Method for producing copper-iron ore type oxide thin film and oxide thin film
By using palladium or platinum and cobalt, chromium or rhodium targets, the sputtering process is optimized to form copper-iron oxide thin films, which solves the shortcomings of existing copper-iron oxide thin film manufacturing technology and achieves thin films with high conductivity and high temperature stability, suitable for Schottky electrodes of power devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TANAKA KIKINZOKU KOGYO KK
- Filing Date
- 2024-12-23
- Publication Date
- 2026-06-19
AI Technical Summary
In the prior art, the manufacturing methods of copper-iron oxide thin films have not been fully studied, and traditional Schottky electrodes are insufficient in terms of high output power and reliability, making it difficult to meet the needs of power devices.
A copper-iron oxide thin film is formed by physical vapor deposition using a target containing palladium or platinum as the first metal and cobalt, chromium or rhodium as the second metal. The composition ratio of the target and the sintering process are controlled, and the sputtering conditions are optimized to improve the conductivity and crystallinity of the film.
A copper-iron oxide thin film with high conductivity and good crystallinity was achieved, which is suitable as a Schottky electrode for power devices, improving the high-temperature stability and reliability of the device.
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