A memristive crossbar array based on topological phase change material and a preparation method thereof

CN122248966APending Publication Date: 2026-06-19HUAZHONG UNIV OF SCI & TECH

Patent Information

Authority / Receiving Office: CN · China
Patent Type: Applications(China)
Current Assignee / Owner: HUAZHONG UNIV OF SCI & TECH
Filing Date: 2026-05-18
Publication Date: 2026-06-19

AI Technical Summary

Technical Problem

Existing technologies struggle to simultaneously achieve the patterning accuracy, step coverage quality, and production efficiency of topological phase change memristor arrays. Furthermore, they suffer from photoresist compatibility issues and bottom electrode step leakage problems, which affect device consistency and performance.

Method used

A gradient frequency deposition process combined with bottom electrode annealing repair is adopted. Low-frequency initial deposition ensures step coverage, high-frequency bulk phase growth improves efficiency, and in-situ heat preservation treatment is carried out at high temperature to avoid photoresist contamination and leakage.

Benefits of technology

High-quality coverage of topological phase change material thin films on the edge of the bottom electrode step was achieved, reducing leakage current channels, improving device consistency and production efficiency, and making it suitable for high-precision neuromorphic computing.

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Abstract

This invention relates to the field of semiconductor information storage and neuromorphic computing devices, specifically to a memristor cross-array based on topological phase change material and its fabrication method. The fabrication method includes: forming a bottom electrode array on a substrate; performing in-situ heat treatment on the substrate with the bottom electrode array; depositing topological phase change material on the bottom electrode array and the exposed substrate in a frequency gradient increment to form a storage dielectric layer; and forming a top electrode array perpendicular to the bottom electrode array on the storage dielectric layer. This invention repairs edge lattice damage of the patterned bottom electrode through in-situ heat treatment of the bottom electrode, and, combined with a frequency gradient increment and in-situ heat preservation deposition process, effectively improves the coverage quality and crystallinity of the topological phase change material at the bottom electrode steps, eliminating edge leakage channels.

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