Via glass through hole with multi-layer organic / inorganic liner for integrated circuit device package

By lining the through-glass vias in the glass substrate with a multilayer material stack, the stress problem between the glass substrate and the conductive features is alleviated, thereby improving the mechanical stability and yield of IC device packaging.

CN122249077APending Publication Date: 2026-06-19INTEL CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INTEL CORP
Filing Date
2025-11-17
Publication Date
2026-06-19

AI Technical Summary

Technical Problem

During IC packaging, high stress between the glass substrate and conductive features can lead to mechanical failures and reduce packaging yield. Existing technologies are unable to effectively alleviate packaging warpage problems.

Method used

Through-glass vias (TGVs) with multi-layered material stacking linings, including inorganic and organic material layers, are formed on the glass surface using processes such as chemical vapor deposition and atomic layer deposition to buffer internal stress and reduce warping.

Benefits of technology

It effectively alleviates the stress problem between the glass substrate and the conductive features, and improves the mechanical stability and yield of IC device packaging.

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Abstract

Integrated circuit (IC) die packages include glass having conductive features embedded within the glass, such as through-glass vias (TGVs). The embedded features include a metallization separated from the glass by an intermediate multilayer pad comprising both organic and inorganic material layers. In an exemplary embodiment, the organic material has a low elastic (Young's) modulus to accommodate internal stresses between the glass and the metallization. The inorganic material layer of the pad may be a nitride, such as a metal nitride or silicon nitride, and is in direct contact with the glass. The multilayer pad stack may also include another inorganic material layer that contacts the metallization and encapsulates the organic material layer.
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