A method for preparing wafer-level tungsten diselenide thin films on SiO2 / Si substrates

CN122303832APending Publication Date: 2026-06-30INSTITUTE OF SEMICONDUCTORS HENAN ACADEMY OF SCIENCES

Patent Information

Authority / Receiving Office: CN · China
Patent Type: Applications(China)
Current Assignee / Owner: INSTITUTE OF SEMICONDUCTORS HENAN ACADEMY OF SCIENCES
Filing Date: 2026-05-06
Publication Date: 2026-06-30

AI Technical Summary

Technical Problem

Existing CVD technology has difficulty growing high-quality, uniform tungsten diselenide thin films directly on SiO2/Si substrates, and is incompatible with semiconductor processes, resulting in poor film continuity, wide grain size distribution, and uneven thickness, which cannot meet the requirements of integrated circuit manufacturing.

Method used

The process involves cleaning and hydrophilization of a SiO2/Si substrate, preparation of a tungsten source and inorganic salt precursor solution, coating by spin coating, and then performing high-temperature and low-temperature vapor deposition in a CVD furnace. By controlling the atmosphere and temperature, uniform wafer-level growth of WSe2 thin films can be achieved.

Benefits of technology

High-quality, continuous and uniform WSe2 thin films can be directly grown on SiO2/Si substrates, avoiding the transfer step. This allows for seamless integration with semiconductor processes, with well-defined process parameters and high repeatability, making it suitable for high-performance field-effect transistors and photodetectors.

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Abstract

A method for preparing wafer-level tungsten diselenide (WSe2) thin films on SiO2 / Si substrates belongs to the field of two-dimensional semiconductor material preparation technology. The method includes the following steps: cleaning and hydrophilizing the SiO2 / Si substrate; dissolving a tungsten source and inorganic salt in ammonia water to prepare a precursor solution; coating the precursor solution onto the pretreated substrate surface using spin coating to form a thin film; performing selenium chemical vapor deposition and reaction using a CVD process by controlling the reducing atmosphere and the amount of selenium; after growth, stopping heating and cooling to room temperature under an inert atmosphere to obtain a substrate with a WSe2 thin film. This method can directly achieve reliable growth of wafer-level, continuous, uniform, high-quality WSe2 thin films on SiO2 / Si substrates, completely eliminating the transfer step and seamlessly integrating with current semiconductor planar processes.

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