Heat transfer system for an extreme ultraviolet radiation utilization apparatus, method of manufacturing the heat transfer system, and heat transfer method for an extreme ultraviolet radiation utilization apparatus

Abstract

A heat transfer system and method for extreme ultraviolet radiation sources and / or lithography apparatus are described. The following are provided: a body; a heater configured to heat the body; and a heat transfer portion, using a cold spray technique, which is directly bonded to the body. The heat transfer portion is configured to connect the heater to the body and facilitate heat transfer through the body. The cold spray technique includes cryogenic ultrasonic and / or hypersonic spray nozzles configured to spray various materials, such as stainless steel powder, copper or copper-based powder, nickel powder, and / or tin powder, to directly bond the heat transfer portion to the body. The cold spray technique relies on the high speed of the metal powder, which is plastically deformed and physically bonded upon contact with the body. The body may include steel; and the heat transfer portion may include copper, copper and diamond, copper and alumina, or copper and silicon carbide.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to U.S. Application 63 / 601,794, filed November 22, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] In some aspects, this specification relates to heat transfer systems for extreme ultraviolet (EUV) radiation utilization devices and methods for manufacturing such heat transfer systems. In other aspects, this specification relates to heat transfer methods for extreme ultraviolet (EUV) radiation utilization devices. Background Technology

[0004] Photolithography equipment (also referred to herein as photolithography apparatus) can be used, for example, to manufacture integrated circuits (ICs). Patterning apparatus (e.g., a mask) can include or provide a pattern corresponding to a separate layer of the IC (“design layout”), and the pattern can be transferred onto a target portion (e.g., comprising one or more dies) by means of irradiating a substrate (e.g., a silicon wafer) coated with a layer of radiation-sensitive material (“resist”) through the pattern on the patterning apparatus. Generally, a single substrate comprises multiple adjacent target portions, and the pattern is continuously transferred to these adjacent target portions one at a time by the photolithography apparatus. In one type of photolithography projection apparatus, the pattern on the entire patterning apparatus is transferred onto a single target portion in one operation. Such apparatus is commonly referred to as a stepper. In an alternative apparatus, commonly referred to as a step-scan apparatus, the substrate is moved synchronously, parallel or antiparallel to the reference direction, while the projection beam scans the patterning apparatus in a given reference direction (“scan” direction). Different portions of the pattern on the patterning apparatus are gradually transferred to a single target portion.

[0005] Before the pattern is transferred from the patterning apparatus to the substrate, the substrate may undergo various processes, such as primer coating, resist coating, and soft baking. After exposure, the substrate may undergo other processes (“post-exposure processes”), such as post-exposure baking (PEB), development, hard baking, and measurement / inspection of the transferred pattern. This array of processes serves as the basis for fabricating individual layers of devices (e.g., ICs). The substrate may then undergo various processes, such as etching, ion implantation (doping), metallization, oxidation, deposition, chemical mechanical polishing, etc., all intended to refine the individual layers of the device. If several layers are required in the device, the entire process or a variation thereof is repeated for each layer. Ultimately, a device will be present in each target portion of the substrate. These devices are then separated from each other using techniques such as dicing or sawing, allowing individual devices to be mounted on carriers, connected to pins, etc.

[0006] Therefore, manufacturing devices such as semiconductor devices typically involves processing a substrate (e.g., a semiconductor wafer) using multiple fabrication processes to form various features and multiple layers of the device. Such layers and features are typically fabricated and processed using processes such as deposition, photolithography, etching, chemical mechanical polishing, and ion implantation. Multiple devices can be fabricated on multiple dies on a substrate, and these devices can then be separated into individual devices. This device fabrication process can be viewed as a patterning process. A patterning process involves using patterning apparatus in a photolithography apparatus, such as optical and / or nanoimprint lithography, to perform patterning steps to transfer a pattern from the patterning apparatus to the substrate. The patterning process typically, but optionally, involves one or more associated patterning processing steps, such as resist development using a developing apparatus, baking the substrate using a baking tool, etching using an etching apparatus and depositing the pattern.

[0007] Photolithography is a central step in the fabrication of devices such as integrated circuits (ICs), in which patterns formed on a substrate define the functional elements of the device, such as microprocessors and memory chips. Similar photolithography techniques are also used to form flat panel displays, microelectromechanical systems (MEMS), and other devices.

[0008] As semiconductor manufacturing processes have evolved, the size of functional components has shrunk over the decades, while the number of functional components, such as transistors, per device has increased, following a trend commonly known as "Moore's Law." In the current state of technology, photolithography equipment is used to fabricate device layers. This equipment projects a design layout onto a substrate using irradiation from an extreme ultraviolet (EUV) radiation source, resulting in individual functional components with a size sufficiently smaller than 100 nm (i.e., less than half the wavelength of the radiation from the source).

[0009] To overcome the difficulty of forming small features in patterns, complex fine-tuning steps are applied to the radiation source, lithography equipment, design layout, or patterning apparatus. Controllable and / or otherwise predictable heat transfer to and / or to various components of the radiation source and / or lithography equipment is important for these fine-tuning steps and / or other aspects of the patterning process. Summary of the Invention

[0010] In a first aspect, a heat transfer system for an extreme ultraviolet (EUV) radiation utilization device is provided. The system includes: an EUV radiation utilization device housing comprising a stainless steel body; and a copper portion directly bonded to the stainless steel body. The copper portion is configured to facilitate heat transfer through the stainless steel body.

[0011] The copper portion can be directly bonded to the stainless steel body using cold spraying technology. The grain structure of the copper portion and / or the stainless steel body can exhibit the effect of cold spraying at acute angles within the grain structure, and / or include detectable AlO₂ in the copper portion caused by cold spraying. x Abrasive.

[0012] Using brazing with solder that can be detected at the stainless steel-copper interface, by fusion, or by electroplating, the copper portion can be directly bonded to the stainless steel body.

[0013] The system may include one or more heaters configured to heat the stainless steel body and copper portions. The one or more heaters include one or more heat sources.

[0014] The stainless steel body may include one or more chambers configured to house one or more heaters. The one or more chambers may include one or more recesses.

[0015] The copper section can be configured to cover one or more heaters and to connect one or more heaters to the stainless steel body.

[0016] The copper portion may include one or more recesses within a stainless steel body. The one or more recesses may be positioned directly adjacent to one or more heaters. Optionally, the one or more recesses may be capped with a stainless steel layer, deposited using a cold spray technique to encapsulate the copper portion. The grain structure of the stainless steel layer may exhibit the effect of cold spraying at acute angles within the grain structure.

[0017] The stainless steel layer can be welded to the stainless steel body.

[0018] One or more recesses may be located between one or more heaters.

[0019] One or more heaters can be brazed to the stainless steel body.

[0020] The stainless steel body can be formed by cold spraying, additive manufacturing, and / or machining.

[0021] The first side of the stainless steel body, opposite to the second side including the copper portion, can be configured to face the tin-rich environment in the EUV radiation utilization equipment. Optionally, the system may include: a titanium nitride (TiN) coating located on the first and / or second side of the stainless steel body; and / or an electroless nickel (Ni) layer and / or an electroplated tin (Sn) layer formed on the first side of the stainless steel body. Additionally or alternatively, the system may include a molybdenum layer formed on the first and / or second side.

[0022] Radiation utilization equipment may include EUV radiation sources, inspection tools, lithography equipment, and / or other EUV radiation utilization equipment.

[0023] In another aspect, a heat transfer system for an extreme ultraviolet (EUV) radiation utilization device is provided. The system includes: a main body; one or more heaters configured to heat the main body; and a heat transfer section, which is directly bonded to the main body using a cold spraying technique. The heat transfer section is configured to connect one or more heaters to the main body and facilitate heat transfer through the main body.

[0024] The main body may include stainless steel or low carbon steel; and the heat transfer part may include copper, copper and diamond, copper and alumina, or copper and silicon carbide.

[0025] In another aspect, a method for manufacturing the heat transfer system described above is provided, the heat transfer system being used in the extreme ultraviolet (EUV) radiation utilization device described above.

[0026] In other respects, one or more corresponding heat transfer methods are provided, including one or more of the operations described above. Attached Figure Description

[0027] The above aspects, as well as other aspects and features, will become apparent to those skilled in the art after reviewing the following description of specific embodiments in conjunction with the accompanying drawings.

[0028] Figure 1 A schematic depiction of a first example of a radiation source and a photolithography device.

[0029] Figure 2 A second example of a radiation source and photolithography equipment is shown.

[0030] Figure 3 for Figure 2 A detailed view of the collector for the source is shown.

[0031] Figure 4 The illustration shows a source for extreme ultraviolet (EUV) radiation (e.g., such as...). Figures 1 to 3 (as shown) or lithography equipment (e.g., such as) Figure 1 and Figure 2 (As shown) heat transfer system.

[0032] Figure 5 An example of a cold spray technology system is illustrated.

[0033] Figure 6 The illustration shows the advantageous and flexible nature of cold spray technology.

[0034] Figure 7The diagram shows... Figure 4 An example of a heat transfer system is shown, wherein the heat transfer portion (e.g., a copper portion) is included within one or more recesses within a body (e.g., stainless steel).

[0035] Figure 8 The diagram shows... Figure 4 Another example of a heat transfer system shown is in which one or more recesses are located between one or more heaters.

[0036] Figure 9 The illustration shows a heat transfer method.

[0037] Figure 10 This is a block diagram of an exemplary computer system. Detailed Implementation

[0038] This invention describes a heat transfer system and method for extreme ultraviolet radiation sources and / or lithography equipment. The following are provided: a body; a heater configured to heat the body; and a heat transfer portion, using a cold spray technique, which is directly bonded to the body. The heat transfer portion is configured to connect the heater to the body and facilitate heat transfer through the body. The cold spray technique includes cryogenic ultrasonic and / or hypersonic spray nozzles configured to spray various materials, such as stainless steel powder, copper or copper-based powder, nickel powder, and / or tin powder, to directly bond the heat transfer portion to the body. Advantageously, the cold spray technique relies on the high speed of the metal powder, which is plastically deformed and physically bonded upon contact with the body. This allows the cold spray technique to be flexibly adapted for directly bonding the heat transfer portion to the body. For example, the body may include steel; and the heat transfer portion may include copper, copper and diamond, copper and alumina, or copper and silicon carbide.

[0039] As described above, controllable and / or otherwise predictable heat transfer to and / or through the various components of the radiation source and / or lithography equipment is important for fine-tuning steps and / or other aspects of the patterning process. As an example, tin (e.g., fuel used in extreme ultraviolet (EUV) radiation generation as described below) tends to collect on the surface of the EUV source cavity and requires periodic removal. Tin collection can be managed by maintaining the tin-facing surfaces at a target temperature, cycling the temperature of the tin-facing surfaces (causing the tin to melt and flow from these surfaces), and / or through other operations. Therefore, the materials chosen for these tin-facing surfaces need to be highly thermally conductive and compatible with atomic hydrogen (which flows within the source cavity as part of the radiation generation process), EUV, and molten tin.

[0040] For example, blades used in current EUV sources include tin, nickel, stainless steel, copper, and stainless steel stacks. The EUV-facing side of the stack has a thin coating layer configured to receive incident tin generated as a byproduct of EUV production. The stack is configured to operate in a "hot" mode above the melting temperature of tin for better tin flow and removal, but the stack must also be able to operate in a "cold" mode below the melting temperature of tin to mitigate the recombination of hydrogen with molten tin, which forms periodically bursting bubbles. These bursts can send tin into unwanted areas of the radiation source or even downstream lithography equipment, resulting in shortened optics lifetimes (in the radiation source and downstream lithography equipment), high defect rates in masks and / or other patterning apparatus, and other problems.

[0041] Typical stack-ups require numerous manufacturing steps, making them among the most difficult tin management hardware to produce. Typical stack-ups are also very expensive, and the lead time for obtaining them is typically very long. Furthermore, only a limited number of geometries can be applied to tin, nickel, stainless steel, copper, and stainless steel stacks, and the material combinations available for stack-ups are limited by gravity and a wide process temperature operating range (which can potentially exceed 900°C), among other factors.

[0042] Advantageously, this system and method utilize cold spraying technology to directly bond thermally conductive surfaces for use, wherein controllable and / or otherwise predictable heat transfer to and / or through various components (e.g., for the stacks described above, or other components) is helpful, for example, EUV radiation sources and / or lithography equipment. The following are provided: a body; a heater configured to heat the body; and a heat transfer portion, which is directly bonded to the body using cold spraying technology. The cold spraying technology includes cryogenic ultrasonic and / or hypersonic spray nozzles configured to spray various materials to directly bond the heat transfer portion to the body. Cold spraying technology relies on the high speed of metal powder, which is plastically deformed and physically bonded upon contact with the body. This allows the cold spraying technology to be flexibly adapted for directly bonding heat transfer portions to the body.

[0043] Furthermore, cold spraying technology allows for the cost-effective covering of complex freeform metal shapes with materials possessing high thermal conductivity, which would otherwise be expensive, cumbersome, or impossible. Cold spray coatings can also simultaneously thermally and spatially integrate heating elements to freeform surfaces. For example, 316(L) stainless steel has good liquid tin (Sn) resistance (suitable for EUV-related applications) but poor thermal conductivity (e.g., 14 W / mK to 16 W / mK). In some locations within high-volume EUV radiation sources, substantially high thermal conductivity is required to maintain the desired temperature of the tin-facing surface. The thermal conductivity problem associated with stainless steel can be remedied by backing it with a material possessing excellent thermal conductivity (e.g., copper, 400 W / mK) and a substantially similar coefficient of thermal expansion (CTE, e.g., about 16 PPM / K). In near-vacuum conditions (i.e., the environment within EUV radiation sources), the use of bolts or similar methods to connect components results in poor heat transfer, unsuitable for the purposes of EUV radiation sources (and / or lithography equipment). To optimize heat transfer, materials are physically or chemically bonded. A combination of copper and 316(L) stainless steel (as an example) is a combination with a matched CTE. The matched CTE prevents the combined component from deforming when heated from room temperature to operating temperatures of 150°C, up to 232°C (e.g., the melting point of tin), or even 300°C. For example, adding 1 mm of copper thickness dissipates as much heat as adding 25 mm of 316L thickness. Material combinations, along with manufacturing methods (e.g., cold spraying) that can effectively cover complex free-form stainless steel (as another example material) components with dense pure copper (as another example material), are advantageous. Simultaneously, linking multi-material components with good thermal conductivity and complex shapes to one or more heaters (e.g., again using cold spraying) is another advantage (and many other possible advantages).

[0044] For the sake of brevity, the following description relates to semiconductor device fabrication and patterning processes. While reference may be specifically made herein to the fabrication of integrated circuits (ICs) for semiconductor devices, it should be understood that the description herein has many other possible applications. For example, the description herein can be used to fabricate integrated optical systems, guide and detection patterns for magnetic domain memories, liquid crystal display panels, thin-film magnetic heads, etc. Those skilled in the art will understand that, in the context of such alternative applications, any use of the terms “mask,” “wafer,” or “die” herein should be considered interchangeable with the more general terms “mask,” “substrate,” and “target portion,” respectively.

[0045] The term "projection optics" as used herein should be interpreted broadly to encompass various types of optical systems, including, for example, refractive optics, reflective optics, and aperture and reflective-refractive optics. The term "projection optics" may also include components that operate according to any of these design types for commonly or individually guiding, shaping, or controlling a projected radiation beam. The term "projection optics" can include any optical component in a lithography apparatus, regardless of its location within the optical path of the lithography apparatus. Projection optics can include optical components for shaping, adjusting, and / or projecting radiation from a source before it passes through a patterning apparatus, and / or for shaping, adjusting, and / or projecting radiation after it has passed through the patterning apparatus. Projection optics generally exclude both the source and the patterning apparatus.

[0046] Figure 1 An embodiment of a photolithography apparatus LA is schematically depicted. The apparatus includes: an irradiation system (irradiator) IL configured to modulate a radiation beam B (e.g., EUV radiation); a support structure (e.g., a mask stage) MT configured to support a patterning apparatus (e.g., a mask) MA and connected to a first positioner PM configured to accurately position the patterning apparatus according to certain parameters; a substrate stage (e.g., a wafer stage) WT (e.g., WTa, WTb, or both) configured to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate according to certain parameters; and a projection system (e.g., a refractive projection lens system) PS configured to project a pattern imparted by the radiation beam B by the patterning apparatus MA onto a target portion C (e.g., comprising one or more dies and often referred to as a field) of the substrate W. The projection system PS is supported on a reference frame RF. As depicted, this apparatus is of the transmission type (e.g., using a transmission mask). Alternatively, the device can be of the reflective type (e.g., using a programmable array of mirrors or a reflective mask).

[0047] The irradiator IL receives a radiation beam from the radiation source SO. The source SO and the lithography apparatus LA can be separate entities. In such cases, the source SO is not considered part of the lithography apparatus LA, and the radiation beam is transmitted from the source SO to the irradiator IL by means of a beam delivery system BD, which includes, for example, suitable guiding mirrors and / or beam expanders. In other cases, the source SO can be an integral part of the apparatus. The source SO and the irradiator IL, together with the beam delivery system BD (if necessary), can be referred to as the radiation system.

[0048] An illuminator IL can alter the intensity distribution of the beam. The illuminator can be arranged to limit the radial range of the radiation beam such that the intensity distribution within an annular region in the pupil plane of the illuminator IL is non-zero. Alternatively, the illuminator IL can be operated to limit the beam distribution in the pupil plane such that the intensity distribution in multiple equally spaced segments within the pupil plane is non-zero. The intensity distribution of the radiation beam in the pupil plane of the illuminator IL can be referred to as the illumination mode.

[0049] An illuminator IL may include an adjuster AD configured to adjust the (angular / spatial) intensity distribution of a beam. Typically, at least the outer and / or inner radial ranges of the intensity distribution in the pupil plane of the illuminator (typically referred to as σ_outer and σ_inner, respectively) can be adjusted. The illuminator IL can be operated to vary the angular distribution of the beam. For example, the illuminator can be operated to change the number and angular range of segments in the pupil plane where the intensity distribution is non-zero. Different illumination modes can be achieved by adjusting the intensity distribution of the beam in the pupil plane of the illuminator. For example, by limiting the radial and angular ranges of the intensity distribution in the pupil plane of the illuminator IL, the intensity distribution can have a multi-pole distribution, such as, for example, a dipole, tetrapole, or hexapole distribution. The illumination mode can be obtained, for example, by inserting an optics device providing the desired illumination mode into the illuminator IL or by using a spatial light modulator.

[0050] The illuminator IL is operable to change the polarization of the beam and can be operated to adjust the polarization using an adjuster AD. The polarization state of the radiation beam across the pupil plane of the illuminator IL can be referred to as the polarization mode. Using different polarization modes can allow for greater contrast in an image formed on the substrate W. The radiation beam can be unpolarized. Alternatively, the illuminator can be arranged to linearly polarize the radiation beam. The polarization direction of the radiation beam can vary across the pupil plane of the illuminator IL. The polarization direction of the radiation can be different in different regions of the pupil plane of the illuminator IL. The polarization state of the radiation can be selected depending on the illuminator mode. For a multi-pole illuminator mode, the polarization of each pole of the radiation beam can be substantially perpendicular to the position vector of said pole in the pupil plane of the illuminator IL. For example, for a dipole illuminator mode, the radiation can be linearly polarized in a direction substantially perpendicular to the line bisecting the two opposing segments of the dipole. The radiation beam can be polarized in one of two different orthogonal directions, which can be referred to as the X-polarization state and the Y-polarization state. For a quadrupole illuminator mode, the radiation in each pole segment can be linearly polarized in a direction substantially perpendicular to the line bisecting said segment. This polarization mode can be referred to as XY polarization. Similarly, for a hexapolar illumination mode, the radiation in each pole segment can be linearly polarized in a direction substantially perpendicular to the line bisecting the segment. This polarization mode can be referred to as TE polarization.

[0051] In addition, the irradiator IL typically includes various other components, such as the accumulator IN and the concentrator CO. The irradiation system may include various types of optical components for guiding, shaping, or controlling radiation, such as refractive, reflective, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof. Therefore, the irradiator provides a regulated radiation beam B with desired uniformity and intensity distribution across its cross-section.

[0052] The support structure MT supports the patterning apparatus in a manner dependent on the orientation of the patterning apparatus, the design of the lithography equipment, and other conditions such as whether the patterning apparatus is held in a vacuum environment. The support structure can use mechanical, vacuum, electrostatic, or other clamping techniques to hold the patterning apparatus. The support structure can be, for example, a frame or stage, which may be fixed or movable as needed. The support structure ensures that the patterning apparatus is, for example, in the desired position relative to a projection system. Any use of the terms "mask" or "mask" herein is to be considered synonymous with the more general term "patterning apparatus".

[0053] The term "patterning apparatus" should be broadly interpreted to refer to any apparatus that can be used to impart a pattern to a target portion of a substrate. In embodiments, a patterning apparatus is any apparatus that can be used to impart a pattern to a radiation beam in a cross-section of the radiation beam to form a pattern in a target portion of the substrate. It should be noted that, for example, if the pattern imparted to the radiation beam includes phase-shifting features or so-called auxiliary features, the pattern may not precisely correspond to the desired pattern in the target portion of the substrate. Typically, the pattern imparted to the radiation beam will correspond to a specific functional layer in the device (such as an integrated circuit) produced in the target portion of the device.

[0054] Pattern forming apparatuses can be transmissive or reflective. Examples of pattern forming apparatuses include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in photolithography and include mask types such as binary, alternating phase-shift, and attenuation phase-shift masks, as well as various hybrid mask types. Examples of programmable mirror arrays use a matrix configuration of smaller mirrors, each of which can be independently tilted so that the incident radiation beam is reflected in different directions. The tilted mirrors impart a pattern to the radiation beam reflected by the mirror matrix.

[0055] The term "projection system" should be broadly interpreted to encompass any type of projection system, including refractive, reflective, reflective-refractive, magnetic, electromagnetic, and electrostatic optical systems, or any combination thereof, provided it is suitable for the exposure radiation used or for other factors such as immersion in liquids or vacuum. Any use of the term "projection lens" herein may be considered synonymous with the more general term "projection system."

[0056] A projection system PS may include multiple optical (e.g., lens) elements and may also include an adjustment mechanism configured to adjust one or more of the optical elements to correct aberrations (phase variations throughout the pupil plane in the field). To achieve this, the adjustment mechanism may operate to manipulate one or more optical (e.g., lens) elements within the projection system PS in one or more different ways. The projection system may have a coordinate system in which the optical axes of the projection system extend in the z-direction. The adjustment mechanism may operate to perform any combination of: displacing one or more optical elements; tilting one or more optical elements; and / or deforming one or more optical elements. Displacement of the optical elements may be in any direction (x, y, z, or a combination thereof). While tilting of an optical element typically involves rotating it away from a plane perpendicular to the optical axis about an axis in the x and / or y directions, rotation about the z-axis can be used for non-rotationally symmetric aspherical optical elements. Deformation of the optical elements may include low-frequency shapes (e.g., astigmatism) and / or high-frequency shapes (e.g., free-form aspherical surfaces). Deformation of an optical element can be performed, for example, by using one or more actuators to apply force to one or more sides of the optical element and / or by using one or more heating elements to heat one or more selected areas of the optical element. Generally, it may be impossible to adjust the projection system PS to correct apodization (transmission variations throughout the pupil plane). When designing a patterning apparatus (e.g., a mask) MA for a lithography device LA, the transmission pattern of the projection system PS can be used. By using computational lithography techniques, the patterning apparatus MA can be designed to at least partially correct apodization.

[0057] Photolithography equipment can belong to the type having two (dual-platform) or more stages (e.g., two or more substrate stages WTa, WTb, two or more patterning apparatus stages, or substrate stages WTa and WTb below the projection system in the absence of a substrate specifically for facilitating, for example, measurement and / or cleaning). In such "multi-platform" machines, additional stages can be used in parallel, or one or more stages can be used for exposure while preparatory steps are performed on one or more stages. For example, alignment measurements using an alignment sensor AS and / or level (height, tilt, etc.) measurements using a level sensor LS can be performed.

[0058] Photolithography apparatuses can also fall into the category where at least a portion of the substrate can be covered by a liquid (e.g., water) with a relatively high refractive index to fill the space between the projection system and the substrate. Immersion liquids can also be applied to other spaces within the photolithography apparatus, such as the space between the patterning apparatus and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of a projection system. The term "immersion" as used herein does not imply that structures such as the substrate must be submerged in the liquid, but simply that the liquid is located between the projection system and the substrate during exposure.

[0059] In the operation of the photolithography equipment, the radiation beam B is regulated and provided by the irradiation system IL. The radiation beam B is incident on a patterning apparatus (e.g., a mask) MA held on a support structure (e.g., a mask stage) MT, and patterned by the patterning apparatus. Having traversed the patterning apparatus MA, the radiation beam B passes through a projection system PS, which focuses the beam onto a target portion C of the substrate W. The substrate stage WT can be accurately moved, for example, to position different target portions C within the path of the radiation beam B, by means of a second positioner PW and a position sensor IF (e.g., an interferometer, a linear encoder, a 2-D encoder, or a capacitive sensor). Similarly, for example, after mechanical retrieval from a mask library or during scanning, a first positioner PM and another position sensor (the other position sensor is not explicitly depicted in the image) are used. Figure 1 The pattern forming apparatus MA can be used to accurately position itself relative to the path of the radiation beam B. Generally, the movement of the support structure MT can be achieved by means of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning) forming the portion of the first positioner PM. Similarly, the movement of the substrate stage WT can be achieved by means of a long-stroke module and a short-stroke module forming the portion of the second positioner PW. In the case of a stepper (relative to a scanner), the support structure MT can be connected only to the short-stroke actuator, or it can be fixed. The pattern forming apparatus MA and the substrate W can be aligned using pattern forming apparatus alignment marks M1, M2 and substrate alignment marks P1, P2. Although the illustrated substrate alignment marks occupy dedicated target portions, they can be located in the space between the target portions (these marks are called scribing alignment marks). Similarly, in the case where more than one die is disposed on the pattern forming apparatus MA, the pattern forming apparatus alignment marks can be located between the dies.

[0060] The depicted apparatus can be used in at least one of the following modes. In stepping mode, the support structure MT and substrate stage WT are kept substantially stationary while the pattern with applied radiation beam is projected onto the target portion C in a single exposure (i.e., single static exposure). The substrate stage WT is then shifted in the X and / or Y directions, allowing different target portions C to be exposed. In stepping mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure. In scanning mode, the support structure MT and substrate stage WT are scanned synchronously while the pattern with applied radiation beam is projected onto the target portion C (i.e., single dynamic exposure). The speed and direction of the substrate stage WT relative to the support structure MT can be determined by the magnification (reduction) and image inversion characteristics of the projection system PS. In scanning mode, the maximum size of the exposure field limits the width of the target portion (in the non-scanning direction) in a single dynamic exposure, while the length of the scanning motion determines the height of the target portion (in the scanning direction). In another mode, the support structure MT is kept substantially stationary while the pattern imparted by the radiation beam is projected onto the target portion C, thereby holding the programmable patterning apparatus in place, and the substrate stage WT is moved or scanned. In this mode, a pulsed radiation source is typically used, and the programmable patterning apparatus is updated as needed after each movement of the substrate stage WT or between consecutive radiation pulses during scanning. This operating mode can be readily applied to maskless lithography utilizing a programmable patterning apparatus, such as a programmable mirror array of the type mentioned above.

[0061] You can also use combinations and / or variations or completely different usage patterns described above.

[0062] The substrate can be processed before or after exposure in, for example, a track or developing coating system (typically a tool that applies a resist layer to the substrate and develops the exposed resist) or a measurement or inspection tool. Where applicable, the disclosure herein can be applied to such and other substrate processing tools. Additionally, the substrate can be processed more than once, for example to produce a multilayer IC, such that the term "substrate" as used herein may also refer to a substrate that already comprises multiple processed layers.

[0063] The terms “radiation” and “beam” used in this article for lithography cover all types of electromagnetic radiation, including extreme ultraviolet (EUV) radiation (e.g., with wavelengths in the range of 5 nm to 20 nm).

[0064] Various patterns on or provided by a pattern forming apparatus can have different process windows, i.e., the space of processing variables upon which a pattern conforming to specifications is based. Examples of pattern specifications regarding potential systematic defects include checking for necking, line pullback, line thinning, CD, edge placement, overlap, resist top loss, resist undercut, and / or bridging. Process windows of patterns on the pattern forming apparatus or its regions can be obtained by merging (e.g., overlapping) the process windows of each individual pattern. The boundaries of the process windows of a group of patterns include the boundaries of the process windows of some of the individual patterns. In other words, these individual patterns constrain the process windows of the group of patterns.

[0065] Figure 2 Further illustrations show the radiation source SO and the lithography equipment LA, as well as... Figure 1 Other components are shown. Figure 2 In this configuration, the radiation source SO is an EUV laser-generated plasma (LPP) source, and the lithography apparatus LA is an EUV scanner. As described above, the radiation source SO is configured to generate an EUV radiation beam B and supply the EUV radiation beam B to the lithography apparatus LA. The lithography apparatus LA includes an irradiation system IL, a support structure MT configured to support a patterning apparatus MA (e.g., a mask), a projection system PS, and a substrate stage WT configured to support a substrate W.

[0066] The irradiation system IL is configured to adjust the EUV radiation beam B before it is incident on the pattern forming apparatus MA. The irradiation system IL may include a faceted field mirror assembly 210 and a faceted pupil mirror assembly 211. Together, the faceted field mirror assembly 210 and the faceted pupil mirror assembly 211 provide the EUV radiation beam B with a desired cross-sectional shape and a desired intensity distribution. In addition to or in place of the faceted field mirror assembly 210 and the faceted pupil mirror assembly 211, the irradiation system IL may also include other mirrors or devices.

[0067] After adjustment, the EUV radiation beam B interacts with the patterning apparatus MA. This interaction produces a patterned EUV radiation beam B'. A projection system PS is configured to project the patterned EUV radiation beam B' onto a substrate W. For this purpose, the projection system PS may include a plurality of mirrors 213, 214 configured to project the patterned EUV radiation beam B' onto the substrate W held by a substrate stage WT. The projection system PS may apply a reduction factor to the patterned EUV radiation beam B', thus forming an image with features smaller than the corresponding features on the patterning apparatus MA. For example, a reduction factor equal to 4 or 8 may be applied. Although Figure 2The projection system PS is illustrated as having only two mirrors 213 and 214, but the projection system PS may include a different number of mirrors (e.g., six or eight mirrors).

[0068] The substrate W may include a previously formed pattern. In this case, the photolithography apparatus LA aligns the image formed by the patterned EUV radiation beam B' with the pattern previously formed on the substrate W.

[0069] A relative vacuum, i.e., a small amount of gas (e.g., hydrogen) at a pressure sufficiently below atmospheric pressure, can be provided in the radiation source SO, the irradiation system IL, and / or the projection system PS.

[0070] Figure 2 The radiation source SO shown belongs to the type that can be referred to as a laser-generated plasma (LPP) source, for example. A laser system 201, which may include, for example, a CO2 laser, is arranged to deposit energy via a laser beam 202 onto a fuel provided by, for example, a fuel emitter 203, such as tin (Sn). Although tin is mentioned in the following description, any suitable fuel can be used. The fuel may be, for example, in liquid form and may be, for example, a metal or alloy. The fuel emitter 203 may include a nozzle configured to guide tin, for example, in droplet form, along a trajectory toward the plasma formation region 204. The laser beam 202 is incident on the tin at the plasma formation region 204. The deposition of laser energy into the tin generates tin plasma 207 at the plasma formation region 204. During the de-excitation and recombination of electrons and ions in the plasma 207, radiation, including EUV radiation, is emitted from the plasma.

[0071] EUV radiation from the plasma is collected and focused by collector 205. Collector 205 includes, for example, a near-normal incident radiation collector 205 (sometimes more generally referred to as a normal incident radiation collector). Collector 205 may have a multi-layered mirror structure arranged to reflect EUV radiation (e.g., EUV radiation having a desired wavelength such as 13.5 nm). Collector 205 may have an elliptical configuration with two foci. The first of the foci may be located at plasma formation region 204, and the second of the foci may be located at intermediate focal point 206, as discussed below.

[0072] Laser system 201 can be spatially separated from radiation source SO. In this case, laser beam 202 can be transmitted from laser system 201 to radiation source SO by means of a beam delivery system (not shown) including, for example, suitable guiding mirrors and / or beam expanders and / or other optical devices. Laser system 201, radiation source SO, and beam delivery system can be collectively referred to as radiation system.

[0073] Radiation reflected by collector 205 forms an EUV radiation beam B. The EUV radiation beam B is focused at an intermediate focal point 206 to form an image of the plasma present in plasma formation region 204 at the intermediate focal point 206. The image at the intermediate focal point 206 acts as a virtual radiation source for irradiating system IL. Radiation source SO is arranged such that the intermediate focal point 206 is located at or near the opening 208 in the enclosure structure 209 of radiation source SO. Although... Figure 2 The radiation source SO is described as a laser-generated plasma (LPP) source, but any suitable source such as a discharge-generated plasma (DPP) source or a free-electron laser (FEL) can be used to generate EUV radiation.

[0074] Figure 3 This is a more detailed view of the collector 205 of the source SO of the lithography apparatus LA (shown in the previous figure). The laser system 201 can be arranged to deposit laser energy into the fuel (as described above), thereby generating a highly ionized plasma at the formation region 204, the plasma having electrons with temperatures of tens of electron volts. High-energy radiation generated during the deexcitation and recombination of these ions is emitted from the plasma, collected by the near-normal incident collector 205, and focused onto the opening 208 in the enclosure structure 209.

[0075] Existing sources (such as) Figures 1 to 3 The heated tin-reducing modules within the source SO shown are typically manufactured using 316 stainless steel as the base material. Stainless steel can be machined using existing manufacturing techniques and practices. It can also be 3D printed to create more intricate shapes. Heater recesses are often cut (or printed) into the module body, and the heaters are brazed in place. Brazing requires high temperatures (approximately 1000°C) close to the melting temperature of copper (approximately 1080°C) and / or other thermally conductive materials that can be used in the tin-reducing module, thus module damage (including heater damage) is possible. Solidification of the brazing and cooling of the tin-reducing module can also cause deformation unless sufficient mechanical structure is included as part of the module. Applying brazing to complex shapes is difficult because the brazing locations often balance surface tension and gravity. It is difficult to hold the heater in place to form the correct brazing gap. Due to the uncontrollable nature of the process, the brazing also has a limited usable thickness. Finally, when operating in a vacuum (e.g., as in a radiation source SO), the heater needs to be fully bonded to the substrate.

[0076] Compared to existing systems, Figure 4 The diagram illustrates a heat transfer system 400 for an extreme ultraviolet (EUV) radiation utilization device. The EUV radiation utilization device can be an EUV radiation source (e.g., as described above and...). Figures 1 to 3The SO shown in the figure), inspection tools (e.g., mask inspection tools), and lithography equipment (e.g., the ones described above and in Figure 1 and Figure 2 The system 400 can be integrated into one or more components of such a system, used on or with spare components of such a system, for servicing such a system or spare components of a system, and / or can be used in other ways. The system 400 can also be applied to other areas where controllable and / or otherwise predictable heat transfer to and / or through the various components of the system is important.

[0077] System 400 facilitates the direct deposition of metal (e.g., heat transfer portion 404 described below) onto a heater using a cold spray technique. The deposited metal forms a bond with the heater (e.g., heater 420) and a substrate material (e.g., body 406 described below). Compared to brazing, cold spraying occurs at room temperature, allows for visual application, allows the addition of additional materials to provide a protective or conductive layer, facilitates repair after inspection, and / or offers other advantages.

[0078] System 400 includes an EUV radiation utilization device housing 402, a heat transfer section 404, one or more heaters 420, and / or other components. Housing 402 is configured to support, enclose, surround, interface with, and / or otherwise house one or more components of an EUV radiation source or lithography device. Housing 402 may include a body 406. Body 406 is configured to provide structural rigidity to housing 402, provide shape to housing 402, and / or may have other purposes. Body 406 may have any shape, size, thickness, etc., that allows system 400 to function as described herein. For example, body 406 may include stainless steel, low-carbon steel, and / or other materials. In some embodiments, body 406 comprises stainless steel. Body 406 may be formed by cold spraying, additive manufacturing, machining, (e.g., via screws, nuts, bolts, clips, jigs, adhesives, etc.) assembling one or more sub-components together to form body 406, and / or other operations.

[0079] The heat transfer portion 404 is configured to facilitate heat transfer through one or more areas and / or the entire (e.g., stainless steel) body 406. Figure 4 As shown, the heat transfer portion 404 may be external to the main body 406. Alternatively or additionally, the heat transfer portion 404 may occupy space within the main body 406, such as... Figure 7As shown and described below, the heat transfer portion 404 effectively diffuses heat throughout the entire heat transfer portion 404. Thus, at some locations on the body 406, heat can be transferred from the body 406 to the heat transfer portion 404, and at other locations, heat can be transferred from the heat transfer portion 404 to the body 406. Facilitating heat transfer through one or more regions and / or the entire body 406 includes both and / or other possibilities. For example, the heat transfer portion 404 may comprise copper, copper and diamond, copper and alumina, copper and silicon carbide, steel and / or other metals, and / or other thermally conductive materials. In some embodiments, the heat transfer portion 404 comprises copper.

[0080] The heat transfer portion 404 (e.g., the copper portion) is directly bonded to the (stainless steel) body 406. This direct bonding comprises a chemical, mechanical, thermal, and / or pressure-based connection between the surfaces and / or portions of the surfaces of the heat transfer portion 404 and the body 406, without the intervention of any intermediate materials and / or other components. This direct bonding ensures that the heat transfer portion 404 and the body 406 are in contact with each other and / or otherwise in contact with each other.

[0081] For example, the heat transfer portion 404 can be directly bonded to the body 406 using cold spraying technology. Cold spraying technology includes cryogenic ultrasonic and / or hypersonic spray nozzles configured to spray various materials, such as stainless steel powder, copper or copper-based powder, nickel powder, tin powder, and / or other materials, to directly bond the heat transfer portion to the body. Figure 4 In the example shown, cold spraying technology can be used to spray copper or copper-based powder to directly bond the heat transfer portion 404 to the body 406. The grain structure of the (e.g., copper) heat transfer portion 404 and / or (e.g., stainless steel) body 406 may exhibit the effect of cold spraying at acute angles within the grain structure, and / or may include detectable AlO₂ in the (e.g., copper) heat transfer portion 404 due to, for example, cold spraying. x Abrasives and other possible effects. In some embodiments, using brazing with a solder that can be detected at the stainless steel-copper interface, using melting, using electroplating, and / or using other methods, the (e.g., copper) heat transfer portion 404 can be directly bonded 410 to the (e.g., stainless steel) body 406.

[0082] One or more heaters 420 are configured to heat (e.g., stainless steel) a body 406 and (e.g., copper) a heat transfer portion 404 and / or other components. One or more heaters 420 may include one or more (e.g., radiant) heat sources and / or other heaters. For example, one or more heaters 420 may be formed of thermally coaxial heating elements. Each heating element may have one or two straight current-carrying cores within a flexible metal sheath, the current-carrying cores being electrically insulated from each other and from the sheath, for example, by means of highly compacted refractory powder.

[0083] The body 406 may include one or more chambers 430 configured to receive one or more heaters 420. The one or more chambers 430 may include one or more recesses, slots, channels, depressions, cavities, orifices, and / or other structures. A heat transfer portion 404 (e.g., a copper portion) may be configured to cover one or more heaters 420 and / or chambers 430, and to attach one or more heaters 420 to the body 406 (e.g., stainless steel). Figure 4 As shown, the heat transfer portion 404 may cover one or more heaters 420 and fill some or all of any additional available space in the recess forming the chamber 430. This ensures efficient heat transfer as described herein and / or serves other purposes.

[0084] The heat transfer portion 404 (e.g., a copper portion) can be applied to the body 406 (e.g., via the cold spraying technique described above), and the chamber 430 can be formed in the heat transfer portion 404 (and / or the body 406) by means of, for example, drilling, etching, etc., or the body 406 can be selectively cold sprayed so that the chamber 430 is not covered by the heat transfer portion 404. In such embodiments, a heater 420 can be added, for example, after cold spraying.

[0085] Heat transfer can occur between the (copper) heat transfer section 404, the hydrogen gap, and / or the subsequent surface connected to the body 406 (e.g., at the rear in the structure of an EUV radiation source). The narrow hydrogen gap is a relatively efficient heat convection device (less efficient than combining the two components together, but more efficient than a vacuum, because a temperature difference of 100°C to 250°C can typically exist across the hydrogen gap). The heat transfer section 404 facilitates efficient heat transfer and thereby provides a more uniform and higher average temperature on the non-tin-facing side of the body 406. When the corresponding thermally controlled (e.g., water-cooled) surface is placed close to the non-tin-facing surface of the body 406, more heat is drawn from the body 406 to these cold surfaces, resulting in the desired low temperature on the tin-facing surface of the body 406.

[0086] Figure 5 An example of a cold spray technology system 500 is illustrated. Figure 5 Also shown is copper 502 produced by a cold spraying technology system (e.g., copper 502 formation). Figure 4 The heat transfer portion shown is made of 404 stainless steel and 504 stainless steel (504 stainless steel is formed). Figure 4 The main body 406 shown is interface 506. Interface 506 illustrates the direct bond between copper 502 and stainless steel 504. In the cold spraying system 500, metal particles 510 (from the metal powder feeder 512) are injected into the gas flow 514 in the gas heater and pressurization chamber 520. For example, the particles 510 can be copper metal particles. The particles 510 are accelerated at ultrasonic speeds and leave the spray nozzle 522. The particles 510 collide with and deform on the surface 530, adhering to the surface and adhering to each other. For example, the surface 530 can be a stainless steel surface (e.g., Figure 4 The stainless steel surface of the main body 406 shown. Particles accumulate and form a layer 540 on the surface 530 (e.g., forming a layer 540). Figure 4 The heat transfer section 404 is shown.

[0087] like Figure 5 As shown, the gas heater and pressurization chamber 520 and / or the spray nozzle 522 can be moved toward and / or otherwise guided toward the surface 530 by one or more mechanical systems 550 (in this example, one or more mechanical systems 550 are robotic arms that are part of a six-axis robot). The mechanical systems may include various moving parts, structural supports, software controls, and / or other components configured to facilitate the cold spraying described herein. For example, the spray nozzle 522 can be handled by a six-axis robot traveling on a linear track, and the surface 530 can be mounted on a turntable. This setup enables the manufacture of... Figure 4 The system 400 and / or other systems shown have a wide range of flexibility. Figure 5 Various valves and / or other gas control mechanisms 560 are also illustrated, which are configured to regulate the flow of gas 570 to the metal powder feeder 512 and / or the gas heater and pressurization chamber 520.

[0088] Figure 6 The illustration shows the advantageous and flexible nature of cold spray technology. Figure 6 The illustration shows the source Figure 5The gas heater and pressurization chamber 520, and the spray nozzle 522 for spraying metal particles 610. The metal particles 610 are sprayed in the gas flow, so that the metal particles 610 collide with and deform on the surface 630, adhere to the surface 630 and adhere to each other to form a layer 632 on the surface 630. In this example, the surface 630 can be 3D printed and / or have any number of different shapes. As described above, cold spraying technology includes cryogenic ultrasonic and / or hypersonic spray nozzles configured to spray various materials, such as copper or copper matrix powder, to directly bond the heat transfer portion (in this example, layer 632) to the body (in this example, surface 630). For example, the cold-sprayed copper layer 632 can be achieved by controlling the orientation of the nozzle 522, the parameters of the gas heater and pressurization chamber 520 (and / or Figure 5 Other aspects of the system 500 shown are selectively (i.e., at different locations, in different amounts, etc.) coated onto surface 630. Figure 6 As shown, cold spraying technology can be flexibly applied to surfaces of different shapes (e.g., vertical, horizontal, curved, etc.) to directly bond heat transfer components to the substrate. The low-temperature nature of cold spraying technology ensures that surface 630 does not deform unexpectedly. Different layers of different materials can be sprayed onto surface 630.

[0089] In this example, surface 630 is shown as an S-shaped curve. It should be noted that... Figure 6 Surface 630 should be considered as a representative example of many possible components with various complex shapes. For example, in the context of an EUV source, surface 630 could represent a forked exhaust throat, an annular exhaust manifold, a heated exhaust gasket, and / or other components (e.g., coated with a 1 mm to 3 mm copper spray to achieve a target thermal conductivity). Existing methods cannot provide such a coating on such components. It should be understood that the techniques disclosed herein can be used in areas of an EUV source other than tin management. The techniques disclosed herein describe a method for transforming low-thermal-conductivity components of complex shapes into high-thermal-conductivity components using conventional metals. This has many possible applications.

[0090] Figure 7 The diagram shows... Figure 4 Example 700 of the system 400 shown, wherein the heat transfer portion 404 (e.g., copper portion) includes one or more recesses 702 within a body 406 (e.g., stainless steel).

[0091] As described above, in a typical radiation source, the tin mitigation module comprises a stack of tin, nickel, stainless steel, copper, and stainless steel. Producing this stack involves numerous manufacturing steps, making it difficult to manufacture and presenting other disadvantages (see above discussion). The following process steps are required to produce such a stack: 1. Gravity pouring of molten copper into a pre-formed stainless steel chamber and allowing the copper to solidify; 2. Welding a stainless steel cap to encapsulate the copper; 3. Machining the grooves for the cable heater; 4. Vacuum brazing the cable heater to form solid contact with the stainless steel (but this most often results in only partial contact); 5. Applying a physical vapor deposition (PVD) or chemical vapor deposition (CVD) coating of titanium nitride (TiN) to protect the brazing material from tin corrosion during use; 6. Masking the non-EUV-facing side of the stack with wax; 7. Performing electroless deposition of nickel (Ni) pre-plating on the EUV-facing side of the stack; 8. Electroplating tin onto the nickel; 9. Manually removing the wax mask; and 10. Removing wax residue. These processes are complex, requiring wet electrodeposition, high-temperature vacuum deposition, material phase transitions, and highly specialized brazing, making this stack one of the most difficult EUV source-related components to manufacture.

[0092] In contrast, Example 700 (along with) Figure 4 The system 400 shown is significantly less complex to manufacture because it utilizes cold spraying technology, as described above.

[0093] For example, one or more recesses 702 may be positioned directly adjacent to one or more heaters 420. A recess (chamber 430) may be formed 711 in the recess 702, and the heater 420 may be placed 713 in the recess (chamber 430). The heat transfer portion 404 (copper in this example) may be cold-sprayed 715 to directly bond the heat transfer portion 404 (and heater 420) to the body 406. Excess copper (in this example) may be removed by machining 717.

[0094] Layer 712 is used to cap one or more recesses 702 710. Layer 712 may be, for example, a stainless steel layer and / or may be formed of other materials. Layer 712 may also be deposited using cold spraying techniques (e.g., causing the grain structure of the stainless steel layer to exhibit the effect of cold spraying at acute angles in the grain structure caused by cold spraying) and / or other techniques. For example, layer 712 may cover (e.g., copper) the heat transfer portion 404, such as Figure 7 As shown. In some embodiments, the (e.g., stainless steel) layer 712 may be welded to (e.g., stainless steel) body 406 and / or joined to body 406 using other techniques.

[0095] The first side 750 of the body 406 (e.g., stainless steel), opposite to the second side 752 including the heat transfer portion 404 (e.g., copper), can be configured to face a tin-rich environment in the EUV source. The first side 750 and / or the second side 752 may be coated with a titanium nitride (TiN) coating. An electroless nickel (Ni) layer 780 and / or an electroplated tin (Sn) layer 790 may be formed (at locations 782 and 792, respectively) on the first side 750 of the body 406. Alternatively or additionally, layers of molybdenum and / or other materials may be formed on the first side 750 and / or the second side 752. It should be noted that these layers (although not shown in other figures) may be included in the heat transfer system described herein (e.g., as described below). Figure 4 , Figure 5 , Figure 6 , Figure 7 and / or Figure 8 In any embodiment of the system 400 shown.

[0096] Figure 8 The diagram shows... Figure 4 Another example 800 of the system 400 shown includes one or more recesses 702 located between one or more heaters 420. The heat transfer portion 404 comprises copper (Cu), as illustrated. For example, one or more heaters 420 may be brazed to (e.g., stainless steel) a body 406, and / or coupled to the body 406 using other methods. This configuration provides a heat transfer system (e.g., similar to...). Figure 4 The system shown is 400 and / or a system similar to this system), the heat transfer system having a relatively stable temperature 810 throughout the body 406 in relation to the profile 814 of position 812 (i.e., there is no change between the maximum and minimum values ​​in profile 814).

[0097] Within the context of EUV sources, 316 stainless steel is used as the base material to produce existing heated tin-lightened modules. This material utilizes existing manufacturing techniques and practices. Heated tin-lightened modules can also be 3D printed to form more refined shapes. Heater recesses are cut (or printed) into the body, and the heaters are brazed in place. A titanium nitride (TiN) coating is applied to protect the heaters, brazing, and base material from liquid tin corrosion (e.g., at temperatures above 232°C). A major drawback of most stainless steels is their low thermal conductivity. The module is heated using brazed heaters. However, the temperature drops rapidly with increasing distance from the heater. This results in significant temperature variations and large minimum and / or maximum temperatures.

[0098] Example 800 (together) Figure 7 Example 700 and Figure 4 The system 400 shown provides better thermal control over tin-facing surfaces and / or other surfaces, i.e., below or above the melting temperature, among other advantages. In tin-lightening applications, the EUV source generates a large volume of hot gas that applies heat directly to several surfaces. This hot gas keeps some surfaces above the tin melting temperature without any heater input. Example 800 is a hybrid metal structure of stainless steel (for manufacturing and tin compatibility) and copper (for thermal conductivity). Stainless steel provides a rigid structure that can withstand brazing processes and physical treatments. Copper is directly bonded to the stainless steel (as described above) and provides a highly conductive path for distributing heat, which is supplied by a heater or externally (e.g., from the hot gas discussed above). The result is a structure with a composite thermal conductivity that can be adjusted according to the application.

[0099] Various components (body 406, heat transfer section 404, heater 420, etc.) can be positioned relative to each other in the allowable system 400 ( Figure 4 , Figure 7 , Figure 8 etc.) as described herein, in any location that functions and / or to allow system 400 ( Figure 4 , Figure 7 , Figure 8 (etc.) Any angular positioning that functions as described herein. This can include positioning at a specific relative distance between elements, at a specific angle between elements, etc. The number of various components illustrated and described is not intended to be limiting. The principles described herein can be extended such that in some embodiments, system 400 includes additional or fewer heaters, bodies, heat transfer components, and / or other components.

[0100] Figure 9 The illustration depicts a heat transfer method 900 and / or a method for manufacturing a heat transfer system, for example, for an extreme ultraviolet (EUV) radiation utilization device. For example, method 900 may be performed before and / or as part of a patterning operation in a semiconductor device manufacturing process. In some embodiments, for example, one or more operations of method 900 may be performed within the same process. Figure 4 The system 400 shown in the figure, computer system (e.g., such as...) Figure 10 Implemented or constructed by (as illustrated in the diagram and as described below) and / or other systems. Figure 4 The system 400 shown in the figure, computer system (e.g., such as...) Figure 10(Illustrated in the figure and described below) and / or other system implementations. Method 900 may include: providing a body (operation 902); connecting one or more heaters configured to heat the body (operation 904); directly attaching a heat transfer portion to the body (operation 906); and / or other operations. The operational intent of method 900 is illustrative. For example, method 900 may be implemented using one or more additional operations not described and / or without one or more of the operations discussed. Additionally, the operation of method 900 in Figure 9 The order shown in the illustrations and described herein is not intended to be limiting.

[0101] One or more portions of method 900 may be implemented in and / or controlled by one or more processing devices (e.g., digital processors, analog processors, digital circuits designed to process information, analog circuits designed to process information, state machines, and / or other mechanisms for electronically processing information). For example, heating may be controlled by one or more processing devices. One or more processing devices may include one or more means that perform some or all of the operations of method 900 in response to instructions electronically stored on an electronic storage medium. One or more processing devices may include one or more means configured by hardware, firmware, and / or software that are specifically designed to perform one or more operations of method 900 (e.g., see below regarding...). Figure 10 (Discussion).

[0102] At operation 902, a body may be provided. The body may be part of a housing configured to support, enclose, surround, border, and / or otherwise accommodate one or more components of an EUV radiation utilization device, such as an EUV radiation source, inspection tool, lithography equipment, and / or other EUV radiation utilization device. The body is configured to provide structural rigidity to the housing, provide shape to the housing, and / or may have other purposes. The body may have any shape, size, thickness, etc., that allows it to function as described herein. In some embodiments, for example, the body comprises stainless steel, low-carbon steel, and / or other materials. The body may be formed by assembling one or more sub-components together to form the body, and / or other operational formations, through cold spraying, additive manufacturing, machining, (e.g., via screws, nuts, bolts, clips, jigs, adhesives, etc.). Operation 902 may include providing with Figure 4 The main body 406 shown is the same as or similar to the main body, and / or other components described above.

[0103] At operation 904, the connection is configured as one or more heaters for heating the body. One or more heaters are configured to heat (e.g., stainless steel) the body, heat transfer sections, and / or other components. One or more heaters may include one or more (e.g., radiant) heat sources and / or other heaters. Operation 904 may include connections to... Figure 4 The heater 420 shown is configured with the same or similar heaters and / or other components described above.

[0104] At operation 906, the heat transfer portion is directly bonded to the body. The heat transfer portion is configured to facilitate heat transfer through one or more areas and / or the entire (e.g., stainless steel) body. For example, the heat transfer portion may include copper, copper and diamond, copper and alumina, copper and silicon carbide, and / or other thermally conductive materials.

[0105] The heat transfer portion (e.g., the copper portion) is directly bonded to the (stainless steel) body. Direct bonding includes a chemical, mechanical, thermal, and / or pressure-based connection between the surfaces and / or portions of the surfaces of the heat transfer portion and the body, without the intervention of any intermediate materials and / or other components. Direct bonding ensures that the heat transfer portion 404 and the body 406 are in contact with each other and / or otherwise in contact with each other.

[0106] For example, the heat transfer portion can be directly bonded to the body using cold spraying technology. The grain structure of the (e.g., copper) heat transfer portion and / or (e.g., stainless steel) body can exhibit the effect of cold spraying at acute angles within the grain structure, and / or may include detectable AlO₂ in the (e.g., copper) heat transfer portion caused by, for example, cold spraying. x Abrasives and other possible effects. Using brazing with solder that can be detected at the stainless steel-copper interface, using fusion, using electroplating, and / or using other methods, the (e.g., copper) heat transfer portion can be directly bonded to the (e.g., stainless steel) body.

[0107] The body (e.g., stainless steel) may include one or more chambers configured to house one or more heaters. The one or more chambers may include one or more recesses, slots, channels, depressions, cavities, orifices, and / or other structures. A heat transfer portion (e.g., a copper portion) may be configured to cover one or more heaters and / or chambers and to attach one or more heaters to the (e.g., stainless steel) body. For example, the heat transfer portion may cover one or more heaters and fill some or all of any additional available space in the recesses forming the chambers. This ensures effective heat transfer as described herein and / or serves other purposes.

[0108] Can be used with Figure 4The heat transfer portion 404 shown is the same as or similar to the heat transfer portion and / or other components described above to perform operation 906.

[0109] The heat transfer portion (e.g., a copper portion) may include one or more recesses within a body (e.g., stainless steel). For example, one or more recesses may be positioned directly adjacent to one or more heaters. Grooves may be formed in the recesses, and (e.g., before covering the heat transfer portion, e.g., as...) Figure 7 As shown and described above, the heater can be placed in the recess.

[0110] Method 900 may include using a layer to seal one or more recesses. The layer may be, for example, a stainless steel layer and / or may be formed of other materials. The layer may be deposited using cold spraying techniques (e.g., causing the grain structure of the stainless steel layer to exhibit the effect of cold spraying at acute angles within the grain structure) and / or other techniques. For example, the layer may cover (e.g., copper) heat transfer portions, such as… Figure 7 As shown. (e.g., stainless steel) layers can be welded to (e.g., stainless steel) the main body and / or coupled to the main body using other techniques.

[0111] The first side of the body (e.g., stainless steel) opposite to the second side, which includes a heat transfer portion (e.g., copper), can be configured to face a tin-rich environment in the EUV source. Method 900 may optionally include coating the first and / or second sides of the body with a titanium nitride (TiN) coating. Method 900 may, for example, include forming an electroless nickel (Ni) layer and / or an electroplated tin (Sn) layer (e.g., as shown in the image) on the first side of the body. Figure 7 (As shown and described above). Alternatively or additionally, method 900 may include forming a molybdenum layer and / or other material layers on a first side and / or a second side.

[0112] Figure 10This is a block diagram of an exemplary computer system CS, which can be used to control one or more operations described herein (e.g., a cold spraying operation). The computer system CS includes a bus BS or other communication mechanism for conveying information and a processor PRO coupled to the bus BS for processing information. The computer system CS also includes main memory MM, such as random access memory (RAM) or other dynamic storage, coupled to the bus BS for storing information and instructions to be executed by the processor PRO. The main memory MM can also be used to store temporary variables or other intermediate information during instruction execution by the processor PRO. The computer system CS also includes read-only memory (ROM) or other static storage devices coupled to the bus BS for storing static information and instructions for the processor PRO. A storage device SD, such as a magnetic disk or optical disk, is provided and coupled to the bus BS for storing information and instructions.

[0113] A computer system (CS) can be connected via a bus (BS) to a display (DS) for showing information to the computer user, such as a flat panel display, a touch panel display, or a cathode ray tube (CRT). An input device (ID), including alphanumeric keys and other keypads, is connected to the bus (BS) to transmit information and command selections to the processor (PRO). Another type of user input device is a cursor controller (CC) for transmitting directional information and command selections to the processor (PRO) and for controlling cursor movement on the display (DS), such as a mouse, trackball, or cursor direction keys. This input device typically has two degrees of freedom on two axes (a first axis (e.g., x) and a second axis (e.g., y)), which allows the device to specify a position in a plane. Touch panel (screen) displays can also be used as input devices.

[0114] All or some of the operations described herein can be executed by a computer system CS in response to processor PRO executing one or more sequences of instructions contained in main memory MM. Such instructions can be read into main memory MM from another computer-readable medium, such as storage device SD. Execution of the instruction sequence contained in main memory MM causes processor PRO to perform the process steps (operations) described herein. One or more processors arranged in a multiprocessor configuration can also be used to execute the instruction sequence contained in main memory MM. Hardwired circuitry can be used in place of software instructions or in combination with software instructions. Therefore, the description herein is not limited to any particular combination of hardware circuitry and software.

[0115] As used herein, the terms "computer-readable medium" or "machine-readable medium" refer to any medium that participates in providing instructions to a processor (PRO) for execution. Such media can take many forms, including, but not limited to, non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical discs or magnetic disks, such as storage devices (SDs). Volatile media include volatile memory, such as main memory (MMs). Transmission media include coaxial cables, copper wires, and optical fibers, the optical fibers comprising conductors including a bus (BS). Transmission media can also take the form of sound waves or light waves, such as sound waves or light waves generated during radio frequency (RF) and infrared (IR) data communications. Computer-readable media can be non-transitory, such as floppy disks, flexible disks, hard disks, magnetic tapes, any other magnetic media, CD-ROMs, DVDs, any other optical media, punched cards, paper tapes, any other physical media with a perforated pattern, RAM, PROMs, EPROMs, FLASH-EPROMs, any other memory chips or cartridges. Non-transitory computer-readable media can have instructions recorded thereon. When executed by a computer, the instructions may perform any of the operations described herein. For example, a transient computer-readable medium may include a carrier wave or other propagated electromagnetic signals.

[0116] Various forms of computer-readable media may be involved when carrying one or more sequences of instructions to a processor PRO for execution. For example, the instructions may initially be carried on a disk of a remote computer. The remote computer may load the instructions into its volatile memory and transmit the instructions via a network. The computer system CS may receive data and place the data on a bus BS. The bus BS carries the data to main memory MM, from which the processor PRO fetches and executes the instructions. The instructions received from main memory MM may optionally be stored on a storage device SD before or after execution by the processor PRO.

[0117] The computer system CS may also include a communication interface CI connected to the bus BS. The communication interface CI provides bidirectional data communication to a network link NDL connected to a local area network (LAN). For example, the communication interface CI may be an Integrated Services Digital Network (ISDN) card or a modem to provide data communication connectivity with a corresponding type of telephone line. As another example, the communication interface CI may be a local area network (LAN) card providing data communication connectivity to a compatible LAN. A wireless link may also be implemented. In any such implementation, the communication interface CI transmits and receives electrical, electromagnetic, or optical signals carrying digital data streams representing various types of information.

[0118] A network link (NDL) typically provides data communication to other data devices via one or more networks. For example, a network link NDL can provide a connection to a host computer (HC) via a local area network (LAN). This can include data communication services provided via a global packet data communication network (now commonly referred to as the "Internet" INT). A LAN (Internet) can use electrical, electromagnetic, or optical signals carrying digital data streams. Signals through various networks and on the network data link (NDL) and through the communication interface (CI) are exemplary forms of carrier waves for transmitting information, carrying digital data to and from the computer system (CS).

[0119] The computer system CS can send and receive messages, including program code, via networks (multiple), network data links (NDL), and communication interfaces (CI). In the example of the Internet, the host computer HC can transmit requested program code for an application via the Internet (INT), network data links (NDL), local area networks (LAN), and communication interfaces (CI). For example, an application downloaded in this way can provide all or part of the methods described herein. The received program code can be executed by the processor PRO upon receipt and / or stored in a storage device (SD) or other non-volatile memory for later execution. In this way, the computer system CS can obtain application code in carrier form.

[0120] Various embodiments of the system and method are disclosed in a subsequent list of numbered aspects. Other features, characteristics, and exemplary technical solutions of this disclosure will be described below in light of these aspects, which may optionally be claimed in any combination.

[0121] 1. A heat transfer system for an extreme ultraviolet (EUV) radiation utilization device, comprising: an EUV radiation utilization device housing, the EUV radiation utilization device housing including a stainless steel body; and a copper portion directly bonded to the stainless steel body, the copper portion being configured to facilitate heat transfer through the stainless steel body.

[0122] 2. The system as described in aspect 1, wherein, using cold spraying technology, the copper portion is directly bonded to the stainless steel body.

[0123] 3. The system as described in any of the foregoing aspects, wherein the grain structure of the copper portion and / or the stainless steel body exhibits the effect of cold spraying at an acute angle in the grain structure, and / or includes detectable AlO₂ in the copper portion caused by cold spraying. x Abrasive.

[0124] 4. The system as described in any of the foregoing aspects, wherein the copper portion is directly bonded to the stainless steel body by brazing using a solder that can be detected at the stainless steel-copper interface, by melting, or by electroplating.

[0125] 5. The system as described in any of the foregoing aspects further includes one or more heaters configured to heat the stainless steel body and the copper portion.

[0126] 6. The system as described in any of the foregoing aspects, wherein the one or more heaters comprise one or more heat sources.

[0127] 7. The system as described in any of the foregoing aspects, wherein the stainless steel body includes one or more chambers configured to house the one or more heaters.

[0128] 8. The system as described in any of the foregoing aspects, wherein the one or more chambers comprise one or more recesses.

[0129] 9. The system as described in any of the foregoing aspects, wherein the copper portion is configured to cover the one or more heaters and to connect the one or more heaters to the stainless steel body.

[0130] 10. The system as described in any of the foregoing aspects, wherein the copper portion comprises one or more recesses within the stainless steel body.

[0131] 11. The system as described in any of the foregoing aspects, wherein the one or more recesses are positioned directly adjacent to the one or more heaters.

[0132] 12. The system as described in any of the foregoing aspects, wherein the one or more recesses are sealed with a stainless steel layer, the stainless steel layer being deposited using a cold spray technique to cover the copper portion.

[0133] 13. The system as described in any of the foregoing aspects, wherein the grain structure of the stainless steel layer exhibits the effect of cold spraying at an acute angle.

[0134] 14. The system as described in any of the foregoing aspects, wherein the stainless steel layer is welded to the stainless steel body.

[0135] 15. The system as described in any of the foregoing aspects, wherein the one or more recesses are located between the one or more heaters.

[0136] 16. The system as described in any of the foregoing aspects, wherein the one or more heaters are brazed to the stainless steel body.

[0137] 17. The system as described in any of the foregoing aspects, wherein the stainless steel body is formed by cold spraying, additive manufacturing, and / or machining.

[0138] 18. The system as described in any of the foregoing aspects, wherein a first side of the stainless steel body opposite to the second side including the copper portion is configured to face the tin-rich environment in the EUV radiation utilization device.

[0139] 19. The system as described in any of the foregoing aspects further comprises: a titanium nitride (TiN) coating located on the first side and / or the second side of the stainless steel body; an electroless nickel (Ni) layer and / or an electroless tin (Sn) layer formed on the first side of the stainless steel body; and / or a molybdenum layer formed on the first side and / or the second side.

[0140] 20. The system as described in any of the foregoing aspects, wherein the radiation utilization device includes an EUV radiation source, an inspection tool, or a lithography device.

[0141] 21. A heat transfer system for an extreme ultraviolet (EUV) radiation utilization device, comprising: a body; one or more heaters configured to heat the body; and a heat transfer portion, using a cold spraying technique, the heat transfer portion being directly bonded to the body, the heat transfer portion being configured to connect the one or more heaters to the body and facilitate heat transfer through the body.

[0142] 22. The system as described in any of the foregoing aspects, wherein the grain structure of the body and / or the heat transfer portion exhibits the effect of cold spraying at an acute angle in the grain structure, and / or includes detectable abrasive in the heat transfer portion caused by cold spraying.

[0143] 23. The system as described in any of the foregoing aspects, wherein the body comprises stainless steel or low-carbon steel; and the heat transfer portion comprises copper, copper and diamond, copper and alumina, or copper and silicon carbide.

[0144] 24. The system as described in any of the foregoing aspects, wherein the one or more heaters comprise one or more heat sources.

[0145] 25. The system as described in any of the foregoing aspects, wherein the body comprises one or more chambers configured to house the one or more heaters.

[0146] 26. The system as described in any of the foregoing aspects, wherein the one or more chambers comprise one or more recesses.

[0147] 27. The system as described in any of the foregoing aspects, wherein the heat transfer portion is configured to cover the one or more heaters and to connect the one or more heaters to the body.

[0148] 28. The system as described in any of the foregoing aspects, wherein the heat transfer portion includes one or more recesses within the body.

[0149] 29. The system as described in any of the foregoing aspects, wherein the one or more recesses contact the one or more heaters.

[0150] 30. The system as described in any of the foregoing aspects, wherein the one or more cavities are covered by a layer deposited using a cold spray technique.

[0151] 31. The system as described in any of the foregoing aspects, wherein the grain structure of the layer exhibits the effect of cold spraying at an acute angle.

[0152] 32. The system as described in any of the foregoing aspects, wherein the one or more cavities are covered by a layer welded to the body.

[0153] 33. The system as described in any of the foregoing aspects, wherein the one or more recesses are located between the one or more heaters.

[0154] 34. The system as described in any of the foregoing aspects, wherein the one or more heaters are brazed to the body.

[0155] 35. The system as described in any of the foregoing aspects, wherein the body is formed by cold spraying, additive manufacturing, and / or machining.

[0156] 36. The system as described in any of the foregoing aspects, wherein a first side of the body opposite to the second side including the heat transfer portion is configured to face the tin-rich environment in the EUV radiation utilization device.

[0157] 37. The system as described in any of the foregoing aspects further includes a titanium nitride (TiN) coating located on the first side and / or the second side of the body.

[0158] 38. The system as described in any of the foregoing aspects further includes an electroless nickel (Ni) layer formed on the first side of the body.

[0159] 39. The system as described in any of the foregoing aspects further includes an electroplated tin (Sn) layer formed on the first side of the body; and / or a molybdenum layer formed on the first side of the body.

[0160] 40. The system as described in any of the foregoing aspects, wherein the radiation utilization device includes an EUV radiation source, an inspection tool, or a lithography device.

[0161] 41. A method for heat transfer in an extreme ultraviolet (EUV) radiation utilization device, comprising: providing an EUV radiation utilization device housing including a stainless steel body; and directly bonding a copper portion to the stainless steel body, the copper portion being configured to facilitate heat transfer through the stainless steel body.

[0162] 42. A method of manufacturing a heat transfer system for an extreme ultraviolet (EUV) radiation utilization device, the method comprising: providing an EUV radiation utilization device housing including a stainless steel body; and directly bonding a copper portion to the stainless steel body, the copper portion being configured to facilitate heat transfer through the stainless steel body.

[0163] 43. The method as described in aspect 41 or 42, wherein the copper portion is directly bonded to the stainless steel body using a cold spraying technique.

[0164] 44. The method of any one of aspects 41 to 43, wherein the grain structure of the copper portion and / or the stainless steel body exhibits the effect of cold spraying at an acute angle in the grain structure, and / or includes detectable AlO₂ in the copper portion caused by cold spraying. x Abrasive.

[0165] 45. The method of any one of aspects 41 to 44, wherein the copper portion is directly bonded to the stainless steel body by brazing using a solder that can be detected in the stainless steel-copper interface, by melting, or by electroplating.

[0166] 46. ​​The method of any one of aspects 41 to 45, further comprising heating the stainless steel body and the copper portion with one or more heaters.

[0167] 47. The method of any one of aspects 41 to 46, wherein the one or more heaters comprise one or more heat sources.

[0168] 48. The method of any one of aspects 41 to 47, wherein the stainless steel body comprises one or more chambers configured to house the one or more heaters.

[0169] 49. The method of any one of aspects 41 to 48, wherein the one or more chambers comprise one or more recesses.

[0170] 50. The method of any one of aspects 41 to 49, wherein the copper portion is configured to cover the one or more heaters and the one or more heaters are coupled to the stainless steel body.

[0171] 51. The method of any one of aspects 41 to 50, wherein the copper portion comprises one or more recesses within the stainless steel body.

[0172] 52. The method of any one of aspects 41 to 51, wherein the one or more recesses are positioned directly adjacent to the one or more heaters.

[0173] 53. The method of any one of aspects 41 to 52, wherein the one or more recesses are sealed with a stainless steel layer, the stainless steel layer being deposited using a cold spray technique to cover the copper portion.

[0174] 54. The method of any one of aspects 41 to 53, wherein the grain structure of the stainless steel layer exhibits the effect of cold spraying at an acute angle in the grain structure caused by cold spraying.

[0175] 55. The method of any one of aspects 41 to 54, wherein the stainless steel layer is welded to the stainless steel body.

[0176] 56. The method of any one of aspects 41 to 55, wherein the one or more recesses are located between the one or more heaters.

[0177] 57. The method of any one of aspects 41 to 56, wherein the one or more heaters are brazed to the stainless steel body.

[0178] 58. The method of any one of aspects 41 to 57, wherein the stainless steel body is formed by cold spraying, additive manufacturing, and / or machining.

[0179] 59. The method of any one of aspects 41 to 58, wherein a first side of the stainless steel body opposite to the second side including the copper portion is configured to face the tin-rich environment in the EUV radiation utilization device.

[0180] 60. The method of any one of aspects 41 to 59, further comprising: coating a titanium nitride (TiN) coating on the first side and / or the second side of the stainless steel body; forming an electroless nickel (Ni) layer and / or an electroplated tin (Sn) layer on the first side of the stainless steel body; and / or forming a molybdenum layer on the first side and / or the second side.

[0181] 61. The method of any one of aspects 41 to 60, wherein the radiation utilization device includes an EUV radiation source, an inspection tool, or a lithography device.

[0182] 62. A heat transfer method for an extreme ultraviolet (EUV) radiation utilization device, comprising: providing a body; coupling one or more heaters configured to heat the body; and directly bonding a heat transfer portion to the body using a cold spray technique, the heat transfer portion being configured to couple the one or more heaters to the body and facilitate heat transfer through the body.

[0183] 63. A method of manufacturing a heat transfer system for an extreme ultraviolet (EUV) radiation utilization device, the method comprising: providing a body; coupling one or more heaters configured to heat the body; and directly bonding a heat transfer portion to the body using a cold spray technique, the heat transfer portion being configured to couple the one or more heaters to the body and facilitate heat transfer through the body.

[0184] 64. The method of any one of aspects 62 or 63, wherein the grain structure of the body and / or the heat transfer portion exhibits the effect of cold spraying at an acute angle in the grain structure, and / or includes detectable abrasive in the heat transfer portion caused by cold spraying.

[0185] 65. The method of any one of aspects 62 to 64, wherein the body comprises stainless steel or low-carbon steel; and the heat transfer portion comprises copper, copper and diamond, copper and alumina, or copper and silicon carbide.

[0186] 66. The method of any one of aspects 62 to 65, wherein the one or more heaters comprise one or more heat sources.

[0187] 67. The method of any one of aspects 62 to 66, wherein the body comprises one or more chambers configured to accommodate the one or more heaters.

[0188] 68. The method of any one of aspects 62 to 67, wherein the one or more chambers comprise one or more recesses.

[0189] 69. The method of any one of aspects 62 to 68, wherein the heat transfer portion is configured to cover the one or more heaters and to connect the one or more heaters to the body.

[0190] 70. The method of any one of aspects 62 to 69, wherein the heat transfer portion comprises one or more recesses within the stainless steel body.

[0191] 71. The method of any one of aspects 62 to 70, wherein the one or more recesses contact the one or more heaters.

[0192] 72. The method of any one of aspects 62 to 71, wherein the one or more cavities are covered by a layer deposited using a cold spray technique.

[0193] 73. The method of any one of aspects 62 to 72, wherein the grain structure of the layer exhibits the effect of cold spraying at an acute angle caused by cold spraying.

[0194] 74. The method of any one of aspects 62 to 73, wherein the one or more recesses are covered by a layer welded to the body.

[0195] 75. The method of any one of aspects 62 to 74, wherein the one or more recesses are located between the one or more heaters.

[0196] 76. The method of any one of aspects 62 to 75, wherein the one or more heaters are brazed to the body.

[0197] 77. The method of any one of aspects 62 to 76, wherein the body is formed by cold spraying, additive manufacturing, and / or machining.

[0198] 78. The method of any one of aspects 62 to 77, wherein a first side of the body opposite to the second side including the heat transfer portion is configured to face the tin-rich environment in the EUV radiation utilization device.

[0199] 79. The method of any one of aspects 62 to 78 further comprises coating the first side and / or the second side of the body with a titanium nitride (TiN) coating.

[0200] 80. The method of any one of aspects 62 to 79 further comprises forming an electroless nickel (Ni) layer on the first side of the body.

[0201] 81. The method of any one of aspects 62 to 80, further comprising forming an electroplated tin (Sn) layer on the first side of the body; and / or forming a molybdenum layer on the first side of the body.

[0202] 82. The method of any one of aspects 62 to 81, wherein the radiation utilization device includes an EUV radiation source, an inspection tool, or a photolithography device.

[0203] The concepts disclosed herein can be associated with any general patterning system used to pattern sub-wavelength features, and may be particularly useful for emerging patterning techniques capable of producing increasingly shorter wavelengths. Emerging techniques already in use include EUV (Extreme Ultraviolet) and DUV lithography, which can produce wavelengths of 193 nm using ArF lasers and even 157 nm using fluorine lasers. Furthermore, EUV lithography can generate wavelengths in the range of 20 nm to 5 nm by bombarding materials (solid or plasma) with high-energy electrons, thereby producing photons within this range.

[0204] While the concepts disclosed herein can be used for patterning on substrates such as silicon wafers, it should be understood that the disclosed concepts can be used with any type of photolithography patterning system, such as photolithography patterning systems used for patterning on substrates other than silicon wafers. Furthermore, combinations and sub-combinations of the disclosed elements may include separate embodiments.

[0205] The above description is intended to be illustrative and not restrictive. Therefore, it will be apparent to those skilled in the art that modifications can be made as described without departing from the scope of the claims set forth below.

Claims

1. A heat transfer system for an extreme ultraviolet (EUV) radiation utilization device, comprising: EUV radiation utilization equipment housing, the EUV radiation utilization equipment housing comprising a stainless steel body; as well as The copper portion is directly bonded to the stainless steel body and is configured to facilitate heat transfer through the stainless steel body.

2. The system as claimed in claim 1, wherein, Using cold spraying technology, the copper portion is directly bonded to the stainless steel body.

3. The system as described in claim 2, wherein, The grain structure of the copper portion and / or the stainless steel body exhibits the effect of cold spraying at an acute angle on the grain structure, and / or includes detectable AlO₂ in the copper portion caused by cold spraying. x Abrasive.

4. The system as claimed in claim 1, wherein, The copper portion is directly bonded to the stainless steel body by brazing using a solder that can be detected at the stainless steel-copper interface, by melting, or by electroplating.

5. The system according to any one of claims 1 to 4, further comprising one or more heaters configured to heat the stainless steel body and the copper portion.

6. The system of claim 5, wherein, The stainless steel body includes one or more chambers configured to accommodate the one or more heaters, the one or more chambers optionally including one or more recesses.

7. The system according to any one of claims 5 to 6, wherein, The copper portion is configured to cover the one or more heaters and to connect the one or more heaters to the stainless steel body.

8. The system according to any one of claims 5 to 7, wherein, The copper portion includes one or more recesses within the stainless steel body.

9. The system of claim 8, wherein, The one or more recesses are positioned directly adjacent to the one or more heaters.

10. The system of claim 9, wherein, The one or more recesses are sealed with a stainless steel layer, which is deposited using a cold spray technique to coat the copper portion.

11. The system of claim 10, wherein, The grain structure of the stainless steel layer exhibits the effect of cold spraying at an acute angle, caused by cold spraying.

12. The system of claim 10, wherein, The stainless steel layer is welded to the stainless steel body.

13. The system as claimed in claim 8 or 9, wherein, The one or more recesses are located between the one or more heaters.

14. The system of claim 13, wherein, The one or more heaters are brazed to the stainless steel body.

15. The system according to any one of claims 1 to 14, wherein, The stainless steel body is formed by cold spraying, additive manufacturing, and / or machining.

16. The system according to any one of claims 1 to 15, wherein, The first side of the stainless steel body, opposite to the second side including the copper portion, is configured to face the tin-rich environment in the EUV radiation utilization device.

17. The system of claim 16, further comprising: A titanium nitride (TiN) coating, wherein the titanium nitride coating is located on the first side and / or the second side of the stainless steel body; Electroless nickel (Ni) and / or tin (Sn) plating layers are formed on the first side of the stainless steel body; and / or A molybdenum layer is formed on the first side and / or the second side.

18. The system according to any one of claims 1 to 17, wherein, The radiation utilization equipment includes EUV radiation sources, inspection tools, or photolithography equipment.

19. A heat transfer method for an extreme ultraviolet (EUV) radiation utilization device, comprising: Provide housings for EUV radiation utilization equipment, including stainless steel bodies; as well as The copper portion is directly bonded to the stainless steel body, and the copper portion is configured to facilitate heat transfer through the stainless steel body.

20. A method for manufacturing a heat transfer system for an extreme ultraviolet (EUV) radiation utilization device, the method comprising: Provide housings for EUV radiation utilization equipment, including stainless steel bodies; as well as The copper portion is directly bonded to the stainless steel body, and the copper portion is configured to facilitate heat transfer through the stainless steel body.

21. A heat transfer system for an extreme ultraviolet (EUV) radiation utilization device, comprising: main body; One or more heaters, said one or more heaters being configured to heat the body; as well as The heat transfer section, using cold spraying technology, is directly bonded to the body. The heat transfer section is configured to connect one or more heaters to the body and facilitate heat transfer through the body.

22. A heat transfer method for an extreme ultraviolet (EUV) radiation utilization device, comprising: Provider; The connection is configured to heat one or more heaters of the body; as well as The heat transfer portion is directly bonded to the body using a cold spraying technique. The heat transfer portion is configured to connect one or more heaters to the body and facilitate heat transfer through the body.

23. A method for manufacturing a heat transfer system for an extreme ultraviolet (EUV) radiation utilization device, the method comprising: Provider; The connection is configured to heat one or more heaters of the body; as well as The heat transfer portion is directly bonded to the body using a cold spraying technique. The heat transfer portion is configured to connect one or more heaters to the body and facilitate heat transfer through the body.

Images