Chip package, power module and manufacturing method
By optimizing the chip packaging structure and utilizing the electrical connection between the redistribution layer and the ceramic substrate, the process flow is simplified, solving the problems of long current paths and large parasitic inductance in traditional packaging, and achieving high integration and high reliability of high-frequency, miniaturized, high-power modules.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- NIO TECH ANHUI CO LTD
- Filing Date
- 2026-04-07
- Publication Date
- 2026-06-19
AI Technical Summary
Traditional power module packaging suffers from problems such as long current paths, large parasitic inductance, complex module structure, and low integration, making it difficult to meet the development needs of high frequency, miniaturization, and high power.
The chip packaging structure includes a chip, a ceramic substrate, and a redistribution layer. The back side of the chip is electrically connected to the metal layer on the front side of the ceramic substrate. The first redistribution layer is electrically connected to the ceramic substrate and the gate and source of the chip. The second redistribution layer overlaps with the first redistribution layer and is partially electrically connected to form a pad for connection to external circuits. By combining the encapsulation layer and the opposite redistribution layer, the process flow is simplified, parasitic inductance is reduced, and integration and reliability are improved.
It effectively reduces the parasitic inductance of the power module, reduces switching losses, improves power density and reliability, and meets the high power density and high integration requirements of the new generation of modules.