Polycrystalline silicon reduction furnace and methods for adjusting the gas flow field inside the polycrystalline silicon reduction furnace

Abstract

A polycrystalline silicon reduction furnace and a method for adjusting the gas flow field within the furnace are disclosed. The polycrystalline silicon reduction furnace includes a furnace body and multiple sets of overlapping silicon cores. Multiple air inlets are located at the bottom of the furnace body and are connected to raw material gas delivery pipes. Each silicon core includes two vertically arranged hollow silicon tubes and a crossbeam positioned above the hollow silicon tubes. The hollow space within the hollow silicon tubes serves as an air inlet channel. One end of the air inlet channel connects to a portion of the multiple air inlets, and the other end connects to the space above the polycrystalline silicon reduction furnace. This invention utilizes the hollow space of the hollow silicon tubes as an air inlet channel, allowing the raw material gas to enter the furnace from the top. This not only avoids leakage problems caused by opening air inlets above the furnace but also makes the gas flow field within the furnace more uniform, increases the reduction surface area, and improves the growth rate of the silicon rods, thus overcoming the limitation that hollow silicon cores can only produce hollow silicon rods.

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