Gallium oxide schottky diode with composite terminal structure and method of manufacturing the same

Abstract

This invention relates to the field of semiconductor device technology, specifically to a gallium oxide Schottky diode with a composite termination structure and its fabrication method. The gallium oxide Schottky diode comprises a single-region JTE termination, a multi-region field-limiting ring termination, and a high-k dielectric field plate termination. The multi-region field-limiting ring termination enables a gradual reduction of p-type charge from the anode to the termination edge. The single-region JTE termination and the multi-region field-limiting ring termination can be simultaneously generated through a single sputtering growth and a single photolithography step. This method introduces a high-k dielectric BTO layer, leveraging its enhanced electric field modulation effect through polarization charge to effectively activate the field-limiting ring termination structure. Simultaneously, it achieves passivation and uniform flattening of the surface electric field of the gallium oxide Schottky diode, significantly alleviating the electric field congestion effect at the anode edge. This broadens the sensitivity window of the traditional single-region JTE termination structure to p-type carrier concentration, achieving kilovolt-level high-voltage blocking capability while significantly simplifying the fabrication process.

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