Integrated circuit with galvanic isolation structure and gate driver circuit

Abstract

Integrated circuits and gate driver circuits having a current isolation structure are provided. An integrated circuit (500) includes a semiconductor layer (130) having a first portion (131) in a first device region (310) and a second portion (132) in a second device region (320). A current isolation structure (330) is formed between the first portion (131) and the second portion (132) of the semiconductor layer (130). A capacitively coupled element (200) is formed on a first surface (139) of the semiconductor layer (130). The capacitively coupled element (200) includes a first lower electrode (210) in the first device region (310) and a capacitor dielectric (250) separating the first lower electrode (210) from a top electrode (290) spanning the current isolation structure (330). The first lower electrode (210) is signal connected to a first circuit element (315) in the first device region (310). The top electrode (290) is operably connected to a second circuit element (325) in the second device region (320).

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