoms, an aliphatic cyclic hydrocarbon group with 3 to 14 ring atoms, an aliphatic cyclic hydrocarbon group with 3 to 12 ring atoms, an aliphatic cyclic hydrocarbon group with 3 to 10 ring atoms, an aliphatic cyclic hydrocarbon group with 3 to 8 ring atoms, an aliphatic cyclic hydrocarbon group with 3 to 6 ring atoms, or an aliphatic cyclic hydrocarbon group with 3 to 5 ring atoms. Suitable examples include, but are not limited to, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, or adamantyl.

[0037] The term "aliphatic subcyclic hydrocarbon group" refers to a group obtained by removing one hydrogen atom from the aforementioned aliphatic cyclic hydrocarbon group.

[0038] The term "aliphatic heterocyclic hydrocarbon group" refers to an aliphatic cyclic hydrocarbon group in which at least one carbon atom is replaced by a non-carbon atom. The non-carbon atom can be one or more of N, O, S, Si, and P atoms. The number of heteroatoms in the aliphatic heterocyclic hydrocarbon group is independently between 1 and 20. "Aliphatic heterocyclic hydrocarbon group with 3 to 30 ring atoms" can be, for example, an aliphatic heterocyclic hydrocarbon group with 3 to 20 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 18 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 16 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 14 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 12 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 10 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 8 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 6 ring atoms, or an aliphatic heterocyclic hydrocarbon group with 3 to 5 ring atoms. Suitable examples of aliphatic heterocyclic hydrocarbon groups include, but are not limited to, cyclothioethyl, acridine, or ethylene oxide.

[0039] The term "aliphatic heterocyclic hydrocarbon group" is a group obtained by removing one hydrogen atom from the aforementioned aliphatic heterocyclic hydrocarbon group.

[0040] The term "aryl" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing one hydrogen atom. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl, and in the case of a polycyclic ring, at least one of the rings is an aromatic ring system. "Aryl with 6 to 30 ring atoms" can, for example, be an aryl with 6 to 24 ring atoms, an aryl with 6 to 20 ring atoms, an aryl with 6 to 18 ring atoms, an aryl with 6 to 16 ring atoms, an aryl with 6 to 14 ring atoms, or an aryl with 6 to 10 ring atoms. Suitable examples include, but are not limited to, phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthryl, fluoranyl, triphenylene, pyrene, perylene, tetraphenyl, fluorenyl, dinaphthylphenyl, acenaphthyl, and their derivatives. Understandably, multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, and diaryl ether systems should also be included in the definition of aryl.

[0041] The term "aryl" refers to a group obtained by removing a hydrogen atom from the aforementioned aryl group.

[0042] The term "heteroaryl" refers to an aryl group in which at least one carbon atom is replaced by a non-carbon atom. The non-carbon atom can be one or more of N, O, S, Si, and P atoms, and the number of heteroatoms can be, for example, 1 to 20. "Heteroaryl with 5 to 30 ring atoms" can be, for example, a heteroaryl with 5 to 24 ring atoms, a heteroaryl with 5 to 20 ring atoms, a heteroaryl with 5 to 18 ring atoms, a heteroaryl with 5 to 16 ring atoms, a heteroaryl with 5 to 14 ring atoms, or a heteroaryl with 5 to 10 ring atoms. Suitable examples include, but are not limited to, thiophene, furanyl, pyrrolyl, diazolyl, triazolyl, imidazole, pyridyl, bipyridyl, pyrimidinyl, triazinyl, acridineyl, pyridazinyl, quinolinyl, isoquinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridopyrimidinyl, pyridopyrazinyl, benzothiophene, benzofuranyl, indolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thienopyrrolyl, thienopyrrolyl, furanolyl, furanolyl, thienofuranyl, benzoisoxazolyl, benzoisothiazolyl, benzoimidazolyl, o-diazonyl, phenanthridine, primidyl, quinazolinone, dibenzothiophene, dibenzofuranyl, or carbazolyl.

[0043] The term "hybrid aryl" refers to a group obtained by removing a hydrogen atom from the aforementioned heteroaryl group.

[0044] In this application, "halogen group" or "halogen" represents -Cl, -Br, -F or -I; hydroxyl group represents -OH; carboxyl group represents -COOH; nitro group represents -NO2; sulfonic acid group represents -SO3H; mercapto group represents -SH; cyano group represents *-C≡N.

[0045] In this application, "electron-donating group" refers to a functional group that can donate electrons to other parts of a molecule.

[0046] In this application, the thickness of the thin film refers to the average thickness of the thin film, and the thickness of a certain functional layer refers to the average thickness of the functional layer. The thickness is obtained by measuring a step tester.

[0047] The terms “combinations thereof,” “any combination thereof,” and “any combination thereof” as used in this application include all suitable combinations of any two or more of the listed items.

[0048] This application provides a composition comprising an organometallic compound, a combustion agent, an additive, and a solvent. The organometallic compound includes a first electron-donating group, and the organometallic compound includes a first metal element. The oxide of the first metal element in at least one valence state is a p-type metal oxide. The combustion agent is an oxygen-containing reducing agent, and the additive includes a ketone compound.

[0049] The compositions of this application embodiment can prepare oxides of a first metallic element, such as the p-type metal oxide, by combustion synthesis. Since the combustion synthesis reaction is exothermic, no external energy input is required once ignited. The self-generated synthesis heat provides local energy supply, thus eliminating the need for prolonged high-temperature treatment and effectively reducing preparation costs. By using organometallic compounds containing a first electron-donating group as raw materials, the surface of the obtained metal oxide can be bound with the first electron-donating group. On the one hand, this reduces the number of defect states in the obtained metal oxide, improving the performance stability of the obtained metal oxide. On the other hand, the first electron-donating group has a strong electron-donating ability, which can raise the valence band energy level of the obtained metal oxide.

[0050] In some embodiments of this application, the combustion agent includes one or more of peroxides, compounds represented by formula R7-COOH, and compounds represented by formula R8-NH2, and the additives include those of formula R8-NH2. The compound shown.

[0051] R7, R8, R9 and R 10Each time it appears, it is independently selected from unsubstituted or substituted with at least one R C1-C30 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1-C30 aliphatic hydroxyl group, unsubstituted or substituted with at least one R aliphatic cyclic hydrocarbon group having 3 to 30 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms, unsubstituted or substituted with at least one R aryl group having 6 to 30 ring atoms, and unsubstituted or substituted with at least one R heteroaryl group having 5 to 30 ring atoms. Or a combination of the aforementioned groups.

[0052] R 11 and R 13 Each time it appears, it is independently selected from single bonds, unsubstituted or substituted with at least one R C1-C30 aliphatic subchain hydrocarbon group, unsubstituted or substituted with at least one R C1-C30 aliphatic subchain hydrocarbon oxygen group, unsubstituted or substituted with at least one R aliphatic subcyclic hydrocarbon group having 3 to 30 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms, unsubstituted or substituted with at least one R aryl group having 6 to 30 ring atoms, unsubstituted or substituted with at least one R heterocyclic hydrocarbon group having 5 to 30 ring atoms, *-O-*, or combinations of the foregoing groups.

[0053] R 12 and R 14 Each time it appears, it is independently selected from unsubstituted or substituted with at least one R C1-C30 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1-C30 aliphatic chain hydroxyl group, unsubstituted or substituted with at least one R aliphatic cyclic hydrocarbon group having 3 to 30 ring atoms, unsubstituted or substituted with at least one R aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms, unsubstituted or substituted with at least one R aryl group having 6 to 30 ring atoms, unsubstituted or substituted with at least one R heteroaryl group having 5 to 30 ring atoms, or a combination of the aforementioned groups.

[0054] Each time R appears, it is independently selected from -D, aliphatic chain hydrocarbon group of C1 to C20, aliphatic chain hydrocarbon oxygen group of C1 to C20, hydroxyl group, carboxyl group, amino group, or a combination of the aforementioned groups.

[0055] In some embodiments of this application, the first metallic element includes one or more of chromium, copper, and manganese, and correspondingly, the organometallic compound includes one or more of organochromium, organocopper, and organomanganese.

[0056] In some embodiments of this application, the first electron-donating group includes -NH2, -N(R1)(R2), -NHR3, -OH, -O-R4, -NHCOR5, -OCOR6, and -O. - One or more of alkyl and phenyl groups; wherein R1, R2, R3, R4, R5 and R6 are each independently selected from alkyl groups having 1 to 30 carbon atoms, and for example, R1, R2, R3, R4, R5 and R6 are each independently selected from alkyl groups having 1 to 20 carbon atoms, alkyl groups having 1 to 15 carbon atoms, alkyl groups having 1 to 10 carbon atoms, alkyl groups having 1 to 6 carbon atoms, or alkyl groups having 1 to 3 carbon atoms. R1, R2, R3, R4, R5 and R6 are, for example, independently selected from methyl groups, exhibiting a strong electron-donating effect.

[0057] In some embodiments of this application, the organochromium compound includes one or more of the following: bis(phenyl)chromium (CAS No. 1271-54-1), bis(ethylphenyl)chromium (CAS No. 12212-68-9), bis(ethylcyclopentadienyl)chromium (CAS No. 55940-03-9), bis(tetramethylcyclopentadienyl)chromium (CAS No. 82066-37-3), bis(pentamethylcyclopentadienyl)chromium (CAS No. 74507-61-2), and bis(isopropylcyclopentadienyl)chromium (CAS No. 329735-69-5).

[0058] In some embodiments of this application, the copper organochemical compound includes one or more of (2,4,6-trimethylphenyl)copper (I) (CAS No. 75732-01-3), bis(dimethylamino-2-propoxy)copper (II) (CAS No. 185827-91-2), copper dimethyldithiocarbamate (II) (CAS No. 137-29-1), and copper dibutyldithiocarbamate (II) (CAS No. 13927-71-4).

[0059] In some embodiments of this application, the manganese organic compounds include one or more of the following: di(ethylcyclopentadienyl)manganese (CAS No. 101923-26-6), bis(N,N”-diisopropylpentamido)manganese(II) (CAS No. 1188406-04-3), tetra-p-tolylporphyrin manganese (CAS No. 43145-44-4), bis(pentamethylcyclopentadienyl)manganese (CAS No. 67506-86-9), and di(isopropylcyclopentadienyl)manganese (CAS No. 67506-86-9).

[0060] In some embodiments of this application, the composition further includes a boron organocompound, which enables the metal oxide obtained by combustion synthesis to be doped with boron, achieving P-type doping. This doping method generates free holes in the obtained metal oxide, which can further improve the hole mobility of the obtained metal oxide.

[0061] Furthermore, in some embodiments of this application, the boron organic compound includes a third electron-donating group, the selection range of which refers to the description of the first electron-donating group, which is beneficial to further reduce the number of defect states in the obtained metal oxide and improve the performance stability of the obtained metal oxide.

[0062] In some embodiments of this application, the mass ratio of organometallic compound to organoboron compound is 1:(0.03 to 0.05), for example, it can be 1:0.03, 1:0.04, 1:0.05 or any two of the aforementioned values. Within this range, both P-type doping can be achieved and the obtained metal oxide can be ensured to have good conductivity.

[0063] In some embodiments of this application, the boron organic compound includes one or more of tetrakis(dimethylamino)diboron (CAS No. 1630-79-1), triethylboron (CAS No. 97-94-9), and triethylamineborane (CAS No. 1722-26-5).

[0064] In the compositions of this application embodiment, the combustor can promote the combustion synthesis reaction, reduce the temperature required for the reaction, and improve the crystallinity of the first metal oxide. Without the combustor, it would be impossible to crystallize into a film at a lower temperature (e.g., below 200°C).

[0065] In some embodiments of this application, R7 and R8, each time appearing, are independently selected from unsubstituted or substituted with at least one R C1-C10 aliphatic chain hydrocarbon group and unsubstituted or substituted with at least one R C1-C10 aliphatic alkyl group. As an example, the combustion agent includes one or more of hydrogen peroxide, urea, glycine, citric acid, and tris(hydroxymethyl)aminomethane.

[0066] In some embodiments of this application, the mass ratio of the organometallic compound to the combustion agent in the composition is 1:(0.05 to 0.1), for example, it can be 1:0.05, 1:0.06, 1:0.07, 1:0.08, 1:0.09, 1:0.1 or any two of the aforementioned values. Within the aforementioned ratio range, the combustion agent and the organometallic compound can undergo a sufficient combustion synthesis reaction with a high yield, and the obtained metal oxide has a high hole mobility and performance stability.

[0067] Taking copper-based organometallic compounds as an example and urea as the combustion agent, the reaction equation for the combustion synthesis reaction between copper-based organometallic compounds and urea is as follows:

[0068] Cu 2+ +CON2H 4(s) →CuO (s) +N 2(g) +H2O (g) +CO 2(g) ΔH 298 K = -2320.4kJ.

[0069] In the compositions of this application, the additives can effectively prevent the aggregation of organometallic compounds, thereby improving the phenomenon of crystallization and aggregation of generated metal oxides. As a result, when the compositions are prepared to form thin films including P-type metal oxides, the film quality can be improved.

[0070] In some embodiments of this application, R9 and R 10 Each occurrence is independently selected from unsubstituted or substituted with at least one R C1-C10 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1-C10 aliphatic alkyl group, Or a combination of the aforementioned groups; R 11 and R 13 Each time it appears, it is independently selected from single bonds, unsubstituted or C1-C10 aliphatic subchain hydrocarbon groups substituted with at least one R, unsubstituted or C1-C10 aliphatic subchain hydroxyl groups substituted with at least one R, or combinations of the aforementioned groups; R 12 and R 142 Each time it appears, it is independently selected from unsubstituted or substituted with at least one R C1-C10 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1-C30 aliphatic chain hydroxyl group, or a combination of the aforementioned groups.

[0071] As an example, the additives include one or more of acetylacetone, 1,3-diacetoxyacetone, 2,3-butanedione, 2,3-pentanedione, 2,3-hexanedione, 2,3-heptanedione, and 2,3-octanedione.

[0072] In some embodiments of this application, the mass ratio of organometallic compound to additive in the composition is 1:(0.02 to 0.08), for example, it can be 1:0.02, 1:0.03, 1:0.04, 1:0.05, 1:0.06, 1:0.07, 1:0.08 or any two of the aforementioned values. Within the aforementioned ratio range, the aggregation of organometallic compound can be effectively prevented and the waste of additive can be avoided.

[0073] In some embodiments of this application, the solvent includes one or more of methanol, ethanol, n-propanol, isopropanol, n-butanol, tert-butanol, pentanol, glycerol, methoxyethanol, N,N-dimethylformamide, and dimethyl sulfoxide. It is understood that the amount of solvent used is not limited, as long as it is sufficient to fully dissolve the organometallic compound, additives, and combustion agent therein. In at least one embodiment, the concentration of the organometallic compound in the composition is from 10 mg / mL to 40 mg / mL, for example, it can be 10 mg / mL, 20 mg / mL, 30 mg / mL, 40 mg / mL, or a range between any two of the aforementioned values.

[0074] This application also provides a method for preparing a thin film, comprising the steps of: depositing a composition as described above, and then heat-treating the deposited composition to obtain a thin film.

[0075] The aforementioned thin film preparation method employs a combustion synthesis method to form the film, which includes an oxide of a first metal element (e.g., a p-type metal oxide). The composition can be first prepared into a wet film, and then converted into a thin film containing p-type metal oxides at a relatively low temperature through a combustion synthesis reaction. This eliminates the need for prolonged high-temperature treatment, effectively reducing preparation costs. Using organometallic compounds containing a first electron-donating group as raw materials allows the surface of the metal oxide in the film to be bound with this first electron-donating group. On the one hand, the first electron-donating group possesses a strong electron-donating ability, causing the electron cloud to deviate from the functional group, thereby enhancing the film's properties. The conjugation effect of the material weakens energy level oscillations and reduces non-adiabatic coupling, thereby improving the hole mobility of the film. On the other hand, the formation of the film follows a top-down crystallization process, that is, starting from the top surface of the wet film, the residual solvent gradually evaporates and crystallizes downwards. As the residual solvent evaporates, the wet film gradually crystallizes to form an oxide of the first metal element. The surface of the oxide of the first metal element will be combined with the first electron-donating group, which can increase the distance between crystals, effectively improve the phenomenon of crystallization agglomeration, and reduce the number of defect states of the oxide of the first metal element, thereby improving the film quality and the performance stability of the film.

[0076] Specifically, the deposition method of the composition includes, but is not limited to, one or more of the following: spin coating deposition, inkjet printing deposition, blade coating deposition, dip-coating deposition, immersion deposition, spraying deposition, roller coating deposition, casting deposition, slot coating deposition, and strip coating deposition. The heat treatment can be performed in an atmosphere of air or oxygen.

[0077] In some embodiments of this application, the heat treatment temperature is 120°C to 250°C, for example, it can be 120°C, 150°C, 180°C, 200°C, 230°C, 250°C or any two of the aforementioned values. Heat treatment within the aforementioned temperature range can induce the metal-organic compound to undergo a combustion synthesis reaction with the combustion agent to form an oxide of the first metal element, while avoiding excessively high temperatures that could cause the oxide of the first metal element to agglomerate and / or generate other impurities.

[0078] In some embodiments of this application, the heat treatment time is 20 min to 40 min, for example, it can be 20 min, 25 min, 30 min, 35 min, 40 min, or any range between the aforementioned two values. Since organometallic compounds can undergo a combustion synthesis reaction with the combustion agent, and combustion synthesis is exothermic, once ignited, no external energy input is required. The self-generated heat of synthesis provides local energy supply, eliminating the need for prolonged high external processing temperatures. Therefore, the heat treatment time is relatively short, which can reduce costs and avoid damage to the substrate from high temperatures.

[0079] This application also provides a thin film comprising a p-type metal oxide, wherein at least a portion of the p-type metal oxide has a second electron-donating group adsorbed and / or bonded to its surface, and the thin film has good surface smoothness and hole transport performance.

[0080] To further improve the hole mobility of the thin film, in some embodiments of this application, the P-type metal oxide includes one or more of chromium oxide, manganese oxide, and copper oxide.

[0081] In some embodiments of this application, the second electron-donating group includes -NH2, -N(R7)(R8), -NHR9, -OH, and -OR. 10 -NHCOR 11 -OCOR 12 -O - One or more of alkyl and phenyl groups; wherein R7, R8, R9, and R 10 R 11 and R 12 Each is independently selected from alkyl groups having 1 to 30 carbon atoms, R7, R8, R9, R 10 R 11 and R 12 For example, they are independently selected from alkyl groups having 1 to 20 carbon atoms, alkyl groups having 1 to 15 carbon atoms, alkyl groups having 1 to 10 carbon atoms, alkyl groups having 1 to 6 carbon atoms, or alkyl groups having 1 to 3 carbon atoms. R7, R8, R9, R 10 R 11 and R 12The examples are each independently selected from methyl groups and have a strong electron-donating effect.

[0082] In some embodiments of this application, the thin film is prepared using any of the thin film preparation methods described above, and the first electron-donating group and the second electron-donating group are the same.

[0083] In some embodiments of this application, the thin film includes a first surface and a second surface disposed opposite to each other, and the content of the second electron-donating group in the thin film tends to increase along the direction from the first surface to the second surface. When the thin film is prepared using any of the thin film preparation methods described above, the first electron-donating group and the second electron-donating group are the same. Based on the fact that the formation of the thin film follows a top-down crystallization process, during the formation of the thin film, the organometallic compound containing the first electron-donating group is pushed downward, thereby causing the second electron-donating group in the thin film to exhibit a gradient distribution.

[0084] In the thin films of this application, the P-type metal oxide can be one or more of the following morphologies: nanoparticles, nanosheets, and nanorods. In at least one embodiment of this application, the P-type metal oxide is in the form of nanoparticles, and the average particle size of the P-type metal oxide is 2 nm to 30 nm, for example, it can be 2 nm, 5 nm, 8 nm, 10 nm, 15 nm, 20 nm, 30 nm, or any two of the aforementioned values.

[0085] In some embodiments of this application, the thickness of the film is 10nm to 80nm, for example, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm or any two of the aforementioned values.

[0086] To further improve the hole mobility of the thin film, in some embodiments of this application, the P-type metal oxide is doped with boron, and the boron content in the thin film is 1wt% to 3wt%, for example, 1wt%, 2wt%, 3wt% or any two of the aforementioned values. Within this range, both P-type doping and good conductivity of the thin film can be achieved.

[0087] This application also provides an optoelectronic device, which includes, but is not limited to, light-emitting devices, photovoltaic cells, or photodetectors, such as... Figure 1As shown, the optoelectronic device 10 includes: an anode 101 and a cathode 102 disposed opposite to each other, and a plurality of functional layers disposed between the anode 101 and the cathode 102. At least one of the multiple functional layers is prepared by a film-forming process using any of the compositions described above, or at least one of the multiple functional layers is prepared by a thin film preparation method described above, or at least one of the multiple functional layers is a thin film described above. This enhances the conjugation effect of the at least one functional layer, weakens energy level oscillations and reduces electron-phonon coupling, thereby reducing non-adiabatic coupling, effectively suppressing non-radiative recombination, promoting electron-hole transport balance in the optoelectronic device 10, and thus improving the device efficiency and device lifetime of the optoelectronic device 10.

[0088] In some embodiments of this application, see further reference. Figure 1 The multiple functional layers include a hole functional layer 105, which is prepared by a film-forming process from any of the compositions described above, or by a thin film preparation method described above, or the hole functional layer 105 is a thin film as described above, which can improve the hole injection and hole transport capabilities of the hole functional layer.

[0089] In some embodiments of this application, the materials of the anode 101 and the cathode 102 are independently selected from one or more of a second metal, carbon materials, and metal oxide materials. The metal includes, but is not limited to, one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg. The carbon materials include, but are not limited to, one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The metal oxide materials include, but are not limited to, one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), TiO2, SnO2, ZnO, and In2O3.

[0090] The anode 101 or cathode 102 can also be a composite electrode, which has a sandwich-like structure. The upper and lower layers are independently selected from metal oxides or metal sulfides, and the middle layer is a metal, such as one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. The thickness of the middle layer does not exceed 35 nm. The thickness of the anode 101 can be, for example, 20 nm to 300 nm, and the thickness of the cathode 102 can be, for example, 20 nm to 300 nm.

[0091] In some embodiments of this application, the optoelectronic device is an upright structure. When the hole functional layer 105 is a thin film as described above, the side of the hole functional layer 105 near the anode 101 is the second surface, and the side of the hole functional layer 105 near the cathode 102 is the first surface. Along the direction from the first surface to the second surface, the content of the second electron-donating groups in the hole functional layer 105 tends to increase. The material of the anode 101 includes a metal oxide material, which makes the anode 101 have a large number of oxygen vacancy defects. Therefore, at least a portion of the second electron-donating groups are bonded to the side of the anode 101 near the hole functional layer 105 through chemical bonds and / or adsorption. In other words, the hole functional layer may include a first sublayer and a second sublayer. The first sublayer is closer to the anode 101 than the second sublayer. The material of the first sublayer includes a second electron-donating group and a p-type metal oxide, and at least a portion of the second electron-donating group is bonded to the side of the anode 101 near the hole functional layer 105. The material of the second sublayer includes a p-type metal oxide, so that the hole functional layer has a gradient energy level, which promotes hole injection and further enhances the hole transport capability of the hole functional layer 105.

[0092] It should be noted that in some existing optoelectronic devices (such as quantum dot light-emitting diodes), the hole functional layer is generally a multi-layer structure, including a hole injection layer and a hole transport layer, to improve the hole injection level of the optoelectronic device. However, the fabrication of multi-layer structures is cumbersome and introduces more interface defects. In addition, the commonly used hole injection material is poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS, CAS number 155090-83-8), which easily corrodes other functional layers. In the embodiments of this application, the hole functional layer 105 can be directly formed in one step by a metal-organic compound including a first electron-donating group using a combustion synthesis reaction. This simplifies the fabrication process of the optoelectronic device and eliminates the need for PEDOT:PSS, effectively improving the hole transport capability and performance stability of the hole functional layer and avoiding damage to other functional layers caused by high temperature or PEDOT:PSS.

[0093] Furthermore, in the embodiments of this application, when the composition used to prepare the hole functional layer 105 further includes a boron organic compound or the hole functional layer 105 includes a boron-doped p-type metal oxide, the hole injection level of the optoelectronic device 10 can be further improved. This may be because: p-type doping can impart a reduction potential to the material, generating free holes in the p-type metal oxide, thereby enhancing the ohmic contact characteristics between the hole functional layer 105 and the anode 101; in addition, the hole aggregation interface formed by p-type doping can cause the energy band of the p-type doped region to bend downward, increasing the probability that holes at the anode 101 will be injected into the hole functional layer 105 through tunneling.

[0094] In some embodiments of this application, multiple functional layers include a light-emitting layer 103. For the optoelectronic device 10, which includes a hole functional layer 105, please refer to [the relevant documentation]. Figure 1 The light-emitting layer 103 is disposed between the hole functional layer 105 and the cathode 102. The light-emitting material of the light-emitting layer 103 includes one or more of organic light-emitting materials and quantum dots, and the thickness of the light-emitting layer 103 is, for example, 10 nm to 100 nm.

[0095] Among them, organic light-emitting materials include, but are not limited to, one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridinium(III), 4,4',4”-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid local charge transfer excited state materials, excitopolymer light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.

[0096] Quantum dots include, but are not limited to, one or more of red, green, and blue quantum dots, and include, but are not limited to, single-component quantum dots, core-shell quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, wherein the shell of the core-shell quantum dot has one or more layers. The average particle size of the quantum dots can be, for example, 2 nm to 20 nm, with examples being 2 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 15 nm, 20 nm, or any value between any two of the aforementioned values.

[0097] For single-component quantum dots and core-shell quantum dots, the material of the single-component quantum dot, the material of the core of the core-shell quantum dot, or the material of the shell of the core-shell quantum dot includes, but is not limited to, at least one of group II-VI compounds, group III-V compounds, group III-VI compounds, group IV-VI compounds, or group I-III-VI compounds. Among them, the II-VI group compounds include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. III-VI group compounds include, but are not limited to, one or more of In2S3, In2Se3, InGaS3, and InGaSe3. III-V group compounds include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. Group IV-VI compounds include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. Group I-III-VI compounds include, but are not limited to, one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2.

[0098] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. It should be noted that in the core-shell structured quantum dots, " / " represents a shell. Taking CdSe / CdSeS / CdS as an example, CdSe is the quantum dot core, CdSeS is the first shell, and CdS is the second shell.

[0099] For inorganic perovskite quantum dots, the general structural formula is AMX3, where A is Cs. + M is a divalent metal cation, and M includes, but is not limited to, Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ X is a halide anion, including but not limited to Cl. - ,Br - Or I - .

[0100] For organic perovskite quantum dots, the general structural formula is CMX3, where C is a formamidinyl group and M is a divalent metal cation, including but not limited to Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ X is a halide anion, including but not limited to Cl. - ,Br - Or I - .

[0101] For organic-inorganic hybrid perovskite quantum dots, the general structural formula is BMX3, where B is selected from organic amine cations, including but not limited to CH3(CH2). n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, and M includes, but is not limited to, Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ X is a halide anion, including but not limited to Cl. - ,Br - Or I - When n=2, the inorganic metal halide octahedrons MX64- are connected by a common vertex, with the metal cation M located at the body center of the halogen octahedron and the organic amine cation B filling the gaps between the octahedrons, forming an infinitely extended three-dimensional structure. When n>2, the inorganic metal halide octahedrons MX64- connected by a common vertex extend in the two-dimensional direction to form a layered structure, with organic amine cation bilayers (protonated monoamines) or organic amine cation monolayers (protonated diamines) inserted between the layers. The organic and inorganic layers overlap to form a stable two-dimensional layered structure.

[0102] When the material of the light-emitting layer 103 includes quantum dots, in order to improve the solution processing performance of the quantum dots and further enhance the photoelectric performance of the optoelectronic device 10, in some embodiments of this application, ligands are also attached to the surface of the quantum dots. The ligands can be common ligands in the art, including but not limited to C1 to C2. 30 aliphatic carboxylic acid ligands, C6-C 30 Aromatic carboxylic acid ligands, C1-C 30 Aliphatic thiol ligands, C6-C 30 Thiol aromatic ligands, C1-C 30 fatty amine ligands, C6-C 30 Aromatic amine ligands, C1-C 30 Aliphatic phosphine ligands, C6~C 30 Aromatic phosphine ligands and C6-C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0103] Among them, C1~C 30 The aliphatic carboxylic acid ligands include, but are not limited to, one or more of the following: octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, teicosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; C6~C 30 Aromatic carboxylic acid ligands include, but are not limited to, one or more of benzoic acid, biphenylic acid, and 1-naphthoic acid. (C1-C2) 30 The aliphatic thiol ligands include, but are not limited to, one or more of hexamethylenetetramine, octanethiol, nonanethiol, decanethiol, undecylthiol, dodecathiol, hexadecylthiol, and octadecylthiol, C6–C6. 30 Thiol aromatic ligands include, but are not limited to, one or more of benzenethiol, triphenylmethanethiol, and p-terphenyl-4,4”-dithiol. C1~C 30 The aliphatic amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, trideamine, tetradeamine, pentadecylamine, hexadecylamine, heptadecanamine, octadecylamine, and oleylamine, C6-C6. 30 The aromatic amine ligands include, but are not limited to, one or more of aniline, indenepropylamine, 4-octylaniline, and benzidine. (C1-C2) 30 The aliphatic phosphine ligands include, but are not limited to, one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, and tridecylphosphine oxide, C6–C6. 30 Aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphineethyl)phenylphosphine and triphenylphosphine oxide, C6-C6. 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and ethyl diphenyl phosphate. Halogen ligands include, but are not limited to, -Cl, -F, -I, or -Br.

[0104] In some embodiments of this application, multiple functional layers include an electronic functional layer 104. For the optoelectronic device 10, which includes a hole functional layer 105 and a light-emitting layer 103, please refer to [the relevant documentation]. Figure 1 The electronic functional layer 104 is disposed between the light-emitting layer 103 and the cathode 102.

[0105] The electronic functional layer 104 can be a single-layer or multi-layer structure, and its thickness is, for example, 10 nm to 100 nm. When the electronic functional layer 104 is a multi-layer structure, it may include one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For an electronic functional layer 104 including an electron injection layer, an electron transport layer, and a hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the electron injection layer is closer to the cathode 102 than the hole blocking layer. For an electronic functional layer 104 including an electron transport layer and a hole blocking layer, the electron transport layer is closer to the cathode 102 than the hole blocking layer. For an electronic functional layer 104 including an electron injection layer and an electron transport layer, the electron injection layer is closer to the cathode 102 than the electron transport layer.

[0106] The electronic functional layer material includes one or more of a first material and a second material. The first material includes one or more of a first inorganic material, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, and a group IB-IIIA-VIA semiconductor material. The first inorganic material includes one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2. The group IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS. The group IIIA-VA semiconductor material includes one or more of InP and GaP. The group IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS. The second inorganic material includes at least one doped second inorganic compound. The host compound of the doped second inorganic compound includes one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2. The doping element of the doped second inorganic compound includes one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In, and Sn. The doped second inorganic compound is selected from one or more of zinc magnesium oxide, zinc calcium oxide, zinc zirconium oxide, zinc gallium oxide, zinc aluminum oxide, zinc lithium oxide, zinc titanium oxide, yttrium zinc oxide, indium tin oxide, and lithium titanium oxide, for example, Zn. (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Al (1-x) Zn x O, Zn(1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where x represents the molar quantity, and 0 < x ≤ 0.5.

[0107] It is understood that the optoelectronic device 10 may also include a substrate, which is disposed on the side of the anode 101 away from the multiple functional layers or on the side of the cathode 102 away from the multiple functional layers. The substrate may be a rigid substrate or a flexible substrate. The material of the rigid substrate includes, but is not limited to, one or more of glass, ceramic and silicon wafer. The material of the flexible substrate includes, but is not limited to, one or more of polyimide, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate and polyethersulfone.

[0108] This application also provides a method for fabricating an optoelectronic device, which can be used to fabricate any of the optoelectronic devices described above. The method for fabricating the optoelectronic device includes the following steps:

[0109] S1. Provide a first electrode, and form multiple functional layers on one side of the first electrode;

[0110] S2. A second electrode is formed on the side of the multiple functional layers away from the first electrode.

[0111] In this embodiment, at least one of the multiple functional layers is prepared by a film-forming process using the composition described in any of the preceding descriptions, or at least one of the multiple functional layers is prepared by a film preparation method described in any of the preceding descriptions.

[0112] In some embodiments of this application, the plurality of functional layers include a hole functional layer, which is prepared by a film-forming process from any of the compositions described above, or by a film preparation method described above.

[0113] In some embodiments of this application, when the first electrode is an anode and the second electrode is a cathode, the step of forming multiple functional layers includes: sequentially forming a hole functional layer, a light-emitting layer, and an electron functional layer on one side of the first electrode; and forming the second electrode on the side of the electron functional layer away from the light-emitting layer.

[0114] In some other embodiments of this application, when the first electrode is a cathode and the second electrode is an anode, the step of forming multiple functional layers includes: sequentially forming an electronic functional layer, a light-emitting layer and a hole functional layer on one side of the first electrode; and forming the second electrode on the side of the hole functional layer away from the light-emitting layer.

[0115] It should be noted that, apart from functional layers prepared by film-forming processes using any of the compositions described above or functional layers prepared by any of the thin film preparation methods described above, the preparation methods for each functional layer in the optoelectronic device 10 include, but are not limited to, chemical and / or physical methods. Chemical methods include, but are not limited to, one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include, but are not limited to, physical deposition and solution methods. Physical deposition methods include, but are not limited to, one or more of thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. Solution methods include, but are not limited to, one or more of spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spray coating, roller coating, casting, slot coating, and strip coating. After the various functional layers of the optoelectronic device are fabricated, an encapsulation process is required. Encapsulation can be performed using conventional machine encapsulation or manual encapsulation. In the encapsulation environment, both oxygen and water content must be below 0.1 ppm to ensure the stability of the optoelectronic device. Specifically, the encapsulation material used to form the encapsulation layer is selected from one or more of ultraviolet adhesive, metal thin film, and glass adhesive. As an example, the encapsulation material is acrylic resin or epoxy resin.

[0116] This application also provides an electronic device, which includes any of the optoelectronic devices described above. The electronic device can be, for example, any electronic product with a display function, including but not limited to smartphones, tablet personal computers, mobile phones, video phones, e-book readers, laptop PCs, netbook computers, workstations, servers, personal digital assistants, portable multimedia players, MP3 players, mobile medical devices, cameras, game consoles, digital cameras, car navigation systems, electronic billboards, ATMs, smart bracelets, smartwatches, virtual reality (VR) devices, or wearable devices.

[0117] The technical solutions and effects of this application will be described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of this application and are not intended to limit this application.

[0118] Example 1

[0119] This embodiment provides an optoelectronic device and its fabrication method. The optoelectronic device is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 1 As shown, the optoelectronic device 10 includes an anode 101, multiple functional layers, and a cathode 102 stacked sequentially. From bottom to top, the multiple functional layers include a hole functional layer 105, a light-emitting layer 103, and an electron functional layer 104 stacked sequentially. The hole functional layer 105 is closer to the anode 101 than the electron functional layer 104. The light-emitting area of ​​the optoelectronic device 10 is 3.14 mm². 2 .

[0120] The materials and thicknesses of each layer in optoelectronic device 10 are as follows:

[0121] The anode 101 is made of ITO and has a thickness of 50 nm.

[0122] The cathode 102 is made of Ag and has a thickness of 100 nm.

[0123] The material of the light-emitting layer 103 includes Cd 0.9 Zn 0.1 Se / Cd 0.5 Zn 0.5 S / Cd 0.5 Zn 0.5 Se / ZnS quantum dots, the quantum dots emit red light, the quantum dots emit light at a wavelength of 621 nm, and the thickness of the emitting layer 103 is 18 nm;

[0124] The material of electronic functional layer 104 includes nano-Zn 0.85 Mg 0.15 O (average particle size is 5nm), and the thickness of the electronic functional layer 104 is 35nm;

[0125] The hole functional layer 105 is made of copper oxide and has a thickness of 20 nm.

[0126] The method for fabricating the optoelectronic device in this embodiment includes the following steps:

[0127] S1.1 Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a small amount of soapy water using a cotton swab to remove visible impurities, and then sequentially ultrasonically clean the substrate including ITO with detergent for 20 min, ultrasonically clean with acetone for 20 min, ultrasonically clean with deionized water for 20 min, and ultrasonically clean with ethanol for 20 min. After drying, treat with oxygen plasma for 10 min, and then treat with ultraviolet-ozone surface for 15 min to obtain a substrate including an anode.

[0128] S1.2 In an air environment with normal temperature and pressure, spin-coat the composition on the side of the anode away from the substrate, and then heat-treat the spin-coated composition at 180°C for 30 minutes in an air environment to obtain the hole functional layer. Then, use ultraviolet-ozone to perform surface treatment on the prefabricated device including the substrate, anode and hole functional layer for 10 minutes.

[0129] S1.3 Under a nitrogen atmosphere at normal temperature and pressure, spin-coat Cd onto the side of the hole functional layer furthest from the anode. 0.9 Zn 0.1 Se / Cd 0.5 Zn 0.5 S / Cd 0.5 Zn 0.5 Se / ZnS quantum dot solution (quantum dot concentration of 30 mg / mL, solvent of n-octane), and then the spin-coated quantum dot solution was heat-treated at 100 °C for 5 min in a nitrogen atmosphere to obtain the light-emitting layer;

[0130] S1.4. Under a nitrogen atmosphere at room temperature and pressure, spin-coat nano-Zn onto the side of the luminescent layer furthest from the hole functional layer. 0.85 Mg 0.15 O solution (nano Zn) 0.85 Mg 0.15 The concentration of O was 30 mg / mL, and the solvent was ethanol. Then, the spin-coated quantum dot solution was subjected to constant temperature heat treatment at 100 °C for 15 min in a nitrogen atmosphere to obtain an electronic functional layer.

[0131] S1.5. Place the laminated structure obtained after completing step S1.4 in a vacuum environment with a vacuum level not exceeding 3 × 10⁻⁶. -4 In the vapor deposition chamber of Pa, Ag is thermally vaporized on the side of the electronic functional layer away from the light-emitting layer through a mask to obtain the cathode, and then encapsulated with epoxy resin to obtain the optoelectronic device.

[0132] The preparation method of the composition in step S1.3 includes the following steps: 100 mg of bis(dimethylamino-2-propoxy)copper(II) (an organocopper compound, CAS No. 185827-91-2) is dispersed in 5 mL of dimethyl sulfoxide to obtain an organocopper compound solution with a concentration of 20 mg / mL; then, hydrogen peroxide (a combustion agent) and acetylacetone (an additive) are added to the organocopper compound solution, wherein the mass ratio of the organocopper compound to hydrogen peroxide is 1:0.05 and the mass ratio of the organocopper compound to acetylacetone is 1:0.04, and the mixture is stirred continuously at room temperature for 4 h to obtain the composition.

[0133] Example 2

[0134] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the difference lies in the composition used to prepare the hole functional layer. The thickness of the hole functional layer in this embodiment remains the same as in Embodiment 1.

[0135] Compared to the preparation method of the composition in Example 1, the difference in the preparation method of the composition in this example is that the mass ratio of the copper organic compound to hydrogen peroxide is replaced with "1:0.08".

[0136] Compared with the method for fabricating optoelectronic devices in Example 1, the method for fabricating optoelectronic devices in this example differs in that step S1.2 is replaced with "In an air environment at room temperature and pressure, spin-coating the composition of this example on the side of the anode away from the substrate, and then subjecting the spin-coated composition to a constant temperature heat treatment of 180°C for 30 minutes in an air environment to obtain a hole functional layer, and then using ultraviolet-ozone to perform surface treatment on the prefabricated device including the substrate, anode and hole functional layer for 10 minutes".

[0137] Example 3

[0138] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the difference lies in the composition used to prepare the hole functional layer. The thickness of the hole functional layer in this embodiment remains the same as in Embodiment 1.

[0139] Compared to the preparation method of the composition in Example 1, the difference in the preparation method of the composition in this example is that the mass ratio of the copper organic compound to hydrogen peroxide is replaced with "1:0.1".

[0140] Compared with the method for fabricating optoelectronic devices in Example 1, the method for fabricating optoelectronic devices in this example differs in that step S1.2 is replaced with "In an air environment at room temperature and pressure, spin-coating the composition of this example on the side of the anode away from the substrate, and then subjecting the spin-coated composition to a constant temperature heat treatment of 180°C for 30 minutes in an air environment to obtain a hole functional layer, and then using ultraviolet-ozone to perform surface treatment on the prefabricated device including the substrate, anode and hole functional layer for 10 minutes".

[0141] Example 4

[0142] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the difference lies in the composition used to prepare the hole functional layer. The thickness of the hole functional layer in this embodiment remains the same as in Embodiment 1.

[0143] Compared to the preparation method of the composition in Example 1, the difference in the preparation method of the composition in this example is that the mass ratio of the copper organometallic compound to hydrogen peroxide is replaced with "1:0.08", and the mass ratio of the copper organometallic compound to acetylacetone is replaced with "1:0.02".

[0144] Compared with the method for fabricating optoelectronic devices in Example 1, the method for fabricating optoelectronic devices in this example differs in that step S1.2 is replaced with "In an air environment at room temperature and pressure, spin-coating the composition of this example on the side of the anode away from the substrate, and then subjecting the spin-coated composition to a constant temperature heat treatment of 180°C for 30 minutes in an air environment to obtain a hole functional layer, and then using ultraviolet-ozone to perform surface treatment on the prefabricated device including the substrate, anode and hole functional layer for 10 minutes".

[0145] Example 5

[0146] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the difference lies in the composition used to prepare the hole functional layer. The thickness of the hole functional layer in this embodiment remains the same as in Embodiment 1.

[0147] Compared to the preparation method of the composition in Example 1, the difference in the preparation method of the composition in this example is that the mass ratio of the copper organometallic compound to hydrogen peroxide is replaced with "1:0.08", and the mass ratio of the copper organometallic compound to acetylacetone is replaced with "1:0.08".

[0148] Compared with the method for fabricating optoelectronic devices in Example 1, the method for fabricating optoelectronic devices in this example differs in that step S1.2 is replaced with "In an air environment at room temperature and pressure, spin-coating the composition of this example on the side of the anode away from the substrate, and then subjecting the spin-coated composition to a constant temperature heat treatment of 180°C for 30 minutes in an air environment to obtain a hole functional layer, and then using ultraviolet-ozone to perform surface treatment on the prefabricated device including the substrate, anode and hole functional layer for 10 minutes".

[0149] Example 6

[0150] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the difference lies in the composition used to prepare the hole functional layer. The thickness of the hole functional layer in this embodiment remains the same as in Embodiment 1.

[0151] Compared to the preparation method of the composition in Example 1, the difference in the preparation method of the composition in this example is that the mass ratio of the copper organic compound to hydrogen peroxide is replaced with "1:0.08".

[0152] Compared with the method for fabricating optoelectronic devices in Example 1, the method for fabricating optoelectronic devices in this example differs in that step S1.2 is replaced with "In an air environment at room temperature and pressure, the composition of this example is spin-coated on the side of the anode away from the substrate, and then the spin-coated composition is subjected to constant temperature heat treatment at 120°C for 30 minutes in an air environment to obtain a hole functional layer, and then the surface of the prefabricated device including the substrate, anode and hole functional layer is treated with ultraviolet-ozone for 10 minutes".

[0153] Example 7

[0154] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the difference lies in the composition used to prepare the hole functional layer. The thickness of the hole functional layer in this embodiment remains the same as in Embodiment 1.

[0155] Compared to the preparation method of the composition in Example 1, the difference in the preparation method of the composition in this example is that the mass ratio of the copper organic compound to hydrogen peroxide is replaced with "1:0.08".

[0156] Compared with the method for fabricating optoelectronic devices in Example 1, the method for fabricating optoelectronic devices in this example differs in that step S1.2 is replaced with "In an air environment at room temperature and pressure, the composition of this example is spin-coated on the side of the anode away from the substrate, and then the spin-coated composition is subjected to constant temperature heat treatment at 250°C for 30 minutes in an air environment to obtain a hole functional layer, and then the surface of the prefabricated device including the substrate, anode and hole functional layer is treated with ultraviolet-ozone for 10 minutes".

[0157] Example 8

[0158] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is that the composition used to prepare the hole functional layer is different, and the thickness of the hole functional layer is replaced with "10nm".

[0159] Compared to the preparation method of the composition in Example 1, the difference in the preparation method of the composition in this example is that the mass ratio of the copper organic compound to hydrogen peroxide is replaced with "1:0.08".

[0160] Compared with the method for fabricating optoelectronic devices in Example 1, the method for fabricating optoelectronic devices in this example differs in that step S1.2 is replaced with "In an air environment at room temperature and pressure, spin-coating the composition of this example on the side of the anode away from the substrate, and then subjecting the spin-coated composition to a constant temperature heat treatment of 180°C for 30 minutes in an air environment to obtain a hole functional layer, and then using ultraviolet-ozone to perform surface treatment on the prefabricated device including the substrate, anode and hole functional layer for 10 minutes".

[0161] Example 9

[0162] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is that the composition used to prepare the hole functional layer is different, and the thickness of the hole functional layer is replaced with "40nm".

[0163] Compared to the preparation method of the composition in Example 1, the difference in the preparation method of the composition in this example is that the mass ratio of the copper organic compound to hydrogen peroxide is replaced with "1:0.08".

[0164] Compared with the method for fabricating optoelectronic devices in Example 1, the method for fabricating optoelectronic devices in this example differs in that step S1.2 is replaced with "In an air environment at room temperature and pressure, spin-coating the composition of this example on the side of the anode away from the substrate, and then subjecting the spin-coated composition to a constant temperature heat treatment of 180°C for 30 minutes in an air environment to obtain a hole functional layer, and then using ultraviolet-ozone to perform surface treatment on the prefabricated device including the substrate, anode and hole functional layer for 10 minutes".

[0165] Example 10

[0166] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the difference lies in that the material of the hole functional layer in this embodiment includes manganese oxide. The thickness of the hole functional layer in this embodiment is consistent with that in Embodiment 1.

[0167] Compared with the method for fabricating optoelectronic devices in Example 1, the method for fabricating optoelectronic devices in this example differs in that step S1.2 is replaced with "In an air environment at room temperature and pressure, spin-coating the composition of this example on the side of the anode away from the substrate, and then subjecting the spin-coated composition to a constant temperature heat treatment of 180°C for 30 minutes in an air environment to obtain a hole functional layer, and then using ultraviolet-ozone to perform surface treatment on the prefabricated device including the substrate, anode and hole functional layer for 10 minutes".

[0168] The preparation method of the composition in this embodiment includes the following steps: 100 mg of bis(N,N”-diisopropylpentamido)manganese(II) (organic manganese compound, CAS No. 1188406-04-3) is dispersed in 5 mL of N,N-dimethylformamide to obtain an organic manganese compound solution with a concentration of 20 mg / mL; then, urea (combustion agent) and 2,3-butanedione (additive) are added to the organic manganese compound solution, wherein the mass ratio of organic manganese compound to urea is 1:0.08, and the mass ratio of organic manganese compound to 2,3-butanedione is 1:0.04, and the mixture is stirred continuously at room temperature for 4 h to obtain the composition.

[0169] Example 11

[0170] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the difference lies in that the material of the hole functional layer in this embodiment includes chromium oxide. The thickness of the hole functional layer in this embodiment is consistent with that in Embodiment 1.

[0171] Compared with the method for fabricating optoelectronic devices in Example 1, the method for fabricating optoelectronic devices in this example differs in that step S1.2 is replaced with "In an air environment at room temperature and pressure, spin-coating the composition of this example on the side of the anode away from the substrate, and then subjecting the spin-coated composition to a constant temperature heat treatment of 180°C for 30 minutes in an air environment to obtain a hole functional layer, and then using ultraviolet-ozone to perform surface treatment on the prefabricated device including the substrate, anode and hole functional layer for 10 minutes".

[0172] The preparation method of the composition in this embodiment includes the following steps: 100 mg of di(ethylcyclopentadienyl)chromium (organic chromium compound, CAS No. 55940-03-9) is dispersed in 5 mL of N,N-dimethylformamide to obtain an organic chromium compound solution with a concentration of 20 mg / mL; then, citric acid (combustion agent) and 2,3-octanedione (additive) are added to the organic chromium compound solution, wherein the mass ratio of organic chromium compound to citric acid is 1:0.08, and the mass ratio of organic chromium compound to 2,3-octanedione is 1:0.04, and the mixture is stirred continuously at room temperature for 4 h to obtain the composition.

[0173] Example 12

[0174] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the difference in this embodiment is that the quantum dots in the light-emitting layer are replaced with "Cd". 0.6 Zn 0.4 Se / ZnSe / Cd 0.1 Zn 0.9 The Se / ZnS quantum dots, which emit green light and have an emission wavelength of 543 nm, are different from the composition used to prepare the hole functional layer. In this embodiment, the thickness of the light-emitting layer and the thickness of the hole functional layer of the optoelectronic device are the same as in Example 1.

[0175] Compared to the preparation method of the composition in Example 1, the difference in the preparation method of the composition in this example is that the mass ratio of the copper organic compound to hydrogen peroxide is replaced with "1:0.08".

[0176] Compared to the method for fabricating the optoelectronic device in Example 1, the method for fabricating the optoelectronic device in this example differs in that: step S1.2 is replaced with "in an air environment at room temperature and pressure, the composition of this example is spin-coated on the side of the anode away from the substrate, and then the spin-coated composition is subjected to a constant temperature heat treatment of 180°C for 30 minutes in an air environment to obtain a hole functional layer, and then the prefabricated device including the substrate, anode and hole functional layer is surface-treated with ultraviolet-ozone for 10 minutes", and "Cd" in step S1.3 is replaced with "Cd0.9 Zn 0.1 Se / Cd 0.5 Zn 0.5 S / Cd 0.5 Zn 0.5 Replace "Se / ZnS quantum dot solution" with "Cd". 0.6 Zn 0.4 Se / ZnSe / Cd 0.1 Zn 0.9 Se / ZnS quantum dot solution (quantum dot concentration of 30 mg / mL, solvent is n-octane)".

[0177] Example 13

[0178] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Embodiment 1, the difference in this embodiment is that the quantum dots in the light-emitting layer are replaced with "Cd". 0.2 Zn 0.8 Se / Cd 0.3 SeZn 0.7 The composition used to prepare the hole functional layer differs from that of the ZnSe / ZnS quantum dots, which emit blue light at a wavelength of 472 nm. However, the thickness of the light-emitting layer and the hole functional layer in this embodiment are the same as in Example 1.

[0179] Compared to the preparation method of the composition in Example 1, the difference in the preparation method of the composition in this example is that the mass ratio of the copper organic compound to hydrogen peroxide is replaced with "1:0.08".

[0180] Compared to the method for fabricating the optoelectronic device in Example 1, the method for fabricating the optoelectronic device in this example differs in that: step S1.2 is replaced with "in an air environment at room temperature and pressure, the composition of this example is spin-coated on the side of the anode away from the substrate, and then the spin-coated composition is subjected to a constant temperature heat treatment of 180°C for 30 minutes in an air environment to obtain a hole functional layer, and then the prefabricated device including the substrate, anode and hole functional layer is surface-treated with ultraviolet-ozone for 10 minutes", and "Cd" in step S1.3 is replaced with "Cd 0.9 Zn 0.1 Se / Cd 0.5 Zn 0.5 S / Cd 0.5 Zn 0.5 Replace "Se / ZnS quantum dot solution" with "Cd". 0.2 Zn 0.8 Se / Cd 0.3 SeZn 0.7 / ZnSe / ZnS quantum dot solution (quantum dot concentration is 30 mg / mL, solvent is n-octane)".

[0181] Example 14

[0182] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the difference lies in the composition used to prepare the hole functional layer. The thickness of the hole functional layer in this embodiment remains the same as in Embodiment 1.

[0183] Compared with the preparation method of the composition in Example 1, the preparation method of the composition in this example is different in that: "100 mg of bis(dimethylamino-2-propoxy)copper(II)" is replaced with "100 mg of (2,4,6-trimethylphenyl)copper(I) (organic copper compound, CAS No. 75732-01-3)", and the mass ratio of the organic copper compound to hydrogen peroxide is replaced with "1:0.08".

[0184] Example 15

[0185] This embodiment provides an optoelectronic device and its fabrication method. Compared to the optoelectronic device in Embodiment 1, the difference lies in that the material of the hole functional layer in this embodiment includes boron-doped copper oxide. The thickness of the hole functional layer in this embodiment is consistent with that in Embodiment 1.

[0186] Compared with the method for fabricating optoelectronic devices in Example 1, the method for fabricating optoelectronic devices in this example differs in that step S1.2 is replaced with "In an air environment at room temperature and pressure, spin-coating the composition of this example on the side of the anode away from the substrate, and then subjecting the spin-coated composition to a constant temperature heat treatment of 180°C for 30 minutes in an air environment to obtain a hole functional layer, and then using ultraviolet-ozone to perform surface treatment on the prefabricated device including the substrate, anode and hole functional layer for 10 minutes".

[0187] The preparation method of the composition in this embodiment includes the following steps: 100 mg of bis(dimethylamino-2-propoxy)copper(II) is dispersed in 5 mL of dimethyl sulfoxide to obtain a copper organic compound solution with a concentration of 20 mg / mL; then, hydrogen peroxide (combustion agent), acetylacetone (additive) and tetra(dimethylamino)diboron are added to the copper organic compound solution, wherein the mass ratio of copper organic compound to hydrogen peroxide is 1:0.05, the mass ratio of copper organic compound to acetylacetone is 1:0.04, and the mass ratio of copper organic compound to tetra(dimethylamino)diboron is 1:0.04, and the mixture is stirred continuously at room temperature for 4 h to obtain the composition.

[0188] Comparative Example 1

[0189] This comparative example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Example 1, the difference between the optoelectronic device in this comparative example and the optoelectronic device in Example 1 is that the composition used to prepare the hole functional layer is different.

[0190] Compared to the preparation method of the composition in Example 1, the only difference in the preparation method of the composition in this example is that acetylacetone is not added.

[0191] Compared with the method for preparing the optoelectronic device in Example 1, the method for preparing the optoelectronic device in this comparative example differs in that step S1.2 is replaced with "In an air environment at room temperature and pressure, spin-coating the composition of this comparative example on the side of the anode away from the substrate, and then subjecting the spin-coated composition to a constant temperature heat treatment of 180°C for 30 minutes in an air environment to obtain a hole functional layer, and then using ultraviolet-ozone to perform surface treatment on the prefabricated device including the substrate, anode and hole functional layer for 10 minutes".

[0192] Comparative Example 2

[0193] This comparative example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Example 1, the difference between the optoelectronic device in this comparative example and the optoelectronic device in Example 1 is that the composition used to prepare the hole functional layer is different.

[0194] Compared to the preparation method of the composition in Example 1, the only difference in the preparation method of the composition in this example is that hydrogen peroxide is not added.

[0195] Compared with the method for preparing the optoelectronic device in Example 1, the method for preparing the optoelectronic device in this comparative example differs in that step S1.2 is replaced with "In an air environment at room temperature and pressure, spin-coating the composition of this comparative example on the side of the anode away from the substrate, and then subjecting the spin-coated composition to a constant temperature heat treatment of 180°C for 30 minutes in an air environment to obtain a hole functional layer, and then using ultraviolet-ozone to perform surface treatment on the prefabricated device including the substrate, anode and hole functional layer for 10 minutes".

[0196] Comparative Example 3

[0197] This comparative example provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Example 1, the difference in this comparative example is that the material of the hole functional layer includes CuO. x Nanoparticles. The thickness of the hole functional layer in the optoelectronic device in the comparative example is the same as that in Example 1.

[0198] CuO x The preparation method of nanoparticles includes the following steps: Add an appropriate amount of copper nitrate to 30 mL of 2-methoxyethanol (CAS No. 109-86-4), dissolve to obtain a 1 mol / L copper nitrate solution, then add 0.015 mmol of sodium citrate to the copper nitrate solution to obtain a copper precursor solution; dissolve an appropriate amount of sodium hydroxide in 5 mL of ethanol to obtain a 10 mol / L alkaline solution; add the alkaline solution to the copper precursor solution until copper ions react with OH-. - The molar ratio between the two components was 1:1.8, the pH was 13, and the mixture was stirred at 80°C for 1 hour to obtain the reaction product. The reaction product was placed in excess ethyl acetate to form a precipitate, which was then centrifuged. The supernatant was discarded and the precipitate was collected. The collected precipitate was CuO. x Nanoparticles.

[0199] Compared to the method for fabricating the optoelectronic device in Example 1, the method for fabricating the optoelectronic device in this example differs in that step S1.2 is replaced with "spin-coating CuO on the side of the anode away from the substrate under a nitrogen atmosphere at room temperature and pressure". x Nanoparticle solution (CuO) x The concentration of nanoparticles was 20 mg / mL, and the solvent was ethanol. Then, CuO was spin-coated under a nitrogen atmosphere. x The nanoparticle solution was subjected to constant temperature heat treatment at 150℃ for 30 min to obtain a hole functional layer.

[0200] Comparative Example 4

[0201] This comparative example provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Example 1, the difference in this comparative example is that the material of the hole functional layer includes MnO. x Nanoparticles. The thickness of the hole functional layer in the optoelectronic device in the comparative example is the same as that in Example 1.

[0202] Among them, MnO x The preparation method of nanoparticles includes the following steps: 150 mg of potassium permanganate and 50 mL of anhydrous ethanol are mixed and dissolved to obtain a manganese precursor solution; subsequently, 10 g of ammonium bicarbonate is placed in one beaker, and the previously prepared manganese precursor solution is placed in another beaker. Both beakers are then placed in a vacuum drying oven and reacted at atmospheric pressure and 140 °C to obtain the reaction product; the reaction product is centrifuged at 15000 r / min for 10 min, the supernatant is discarded, and the precipitate is collected. The collected precipitate is MnO. x Nanoparticles.

[0203] Compared to the method for fabricating the optoelectronic device in Example 1, the method for fabricating the optoelectronic device in this example differs in that step S1.2 is replaced with "spin-coating MnO on the side of the anode furthest from the substrate under a nitrogen atmosphere at room temperature and pressure". x Nanoparticle solution (MnO) x The concentration of nanoparticles was 20 mg / mL, and the solvent was ethanol. Then, the spin-coated MnO was subjected to a nitrogen atmosphere. x The nanoparticle solution was subjected to constant temperature heat treatment at 150℃ for 30 min to obtain a hole functional layer.

[0204] Comparative Example 5

[0205] This comparative example provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Example 1, the difference in this comparative example is that the material of the hole functional layer includes CrO. x Nanoparticles. The thickness of the hole functional layer in the optoelectronic device in the comparative example is the same as that in Example 1.

[0206] Among them, CrO x The preparation method of nanoparticles includes the following steps: A Cr(NO3)3·9H2O aqueous solution (Cr ion concentration of 20 mmol / L) is provided. 50 mL of the Cr(NO3)3·9H2O aqueous solution is placed in a microwave oven and heated at 800 W for 1 min. Heating is stopped when the solution boils and a large number of uniform bubbles appear. After removing the solution, 8 mL of sodium citrate aqueous solution (concentration of 20 mmol / L) is added to obtain a mixture. The mixture is then microwaved at 800 W for 1 min. The mixture is then removed and cooled to room temperature in the dark. The cooled product is centrifuged at 15000 r / min for 30 min. The supernatant is discarded, and the blue-green precipitate is collected. The precipitate is then washed twice with ultrapure water to obtain CrO2. x Nanoparticles.

[0207] Compared to the method for fabricating the optoelectronic device in Example 1, the method for fabricating the optoelectronic device in this example differs in that step S1.2 is replaced with "spin-coating CrO on the side of the anode furthest from the substrate under a nitrogen atmosphere at room temperature and pressure". x Nanoparticle solution (CrO) x The concentration of nanoparticles was 20 mg / mL, and the solvent was ethanol. Then, the CrO₂ was spin-coated under a nitrogen atmosphere. x The nanoparticle solution was subjected to constant temperature heat treatment at 150℃ for 30 min to obtain a hole functional layer.

[0208] Comparative Example 6

[0209] This comparative example provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Example 1, the difference in this comparative example is that the material of the hole functional layer includes CuO. x Nanoparticles, and replacing quantum dots in the light-emitting layer with "Cd" 0.6 Zn 0.4 Se / ZnSe / Cd 0.1 Zn 0.9 Se / ZnS quantum dots, the quantum dots emit green light, and the emission wavelength of the quantum dots is 543 nm. The thickness of the light-emitting layer of the optoelectronic device in this comparative example is the same as that in Example 1, and the thickness of the hole functional layer of the optoelectronic device in this comparative example is the same as that in Example 1.

[0210] CuO x Nanoparticles and CuO in Comparative Example 1 x The nanoparticles are the same, and the preparation method of the hole functional layer is the same as that of the hole functional layer in Comparative Example 1.

[0211] Comparative Example 7

[0212] This comparative example provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Example 1, the difference in this comparative example is that the material of the hole functional layer includes CuO. x Nanoparticles, and replacing quantum dots in the light-emitting layer with "Cd" 0.2 Zn 0.8 Se / Cd 0.3 SeZn 0.7 / ZnSe / ZnS quantum dots, the quantum dots emit blue light, and the emission wavelength of the quantum dots is 472nm. The thickness of the light-emitting layer of the optoelectronic device in this comparative example is the same as that in Example 1, and the thickness of the hole functional layer of the optoelectronic device in this comparative example is the same as that in Example 1.

[0213] CuO x Nanoparticles and CuO in Comparative Example 1 x The nanoparticles are the same, and the preparation method of the hole functional layer is the same as that of the hole functional layer in Comparative Example 1.

[0214] Experimental Example 1

[0215] In the fabrication process of the optoelectronic devices in Examples 2 and Comparative Examples 1 to 3, after the hole functional layer was fabricated, the surface roughness of the hole functional layer in each optoelectronic device was detected using an atomic force microscope (AFM). The detection results are shown in Table 1 below. Figure 10 As shown:

[0216] Table 1

[0217] Rq Ra Example 2 0.35nm 0.28nm Comparative Example 1 25.3nm 24.5nm Comparative Example 2 8.51nm 7.38nm Comparative Example 3 3.34nm 3.03nm

[0218] Note: Ra represents the arithmetic mean of the absolute values ​​of the height deviations relative to the central plane within the investigated area; Rq represents the root mean square value of the profile deviation from the mean line within the sampling length, and Rq is the root mean square parameter corresponding to Ra.

[0219] From Table 1 and Figure 10 It can be seen that, compared with the hole functional layer of the optoelectronic device in Comparative Examples 1 to 3, the surface flatness of the hole functional layer of the optoelectronic device in Example 2 is higher. The reason may be that: when the hole functional layer is prepared using the composition of the present application embodiment, the presence of electron-donating groups can improve the dispersibility of the organometallic compound in the composition, and during the heating film formation process, it can improve the phenomenon of crystallization and agglomeration, increase the spacing between crystals, and gradually crystallize downward from the residual solvent evaporation on the top surface of the "wet" film, thereby improving the film uniformity of the hole functional layer.

[0220] The surface smoothness of the hole functional layer of the optoelectronic device in Comparative Example 1 is low because the composition used to prepare the hole functional layer does not include additives (acetylacetone), and obvious agglomeration occurs during the film formation process.

[0221] The surface smoothness of the hole functional layer of the optoelectronic device in Comparative Example 2 is low because the composition used to prepare the hole functional layer does not include a combustion agent (hydrogen peroxide), thus it cannot crystallize into a film.

[0222] The low surface smoothness of the hole functional layer in the optoelectronic device in Comparative Example 3 is due to the fact that the CuO prepared using conventional methods... x Nanoparticles for preparing hole-functional layers, CuO x Nanoparticles have many defect states and are prone to aggregation in solution.

[0223] Experiment Example 2

[0224] The performance of the optoelectronic devices in Examples 1 to 15 and Comparative Examples 3 to 7 after 1 hour of encapsulation was tested. The performance tests were conducted at a temperature of 25°C and a relative humidity of 50%.

[0225] The photoelectric performance was tested using the Fostar FPD optical characteristic measurement equipment (an efficiency testing system consisting of components such as Ocean Optics USB2000, LabVIEW-controlled QE-PRO spectrometer, Keithley 2400, high-precision digital source meter Keithley 6485, 50μm inner diameter optical fiber, device test probes and fixtures, various connecting cables and data cards, efficiency test boxes, and data acquisition systems). Parameters such as the turn-on voltage, current, brightness, and emission spectrum of each photoelectric device were obtained. Then, key parameters such as external quantum efficiency and power efficiency were calculated, and the current density-external quantum efficiency (EQE) characteristic curves and voltage-current density characteristic curves of each photoelectric device were obtained.

[0226] The external quantum efficiency (EQE) is measured using an EQE optical testing instrument. It is the ratio of the number of electron-hole pairs injected into the quantum dot to the number of emitted photons, expressed as a percentage (%). The calculation formula is as follows:

[0227]

[0228] Where ηe is the optical output coupling efficiency, ηγ is the ratio of the number of recombinated carriers to the number of injected carriers, x is the ratio of the number of excitons that generate photons to the total number of excitons, KR is the radiative process rate, and KNR is the non-radiative process rate.

[0229] The device lifetime testing method includes the following steps: Under constant current (2mA) driving, electroluminescence lifetime analysis is performed on each optoelectronic device using lifetime testing equipment. The time (T95,h) required for each optoelectronic device to decay from its maximum brightness to 95% is recorded. Then, the device lifetime (T95@1000nit,h) at a brightness of 1000nit is obtained through the extended exponential decay brightness decay fitting formula. The calculation formula is as follows:

[0230]

[0231] Among them, T95 L For longer lifespan at low brightness, T95 H For the measured lifetime under high brightness, L H To accelerate the device to its maximum brightness, L L It is 1000 nits, and A is the acceleration factor with a value of 1.7.

[0232] The method for testing hole transport performance is as follows: A system for testing the efficiency of quantum dot light-emitting diodes (LEDs) is built using LabVIEW-controlled QE PRO and Keithley 2400. This system measures the current density-voltage curve of the single-hole device (HOD). The space charge confinement current (SCLC) region is obtained from the current density-voltage curve, and then the electron mobility is calculated using the following formula:

[0233] J=(9 / 8)ε r ε0μ e V2 / d 3 ;

[0234] Where J represents current density, in mA·cm. -2 ;ε r ε₀ represents the relative permittivity, and μ represents the vacuum permittivity. e Hole mobility is expressed in cm. 2 V -1 s -1 V represents the driving voltage, in volts (V); d represents the film thickness, in meters (m).

[0235] The only difference between the fabrication method of the single-hole device (HOD) and the fabrication method of the optoelectronic device in the corresponding embodiments or comparative examples is that the fabrication of the electronic functional layer is omitted. As an example, the method for detecting the hole mobility of the hole functional layer of the optoelectronic device in Example 1 is as follows: a single-hole device is fabricated (the electronic functional layer is omitted based on the optoelectronic device in Example 1), and then the hole mobility is detected and obtained according to the above method.

[0236] The performance test results of each optoelectronic device are shown in Table 2 below:

[0237] Table 2

[0238]

[0239] Note: The optoelectronic devices in Comparative Example 1 and Comparative Example 2 are faulty devices and cannot provide performance test data.

[0240] From Table 1 and Figures 2 to 9It can be seen that, compared with the optoelectronic device in Comparative Example 3, the optoelectronic devices in Examples 1 to 9, 14 and 15 have superior optoelectronic performance and device lifespan; compared with the optoelectronic device in Comparative Example 4, the optoelectronic device in Example 10 has superior optoelectronic performance and device lifespan; compared with the optoelectronic device in Comparative Example 5, the optoelectronic device in Example 11 has superior optoelectronic performance and device lifespan. This demonstrates that using the composition of this application to prepare the hole functional layer can improve hole mobility, thereby enhancing the device efficiency and lifetime of optoelectronic devices. The reason may be that: firstly, the composition includes a metal-organic compound, which includes a first electron-donating group. This first electron-donating group causes the electron cloud to deviate from the functional group, enhancing the conjugation effect of the intrinsic material, weakening energy level oscillations, and reducing electron-phonon coupling, thus reducing non-adiabatic coupling and effectively suppressing nonradiative recombination. The first electron-donating group also allows for continuous electron donation, increasing molecular polarity, enhancing intermolecular interactions, and promoting intermolecular charge transfer, thereby improving hole mobility. Secondly, the hole functional layer includes a first electron-donating group (and a second electron-donating group), which can raise the valence band energy level of the p-type oxide. Furthermore, the content of the second electron-donating group in the hole functional layer increases along the direction from cathode to anode, thus forming an energy level gradient between the anode and the hole functional layer, effectively improving the hole injection and / or hole transport capabilities of the optoelectronic device. The CuO in Comparative Example 3, prepared using conventional methods, is used for the optoelectronic device. x Nanoparticles, used as materials for the hole functional layer, were used in Comparative Example 4 for the optoelectronic device prepared using conventional methods with MnO. x Nanoparticles, used as materials for the hole functional layer, were used in Comparative Example 5 for the optoelectronic device prepared using conventional methods with CrO2. x Nanoparticles, as materials for the hole functional layer, cannot form an energy level gradient between the anode and the hole functional layer, and the film quality is poor, resulting in poor overall performance of optoelectronic devices.

[0241] Furthermore, compared to the optoelectronic device in Comparative Example 6, the optoelectronic device in Example 12 exhibits superior optoelectronic performance and device lifetime, and compared to the optoelectronic device in Comparative Example 7, the optoelectronic device in Example 13 exhibits superior optoelectronic performance and device lifetime. This demonstrates that the compositions of the embodiments of this application are suitable for preparing hole functional layers of red optoelectronic devices, green optoelectronic devices, and blue optoelectronic devices, which is beneficial for further improving the device efficiency and device lifetime of optoelectronic devices.

[0242] The foregoing has provided a detailed description of a composition, thin film, preparation method thereof, and optoelectronic device provided in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the technical solutions and core ideas of this application; those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A composition, characterized in that, The composition comprises an organometallic compound, a combustion agent, an additive, and a solvent, wherein the organometallic compound includes a first electron-donating group, the organometallic compound includes a first metal element, the oxide of the first metal element in at least one valence state is a p-type metal oxide, the combustion agent is an oxygen-containing reducing agent, and the additive includes ketone compounds.

2. The composition according to claim 1, characterized in that, Includes at least one of the following features (a) to (f): (a) The first metallic element includes one or more of chromium, copper and manganese, and the organometallic compound includes one or more of organochromium, organocopper and organomanganese; (b) The propellant includes one or more of hydrogen peroxide, urea, glycine, citric acid, and tris(hydroxymethyl)aminomethane; (c) The additives include one or more of acetylacetone, 1,3-diacetoxyacetone, 2,3-butanedione, 2,3-pentanedione, 2,3-hexanedione, 2,3-heptanedione and 2,3-octanedione; (d) The solvent includes one or more of methanol, ethanol, n-propanol, isopropanol, n-butanol, tert-butanol, pentanol, glycerol, methoxyethanol, N,N-dimethylformamide, and dimethyl sulfoxide; (e) the first electron-donating group comprises -NH2, -N(R1)(R2), -NHR3, -OH, -O-R4, -NHCOR5, -OCOR6, -O - , one or more of alkyl and phenyl; wherein R1, R2, R3, R4, R5, and R6are each independently selected from alkyl having a carbon number of 1 to 30; (f) The composition further includes an organometallic compound, wherein the mass ratio of the organometallic compound to the organometallic compound is 1:(0.03 to 0.05).

3. The composition according to claim 2, characterized in that, R1, R2, R3, R4 and R5 are each independently selected from alkyl groups having 1 to 10 carbon atoms; optionally, R1, R2, R3, R4 and R5 are each independently selected from methyl, ethyl, propyl, butyl, pentyl or hexyl. And / or, the chromium organic compound includes one or more of bis(benzene)chromium, bis(ethylbenzene)chromium, di(ethylcyclopentadienyl)chromium, di(tetramethylcyclopentadienyl)chromium, di(pentamethylcyclopentadienyl)chromium, and di(isopropylcyclopentadienyl)chromium; And / or, the copper organometallic compound includes one or more of (2,4,6-trimethylphenyl)copper (I), bis(dimethylamino-2-propoxy)copper (II), copper dimethyldithiocarbamate (II), and copper dibutyldithiocarbamate (II); And / or, the manganese organic compound includes one or more of di(ethylcyclopentadienyl)manganese, bis(N,N”-diisopropylpentamido)manganese(II), tetra-p-tolylporphyrin manganese, bis(pentamethylcyclopentadienyl)manganese, and di(isopropylcyclopentadienyl)manganese; And / or, the boron organic compound includes one or more of tetra(dimethylamino)diborane, triethylborane, and triethylamineborane.

4. The composition according to any one of claims 1 to 3, characterized in that, Includes at least one of the following features (g) to (i): (g) In the composition, the concentration of the organometallic compound is 10 mg / mL to 40 mg / mL; (h) In the composition, the mass ratio of the organometallic compound to the combustion agent is 1:(0.05 to 0.1); (i) In the composition, the mass ratio of the organometallic compound to the additive is 1:(0.02 to 0.08).

5. A method for preparing a thin film, characterized in that, The method includes the steps of: depositing the composition as described in any one of claims 1 to 4, and then heat-treating the deposited composition to obtain the thin film.

6. The method for preparing the thin film according to claim 5, characterized in that, The heat treatment temperature is 120℃~250℃; And / or, the heat treatment time is 20 min to 40 min.

7. A thin film, characterized in that, The thin film comprises a p-type metal oxide, and at least a portion of the surface of the p-type metal oxide is adsorbed and / or bonded with a second electron-donating group.

8. The thin film according to claim 7, characterized in that, Includes at least one of the following features (j) to (p): (j) The thin film is prepared by the method for preparing the thin film as described in claim 5 or 6; (k) The P-type metal oxide includes one or more of chromium oxide, manganese oxide, and copper oxide; (l) the second electron-donating group comprises one or more of -NH2, -N(R7)(R8), -NHR9, -OH, -O-R 10 , -NHCOR 11 , -OCOR 12 , -O - , alkyl, and phenyl; wherein R7, R8, R9, R 10 , R 11 , and R 12 are each independently selected from alkyl having a carbon atom number of 1 to 30; (m) The P-type metal oxide is in the form of nanoparticles, and the average particle size of the P-type metal oxide is 2nm to 30nm; (n) The thin film includes a first surface and a second surface disposed opposite to each other, and the content of the second electron-donating group in the thin film tends to increase along the direction from the first surface to the second surface; (o) The thickness of the thin film is 10 nm to 80 nm; (p) The P-type metal oxide is doped with boron, and the boron content in the thin film is 1 wt% to 3 wt%.

9. An optoelectronic device, characterized in that, include: The anode and cathode are positioned opposite each other; as well as Multiple functional layers are disposed between the anode and the cathode; Wherein, at least one of the plurality of functional layers is prepared by a film-forming process from the composition as described in any one of claims 1 to 4, or at least one of the plurality of functional layers is prepared by the thin film preparation method as described in claim 5 or 6, or at least one of the plurality of functional layers is the thin film as described in claim 7 or 8.

10. The optoelectronic device according to claim 9, characterized in that, Includes at least one of the following technical features (q) to (s): (q) The materials of the anode and the cathode independently include one or more of a second metal, a carbon material, and a metal oxide material; the second metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg, and / or the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fibers, and / or the metal oxide material includes one or more of indium tin oxide, fluorine-doped tin oxide, antimony tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, TiO2, SnO2, ZnO, and In2O3; (r) The plurality of functional layers include a hole functional layer, which is prepared by a film-forming process from the composition of any one of claims 1 to 4, or the hole functional layer is prepared by the thin film preparation method of claim 5 or 6, or the hole functional layer is the thin film of claim 7 or 8. Optionally, when the optoelectronic device has an upright structure and the hole functional layer is a thin film as described in claim 8, the side of the hole functional layer near the anode is the second surface, and the side of the hole functional layer near the cathode is the first surface; when the anode material includes the metal oxide material, at least a portion of the second electron-donating groups are bonded to the side of the anode near the hole functional layer through chemical bonds and / or adsorption. (s) The plurality of functional layers include a light-emitting layer, the material of which includes one or more of organic light-emitting materials and quantum dots; the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, and TBRb fluorescent materials. The quantum dots are selected from one or more of the following: DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited-state materials, excitocomplex luminescent materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives; the quantum dots are selected from one or more of single-component quantum dots, core-shell structured quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, wherein the core-shell structured quantum dots include one or more shells;The materials of the single-component quantum dots, the core of the core-shell quantum dots, and the shell of the core-shell quantum dots are each independently selected from at least one of group II-VI compounds, group III-VI compounds, group III-V compounds, group IV-VI compounds, or group I-III-VI compounds, wherein the group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, C dZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, and AlNS b. One or more of AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, wherein the III-VI compound is selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3, and the IV-VI compound is selected from SnS and SnSe. The inorganic perovskite quantum dots are selected from one or more of the following: SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The group I-III-VI compounds are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2. The general structural formula of the inorganic perovskite quantum dots is AMX3, where A is Cs. + M is a divalent metal cation, and M includes Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ and Eu 2+ One or more of them, X including Cl - ,Br - and I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is an organic amine cation, and the organic amine cation includes CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ n≥2; the general structural formula of the organic perovskite quantum dots is CMX3, where C is a formamidinyl group; (t) The plurality of functional layers includes an electronic functional layer, the material of which includes one or more of a first material and a second material. The first material includes one or more of a first inorganic material, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, and a group IB-IIIA-VIA semiconductor material. The first inorganic material includes one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2. The group IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS. The group IIIA-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS. - VA group semiconductor materials include one or more of InP and GaP, the IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS, the second inorganic material includes at least one doped second inorganic compound, the host compound of the doped second inorganic compound includes one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2, and the doping element of the doped second inorganic compound includes one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn.

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