A method for preparing high-purity copper target material for improving grain structure uniformity
By combining hot forging, staged rolling and multi-stage annealing processes, the problem of uneven grain size in the preparation of high-purity copper sputtering targets was solved, achieving uniform grain refinement and improving the sputtering performance and stability of the targets.
CN122279438APending Publication Date: 2026-06-26KONFOONG MATERIALS INTERNATIONAL CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- KONFOONG MATERIALS INTERNATIONAL CO LTD
- Filing Date
- 2026-04-28
- Publication Date
- 2026-06-26
Abstract
This invention relates to a method for preparing high-purity copper sputtering targets with improved grain uniformity, comprising the following steps: (1) hot forging and surface treatment of a high-purity copper ingot sequentially to obtain a billet; (2) sequentially performing a first-stage rolling, intermediate annealing, and water cooling on the billet; (3) after intermediate annealing and water cooling, the billet is further subjected to a second-stage rolling, final annealing, and water cooling, and the post-treatment yields a high-purity copper sputtering target. The preparation method can effectively improve the grain structure of the high-purity copper sputtering target, enhance grain uniformity, and improve the sputtering stability of the target.
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