A method of crystal processing

Abstract

This specification provides a crystal processing method, which includes: obtaining an initial crystal; determining a processing scheme for the initial crystal; and processing the initial crystal based on the processing scheme.

Description

A crystal processing method Cross-references

[0001] This application claims priority to Chinese application No. 202311526788.5 filed on November 15, 2023, Chinese application No. 202411173676.0 filed on August 26, 2024, Chinese application No. 202411448038.5 filed on October 16, 2024, and Chinese application No. 202422507317.6 filed on October 16, 2024, and the entire contents of the foregoing applications are incorporated herein by reference. Technical Field

[0002] This specification relates to the field of crystal processing, and in particular to a crystal processing method and a crystal detection device. Background Art

[0003] Scintillating crystals are crystalline materials that scintillate in visible or ultraviolet light when exposed to radiation or atomic nuclear particles. They are widely used in nuclear medicine, such as X-ray computed tomography (XCT) and positron emission tomography (PET), nuclear detection technologies such as industrial computed tomography (industrial CT), oil well exploration, nuclear physics, high-energy physics, environmental monitoring, safety testing, and weapon fire control and guidance. Initial crystals can be obtained through natural or artificial growth, but these crystals vary in size and may contain defects, making them unsuitable for direct application in specific devices.

[0004] Therefore, it is necessary to propose a crystal processing method that can further process the initial crystal more accurately and efficiently to ensure that the processed crystal meets the requirements of different applications. Summary of the Invention

[0005] One or more embodiments of this specification provide a crystal processing method, including: obtaining an initial crystal; determining a processing scheme for the initial crystal, and processing the initial crystal based on the processing scheme.

[0006] One or more embodiments of the present specification provide a crystal detection device, comprising: a first moving component, comprising a moving part and a first picking part, the first picking part being arranged on the moving part, the first picking part picking up an initial crystal, and the moving part adjusting the position and / or angle of the first picking part; a first detection component, comprising a first image acquisition component and a size measuring platform, the size measuring platform carrying the initial crystal, the first image acquisition component photographing the initial crystal on the size measuring platform to obtain at least one first image of the initial crystal, the at least one first image being used to determine the size data of the initial crystal; a second detection component, comprising at least one second image acquisition component and at least one defect measurement platform, the at least one defect measurement platform carrying the initial crystal, the at least one second image acquisition component photographing the initial crystal on the defect measurement platform to obtain at least one second image of the initial crystal, the at least one second image being used to determine the defect data of the initial crystal.

[0007] One or more embodiments of the present specification provide a crystal light output control system, including a controller and a processing device, wherein the controller is configured to: obtain an initial light output value of the initial crystal; determine a target light output value of the initial crystal; the processing device is configured to: determine a light adjustment scheme for the initial crystal based on the initial light output value and the target light output value; and perform processing on at least one outer surface of the initial crystal to change the surface roughness based on the light adjustment scheme, so that the actual light output value of the initial crystal changes from the initial light output value to the target light output value, and the surface roughness Ra of the at least one outer surface after the surface roughness processing is changed is in the range of 0.001μm to 10μm.

[0008] One or more embodiments of the present specification provide a crystal assembly method, the method comprising: arranging a plurality of target crystals in an array to form a crystal array; wherein a method for processing the plurality of target crystals comprises: obtaining a plurality of initial crystals; determining an initial light output value of each of the plurality of initial crystals; determining a target light output value corresponding to each of the initial crystals based on the initial light output value of each of the initial crystals; determining a light adjustment scheme for the initial crystal based on the initial light output value and the target light output value; and performing surface roughness-changing processing on at least one outer surface of one or more of the plurality of initial crystals based on the light adjustment scheme, so that the actual light output value of each of the initial crystals reaches the corresponding target light output value, thereby forming the plurality of target crystals.

[0009] One or more embodiments of this specification provide a crystal array, which is assembled using the crystal assembly method described in the aforementioned embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] This specification will be further described in the form of exemplary embodiments, which will be described in detail with reference to the accompanying drawings. These embodiments are not limiting, and in these embodiments, like numbers represent like structures, wherein:

[0011] FIG1 is an exemplary flow chart of a crystal processing method according to some embodiments of the present specification;

[0012] FIG2 is an exemplary flow chart of a crystal assembly method according to some embodiments of this specification;

[0013] FIG3 is a schematic diagram of a crystal assembly according to some embodiments of the present specification;

[0014] FIG4 is another schematic diagram of a crystal assembly according to some embodiments of this specification;

[0015] FIG5 is a schematic diagram of determining a crystal arrangement position according to some embodiments of this specification;

[0016] FIG6 is an exemplary flow chart of a method for controlling light output of a crystal according to some embodiments of this specification;

[0017] FIG7 is a schematic diagram of an initial crystal according to some embodiments of the present specification;

[0018] FIG8 is an exemplary flow chart of another crystal assembly method according to some embodiments of this specification;

[0019] FIG9 is a diagram illustrating a processing method for obtaining a plurality of target crystals for assembling a crystal array according to some embodiments of this specification;

[0020] FIG10 is another schematic diagram of a crystal assembly according to some embodiments of this specification;

[0021] FIG11 is an exemplary flow chart of another crystal processing method according to some embodiments of this specification;

[0022] FIG12 is an exemplary flow chart of determining a cutting plan for an initial crystal according to some embodiments of the present specification;

[0023] FIG13 is an exemplary flow chart of another method for determining a cutting plan for an initial crystal according to some embodiments of this specification;

[0024] FIG14 is an exemplary flow chart of determining a first adjustment scheme for an initial crystal according to some embodiments of this specification;

[0025] FIG15 is an exemplary flow chart of a second adjustment scheme for determining an initial crystal according to some embodiments of this specification;

[0026] FIG16 is an exemplary flowchart of determining an image to be recognized according to some embodiments of this specification;

[0027] FIG17 is an exemplary block diagram of a crystal detection device according to some embodiments of the present specification;

[0028] FIG18 is a schematic diagram of a moving assembly according to some embodiments of the present specification;

[0029] FIG19 is a schematic diagram of a first detection component according to some embodiments of this specification;

[0030] FIG20 is a schematic diagram of another first detection component according to some embodiments of this specification;

[0031] FIG21 is a schematic diagram of a second detection component according to some embodiments of this specification;

[0032] FIG22A is a schematic diagram of a first defect measurement station according to some embodiments of the present specification;

[0033] FIG22B is another schematic diagram of a first defect measurement station according to some embodiments of the present specification;

[0034] FIG23 is a schematic diagram of a portion of a second detection component according to some embodiments of the present specification. DETAILED DESCRIPTION

[0035] To more clearly illustrate the technical solutions of the embodiments of this specification, the following briefly describes the drawings required for describing the embodiments. Obviously, the drawings described below are merely examples or embodiments of this specification. Those skilled in the art can apply this specification to other similar scenarios based on these drawings without inventive effort. Unless otherwise apparent from the context or otherwise noted, the same reference numerals in the figures represent the same structure or operation.

[0036] It should be understood that the terms "system," "device," "unit," and / or "module" used herein are a method for distinguishing different components, elements, parts, portions, or assemblies at different levels. However, if other terms can achieve the same purpose, the terms may be replaced by other expressions.

[0037] As used in this specification and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" do not refer to the singular but also include the plural. Generally speaking, the terms "comprises" and "include" only indicate the inclusion of the steps and elements specifically identified, and these steps and elements do not constitute an exclusive list. A method or apparatus may also include other steps or elements.

[0038] Flowcharts are used throughout this specification to illustrate the operations performed by systems according to embodiments of this specification. It should be understood that preceding or following operations do not necessarily need to be performed in exact order. Instead, the steps may be processed in reverse order or simultaneously. Furthermore, other operations may be added to these processes, or one or more operations may be removed from these processes.

[0039] FIG1 is an exemplary flow chart of a crystal processing method according to some embodiments of the present disclosure. As shown in FIG1 , the process 100 includes the following steps.

[0040] Step 110: Obtain an initial crystal.

[0041] The initial crystal refers to the crystal to be processed, and the types of the initial crystal may include but are not limited to silicon carbide, germanium single crystal, etc.

[0042] The aforementioned processing may include, but is not limited to, one or more of assembling the initial crystal, regulating the light output of the initial crystal, cutting the initial crystal, replacing the initial crystal, and adjusting the initial crystal. For example, the initial crystal may be a natural or artificially grown crystal that has not yet been processed or formed. This can be used to determine the size and defect data of the initial crystal, thereby determining a cutting plan for cutting the initial crystal. For more information on the processing of the initial crystal, please refer to the relevant description below in this specification.

[0043] Initial crystals can be obtained in a variety of ways. For example, initial crystals can be obtained by presetting. For another example, initial crystals can also be obtained by selecting from multiple crystal raw materials.

[0044] Step 120 : determining a processing plan for the initial crystal, and processing the initial crystal based on the processing plan.

[0045] The treatment plan may refer to a plan for treating the initial crystal. The specific type of the treatment plan may be determined based on the type of treatment required for the initial crystal.

[0046] For example, when the initial crystals need to be assembled, the processing plan may include an assembly plan for assembling the initial crystals into a crystal array. For another example, when the light output of the initial crystals needs to be adjusted, the processing plan may include a light output adjustment plan. For another example, the initial crystals may be crystal units on a tray, and the processing plan may include a first adjustment plan for adjusting the initial crystals on the tray. For another example, the initial crystals may be a crystal array composed of multiple crystal units, and the processing plan may include a second adjustment plan for adjusting the crystal array.

[0047] In some embodiments, the processing plan for the initial crystal can be determined in a variety of ways.

[0048] In some embodiments, an assembly scheme for assembling the initial crystals into a crystal array may be determined. For more details about the aforementioned embodiments, please refer to the relevant description later in this specification.

[0049] In some embodiments, relevant information about the initial crystal can be determined; based on the relevant information about the initial crystal, a processing scheme is determined. For example, the relevant information about the initial crystal includes determining an initial light output value and a target light output value of the initial crystal. Based on the initial light output value and the target light output value, at least one outer surface of the initial crystal can be processed to change the surface roughness so that the actual light output value of the initial crystal changes from the initial light output value to the target light output value, and the surface roughness Ra of the at least one outer surface after the surface roughness processing is changed is in the range of 0.001μm to 10μm. For another example, the relevant information about the initial crystal includes the recognition results of one or more initial crystals, the recognition results include at least one of the size data, position data, and defect data of one or more initial crystals, obtaining images to be recognized related to the one or more initial crystals; performing image recognition on the images to be recognized to determine the recognition results of one or more initial crystals; and determining a processing scheme for one or more initial crystals based on the recognition results. The relevant information about the initial crystal can be obtained by an operator detecting the initial crystal, or by detecting the initial crystal using relevant equipment (e.g., a crystal detection device). For more information about the aforementioned multiple examples, please refer to the relevant description below in this specification.

[0050] In some embodiments, the initial crystals can be processed based on a processing scheme. For example, when the processing scheme includes an assembly scheme for assembling the initial crystals into a crystal array, correspondingly, after determining the aforementioned assembly scheme, the multiple initial crystals can be pre-processed based on the assembly scheme to obtain multiple target crystals; the multiple target crystals are assembled into a crystal array, wherein a reflective structure exists between at least two adjacent target crystals in the crystal array. In some embodiments, when the processing scheme includes a cutting scheme for cutting the initial crystals, correspondingly, after determining the aforementioned assembly scheme, the initial crystals can be cut based on the cutting scheme. In some embodiments, when the processing scheme includes a light output adjustment scheme, at least one outer surface of the initial crystal can be processed to change the surface roughness based on the light adjustment scheme, so that the actual light output value of the initial crystal changes from the initial light output value to the target light output value, and the surface roughness Ra of the at least one outer surface after the surface roughness change is within the range of 0.001μm to 10μm. In some embodiments, when the processing scheme includes a first adjustment scheme for adjusting the initial crystals on the tray, the initial crystals on the tray can be adjusted based on the first adjustment scheme. In some embodiments, when the processing scheme includes a second adjustment scheme for adjusting the crystal unit and / or the reflective structure in the initial crystal, the crystal unit and / or the reflective structure in the initial crystal can be adjusted based on the second adjustment scheme. For more information about the aforementioned embodiments, please refer to the relevant description below in this specification.

[0051] Some embodiments of this specification determine a processing scheme for the initial crystal, and based on the processing scheme, the initial crystal can be processed more accurately and efficiently to ensure that the processed initial crystal meets the requirements of different applications.

[0052] The following description of the present invention will describe the relevant contents of assembling the initial crystal. Correspondingly, the crystal processing method may include a crystal assembly method.

[0053] FIG. 2 is an exemplary flow chart of a crystal assembly method according to some embodiments of the present specification.

[0054] In some embodiments, one or more steps in process 200 may be performed by an operator, or by crystal production and processing equipment (e.g., a grinder, a polisher, etc.), crystal performance inspection equipment, etc. As shown in FIG2 , process 200 includes the following steps.

[0055] Step 210: Acquire multiple initial crystals.

[0056] The initial crystal may include material formed by cutting the crystal raw material used to assemble the crystal array. The crystal raw material may refer to a crystal rod grown in a crystal growth device or other shaped crystal raw material. The initial crystal may have a variety of shapes. For example, the initial crystal may be a crystal bar, a crystal block, a crystal rod, or other crystal shapes.

[0057] The initial crystals may include, but are not limited to, a combination of one or more crystals selected from various types including cerium bromide crystals, cerium-doped lanthanum bromide crystals, cerium-doped lanthanum chloride crystals, silicate scintillation crystals, and garnet scintillation crystals.

[0058] In some embodiments, the crystal material can be selected. For example, the crystal material can be selected based on indicators such as light output performance, decay time, and energy resolution.

[0059] In some embodiments, the indicator condition corresponding to light output performance can be: greater than 23,000 ph / MeV. The indicator condition corresponding to decay time can be: less than 42 ns. The indicator condition corresponding to energy resolution can be: 5%-22%. Accordingly, crystal rods or other shaped crystals with light output performance greater than 23,000 ph / MeV, decay time less than 42 ns, and energy resolution of 5%-22% can be selected as crystal raw materials. In some embodiments, the light output performance of the crystal can be tested according to the measurement methods in relevant industry standards. For example, in conjunction with the "GAGG Crystal and Wafer Array Performance Measurement Method", the full absorption peak method and the Compton edge method can be used for measurement. The measurement principle is: when monoenergetic gamma radiation is incident on a scintillation detector, the distribution of its output pulse amplitude is mainly composed of spectral segments such as the Compton distribution and the full absorption peak (except for low atomic number scintillators). The full absorption peak method and the Compton edge method use the full absorption peak or Compton distribution edge amplitude as the metric for determining the scintillator light output, respectively. For another example, in conjunction with the "Method for Measuring the Characteristic Parameters of Lutetium Silicate and Lutetium Yttrium Silicate Scintillator Single Crystals," the intrinsic amplitude resolution (i.e., energy resolution) of the scintillator being measured can be determined by measuring the pulse amplitude resolution of the scintillation detector and deducting the contribution of the intrinsic resolution of the photomultiplier tube. For another example, in conjunction with the "Method for Measuring the Characteristic Parameters of Lutetium Silicate and Lutetium Yttrium Silicate Scintillator Single Crystals," the decay time can be measured using the direct oscilloscope method. The measurement principle is: after the scintillator is coupled to the photomultiplier tube, the incident photon flux of the photomultiplier tube photocathode is linearly related to the scintillator's photon emission rate. In the linear operating state, the photomultiplier tube's output current is also linearly related to the incident photon flux. By measuring the time distribution of the photomultiplier tube's output current after a single excitation of the scintillator, the photon distribution curve of the scintillator can be obtained, and the decay time τ can be calculated from this curve.

[0060] In some embodiments, the cutting process performed on the crystal material may be a process operation to change the shape, size, etc. of the crystal material. In some embodiments, the cutting process may include one or more of inner circle cutting, multi-wire cutting, and single-wire cutting.

[0061] In some embodiments, the crystal raw material can be cut into crystal bars as initial crystals through a cutting process, and the crystal bar size can be (0.53-6.3)*(0.53-6.3)*(0.5-60) mm. In some embodiments, the cross-sectional shape of the crystal bar perpendicular to the length direction can be rectangular. In some embodiments, the crystal bar size can be at least one of 0.53*0.53*5.3 mm, 0.53*0.53*10 mm, 0.53*0.53*30 mm, 0.53*0.53*60 mm, 2*2*10 mm, 2*2*30 mm, 2*2*60 mm, 4*4*10 mm, 4*4*20 mm, 4*4*30 mm, 4*4*60 mm, etc., which can be set according to specific needs and is not limited here.

[0062] In some embodiments, the crystal raw material can be cut into crystal cylinders as initial crystals through a cutting process, and the size of the crystal cylinders can be In some embodiments, the cross-sectional shape of the crystal cylinder perpendicular to the length direction can be circular. In some embodiments, the size of the crystal cylinder can be At least one of the above, etc., which can be set according to specific needs and is not limited here.

[0063] In some embodiments, the crystal raw material can be cut into crystal blocks as initial crystals through a cutting process, and the size of the crystal blocks can be (1-125) mm*(1-125) mm*(1-280) mm. In some embodiments, the cross-sectional shape of the crystal blocks perpendicular to the length direction can be rectangular. In some embodiments, the size of the crystal blocks can be 1*1*1 mm, 1*1*10 mm, 1*1*50 mm, 5*5*5 mm, 5*5*10 mm, 5*5*50 mm, 5*5*100 mm, 5*5*200 mm, 5*5*280 mm, 10*10*10 mm, 20*20*20 mm, 30*30*30 mm, 20*20*50 mm, 20*20*100 mm, 20*20*200 mm, 20*20*280 mm, 60* At least one of 60*60mm, 60*60*100mm, 60*60*200mm, 60*60*280mm, 100*100*60mm, 100*100*100mm, 100*100*200mm, 100*100*280mm, 125*125*60mm, 125*125*100mm, 125*125*200mm, 125*125*280mm, etc., which can be set according to specific needs and is not limited here.

[0064] It should be noted that the cross-sectional shape of the initial crystal obtained by the above-mentioned cutting process is only illustrative and may also be other shapes. For example, the cross-sectional shape may be triangular, hexagonal, elliptical, etc. The longitudinal direction may be the axial direction of the initial crystal or the direction with the largest dimension among the three orthogonal directions.

[0065] In some embodiments, the first angle between the cutting surface of the initial crystal and the first preset surface deviates from the first preset angle by no more than 0.5°. Wherein, the first angle refers to the actual angle between the cutting surface and the first preset surface. The first preset angle refers to the angle value expected to be achieved between the cutting surface and the first preset surface. In some embodiments, the first preset surface can be a side surface adjacent to the cutting surface (also referred to as a side surface). Accordingly, the first preset angle between the cutting surface and the first preset surface can be between 89.5° and 90.5°, for example, it can be at least one of 89.5°, 89.6°, 89.7°, 89.8°, 89.9°, 90°, 90.1°, 90.2°, 90.3°, 90.4°, 90.5°, etc., which can be set according to specific needs and is not limited here. In some embodiments, the first preset surface can be a surface opposite to the cutting surface. Correspondingly, the first preset angle between the cutting surface and the first preset surface can be between 0 and 3°, for example, it can be at least one of 0°, 1°, 2°, 3°, etc. It can be set according to specific needs and is not limited here.

[0066] In some embodiments, the first angle between the cutting surface and the first predetermined surface deviates from the first predetermined angle by no more than 0.4°. In some embodiments, the first angle between the cutting surface and the predetermined surface deviates from the first predetermined angle by no more than 0.3°. In some embodiments, the first angle between the cutting surface and the predetermined surface deviates from the first predetermined angle by no more than 0.2°.

[0067] Step 220 , determining an assembly plan for assembling a plurality of initial crystals into a crystal array.

[0068] An assembly plan refers to a method for assembling multiple initial crystals into a crystal array. The assembly plan may include, but is not limited to, one or more of the following: the number of target crystals in the crystal array, the size of the target crystals, the surface roughness of the target crystals, the arrangement of the target crystals, etc. The target crystals are crystal units that, after processing, can be used to assemble a crystal array.

[0069] The assembly plan can be determined in a variety of ways. In some embodiments, the assembly plan can be preset by an operator. For example, the surface roughness of the target crystal can be preset by the operator. In some embodiments, the assembly plan can also be determined after analyzing and processing the target crystal. For example, the light output performance of multiple target crystals can be tested; based on the light output performance, the arrangement positions of the multiple target crystals can be determined. For more details on the above examples, please refer to the relevant description below in this specification.

[0070] It is worth noting that the aforementioned assembly plan can be determined multiple times. For example, the crystal assembly device may first determine the surface roughness of multiple target crystals in the assembly plan, pre-process multiple initial crystals to obtain multiple target crystals, and then measure the light output performance of the multiple target crystals; based on the light output performance, the arrangement positions of the multiple target crystals in the assembly plan are determined. For more information on pre-processing the initial crystals and determining the arrangement positions of the multiple target crystals, please refer to the relevant description later in this specification.

[0071] Step 230 : Pre-processing the multiple initial crystals based on the assembly plan to obtain multiple target crystals.

[0072] In some embodiments, based on an assembly plan, a plurality of initial crystals may be pre-processed to obtain a plurality of target crystals, where the plurality of target crystals meet requirements of the assembly plan.

[0073] The aforementioned pretreatment includes one or more of grinding treatment and polishing treatment. The plurality of target crystals obtained after the pretreatment meet the surface roughness requirements of the crystal unit in the assembly plan.

[0074] The aforementioned grinding process may be a process in which abrasive particles are coated or pressed onto a grinding tool and the surface of the initial crystal is finished by relative movement of the grinding tool and the initial crystal under a certain pressure.

[0075] In some embodiments, the surface roughness of the initial crystal can be adjusted by lapping. The surface obtained by lapping is called a lapping surface. In some embodiments, one or two end faces of the initial crystal can be lapping to obtain a lapping surface. An end face refers to a plane at both ends of the initial crystal along the length direction. In some embodiments, all faces of the initial crystal can be lapping to obtain a lapping surface. For example, if the initial crystal is a cuboid, six faces of the initial crystal can be lapping.

[0076] In some embodiments, the grinding process may include one or more of single-side grinding, double-side grinding, etc. For example, a 6B-16B grinding machine may be used to perform single-side grinding or double-side grinding on the initial crystal.

[0077] In some embodiments, the surface roughness Ra of the grinding surface may be 0.1 μm-1.5 μm. In some embodiments, the surface roughness Ra of the grinding surface may be 0.1 μm-1 μm. In some embodiments, the surface roughness Ra of the grinding surface may be 0.1 μm-0.5 μm. In some embodiments, the surface roughness Ra of the grinding surface may be 0.5 μm-1.5 μm. In some embodiments, the surface roughness Ra of the grinding surface may be 0.5 μm-1 μm. In some embodiments, the surface roughness Ra of the grinding surface may be at least one of 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.8 μm, 1 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, and 1.5 μm, which can be set according to specific needs and is not limited here.

[0078] In some embodiments, the angular deviation between the second angle between the grinding surface and the second preset surface and the second preset angle is no more than 0.5°. Wherein, the second angle refers to the actual angle between the grinding surface and the second preset surface. The second preset angle refers to the angle value expected to be achieved between the grinding surface and the second preset surface. In some embodiments, the second preset surface can be a side surface adjacent to the grinding surface. Accordingly, the second preset angle between the grinding surface and the second preset surface can be between 89.5° and 90.5°, for example, it can be at least one of 89.5°, 89.6°, 89.7°, 89.8°, 89.9°, 90°, 90.1°, 90.2°, 90.3°, 90.4°, 90.5°, etc., which can be set according to specific needs and is not limited here. In some embodiments, the second preset surface can be the end surface opposite to the grinding surface. Accordingly, the preset angle between the grinding surface and the second preset surface can be between 0 and 3°, for example, it can be at least one of 0°, 1°, 2°, etc., which can be set according to specific needs and is not limited here.

[0079] In some embodiments, the second angle between the grinding surface and the second predetermined surface deviates from the second predetermined angle by no more than 0.4°. In some embodiments, the second angle between the grinding surface and the second predetermined surface deviates from the second predetermined angle by no more than 0.3°. In some embodiments, the second angle between the grinding surface and the second predetermined surface deviates from the second predetermined angle by no more than 0.2°.

[0080] In some embodiments, polishing can be a process in which the surface of the initial crystal is treated mechanically, chemically, or electrochemically to reduce the surface roughness of the initial crystal, thereby obtaining a bright, smooth surface. In some embodiments, polishing can be performed on at least one surface of the initial crystal. For example, polishing can be performed on one or both end surfaces of the initial crystal or the cut body.

[0081] The surface obtained by polishing is called a polished surface. In some embodiments, a polishing process can be performed on the ground surface to obtain a polished surface. In some embodiments, a polishing process can also be performed on the non-ground surface to obtain a polished surface. In some embodiments, a polishing process can be performed on the end surface to obtain a polished surface.

[0082] In some embodiments, the size of the crystal bar after polishing can be (0.5-6)*(0.5-6)*(0.5-59.5)mm. In some embodiments, the size of the crystal cylinder after polishing can be In some embodiments, the size of the crystal column after polishing can be (0.5-150) mm*(0.5-150) mm*(0.5-279) mm.

[0083] In some embodiments, the polished surface has a finish rating of no greater than 60 / 40 (where 60 limits scratch size and 40 limits pit size). In some embodiments, the polished surface has a finish rating of no greater than 40 / 20. In some embodiments, the polished surface has a surface roughness Ra of 0.001 μm to 0.08 μm.

[0084] In some embodiments, the third angle between the polishing surface and the third preset surface deviates from the third preset angle by no more than 0.5°. The third angle refers to the actual angle between the polishing surface and the third preset surface. The third preset angle refers to the desired angle between the polishing surface and the third preset surface. In some embodiments, the third preset surface may be a side surface adjacent to the polishing surface. In some embodiments, the third preset surface may be an end surface opposite the polishing surface. The third preset angle is similar to the first and second preset angles; for further explanation, please refer to the relevant description above.

[0085] In some embodiments, the third angle between the polished surface and the third preset surface deviates from the third preset angle by no more than 0.4°. In some embodiments, the third angle between the polished surface and the third preset surface deviates from the third preset angle by no more than 0.3°. In some embodiments, the third angle between the polished surface and the third preset surface deviates from the third preset angle by no more than 0.2°.

[0086] In some embodiments, the chipping size of the polished surface is less than 1.5*1.5*1.5mm. In some embodiments, the chipping size of the polished surface is less than 1.3*1.3*1.3mm. In some embodiments, the chipping size of the polished surface is less than 1.2*1.2*1.2mm. In some embodiments, the chipping size of the polished surface is less than 1.1*1.1*1.1mm. In some embodiments, the chipping size of the polished surface is less than 1*1*1mm. The chipping of the polished surface may be a notch in the polishing surface, etc. The chipping size may be the largest of the length, width, depth, etc. of the notch.

[0087] Through grinding and / or polishing, a target crystal with a smooth surface, small surface roughness and small angle deviation can be obtained, thereby improving the crystal utilization rate and preparing for subsequent array arrangement to improve the qualification rate and resolution of the crystal array.

[0088] In some embodiments, the pre-processed pieces can be quality inspected, and the pieces that meet the quality inspection standards can be identified as target crystals. For example, the pieces can be crystal bars that have been ground and / or polished.

[0089] In some embodiments, quality inspection includes spot checks or full inspections of performance and appearance. In some embodiments, quality inspection standards for appearance include: a surface roughness Ra of the ground surface between 0.08 μm and 1.5 μm, an angular deviation of no more than 0.5° between the second angle between the ground surface and the second preset surface, a surface roughness Ra of no more than 0.08 μm, an angular deviation of no more than 0.5° between the third angle between the polished surface and the third preset surface, and a chip size of less than 1.5*1.5*1.5 mm on the polished surface. In some embodiments, quality inspection standards for performance include one or more of: a light output performance greater than 23,000 Ph / MeV, a decay time less than 42 ns, and an energy resolution greater than 5%.

[0090] Step 240: assemble multiple target crystals into a crystal array.

[0091] A crystal array is an array composed of multiple target crystals.

[0092] In some embodiments, multiple target crystals can be assembled into a crystal array by optical coupling. For example, multiple target crystals can be assembled into a crystal array by direct coupling, fiber coupling, prism coupling, waveguide coupling, etc.

[0093] In some embodiments, multiple target crystals can be bonded together to form a crystal array. For more information on bonding and assembly, please refer to the relevant description below in this specification.

[0094] In some embodiments, a reflective structure is provided between at least two adjacent target crystals in the crystal array.

[0095] The reflective structure refers to a structure with light reflectivity inside the crystal array. In some embodiments, the reflective structure may be present between every two target crystals.

[0096] In some embodiments, the reflective structure includes a reflective filling material and / or a reflective film. In some embodiments, the reflective structure can enhance the optical performance of the crystal array and prevent crosstalk between target crystals.

[0097] Reflective filler refers to a structure that fills the gaps between target crystals in a crystal array. In some embodiments, the reflective filler can be placed between target crystals to bond them together. In some embodiments, the reflective filler can reduce or prevent crosstalk between any two adjacent target crystals, thereby enhancing the anti-crosstalk effect.

[0098] The reflective film is a light-proof reflective medium layer. In some embodiments, the reflective film has a reflectivity greater than 92% for visible light and a thickness less than 0.3 mm. In some embodiments, the reflective film has a thickness no greater than 0.5 mm.

[0099] In some embodiments, the reflective film can be ESR film, polytetrafluoroethylene tape, aluminum foil, white polyester reflective film, white polypropylene reflective film, silver-coated mirror reflective film, E60 reflective film, etc.

[0100] In some embodiments, at least one layer of reflective film is required to assemble a crystal array. In some embodiments, the reflective film can be placed between rows (or columns) of crystals in the crystal array. In some embodiments, the reflective film can improve the optical performance of the crystal array and prevent light crosstalk between rows (or columns). For more information on crystal rows and the use of reflective films to assemble a crystal array, please refer to the relevant description below.

[0101] In some embodiments, the reflective filling material includes a compound, which is a barium compound, a titanium compound, or a mixture of a barium compound and a titanium compound.

[0102] Titanium compounds and barium compounds can be used as fillers in reflective layers, each with its own advantages and properties in various optical and electronic applications. When selecting a filler, factors such as the required wavelength range, reflective performance, transparency, mechanical strength, and environmental stability of the reflective layer need to be considered. Different filler materials have different advantages and limitations, so the appropriate material can be selected based on the specific application requirements. A typical reflective layer is typically a multilayer structure, consisting of a stack of different materials to achieve specific reflective and transmissive properties. By way of example only, the barium compound can be one or more of barium tartrate (BaSO4), barium titanate (BaTiO3), barium carbonate (BaCO3), or barium chloride (BaCl2). The titanium compound can be one or more of titanium dioxide (TiO2), indium tin oxide (ITO), or titanium nitride (TiN). BaSO4 has high opacity and high reflectivity in the visible and infrared spectral ranges. TiO2 has a high refractive index and high reflectivity, particularly offering excellent performance in the ultraviolet spectral range. BaTiO3 has excellent photorefractive properties, high beam coupling gain, and can operate in visible and near-infrared wavelengths. ITO is a transparent conductive material with excellent corrosion resistance and stability. TiN is hard, heat-resistant, wear-resistant, and corrosion-resistant, and has high transmittance in the visible light range. Using these compounds as optical materials for reflective layer fillers can improve the reflective properties of the reflective layer while maintaining high transparency, effectively ensuring the light output performance of the crystal array.

[0103] In some embodiments, the reflective filler material can be prepared from glue, water, and a compound in a ratio of (1-3): (0-2): (5-7). The glue is a fluid glue. For example, the glue can be polyvinyl alcohol (PVAL). The water can be pure water, ordinary tap water, deionized water, distilled water, etc.

[0104] In some embodiments, the volume of the solid particles in the reflective filler material is less than 0.2 mm 3 The solid particles in the reflective filling material may include titanium compounds and / or barium compounds.

[0105] In some embodiments, the surface roughness Ra of the reflective structure formed by the reflective filling substance is less than 100 μm. In some embodiments, the surface roughness Ra of the reflective structure formed by the reflective filling substance is less than 90 μm. In some embodiments, the surface roughness Ra of the reflective structure formed by the reflective filling substance is less than 80 μm. In some embodiments, the surface roughness Ra of the reflective structure formed by the reflective filling substance is less than 70 μm. In some embodiments, the surface roughness Ra of the reflective structure formed by the reflective filling substance is less than 60 μm. In some embodiments, the surface roughness Ra of the reflective structure formed by the reflective filling substance is less than 50 μm. In some embodiments, the surface roughness Ra of the reflective structure formed by the reflective filling substance is less than 40 μm. In some embodiments, the surface roughness Ra of the reflective structure formed by the reflective filling substance is less than 30 μm. In some embodiments, the surface roughness Ra of the reflective structure formed by the reflective filling substance is less than 20 μm. In some embodiments, the surface roughness Ra of the reflective structure formed by the reflective filling substance is less than 10 μm. In some embodiments, the surface roughness Ra of the reflective structure formed by the reflective filler material is at least one of 100 μm, 95 μm, 90 μm, 85 μm, 80 μm, 75 μm, 70 μm, 60 μm, 50 μm, 40 μm, 30 μm, 20 μm, 10 μm, etc., and can be set according to specific needs and is not limited here. If the surface roughness of the reflective structure is too high, the stability performance during bonding and assembly will be reduced. By controlling the surface roughness of the reflective structure, at least the stability of the bonding and assembly can be ensured.

[0106] In some embodiments, a method for preparing a reflective filling material includes: determining a first mass of glue, a second mass of water, and a third mass of a compound according to a raw material ratio; placing the first mass of glue into a configuration container, placing the second mass of water into the configuration container, and stirring; adding a preset mass of the compound to the configuration container at preset time intervals and stirring at a preset stirring rate, wherein the preset mass is less than or equal to the third mass; after the third mass of the compound is completely placed into the configuration container, continuing stirring for a preset time to obtain the reflective filling material.

[0107] In some embodiments, the first mass, the second mass, and the third mass can be determined in a variety of ways. For example, the first mass can be preset, and then the second mass and the third mass can be calculated based on the raw material ratio. For another example, the second mass can be preset, and then the first mass and the third mass can be calculated based on the raw material ratio.

[0108] In some embodiments, the configuration container can be a cleaned stainless steel container or a plastic container, etc., which can be configured according to actual needs.

[0109] In some embodiments, a first mass of glue can be placed in a container and stirred, and while the glue is being stirred, a second mass of water can be placed in the container and stirred continuously. In some embodiments, the first mass of glue and the second mass of water can be placed in the container simultaneously and then stirred.

[0110] In some embodiments, a predetermined amount of compound may be added to the preparation container at predetermined intervals after stirring for a specific period of time.

[0111] The preset mass refers to at least a portion of the compound of the third mass. The preset mass is less than or equal to the third mass. After stirring for a specific time, the glue and water can be considered to be uniformly mixed. For example, if the third mass is 1 kg, the preset mass can be 10-500 g. For example, the specific time can be 20-40 minutes, and the preset interval can be 10-20 minutes. The specific time, preset interval, and preset mass can be empirical values, manually preset values, or any combination thereof, and can be set according to actual needs, and this specification does not impose any restrictions on this.

[0112] In some embodiments, when the compound is a mixture of a barium compound and a titanium compound, the mixture of the barium compound and the titanium compound can be stirred in advance before adding the compound into the preparation container to ensure uniform mixing.

[0113] In some embodiments, the preset stirring rate can be 1-200 rev / min. In some embodiments, the preset stirring rate can be 1-180 rev / min. In some embodiments, the preset stirring rate can be 1-150 rev / min. In some embodiments, the preset stirring rate can be 1-100 rev / min. In some embodiments, the preset stirring rate can be at least one of 10 rev / min, 20 rev / min, 40 rev / min, 50 rev / min, 60 rev / min, 80 rev / min, 100 rev / min, 120 rev / min, 150 rev / min, 180 rev / min, 200 rev / min, etc., which can be set according to specific needs and is not limited here.

[0114] In some embodiments, after all the third mass compound is placed in the configuration container, stirring is continued for a preset time to obtain a reflective filling material. In some embodiments, the preset time can be 0.5-2 hours. In some embodiments, the preset time can be 0.5-1.5 hours. The preset time can be 0.5-1 hour. The preset time can be 1-2 hours. The preset time can be 1-1.5 hours. In some embodiments, the preset time can be at least one of 0.5 hours, 1 hour, 1.5 hours, 2 hours, etc., which can be set according to specific needs and is not limited here.

[0115] In some embodiments, the prepared reflective filling material can be stored under constant temperature and humidity, wherein the constant temperature and humidity conditions are a temperature not higher than 30° C. and a humidity greater than 60%.

[0116] In some embodiments of this specification, a barium compound, a titanium compound, or a mixture of a barium compound and a titanium compound, along with glue and water in a specific ratio, can be used to produce a reflective filler material that exhibits certain fluidity, low abrasion resistance, high gloss, stable color, low cohesion, no heavy metal contamination, and no toxicity (e.g., rubber gas). When used for bonding and assembly, this reflective filler material effectively prevents light crosstalk between individual crystals in a crystal array during assembly. Furthermore, the reflective filler material has a thin, dry thickness and is less prone to cracking, providing excellent light reflectivity and effectively ensuring high light output performance.

[0117] Bonding assembly refers to the operation of arranging and combining multiple target crystals into a crystal array.

[0118] In some embodiments, multiple target crystals can be partitioned and assembled to obtain multiple crystal combinations. Each crystal combination can be bonded and assembled into a crystal array according to the arrangement position. It should be noted that when all target crystals are partitioned and assembled, they can be based on unified test conditions.

[0119] Partitioning and matching refers to the operation of dividing the crystals that can be assembled into the same crystal array into a single crystal combination.

[0120] In some embodiments, the partitioning process includes grouping multiple target crystals with similar performance into a single crystal group. In some embodiments, similar performance can mean that the difference between the light output performance, decay time, and / or energy resolution of the target crystals is less than a corresponding difference threshold. The difference threshold can be an empirical value, a preset value, or any combination thereof.

[0121] In some embodiments, the light output performance of the target crystal may include the light energy output by the target crystal (also referred to as the light output value). In some embodiments, the light output performance being close may include the light energy difference between the plurality of target crystals being less than a corresponding difference threshold.

[0122] In some embodiments, the light output performance of the target crystal may further include the light yield of the target crystal.

[0123] In some embodiments, the close light output performance may include close light yields of the two target crystals. In some embodiments, the light yield of the target crystals may be measured by the full-energy peak area corresponding to the channel address data of the target crystals. In some embodiments, the light yields of the two target crystals may be considered close when the relative light yield difference between the two target crystals is less than a corresponding difference threshold. In some embodiments, the relative light yield difference may be characterized by the difference in the full-energy peak area corresponding to the channel address values ​​of the two target crystals.

[0124] When high-energy particles such as X-rays (or gamma rays) interact with a crystal, they deposit energy within the crystal, causing the crystal's atoms to enter an excited state and emit fluorescent photons upon de-excitation. These fluorescent photons are converted into photoelectrons by a photoelectric device (e.g., at the PMT photocathode, they undergo a photoelectric effect and are converted into photoelectrons). These photoelectric devices then amplify and process them through digital-to-analog conversion to form a pulse signal. The number of pulses in the pulse signal corresponds to the number of incident particles, while the pulse amplitude is proportional to the number of fluorescent photons generated by the crystal, and thus to the energy deposited by the incident particles in the crystal. Therefore, the difference in the total energy peak area corresponding to the channel address values ​​of two target crystals can be used to characterize the relative light yield difference. The channel address value is obtained by converting the pulse signal into a number corresponding to its amplitude by the analyzer.

[0125] In some embodiments, the relative light yield difference between any two target crystals in the crystal array is no greater than 3600 Ph / Mev. In some embodiments, the relative light yield difference between any two target crystals in the crystal array is no greater than 3400 Ph / Mev. In some embodiments, the relative light yield difference between any two target crystals in the crystal array is no greater than 3200 Ph / Mev. In some embodiments, the relative light yield difference between any two target crystals in the crystal array is no greater than 3000 Ph / Mev. In some embodiments, the relative light yield difference between any two target crystals in the crystal array is no greater than 2800 Ph / Mev. In some embodiments, the relative light yield difference between any two target crystals in the crystal array may be at least one of 3600 Ph / Mev, 3500 Ph / Mev, 3400 Ph / Mev, 3300 Ph / Mev, 3200 Ph / Mev, 3100 Ph / Mev, 3000 Ph / Mev, etc., which can be set according to specific needs and is not limited here.

[0126] In some embodiments, zoning and arranging includes grouping multiple target crystals of similar size into a single crystal group. In some embodiments, similar size may be defined as the target crystals having a size deviation less than a corresponding size deviation threshold (e.g., 0.1 mm). For example, the target crystals may be considered similar in size when the length deviation, width deviation, and height deviation of the target crystals are each less than a corresponding size deviation threshold.

[0127] In some embodiments, the partitioning includes grouping target crystals whose perpendicularity deviation between any two faces is less than a perpendicularity deviation threshold into a crystal group. The perpendicularity deviation threshold can be an empirical value, a manually preset value, or any combination thereof.

[0128] In some embodiments of the present specification, target crystals are partitioned and arranged according to their performance (e.g., light output performance, decay time, energy resolution and / or channel address). Target crystals with similar light output performance, decay time and / or energy resolution and small channel address differences can be divided into a crystal combination for subsequent assembly of a crystal array, effectively ensuring the performance similarity of each crystal in the crystal array and improving the array qualification rate.

[0129] In some embodiments, the arrangement position can be determined based on the light output performance of multiple target crystals in the crystal combination. For more information on the arrangement position, please refer to the relevant description above in this specification.

[0130] In some embodiments, the bonding assembly can be performed manually or automatically by a machine.

[0131] In some embodiments, the bonding assembly method includes bonding a plurality of target crystals together using a reflective filler to form an initial crystal array, wherein the thickness of the reflective filler is less than 1.5 mm. In some embodiments, the bonding assembly method includes bonding a plurality of target crystals together using a reflective film or reflective filler to form an initial crystal array, wherein the thickness of the reflective film or reflective filler is less than 0.5 mm.

[0132] The initial crystal array refers to the array obtained after bonding and assembly. The initial crystal array has not undergone any post-processing operation.

[0133] As an example, two target crystals from a plurality of target crystals can be bonded together using a reflective filling material to form at least one first array, where the first array is a 1×2 array. Two first arrays from the at least one first array can be bonded together using a reflective filling material to form a second array, where the second array is a 2×2 array. Four second arrays from the at least one second array can be bonded together using a reflective filling material to form a third array, where the third array is a 4×4 array. Four third arrays from the at least one third array can be bonded together using a reflective filling material to form a fourth array, where the fourth array is an 8×8 array. This process can be repeated to form an initial target array, where the initial target array is an N×N array. N is the circumference of the crystal array, which is a multiple of 2. The circumference N refers to the number of target crystals contained in each row or column of the crystal array.

[0134] Referring to FIG3 , the target crystal a11 and the target crystal a12 can be bonded to obtain a first array (a11, a12), the target crystal a21 and the target crystal a22 can be bonded to obtain a first array (a21, a22), the target crystal a13 and the target crystal a14 can be bonded to obtain a first array (a13, a14), and the target crystal a23 and the target crystal a23 can be bonded to obtain a first array (a23, a24); further, the first array (a11, a12) and the first array (a21, a22) can be bonded to obtain a second array (a11, a12; a21, a22), the first array (a13, a14) and the first array ( 3, a33, a34; a43, a44) are glued together to obtain a third array (a11, a12, a13, a14; a21, a22, a23, a24; a31, a32, a33, a34; a41, a42, a43, a44); and so on and so forth, an N×N crystal array can be obtained.

[0135] In some embodiments, when assembling the first array, a reflective filler material can be applied to one of the side surfaces of the two target crystals. After standing and drying for 5-20 seconds, the sides of the two target crystals coated with the reflective filler material are docked in a 1×2 array structure. The docking angle is adjusted and pressed until the size of the reflective filler material in the first array meets the requirements (i.e., the thickness of the reflective filler material is less than 1.5 mm), thereby obtaining the first array. In some embodiments, the side surface of the target crystal coated with the reflective filler material can be a surface other than the end surface of the target crystal. In some embodiments, each two adjacent target crystals can be assembled according to the arrangement position to obtain multiple first arrays.

[0136] In some embodiments, when assembling the second array, a reflective filling material can be applied to one of the large surfaces of the two first arrays, and the large surfaces coated with the reflective filling material on the two first arrays can be butt-jointed according to a 2×2 array structure to obtain a second array. In some embodiments, the large surfaces coated with the reflective filling material on the two first arrays can be butt-jointed by aligning the seams and verticality. In some embodiments, the large surface of the first array can be a side surface with a larger area other than the end surface of the first array. For example, the large surface formed after two target crystals are bonded together. In some embodiments, every two adjacent first arrays can be assembled according to the arrangement position to obtain multiple second arrays. It should be noted that when assembling the second array, similar operations can be performed as those for assembling the first array. For example, the second array can be obtained by standing to dry, butting, adjusting the butt-jointing angle, pressing, and other operations.

[0137] In some embodiments, when assembling the third array, a reflective filler can be applied to two adjacent sides of each of the four second arrays. The sides of the four second arrays coated with the reflective filler are then aligned one by one in a 4×4 array configuration to form the third array. In some embodiments, four adjacent second arrays can be assembled according to their arrangement to form multiple third arrays. It should be noted that the assembly of the third array can be performed similarly to that of the first array and will not be further described here.

[0138] By performing the above assembly operation multiple times, an N×N crystal array can be obtained.

[0139] As another example, two target crystals in a plurality of target crystals can be glued together in a 1×2 (1 is the number of rows, 2 is the number of columns) structure using a reflective filling material to obtain at least one 1×2 array; two first arrays in at least one 1×2 array can be glued together in a 2×2 (2 is the number of rows, 2 is the number of columns) structure using a reflective filling material to obtain a 2×2 array; three first arrays in at least one first array can be glued together in a 1×6 (1 is the number of rows, 6 is the number of columns), 6×1 (6 is the number of rows, 1 is the number of columns), 3×2 (3 is the number of rows, 2 is the number of columns) or 2×3 (2 is the number of rows, 3 is the number of columns) structure using a reflective filling material to obtain an array of corresponding structure; and so on to obtain an initial target array, which is a K×M array. At this time, the girth of the crystal array is (K, M), where the girth K represents the number of target crystals contained in each row, and the girth M represents the number of target crystals contained in each column.

[0140] In some embodiments, during the assembly process, it is necessary to ensure that the thickness of each layer of the reflective structure (e.g., reflective filling material) is less than 1.5 mm, the height deviation of the end faces of any two target crystals in each end face of the initial crystal array is less than 0.5 mm, and the seam misalignment distance is less than 0.2 mm. In some embodiments, during the assembly process, it is necessary to ensure that the thickness of each layer of the reflective structure (e.g., reflective filling material) is less than 0.5 mm, the height deviation of the end faces of any two target crystals in each end face of the initial crystal array is less than 0.5 mm, and the seam misalignment distance is less than 0.2 mm. Among them, the height deviation of the end face of the initial crystal array refers to the height difference between the highest end face and the lowest end face in the direction perpendicular to the end face among the end faces of the multiple target crystals constituting the initial crystal array. The highest end face and the lowest end face are the highest and lowest planes in the direction perpendicular to the end face, respectively. The seam misalignment distance refers to the deviation value of the seam between different target crystals.

[0141] In some embodiments of this specification, the seam misalignment distance can be minimized by assembling from 1 circle to N circles, so that the array size is optimal when the cumulative deviation of the N-circle crystal array is consistent with the size deviation of the 1-circle crystal array.

[0142] In some embodiments, the bonding assembly method may further include: an arranging step of arranging multiple target crystals into a row to form a crystal row; a coating step of applying glue on the crystal row so that one side of the reflective film is attached to one side of the crystal row, and the reflective film covers each target crystal in the crystal row; a pasting step of applying glue on the other side of the reflective film and pasting another crystal row on the other side of the reflective film.

[0143] In some embodiments, the adhesive assembly method may further include repeating the laminating and gluing steps to form an initial crystal array. For example, repeating the laminating and gluing steps M times may yield an initial crystal array comprising M+1 crystal rows. A crystal row is a structure consisting of at least two target crystals arranged in a row.

[0144] In some embodiments, after the alignment step or the coating step, the target crystal may be subjected to one or more of the following treatments: re-cutting, grinding, polishing, etc. For example, the target crystal may be re-cut to obtain a crystal bar with a flaky structure, and the re-cut flaky crystal bar may be ground and / or polished.

[0145] 4 , the target crystals b11, b12, b13, b14, and b15 can be arranged in a row to form a crystal row (b11, b12, b13, b14, and b15), and the target crystals b21, b22, b23, b24, and b25 can be arranged in a row to form a crystal row (b21, b22, b23, b24, and b25). Furthermore, the crystal row (b11, b12, b13, b14, and b15) can be bonded to the crystal row (b21, b22, b23, b24, and b25) through a reflective film, and then the crystal row (b21, b22, b23, b24, and b25) can be bonded to other crystal rows through a reflective film. Similarly, an initial crystal array comprising M+1 layers of crystal rows can be obtained through M coating steps and M pasting steps.

[0146] In some embodiments, when assembling a crystal row, a reflective filler can be applied to one side of every two target crystals. The two target crystals with the reflective filler coated sides can then be butted together to form multiple 1×2 arrays. Furthermore, a reflective filler can be applied to one facet of every two 1×2 arrays. The two 1×2 arrays with the reflective filler coated faces can then be butted together in a 1×4 array configuration to form multiple 1×8 arrays. This can be repeated in this manner to form a 1×S crystal row, where S is the number of target crystals contained in the row.

[0147] In some embodiments, when assembling a crystal row, two target crystals can be bonded together using a reflective filling material, and then the third target crystal can be bonded to the connector of the first two target crystals using a reflective filling material. This process can be repeated to obtain a 1×S crystal row, where S is the number of target crystals contained in the crystal row.

[0148] In some embodiments, the process of bonding the reflective film to the row of crystals includes: applying glue (herein, applying glue refers to applying a specific type of glue, such as photosensitive curing glue, heat-sensitive curing glue, resin glue, or fluid self-drying glue) to one of the large surfaces of the row of crystals; placing the reflective film in contact with the large surface coated with the specific type of glue; pressing the reflective film to adhere to the large surface of the row of crystals while simultaneously removing any air bubbles; curing the film using a UV lamp; and finally adjusting the size and flatness of the reflective film. The large surface of the row of crystals refers to a large plane formed by the side surfaces of multiple target crystals. In some embodiments, the reflective film can completely cover the corresponding side surface of each target crystal in the row of crystals. For example, when bonding the reflective film to one of the large surfaces of the row of crystals, the reflective film can completely cover the corresponding side surface of each target crystal within the large surface. In other embodiments, the reflective film can partially cover the corresponding side surface of at least one target crystal in the row of crystals. In other words, for some target crystals, the reflective film can only cover a portion of the side surface. The corresponding side surface of the target crystal can be any surface other than the light-emitting surface of the target crystal. Through such a setting, the light propagation between the two corresponding target crystals can be adjusted by adjusting the ratio of the area of ​​the reflective film between the two adjacent target crystals in two adjacent columns to the area of ​​the corresponding side surface, thereby adjusting the light output of the entire crystal array.

[0149] In some embodiments, when applying glue on one of the large sides of the crystal row, at least one continuous line of a specific type of glue may be applied on the large side of the crystal row. The direction of applying the glue may be the same as the direction of the long side of the crystal row.

[0150] In some embodiments, when using an ultraviolet lamp for curing, the reflective film can be irradiated with the ultraviolet lamp for a period of time (for example, 3 to 25 seconds), and then the thickness of the colloid and the position of the reflective film can be adjusted by pressing and / or stretching, and then the reflective film can be continued to be irradiated with the ultraviolet lamp for a period of time (for example, 5 to 25 seconds) until the colloid is completely cured.

[0151] In some embodiments, adjusting the size of the reflective film may include adjusting the size of the reflective film to be consistent with the size of the largest surface of the crystal row. In some embodiments, adjusting the flatness of the reflective film may include adjusting the flatness of the reflective film to less than 0.5 mm. Methods for adjusting the size and flatness include cutting, polishing, and any other feasible methods.

[0152] In some embodiments, the process of bonding a row of crystals to a reflective film includes applying glue to the reflective film, attaching the large surface of another row of crystals to the reflective film using a right-angle fixture, removing bubbles, adjusting the position of the row of crystals, and finally curing using an ultraviolet lamp.

[0153] With the advancement of technology, scintillation crystal arrays are becoming smaller and smaller, and the demand for more pixels is increasing. Crystal bar sizes are becoming increasingly smaller, and crystal bar breakage may occur during assembly, making array assembly increasingly difficult. In some embodiments of this specification, by first assembling multiple target crystals into multiple crystal rows, and then assembling multiple crystal rows into an initial crystal array, array assembly efficiency and array yield can be effectively improved.

[0154] In some embodiments, after obtaining the initial crystal array, the bonding assembly method may further include: grinding and / or polishing the first and second surfaces of the initial crystal array, the first surface and / or the second surface being light-emitting surfaces, and the first and second surfaces being opposite surfaces; coating the other side surfaces with a reflective filling material to form a reflective layer wrapping the other side surfaces of the initial crystal array; the other side surfaces are the side surfaces other than the first surface and the second surface; wrapping the side surfaces of the initial crystal array other than the light-emitting surfaces with at least one protective layer to obtain a crystal array.

[0155] In some embodiments, one end face of the initial crystal array can serve as the first face, and the other opposite end face can serve as the second face. In some embodiments, the end faces of the initial crystal array can include concave and convex points with a height difference of no more than 0.08 mm. The height difference of the concave and convex points refers to the height difference between the deepest concave point and the highest convex point.

[0156] In some embodiments, the first surface and the second surface may both be light-emitting surfaces. In some embodiments, the first surface or the second surface may be the light-emitting surface.

[0157] In some embodiments, dry grinding can be used to grind the first and second surfaces of the initial crystal array, or only the first surface. In some embodiments, any other feasible grinding method can also be used for grinding, which is not limited here.

[0158] In some embodiments, the angular deviation between the actual angle between the first surface and / or the second surface and the preset surface after grinding and the preset angle is less than 1 degree, and the flatness is less than 0.05 mm. In some embodiments, the angular deviation between the fourth angle between the first surface and / or the second surface and the fourth preset surface after grinding and the fourth preset angle is less than 0.5 degrees, and the flatness is less than 0.05 mm. Wherein, the fourth angle refers to the actual angle between the first surface and / or the second surface and the fourth preset surface. The fourth preset angle refers to the angle value expected to be achieved between the first surface and / or the second surface and the fourth preset surface. In some embodiments, the fourth preset surface can be a side surface adjacent to the first surface and / or the second surface. In some embodiments, the first surface and the second surface can be each other's fourth preset surface, that is, the fourth preset surface corresponding to the first surface can be the second surface, and the fourth preset surface corresponding to the second surface can be the first surface. The fourth preset angle is similar to the first preset angle and the second preset angle. For more explanation, please refer to the relevant description above.

[0159] In some embodiments, the first and second surfaces of the initial crystal array can be polished by a single-sided wet polishing method, or only the first surface can be polished. In some embodiments, any other feasible polishing method can also be used for polishing, which is not limited here. In some embodiments, the angular deviation of the first and / or second surfaces after polishing is less than 0.5 degrees, and the surface roughness Ra is less than 0.1 μm. In some embodiments, the angular deviation of the first and / or second surfaces after polishing is less than 1 degree, the smoothness of the first surface after polishing is not greater than T3, and the smoothness of the second surface after polishing is not greater than T3-H. In some embodiments, the height difference between the concave and convex points in the first and / or second surfaces after polishing is not greater than 0.08 μm.

[0160] In some embodiments, dry grinding may be used first, and then single-side wet polishing may be used for polishing.

[0161] During assembly, the end faces of the target crystals may be misaligned, resulting in uneven ends and large angle deviations between the ends and the sides of the initial crystal array. Re-polishing the light-emitting surface and its opposing surface can effectively adjust the end face flatness and height deviation of the initial crystal array.

[0162] In some embodiments, a reflective filler material can be uniformly applied to the other side surfaces of the initial crystal array to form a reflective layer that wraps around the other side surfaces of the initial crystal array. In some embodiments, after coating, the reflective layer can be dried, polished, and subjected to other processes such as right-angle tooling. In some embodiments, by uniformly applying the reflective filler material, the flatness of the reflective layer can be less than a preset flatness threshold. In some embodiments, the preset flatness threshold can be 0.001 μm to 0.5 mm. In some embodiments, the preset flatness threshold can be 0.001 μm to 0.3 mm. In some embodiments, the preset flatness threshold can be 0.001 μm to 0.2 mm. In some embodiments, the preset flatness threshold can be 0.2001 mm to 0.5 mm. In some embodiments, the preset flatness threshold can be 0.2001 mm to 0.3 mm. In some embodiments, the preset flatness threshold can be 0.3001 mm to 0.5 mm. In some embodiments, the preset flatness threshold can be one or more of 0.5 mm, 0.4 mm, 0.3 mm, 0.2 mm, 0.1 mm, etc. The right-angle tooling may refer to using a right-angle tool to perform right-angle processing on the reflective layer. Exemplary right-angle tools include but are not limited to a vise, a right-angle block, and the like.

[0163] In some embodiments, the thickness of the reflective layer is 0.01 mm to 2 mm. In some embodiments, the thickness of the reflective layer is 0.01 mm to 1.5 mm. In some embodiments, the thickness of the reflective layer is 0.01 mm to 1 mm. In some embodiments, the thickness of the reflective layer is 0.01 mm to 0.5 mm. In some embodiments, the thickness of the reflective layer is 0.1 mm to 2 mm. In some embodiments, the thickness of the reflective layer is 0.1 mm to 1.5 mm. In some embodiments, the thickness of the reflective layer is 0.1 mm to 1 mm. In some embodiments, the thickness of the reflective layer is 0.1 mm to 0.5 mm. In some embodiments, the thickness of the reflective layer is 0.5 mm to 2 mm. In some embodiments, the thickness of the reflective layer is 0.5 mm to 1.5 mm. In some embodiments, the thickness of the reflective layer is 0.5 mm to 1 mm.

[0164] In some embodiments, at least one protective layer can be wrapped around the side surfaces other than the light-emitting surface in the initial crystal array to obtain a crystal array. For example, when the first surface and the second surface are both light-emitting surfaces, at least one protective layer can be wrapped around the other side surfaces to obtain a crystal array. For another example, when the light-emitting surface only includes the first surface, at least one protective layer can be wrapped around the second surface and the other side surfaces to obtain a crystal array. In some embodiments, the protective layer can be aluminum foil. Aluminum has a low light absorbance, and aluminum foil can ensure that the crystal array has a low light absorbance, and on the other hand, ensure that the crystal array does not deform. In some embodiments, the protective layer can also be any other feasible material, which is not limited here.

[0165] It should be noted that no foreign matter contamination visible to the naked eye should occur during the entire assembly process, and each item needs to be inspected and wiped for confirmation before use.

[0166] In some embodiments of the present specification, initial crystals that meet the index conditions are initially screened based on indicators such as the crystal's light output performance, decay time, and energy resolution. This can improve the light output uniformity, energy resolution consistency, and decay time consistency of the individual crystals in the array, helping to ensure the excellent performance of the target array constituting the crystal array and ensuring that the peak position of the array standard model deviates less from the peak position value of the corresponding single crystal. The crystal array is obtained by bonding and assembling the pretreated initial crystals, which can effectively reduce the difficulty of preparing the crystal array, shorten the production cycle, and improve production efficiency. Furthermore, by pre-treating the initial crystals by cutting, grinding, and polishing, target crystals with smooth surfaces, low roughness, and low angular deviation can be obtained, thereby improving crystal utilization and preparing for subsequent array arrangement to improve the pass rate and resolution of the crystal array. Using a reflective structure configured with barium compounds and / or titanium-containing compounds, multiple target crystals are assembled into a crystal array, which can optimize light reflection between the target crystals, reduce the unevenness of light output performance and the distance of seam misalignment, and form a high-strength, crack-resistant crystal array, effectively improving the array yield and ensuring the array's light output performance. By following a specific bonding and assembly method, the packaging structure of the crystal array can be optimized, the generation of bubbles can be avoided, the friction and displacement of the crystal strips during the colloid curing process can be avoided, the assembly efficiency of the crystal array can be improved, and at the same time, a crystal array with a compact structure, no light leakage, and no light crosstalk can be obtained.

[0167] In some embodiments, the light output performance of multiple target crystals may be detected 510, and the arrangement positions of the multiple target crystals may be determined 540 based on the light output performance 510. The operation of determining the arrangement positions of the multiple target crystals 540 may be performed by an operator or automatically by a device.

[0168] In some embodiments, the light output performance of the target crystal includes light yield and relative light yield difference.

[0169] In some embodiments, the properties of the target crystal may also include light refractive index, light reflectivity, luminous range, decay time, energy resolution, emission wavelength, damage resistance, etc.

[0170] In some embodiments, the light output performance of the target crystal can be detected by a detection instrument. Exemplary detection instruments include but are not limited to spectrometers, spectrophotometers, and plug-in spectrometers.

[0171] The arrangement position refers to the placement of multiple target crystals in the crystal array. For example, the arrangement position of a target crystal may correspond to a position in a row of the crystal array.

[0172] The arrangement positions can be determined in a variety of ways. In some embodiments, multiple target crystals in a crystal assembly constituting a crystal array can be randomly arranged and combined to obtain the arrangement positions of the multiple target crystals. In some embodiments, multiple target crystals with consistent performance or small performance deviations in the crystal assembly can be placed in a crystal row, and the multiple crystal rows can be randomly arranged and combined to obtain the arrangement positions of the multiple target crystals.

[0173] In some embodiments, the result of the random arrangement and combination may be determined as an initial arrangement position, and the initial arrangement position may be adjusted based on the light output performance of the target crystal to determine a final arrangement position.

[0174] In some embodiments, the light yield of any target crystal within the edge range of the crystal array is equal to or greater than the average light yield of the target crystals within the inner range. Accordingly, the target crystal with the higher light yield can be placed at the arrangement position corresponding to the edge range of the crystal array. For example, the target crystal with the higher light yield within the inner range can be swapped with the target crystal with the lower light yield within the edge range. The edge range refers to the range of the outermost target crystals on the crystal array. The inner range refers to the range of the crystal array excluding the edge range.

[0175] In some embodiments of this specification, by setting the target crystal with higher light yield within the edge range of the crystal array, the target crystal with better light output performance can be placed at the outermost edge of the crystal array, effectively avoiding edge light leakage and reducing the impact on the overall performance of the crystal array.

[0176] In some embodiments, target crystals with similar light output performance can be placed in adjacent positions based on the initial arrangement to obtain the final arrangement. Adjacent positions can be adjacent rows and / or columns. By placing target crystals with similar light output performance in adjacent positions, the light output consistency of the crystal array can be effectively ensured.

[0177] FIG. 5 is a schematic diagram of determining a crystal arrangement position according to some embodiments of the present specification.

[0178] 5 , in some embodiments, initial arrangement positions 520 of a plurality of target crystals may be determined; based on the initial arrangement positions 520 and light output performance 510, an arrangement position 540 may be determined using a position determination model 530. The operation of determining the arrangement position based on the initial arrangement positions and light output performance may be performed by a device (e.g., a device for assisting crystal alignment).

[0179] The initial arrangement position refers to the arrangement position of the target crystals that has been preliminarily determined. In some embodiments, the target crystals in the crystal assembly can be randomly arranged and combined multiple times to obtain multiple initial arrangement positions. In some embodiments, the target crystals in the crystal assembly can be randomly arranged and combined, and then the positions of some of the target crystals can be swapped to obtain multiple initial arrangement positions.

[0180] The position determination model can be used to determine the arrangement positions of multiple target crystals constituting the crystal array. In some embodiments, the position determination model can be a machine learning model. In some embodiments, the position determination model can include any one or a combination of various feasible models such as a recurrent neural network (RNN) model, a deep neural network (DNN) model, and a convolutional neural network (CNN) model.

[0181] In some embodiments, the input of the position determination model may include the light output performance and initial arrangement positions of multiple target crystals in the crystal combination, and the output is the arrangement positions of the multiple target crystals.

[0182] In some embodiments, training can be performed using various methods based on multiple first training samples with first labels, and model parameters can be updated to obtain a trained position determination model. For example, training can be performed using a gradient descent method. As an example only, multiple first training samples with first labels can be input into an initial position determination model, a loss function can be constructed using the first labels and the results of the initial position determination model, and the parameters of the initial position determination model can be iteratively updated based on the loss function. When the loss function of the initial position determination model meets preset conditions, model training is completed, resulting in a trained position determination model. The preset conditions may include convergence of the loss function, a threshold number of iterations, and the like.

[0183] In some embodiments, the first training sample may include the light output performance and initial arrangement positions of multiple target crystals in the sample crystal combination, and the first label may be the arrangement positions of the multiple target crystals in the sample crystal combination. In some embodiments, the first training sample may be obtained based on historical data. The first label corresponding to the first training sample may be obtained through manual annotation.

[0184] In some embodiments of the present specification, by determining the arrangement positions of multiple target crystals that constitute a crystal array, the crystal utilization rate and array qualification rate can be effectively improved; by processing the light output performance and initial arrangement positions of multiple target crystals through a position determination model, the self-learning ability of the machine learning model can be used to find patterns from a large amount of data, and obtain the correlation between the light output performance, the initial arrangement position and the arrangement position, thereby improving the accuracy and efficiency of determining the arrangement position, ensuring that the edge pixels in a group of arrays are clearer and the positions of each pixel are more uniform.

[0185] The following is an example of bonding and assembling a crystal bar with a size of 3.15*3.15*20. The bonding and assembling includes:

[0186] Step 1: Partitioning and Layout: The performance testing workshop tests the performance of the crystal bars and zons the arrays according to performance ranges. The workshop reads the crystal performance data from the layout, simulates the placement of the crystal bars, predicts the array performance parameters, and outputs the optimal arrangement position for each crystal bar and a unique array ID number (e.g., a code indicating the position of the crystal bar in the array).

[0187] Step 2, bonding and assembly: The assembler begins assembly according to the arrangement position. Apply reflective filler material to the same side of one or two 1×1 crystal strips, let dry for 15 seconds, then glue the two crystal strips together, gently squeeze and measure the size until the appearance size of the 1×2 array meets 30.5*6.8*20. Apply reflective filler material to the large surface of the 1×2 array and assemble it into a 2×2 array. Continue to assemble all 1×2 arrays into a 2×2 array. Use the same method to assemble 4×4, ..., N×N arrays to obtain the initial crystal array. During the assembly process, pay attention to the flatness of the upper and lower end faces, and the height difference should be less than 0.2mm. Continue to complete one or more groups of N×N arrays in the above manner.

[0188] Step 3, grinding: Use dry grinding method to grind the light-emitting surface and the opposite side of the initial crystal array. The angle deviation between the actual angle between the light-emitting surface and the opposite side of the light-emitting surface and the corresponding preset angle is less than 0.6°, the end face flatness is less than 0.05mm, and the overall height of the crystal array is 20mm.

[0189] Step 4: Polishing: Polish the light-emitting surface and the surface opposite the light-emitting surface of the initial crystal array using a single-sided wet polishing method. The surface roughness Ra of the light-emitting surface is no greater than 0.08 μm, the surface roughness Ra of the surface opposite the light-emitting surface is no greater than 2 μm, and the actual angle between the light-emitting surface and the surface opposite the light-emitting surface deviates from the corresponding preset angle by less than 0.5°.

[0190] Step 5: Peripheral Encapsulation: Except for the light-emitting surface, coat all other sides with a reflective filler to form a reflective layer that covers the other sides of the initial crystal array. After drying, sand with 1000-2500 grit sandpaper and pass through a right-angle fixture. The peripheral encapsulation layer should be uniform, no thicker than 5mm, and less than 0.5mm flat.

[0191] Step 6: Wrap with protective layer: Wrap a layer of aluminum foil around the periphery of the crystal array except for the shiny surface. The array assembly is complete.

[0192] Step 7: Performance review: Obtain the actual test data of the crystal array (e.g., light output performance, light output surface finish, etc.) and compare them with the standard data, and store the comparison data in the robot system for analysis.

[0193] The crystal array assembled from the crystal strips in the above embodiment achieves a light output performance exceeding 23,000 Ph / MeV. Under the same conditions, the relative light output difference between each crystal strip in the array is no more than 3,600 Ph / MeV. This improves array assembly efficiency by 20% and array yield by 15%. The present invention is not limited to the above embodiment; any changes, modifications, substitutions, combinations, or simplifications that do not depart from the spirit and principles of the present invention are considered equivalent replacements and are encompassed within the scope of protection of the present invention.

[0194] In some embodiments, the relevant information of the initial crystal includes determining the initial light output value and the target light output value of the initial crystal, and the processing plan includes a light adjustment plan for adjusting the light output value of the initial crystal. Correspondingly, based on the relevant information of the initial crystal, determining the processing plan for the initial crystal may include: determining the light adjustment plan for the initial crystal based on the initial light output value and the target light output value of the initial crystal.

[0195] The following description of the present invention will describe the adjustment of the light output value of the initial crystal.

[0196] FIG. 6 is an exemplary flow chart of a method for regulating light output of a crystal according to some embodiments of the present specification.

[0197] In some embodiments, one or more steps of process 600 may be performed by an operator, or by crystal production and processing equipment (eg, a grinder, a polisher, etc.), crystal performance inspection equipment, etc. As shown in FIG6 , process 600 includes the following steps.

[0198] Step 610: Determine the initial light output value of the initial crystal.

[0199] The initial crystal may also include a raw crystal produced by a crystal growth apparatus. For example, the initial crystal may be a crystal obtained by cutting a raw crystal produced by a crystal growth apparatus. The raw crystal refers to a crystal rod or other shaped crystal material grown by the crystal growth apparatus.

[0200] The initial crystal is a scintillation crystal. For example, the initial crystal can be a combination of one or more crystals selected from various types, such as cerium bromide crystals, cerium-doped lanthanum bromide crystals, cerium-doped lanthanum chloride crystals, bismuth germanium oxide (BGO) crystals, copper bromide crystals, sodium iodide crystals, cesium iodide crystals, perovskite (CsPbBr3) crystals, silicate scintillation crystals, and garnet scintillation crystals. For another example, the initial crystal can include at least two of the following elements: Lu (lutetium), Si (silicon), Y (yttrium), Ca (calcium), Mg (magnesium), Al (aluminum), Ga (gallium), Sc (scandium), In (indium), La (lanthanum), Br (bromine), Ba (barium), S (sulfur), Sn (tin), Zn (zinc), Zr (zirconium), Hf (hafnium), Cd (cadmium), Pb (lead), Eu (europium), Ce (cerium), Bi (bismuth), Ge (germanium), I (iodine), Na (sodium), Cs (cesium), and Cu (copper). That is to say, the initial crystal is a scintillation crystal including at least two of the elements Lu, Si, Y, Ca, Mg, Al, Ga, Sc, In, La, Br, Ba, S, Sn, Zn, Zr, Hf, Cd, Pb, Eu, Ce, Bi, Ge, I, Na, Cs, Cu, etc.

[0201] In some embodiments, the raw crystal may be quality inspected before being cut, and only those that pass the quality inspection are cut. In some embodiments, the quality inspection includes spot checks or full performance inspections. By way of example only, a performance quality inspection criterion may include a light output value greater than 1500 nm.

[0202] The inventors found that when preparing the original crystal, the trivalent Ce element (i.e. Ce 3+ ) and / or tetravalent Ce element (ie Ce 4+ ), adjust the light output value of the original crystal, and then adjust the light output value of the initial crystal. For example, when preparing the original crystal, the Ce doped in the crystal can be adjusted. 3+ and / or Ce 4+ The content of Ce is used to adjust the light output value of the original crystal. It can be understood that the luminescence center in the crystal is Ce. 3+ , if Ce 3+ Low doping concentration may lead to too low activation ion concentration, fewer luminescence centers, and low luminescence intensity. 3+Too high a doping concentration may cause concentration quenching and thus reduce the luminous efficiency. 3+ and / or Ce 4+ Doping concentration to obtain the best luminescence effect.

[0203] Taking LYSO crystal as an example, an important physical parameter of LYSO is luminescence yield (i.e. light output value), which is directly proportional to the Ce doped in LYSO. 3+ 、Ce 4+ There is a direct relationship between the ion content and the ion content. The analysis is as follows: When the ray enters the crystal, the energy loss excites the electron transition, and then the electron jumps from the conduction band or the excitation band to the valence band to de-excite and emit photons. When the ray enters the LYSO crystal, there is also another non-radiative de-excitation process, which is de-excitation by emitting phonons. Generally, pure crystals (that is, crystals without other elements) have a relatively low self-absorption luminescence efficiency, so some activators (such as Ce) need to be doped. 3+ 、Ce 4+ ions), making them luminescence centers, which can effectively prevent self-absorption and improve luminescence efficiency. Among them, the electron-hole pairs generated by ionizing radiation release energy in two ways:

[0204] Method 1: Form self-trapped exciton STE (Self-Traped-Exciton), and then transfer the energy to the disturbed Then de-excited photons of 340nm are emitted, and the process is as follows: Ce 3+ +e→Ce 2+ 2F - +h→(F2) -

[0205] Among them, e is electron, h is hole, F - is an ion, Traps is a photon capture center in the crystal, for excited state.

[0206] Method 2: Formation of Ce-captured excitons CeTE, that is, Ce on the normal lattice 3+ The excited state (Ce 3+ )*P1, de-excites and emits scintillation photons at 300nm (286nm and 305nm), the process is as follows: Ce 3+ +e+h→CeTE→Ce 3+ +hv(286nm,305nm)

[0207] Wherein, e is an electron, h is a hole, and CeTE is the excited state of the Ce-captured exciton.

[0208] From the way the electron-hole pairs generated by the above ionizing radiation release energy, it can be seen that the Ce doped in the crystal 3+ The content of will affect the light output value of the crystal.

[0209] The luminescence behavior in LYSO crystals can be divided into the linear spectrum of fn configuration and the broadband spectrum of f→d transition. The transition within 4fn configuration is the result of the perturbation of the odd-order term of the crystal field. When Ce is excited by external light, the ground state electrons transition to the excited state and then exit the excitation process. Part of the energy is released in the form of photons, part of the energy is transferred to the surrounding crystal lattice oscillation in the form of heat energy without emitting light, and part of the energy is in the metastable state of the excited state. Further, the inventors found that Ce 4+ The introduction of ions makes it easier for electrons in the conduction band to be absorbed by Ce 4+ Ion capture can remove Ce from the matrix 3+ The energy level splitting caused by the crystal field effect of ions leads to energy quenching due to crystal lattice defects or other impurities. 4+ Ion energy is transferred to Ce 3+ The energy of the electron in the excited metastable state causes it to release a photon and form an excited state Ce 3+ , and finally the metastable Ce 3+ Combine with holes in the valence band to return to the ground state Ce 4+ Complete a fluorescence process; while the ground state Ce 3+ Capture holes to form transient Ce 4+ , and then the conduction band electrons combine to form excited state Ce 3+ , excited state Ce 3+ The fluorescence process is completed by radiating photons back to the ground state. 4+ Ions compared to Ce 3+ Ions can capture electrons and radiate photons faster, reducing the probability of electron trap capture. The process of capturing holes is a non-radiative process and will not cause the afterglow phenomenon of the scintillation crystal. It can effectively increase the light output of the crystal, shorten the decay time, and weaken the afterglow.

[0210] In some embodiments, when preparing the original crystal, elements such as Ca / Mg / Sn / Cl may be doped into the crystal to reduce crystal afterglow and shorten decay time.

[0211] After numerous experiments (i.e., verification tests that adjusting the surface roughness of a crystal results in changes in the light output value), the inventors discovered that the light output value of a crystal can also be related to factors such as the surface roughness of the crystal. Specifically, the light output value of a crystal is positively correlated with the surface roughness of the crystal, i.e., the rougher the surface of the crystal (i.e., the greater the surface roughness), the greater the light output value of the crystal. For example, after each surface of a crystal is polished, its light output will decrease and its decay time will increase. This is because when the surface of a crystal is very smooth, it is equivalent to a plane mirror, and photons will escape through the surface, thereby reducing the number of photons emitted from the crystal interior, resulting in a decrease in brightness. At the same time, the reflected photons will only reach the crystal end face after countless reflections within the crystal and be received by the optoelectronic device, which will increase the optical path and cause the crystal light decay time to increase. For another example, when the crystal surface has different concave and convex points, when light reaches the crystal surface, the concave and convex points at different angles will reflect more photons back to the crystal. The optoelectronic conversion device on the light output surface of the crystal will receive more photons in the same amount of time, i.e., the light output value of the crystal will increase. In addition, due to the varying degrees of unevenness on the crystal surface, light scattering increases and the scattering angle becomes larger. Surface scattering may introduce additional photon paths, prolonging the propagation time of photons within the crystal, thereby increasing the decay time and shortening the time it takes for photons to be emitted from the crystal end face, thereby reducing light output. For the same crystal with varying surface roughness, the difference in light output ranges from 10 to 300 microseconds, and the difference in decay time ranges from 1 to 8 picoseconds. In other words, changes in crystal surface roughness affect the propagation and escape of photons within the crystal, thereby affecting changes in light output and decay time.

[0212] In the verification experiment that the adjustment of the surface roughness of the crystal leads to the change of the light output value, 10 crystal bars were selected. The sizes of the 10 crystal bars are similar, and the roughness of the light output surface is not more than 0.03μm. In the verification experiment, the surface roughness of the crystal was changed three times, and the light output value and decay time of the crystal were measured after each change of the surface roughness of the crystal, and the experimental data shown in the following Tables 1 to 5 were obtained. Among them, Table 1 contains the surface roughness average value (that is, the average value of the surface roughness of each surface) of the 10 crystal bars before processing and the measurement data of the light output value and decay time; Table 2 contains the surface roughness average value and light output value and decay time measurement data of the 10 crystal bars after the first surface roughness change, as well as the measurement data of the light output difference and decay time difference before and after the first surface roughness change; Table 3 contains the surface roughness average value and light output value average value and decay time measurement data of the 10 crystal bars after the second surface roughness change, as well as the light output difference and decay time difference before and after the second surface roughness change. Table 4 contains the measurement data of the mean surface roughness, mean light output value, and mean decay time of the 10 crystal bars after the third surface roughness change, as well as the measurement data of the light output difference and decay time difference before and after the third surface roughness change; Table 5 contains the measurement data of the mean surface roughness, mean light output value, and mean decay time of the 10 crystal bars before processing, after the first surface roughness change, after the second surface roughness change, and after the third surface roughness change, as well as the measurement data of the light output difference and decay time difference before and after each surface roughness change.

[0213] Table 1:

[0214] Table 2:

[0215] Table 3:

[0216] Table 4:

[0217] Table 5:

[0218] From the measurement data in Tables 1 to 5, it can be concluded that when the surface roughness of the crystal bar increases, the light output of the crystal bar becomes higher and the decay time becomes lower.

[0219] In some embodiments, the initial crystal can be processed to adjust the surface roughness of the initial crystal, thereby adjusting the light output value of the initial crystal, thereby obtaining an initial crystal with a light output value that meets the requirements. Processing refers to processing that changes the surface roughness. For more information on processing that changes the surface roughness, see step 640 and its related description.

[0220] In some embodiments, the initial crystal can be obtained by pre-treating the original crystal. Pre-treatment refers to a processing operation to adjust the size of the crystal. In some embodiments, pre-treatment may include cutting, grinding, polishing, and other processes on the original crystal. It should be noted that the grinding and polishing processes in the process of pre-treating the original crystal are to make the cut crystal (i.e., the crystal obtained after cutting the original crystal) reach the ideal size. It is understandable that due to the low cutting accuracy, the size of the cut crystal can be fine-tuned by grinding and polishing so that the size of the cut crystal reaches the ideal size.

[0221] In some embodiments, the cutting process may be a processing operation to change the shape, size, etc. of the crystal. In some embodiments, the cutting process may include one or more of inner circle cutting, multi-wire cutting, and single-wire cutting.

[0222] In some embodiments, a crystal bar can be obtained as an initial crystal by cutting the original crystal. The cross-section of the crystal bar perpendicular to its length can be rectangular or square. In some embodiments, the size of the crystal bar can range from length (0.2 mm to 6 mm) to width (0.2 mm to 6 mm) to height (3 mm to 100 mm). In some embodiments, the size of the crystal bar can also be at least one of 0.2*0.2*10 mm, 0.2*0.2*50 mm, 0.2*0.2*100 mm, 2*2*10 mm, 2*2*50 mm, 2*2*100 mm, 4*4*10 mm, 4*4*20 mm, 4*4*50 mm, 4*4*100 mm, etc., which can be set according to specific needs and is not limited here.

[0223] It should be noted that the cross-sectional shape of the initial crystal obtained by the above-mentioned cutting process is only illustrative and may also be other shapes. For example, the cross-sectional shape may be triangular, hexagonal, elliptical, etc. The longitudinal direction may be the axial direction of the initial crystal or the direction with the largest dimension among the three orthogonal directions.

[0224] In some embodiments, lapping can be a process in which abrasive particles are applied to or pressed into a lap, and the lap and the crystal are subjected to relative motion under a certain pressure to perform a finishing operation on the crystal surface. In some embodiments, the lapping process can include one or more of single-sided lapping, double-sided lapping, and the like.

[0225] In some embodiments, the polishing process may be a processing operation in which the surface of the initial crystal is processed mechanically, chemically, or electrochemically to reduce the surface roughness of the initial crystal to obtain a bright and smooth surface.

[0226] In some embodiments, taking the initial crystal as a crystal bar as an example, the original crystal can be processed through the following steps S1 to S9 to obtain a bar-shaped initial crystal.

[0227] S1. Use a cutting machine to cut the crystal rod to obtain multiple crystal segments that meet the height requirements. The height deviation between any two crystal segments in the multiple crystal segments should be no greater than 0.1 mm. In some embodiments, the cutting accuracy of the cutting machine can be 0.03 mm to 1 mm. In some embodiments, when the height of the crystal segment does not meet the height requirement, the height of the crystal segment can be adjusted by grinding to meet the height requirement. In some embodiments, the height requirement can include: the height of the crystal segment is within 3 mm to 100 mm.

[0228] S2. Use a cutting machine to cut the crystal segment along its height direction to obtain multiple crystal slices that meet thickness requirements. The thickness deviation between any two crystal slices in the multiple crystal slices should be no greater than 0.1 mm. In some embodiments, when the thickness of the crystal slice does not meet the thickness requirement, the thickness of the crystal slice can be adjusted by grinding to meet the thickness requirement. In some embodiments, the thickness requirement may include: the thickness of the crystal slice or adhesive sheet is within the range of 0.2 mm to 6 mm.

[0229] By meeting the above height and thickness requirements, a crystal sheet with a width of 0.2mm-6mm and a height of 3mm-100mm can be obtained.

[0230] The height requirements and thickness requirements in the above embodiments can be set according to actual production needs, and the embodiments of this specification do not limit this.

[0231] In some embodiments, the process of grinding a crystal segment or crystal sheet may include: placing the crystal segment or crystal sheet in a planetary wheel, allowing the planetary wheel to rotate with the grinding disc, the grinding disc includes an upper disc and a lower disc, and the disc surface has a sand leakage gap of 0.3mm-0.5mm, with an interval of 10mm-50mm. The upper disc and the lower disc are in a positive and negative rotation relationship, and the crystal segment or crystal sheet is double-sided ground by reversing the upper and lower discs. Among them, the mesh size of the grinding sand, the grinding speed and the grinding pressure can be determined based on experience. For example, the grinding sand is less than 500 mesh, the grinding speed is less than 30 rpm, the positive grinding pressure is not greater than 0.08MPa, and the reverse pressure is not greater than 0.15MPa.

[0232] In some embodiments, the height of the crystal segment or the thickness of the crystal sheet may be measured and recorded multiple times during the grinding process until the height of the crystal segment meets the height requirement or the thickness of the crystal sheet meets the thickness requirement. For example, the height of the crystal segment or the thickness of the crystal sheet may be measured and recorded every five grinding revolutions.

[0233] During the grinding process, it is necessary to observe whether the crystal segment or crystal sheet is scratched. If scratches are detected on the surface of the crystal segment or crystal sheet during the grinding process, the grinding equipment needs to be cleaned and the abrasive needs to be replaced in time.

[0234] In some embodiments, after grinding is completed, multiple crystal sheets with thicknesses that meet thickness requirements can be regarded as preliminarily qualified crystal sheets, and subsequent processing steps (eg, step S3) can be performed on the preliminarily qualified crystal sheets.

[0235] In some embodiments, after grinding is completed, the surface roughness of each surface of the crystal piece can also be measured, and the crystal piece with a surface roughness of each surface not greater than 1.5 μm is selected as a preliminarily qualified crystal piece, and subsequent processing steps (for example, step S3) are performed on the preliminarily qualified crystal piece.

[0236] S3. Polishing the large surfaces of the preliminarily qualified crystal sheet to obtain a crystal sheet that meets the polishing requirements. The large surfaces refer to the two opposite surfaces with the largest areas on the crystal sheet.

[0237] In some embodiments, the polishing requirement may be to make the surface roughness of the large surface of the crystal piece no greater than 1.5 μm. The polishing requirement in the above embodiment can be set according to actual production requirements, and the embodiments of this specification do not limit this.

[0238] In some embodiments, the polishing pad material can be determined based on the polishing requirements of different materials and different precision requirements. Examples of polishing pad materials include polyurethane, non-woven fabrics, composite materials, epoxy resins, sulfonated polyisoprene, rayon polishing pads, wool woven polishing pads, and polyurethane resin polishing pads. The choice of polishing pad material can be determined by the specific requirements of the polishing process, such as physical properties such as hardness, compression ratio, moisture retention, surface roughness, and density.

[0239] In some embodiments, the polishing abrasive particle size, polishing speed, polishing pressure, etc. can be set based on experience. For example, the polishing abrasive particle size is less than 10 μm, the polishing speed is less than 30 rpm, the positive polishing pressure is no more than 0.08 MPa, and the reverse polishing pressure is no more than 0.15 MPa.

[0240] In some embodiments, if scratches are detected on the surface of the crystal wafer during the polishing process, the equipment needs to be cleaned and the abrasive needs to be replaced in a timely manner.

[0241] In some embodiments, after polishing is completed, the surface roughness of the large surface of the crystal piece can also be measured, and the crystal piece with a surface roughness of no more than 0.1 μm on the large surface is selected as a qualified crystal piece, and the qualified crystal piece is subjected to subsequent processing steps (for example, step S4).

[0242] S4. Glue multiple qualified crystal sheets together, aligning their end faces to form a bonded block. The number of qualified crystal sheets should be no less than five, and the larger surfaces should be bonded with a protective medium. A bonded block refers to a block-shaped crystal formed by stacking and bonding multiple qualified crystal sheets along their thickness.

[0243] S5. Grind and polish the end faces of the bonded block. When the surface roughness of the end faces of the bonded block is less than 0.04 μm, a first intermediate product is obtained, and the process proceeds to the subsequent step (e.g., step S6). The end faces of the bonded block refer to the planes at both ends of the bonded block along its length.

[0244] S6. Adhere a protective glass to the end surface of the first intermediate product to obtain a second intermediate product.

[0245] S7: Cut the second intermediate product along its length to obtain a third intermediate product. The third intermediate product includes a plurality of crystal bars stacked and bonded together along their thickness or length.

[0246] S8. After the thickness of the third intermediate product meets the thickness requirement, the cut surface is ground to obtain a fourth intermediate product. For more information on the thickness requirement, please refer to the relevant description above.

[0247] S9. Performing gelling treatment on the fourth intermediate product to obtain a plurality of crystal strips as initial crystals.

[0248] In some embodiments, the initial crystals processed through steps S1 to S9 can be used to assemble a crystal array. For example, multiple initial crystals with similar light output can be selected from a large number of initial crystals processed through steps S1 to S9 to assemble the same crystal array.

[0249] In other embodiments, the initial crystal processed through steps S1 to S9 may be further processed to adjust its light output by changing its surface roughness, and multiple further processed initial crystals may be assembled into a crystal array. For more details on this embodiment, please refer to the relevant description later in this specification.

[0250] FIG. 7 is a schematic diagram of an initial crystal according to some embodiments of the present specification.

[0251] In some embodiments, as shown in FIG7 , the outer surface of the initial crystal 700 includes a first end face P1 and a second end face P2 that are opposite to each other, and a side surface between the first end face P1 and the second end face P2 , and at least one of the first end face P1 and the second end face P2 is a light emitting surface.

[0252] An end face refers to the light-emitting surface of a crystal or the surface opposite the light-emitting surface. For example, in the crystal bar shown in Figure 7, the end faces of the crystal bar can be the planes at either end along its length. The length direction can be the axial direction of the crystal bar or the largest of three orthogonal directions. For example, as shown in Figure 7, the z-direction is the axial direction of the initial crystal or the largest of three orthogonal directions.

[0253] The light-emitting surface refers to the plane from which the photons in the initial crystal are mainly emitted.

[0254] The initial light output value refers to the light output performance of the initial crystal before the initial crystal is subjected to processing operations related to light output regulation. For more information on "processing operations related to light output regulation", please refer to step 640 and its related description.

[0255] In some embodiments, the initial light output value of the initial crystal can be measured according to measurement methods in relevant industry standards. For example, in conjunction with the "GAGG Crystal and Wafer Array Performance Measurement Method," the full absorption peak method and the Compton edge method can be used for measurement. The measurement principle is: when monoenergetic gamma radiation is incident on a scintillation detector, the distribution of its output pulse amplitude is mainly composed of spectral segments such as the Compton distribution and the full absorption peak (except for scintillators with low atomic numbers). The full absorption peak method and the Compton edge method use the full absorption peak or the Compton distribution edge amplitude as the metric for determining the scintillator light output, respectively.

[0256] Step 620: Determine the target light output value of the initial crystal.

[0257] The target light output value refers to the light output value that the initial crystal is expected to achieve after the initial crystal is processed for light output regulation.

[0258] The target light output value can be determined in a variety of ways. In some embodiments, the target light output value can be determined based on prior knowledge or by manual input. For example, the target light output value can be set and input manually based on actual production needs. In some embodiments, the light output value of a crystal can be measured by the full-energy peak area corresponding to the channel data of the crystal. When high-energy particles such as X-rays (or gamma rays) interact with a crystal, the high-energy particles deposit energy in the crystal, and the atoms of the crystal enter an excited state, emitting fluorescent photons when de-excited. Fluorescent photons are converted into photoelectrons by photoelectric devices (such as fluorescent photons at the PMT photocathode produce a photoelectric effect and are converted into photoelectrons), and then amplified and digital-to-analog converted by photoelectric devices to form a pulse signal. Among them, the channel is obtained by the analyzer converting the pulse signal into a digital number corresponding to its amplitude.

[0259] In some embodiments, the target light output value of the initial crystal can be determined based on relevant parameters of the crystal array it constitutes. For more details about this embodiment, please refer to the relevant description later in this specification.

[0260] Step 630 : Determine a light adjustment scheme for the initial crystal based on the initial light output value and the target light output value.

[0261] The light adjustment scheme is a scheme for adjusting the light output value of the initial crystal from the initial light output value to the target light output value.

[0262] Since the light output value of the crystal is related to the crystal surface roughness, the light adjustment scheme may include a target surface roughness of at least one outer surface of the initial crystal. The target surface roughness may be a surface roughness that enables the actual light output value of the initial crystal to reach the target light output value.

[0263] In some embodiments, the initial light output value and the target light output value of the initial crystal can be analyzed and processed to determine a target surface roughness of at least one outer surface of the initial crystal. For example, the initial light output value and the target light output value of the initial crystal can be analyzed and processed according to a preset relationship table to determine the target surface roughness of at least one outer surface of the initial crystal. The light output value of the crystal is positively correlated with the crystal surface roughness. Therefore, in some embodiments, when the target light output value is greater than the initial light output value, it can be determined that the light adjustment scheme includes performing processing to increase the surface roughness of one or more side surfaces of the initial crystal; when the target light output value is less than the initial light output value, it can be determined that the light adjustment scheme includes performing processing to reduce the surface roughness of one or more side surfaces of the initial crystal.

[0264] The outer surface of the initial crystal may include side faces and end faces. Accordingly, the light adjustment scheme may include machining the surface roughness of each side face of the initial crystal to the target surface roughness of the side face. In some embodiments, the target surface roughness of one or more side faces of the initial crystal may be determined based on the initial light output value and the target light output value.

[0265] In some embodiments, a target surface roughness for each side of the initial crystal may be determined based on one or more of the target light output value of the initial crystal, the initial light output value of the initial crystal, the size of the initial crystal, the composition of the initial crystal, and the initial surface roughness of each side of the initial crystal. Each side of the initial crystal may be processed to the target surface roughness so that the actual light output value of the initial crystal is changed from the initial light output value to the target light output value. The initial surface roughness and the target surface roughness of different sides of the initial crystal may be the same or different.

[0266] Initial surface roughness refers to the surface roughness of the side of the initial crystal before the processing operation to control the light output of the initial crystal is performed. Initial surface roughness can be measured using a roughness tester, profilometer, laser interferometer, etc.

[0267] In some embodiments, the target surface roughness of the side can be determined in a variety of ways. For example, the target surface roughness of each side of the initial crystal can be determined by querying a preset table based on one or more of the target light output value of the initial crystal, the initial light output value of the initial crystal, the size of the initial crystal, the composition of the initial crystal, and the initial surface roughness of each side of the initial crystal. In some embodiments, the preset table includes a correspondence between the target light output value, initial light output value, size, composition, and combination of the initial surface roughness of multiple sides of a reference crystal and the reference surface roughness corresponding to the multiple sides. Among them, the reference crystal can be a type of crystal with consistent composition and size. In some embodiments, the preset table may include a correspondence between the target light output value, initial light output value, size, composition, and combination of the initial surface roughness of multiple sides of a plurality of reference crystals and the reference surface roughness corresponding to the multiple sides of the reference crystal. In some embodiments, the preset table can be pre-set based on historical data or prior knowledge.

[0268] In some embodiments, the target light output value of the initial crystal, the initial light output value of the initial crystal, the size of the initial crystal, the composition of the initial crystal, and the initial surface roughness of each side of the initial crystal can also be processed by a roughness determination model to determine the target surface roughness of each side of the initial crystal.

[0269] In some embodiments, the roughness determination model may be a machine learning model. In some embodiments, the roughness determination model may include any one or a combination of various feasible models, such as a recurrent neural network (RNN) model, a deep neural network (DNN) model, or a convolutional neural network (CNN) model.

[0270] In some embodiments, the roughness determination model can be trained using various methods based on multiple second training samples with second labels to update model parameters. For example, training can be performed using a gradient descent method. As an example, multiple second training samples with second labels can be input into the initial roughness determination model. A loss function can be constructed using the second labels and the output of the initial roughness determination model. The parameters of the initial roughness determination model are iteratively updated based on the loss function. Model training is completed when the loss function of the initial roughness determination model meets preset conditions, resulting in a trained roughness determination model. The preset conditions may include convergence of the loss function, a threshold number of iterations, and the like.

[0271] In some embodiments, the second training sample may include the target light output value of the sample initial crystal, the initial light output value of the sample initial crystal, the size of the sample initial crystal, the composition of the sample initial crystal, and the initial surface roughness of each side of the sample initial crystal. The second label corresponding to the second training sample may include the target surface roughness of each side of the sample initial crystal. In some embodiments, the second training sample can be obtained based on historical data. The second label corresponding to the second training sample can be obtained by manual annotation. In some embodiments, the second training sample and its corresponding second label can be determined based on historical data of light output regulation of different historical initial crystals. For example, the target light output value of the historical initial crystal, the initial light output value of the historical initial crystal, the size of the historical initial crystal, the composition of the historical initial crystal, and the initial surface roughness of each side of the historical initial crystal in the historical data can be used as the second training sample, and the target surface roughness of each side of the historical initial crystal in the historical data can be used as the second label corresponding to the second training sample.

[0272] By using the roughness determination model to determine the target surface roughness of each side of the initial crystal, the self-learning ability of the machine learning model can be used to find patterns from a large amount of historical data, obtain the correlation between the data, and improve the accuracy and efficiency of determining the target surface roughness of each side of the initial crystal.

[0273] Step 640, based on the light adjustment scheme, at least one outer surface of the initial crystal is processed to change the surface roughness, so that the actual light output value of the initial crystal is changed from the initial light output value to the target light output value, and the surface roughness Ra of the at least one outer surface after the surface roughness is changed is in the range of 0.001μm-10μm.

[0274] In some embodiments, the machining operation for changing the surface roughness may include a grinding operation and / or a polishing operation. For more information on the grinding operation and the polishing operation, see step 610 and its related description.

[0275] In some embodiments, based on the light adjustment scheme, one or more side surfaces, the first end surface and / or the second end surface of the initial crystal can be processed to change the surface roughness, so that the surface roughness of each side surface in the processed initial crystal is within the range of 0.01μm-10μm. In some embodiments, the surface roughness Ra of at least one outer surface after the surface roughness is changed is within the range of 0.001μm-0.1μm, that is, based on the light adjustment scheme, one or more side surfaces, the first end surface and / or the second end surface of the initial crystal are processed to change the surface roughness, so that the surface roughness of each side surface in the processed initial crystal is within the range of 0.01μm-0.1μm. When the surface roughness of any side surface of the processed initial crystal exceeds the range of 0.01μm-0.1μm, the influence of the surface roughness of the crystal on the propagation of photons inside the crystal can be effectively reduced, thereby ensuring the quality of the initial crystal. Preferably, the surface roughness of each side of the processed initial crystal can be made within one of the ranges of 0.01μm-0.09μm, 0.01μm-0.08μm, 0.01μm-0.07μm, 0.01μm-0.06μm, 0.01μm-0.05μm, 0.01μm-0.04μm, etc., to further ensure the quality of the initial crystal.

[0276] In some embodiments, based on the light adjustment scheme, one or more side surfaces, the first end surface and / or the second end surface of the initial crystal can be processed to change the surface roughness so that the surface roughness of each side surface in the processed initial crystal is within the range of 0.01 μm-1.5 μm.

[0277] When the surface roughness of any side of the processed initial crystal exceeds 0.01μm-1.5μm, the effect of surface roughness on photon propagation within the initial crystal is minimal, rendering it meaningless to adjust the surface roughness to control light output. In some embodiments of this specification, by limiting the surface roughness of the side of the processed initial crystal, it is possible to avoid significant effects on photon propagation within the initial crystal caused by excessive or insufficient surface roughness, thereby ensuring the quality of the initial crystal.

[0278] In some embodiments, the actual light output value of the initial crystal can be regulated by performing a grinding and / or polishing operation on one or more side surfaces of the initial surface. In some embodiments, the actual light output value of the initial crystal can be monitored during the grinding and / or polishing operation, and the grinding and / or polishing operation can be stopped when the actual light output value of the initial crystal reaches a target light output value. For example, the actual light output value of the initial crystal can be monitored after each grinding or polishing cycle; if the actual light output value of the initial crystal does not reach the target light output value, the grinding and / or polishing operation can be continued; and when the actual light output value of the initial crystal reaches the target light output value, the grinding and / or polishing operation can be stopped.

[0279] In some embodiments, when the light adjustment scheme includes increasing the surface roughness of at least one outer surface of the initial crystal, the processing operation of increasing the surface roughness may include: changing the morphology of the side surface of the initial crystal through mechanical processing methods such as grinding and polishing, thereby increasing the surface roughness of the side surface.

[0280] In some embodiments, when the light adjustment scheme includes reducing the surface roughness of at least one outer surface of the initial crystal, the machining operation to reduce the surface roughness may include reducing the surface roughness of the side surface by ultra-precision cutting, low-roughness grinding, honing, superfinishing, etc. The abrasive or grinding head abrasive used may have a particle size of 0.1 μm to 800 μm.

[0281] The above-mentioned method of increasing or decreasing the surface roughness can be performed in any feasible manner and is not limited here.

[0282] In some embodiments, based on the light adjustment scheme, the surface roughness of one or more sides of the initial crystal can be adjusted through the aforementioned surface roughness-changing processing operation so that the surface roughness of one or more sides of the initial crystal reaches the corresponding target surface roughness.

[0283] In some embodiments, the actual surface roughness of each side of the initial crystal can be measured and recorded during the processing. When the actual surface roughness reaches the target surface roughness, the processing is completed to obtain the processed initial crystal.

[0284] In some embodiments of the present specification, the target surface roughness of each side of the initial crystal is calculated, and the actual surface roughness of each side of the initial crystal is made to reach the target surface roughness through processing, so that the actual light output value of the processed initial crystal is closer to the target light output value.

[0285] In some embodiments of this specification, by processing the side of the initial crystal to change the surface roughness, the light output of the crystal can be effectively controlled, the reflection path of the photons can be increased, the purpose of increasing or decreasing the light output can be achieved, and the light output at different positions of the same crystal can be made uniform.

[0286] Scintillator crystals can be used to connect individual small crystal bars into large arrays and combine them with photomultiplier tubes to form scintillator detectors. Scintillator detectors are widely used in nuclear medicine (positron emission tomography (PET) scanning), X-ray security inspections, nuclear radiation detection, high-energy physics, space physics, environmental monitoring, geological exploration, and other related fields.

[0287] When the performance of the multiple crystal bars that make up a crystal array differs, or when the processing of the multiple crystals differs, the light output of the multiple crystal bars will be inconsistent, reducing the consistency of the crystal array's light output. Light output consistency of a crystal array is one of the most important performance indicators of a crystal array and directly affects the overall performance of the crystal array. However, light output consistency of a crystal array is affected by a variety of factors, including the processing quality of the crystals, internal defects and impurities, and the optical properties of the crystals. Ensuring consistent light output from each crystal bar in the array depends not only on the performance of the crystal bars themselves, but also on the crystal bar assembly, the crystal bar assembly coupling method, the reflective medium between the crystal bars, the peripheral packaging, light output, silicon wafer coupling, and the coupling of the photomultiplier tubes.

[0288] One or more embodiments of this specification also disclose a crystal assembly method that improves the uniformity of light output, energy resolution, and decay time of individual crystals in an array, thereby ensuring the superior performance of the resulting crystal array. For a detailed description of the crystal assembly method, see Figure 8 and its related description.

[0289] FIG. 8 is an exemplary flow chart of yet another crystal assembly method according to some embodiments of the present specification.

[0290] In some embodiments, one or more steps of process 800 may be performed by an operator, or by crystal production and processing equipment (e.g., a grinder, a polisher, etc.), crystal performance inspection equipment, etc. As shown in FIG8 , process 800 includes the following steps.

[0291] Step 810: Acquire multiple target crystals.

[0292] The target crystal refers to a crystal material that has undergone a processing that can change the surface roughness and can be used to assemble a crystal array. For example, the target crystal can be a crystal obtained by subjecting the initial crystal described above or below to a processing that can change the surface roughness. For more information on the processing that changes the surface roughness, see step 640 and the related description.

[0293] It should be noted that since the target crystal used to form the crystal array is obtained by processing the initial crystal to change the surface roughness, the crystal type and elemental composition of the target crystal can be the same as those of the initial crystal.

[0294] In some embodiments, the ratio of the content of the trivalent Ce element to the tetravalent Ce element in at least two of the multiple target crystals used to form the crystal array is different. That is, at least two target crystals containing different ratios of the trivalent Ce element and the tetravalent Ce element can form a crystal array. It should be noted that when the content ratio of the trivalent Ce element to the tetravalent Ce element in at least two target crystals is different, in order to ensure that the light output of each target crystal in the crystal array is close (for example, the difference in light output value is within the range of (-10%, +10%), etc.), the surface roughness of at least one group of corresponding side surfaces of the at least two target crystals is different. Among them, a group of corresponding side surfaces refers to the surfaces facing the same side in the two target crystals. For more explanation on the content of the trivalent Ce element and the tetravalent Ce element, please refer to Figure 6 and its related description.

[0295] In some embodiments, the difference in surface roughness Ra between any two side surfaces of any target crystal among the plurality of target crystals constituting the crystal array is less than 0.15 μm.

[0296] In some embodiments, the difference in surface roughness Ra between any two side surfaces of any target crystal in the plurality of target crystals forming the crystal array may be less than one of 0.99 μm, 0.89 μm, 0.59 μm, 0.25 μm, 0.1 μm, 0.09 μm, 0.08 μm, 0.07 μm, 0.06 μm, 0.05 μm, 0.04 μm, 0.03 μm, 0.02 μm, 0.01 μm, 0.008 μm, 0.005 μm, 0.001 μm, etc. For more information about the side surfaces, see FIG6 and its related description.

[0297] In some embodiments, the surface roughness Ra of the light output surface of any target crystal used to form the crystal array can be less than 0.04 μm. In some embodiments, the surface roughness Ra of the light output surface of any target crystal used to form the crystal array can also be less than one of 0.05 μm, 0.06 μm, 0.07 μm, 0.08 μm, 0.03 μm, 0.02 μm, 0.01 μm, etc.

[0298] In some embodiments, the surface roughness Ra of any side surface of any target crystal in the plurality of target crystals constituting the crystal array may be between 0.01 μm and 1.5 μm. In some embodiments, the surface roughness Ra of any side surface of any target crystal in the plurality of target crystals constituting the crystal array may also be within one of the ranges of 0.01 μm to 1.4 μm, 0.01 μm to 1.3 μm, 0.01 μm to 1.2 μm, 0.01 μm to 1.1 μm, 0.01 μm to 1.0 μm, 0.01 μm to 0.9 μm, 0.01 μm to 0.8 μm, 0.01 μm to 0.7 μm, 0.01 μm to 0.6 μm, etc.

[0299] In some embodiments of the present specification, the overall light output performance of the crystal array is improved by controlling the surface roughness Ra of any two side surfaces of any target crystal among the multiple target crystals used to form the crystal array, and controlling the difference in the surface roughness Ra of any two side surfaces of any target crystal among the multiple target crystals used to form the crystal array to meet certain requirements (for example, the difference is less than 0.05 μm).

[0300] In some embodiments, the difference between the target light output values ​​corresponding to any two of the multiple initial crystals used to form the crystal array is less than 10% of the target light output value of any one of the two initial crystals. For more information on the target light output value, please refer to Figure 6 and its related description. It should be noted that when the initial crystal is processed to change the surface roughness, the goal is to make the actual light output value of the initial crystal reach the target light output value of the initial crystal. Therefore, when the initial crystal reaches the target light output value after the processing to change the surface roughness, the initial crystal that has reached the target light output value can be called the target crystal. In other words, the target light output value of the initial crystal is equal to the actual light output value of the target crystal.

[0301] In some embodiments, the difference between the target light output values ​​corresponding to any two of the plurality of initial crystals used to form the crystal array may be less than one of 9%, 8%, 7%, 6%, 5%, 4%, 3%, 2%, 1%, etc., of the target light output value of any one of the two initial crystals. In some embodiments, the difference between the target light output values ​​corresponding to any two of the plurality of initial crystals used to form the crystal array may be less than one of 15%, 14%, 13%, 12%, 11%, etc., of the target light output value of any one of the two initial crystals.

[0302] In some embodiments of the present specification, by limiting the difference in target light output values ​​corresponding to any two initial crystals to be less than a certain ratio of the target light output value of any one of the two initial crystals, the difference in target light output values ​​of multiple initial crystals constituting the same crystal array can be reduced, so that the light outputs of the multiple target crystals constituting the crystal array are close, thereby improving the light output consistency of the crystal array.

[0303] In some embodiments, multiple target crystals can be obtained by processing multiple initial crystals. As shown in FIG9 , the following describes a method for processing multiple target crystals for assembling a crystal array, using steps 811 to 814. FIG9 is an exemplary flow chart of a method for obtaining multiple target crystals for assembling a crystal array, according to some embodiments of this specification.

[0304] Step 811: Acquire multiple initial crystals.

[0305] In some embodiments, in order to obtain multiple initial crystals that can be assembled into the same crystal array, a plurality of appropriate initial crystals can be selected from a large number of initial crystals. In some embodiments, the selection criteria may include: the difference in initial light output values ​​between any two initial crystals in the plurality of initial crystals is less than 10% of the initial light output value of any one of the two initial crystals. In other embodiments, the selection criteria may include: the difference in initial light output values ​​between any two initial crystals in the plurality of initial crystals is less than one of 15%, 14%, 13%, 12%, 11%, 9%, 8%, 7%, 6%, 5%, 4%, 3%, 2%, 1%, etc., of the initial light output value of any one of the two initial crystals.

[0306] In other embodiments, the selection criteria may include selecting a plurality of initial crystals whose dimensions meet dimension requirements. In some embodiments, the dimension requirements may include: the initial crystal dimensions range from 0.2 mm to 6 mm in length, 0.2 mm to 6 mm in width, and 3 mm to 100 mm in height. In some embodiments, the dimension requirements may further include: the height difference between any two of the plurality of initial crystals is between 3 mm and 60 mm.

[0307] Step 812: Determine an initial light output value of each initial crystal in the plurality of initial crystals.

[0308] For an illustration of the initial light output value of the initial crystal, see FIG6 and its related description.

[0309] Step 813 : determining a target light output value corresponding to each initial crystal based on the initial light output value of each initial crystal.

[0310] In some embodiments, the target light output values ​​of the multiple initial crystals used to assemble into the same crystal array may be the same. For example, the target light output values ​​of the multiple initial crystals used to assemble into the same crystal array may be set to a set target value.

[0311] In some embodiments, the set target value may be one of the median, mean, mode, etc. of initial light output values ​​of a plurality of initial crystals used to assemble into the same crystal array.

[0312] In some embodiments, the set target value can be determined based on relevant parameters of the crystal array. In some embodiments, the relevant parameters of the crystal array can include the girth of the crystal array. In some embodiments, a correspondence between different crystal array girths and different reference light output values ​​can be pre-set based on historical data or prior knowledge. When it is determined that a crystal array of a specific girth needs to be constructed using multiple initial crystals, the reference light output value corresponding to the crystal array of the specific girth can be determined based on the aforementioned correspondence, and this parameter light output value can be determined as the set target value.

[0313] In some embodiments, the target value may also be set manually based on actual production needs.

[0314] In some embodiments, the target light output values ​​of the multiple initial crystals used to assemble into the same crystal array may also be different.

[0315] In some embodiments, a statistical analysis can be performed based on the multiple initial light output values ​​of multiple initial crystals used to assemble the same crystal array. For example, a normal distribution plot can be constructed using the mean of the multiple initial light output values ​​corresponding to the multiple initial crystals as the expected μ, with three standard deviations (i.e., 3σ, where σ is the standard deviation of the multiple initial light output values ​​corresponding to the multiple initial crystals) as the standard. A preset interval (μ-3σ, μ+3σ) is constructed with the expected value μ as the midpoint of the interval. This preset interval allows a certain proportion (e.g., 95%) of the initial light output values ​​to fall within it. Furthermore, the target light output values ​​of the initial crystals whose initial light output values ​​fall within the preset interval (μ-3σ, μ+3σ) can be determined to be equal to the respective initial light output values. Initial crystals whose initial light output values ​​fall within the preset interval (μ-3σ, μ+3σ) can be referred to as reference crystals. Furthermore, the target light output values ​​of the initial crystals whose initial light output values ​​fall outside the preset interval (μ-3σ, μ+3σ) can be determined to be equal to one of the median, mean, mode, etc., of the initial light output values ​​of one or more reference crystals.

[0316] In some embodiments, a target light output value for each of the multiple initial crystals used to assemble the same crystal array can be determined based on considerations of reducing processing time. For example, an initial crystal for which the difference in initial light output values ​​corresponding to any two of the multiple initial crystals is no less than 10% of the initial light output value of either of the two initial crystals can be determined as the initial crystal to be processed. The actual light output value of this portion of the initial crystals to be processed can then be adjusted so that the difference in initial light output values ​​corresponding to any two of the processed initial crystals is less than 10% of the initial light output value of either of the two initial crystals to be processed.

[0317] In step 814, based on the initial light output value and the target light output value, one or more side surfaces of one or more initial crystals among the multiple initial crystals are processed to change the surface roughness so that the actual light output value of each initial crystal is changed from the initial light output value to the corresponding target light output value, thereby obtaining multiple target crystals.

[0318] In some embodiments, in order to improve the light output consistency of the crystal array, the surface roughness of multiple initial crystals used to assemble into the same crystal array can be changed by processing so that the actual light output value of the multiple initial crystals used to assemble into the same crystal array reaches the target light output value.

[0319] For an illustration of processing to change the surface roughness, see FIG. 6 and its related description.

[0320] In some embodiments, when processing multiple initial crystals used to assemble into the same crystal array to change the surface roughness, it is necessary to ensure that the verticality deviation between any two side surfaces of any target crystal among the multiple target crystals used to compose the crystal array is no more than 1 degree.

[0321] In some embodiments, when processing multiple initial crystals used to assemble into the same crystal array to change the surface roughness, it is necessary to ensure that the light output surface of any one of the multiple target crystals obtained by processing to form the crystal array can be covered with concave and convex points with an average height of no more than 0.03 μm, and other surfaces (for example, at least one side) can be covered with concave and convex points with an average height of no more than 1 μm.

[0322] Step 820 , arranging a plurality of target crystals in an array to form a crystal array.

[0323] A crystal array is an array composed of multiple target crystals.

[0324] As shown in Figure 10, the target crystals c11, c12, c13, c14, c21, c22, c23, c24, c31, c32, c33, c34, c41, c42, c43, and c44 can form a crystal array [(c11, c12, c13, c14), (c21, c22, c23, c24), (c31, c32, c33, c34), (c41, c42, c43, c44)].

[0325] In some embodiments, at least one group of target crystals in the crystal array is coupled via air, wherein a group of target crystals includes two target crystals. In some embodiments, at least one group of target crystals in the crystal array is coupled via a reflective film. In some embodiments, at least one group of target crystals in the crystal array is coupled via a reflective filler. In some embodiments, multiple target crystals in the crystal array can be coupled using one or more of the above coupling methods. For more information about reflective films, please refer to the relevant description above in this specification.

[0326] In some embodiments, when at least one group of target crystals is coupled together, a filler may be placed between some or all of the target crystals to separate them. The filler may include, but is not limited to, polytetrafluoroethylene (PTFE), enhanced specular reflector (ESR), E60, Teflon, barium compounds, titanium compounds, magnesium compounds, and the like.

[0327] In some embodiments, multiple target crystals can be partitioned and assembled to obtain multiple crystal combinations. Each crystal combination can be bonded and assembled into a crystal array according to its arrangement position. For more information on partitioning, arranging, and bonding multiple target crystals, please refer to the relevant description above in this specification.

[0328] In some embodiments of the present specification, target crystals are partitioned and arranged according to their performance (e.g., light output performance, decay time, energy resolution and / or channel). Target crystals with similar light output performance, decay time and / or energy resolution and small channel difference can be divided into a crystal combination for subsequent assembly of a crystal array, effectively ensuring the performance similarity of each crystal in the crystal array and improving the array qualification rate.

[0329] Some embodiments of the present specification also disclose a crystal light output control system, comprising a controller and a processing device, wherein the controller is configured to: obtain an initial light output value of an initial crystal; wherein the outer surface of the initial crystal includes a first end face and a second end face disposed opposite each other, and a side face located between the first end face and the second end face; at least one of the first end face and the second end face is a light-emitting surface; determine a target light output value of the initial crystal; and wherein the processing device is configured to: based on the initial light output value and the target light output value, perform surface roughness modification on one or more side faces, the first end face and / or the second end face of the initial crystal, so that the actual light output value of the initial crystal changes from the initial light output value to the target light output value, wherein the surface roughness Ra of at least one outer surface of the initial crystal after the surface roughness modification is modified is within a range of 0.001 μm to 10 μm. In some embodiments, the surface roughness Ra of at least one outer surface of the initial crystal after the surface roughness modification is modified is within a range of 0.001 μm to 0.1 μm. In some embodiments, the initial crystal is a scintillation crystal, and the initial crystal includes at least two of Lu, Si, Y, Ca, Mg, Al, Ga, Sc, In, La, Br, Ba, S, Sn, Zn, Zr, Hf, Cd, Pb, Eu, Ce, Bi, Ge, I, Na, Cs, and Cu. For more details, see the relevant description above.

[0330] Some embodiments of this specification also disclose a crystal array.

[0331] In some embodiments, a crystal array can be assembled using the crystal assembly method described in any of the preceding embodiments. Because the crystal assembly method described in any of the preceding embodiments can regulate the light output of multiple initial crystals used to assemble the crystal array, the light output values ​​of any two target crystals in the crystal array assembled using the crystal assembly method described in any of the preceding embodiments are close, resulting in good light output consistency among the individual crystals in the crystal array and excellent light output performance of the crystal array as a whole.

[0332] In some embodiments, the target crystal in the crystal array contains a trivalent Ce element (i.e., Ce 3+ ) and tetravalent Ce elements (i.e. Ce 4+ ), at least two target crystals in the crystal array have different ratios of trivalent Ce to tetravalent Ce, and at least one set of corresponding side surfaces of the two target crystals have different surface roughnesses. For more information on trivalent Ce and tetravalent Ce, see FIG6 and its related description.

[0333] Factors that affect light output include element content ratio and surface roughness. When the element content ratios of two target crystals are different (for example, Ce 3+ and Ce 4+ When the content ratio of the two target crystals is different, in order to ensure close light output, the surface roughness of at least one group of corresponding side surfaces of the two target crystals is also different.

[0334] The inventors found that a certain proportion of Ce could be doped into the crystal when preparing it. 3+ and Ce 4+ , and by adjusting Ce 3+ and Ce 4+ The content ratio of Ce can effectively control the light output value of a single crystal. However, due to the differences in the preparation process of different crystals, for example, the preparation formula, growth method and growth equipment of different crystals are different, so when preparing different crystals, the Ce doping 3+ and Ce 4+ In some embodiments, arrays can be assembled from crystals cut from original crystals produced using similar preparation recipes, growth methods, and growth equipment. This ensures that the light output of each crystal making up the array is similar, thereby improving the consistency of the light output of the array. However, this array assembly method places significant restrictions on the crystals that can be used.

[0335] Furthermore, after the inventors discovered that the light output value of the crystal is also related to factors such as the surface roughness of the crystal, the surface roughness of the side surface and / or the surface opposite to the light output surface of a single crystal can be adjusted to increase or decrease the reflection path of the photons, thereby achieving the purpose of increasing or decreasing the light output, so that the light output consistency of each crystal in the crystal array is better and the overall light output performance of the crystal array is better.

[0336] In some embodiments, the relevant information of the initial crystal includes identification results of one or more initial crystals. Accordingly, determining the processing scheme based on the relevant information of the initial crystal may include: determining the processing scheme of the one or more initial crystals based on the identification results.

[0337] The following description will describe the relevant content of the processing scheme for determining one or more initial crystals.

[0338] FIG11 is an exemplary flow chart of another crystal processing method according to some embodiments of this specification. In some embodiments, process 1100 can be performed by a crystal processing system or device, or by a processor of the crystal processing system or device, or by other means. For ease of explanation, the remainder of this specification will use a crystal processing device executing process 1100 as an example. As shown in FIG11 , process 1100 includes the following steps.

[0339] Step 1110 : Acquire an image to be identified related to one or more initial crystals.

[0340] The image to be recognized may refer to an image containing one or more initial crystals.

[0341] It is understandable that the content of the image to be identified may be different depending on the purpose of the crystal processing device's identification. For example, the image to be identified may include an image of a tray containing multiple initial crystals. The crystal processing device may identify the aforementioned image to be identified, thereby determining the size data and first position data on the tray, thereby determining whether the aforementioned multiple initial crystals can be assembled in the next step and whether they need to be adjusted through the first adjustment plan. For another example, the image to be identified may include an image of an initial crystal. The crystal processing device may identify the aforementioned image to be identified, thereby determining the size data and first defect data of the initial crystal, thereby determining the cutting plan for cutting the initial crystal. For another example, the image to be identified may also include an image of a crystal array composed of multiple crystal units. The crystal processing device may identify the aforementioned image to be identified, thereby determining the second position data, second defect data, and third defect data of the crystal array, thereby determining whether the aforementioned multiple crystal arrays meet the requirements and whether they need to be adjusted through the second adjustment plan.

[0342] In some embodiments, the image to be identified can be obtained in a variety of ways. For example, a user can control an image acquisition device to photograph one or more initial crystals and transmit the image to be identified to a crystal processing device via a user terminal. For another example, the crystal processing device can control an image acquisition device to photograph one or more initial crystals to obtain the image to be identified.

[0343] The image to be identified can be of various types. For example, when the image acquisition device is a visual image acquisition device (e.g., a camera), the image to be identified can be a visual image. For another example, when the image acquisition device is an X-ray machine, the image to be identified can also be an X-ray film. The image to be identified can be a two-dimensional image or a three-dimensional image. When the image to be identified is a three-dimensional image, it can be obtained by image fusion of one or more initial two-dimensional images of the crystal from different perspectives.

[0344] The number of images to be identified can be one or more. For example, the image capture device's shooting position and / or shooting angle can be adjusted to obtain multiple images to be identified of one or more initial crystals from different viewing angles. For another example, the placement of one or more initial crystals can be adjusted (e.g., rotated), and the image capture device can capture the adjusted one or more initial crystals to obtain images to be identified of the one or more initial crystals in different placements.

[0345] In some embodiments, one or more initial crystals can be illuminated by multiple light sources of different colors, and the image acquisition device can capture one or more initial crystals illuminated by light sources of different colors to obtain multiple images to be identified. The color of the aforementioned light source can be determined by preset, for example, preset to five colors. The color of the light source can be determined by the color of the initial crystal. For example, when the color of a certain initial crystal is yellow, it can be determined through a preset crystal-light source comparison table that the color irradiated on the initial crystal includes three colors. It is worth noting that the initial crystal has different absorption of different colors, so the shooting effect under different light sources is different. In some images to be identified, the features of the initial crystal (for example, size, defects, etc.) may be relatively more obvious. In addition, some defects appear differently under different light sources. For example, they are difficult to be captured under a certain light source, but can be clearly visible under another light source. Therefore, some embodiments of this specification improve the accuracy of crystal identification by capturing the images to be identified of the initial crystal under different color light sources and making a comprehensive judgment.

[0346] It is worth noting that many crystals (eg, silicon dioxide, fluorite, etc.) are transparent. When photographing transparent initial crystals, there may be problems with reflections and fusion with the background area.

[0347] In some embodiments, for each color of light source, the background color of the initial crystal in the image to be identified corresponding to that light source is the complementary color of the color corresponding to that light source. A transparent initial crystal may transmit light of the background color. By setting the background color and the light source color as complementary colors, the background color light and the light source can be additively mixed in the area corresponding to the initial crystal, making that area different from the colors in other areas. Based on the additive mixing principle of light, when two colors in opposite positions on the color wheel are added together, they can offset each other or produce a neutral effect, ultimately forming a visual white or gray tone, thereby emphasizing the initial crystal area and preventing the initial crystal from blending with the background area.

[0348] In some embodiments, for each initial crystal, the crystal processing device can determine the crystal color of the initial crystal. The crystal processing device can determine the crystal color of the initial crystal in various ways, such as user input or analyzing the initial crystal after photographing it.

[0349] In some embodiments, the crystal processing device can use the complementary color corresponding to the crystal color as a light source to illuminate the initial crystal and obtain an image to be identified corresponding to the initial crystal. For example, when a certain initial crystal (such as neodymium-doped yttrium aluminum garnet) is red, green can be selected as the light source to illuminate it and obtain an image to be identified. In some embodiments of the present specification, this setting can enhance the color saturation and contrast of the crystal in the image to be identified, improve the contrast effect between the initial crystal and the background area, highlight the crystal structure, avoid the fusion of the initial crystal and the background area in the image to be identified, and ensure accurate identification of the initial crystal.

[0350] In some embodiments, the background color of the initial crystal in the image to be identified can be a complementary color of the crystal color, thereby highlighting the crystal structure, avoiding the fusion of the initial crystal and the background area in the image to be identified, and ensuring accurate identification of the initial crystal.

[0351] In some embodiments, the crystal processing device can also fuse one or more crystal images of the initial crystal. The fused crystal image can fully display the initial crystal, and the aforementioned fused crystal image is determined as the image to be identified. For more information about the aforementioned embodiments, please refer to the relevant description later in this specification.

[0352] In some embodiments, the image to be identified may also include a QR code, which may be used to number one or more initial crystals in the image to be identified, so that the crystal processing device can distinguish and save the identification results of different initial crystals for subsequent inquiries.

[0353] In some embodiments, the image to be recognized may include one or more of a first image, a second image, and a third image. For more information about the first image, the second image, and the third image, please refer to the relevant description later in this specification.

[0354] Step 1120 , performing image recognition on the image to be recognized, and determining recognition results of one or more initial crystals, wherein the recognition results include at least one of size data, position data, and defect data of the one or more initial crystals.

[0355] The dimensional data may refer to data characterizing the size of the initial crystal, including but not limited to the diameter, shape, crystal axis size, thickness, and grain size of the initial crystal.

[0356] The position data may refer to data characterizing the initial crystal position. In some embodiments, the position data may include first position data. In some embodiments, the position data may include second position data. For more information about the first position data and the second position data, please refer to the relevant description below in this specification.

[0357] Defect data may refer to data characterizing one or more initial crystal defects. In some embodiments, the defect data may include first defect data. In some embodiments, the defect data may include second defect data and third defect data. For more information about the first defect data, the second defect data, and the third defect data, please refer to the relevant description below in this specification.

[0358] In some embodiments, the size data and defect data of the initial crystal can be obtained by testing with a crystal testing device. For more information about the crystal testing device, please refer to the relevant description below in this specification.

[0359] In some embodiments, the crystal processing device can perform image recognition on the image to be identified using a machine learning model (e.g., a size recognition model, a first position recognition model, a first defect recognition model, etc.) or other image recognition methods (e.g., template matching, feature extraction and matching, etc.) to determine the recognition results of one or more initial crystals. For more details about the aforementioned embodiments, please refer to the relevant description below in this specification.

[0360] In some embodiments, the crystal processing device may also determine the defect data (e.g., first defect data, second defect data, etc.) in one or more initial crystals based on the size data and weight data of the one or more initial crystals. For example, the crystal processing device may determine the density data of the initial crystal based on the weight data and size data of the initial crystal, and compare the density data with the density data of the corresponding type of initial crystal to determine the defect data of the aforementioned initial crystal. It is understandable that some initial crystals may contain other types of crystals, which are difficult to determine directly through image recognition. In some embodiments of this specification, the density data of the initial crystal can be determined through the weight data of the initial crystal and the size data determined by image recognition, thereby determining whether the initial crystal has defects, which can improve the accuracy of the recognition results.

[0361] In some embodiments, when the image to be identified includes images of one or more initial crystals under multiple light sources of different colors, the crystal processing device may perform image recognition on the images to be identified corresponding to the multiple light sources of different colors to determine multiple candidate identification results for the one or more initial crystals. The aforementioned candidate identification results may be identification results corresponding to the candidate initial crystals. Similar to the identification results, the candidate identification results may also include at least one of size data, position data, and defect data corresponding to the initial crystals.

[0362] In some embodiments, the crystal processing device can perform image recognition on the image to be recognized using a machine learning model or other image recognition method to determine candidate recognition results for one or more initial crystals. For more information on determining candidate recognition results, please refer to the relevant description of determining recognition results below in this specification.

[0363] In some embodiments, the candidate recognition result may further include a confidence level corresponding to the candidate recognition result. For example, when the crystal processing device processes the image to be recognized using a machine learning model, the output of the corresponding machine learning model may further include a confidence level.

[0364] In some embodiments, the crystal processing device may determine the recognition results of one or more initial crystals based on multiple candidate recognition results. For example, the crystal processing device may fuse multiple candidate recognition results to determine the recognition results of one or more initial crystals. For another example, when a feature (e.g., size) of the initial crystal includes multiple different candidate recognition results, the crystal processing device may determine the candidate recognition result with the highest confidence among the candidate recognition results as the recognition result for that feature.

[0365] Some embodiments of this specification utilize images to be identified under different light sources to comprehensively determine the initial crystal identification result, thereby ensuring the accuracy of the identification result. For example, a defect in the initial crystal may appear differently under different colors of light. Using images to be identified under different light sources can better identify the defect in the initial crystal.

[0366] Step 1130 : Determine a processing plan for one or more initial crystals based on the identification results.

[0367] In some embodiments, the processing solution may include a first adjustment solution for adjusting one or more initial crystals on the tray. For more information on how to determine the first adjustment solution based on the identification result, please refer to the relevant description later in this specification.

[0368] In some embodiments, the processing plan may further include a cutting plan for cutting one or more initial crystals. For more information on how to determine the cutting plan for the initial crystal based on the identification results, please refer to the relevant description later in this specification.

[0369] In some embodiments, the processing scheme may further include a second adjustment scheme for adjusting the crystal units and / or reflective structures in the crystal array composed of one or more initial crystals. For more information on how to determine the second adjustment scheme for the crystal array based on the identification results, please refer to the relevant description later in this specification.

[0370] Some embodiments of this specification can accurately determine the processing plan for the initial crystals by performing image recognition on one or more initial crystals, realize automated processing of the initial crystals, improve the efficiency of initial crystal processing, and reduce the production and processing costs of the initial crystals.

[0371] The crystals produced by the initial crystal growth equipment are of different sizes and shapes and may have defects, so they cannot be used directly. They need to be divided into crystal units of specified size, without defects or with fewer defects, so as to facilitate subsequent processing (for example, assembling into a crystal array and installing it in a scanning device). If the size and defects of the initial crystals are evaluated manually, on the one hand, the accuracy is not high, and on the other hand, the cost is high and the efficiency is low. Based on this, some embodiments of the present specification can determine the size data and the first defect data of the initial crystal by performing image recognition on the images to be identified of one or more initial crystals, thereby determining the cutting plan of the initial crystal, which can improve the accuracy of initial crystal identification, reduce costs, and improve processing efficiency.

[0372] FIG12 is an exemplary flowchart for determining a cutting plan for an initial crystal according to some embodiments of this specification. In some embodiments, process 1200 can be executed by a crystal processing system or device, or by a processor of the crystal processing system or device, or by other means. For ease of explanation, the remainder of this specification will use a crystal processing device executing process 1200 as an example. As shown in FIG12 , process 1200 may include the following steps.

[0373] Step 1210 : Perform image recognition on the image to be recognized to determine size data and first defect data of one or more initial crystals.

[0374] In some embodiments, the crystal processing device can perform image recognition on an image to be recognized using a size recognition model to determine the size data of one or more initial crystals. The crystal processing device can input the image to be recognized into the size recognition model, and the output of the size recognition model can be the size data of one or more initial crystals in the image to be recognized. The size recognition model can be a convolutional neural network or any other machine learning model capable of implementing this function, or a combination thereof.

[0375] The size recognition model can be trained using a third training sample with a third label. The third training sample can include a first sample image, and the third label can include sample size data corresponding to the first sample crystal in the first sample image. The third training sample can be determined by photographing the first sample crystal, and the third label can be determined by manually measuring the photographed first sample crystal.

[0376] In some embodiments, the output of the size recognition model may further include the confidence level of the size data. Correspondingly, when training the size recognition model, the third label may further include a first sample confidence level, which may be determined by manual annotation (e.g., annotated as 1). When the confidence level of the size data output by the size recognition model is greater than a preset first confidence threshold, the size data output by the size recognition model may be determined as the size data of the initial crystal; when the confidence level of the size data output by the size recognition model is less than or equal to the preset first confidence threshold, a new image to be identified may be obtained by adjusting the color of the light source or the shooting angle and position of the image acquisition device, and the new image to be identified may be processed by the size recognition model until the size data output by the size recognition model is greater than the first confidence threshold, thereby ensuring the accuracy of the size data in the recognition result.

[0377] The first defect data represents first defect data of defects of the initial crystal itself. For example, the first defect includes but is not limited to the location and size of defects such as point defects, line defects, surface defects, crystal lines, and inclusions of the initial crystal.

[0378] In some embodiments, the crystal processing device may perform image recognition on an image to be recognized using a first defect recognition model to determine first defect data for one or more initial crystals. The crystal processing device may input the image to be recognized into the first defect recognition model, and the output of the first defect recognition model may be the first defect data for one or more initial crystals in the image to be recognized. The first defect recognition model may be a convolutional neural network or any other machine learning model capable of implementing this function, or a combination thereof.

[0379] The first defect recognition model can be trained using a fourth training sample with a fourth label. The fourth training sample can include a second sample image, and the fourth label can include sample second defect data corresponding to the second sample crystal in the second sample image. The fourth training sample can be determined by photographing the second sample crystal, and the fourth label can be determined by manually observing and annotating the photographed second sample crystal.

[0380] In some embodiments, the output of the first defect recognition model may further include the confidence of the first defect data. Correspondingly, when training the first defect recognition model, the fourth label may further include the second sample confidence, and the second sample confidence may be determined through manual annotation. When the confidence of the first defect data output by the first defect recognition model is greater than a preset second confidence threshold, the first defect data output by the first defect recognition model may be determined as the first defect data of the initial crystal; when the confidence of the first defect data output by the first defect recognition model is less than or equal to the preset second confidence threshold, a new image to be recognized may be obtained by adjusting the color of the light source or the shooting angle and position of the image acquisition device, and the new image to be recognized may be processed by the first defect recognition model until the first defect data output by the first defect recognition model is greater than the second confidence threshold, thereby ensuring the accuracy of the first defect data in the recognition result.

[0381] Step 1220 , obtaining a first cutting target of one or more initial crystals.

[0382] The first cutting target may refer to a primary target for cutting one or more initial crystals. When cutting the initial crystals, first consideration should be given to satisfying the first cutting target.

[0383] In some embodiments, the first cutting target may include the size of one or more initial crystal units to be cut. In some embodiments, the size of the crystal unit may also be determined by a preset method. For example, the size of the crystal unit may be determined by an order requirement.

[0384] In some embodiments, the first cutting target may include a cutting priority, for example, crystal quantity priority or crystal quality priority.

[0385] In some embodiments, the first cutting target may include a specific number of cuts and / or cutting quality. For example, the first cutting target may include cutting 10 crystal units of a specified size. The aforementioned cutting quality may be related to the defects in the crystal unit after cutting. The fewer the defects in the crystal unit after cutting, the higher the cutting quality. The aforementioned cutting quality may be represented by a quality score, for example, 1 to 10 points. The higher the quality score, the higher the cutting quality. The aforementioned cutting quality may also be represented by a quality grade, for example, grades I to V. The higher the quality grade, the higher the cutting quality. Exemplarily, the first cutting target may include that the quality grade of the crystal unit after cutting is at least grade II.

[0386] In some embodiments, the first cutting target for one or more initial crystals can be obtained in a variety of ways. For example, the first cutting target for one or more initial crystals can be obtained through user input. In another example, the first cutting target can be determined using the size data and first defect data of one or more initial crystals and a preset correspondence table.

[0387] Step 1230 : For each initial crystal, determine a cutting plan for the initial crystal based on the size data, the first defect data, and the first cutting target of the initial crystal.

[0388] The cutting plan can be a specific plan for cutting the initial crystal. The cutting plan can include, but is not limited to, the number of cuts made on the crystal, the angle and depth of each cut, etc. The cutting machine can cut the initial crystal based on the cutting plan, and the crystal units obtained after cutting meet the first cutting target.

[0389] In some embodiments, for each initial crystal, the crystal processing device can perform modeling or adopt various data analysis algorithms, such as regression analysis, discriminant analysis, etc., to analyze and process the size data, first defect data and first cutting target of the initial crystal to obtain a cutting plan for the initial crystal.

[0390] In some embodiments, for each initial crystal, the crystal processing device obtains multiple candidate cutting plans based on the size data, first defect data, and first cutting target of the initial crystal, and screens the multiple candidate cutting plans to determine a cutting plan for the initial crystal. For more details on the aforementioned embodiments, please refer to the relevant description later in this specification.

[0391] Some embodiments of this specification can accurately determine crystal size data and first defect data by performing image recognition on one or more initial crystals, and determine a cutting plan for cutting the initial crystal in combination with the first cutting target. This can achieve automated processing of the initial crystals, improve the cutting accuracy and consistency of the initial crystals, reduce crystal loss, and reduce labor costs.

[0392] In some embodiments, for each order, the crystal processing device can determine the crystal delivery quantity corresponding to the order based on the order requirements and the cutting plans for each initial crystal. The order requirements may include the required crystal unit size and the required number of crystals. For example, the order requirement may include two hundred size A crystal units. The crystal processing device can determine the cutting plans for each initial crystal when the crystal unit size corresponding to the order requirements is met, thereby determining the number of crystal units for each initial crystal based on the cutting plans. Furthermore, the crystal delivery quantity for the order is determined based on the number of crystals in the order requirements and the number of crystal units for each initial crystal based on the cutting plans. It is understood that the crystal unit size required for each order may vary. If the number of initial crystals delivered is too small, the number of crystal units obtained will not meet the order requirements, resulting in repeated cutting operations and a cumbersome process. If the number of initial crystals delivered is too large, the number of crystal units obtained will exceed the order requirements, resulting in wasted crystals and increased costs. Some embodiments of the present disclosure can accurately determine the crystal delivery quantity for each order based on the order requirements and the cutting plans for each initial crystal, ensuring that the number of crystal units obtained after cutting meets the order requirements and avoiding problems caused by over- or under-delivery.

[0393] FIG13 is another exemplary flow chart for determining a cutting plan for an initial crystal according to some embodiments of this specification. In some embodiments, process 1300 can be executed by a crystal processing system or device, or by a processor of the crystal processing system or device, or by other means. For ease of explanation, the remainder of this specification will use a crystal processing device executing process 1300 as an example. As shown in FIG13 , process 1300 may include the following steps.

[0394] Step 1310 : Determine a plurality of candidate cutting plans based on the size data of the initial crystal, the first defect data, and the first cutting target.

[0395] A candidate cutting plan may refer to a plan for cutting the initial crystal to be evaluated. Similar to a cutting plan, a candidate cutting plan may include, but is not limited to, the number of cuts to be made on the crystal, the angle and depth of each cut, and the like. It is worth noting that each candidate cutting plan can achieve the first cutting target by cutting the initial crystal into units.

[0396] In some embodiments, multiple candidate cutting plans can be determined based on the initial crystal's size data, first defect data, and first cutting target using a variety of methods. For example, a user can generate multiple candidate cutting plans based on the initial crystal's size data, first defect data, and first cutting target, and the crystal processing device can obtain the candidate cutting plans input by the user. For another example, the crystal processing device can randomly generate multiple candidate cutting plans based on the initial crystal's size data, first defect data, and first cutting target.

[0397] For each candidate cutting plan, the crystal processing device may perform the following steps 1320 and 1330:

[0398] Step 1320 : Determine a unit score for each cut crystal unit based on the candidate cutting plan, the size data of the initial crystal, and the first defect data.

[0399] The crystal processing device can generate a three-dimensional model of the initial crystal based on the size data of the initial crystal and the first defect data, and then simulate cutting the three-dimensional model of the initial crystal based on the candidate cutting scheme through simulation cutting software to obtain multiple crystal units after cutting.

[0400] In some embodiments, for each cut crystal unit, the crystal processing device can analyze and process the crystal unit, and then determine the unit score of the crystal unit based on a preset score relationship table. The aforementioned unit score can be used to evaluate the quality of the crystal unit. The unit score can be represented by a score. For example, the unit score can be 0 to 100 points, and the higher the score, the better the corresponding crystal unit.

[0401] In some embodiments, the aforementioned unit score may be related to defects in the crystal unit. For example, the crystal processing device analyzes whether there are defects in the crystal unit and the specific size of the defects, and determines the unit score of the crystal unit through a preset score relationship table. In some embodiments, the aforementioned unit score may also be related to other parameter information in the crystal unit. For example, the crystal processing device may also determine the unit score of the crystal unit in combination with the size of the crystal unit. For another example, the crystal processing device may also determine the optical properties of each crystal unit, such as refractive index, transmittance, polarization, etc., through simulation analysis using optical simulation software (e.g., TracePro, CODE V, etc.), thereby determining the unit score of the crystal unit in combination with the optical properties of each of the aforementioned crystal units.

[0402] Step 1330 : Determine a plan score of the candidate cutting plan based on the unit scores of each crystal unit.

[0403] The solution score can be used to evaluate the quality of the candidate cutting solutions. For example, the solution score can be represented by a score, and a higher solution score indicates that the corresponding candidate cutting solution is better.

[0404] In some embodiments, the crystal processing device may sum the unit scores of the respective crystal units to determine the plan score of the candidate cutting plan.

[0405] In some embodiments, the crystal processing device can obtain a second cutting target for cutting the initial crystal. The aforementioned second cutting target may refer to a secondary target for cutting one or more initial crystals. The aforementioned second cutting target can be determined by user input. When cutting the initial crystal, on the premise of satisfying the first cutting target, further consideration can be given to satisfying the second cutting target. It is worth noting that, on the premise of satisfying the first cutting target, the candidate cutting scheme may or may not satisfy the second cutting target, but satisfying the candidate cutting scheme while satisfying both the first cutting target and the second cutting target is more in line with user expectations.

[0406] In some embodiments, the second cutting target may include a cutting priority. For example, the first cutting target may be to cut 10 crystal units of a specified size, and the second cutting target may be to prioritize the quality of the 10 crystal units of the specified size. For another example, the first cutting target may be to cut 10 crystal units of a specified size, and the second cutting target may be to prioritize the number of crystal units of the specified size.

[0407] In some embodiments, the crystal processing device may determine the quantity weight and quality weight of the crystal unit based on the second cutting target. For example, the crystal processing device may determine the quantity weight and quality weight of the crystal unit based on the cutting priority in the second cutting target using a preset weight relationship table. For example, when the crystal processing device prioritizes quality based on the cutting priority in the second cutting target, the preset weight relationship table may be used to determine that the quantity weight of the crystal unit is 0.3 and the quality weight is 0.7.

[0408] In some embodiments, the crystal processing device may determine the solution score of the candidate cutting solution based on the quantity weight, the quality weight, the number of crystal units, and the unit score. For example, the crystal processing device may determine the solution score based on the following formula: Among them, S is the solution score of the candidate cutting solution, w1 is the quantity weight, N is the number of crystal units, w2 is the quality weight, s i Assign a cell score to the i-th crystal cell.

[0409] In some embodiments of this specification, the second cutting target can further refine the user's requirements for initial crystal cutting to ensure that the crystal units obtained after cutting the initial crystal using the determined cutting plan better meet the user's needs and optimize the flexibility of initial crystal cutting.

[0410] In some embodiments, the crystal processing device may further determine the waste portion after the initial crystal cutting based on the candidate cutting scheme and the size data, determine the waste score of the candidate cutting scheme based on the aforementioned waste portion, and determine the scheme score of the candidate cutting scheme in combination with the unit score of the crystal unit. The waste score can be used to evaluate the degree of waste of the initial crystal by the candidate cutting scheme. The aforementioned waste score can be related to the volume or weight of the waste generated by the initial crystal cutting after executing the candidate cutting scheme. The more waste, the more waste there is, and the lower the waste score. In some embodiments, the aforementioned waste score can be a negative value.

[0411] Some embodiments of this specification can combine discard scores to evaluate candidate cutting plans from multiple aspects, which can effectively reduce crystal consumption and save production costs.

[0412] Step 1340 : Determine a cutting plan for the initial crystal based on the plan scores of each candidate cutting plan.

[0413] In some embodiments, the crystal processing device may determine the candidate cutting plan with the highest plan score as the cutting plan for the initial crystal.

[0414] Some embodiments of this specification can screen candidate cutting plans to make the determined cutting plans more in line with the user's cutting needs, improve the degree of automation of crystal production, improve the flexibility and adaptability of initial crystal cutting, reduce the cost and error caused by manually designed cutting plans, and ensure the smooth progress of initial crystal cutting.

[0415] In some embodiments, the initial crystals on the tray (for example, crystal units that have been cut) can be assembled by a robotic arm to improve the degree of automation of crystal production, improve assembly efficiency and accuracy, and reduce assembly costs. It is understandable that the robotic arm can grab and assemble the initial crystals on the tray based on a preset program. If the initial crystal is not placed in the designated position on the tray, or the crystal placed in the corresponding position is not the right size, it may cause the crystal assembly to fail or have defects. Based on this, some embodiments of the present specification can determine the size data and the first position data of the initial crystal by performing image recognition on the image to be identified of one or more initial crystals on the tray, thereby determining a first adjustment scheme for adjusting one or more initial crystals on the tray, thereby improving the success rate of crystal assembly. For more information about assembling initial crystals, please refer to the relevant description above in this specification.

[0416] Figure 14 is an exemplary flow chart for determining a first adjustment scheme for an initial crystal according to some embodiments of this specification. In some embodiments, process 1400 can be executed by a crystal processing system or device, or by a processor of the crystal processing system or device, or by other means. For ease of explanation, the remainder of this specification will use the crystal processing device executing process 1400 as an example. As shown in Figure 14, process 1400 may include the following steps.

[0417] Step 1410 : Acquire an image of a tray containing one or more initial crystals to be identified.

[0418] Step 1420 : Perform image recognition on the image to be recognized to determine size data and first position data of one or more initial crystals.

[0419] In some embodiments, the crystal processing device can perform image recognition on the image to be recognized using a size recognition model to determine the size data of one or more initial crystals. For more information about the size recognition model, please refer to the relevant description above in this specification.

[0420] The first position data may refer to the position data of the initial crystals in the tray. For example, if the tray is rectangular, a tray coordinate system may be constructed with the lower left corner of the tray as the coordinate origin, the width of the tray as the X-axis, and the length of the tray as the Y-axis. The first position data may refer to the position of each initial crystal in the tray within the aforementioned tray coordinate system. In some embodiments, the first position data may include the coordinate position and tilt angle of each initial crystal in the tray. The aforementioned coordinate position may be the coordinate position of the centroid of the initial crystal, and the aforementioned tilt angle may be the tilt angle of the initial crystal in the extension direction.

[0421] In some embodiments, the crystal processing device can analyze and process the image to be identified using a first position recognition model to determine the first position data of one or more initial crystals. The crystal processing device can input the image to be identified into the first position recognition model, and the output of the first position recognition model can be the first position data of one or more initial crystals. The first position recognition model can be a convolutional neural network or any other machine learning model capable of implementing this function, or a combination thereof.

[0422] The first position recognition model can be trained using a fifth training sample with a fifth label. The fifth training sample can include a third sample image, and the fifth label can include sample first position data corresponding to a third sample crystal in the third sample image. The fifth training sample can be determined by photographing the third sample crystal, and the fifth label can be determined by manually measuring the position of the photographed third sample crystal.

[0423] In some embodiments, the output of the first position recognition model may further include the confidence of the first position data. Correspondingly, when training the first position recognition model, the fifth label may further include a third sample confidence, and the third sample confidence may be determined by manual annotation. When the confidence of the first position data output by the first position recognition model is greater than a preset third confidence threshold, the first position data output by the first position recognition model may be determined as the first position data of the initial crystal; when the confidence of the first position data output by the first position recognition model is less than or equal to the preset third confidence threshold, a new image to be recognized may be obtained by adjusting the color of the light source or the shooting angle and position of the image acquisition device, and the new image to be recognized may be processed by the first position recognition model until the first position data output by the first position recognition model is greater than the third confidence threshold, thereby ensuring the accuracy of the first position data in the recognition result.

[0424] Step 1430 : Determine a first adjustment solution based on the configuration target of the tray, the size data of one or more initial crystals, and the first position data.

[0425] The configuration target may refer to the target for configuring the initial crystals on the tray. The configuration target may include the number of initial crystals to be configured on the tray, the size of each initial crystal, and the position relative to the tray, etc.

[0426] In some embodiments, the crystal processing device can analyze the size data and first position data of each initial crystal to evaluate whether each initial crystal meets the configuration target. When each initial crystal meets the configuration target, it can be determined that the first adjustment scheme does not require adjustment; when there are one or more initial crystals that do not meet the configuration target, the crystal processing device can determine the first adjustment scheme for adjusting the corresponding initial crystal.

[0427] For example, when an initial crystal on a tray does not match the position specified in the configuration target (e.g., position coordinate deviation or angle deviation), the first adjustment plan may include adjusting the initial crystal to the corresponding position of the configuration target. For another example, when there are excess initial crystals in the tray, the first adjustment plan may include removing the excess initial crystals from the tray. For another example, when the size data of an initial crystal on a tray does not meet the crystal size specified for the corresponding position in the configuration target, the first adjustment plan may include replacing the initial crystal at the corresponding position so that the size data of the replaced initial crystal matches the crystal size specified for the corresponding position in the configuration target.

[0428] In some embodiments, the crystal processing device may send the first adjustment plan to a user terminal for the user to view.

[0429] In some embodiments, the crystal processing device may further generate a control instruction based on the first adjustment scheme and send it to the robotic arm. After receiving the control instruction, the robotic arm may adjust the initial crystal on the tray.

[0430] Some embodiments of the present specification perform image recognition on one or more initial crystals on a tray, and determine a first adjustment plan for adjusting the initial crystals on the tray based on the recognition results, thereby ensuring that the initial crystals are all located at designated positions on the tray, ensuring the subsequent smooth assembly of the initial crystals on the tray, and improving the assembly efficiency and quality of the initial crystals.

[0431] In some embodiments, the initial crystal may further comprise crystal units that form a crystal array. In some embodiments of this specification, image recognition is performed on an image of a crystal array composed of multiple initial crystals. Based on the size data of each initial crystal in the crystal array, it is determined whether adjustments need to be made to the initial crystals at various positions in the aforementioned crystal array. This can ensure the appearance consistency of the crystal array, improve the assembly quality of the crystal array, and enhance detection efficiency.

[0432] In some embodiments, the crystal processing device can also analyze the performance data and first position data of each initial crystal to evaluate whether each initial crystal meets the performance target. When each initial crystal meets the performance target, it can be determined that the third adjustment scheme does not require adjustment; when there are one or more initial crystals that do not meet the performance target, the crystal processing device can determine the third adjustment scheme for adjusting the corresponding initial crystal.

[0433] The aforementioned performance targets may refer to one or more performance parameters that the initial crystals on the tray must meet. These performance parameters may refer to parameters that characterize the performance of the crystals, including but not limited to surface roughness, light yield, energy resolution, and decay time. These performance parameters can be obtained by testing the initial crystals using performance testing equipment.

[0434] Performance targets may include the ranges within which one or more performance parameters of the initial crystals to be placed on the tray must meet. For example, these performance targets may include, but are not limited to, a surface roughness target (also referred to as a target surface roughness), a light yield target (also referred to as a target light yield), an energy resolution target (also referred to as a target energy resolution), and a decay time target (also referred to as a target decay time). Performance targets may be determined by the application requirements of the crystal array.

[0435] For example, the crystal processing device can also obtain one or more performance parameters of the initial crystals at each position on the tray, and determine whether the data of the initial crystals at each position meet the performance targets. When the performance parameters of the initial crystals at a certain position meet the configuration targets, the initial crystals at the corresponding position are retained. When the performance parameters of the initial crystals at a certain position do not meet the configuration targets, the initial crystals at the corresponding position are replaced, and the data of the replaced initial crystals meet the configuration targets.

[0436] In some embodiments, the crystal processing device may send the third adjustment solution to the user terminal to prompt the user to adjust the crystal array. After receiving the third adjustment solution through the user terminal, the user may choose whether to adjust the crystal array as needed.

[0437] In some embodiments, the crystal processing device may further generate a control instruction based on the third adjustment scheme and send it to the robotic arm. After receiving the control instruction, the robotic arm may adjust the initial crystal on the tray.

[0438] Some embodiments of the present specification also perform image recognition on the image to be identified of a crystal array composed of multiple initial crystals, and determine whether it is necessary to adjust the initial crystals at various positions in the aforementioned crystal array based on the performance parameters of each initial crystal in the crystal array. This can ensure the performance consistency of the crystal array, improve the assembly quality of the crystal array, and improve detection efficiency.

[0439] In some embodiments, the initial crystal also includes a crystal array composed of multiple crystal units, and there is a reflective structure between at least two adjacent crystal units in the aforementioned crystal array. The processing scheme may include a second adjustment scheme for adjusting the crystal units and / or reflective structures in the initial crystal.

[0440] FIG15 is an exemplary flowchart for determining a second adjustment scheme for an initial crystal according to some embodiments of this specification. In some embodiments, process 1500 can be executed by a crystal processing system or device, or by a processor of the crystal processing system or device, or by other means. For ease of explanation, the remainder of this specification will use the crystal processing device executing process 1500 as an example. As shown in FIG15 , process 1500 may include the following steps.

[0441] Step 1510 , obtaining an image to be identified related to a crystal array composed of a plurality of crystal units, wherein a reflective structure exists between at least two adjacent crystal units in the crystal array.

[0442] A crystal array can refer to an array composed of multiple crystal units. Such crystal arrays can be used in nuclear medicine, such as X-ray tomography and positron emission tomography, as well as in nuclear detection technologies such as industrial tomography, oil well exploration, nuclear physics, high-energy physics, environmental monitoring, safety testing, and weapon fire control and guidance.

[0443] A reflective structure is provided between at least two adjacent crystal units in the crystal array. The aforementioned reflective structure refers to a structure within the crystal array that has light-reflecting capabilities. The reflective structure can enhance the optical performance of the crystal array and prevent light crosstalk between target crystals. The reflective structure includes, but is not limited to, one or more of a reflective filler (e.g., a barium compound, a titanium compound, or a mixture of a barium compound and a titanium compound) and a reflective film (e.g., an ESR film, polytetrafluoroethylene tape, aluminum foil, or a white polyester reflective film).

[0444] Regarding how to obtain the image to be identified of the crystal array, please refer to FIG. 11 and its related description.

[0445] Step 1520 : Perform image recognition on the image to be recognized to determine the second position data, the second defect data, and the third defect data.

[0446] The second position data characterizes the relative positions of the plurality of crystal units in the crystal array, for example, the arrangement position of each crystal unit in the crystal array (eg, a certain position in a certain row).

[0447] In some embodiments, the crystal processing device may perform image recognition on the image to be recognized based on a second position recognition model to determine second position data. The crystal processing device may input the image to be recognized into the second position recognition model, and the output of the second position recognition model may be the second position data of each crystal unit in the crystal array. The second position recognition model may be a convolutional neural network or any other machine learning model capable of implementing such functionality, or a combination thereof.

[0448] The second position recognition model can be trained using a sixth training sample with a sixth label. The sixth training sample can include the fourth sample image, and the sixth label can include the sample second position data corresponding to the first sample crystal unit in the fourth sample image. The sixth training sample can be determined by photographing the first sample crystal array, and the sixth label can be determined by manually annotating the position of the first sample crystal unit in the photographed first sample crystal array.

[0449] In some embodiments, the output of the second position recognition model may further include the confidence of the second position data. Correspondingly, when training the second position recognition model, the sixth label may further include a fourth sample confidence, which may be determined by manual annotation. When the confidence of the second position data output by the second position recognition model is greater than a preset fourth confidence threshold, the second position data output by the second position recognition model may be determined as the second position data of the crystal unit; when the confidence of the second position data output by the second position recognition model is less than or equal to the preset fourth confidence threshold, a new image to be recognized may be obtained by adjusting the color of the light source or the shooting angle and position of the image acquisition device, and the new image to be recognized may be processed by the second position recognition model until the second position data output by the second position recognition model is greater than the fourth confidence threshold, thereby ensuring the accuracy of the second position data in the recognition result.

[0450] The second defect data may refer to data characterizing defects in the crystal unit itself in the crystal array. For example, the second defect data may include, but is not limited to, the location and size of defects such as point defects, line defects, surface defects, crystal grains, and inclusions in the crystal unit.

[0451] In some embodiments, the crystal processing device may perform image recognition on the image to be recognized using a second defect recognition model to determine second defect data. The crystal processing device may input the image to be recognized into the second defect recognition model, and the output of the second defect recognition model may be the second defect data of the crystal unit in the image to be recognized. The second defect recognition model may be a convolutional neural network or any other machine learning model capable of implementing such functionality, or a combination thereof.

[0452] The second defect recognition model can be trained using a seventh training sample with a seventh label. The seventh training sample can include the fifth sample image, and the seventh label can include sample second defect data corresponding to the second sample crystal unit in the fifth sample image. The seventh training sample can be determined by photographing the second sample crystal array, and the seventh label can be determined by manually observing and annotating the photographed second sample crystal unit.

[0453] In some embodiments, the output of the second defect recognition model may further include the confidence level of the second defect data. Correspondingly, when training the second defect recognition model, the seventh label may further include the fifth sample confidence level, which may be determined through manual annotation. When the confidence level of the second defect data output by the second defect recognition model is greater than the preset fifth confidence threshold, the second defect data output by the second defect recognition model may be determined as the second defect data of the crystal; when the confidence level of the second defect data output by the second defect recognition model is less than or equal to the preset fifth confidence threshold, a new image to be recognized may be obtained by adjusting the color of the light source or the shooting angle and position of the image acquisition device, and the new image to be recognized may be processed by the second defect recognition model until the second defect data output by the second defect recognition model is greater than the fifth confidence threshold, thereby ensuring the accuracy of the second defect data in the recognition result.

[0454] The third defect data is data characterizing defects in the crystal array configuration. In some embodiments, the third defect data may include defects in the positioning of crystal units in the crystal array. For example, a crystal unit at a certain position in a row is not aligned with other crystal units. In some embodiments, the third defect data may also include defects in the positioning of reflective structures in the crystal array. For example, a reflective structure is missing between two adjacent crystal units. In another example, a reflective structure is positioned incorrectly.

[0455] In some embodiments, the crystal processing device can perform image recognition on the image to be identified using a third defect recognition model to determine third defect data. The crystal processing device can input the image to be identified and the target array image into the third defect recognition model. The output of the third defect recognition model can be third defect data for the crystal unit in the image to be identified. The third defect recognition model can be a convolutional neural network or any other machine learning model capable of implementing this function, or a combination thereof. The target array image can be an image of the crystal array to be set. The target array image can be determined by user input.

[0456] The third defect recognition model can be acquired by training with an eighth training sample with an eighth label. The eighth training sample can include the sixth sample image and the sample array image, and the eighth label can include the sample third defect data corresponding to the third sample crystal unit in the sixth sample image. The eighth training sample can be determined by photographing the third sample crystal array, and the eighth label can be manually determined by comparing the settings of the third sample crystal unit and the sample reflective structure in the sixth sample image and the sample array image.

[0457] In some embodiments, the output of the third defect recognition model may further include the confidence level of the third defect data. Correspondingly, when training the third defect recognition model, the eighth label may further include the sixth sample confidence level, which may be determined through manual annotation. When the confidence level of the third defect data output by the third defect recognition model is greater than the preset sixth confidence threshold, the third defect data output by the third defect recognition model may be determined as the third defect data of the crystal unit; when the confidence level of the third defect data output by the third defect recognition model is less than or equal to the preset sixth confidence threshold, a new image to be recognized may be obtained by adjusting the color of the light source or the shooting angle and position of the image acquisition device, and the new image to be recognized may be processed by the third defect recognition model until the third defect data output by the third defect recognition model is greater than the sixth confidence threshold, thereby ensuring the accuracy of the third defect data in the recognition result.

[0458] Step 1530 : Determine a second adjustment solution based on the second position data, the second defect data, and the third defect data.

[0459] The crystal processing device can analyze and process the second position data, the second defect data, the third defect data, and the target array requirements to determine a second adjustment solution. The target array requirements can be user-entered requirements for the crystal array, such as the allowable defect types and sizes. Another example is the specific arrangement of the crystal array.

[0460] For example, when the second position data indicates that the second row includes only three crystal units, but the target array requirement indicates that the second row includes four crystal units, the crystal processing device may determine that the second adjustment solution includes adding one crystal unit to the second row.

[0461] For another example, when the second defect data indicates that there is a defect with a volume of 0.02 mm3 in the second crystal unit from the left in the second row, but the maximum volume of defects allowed by the target array requirement characterization is 0.01 mm3, the crystal processing device can determine that the second adjustment scheme includes supplementing a reflective structure between the second crystal unit from the left and the third crystal unit in the second row.

[0462] For another example, when the third defect data indicates that no reflective structure is provided between the second crystal unit from the left and the third crystal unit in the second row, the crystal processing device may determine that the second adjustment scheme includes supplementing a reflective structure between the second crystal unit from the left and the third crystal unit in the second row.

[0463] For another example, when the second position data, the second defect data, and the third defect data all meet the target array requirements, the crystal processing device may determine that the second adjustment solution does not require adjustment.

[0464] Some embodiments of the present specification can determine a second adjustment scheme for adjusting the crystal units and / or reflective structures in the crystal array by performing image recognition on an image to be identified that includes a crystal array. This can improve the detection efficiency of the crystal array, ensure the yield of the crystal array, and enhance the degree of automation in crystal production.

[0465] In some embodiments, the crystal processing device may send the second adjustment plan to the user terminal to prompt the user to adjust the crystal array. After receiving the second adjustment plan through the user terminal, the user may choose whether to adjust the crystal array as needed.

[0466] In some embodiments, the crystal units and / or reflective structures in the crystal array can be adjusted by a robotic arm based on the second adjustment scheme to complete the packaging of the crystal array. The crystal processing device can generate control instructions based on the second adjustment scheme and send them to the robotic arm. The robotic arm can adjust the crystal units and / or reflective structures in the crystal array based on the received control instructions, thereby completing the packaging of the crystal array, improving the packaging efficiency and accuracy of the crystals, ensuring the continuous operation capability of the crystal packaging, and reducing costs.

[0467] It is understandable that when photographing a transparent initial crystal, the initial crystal in the crystal image may reflect light or blend into the background area, resulting in an incomplete display of the initial crystal. Directly performing image recognition based on this crystal image as the image to be identified will reduce the accuracy of the recognition results. Based on this, some embodiments of this specification can determine the integrity of the initial crystal in the crystal image to ensure that the initial crystal is fully displayed in the image to be identified, thereby ensuring the accuracy of image recognition of the image to be identified.

[0468] FIG16 is an exemplary flow chart for determining an image to be identified according to some embodiments of this specification. In some embodiments, process 1600 can be performed by a crystal processing system or a crystal processing device, or by a processor of the crystal processing system or the crystal processing device, or by other methods. For ease of explanation, the following description of this specification will use the crystal processing device executing process 1600 as an example. In some embodiments, for each of one or more initial crystals, the crystal processing device can execute process 1600 to determine the integrity of the initial crystal in the image to be identified. As shown in FIG16 , process 1600 can include the following steps.

[0469] Step 1610: Acquire a crystal image of the initial crystal under the initial light source.

[0470] The aforementioned initial light source may refer to a pre-set light source.

[0471] Step 1620 , performing image recognition on the crystal image to obtain a crystal segmentation result of the initial crystal.

[0472] The crystal segmentation result refers to the result of segmenting the initial crystal in the crystal image. The crystal segmentation result only includes the initial crystal in the crystal image.

[0473] In some embodiments, the crystal processing device may perform image recognition on the crystal image based on the segmentation model to obtain a crystal segmentation result of the initial crystal in the crystal image. The crystal processing device may input the crystal image into the segmentation model to obtain a crystal segmentation result of the initial crystal in the crystal image of the segmentation model. The segmentation model may be one or more convolutional neural networks or any other machine learning models capable of implementing this function.

[0474] The segmentation model can be trained using a ninth training sample with a ninth label. The ninth training sample can include the seventh sample image, and the ninth label can include a crystal segmentation result corresponding to the fourth sample crystal in the seventh sample image. The ninth training sample can be determined by photographing the fourth sample crystal, and the ninth label can be determined by manually segmenting the fourth sample crystal in the seventh sample image.

[0475] Step 1630 , determining whether the crystal segmentation result indicates that the initial crystal is complete.

[0476] The crystal processing device can evaluate the crystal segmentation results using a completeness assessment model to determine whether the crystal segmentation results display the corresponding initial crystal as complete. The completeness assessment model can take the crystal segmentation results as input and output a determination of whether the crystal segmentation results display the corresponding initial crystal as complete. The completeness assessment model can be one or more convolutional neural networks or any other machine learning models capable of implementing this function.

[0477] The completeness assessment model can be obtained by training a tenth training sample with a tenth label. The tenth training sample may include the segmentation result of the first sample, and the tenth label may include a sample determination result of whether the aforementioned sample segmentation result displays the corresponding initial crystal intact. The aforementioned tenth training sample may be determined by photographing the initial crystal and then performing segmentation, and the tenth label may be determined by manually partially occluding or not occluding the tenth training sample. When the tenth training sample is not occluded, the corresponding tenth label is displayed intact; when the tenth training sample is partially occluded, the corresponding tenth label is displayed incompletely.

[0478] Step 1640 : When the crystal segmentation result indicates that the initial crystal is complete, the crystal image is determined as the image to be identified of the initial crystal.

[0479] Step 1650 : When the crystal segmentation result indicates that the initial crystal is not complete, adjust the light source angle to obtain a crystal image of the initial crystal under the adjusted light source.

[0480] In some embodiments, the crystal processing device can adjust the angle of the light source based on a variety of methods. For example, the crystal processing device can adjust the light source based on a preset adjustment angle.

[0481] In some embodiments, the crystal processing device may further analyze and process the crystal segmentation result based on the light source adjustment model to determine an adjusted light source angle.

[0482] In some embodiments, the light source adjustment model may include a missing position judgment layer and an angle adjustment layer. The aforementioned missing position judgment layer can be used to judge the missing crystal position in the crystal segmentation result. The input of the missing position judgment layer may include the crystal segmentation results of each initial crystal, and the output may include the crystal position corresponding to the missing initial crystal. The aforementioned angle adjustment layer can be used to adjust the light source angle to supplement the crystal position missing from the initial crystal. The input of the angle adjustment layer may include the crystal position missing from the initial crystal, and the output may include the adjusted light source angle. The missing position judgment layer and the angle adjustment layer can be one or more of a convolutional neural network or any other machine learning model that can implement this function.

[0483] In some embodiments, the light source adjustment model can be obtained by jointly training the missing position judgment layer and the angle adjustment layer. The eleventh training sample may include the second sample segmentation result, and the eleventh label may include the adjusted sample light source angle. The eleventh training sample can be input into the initial missing position judgment layer, and the output of the initial missing position judgment layer can be input into the initial angle adjustment layer. A loss function is constructed based on the output and label of the initial angle adjustment layer, and the parameters of the initial missing position judgment layer and the initial angle adjustment layer are iteratively updated based on the loss function until the preset conditions are met, the parameters in the missing position judgment layer and the angle adjustment layer are determined, and a trained light source adjustment model is obtained. The preset conditions may include but are not limited to the convergence of the loss function, the training cycle reaching a threshold, etc.

[0484] In some embodiments, the fifth sample crystal can be photographed at a sample light source angle to obtain an image. In the aforementioned image, the fifth sample crystal has reflections or merges with the background area. The aforementioned image is processed to obtain a second sample segmentation result. The second sample segmentation result indicates that the fifth sample crystal is not fully displayed. The second sample segmentation result is used as the eleventh training sample. By manually adjusting the aforementioned sample light source angle, the adjusted fifth sample crystal is photographed to obtain an image. A new sample crystal segmentation result can be obtained by processing the aforementioned image. The aforementioned new sample crystal segmentation result can supplement the missing part of the fifth sample crystal in the second sample segmentation result. The adjusted sample light source is used as the eleventh label. It is worth noting that the new sample crystal segmentation result can fully display the fifth sample crystal or incompletely display the fifth sample crystal.

[0485] Step 1660: Perform image recognition on the crystal image under the adjusted light source to obtain a new crystal segmentation result.

[0486] Performing image recognition on the crystal image under the adjusted light source to obtain a new crystal segmentation result can refer to the relevant description of performing image recognition on the crystal image in step 1620 to obtain the crystal segmentation result of the initial crystal.

[0487] Step 1670 , merging the previously obtained crystal segmentation results until the fused crystal segmentation results represent a complete display of the initial crystal, and then determining an image to be identified based on the previously obtained crystal image of the initial crystal.

[0488] In some embodiments, after obtaining a new crystal segmentation result, the crystal processing device may fuse the previously obtained crystal segmentation results and determine whether the fused crystal segmentation result represents the complete display of the initial crystal based on the completeness evaluation model. When the fused crystal segmentation result represents that the initial crystal is completely displayed, an image fusion may be performed on the crystal image of the previously obtained initial crystal, and the fused crystal image may be determined as the image to be identified. When the fused crystal segmentation result represents that the initial crystal is not completely displayed, steps 1650 to 1660 may be repeated until the fused crystal segmentation result represents that the initial crystal is completely displayed.

[0489] In some embodiments, when it is necessary to determine processing solutions for multiple initial crystals, the crystal processing device may fuse the fully displayed images of the multiple initial crystals to obtain images to be identified corresponding to the multiple initial crystals.

[0490] Some embodiments of this specification determine the integrity of the initial crystal in the crystal image to ensure that the initial crystal can be completely displayed in the image to be recognized, thereby ensuring the accuracy of image recognition of the image to be recognized.

[0491] It should be noted that the above descriptions of the various processes are for illustration and purpose only and do not limit the scope of application of this specification. Those skilled in the art may make various modifications and alterations to the various processes under the guidance of this specification. However, such modifications and alterations are still within the scope of this specification.

[0492] This specification also discloses a crystal detection device, which can be used to detect size data, defect data, etc. of an initial crystal.

[0493] FIG. 17 is an exemplary block diagram of a crystal detection device according to some embodiments of the present specification.

[0494] The crystal detection device 1700 can be used to automatically detect the size data, defect data, etc. of the initial crystal. The size data of the initial crystal may include geometric data such as the length, width, length, and height of the initial crystal. The defect data of the initial crystal may include point defects of the initial crystal (i.e., defects at the atomic scale, such as vacancies, interstitial atoms, substitutional atoms, etc.), line defects (i.e., defects distributed along a linear path in the crystal, such as dislocations), surface defects (i.e., defects on the crystal surface or interface, such as surface roughness, cracks, etc.), and body defects (i.e., defects existing inside the crystal, such as inclusions, holes, etc.).

[0495] In some embodiments, as shown in FIG. 17 , a crystal detection device 1700 may include a moving component 1710 , a first detection component 1720 , and a second detection component 1730 .

[0496] The moving assembly 1710 can be used to move the position of the initial crystal. In some embodiments, as shown in Figure 17, the moving assembly 1710 may include a moving member 1711 and a first picking member 1712, wherein the first picking member 1712 can be set on the moving member 1711, the first picking member 1712 can pick up the initial crystal, and the moving member 1711 can adjust the position and / or angle of the first picking member 1712, thereby adjusting the position and / or angle of the initial crystal. For example, the moving assembly 1710 can take the initial crystal out of the tray and place it on the size measurement table. For another example, the moving assembly 1710 can also pick up the initial crystal placed on the size measurement table 1722 and place it on the defect measurement table 1732. For another example, the moving assembly 1710 can also pick up the initial crystal placed on the size measurement table 1722 or the defect measurement table 1732, and put it back to the corresponding position after flipping or rotating it.

[0497] The moving member 1711 can be a variety of movable structures. For example, the moving member 1711 can be a robotic arm as shown in Figure 18. For another example, the moving member 1711 can also be a guide rail system. The moving member 1711 can also control the first picking member 1712 to rotate or flip to drive the initial crystal to rotate or flip. For example, the robotic arm can drive the first picking member 1712 disposed thereon to rotate or flip.

[0498] The first picking member 1712 may comprise any structure capable of picking up the initial crystal. For example, as shown in FIG18 , the first picking member 1712 may comprise an air pump and a suction cup, and the first picking member 1712 may pick up the initial crystal by inflating and deflating air. For more details on the above example, please refer to the relevant description below in this specification. For another example, the first picking member 1712 may also comprise a mechanical gripper.

[0499] The first detection component 1720 can be used to obtain a first image of the initial crystal, which is used to determine the size data of the initial crystal. The first image can be a two-dimensional image or a three-dimensional image.

[0500] In some embodiments, as shown in FIG. 17 , the first detection component 1720 may include a first image acquisition component 1721 and a dimension measurement platform 1722 .

[0501] The dimension measuring stage 1722 can carry the initial crystal.

[0502] In some embodiments, the surface of the size measurement platform 1722 that contacts the initial crystal may be provided with size markings. Accordingly, when the first image capture component 1721 captures the initial crystal on the size measurement platform 1722, the captured first image may include at least a portion of the size markings to assist in analyzing the size data of the initial crystal. The size markings can be provided in various forms. For example, the size markings may be unit size markings. In another example, the size markings may be grid size markings.

[0503] The first image acquisition component 1721 captures the initial crystal on the size measurement platform 1722 to obtain at least one first image of the initial crystal. The first image acquisition component 1721 may include but is not limited to a camera, a video camera, etc.

[0504] In some embodiments, the first image capture component 1721 captures the initial crystal on the size measurement platform 1722 to obtain a first image of the initial crystal. For example, the first image capture component 1721 captures the initial crystal on the size measurement platform 1722 to obtain a first image of the initial crystal. The first image may be a stereoscopic image of the initial crystal, which may include multiple peripheral surfaces of the initial crystal. For more information about peripheral surfaces, please refer to the relevant description below in this specification.

[0505] In some embodiments, the first detection component 1720 may include a first image capture component 1721. For example, after the first image capture component 1721 completes photographing the initial crystal on the size measurement platform 1722, the moving component 1710 may pick up the initial crystal on the size measurement platform 1722, rotate or flip the initial crystal, and then place it back on the size measurement platform 1722. The first image capture component 1721 may then photograph the initial crystal again to obtain multiple first images of the initial crystal, thereby ensuring that the dimensions of the initial crystal in different directions can be obtained. For another example, after the first image capture component 1721 completes photographing the initial crystal on the size measurement platform 1722, the first image capture component 1721 may move relative to the size measurement platform 1722 (e.g., from the top surface of the size measurement platform 1722 to the circumference of the size measurement platform 1722). The moved first image capture component 1721 may then photograph the initial crystal on the size measurement platform 1722 again to obtain multiple first images of the initial crystal, thereby ensuring that the dimensions of the initial crystal in different directions can be obtained. For more description on how the first image acquisition component 1721 moves, please refer to the relevant description below in this specification.

[0506] In some embodiments, the first detection assembly 1720 may include multiple first image acquisition components 1721. These multiple first image acquisition components 1721 may be positioned relative to each other in different directions relative to the dimension measurement platform 1722. Each of these multiple first image acquisition components 1721 may capture the initial crystal on the dimension measurement platform 1722 to obtain multiple first images of the initial crystal, thereby ensuring that the dimensions of the initial crystal in different directions can be obtained. For example, the first detection assembly 1720 may include two first image acquisition components 1721, which may be positioned on the top surface and the peripheral surface of the dimension measurement platform 1722, respectively.

[0507] In some embodiments, the first image acquisition component 1721 and the size measurement platform 1722 are movable so that the first image acquisition component 1721 can align with the initial crystal on the size measurement platform 1722 to capture the image, ensuring that the initial crystal is within the capture range of the first image acquisition component 1721. In addition, by making the size measurement platform 1722 movable, it is convenient for the mobile component 1710 to place the initial crystal on the size measurement platform 1722 or to pick up the initial crystal on the size measurement platform 1722, avoiding obstruction by other structures (e.g., the first image acquisition component 1721). For more details about the above embodiments, please refer to the relevant description below in this specification.

[0508] The second detection component 1730 can be used to obtain a second image of the initial crystal, which is used to determine the defect data of the initial crystal. The second image can be a two-dimensional image or a three-dimensional image.

[0509] In some embodiments, as shown in FIG. 17 , the second inspection component 1730 may include at least one second image acquisition component 1731 and at least one defect measurement platform 1732 .

[0510] The defect measurement stage 1732 can be used to support the initial crystal.

[0511] The second image acquisition component 1731 captures the initial crystal on the defect measurement platform 1732 to obtain at least one second image of the initial crystal. The second image acquisition component 1731 may include but is not limited to a camera, a video camera, etc.

[0512] In some embodiments, the second image acquisition component 1731 photographs the initial crystal on the defect measurement platform 1732 to obtain a second image of the initial crystal.

[0513] In some embodiments, the second detection component 1730 may include a second image capture component 1731. For example, after the second image capture component 1731 completes photographing the initial crystal on the defect measurement stage 1732, the moving component 1710 may pick up the initial crystal on the defect measurement stage 1732, rotate or flip the initial crystal, and then place it back on the defect measurement stage 1732. The second image capture component 1731 may then photograph the initial crystal again to obtain multiple second images of the initial crystal, thereby ensuring a more comprehensive understanding of defects at different locations on the initial crystal. For another example, after the second image capture component 1731 completes photographing the initial crystal on the defect measurement platform 1732, the second image capture component 1731 can move relative to the defect measurement platform 1732 (for example, from the top surface of the defect measurement platform 1732 to the peripheral surface of the defect measurement platform 1732). After moving, the second image capture component 1731 can again photograph the initial crystal on the defect measurement platform 1732 to obtain multiple second images of the initial crystal, thereby ensuring a more comprehensive understanding of defects at different locations on the initial crystal. For more description of how the second image capture component 1731 moves, please refer to the relevant content of the first image capture component 1721.

[0514] In some embodiments, the second detection component 1730 may include a plurality of second image acquisition components 1731. For more information about the plurality of second image acquisition components 1731, please refer to the relevant description later in this specification.

[0515] Some embodiments of this specification can automatically detect the size data, defect data, etc. of the initial crystal through the aforementioned crystal detection device 1700, thereby improving the efficiency of crystal detection and ensuring the accuracy of crystal detection.

[0516] In some embodiments, the crystal detection device 1700 may further include other structures.

[0517] In some embodiments, the crystal detection device 1700 may further include a processing device. The aforementioned processing device may be directly disposed in the crystal detection device 1700 or may be disposed outside the crystal detection device 1700 and be communicatively connected with multiple components in the crystal detection device 1700 .

[0518] The processing device can control multiple components in crystal detection apparatus 1700. For example, the processing device can control moving assembly 100 to pick up an initial crystal and adjust the position and / or angle of the initial crystal. For another example, the processing device can also control first image acquisition component 1721 and second image acquisition component 1731 to capture the initial crystal.

[0519] The processing device may also process data and / or information obtained from other devices or components of the crystal detection apparatus 1700 .

[0520] In some embodiments, the processing device may acquire the first image and analyze the first image to determine the dimensional data of the initial crystal. For example, the processing device may analyze the dimensions of each dimension of the initial crystal in the first image based on the dimension annotations in the first image to determine geometric data such as the length, width, and height of the initial crystal.

[0521] In some embodiments, the processing device may also acquire a second image, and perform modeling or employ various data analysis algorithms, such as regression analysis, discriminant analysis, etc., to analyze and process the second image to determine the defect data of the initial crystal. For example, the processing device may input the second image into a defect analysis model, and the output of the defect analysis model is the defect data of the initial crystal. The aforementioned defect analysis model may be a convolutional neural network or any other machine learning model that can achieve its function. The defect analysis model may be obtained by training based on a twelfth training sample with a twelfth label. The aforementioned twelfth training sample may include a sample second image of a sixth sample crystal, and the twelfth label may include the defect data of the sixth sample crystal. The twelfth training sample may be obtained by manually photographing the sixth sample crystal, and the twelfth label may be obtained by manually annotating the sixth sample crystal.

[0522] In some embodiments, the processing device may further classify the initial crystals based on their size data and defect data. For example, the processing device may analyze and process the size data and defect data of the initial crystals to determine that initial crystals that meet preset conditions are qualified crystals, and that initial crystals that do not meet the preset conditions are unqualified crystals. Furthermore, the processing device may control the moving assembly 1710 to place qualified crystals and unqualified crystals in different areas for subsequent processing.

[0523] In some embodiments, the crystal detection device 1700 may further include a third image capture component 1740. The third image capture component 1740 may include, but is not limited to, a camera, a video camera, etc. In some embodiments, the third image capture component 1740 may be fixedly positioned at a preset position in the crystal detection device 1700. The third image capture component 1740 positioned at the preset position may capture various positions in the crystal detection device 1700 where the initial crystal may be located. For example, the third image capture component 1740 may be positioned on the top wall of the crystal detection device 1700 to facilitate capturing various positions where the initial crystal may be located. For another example, as shown in FIG18 , the third image capture component 1740 may also be positioned on the mobile assembly 1710 to facilitate capturing various positions where the initial crystal may be located before the mobile assembly 1710 picks up the initial crystal.

[0524] The third image acquisition component 1740 can shoot the area where the initial crystal is located to obtain a third image. The third image is used to determine the position of the initial crystal, so that the mobile component 1710 can pick up the initial crystal more accurately. In some embodiments, the processing device can analyze and process the third image to determine the position of the initial crystal. For example, the processing device can input the third image into a position analysis model, and the output of the position analysis model is the position of the initial crystal. The aforementioned position analysis model can be a convolutional neural network or any other machine learning model that can achieve its function. The position analysis model can be obtained by training based on the thirteenth training sample with the thirteenth label. The aforementioned thirteenth training sample can include the sample third image of the seventh sample crystal, the thirteenth label can include the sample position of the seventh sample crystal, the thirteenth training sample can be obtained by manually shooting the seventh sample crystal, and the thirteenth label can be obtained by manually marking the position of the seventh sample crystal. When the third image acquisition component 1740 is a movable component (for example, the third image acquisition component 1740 is set on the movable component 1710), the input of the position analysis model may also include the position of the third image acquisition component 1740. The position of the third image acquisition component 1740 can be obtained through its internal positioning component, or obtained after analyzing and processing the initial position of the third image acquisition component 1740 and the data of each movement (for example, displacement and direction). Correspondingly, when training the aforementioned position analysis model, the thirteenth training sample may also include the position of the sample image acquisition component. The position of the sample image acquisition component can be obtained through manual annotation.

[0525] In some embodiments of this specification, a third image acquisition component 1740 is provided to acquire a third image for determining the position of the crystal, so as to understand the initial crystal position and thereby achieve precise control of the initial crystal.

[0526] The following description of this specification will describe a configuration method of the mobile component 1710.

[0527] In some embodiments, as shown in FIG18 , the first pickup member 1712 may include an air pump 17121 and a suction cup 17122 . The air pump 17121 may be used to pump air in and out. The suction cup 17122 may be in contact with the initial crystal. The suction cup 17122 may be made of a flexible material, such as silicone or rubber, to improve sealing when sucking the initial crystal and prevent the initial crystal from falling. Furthermore, the suction cup 17122 made of a flexible material may also prevent damage to the initial crystal during suction.

[0528] Suction cup 17122 can be connected to air pump 17121. For example, suction cup 17122 can be directly connected to air pump 17121. In another example, suction cup 17122 can be connected to air pump 17121 via a pipe. When air pump 17121 draws air, suction cup 17122 generates negative pressure, which allows suction cup 17122 to absorb the initial crystal. When air pump 17121 inflates, the negative pressure in suction cup 17122 disappears, allowing suction cup 17122 to release the initial crystal.

[0529] Some embodiments of this specification use an air pump 17121 and a suction cup 17122 to pick up the initial crystal, which is applicable to initial crystals of different shapes and sizes and avoids possible damage to the initial crystal caused by directly grabbing the initial crystal.

[0530] The following description of this specification will describe a configuration method of the first detection component 1720.

[0531] In some embodiments, the first detection component 1720 also includes a first track 1723, a second track 1724 and a third track 1725, wherein the first track 1723, the second track 1724 and the third track 1725 are perpendicular to each other, and at least one of the first image acquisition component 1721 and the dimension measuring platform 1722 is arranged on the first track 1723 and can move along the extension direction of the first track 1723; at least one of the first image acquisition component 1721 and the dimension measuring platform 1722 is arranged on the second track 1724 and can move along the extension direction of the second track 1724; at least one of the first image acquisition component 1721 and the dimension measuring platform 1722 is arranged on the third track 1725 and can move along the extension direction of the third track 1725.

[0532] In some embodiments, first track 1723, second track 1724, and third track 1725 can be implemented in various ways. One or more of first track 1723, second track 1724, and third track 1725 can be embedded tracks. For example, as shown in FIG19, second track 1724 is an inner cavity track, and dimension measurement platform 1722 can be mounted on a connecting structure, a portion of which is embedded in second track 1724 and can slide on second track 1724. One or more of first track 1723, second track 1724, and third track 1725 can be protruding tracks.

[0533] It is worth noting that when multiple tracks are arranged in an overlapping manner, the same component (e.g., the first image acquisition component 1721 or the dimension measurement platform 1722) can be arranged on multiple tracks at the same time. For example, as shown in FIG19 , the dimension measurement platform 1722 is arranged on the second track 1724, and the second track 1724 is arranged on the third track 1725. Therefore, the second track 1724 can drive the dimension measurement platform 1722 arranged thereon to move along the extension direction of the third track 1725, thereby enabling the dimension measurement platform 1722 to be arranged on both the second track 1724 and the third track 1725 at the same time.

[0534] In some embodiments, the first image acquisition member 1721 and the dimension measurement platform 1722 can be respectively arranged on different tracks. For example, as shown in FIG19 , the first image acquisition member 1721 can be arranged on a first track 1723 and can move along the extension direction of the first track 1723, the dimension measurement platform 1722 can be arranged on a second track 1724 and can move along the extension direction of the second track 1724, and the second track 1724 can be arranged on a third track 1725 and can move along the extension direction of the third track 1725. That is, the dimension measurement platform 1722 is arranged on both the second track 1724 and the third track 1725 and can move along the extension direction of the second track 1724 and the third track 1725, respectively.

[0535] In some embodiments, one of the first image acquisition component 1721 and the dimension measurement platform 1722 can be simultaneously disposed on three rails, and the other of the first image acquisition component 1721 and the dimension measurement platform 1722 can be fixedly disposed in the crystal inspection apparatus 1700. For example, as shown in FIG20 , the dimension measurement platform 1722 can be fixedly disposed in the crystal inspection apparatus 1700, while the first image acquisition component 1721 can be disposed on the second rail 1724 and can move along the extension direction of the second rail 1724, the second rail 1724 can be disposed on the first rail 1723 and can move along the extension direction of the first rail 1723, and the first rail 1723 can be disposed on the third rail 1725 and can move along the extension direction of the third rail 1725. In this way, the first image acquisition component 1721 can be simultaneously disposed on the first rail 1723, the second rail 1724, and the third rail 1725, and can move along the extension directions of the first rail 1723, the second rail 1724, and the third rail 1725, respectively.

[0536] In some embodiments, the first image acquisition component 1721 and the dimension measurement platform 1722 may be disposed on the same track, and the first image acquisition component 1721 and the dimension measurement platform 1722 may respectively move along the extension direction of the track. For example, the first image acquisition component 1721 can be set on the first rail 1723 and can move along the extension direction of the first rail 1723, the first rail 1723 can be set on the second rail 1724 and can move along the extension direction of the second rail 1724, that is, the first image acquisition component 1721 is set on the first rail 1723 and the second rail 1724 at the same time, and can move along the extension direction of the first rail 1723 and the second rail 1724 respectively, the dimension measuring platform 1722 can be set on the second rail 1724 and can move along the extension direction of the second rail 1724, the second rail 1724 can be set on the third rail 1725 and can move along the extension direction of the third rail 1725, that is, the dimension measuring platform 1722 is set on the second rail 1724 and the third rail 1725 at the same time, and can move along the extension direction of the second rail 1724 and the third rail 1725 respectively.

[0537] In some embodiments of the present specification, by placing the first image acquisition component 1721 and / or the dimension measurement platform 1722 on one or more tracks, relative movement between the first image acquisition component 1721 and the dimension measurement platform 1722 can be achieved, thereby achieving alignment of the first image acquisition component 1721 with the initial crystal on the dimension measurement platform 1722, ensuring that the initial crystal is within the acquisition range of the first image acquisition component 1721. In addition, this arrangement facilitates the moving component 1710 to place the initial crystal on the dimension measurement platform 1722, avoiding obstruction of the dimension measurement platform 1722 by the first image acquisition component 1721, and ensuring the stability and safety of the initial crystal during movement.

[0538] The following description of this specification will describe a configuration method of the second detection component 1730.

[0539] In some embodiments, the at least one second image includes multiple images reflecting defects in the initial crystal from different directions, so as to ensure a more comprehensive reflection of defects at various locations in the initial crystal.

[0540] In some embodiments, the at least one second image capture element may include a second image capture element 1731, and the at least one defect measurement stage 1732 may include a defect measurement stage. The second image capture element 1731 may be configured to move relative to the defect measurement stage 1732 to obtain second images of the initial crystal in different orientations. For more information on how to configure the second image capture element 1731 to move relative to the defect measurement stage 1732, see the description of the movement of the first image capture element 1721 relative to the size measurement stage 1722.

[0541] In some embodiments, the at least one second image acquisition component may include a front image acquisition component 17311 and a side image acquisition component, and the at least one defect measurement platform 1732 may include a first defect measurement platform 17321 .

[0542] As shown in FIG21 , the front image capture unit 17311 can be positioned above the first defect measurement platform 17321 to capture the top surface of the initial crystal and obtain a second image. The second image can reflect the relevant defects on the top surface of the initial crystal. The top surface of the initial crystal can refer to the top surface of the initial crystal when placed on the first defect measurement platform 17321, i.e., the surface of the initial crystal away from the first defect measurement platform 17321.

[0543] In some embodiments, the front image capture member 17311 and the first defect measurement platform 17321 can move relative to each other. For example, the front image capture member 17311 and / or the first defect measurement platform 17321 can be mounted on one or more tracks and can move along the extension direction of the one or more tracks. For more information about mounting the front image capture member 17311 and / or the first defect measurement platform 17321 on tracks, see the section regarding mounting the first image capture member 1721 and / or the dimension measurement platform 1722 on tracks.

[0544] The side image capture unit can be disposed on the side of the first defect measurement platform 17321 and is used to capture the peripheral surface of the initial crystal to obtain a second image. The second image can reflect relevant defects on the peripheral surface of the initial crystal. The peripheral surface of the initial crystal can refer to the surface other than the top and bottom surfaces of the initial crystal when placed on the first defect measurement platform 17321.

[0545] In some embodiments, the side image capture member and the first defect measurement platform 17321 can move relative to each other. For example, the side image capture member and / or the first defect measurement platform 17321 can be mounted on one or more tracks and can move along the extension of the one or more tracks. For more information on mounting the side image capture member and / or the first defect measurement platform 17321 on tracks, see the section regarding mounting the first image capture member 1721 and / or the dimension measurement platform 1722 on tracks.

[0546] The front image acquisition component 17311 and the side image acquisition component can be used to acquire the second image of the initial crystal from different angles, thereby enabling a more comprehensive evaluation of the defect data of the initial crystal.

[0547] In some embodiments, the number of the side image acquisition component is one.

[0548] In some embodiments, as shown in Figure 21, the side image acquisition component may include a long side image acquisition component 17312 and a short side image acquisition component 17313. The long side image acquisition component 17312 and the short side image acquisition component 17313 are arranged on different sides of the first defect measurement platform 17321. The long side image acquisition component 17312 and the short side image acquisition component 17313, through the above-mentioned arrangement, can obtain a second image reflecting the initial crystal defects from the two peripheral surfaces of the initial crystal at one time, thereby improving the detection efficiency of the initial crystal.

[0549] In some embodiments, as shown in Figure 21, the second detection component 1730 also includes a first driving member (not shown in Figure 21), a rotating member 1733 and a second picking member 1734. The second picking member 1734 is arranged on the rotating member 1733. The first driving member can drive the rotating member 1733 to rotate around the first rotation axis A, thereby driving the second picking member 1734 to rotate around the first rotation axis A. The second picking member 1734 picks up the initial crystal placed on the first defect measurement table 17321, and puts the rotated initial crystal back on the first defect measurement table 17321, wherein the first rotation axis A is parallel to the height direction.

[0550] The first driving member can be a rotary motor, and the rotating member 1733 can be a structure connected to the aforementioned rotary motor. In some embodiments, the second detection assembly 1730 can also not include the rotating member 1733, and the second picking member 1734 can be directly connected to the first driving member and rotated under the drive of the first driving member.

[0551] Similar to the first pick-up member 1712, the second pick-up member 1734 can also be various structures capable of picking up the initial crystal. For example, the second pick-up member 1734 can include a mechanical gripper. In another example, the second pick-up member 1734 can include an air pump and a suction cup, and the second pick-up member 1734 can pick up the initial crystal by inflating and deflating air.

[0552] In some embodiments, the second pickup member 1734 can move relative to the first defect measurement platform 17321. For example, the second pickup member 1734 and / or the first defect measurement platform 17321 can be disposed on one or more tracks and can move along the extension direction of the one or more tracks. For more information about disposing the second pickup member 1734 and / or the first defect measurement platform 17321 on tracks, please refer to the relevant information about disposing the first image acquisition member 1721 and / or the dimension measurement platform 1722 on tracks.

[0553] It is worth noting that when photographing the defects of the initial crystal, relatively more components are set up. If the state of the initial crystal on the defect measurement table 1732 (for example, the placement angle) is adjusted by the mobile component 1710, a larger moving space needs to be reserved for the mobile component 1710, which is also prone to damage to other components. In some embodiments of this specification, the placement angle of the initial crystal on the first defect measurement table 17321 can be adjusted in a smaller space through the first driving member, the rotating member 1733 and the second picking member 1734, so that the side image acquisition member can photograph different sides of the initial crystal to obtain a second image reflecting the defects on different sides of the initial crystal, thereby ensuring the integrity of the crystal defect detection and avoiding the crystal detection device 1700 from being too large.

[0554] For example, as shown in FIG22A , when there is only one side image acquisition component, after the side image acquisition component photographs the side of a rectangular initial crystal Q, the second picking component 1734 can absorb the initial crystal Q, and the first driving component can drive the rotating component 1733 to rotate 90° around the first rotation axis A, thereby driving the initial crystal Q on the second picking component 1734 to rotate 90° around the first rotation axis A. After the rotation is completed, the second picking component 1734 can put the initial crystal Q back on the first defect measurement table 17321, as shown in FIG22B , and the side image acquisition component can photograph the other side of the initial crystal Q. After photographing, the initial crystal Q can be rotated and photographed again until all sides of the initial crystal Q are photographed.

[0555] It is worth understanding that the rotation angle of the initial crystal each time can be determined by analyzing the crystal shape, the number of side image acquisition components, and the setting position. For example, when the initial crystal is rectangular and the number of side image acquisition components is one, the initial crystal can be rotated 90° each time for photographing. For another example, when the initial crystal is triangular and the number of side image acquisition components is one, the initial crystal can be rotated 120° each time for photographing. For another example, when the initial crystal is rectangular and the second detection component 1730 includes a long side image acquisition component 17312 and a short side image acquisition component 17313, the initial crystal can be rotated 180° each time for photographing.

[0556] In some embodiments, the second image capture component 1731 further includes a backside image capture component 17314, which captures the backside of the initial crystal to obtain a second image. The second image can reflect relevant defects on the bottom surface, thereby enabling a more comprehensive assessment of the defect data of the initial crystal. The bottom surface of the initial crystal can refer to the bottom surface of the initial crystal when placed on the first defect measurement platform 17321, that is, the surface of the initial crystal that contacts the first defect measurement platform 17321.

[0557] In some embodiments, the first defect measurement platform 17321 can be set to a transparent material, the back image acquisition component 17314 can be set below the first defect measurement platform 17321, and the shooting angle of the back image acquisition component 17314 can be set to face the bottom surface of the initial crystal in the first defect measurement platform 17321, so that the back image acquisition component 17314 can capture a second image reflecting the relevant defects of the bottom surface of the initial crystal.

[0558] In some embodiments, as shown in Figures 21 and 23, at least one defect measurement station 1732 also includes a second defect measurement station 17322, and the reverse image acquisition component 17314 is arranged above the second defect measurement station 17322. The second detection component 1730 also includes a second driving member (not shown in Figure 23), a flipping member 1735, a third picking member 1736 and a fourth picking member 1737. The third picking member 1736 is arranged on the flipping member 1735. The third picking member 1736 can pick up the initial crystal on the first defect measurement station 17321; when the third picking member 1736 picks up the initial crystal on the first defect measurement station 17321, the second driving member can drive the flipping member 1735 to rotate around the second rotation axis B, thereby driving the third picking member 1736 to rotate around the second rotation axis B, and the second rotation axis B is parallel to the width direction.

[0559] The second driving member may be a rotary motor, and the flip member 1735 may be a structure connected to the aforementioned rotary motor. Similar to the first picking member 1712, the third picking member 1736 and the fourth picking member 1737 may also be various structures capable of picking up the initial crystal. For example, the third picking member 1736 and / or the fourth picking member 1737 may include a mechanical gripper. For another example, the third picking member 1736 and / or the fourth picking member 1737 may include an air pump and a suction cup, and accordingly, the third picking member 1736 and / or the fourth picking member 1737 may pick up the initial crystal by inflating and deflating air.

[0560] In some embodiments, after the flipping member 1735 drives the third picking member 1736 to rotate about the second rotation axis B by a preset angle, the fourth picking member 1737 can pick up the initial crystal on the third picking member 1736 and place the initial crystal on the second defect measurement stage 17322 for imaging by the reverse image acquisition member 17314. It is understood that after the initial crystal rotates about the second rotation axis B by the flipping member 1735 by a preset angle, its top and bottom surfaces can change. For example, the bottom surface of the initial crystal on the first defect measurement stage 17321 becomes the top surface of the initial crystal on the second defect measurement stage 17322, thereby enabling the reverse image acquisition member 17314 located above the second defect measurement stage 17322 to image the bottom surface of the initial crystal to obtain a second image reflecting the relevant defects on the bottom surface of the initial crystal.

[0561] In some embodiments, the predetermined angle by which the flipping member 1735 drives the third picking member 1736 to rotate about the second rotation axis B can be determined based on the shape of the initial crystal. For example, if the initial crystal is rectangular, the flipping member 1735 can drive the third picking member 1736 to rotate 180° about the second rotation axis B, thereby changing the bottom surface of the initial crystal on the first defect measurement station 17321 to the top surface of the initial crystal on the second defect measurement station 17322.

[0562] In some embodiments, the fourth picking member 1737 can move relative to the second defect measurement platform 17322, so that the fourth picking member 1737 can place the initial crystal on the second defect measurement platform 17322 and then leave, so that the reverse image acquisition member 17314 can capture the initial crystal on the second defect measurement platform 17322 to avoid obstruction. For example, the second defect measurement platform 17322 can be fixed, and the fourth picking member 1737 can be set on one or more tracks and can move along the extension direction of the one or more tracks. For more information about the fourth picking member 1737 being set on the track, please refer to the relevant content about the first image acquisition member 1721 and / or the size measurement platform 1722 being set on the track.

[0563] In some embodiments, the back image capture component 17314 and the second defect measurement platform 17322 can move relative to each other, allowing the back image capture component 17314 to capture images of the initial crystal on the second defect measurement platform 17322. For example, the back image capture component 17314 and / or the second defect measurement platform 17322 can be positioned on one or more tracks and can move along the extension direction of the one or more tracks. For more information on positioning the back image capture component 17314 and / or the second defect measurement platform 17322 on tracks, please refer to the relevant information regarding positioning the first image capture component 1721 and / or the dimension measurement platform 1722 on tracks.

[0564] It is worth noting that when photographing defects in the initial crystal, a relatively large number of components are required. If the position (e.g., placement angle) of the initial crystal on the defect measurement table 1732 is adjusted using the mobile component 1710, a large movement space must be reserved for the mobile component 1710, which can also easily damage other components. In some embodiments of this specification, the aforementioned arrangement can achieve the swapping between the top and bottom surfaces of the initial crystal within a relatively small space, so that defects in different directions of the initial crystal can be photographed. This can reduce the volume of the crystal inspection device 1700 and provide a more comprehensive assessment of the defect data of the initial crystal.

[0565] In some embodiments, the second detection component 1730 also includes multiple light sources. For each second image acquisition component 1731, a light source is provided in the shooting direction of the second image acquisition component 1731, and the distance between the light source and the second image acquisition component 1731 is greater than the distance between the initial crystal and the second image acquisition component 1731. Thus, the initial crystal can be illuminated in different directions based on the aforementioned light source, which can enhance the contrast between the surface defects of the initial crystal and the surrounding areas, so that the defects of the initial crystal can be captured more clearly.

[0566] For example, as shown in FIG20 , a first light source 17381 is provided in the shooting direction of the front image acquisition component 17311. The first light source 17381 is provided below the first defect measurement platform 17321. When the front image acquisition component 17311 photographs the initial crystal on the first defect measurement platform 17321, the first light source 17381 can illuminate the initial crystal on the first defect measurement platform 17321, thereby enhancing the contrast between the surface defects of the initial crystal and the surrounding area, so that the defects of the initial crystal can be captured more clearly. Similarly, a second light source 17382 can be provided in the shooting direction of the long side image acquisition component 17312, a third light source 17383 can be provided in the shooting direction of the short side image acquisition component 17313, and a fourth light source 17384 can be provided in the shooting direction of the back side image acquisition component 17314.

[0567] In some embodiments, one or more of the multiple light sources can be moved relative to the defect measurement stage 1732 to adjust the illuminated area and illumination intensity to meet different lighting requirements. For example, the light source and / or defect measurement stage 1732 can be mounted on one or more tracks and can be moved along the extension direction of the one or more tracks. For more information about the arrangement of the light source and / or defect measurement stage 1732 on tracks, please refer to the relevant information about the arrangement of the first image acquisition component 1721 and / or the dimension measurement stage 1722 on tracks.

[0568] In some embodiments, the image to be identified may include one or more of the first image, the second image, and the third image acquired by the crystal inspection device 1700. The crystal processing device may analyze and process one or more of the first image, the second image, and the third image to determine the size data and defect data of the initial crystal. For more information about the image to be identified and how to determine the size data and defect data of the initial crystal, please refer to the relevant description above in this specification.

[0569] While the basic concepts have been described above, it will be apparent to those skilled in the art that the detailed disclosure is merely illustrative and does not limit this specification. Although not explicitly stated herein, various modifications, improvements, and revisions to this specification may be made by those skilled in the art. Such modifications, improvements, and revisions are suggested in this specification and remain within the spirit and scope of the exemplary embodiments of this specification.

[0570] This specification also uses specific terms to describe the embodiments of this specification. For example, "one embodiment," "an embodiment," and / or "some embodiments" refer to a feature, structure, or characteristic associated with at least one embodiment of this specification. Therefore, it should be emphasized and noted that references to "one embodiment," "an embodiment," or "an alternative embodiment" two or more times in different locations in this specification do not necessarily refer to the same embodiment. Furthermore, certain features, structures, or characteristics of one or more embodiments of this specification may be appropriately combined.

[0571] In addition, unless expressly stated in the claims, the order of the processing elements and sequences, the use of alphanumeric characters, or the use of other names described in this specification are not intended to limit the order of the processes and methods of this specification. Although the above disclosure discusses some of the invention embodiments currently considered useful through various examples, it should be understood that such details are for illustrative purposes only, and the appended claims are not limited to the disclosed embodiments. On the contrary, the claims are intended to cover all modifications and equivalent combinations that are consistent with the spirit and scope of the embodiments of this specification. For example, although the system components described above can be implemented by hardware devices, they can also be implemented only by software solutions, such as installing the described system on an existing server or mobile device.

[0572] Similarly, it should be noted that, in order to simplify the presentation of this specification and thus facilitate understanding of one or more embodiments of the invention, the foregoing descriptions of the embodiments of this specification sometimes combine multiple features into a single embodiment, figure, or description thereof. However, this disclosure method does not imply that the subject matter of this specification requires more features than those recited in the claims. In fact, an embodiment may have fewer features than all of the features of a single disclosed embodiment.

[0573] In some embodiments, numbers are used to describe the quantity of components and attributes. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise stated, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the description and claims are approximate values, which may change according to the required characteristics of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of this specification are approximate values, in specific embodiments, the settings of such numerical values ​​are as accurate as possible within the feasible range.

[0574] Each patent, patent application, patent application publication, and other materials, such as articles, books, specifications, publications, and documents, cited in this specification is hereby incorporated by reference in its entirety. This includes application history documents that are inconsistent with or conflict with the content of this specification, as well as documents (currently or subsequently attached to this specification) that limit the broadest scope of the claims of this specification. It should be noted that if the descriptions, definitions, and / or terminology used in the accompanying materials are inconsistent or conflicting with the content of this specification, the descriptions, definitions, and / or terminology used in this specification will control.

[0575] Finally, it should be understood that the embodiments described in this specification are intended only to illustrate the principles of the embodiments of this specification. Other variations may also fall within the scope of this specification. Therefore, by way of example and not limitation, alternative configurations of the embodiments of this specification may be considered consistent with the teachings of this specification. Accordingly, the embodiments of this specification are not limited to the embodiments explicitly described and illustrated in this specification.

Claims

1. A crystal processing method, comprising: Obtaining initial crystals; A processing scheme for the initial crystal is determined, and the initial crystal is processed based on the processing scheme.

2. The method according to claim 1, wherein the number of the initial crystals is multiple, the processing scheme comprises an assembly scheme for assembling the initial crystals into a crystal array, and the determining the processing scheme for the initial crystals and processing the initial crystals based on the processing scheme comprises: determining an assembly scheme for assembling a plurality of initial crystals into the crystal array; Pre-processing a plurality of initial crystals based on the assembly scheme to obtain a plurality of target crystals; The plurality of target crystals are assembled into a crystal array, wherein a reflection structure is provided between at least two adjacent target crystals in the crystal array. The method according to claim 2 , wherein the reflective structure comprises a reflective filling material and / or a reflective film. 4 . The method according to claim 3 , wherein the reflective filling material comprises a compound, and the compound is a barium compound, a titanium compound, or a mixture of a barium compound and a titanium compound.

5. The method according to claim 4, wherein the reflective filling material is prepared from glue, water and the compound according to the raw material ratio of (1-3): (0-2): (5-7); The preparation method of the reflective filling material comprises: According to the raw material ratio, determining the first mass of glue, the second mass of water, and the third mass of the compound; Putting the first mass of glue into a preparation container, putting the second mass of water into the preparation container, and stirring; adding a preset mass of the compound to the configuration container at a preset time interval and stirring at a preset stirring rate, wherein the preset mass is less than or equal to the third mass; After all the compounds of the third mass are placed in the configuration container, stirring is continued for a preset time to obtain the reflective filling material.

6. The method according to claim 4, wherein the volume of the solid particles in the reflective filling material is less than 0.2 mm 3 and / or, The surface roughness Ra of the reflective structure formed by the reflective filling material is less than 100 μm.

7. The method of claim 3, wherein assembling the plurality of target crystals into a crystal array comprises: The plurality of target crystals are bonded and assembled into a crystal array.

8. The method according to claim 7, wherein the bonding and assembling method comprises: The plurality of target crystals are bonded together using the reflective filling material to form an initial crystal array, and the thickness of the reflective filling material is less than 1.5 mm.

9. The method according to claim 7, wherein the bonding and assembling method comprises: an arranging step, arranging a plurality of the target crystals into a row to form a crystal row; A coating step, coating the crystal row with glue so that one side of the reflective film is attached to one side of the crystal row, and the reflective film covers each of the target crystals in the crystal row; The pasting step is to apply glue on the other side of the reflective film and paste another crystal row on the other side of the reflective film.

10. The method according to claim 9, wherein the bonding and assembling method comprises: The film coating step and the pasting step are repeated to form an initial crystal array.

11. The method according to claim 9, wherein the reflective film completely covers the corresponding side surface of each of the target crystals in the crystal row; or, the reflective film partially covers the corresponding side surface of at least one of the target crystals in the crystal row.

12. The method according to any one of claims 8 to 11, wherein the bonding and assembling method further comprises: Performing grinding and / or polishing on the first surface and the second surface of the initial crystal array, wherein the first surface and / or the second surface are light emitting surfaces, and the first surface and the second surface are opposite surfaces; The other side surfaces are coated with the reflective filling material to form a reflective layer covering the other side surfaces of the initial crystal array; the other side surfaces are the side surfaces of the initial crystal array except the first surface and the second surface; The side surfaces of the initial crystal array except the light-emitting surface are wrapped with at least one protective layer to obtain the crystal array. 13 . The method according to claim 12 , wherein when the first surface and the second surface of the initial crystal array are ground and / or polished, the surface roughness Ra of the first surface is less than 10 μm.

14. The method according to claim 2, before assembling the plurality of target crystals into a crystal array, comprises the following steps: detecting light output performance of the plurality of target crystals; Based on the light output performance, arrangement positions of the plurality of target crystals are determined.

15. The method of claim 14, wherein determining the arrangement positions of the plurality of target crystals based on the light output performance comprises: Determining initial arrangement positions of the plurality of target crystals; Based on the initial arrangement position and the light output performance, determining the arrangement position by a position determination model; The location determination model is a machine learning model.

16. The method according to claim 14, wherein the light output performance comprises light yield; the light yield of any of the target crystals within the edge range of the crystal array is equal to or higher than the average light yield of the target crystals within the inner range.

17. The method of claim 14, wherein the light output performance comprises a relative light yield difference, and the relative light yield difference between any two target crystals in the crystal array is no greater than 3600 Ph / Mev.

18. The method according to claim 2, wherein the pretreatment comprises one or more of a grinding treatment and a polishing treatment.

19. The method of claim 1, wherein determining a processing scheme for the initial crystal comprises: Determining relevant information of the initial crystal; The processing scheme is determined based on the relevant information of the initial crystal.

20. The method of claim 19, wherein the information related to the initial crystal comprises an initial light output value and a target light output value of the initial crystal, and the processing scheme comprises a light adjustment scheme for adjusting the light output value of the initial crystal. Determining the processing scheme based on the relevant information of the initial crystal includes: Determining a light adjustment scheme for the initial crystal based on the initial light output value and the target light output value; The processing of the initial crystal based on the processing scheme includes: Based on the light adjustment scheme, at least one outer surface of the initial crystal is processed to change the surface roughness so that the actual light output value of the initial crystal is changed from the initial light output value to the target light output value, and the surface roughness Ra of the at least one outer surface after the surface roughness is changed is in the range of 0.001μm to 10μm. 21 . The method according to claim 20 , wherein the surface roughness Ra of the at least one outer surface after the surface roughness is changed is in the range of 0.001 μm to 0.1 μm.

22. The method of claim 20, wherein the at least one outer surface of the initial crystal comprises an end face and one or more side faces of the initial crystal, and the determining the light adjustment scheme of the initial crystal based on the initial light output value and the target light output value comprises: When the target light output value is greater than the initial light output value, determining the light adjustment scheme includes performing a process for increasing the surface roughness of one or more sides of the initial crystal; When the target light output value is less than the initial light output value, determining the light adjustment scheme includes performing a process to reduce surface roughness of one or more sides of the initial crystal.

23. The method of claim 20, wherein at least one outer surface of the initial crystal comprises an end face and one or more side faces of the initial crystal, and the light adjustment scheme comprises machining the surface roughness of each side face of the initial crystal to the target surface roughness of the side face, The determining of the light adjustment scheme of the initial crystal based on the initial light output value and the target light output value comprises: Based on one or more of the target light output value, the initial light output value of the initial crystal, the size of the initial crystal, the composition of the initial crystal, and the initial surface roughness of each side of the initial crystal, the target surface roughness of each side of the initial crystal is correspondingly determined; and the surface roughness of each side of the initial crystal is processed to the target surface roughness.

24. The method of claim 20, wherein the initial crystal is a scintillation crystal, and the initial crystal comprises at least two of Lu, Si, Y, Ca, Mg, Al, Ga, Sc, In, La, Br, Ba, S, Sn, Zn, Zr, Hf, Cd, Pb, Eu, Ce, Bi, Ge, I, Na, Cs, and Cu.

25. The method of claim 9, wherein the information related to the initial crystal comprises identification results of one or more initial crystals, wherein the identification results comprise at least one of size data, position data, and defect data of the one or more initial crystals. The information related to determining the initial crystal includes: Acquiring an image to be identified related to the one or more initial crystals; Performing image recognition on the image to be recognized to determine recognition results of the one or more initial crystals, Determining the processing scheme based on the relevant information of the initial crystal includes: Based on the identification result, a treatment plan for the one or more initial crystals is determined.

26. The method of claim 25, wherein acquiring images to be identified related to one or more initial crystals comprises: Acquire the image to be identified of the tray containing the one or more initial crystals; The position data includes first position data of the one or more initial crystals on the tray, and performing image recognition on the image to be recognized to determine the recognition result of the one or more initial crystals includes: Performing image recognition on the image to be recognized to determine the size data and the first position data of the one or more initial crystals; The processing scheme includes a first adjustment scheme for adjusting the one or more initial crystals placed on the tray, and the processing scheme for determining the one or more initial crystals based on the recognition result includes: The first adjustment scheme is determined based on the configuration target of the material tray, the size data of the one or more initial crystals, and the first position data.

27. The method of claim 25, wherein the defect data comprises first defect data characterizing defects of the initial crystal itself, and the performing image recognition on the image to be recognized and determining the recognition results of the one or more initial crystals comprises: Performing image recognition on the image to be recognized to determine the size data and the first defect data of the one or more initial crystals; The processing scheme includes a cutting scheme for cutting the one or more initial crystals, and the determining of the processing scheme for the one or more initial crystals based on the recognition result includes: obtaining a first cutting target for the one or more initial crystals; For each initial crystal, a cutting plan for the initial crystal is determined based on the size data of the initial crystal, the first defect data, and the first cutting target.

28. The method of claim 27, wherein determining a cutting plan for the initial crystal based on the size data of the initial crystal, the first defect data, and the first cutting target comprises: Determine a plurality of candidate cutting schemes based on the size data of the initial crystal, the first defect data, and the first cutting target; For each candidate cutting solution, Determining a unit score of each cut crystal unit based on the candidate cutting scheme, the size data of the initial crystal, and the first defect data; Determine a solution score of the candidate cutting solution based on the unit scores of each crystal unit; Based on the plan scores of the candidate cutting plans, the cutting plan of the initial crystal is determined.

29. The method of claim 28, wherein determining the plan score of the candidate cutting plan based on the unit score of each crystal unit comprises: Obtaining a second cutting target for cutting the initial crystal; Based on the second cutting target, determining the quantity weight and the quality weight of the crystal unit; The plan score of the candidate cutting plan is determined based on the quantity weight, the quality weight, the number of the crystal units, and the unit score.

30. The method of claim 25, wherein the initial crystal comprises a crystal array composed of a plurality of crystal units, and the acquiring of the image to be identified related to one or more initial crystals comprises: Acquire the image to be identified related to a crystal array composed of a plurality of crystal units, wherein at least two adjacent crystal units in the crystal array have a reflection structure between them; The position data includes second position data characterizing the relative positions of the plurality of crystal units in the crystal array, the defect data includes second defect data and third defect data, the second defect data is data characterizing defects of the crystal units themselves in the crystal array, and the third defect data is data characterizing defects in the crystal array, and the image recognition is performed on the image to be recognized to determine the recognition results of the one or more initial crystals, including: Performing image recognition on the image to be recognized to determine the second position data, the second defect data and the third defect data; The processing scheme includes a second adjustment scheme for adjusting the crystal unit and / or the reflective structure in the initial crystal, and the processing scheme for determining the one or more initial crystals based on the identification result includes: The second adjustment solution is determined based on the second position data, the second defect data and the third defect data.

31. The method of claim 30, further comprising: Based on the second adjustment scheme, the crystal units and / or the reflective structures in the crystal array are adjusted by a robotic arm to complete the packaging of the crystal array.

32. The method of claim 25, wherein acquiring images to be identified related to one or more initial crystals comprises: Acquiring the to-be-identified images of the one or more initial crystals under light sources of multiple different colors; The performing image recognition on the image to be recognized and determining the recognition result of the one or more initial crystals comprises: Performing image recognition on the to-be-recognized images corresponding to the multiple light sources of different colors to determine multiple candidate recognition results of the one or more initial crystals; Based on the plurality of candidate identification results, identification results of the one or more initial crystals are determined.

33. The method of claim 25, wherein acquiring images to be identified related to one or more initial crystals comprises: For each initial crystal, determining the crystal color of the initial crystal; The complementary color corresponding to the color of the crystal is used as a light source to illuminate the initial crystal, and an image to be identified corresponding to the initial crystal is obtained.

34. The method of claim 25, wherein acquiring images to be identified related to one or more initial crystals comprises: For each of the one or more initial crystals, acquiring a crystal image of the initial crystal under an initial light source; Performing image recognition on the crystal image to obtain a crystal segmentation result of the initial crystal; When the crystal segmentation result indicates that the initial crystal is complete, determining the crystal image as the image to be identified of the initial crystal; When the crystal segmentation result indicates that the initial crystal is not completely displayed, Repeat the process of adjusting the light source angle to obtain a crystal image of the initial crystal under the adjusted light source, perform image recognition on the crystal image under the adjusted light source to obtain a new crystal segmentation result, and fuse the previously obtained crystal segmentation results until the fused crystal segmentation result represents a complete display of the crystal, and then determine the image to be identified based on the previously obtained crystal image of the initial crystal.

35. A crystal detection device, comprising: A first moving component comprises a moving member and a first picking member, wherein the first picking member is arranged on the moving member, the first picking member picks up an initial crystal, and the moving member adjusts a position and / or an angle of the first picking member; A first detection component includes a first image acquisition component and a size measurement platform, wherein the size measurement platform carries the initial crystal, and the first image acquisition component photographs the initial crystal on the size measurement platform to obtain at least one first image of the initial crystal, wherein the at least one first image is used to determine size data of the initial crystal; The second detection component includes at least one second image acquisition component and at least one defect measurement platform. The at least one defect measurement platform carries the initial crystal. The at least one second image acquisition component photographs the initial crystal on the defect measurement platform to obtain at least one second image of the initial crystal. The at least one second image is used to determine the defect data of the initial crystal.

36. The device of claim 35, wherein the first picking member comprises an air pump and a suction cup, wherein the air pump is connected to the suction cup, and the suction cup is capable of contacting the initial crystal. The air pump evacuates air to control the suction cup to absorb the initial crystal, and the air pump inflates air to control the suction cup to release the initial crystal.

37. The device according to claim 36, wherein the crystal detection device further comprises a third image acquisition component, The third image acquisition component photographs the area where the initial crystal is located to obtain a third image, and the third image is used to determine the position of the initial crystal.

38. The device of claim 35, wherein the first detection assembly further comprises a first track, a second track and a third track, wherein: The first track, the second track and the third track are perpendicular to each other. At least one of the first image acquisition component and the dimension measuring platform is disposed on the first track and is capable of moving along an extension direction of the first track; At least one of the first image acquisition component and the dimension measuring platform is disposed on the second track and is capable of moving along an extension direction of the second track; At least one of the first image acquisition component and the dimension measuring platform is disposed on the second track and is movable along an extension direction of the third track.

39. The apparatus of claim 35, wherein the at least one second image comprises a plurality of images reflecting defects in the initial crystal from different directions. The at least one second image acquisition component includes a front image acquisition component and a side image acquisition component, and the at least one defect measurement platform includes a first defect measurement platform. The front image acquisition component is arranged above the first defect measurement platform, and is used to photograph the top surface of the initial crystal to obtain the second image; The side image acquisition component is arranged on the side of the first defect measurement platform, and is used to photograph the peripheral surface of the initial crystal to obtain the second image.

40. The device as described in claim 39, wherein the side image acquisition component includes a long side image acquisition component and a short side image acquisition component, and the long side image acquisition component and the short side image acquisition component are arranged on different sides of the defect measurement platform, and the shooting angles of the long side image acquisition component and the short side image acquisition component are vertical.

41. The device according to claim 39, wherein the second detection assembly further comprises a first driving member, a rotating member, and a second picking member, wherein the second picking member is disposed on the rotating member. The first driving member drives the rotating member to rotate around the first rotating axis, thereby driving the second picking member to rotate around the first rotating axis, wherein: The first rotation axis is parallel to the height direction; The second picking member picks up the initial crystal placed on the first defect measurement stage, and puts the rotated initial crystal back onto the first defect measurement stage.

42. The device according to claim 39, wherein the second image acquisition component further comprises a back surface image acquisition component, and the back surface image acquisition component photographs the back surface of the initial crystal to obtain the second image.

43. The device according to claim 42, wherein the at least one defect measurement station further comprises a second defect measurement station, and the reverse image acquisition component is disposed above the second defect measurement station. The second detection assembly further includes a second driving member, a flip member, a third picking member and a fourth picking member, wherein the third picking member is disposed on the flip member. The third picking member picks up the initial crystal on the first defect measurement stage; The second driving member drives the flip member to rotate around the second rotation axis, thereby driving the third picking member to rotate around the second rotation axis, and the second rotation axis is parallel to the width direction; After the flipping member drives the third picking member to rotate around the second rotation axis by a preset angle, the fourth picking member picks up the initial crystal on the third picking member and places the initial crystal on the second defect measurement table for the reverse image acquisition member to shoot.

44. The device according to any one of claims 39 to 43, wherein the second detection assembly further comprises a plurality of light sources. For each second image acquisition component, a light source is arranged in the shooting direction of the second image acquisition component, and the distance between the light source and the second image acquisition component is greater than the distance between the initial crystal and the second image acquisition component.

45. A crystal light output control system, comprising a controller and a processing device, The controller is configured to: Obtaining an initial light output value of the initial crystal; determining a target light output value of the initial crystal; The processing equipment is configured as follows: Determining a light adjustment scheme for the initial crystal based on the initial light output value and the target light output value; Based on the light adjustment scheme, at least one outer surface of the initial crystal is processed to change the surface roughness so that the actual light output value of the initial crystal is changed from the initial light output value to the target light output value, and the surface roughness Ra of the at least one outer surface after the surface roughness is changed is in the range of 0.001μm to 10μm.

46. ​​The method according to claim 45, wherein the surface roughness Ra of the at least one outer surface after the surface roughness is changed is in the range of 0.001 μm to 0.1 μm.

47. A crystal assembly method, the method comprising: Arranging a plurality of target crystals in an array to form a crystal array; wherein the processing method of the plurality of target crystals comprises: Obtaining multiple initial crystals; determining an initial light output value of each of the initial crystals in the plurality of initial crystals; Determining a target light output value corresponding to each of the initial crystals based on the initial light output value of each of the initial crystals; Determining a light adjustment scheme for the initial crystal based on the initial light output value and the target light output value; Based on the light adjustment scheme, at least one outer surface of one or more of the multiple initial crystals is processed to change the surface roughness, so that the actual light output value of each of the initial crystals reaches the corresponding target light output value, so as to form the multiple target crystals.

48. The method of claim 47, wherein the difference in surface roughness Ra between any two side surfaces of any target crystal is less than 0.15 μm.

49. The method of claim 47, wherein a difference between the target light output values ​​corresponding to any two of the initial crystals is less than 10% of the target light output value of any one of the two initial crystals.

50. A crystal array, characterized in that: The crystal array is assembled by the method according to any one of claims 44 to 46.

51. The crystal array of claim 50, wherein: The target crystals in the crystal array contain a trivalent Ce element and a tetravalent Ce element; the content ratio of the trivalent Ce element to the tetravalent Ce element in at least two of the target crystals in the crystal array is different; Furthermore, the surface roughness of at least one group of corresponding side surfaces of the two target crystals is different.

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