A Mini-LED backlight module and its fabrication method

Abstract

This invention relates to a Mini-LED backlight module and its fabrication method, belonging to the field of semiconductor display technology. By configuring each growth substrate module to include multiple Mini-LED units arranged in an array, and by sequentially distributing a first sealing layer and a second magnetic encapsulation layer in the gaps between adjacent Mini-LED units, the first sealing layer improves the stability and sealing of each growth substrate module. The second magnetic encapsulation layer, disposed in the gaps between adjacent Mini-LED units, can magnetically adsorb with a third magnetic encapsulation layer on the driving substrate during subsequent transfer, effectively improving the electrical connection stability of the Mini-LED units and enhancing transfer accuracy.

Description

Technical Field

[0001] This invention relates to the field of semiconductor display technology, specifically to a Mini-LED backlight module and its fabrication method. Background Technology

[0002] Mini-LED backlight modules are commonly used in the backlight units of LCD displays. In the fabrication process, a light-emitting epitaxial wafer is cut into Mini-LED chips with a size of 100-300μm. These Mini-LED chips are then mass-transferred onto a driving circuit substrate. Finally, a common electrode and a protective encapsulation layer are fabricated on the surface of the Mini-LED chip array to obtain the Mini-LED backlight module. Mini-LED backlight modules are mainly used in smart TVs, computer monitors, laptops, automotive displays, shopping mall advertising screens, and medical imaging displays. Improving the mass transfer technology of Mini-LED chips is a continuously attracting technological attention in the industry. Summary of the Invention

[0003] The purpose of this invention is to overcome the shortcomings of the prior art and provide a Mini-LED backlight module and its manufacturing method.

[0004] To achieve the above objectives, the present invention proposes a method for fabricating a Mini-LED backlight module, comprising: A light-emitting epitaxial wafer is provided, the light-emitting epitaxial wafer comprising a growth substrate and an epitaxial functional layer.

[0005] The epitaxial functional layer of the light-emitting epitaxial wafer is cut to form multiple Mini-LED units.

[0006] The growth substrate is then cut to form multiple growth substrate modules, each of which includes multiple Mini-LED units arranged in an array.

[0007] Next, a first sealing layer is formed on each of the growth substrate modules, the first sealing layer covering the bottom of the Mini-LED unit.

[0008] Next, a second magnetic encapsulation layer is formed on the first sealing layer, and the second magnetic encapsulation layer fills the gap between adjacent Mini-LED units.

[0009] Next, a first electrode and a second electrode are formed on the upper surface of each Mini-LED unit.

[0010] Next, a plurality of conical holes arranged in an array are formed on the surface of the growth substrate of each growth substrate module, and conical magnetic blocks are formed in the conical holes.

[0011] A driving substrate is provided, on which a plurality of first pixel electrodes and a plurality of second pixel electrodes are formed, and a third magnetic encapsulation layer is formed on the driving substrate.

[0012] Next, each of the growth substrate modules is transferred to the driving substrate, so that the second magnetic encapsulation layer and the third magnetic encapsulation layer are magnetically attracted. Then, the driving substrate is heat-treated so that the first electrode and the second electrode of each Mini-LED unit are electrically connected to the corresponding first pixel electrode and the second pixel electrode, respectively.

[0013] A fourth encapsulation layer is formed to encapsulate the growth substrate module, then the tapered magnetic block is removed, and then a light scattering block is formed in the tapered hole.

[0014] As a preferred technical solution, the specific process for forming the first sealing layer on each of the growth substrate modules is as follows: a resin material is coated in the gap between adjacent Mini-LED units by a slit coating process, the resin material is cured, and the cured resin material is etched to form the first sealing layer.

[0015] As a preferred technical solution, the epitaxial functional layer includes an N-type semiconductor layer, a quantum well light-emitting layer, and a P-type semiconductor layer.

[0016] As a preferred technical solution, during the process of forming a first electrode and a second electrode on the upper surface of each Mini-LED unit, the first electrode is electrically connected to the N-type semiconductor layer, and the second electrode is electrically connected to the P-type semiconductor layer.

[0017] As a preferred technical solution, the specific process for forming the second magnetic encapsulation layer on the first sealing encapsulation layer is as follows: a resin material containing magnetic particles is coated in the gap between adjacent Mini-LED units using a slot coating process, the resin material containing magnetic particles is cured, and then patterned to form the second magnetic encapsulation layer.

[0018] As a preferred technical solution, the upper surfaces of the first electrode, the second electrode, and the second magnetic encapsulation layer are flush.

[0019] As a preferred technical solution, the upper surfaces of the first pixel electrode, the second pixel electrode, and the third magnetic encapsulation layer all have grooves.

[0020] As a preferred technical solution, when each of the growth substrate modules is transferred to the driving substrate, the first electrode is embedded in the first pixel electrode, and the second electrode is embedded in the second pixel electrode.

[0021] The present invention also proposes a Mini-LED backlight module, which is prepared by the above-mentioned method for preparing a Mini-LED backlight module.

[0022] The beneficial effects of this invention are as follows: In the fabrication method of the Mini-LED backlight module of the present invention, by setting each growth substrate module to include multiple Mini-LED units arranged in an array, the growth substrate module can be directly transferred in the subsequent transfer process, greatly reducing the transfer difficulty and the number of transfers. Furthermore, by sequentially setting a first sealing layer and a second magnetic encapsulation layer in the gap between adjacent Mini-LED units, the first sealing layer improves the stability and sealing of each growth substrate module, while the second magnetic encapsulation layer, located in the gap between adjacent Mini-LED units, can magnetically adsorb with a third magnetic encapsulation layer on the driving substrate during the subsequent transfer process, effectively improving the electrical connection stability of the Mini-LED units and increasing transfer accuracy. In addition, grooves are provided on the upper surfaces of the first pixel electrode, the second pixel electrode, and the third magnetic encapsulation layer. When each growth substrate module is transferred to the driving substrate, the first electrode is embedded in the first pixel electrode, and the second electrode is embedded in the second pixel electrode, further facilitating the transfer of Mini-LED units and improving the fabrication yield and lifespan of the Mini-LED backlight module. Furthermore, by forming multiple arrayed conical holes on the surface of the growth substrate of each growth substrate module and forming conical magnetic blocks in the conical holes, the growth substrate module can be easily transported and transferred during the transfer process. After being transferred to the driving substrate and the conical magnetic blocks are removed, light scattering blocks are then formed in the conical holes, which can further improve the light extraction efficiency of the Mini-LED unit. Attached Figure Description

[0023] Figure 1 The diagram shown is a schematic diagram of a growth substrate module formed by cutting the growth substrate in an embodiment of the present invention.

[0024] Figure 2 The diagram shows a structural schematic of a first sealing layer and a second magnetic encapsulation layer formed on a growth substrate module in an embodiment of the present invention.

[0025] Figure 3The diagram shown is a schematic representation of a structure in an embodiment of the present invention that forms a plurality of conical holes arranged in an array.

[0026] Figure 4 The diagram shown is a schematic representation of the structure of the driving substrate in an embodiment of the present invention.

[0027] Figure 5 The diagram shows a structural schematic of transferring each growth substrate module to the driving substrate in an embodiment of the present invention.

[0028] Figure 6 The diagram shown is a schematic diagram of the structure forming the fourth encapsulation layer and the light scattering block in an embodiment of the present invention. Detailed Implementation

[0029] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0030] like Figures 1-6 As shown, this embodiment provides a method for fabricating a Mini-LED backlight module, including: like Figure 1 As shown, a light-emitting epitaxial wafer is provided, the light-emitting epitaxial wafer including a growth substrate 101 and an epitaxial functional layer.

[0031] In a specific embodiment, the epitaxial functional layer includes an N-type semiconductor layer 102, a quantum well light-emitting layer 103, and a P-type semiconductor layer 104.

[0032] In a specific embodiment, the growth substrate 101 can be any suitable substrate such as a sapphire substrate. Then, an N-type semiconductor layer 102, a quantum well light-emitting layer 103, and a P-type semiconductor layer 104 are epitaxially grown using the MOCVD process to serve as epitaxial functional layers. More specifically, a buffer layer 105 can be pre-grown on the growth substrate 101 before growing the epitaxial functional layers.

[0033] In a specific embodiment, the N-type semiconductor layer 102 and the P-type semiconductor layer 104 are respectively an n-type gallium nitride layer and a p-type gallium nitride layer, while the quantum well light-emitting layer 103 is an alternating InGaN quantum well layer and a GaN quantum barrier layer.

[0034] like Figure 1 As shown, the epitaxial functional layer of the light-emitting epitaxial wafer is cut to form multiple Mini-LED units 200.

[0035] In a specific embodiment, the epitaxial functional layer of the light-emitting epitaxial wafer is cut by mechanical cutting or laser cutting, and the buffer layer 105 is cut at the same time as the epitaxial functional layer is cut.

[0036] like Figure 1 As shown, the growth substrate 101 is then cut to form a plurality of growth substrate modules 1000, wherein each growth substrate module 1000 includes a plurality of Mini-LED units 200 arranged in an array.

[0037] In a specific embodiment, the growth substrate 101 is cut using a mechanical cutting process or a laser cutting process.

[0038] like Figure 2 As shown, a first sealing layer 301 is then formed on each of the growth substrate modules 1000, the first sealing layer 301 wraps around the bottom of the Mini-LED unit 200, and then a second magnetic encapsulation layer 302 is formed on the first sealing layer 301, the second magnetic encapsulation layer 302 fills the gap between adjacent Mini-LED units 200.

[0039] In a specific embodiment, the process for forming the first sealing layer on each growth substrate module 1000 is as follows: resin material is coated in the gap between adjacent Mini-LED units 200 by a slit coating process, the resin material is cured, and the cured resin material is etched to form the first sealing layer 301.

[0040] In a specific embodiment, the resin material can be any suitable resin material such as epoxy resin.

[0041] In a specific embodiment, the specific preparation process of the first sealing layer 301 is as follows: epoxy resin material is coated in the gap between adjacent Mini-LED units 200 by a slit coating process, the epoxy resin material is cured, and the cured epoxy resin material is etched to form the first sealing layer 301.

[0042] In a specific embodiment, the process for forming the second magnetic encapsulation layer 302 on the first sealing encapsulation layer 301 is as follows: a resin material containing magnetic particles is coated in the gap between adjacent Mini-LED units 200 by a slot coating process, the resin material containing magnetic particles is cured, and then patterned to form the second magnetic encapsulation layer 302.

[0043] In a specific embodiment, the process for forming the second magnetic encapsulation layer 302 on the first sealing encapsulation layer 301 is as follows: A magnetic resin material is formed in the gap between adjacent Mini-LED units 200 using a slot coating process to obtain the second magnetic encapsulation layer 302. The magnetic resin material contains hard magnetic particles or semi-hard magnetic particles; more specifically, it may contain neodymium iron boron particles, cobalt-platinum alloy particles, or ferrite particles. Then, a pre-curing treatment is performed to place the second magnetic encapsulation layer 302 in a semi-cured state. Finally, the second magnetic encapsulation layer 302 is directionally magnetized in a magnetic field environment. While maintaining the magnetic field, the second magnetic encapsulation layer 302 is cured. Specifically, the curing process involves pre-curing at 100-120°C for 10-15 minutes, followed by high-temperature curing at 180-220°C in a nitrogen atmosphere for 80-120 minutes. More specifically, it involves pre-curing at 110°C for 12 minutes, followed by high-temperature curing at 200°C in a nitrogen atmosphere for 100 minutes, ensuring complete cross-linking and curing of the resin material in the second magnetic encapsulation layer 302. After naturally cooling to room temperature while maintaining the magnetic field environment, the second magnetic encapsulation layer 302 becomes magnetic.

[0044] like Figure 2 As shown, a first electrode 201 and a second electrode 202 are then formed on the upper surface of each Mini-LED unit 200.

[0045] In a specific embodiment, during the process of forming a first electrode 201 and a second electrode 202 on the upper surface of each Mini-LED unit 200, the first electrode 201 is electrically connected to the N-type semiconductor layer 102, and the second electrode 202 is electrically connected to the P-type semiconductor layer 104.

[0046] In a specific embodiment, the upper surfaces of the first electrode 201, the second electrode 202, and the second magnetic encapsulation layer 302 are flush.

[0047] In a specific embodiment, the process for forming the first electrode 201 and the second electrode 202 on the upper surface of each Mini-LED unit 200 is as follows: a through-hole exposing the N-type semiconductor layer 102 is formed on each Mini-LED unit 200 by laser aperture forming process, the sidewalls of the through-hole are passivated, and then a copper layer is deposited by vapor deposition, electroplating or chemical plating, and the first electrode 201 and the second electrode 202 are formed by patterning process.

[0048] like Figure 3As shown, a plurality of conical holes 1011 arranged in an array are then formed on the surface of the growth substrate 101 of each growth substrate module 1000, and conical magnetic blocks 1012 are formed in the conical holes 1011.

[0049] In a specific embodiment, the tapered hole 1011 is formed by a dry etching process or a wet etching process, and then a process similar to that used to form the second magnetic encapsulation layer 302 is used to form the tapered magnetic block 1012, so that the tapered magnetic block 1012 has magnetism.

[0050] like Figure 4 As shown, a driving substrate 400 is provided, on which a plurality of first pixel electrodes 401 and a plurality of second pixel electrodes 402 are formed, and a third magnetic encapsulation layer 403 is formed on the driving substrate 400.

[0051] In a specific embodiment, the first pixel electrode 401 and the second pixel electrode 402 are formed by thermal evaporation, magnetron sputtering, electroplating or chemical plating processes, and the material of the first pixel electrode 401 and the second pixel electrode 402 is one or more of copper, aluminum, silver, titanium, gold and palladium.

[0052] In a specific embodiment, the upper surfaces of the first pixel electrode 401, the second pixel electrode 402, and the third magnetic encapsulation layer 403 all have grooves.

[0053] In a specific embodiment, the process for forming the third magnetic encapsulation layer 403 is as follows: A magnetic resin material is formed on the driving substrate 400 using a slot coating process to obtain the third magnetic encapsulation layer 403. The magnetic resin material contains hard magnetic particles or semi-hard magnetic particles; more specifically, it may contain neodymium iron boron particles, cobalt-platinum alloy particles, or ferrite particles. Then, a pre-curing treatment is performed to place the third magnetic encapsulation layer 403 in a semi-cured state. Next, the third magnetic encapsulation layer 403 is directionally magnetized in a magnetic field environment. While maintaining the magnetic field, the third magnetic encapsulation layer 403 is then cured. The specific process is as follows: first, pre-curing at 100-120℃ for 10-15 minutes, then high-temperature curing at 180-220℃ in a nitrogen atmosphere for 80-120 minutes. More specifically, first, pre-curing at 110℃ for 12 minutes, then high-temperature curing at 200℃ in a nitrogen atmosphere for 100 minutes, so that the resin material of the third magnetic encapsulation layer 403 is completely cross-linked and cured. Then, after naturally cooling to room temperature under a magnetic field environment, the third magnetic encapsulation layer 403 becomes magnetic, and the magnetic field direction of the second magnetic encapsulation layer 302 is opposite to that of the third magnetic encapsulation layer 403, so that the two can be magnetically attracted together.

[0054] like Figure 5 As shown, each of the growth substrate modules 1000 is then transferred to the driving substrate 400, so that the second magnetic encapsulation layer 302 and the third magnetic encapsulation layer 403 are magnetically attracted. Then, the driving substrate 400 is heat-treated so that the first electrode 201 and the second electrode 202 of each Mini-LED unit 200 are electrically connected to the corresponding first pixel electrode 401 and the second pixel electrode 402, respectively. That is, the first electrode 201 is electrically connected to the corresponding first pixel electrode 401, and the second electrode 202 is electrically connected to the corresponding second pixel electrode 402.

[0055] In a specific embodiment, when each of the growth substrate modules 1000 is transferred to the driving substrate 400, the first electrode 201 is embedded in the first pixel electrode 401, the second electrode 202 is embedded in the second pixel electrode 402, and the second magnetic encapsulation layer 302 is embedded in the third magnetic encapsulation layer 403.

[0056] In a specific embodiment, the conical magnetic block 1012 of each growth substrate module 1000 is adsorbed by a magnetic adsorption mechanism, and then the growth substrate module 1000 is transferred to the driving substrate 400. The conical magnetic block 1012 is provided in the transfer process to facilitate the handling and transfer of the growth substrate module 1000.

[0057] like Figure 6 As shown, a fourth encapsulation layer 500 is formed, which encapsulates the growth substrate module 1000. Then, the conical magnetic block 1012 is removed, and then a light scattering block 1013 is formed in the conical hole 1011.

[0058] In a specific embodiment, the conical magnetic block 1012 is removed by a dry etching process or a wet etching process.

[0059] In a specific embodiment, the light scattering block 1013 is an epoxy resin block containing one or more light scattering particles selected from silica nanoparticles, titanium dioxide nanoparticles, PS microspheres, and PMMA microspheres. The specific preparation process is as follows: one or more light scattering particles selected from silica nanoparticles, titanium dioxide nanoparticles, PS microspheres, and PMMA microspheres are uniformly mixed into epoxy resin, and the light scattering block 1013 is formed in the conical hole 1011 by a dispensing process.

[0060] like Figure 6 As shown, the present invention also proposes a Mini-LED backlight module, which is prepared by the above-described method for preparing a Mini-LED backlight module.

[0061] In other preferred technical solutions, the present invention also proposes a method for fabricating a Mini-LED backlight module, comprising: A light-emitting epitaxial wafer is provided, the light-emitting epitaxial wafer comprising a growth substrate and an epitaxial functional layer.

[0062] The epitaxial functional layer of the light-emitting epitaxial wafer is cut to form multiple Mini-LED units.

[0063] The growth substrate is then cut to form multiple growth substrate modules, each of which includes multiple Mini-LED units arranged in an array.

[0064] Next, a first sealing layer is formed on each of the growth substrate modules, the first sealing layer covering the bottom of the Mini-LED unit.

[0065] Next, a second magnetic encapsulation layer is formed on the first sealing layer, and the second magnetic encapsulation layer fills the gap between adjacent Mini-LED units.

[0066] Next, a first electrode and a second electrode are formed on the upper surface of each Mini-LED unit.

[0067] Next, a plurality of conical holes arranged in an array are formed on the surface of the growth substrate of each growth substrate module, and conical magnetic blocks are formed in the conical holes.

[0068] A driving substrate is provided, on which a plurality of first pixel electrodes and a plurality of second pixel electrodes are formed, and a third magnetic encapsulation layer is formed on the driving substrate.

[0069] Next, each of the growth substrate modules is transferred to the driving substrate, so that the second magnetic encapsulation layer and the third magnetic encapsulation layer are magnetically attracted. Then, the driving substrate is heat-treated so that the first electrode and the second electrode of each Mini-LED unit are electrically connected to the corresponding first pixel electrode and the second pixel electrode, respectively.

[0070] A fourth encapsulation layer is formed to encapsulate the growth substrate module, then the tapered magnetic block is removed, and then a light scattering block is formed in the tapered hole.

[0071] In a more preferred technical solution, the specific process for forming the first sealing layer on each of the growth substrate modules is as follows: a resin material is coated in the gap between adjacent Mini-LED units using a slit coating process, the resin material is cured, and then the cured resin material is etched to form the first sealing layer.

[0072] In a more preferred technical solution, the epitaxial functional layer includes an N-type semiconductor layer, a quantum well light-emitting layer, and a P-type semiconductor layer.

[0073] In a more preferred technical solution, during the formation of a first electrode and a second electrode on the upper surface of each Mini-LED unit, the first electrode is electrically connected to the N-type semiconductor layer, and the second electrode is electrically connected to the P-type semiconductor layer.

[0074] In a more preferred technical solution, the specific process for forming the second magnetic encapsulation layer on the first sealing encapsulation layer is as follows: a resin material containing magnetic particles is coated in the gap between adjacent Mini-LED units using a slot coating process, the resin material containing magnetic particles is cured, and then patterned to form the second magnetic encapsulation layer.

[0075] In a better technical solution, the upper surfaces of the first electrode, the second electrode, and the second magnetic encapsulation layer are flush.

[0076] In a better technical solution, the upper surfaces of the first pixel electrode, the second pixel electrode, and the third magnetic encapsulation layer all have grooves.

[0077] In a more preferred technical solution, when each of the growth substrate modules is transferred to the driving substrate, the first electrode is embedded in the first pixel electrode, and the second electrode is embedded in the second pixel electrode.

[0078] In a more preferred technical solution, the present invention also proposes a Mini-LED backlight module, wherein the Mini-LED backlight module is prepared by the above-mentioned Mini-LED backlight module preparation method.

[0079] In the fabrication method of the Mini-LED backlight module of the present invention, by setting each growth substrate module to include multiple Mini-LED units arranged in an array, the growth substrate module can be directly transferred in the subsequent transfer process, greatly reducing the transfer difficulty and the number of transfers. Furthermore, by sequentially setting a first sealing layer and a second magnetic encapsulation layer in the gap between adjacent Mini-LED units, the first sealing layer improves the stability and sealing of each growth substrate module, while the second magnetic encapsulation layer, located in the gap between adjacent Mini-LED units, can magnetically adsorb with a third magnetic encapsulation layer on the driving substrate during the subsequent transfer process, effectively improving the electrical connection stability of the Mini-LED units and increasing transfer accuracy. In addition, grooves are provided on the upper surfaces of the first pixel electrode, the second pixel electrode, and the third magnetic encapsulation layer. When each growth substrate module is transferred to the driving substrate, the first electrode is embedded in the first pixel electrode, and the second electrode is embedded in the second pixel electrode. This further facilitates the transfer of Mini-LED units and improves the fabrication yield and lifespan of the Mini-LED backlight module. Furthermore, by forming multiple arrayed conical holes on the surface of the growth substrate of each growth substrate module and forming conical magnetic blocks in the conical holes, the growth substrate module can be easily transported and transferred during the transfer process. After being transferred to the driving substrate and the conical magnetic blocks are removed, light scattering blocks are then formed in the conical holes, which can further improve the light extraction efficiency of the Mini-LED unit.

[0080] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A method for fabricating a Mini-LED backlight module, characterized in that: include: A light-emitting epitaxial wafer is provided, the light-emitting epitaxial wafer comprising a growth substrate and an epitaxial functional layer; The epitaxial functional layer of the light-emitting epitaxial wafer is cut to form multiple Mini-LED units; The growth substrate is then cut to form multiple growth substrate modules, wherein each growth substrate module includes multiple Mini-LED units arranged in an array. Next, a first sealing layer is formed on each of the growth substrate modules, the first sealing layer covering the bottom of the Mini-LED unit; Next, a second magnetic encapsulation layer is formed on the first sealing encapsulation layer, and the second magnetic encapsulation layer fills the gap between adjacent Mini-LED units; Next, a first electrode and a second electrode are formed on the upper surface of each Mini-LED unit; Next, a plurality of conical holes arranged in an array are formed on the surface of the growth substrate of each growth substrate module, and conical magnetic blocks are formed in the conical holes; A driving substrate is provided, on which a plurality of first pixel electrodes and a plurality of second pixel electrodes are formed, and a third magnetic encapsulation layer is formed on the driving substrate; Next, each of the growth substrate modules is transferred to the driving substrate, so that the second magnetic encapsulation layer and the third magnetic encapsulation layer are magnetically attracted, and then the driving substrate is heat-treated so that the first electrode and the second electrode of each Mini-LED unit are electrically connected to the corresponding first pixel electrode and the second pixel electrode, respectively. A fourth encapsulation layer is formed to encapsulate the growth substrate module, then the tapered magnetic block is removed, and then a light scattering block is formed in the tapered hole.

2. The preparation method of the Mini-LED backlight module according to claim 1, characterized in that: The specific process for forming the first sealing layer on each of the growth substrate modules is as follows: resin material is coated in the gap between adjacent Mini-LED units by slit coating process, the resin material is cured, and the cured resin material is etched to form the first sealing layer.

3. The preparation method of the Mini-LED backlight module according to claim 1, characterized in that: The epitaxial functional layer includes an N-type semiconductor layer, a quantum well light-emitting layer, and a P-type semiconductor layer.

4. The preparation method of the Mini-LED backlight module according to claim 3, characterized in that: During the formation of a first electrode and a second electrode on the upper surface of each Mini-LED unit, the first electrode is electrically connected to the N-type semiconductor layer, and the second electrode is electrically connected to the P-type semiconductor layer.

5. The preparation method of the Mini-LED backlight module according to claim 1, characterized in that: The specific process for forming the second magnetic encapsulation layer on the first sealing encapsulation layer is as follows: a resin material containing magnetic particles is coated in the gap between adjacent Mini-LED units using a slot coating process, the resin material containing magnetic particles is cured, and then patterned to form the second magnetic encapsulation layer.

6. The preparation method of the Mini-LED backlight module according to claim 1, characterized in that: The upper surfaces of the first electrode, the second electrode, and the second magnetic encapsulation layer are flush.

7. The preparation method of the Mini-LED backlight module according to claim 6, characterized in that: The upper surfaces of the first pixel electrode, the second pixel electrode, and the third magnetic encapsulation layer all have grooves.

8. The preparation method of the Mini-LED backlight module according to claim 7, characterized in that: When each of the growth substrate modules is transferred to the driving substrate, the first electrode is embedded in the first pixel electrode, and the second electrode is embedded in the second pixel electrode. 9.A Mini-LED backlight module, characterized in that: The Mini-LED backlight module is prepared using the method described in any one of claims 1-8.

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