一种波导器件结构制造方法和波导器件结构
By subjecting the ridge waveguide sidewalls of the optical waveguide device chip to alternating fluorine-, nitrogen-, and oxygen free radical plasma treatments and hydrogen-containing hydroxyl treatments, the problem of poor sidewall roughness was solved, and the key performance of the device was improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI BANGXIN SEMI TECHNOLOGY CO LTD
- Filing Date
- 2026-05-28
- Publication Date
- 2026-07-17
AI Technical Summary
In existing optical waveguide device chips, the poor sidewall roughness of ridge waveguides leads to problems such as propagation loss, backscattering, degraded polarization performance, and increased phase noise.
A combination of plasma treatment with fluorine-, nitrogen-, and oxygen-containing free radicals and treatment with hydrogen- and hydroxyl-containing free radicals was used to perform multiple alternating treatments on the sidewalls of the ridge waveguide, removing protrusions and passivating the surface to reduce sidewall roughness.
It significantly improves the device's propagation loss, backscattering, polarization performance, and phase noise, while also enhancing the surface smoothness of the sidewalls and the overall pattern quality.
Smart Images
Figure CN122260570B_ABST