Light emitting diode and display device

Abstract

Embodiments of this disclosure relate to light-emitting diodes (LEDs) and display devices. More specifically, the LED and display device include: a substrate; a first semiconductor layer disposed on the substrate; a light-emitting layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the light-emitting layer; a first electrode connected to the first semiconductor layer; and a second electrode disposed on and connected to the second semiconductor layer. The first electrode is connected to the first semiconductor layer through vias in the second semiconductor layer and the light-emitting layer. By maximizing the area of ​​the light-emitting layer, a LED and display device with high luminous efficiency can be provided.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0198007, filed on December 27, 2024, which is incorporated herein by reference for all purposes as if fully set forth herein. Technical Field

[0003] Embodiments of this disclosure relate to light-emitting diodes and display devices. Background Technology

[0004] In recent years, the luminous efficiency of light-emitting diodes (LEDs) has become increasingly important for display devices that provide higher resolution, image quality, and stability. In display devices, luminous efficiency can decrease due to the non-emitting areas of the LEDs. Summary of the Invention

[0005] Embodiments of this disclosure may provide light-emitting diodes and display devices with improved luminous efficiency.

[0006] Embodiments of this disclosure can provide light-emitting diodes and display devices that can achieve high resolution by maximizing the area of ​​the light-emitting layer.

[0007] According to embodiments of this disclosure, a display device includes a substrate and a light-emitting diode (LED) disposed on the substrate. The LED includes a first semiconductor layer, a light-emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, a first electrode connected to the first semiconductor layer, and a second electrode disposed on and connected to the second semiconductor layer. The first electrode can be connected to the first semiconductor layer through a via formed in the second semiconductor layer and the light-emitting layer.

[0008] According to another embodiment of this disclosure, a light-emitting diode includes a first semiconductor layer, a light-emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, a first electrode connected to the first semiconductor layer, and a second electrode disposed on and connected to the second semiconductor layer. The first electrode can be connected to the first semiconductor layer through a via formed in the second semiconductor layer and the light-emitting layer.

[0009] According to another embodiment of this disclosure, the display device includes a substrate, a first semiconductor layer disposed on the substrate, a light-emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, a first electrode disposed on the second semiconductor layer and connected to the second semiconductor layer, and a second electrode connected to the first semiconductor layer. The top surface of the second semiconductor layer has a sloped portion. The light-emitting layer includes a first light-emitting layer overlapping the first electrode, a second light-emitting layer located near the second electrode, and a third light-emitting layer connecting the first light-emitting layer and the second light-emitting layer. The third light-emitting layer may have a slope corresponding to the sloped portion.

[0010] According to embodiments of the present disclosure, light-emitting diodes and display devices with improved luminous efficiency can be provided.

[0011] Embodiments of this disclosure can provide light-emitting diodes and display devices that can achieve high resolution by maximizing the area of ​​the light-emitting layer.

[0012] According to embodiments of the present disclosure, light-emitting diodes and display devices with improved brightness uniformity depending on the viewing angle of the display panel can be provided.

[0013] According to embodiments of this disclosure, low-power light-emitting diodes and display devices can be provided by improving the efficiency of light-emitting diodes. Attached Figure Description

[0014] Figure 1 This is a cross-sectional view showing a light-emitting diode disposed on a substrate according to an embodiment of the present disclosure.

[0015] Figure 2 This is a plan view showing a light-emitting diode according to an embodiment of the present disclosure.

[0016] Figures 3 to 10 This is a view illustrating a manufacturing process for forming a light-emitting diode according to an embodiment of the present disclosure.

[0017] Figure 11 This is a view showing the configuration of an electronic device according to an embodiment of the present disclosure.

[0018] Figure 12 This is a view schematically illustrating the configuration of a display device according to an embodiment of the present disclosure.

[0019] Figure 13 This is a circuit diagram of a sub-pixel according to an embodiment of the present disclosure. Detailed Implementation

[0020] In the following description of examples or embodiments of the invention, reference will be made to the accompanying drawings, in which specific examples or embodiments that may be implemented are illustrated by way of illustration, and in which the same reference numerals and symbols may be used to denote the same or similar components, even when these components are shown in different drawings. Furthermore, in the following description of examples or embodiments of the invention, detailed descriptions of well-known functions and components incorporated herein may be omitted where such detailed descriptions would make the subject matter of some embodiments of the invention considerably unclear. Terms such as “comprising,” “having,” “including,” “constituting,” “made of,” and “formed by” as used herein are generally intended to allow for the addition of additional components, unless said terms are used in conjunction with the term “only.” As used herein, the singular form is intended to include the plural form unless the context clearly indicates otherwise.

[0021] The elements of the present invention may be described herein using terms such as “first,” “second,” “A,” “B,” “(A),” or “(B).” Each of these terms is not intended to define the nature, order, sequence, or number of the elements, but is merely used to distinguish the corresponding element from other elements.

[0022] When referring to a first element being "connected or coupled to" a second element, or "in contact with or overlapping" a second element, it should be interpreted as meaning that not only can the first element be "directly connected or coupled to" the second element or "directly in contact with or overlapping" a second element, but a third element can also be "inserted" between the first and second elements, or the first and second elements can be "connected or coupled," "in contact with," or "overlapped" with each other via a fourth element. Here, the second element can be included in at least one of two or more elements that are "connected or coupled," "in contact with," or "overlapped" with each other.

[0023] When time-related terms such as “after,” “later,” “next,” or “before” are used to describe a process or operation of an element or configuration, or a flow or step in an operation, processing, or manufacturing method, these terms may be used to describe a discontinuous or non-sequential process or operation, unless used with the terms “directly” or “immediately.”

[0024] Additionally, when referring to any size, relative dimensions, etc., even without a specific description, the numerical values ​​or corresponding information (e.g., levels, ranges, etc.) of the component or feature should be considered, including tolerances or error ranges that may be caused by various factors (e.g., process factors, internal or external influences, noise, etc.). Furthermore, the term "can" fully encompasses all the meanings of the term "able to".

[0025] Various embodiments of this specification will be described in detail with reference to the accompanying drawings.

[0026] Figure 1 This is a cross-sectional view showing a portion of a display device 1200 according to an embodiment of the present disclosure.

[0027] Reference Figure 1 The display device 1200 according to this embodiment may include a substrate 100 and a light-emitting diode ED.

[0028] The cathode electrode 110 may be disposed on the substrate 100. The anode electrode 120 may be disposed on the substrate 100 at a distance from the cathode electrode 110.

[0029] The substrate 100 may also include a driving element (not shown), and the cathode electrode 110 may be disposed on the driving element and electrically connected to the driving element to supply a low potential signal to the light-emitting diode ED.

[0030] The insulating layer 130 can be disposed on the substrate 100.

[0031] For example, insulating layer 130 can be an adhesive layer.

[0032] The light-emitting diode can be disposed on the insulating layer 130.

[0033] The light-emitting diode (ED) according to this embodiment may include a light-emitting layer 142, a first electrode 160, and a second electrode 150.

[0034] The third semiconductor layer 140 can be disposed on the insulating layer 130.

[0035] The first semiconductor layer 141 can be disposed on the third semiconductor layer 140.

[0036] The light-emitting layer 142 can be disposed on the first semiconductor layer 141.

[0037] The second semiconductor layer 143 can be disposed on the light-emitting layer 142.

[0038] The first electrode 160 and the second electrode 150 can be set using a predetermined interval between them.

[0039] The first electrode 160 can be formed on the first semiconductor layer 141 and can be connected to the first semiconductor layer 141.

[0040] The first electrode 160 can be connected to the first semiconductor layer 141 through the via 175 in the second semiconductor layer 143 and the light-emitting layer 142.

[0041] The second electrode 150 can be disposed on the second semiconductor layer 143 and can be connected to the second semiconductor layer 143.

[0042] The light-emitting layer 142 may include a first light-emitting layer 142a overlapping with the second electrode 150, and a second light-emitting layer 142b that is continuous with the first light-emitting layer 142a, spaced apart from and adjacent to the first electrode 160, and surrounds the side surface of the first electrode 160.

[0043] The distance between the substrate 100 and the first light-emitting layer 142a can be greater than the distance between the substrate 100 and the second light-emitting layer 142b.

[0044] The anode electrode 120 may be disposed on the substrate 100 and between the substrate 100 and the first semiconductor layer 141 to provide a high potential signal.

[0045] It may also include a first connecting electrode 180 to electrically connect the second electrode 150 and the anode electrode 120.

[0046] It may also include a first pad 170 to electrically connect the first connection electrode 180 and the second electrode 150; however, this disclosure is not limited thereto, and the first pad 170 may be omitted.

[0047] The second electrode 150, the first pad 170, and the first connecting electrode 180 can be transparent electrodes.

[0048] The cathode electrode 110 can be disposed between the substrate 100 and the first semiconductor layer 141.

[0049] It may also include a second connecting electrode 190 to electrically connect the cathode electrode 110 and the first electrode 160.

[0050] The second connection electrode 190 can be disposed along the side surface of the first semiconductor layer 141, the light-emitting layer 142, and the second semiconductor layer 143.

[0051] In the light-emitting diode ED according to this embodiment, at least a portion of the light-emitting layer 142 may overlap with the second connecting electrode 190.

[0052] It may also include a second pad 171 to electrically connect the second connection electrode 190 and the first electrode 160.

[0053] The second connecting electrode 190 and the second pad 171 can be transparent electrodes.

[0054] It may also include an insulating layer 135 disposed on the second semiconductor layer 143 and the second electrode 150, and the insulating layer 135 may extend along the side surfaces of the second semiconductor layer 143, the light-emitting layer 142, the first semiconductor layer 141 and the third semiconductor layer 140.

[0055] The insulating layer 135 may include a first opening 155 that overlaps with a portion of the second electrode 150 and a second opening 165 that corresponds to the first electrode 160.

[0056] The first opening 155 of the insulating layer 135 can expose at least a portion of the second electrode 150, and the second opening 165 of the insulating layer 135 can expose a portion of the first semiconductor layer 141 and at least a portion of the first electrode 160.

[0057] The second opening 165 can correspond to the first electrode 160.

[0058] The second opening 165 can be included in the through hole 175.

[0059] The insulating layer 135 may extend along the inner sidewall of the through hole 175.

[0060] The region of the light-emitting layer 142 surrounding the through-hole 175 can be separated from the first electrode 160 by the insulating layer 135.

[0061] The light-emitting layer 142 can contact the portion of the insulating layer 135 that extends along the inner sidewall of the through hole 175.

[0062] The third semiconductor layer 140 may be disposed between the substrate 100 and the first semiconductor layer 141, and may include undoped semiconductor material.

[0063] A display device according to embodiments of the present disclosure may include a light-emitting diode (LED) and a driving circuit for driving the LED. The LED may include a first semiconductor layer 141, a light-emitting layer 142 disposed on the first semiconductor layer 141, a second semiconductor layer 143 disposed on the light-emitting layer 142, a first electrode 160 connected to the first semiconductor layer 141, and a second electrode 150 disposed on and connected to the second semiconductor layer 143. The first electrode 160 may be connected to the first semiconductor layer 141 through a via 175 penetrating the second semiconductor layer 143 and the light-emitting layer 142.

[0064] According to embodiments of the present disclosure, a light-emitting diode (ED) can be included in a sub-pixel (SP) of a display panel.

[0065] According to embodiments of the present disclosure, a light-emitting diode (ED) can be included in a backlight unit that supplies light to a display panel.

[0066] The light-emitting diode (ED) according to embodiments of the present disclosure can be included in a lighting device.

[0067] A display device according to embodiments of the present disclosure may include: a substrate 100; a first semiconductor layer 141 disposed on the substrate 100; a light-emitting layer 142 disposed on the first semiconductor layer 141; a second semiconductor layer 143 disposed on the light-emitting layer 142; a first electrode 160 disposed on and connected to the second semiconductor layer 143; and a second electrode 150 connected to the first semiconductor layer 141. The second semiconductor layer 143 may include a flat portion overlapping the second electrode 150 and another flat portion surrounding the first electrode 160. The second semiconductor layer 143 may also include an inclined portion connecting the flat portion overlapping the second electrode 150 and the flat portion surrounding the first electrode 160. The light-emitting layer 142 may include a first light-emitting layer 142a having a flat shape and overlapping the second electrode 150, a second light-emitting layer 142b having a flat shape and spaced apart from and surrounding the first electrode 160, and a third light-emitting layer 142c connecting the first light-emitting layer 142a and the second light-emitting layer 142b. The third light-emitting layer 142c may have a tilt angle corresponding to the tilted portion of the second semiconductor layer 143.

[0068] The display device according to embodiments of the present disclosure may include Figure 1 The light-emitting diode (ED) described in [the document].

[0069] The distance between the substrate 100 and the first light-emitting layer 142a can be greater than the distance between the substrate 100 and the second light-emitting layer 142b.

[0070] A portion of the light-emitting layer 142 may be configured to overlap with the lower portion of the second pad 171.

[0071] At least a portion of the light-emitting layer 142 may be disposed below the second connecting electrode 190.

[0072] Figure 2 This is a plan view showing a light-emitting diode (ED) according to an embodiment of the present disclosure.

[0073] The light-emitting diode ED may include a first region 200 and a second region 210.

[0074] According to embodiments of the present disclosure, a light-emitting diode (ED) can emit light in a second region 210 other than the region occupied by the first region 200 and the first electrode 160.

[0075] The light-emitting diode ED can emit light in at least a portion of the area of ​​the second pad 171.

[0076] The width of the second pad 171 can completely overlap and cover the first electrode 160, and can be greater than the width of the first electrode 160.

[0077] Figures 3 to 10 This is a diagram illustrating a process flow for manufacturing a light-emitting diode (ED) according to an embodiment of the present disclosure.

[0078] Reference Figure 3 The third semiconductor layer 140 can be deposited on the wafer 300, and the first semiconductor layer 141 can be deposited on the third semiconductor layer 140. For example, the third semiconductor layer 140 can be an undoped semiconductor layer, and the first semiconductor layer 141 can include an n-type semiconductor material.

[0079] Reference Figure 4 An etching process can be performed. In this case, the first semiconductor layer 141 can be etched to form at least two flat layers of different heights and a sloping portion connecting the two layers.

[0080] Reference Figure 5 The light-emitting layer 142 can be formed on the upper surface of the first semiconductor layer 141.

[0081] The light-emitting layer 142 can be a layer that emits light based on the band gap difference of the material forming the light-emitting layer 142, by means of the recombination of holes injected through the first semiconductor layer 141 and electrons injected through the second semiconductor layer 143. For example... Figure 4 As shown, the light-emitting layer 142 can be formed to conform to the shape of two flat portions and an inclined portion connecting the two flat portions in the first semiconductor layer 141.

[0082] Reference Figure 6 The second semiconductor layer 143 can be formed on the upper surface of the light-emitting layer 142, and the second semiconductor layer 143 can also be formed to conform to the shape of the light-emitting layer 142.

[0083] Reference Figure 7 The second electrode 150 may be formed on a portion of the higher layer of the second semiconductor layer 143, which has two layers.

[0084] Reference Figure 8 The via 175 can be formed by photolithography to penetrate a portion of the lower height region of the second semiconductor layer 143, expose a portion of the side surface of the second semiconductor layer 143, and expose a portion of the upper surface of the lower height first semiconductor layer 141.

[0085] Reference Figure 9 An insulating layer 135 can be deposited. The insulating layer 135 can be formed as a portion of the upper surface of the second electrode 150 exposed and a portion of the upper surface of the first semiconductor layer 141 exposed through the via 175.

[0086] The exposed upper surface of the first semiconductor layer 141 may correspond to the via 175. The insulating layer 135 may be disposed along the inner sidewall of the via 175. The light-emitting layer 142 may contact the portion of the insulating layer 135 extending along the inner sidewall of the via 175.

[0087] Reference Figure 10 The first electrode 160 can be formed to cover the exposed portion of the first semiconductor layer 141 and fill the via 175. Subsequently, the first pad 170 can be formed to cover the exposed second electrode 150, and the second pad 171 can be formed to cover the upper surface of the exposed first electrode 160.

[0088] The light-emitting layer 142 around the through hole 175 can be separated from the first electrode 160 through the insulating layer 135.

[0089] The first semiconductor layer 141 may include a first portion P1 overlapping with the first electrode 160 and a second portion P2 overlapping with the second electrode 150. The thickness of the second portion P2 may be greater than the thickness of the first portion P1.

[0090] Figure 11 This is a diagram illustrating the configuration of a display device according to an embodiment of the present disclosure.

[0091] Reference Figure 11 The display device may include a driving circuit and a light-emitting diode (ED).

[0092] According to embodiments of the present disclosure, a light-emitting diode (ED) can be disposed in a sub-pixel SP of a display device 1200, and can emit light according to a driving signal received from a driving circuit.

[0093] Figure 12 This is a diagram illustrating a schematic configuration of a display device according to an embodiment of the present disclosure.

[0094] Reference Figure 12 The display device 1200 may include a display panel 1210, a data driving circuit 1230, a gate driving circuit 1220, and a controller 1240.

[0095] The display panel 1210 may include a display area DA for displaying images and a non-display area NDA for not displaying images.

[0096] The display panel 1210 may include a substrate 1211, a plurality of sub-pixels SP disposed on the substrate 1211, and various signal lines for driving the sub-pixels SP. The plurality of sub-pixels SP may be disposed in a display area DA.

[0097] Various signal lines may include multiple data lines DL that transmit data signals (also known as data voltages or image signals) and multiple gate lines GL that transmit gate signals (also known as scan signals). The multiple data lines DL and the multiple gate lines GL may intersect each other.

[0098] Each of the multiple data lines DL can extend in a first direction, and each of the multiple gate lines GL can extend in a second direction. Here, the first direction can be a column direction, and the second direction can be a row direction, or vice versa. For ease of explanation, it is assumed below that the data lines DL extend in the column direction and the gate lines GL extend in the row direction.

[0099] The data driving circuit 1230 can be a circuit for driving the data line DL and can output a data signal to the data line DL. The gate driving circuit 1220 can be a circuit for driving the gate line GL and can output a gate signal to the gate line GL. The controller 1240 can be a device for controlling the data driving circuit 1230 and the gate driving circuit 1220, and can control the driving timing of the data line DL and the gate line GL.

[0100] The controller 1240 can supply a data drive control signal DCS to the data drive circuit 1230 to control the data drive circuit 1230, and can supply a gate drive control signal GSC to the gate drive circuit 1220 to control the gate drive circuit 1220.

[0101] The data drive circuit 1230 can supply data signals DATA to multiple data lines DL according to the timing control of the controller 1240. The data drive circuit 1230 can receive digital image data from the controller 1240, convert the received image data into analog data signals, and output them to multiple data lines DL.

[0102] The gate drive circuit 1220 can supply gate signals to multiple gate lines GL according to the timing control of the controller 1240. The gate drive circuit 1220 can receive various gate drive control signals (e.g., start signal, reset signal, etc.) as well as a first gate voltage corresponding to the on level and a second gate voltage corresponding to the off level, generate gate signals, and supply the generated gate signals to multiple gate lines GL.

[0103] For example, the data driving circuit 1230 can be connected to the display panel 1210 via a tape-on-absence (TAB) method, or to the bonding pads of the display panel 1210 via a chip-on-glass (COG) or chip-on-board (COP) method, or implemented and connected to the display panel 1210 via a chip-on-film (COF) method. In the following description, for ease of explanation, it is assumed that the data driving circuit 1230 is connected to the display panel 1210 via the chip-on-film (COF) method.

[0104] The gate drive circuit 1220 can be connected to the display panel 1210 via a tape-on-board (TAB) method, or to the bonding pads of the display panel 1210 via a COG or COP method, or to the display panel 1210 via a COF method. Alternatively, the gate drive circuit 1220 can be disposed in the non-active or active area of ​​the display panel 1210 as a gate-in-panel (GIP) type.

[0105] Meanwhile, at least one of the data driving circuit 1230 and the gate driving circuit 1220 can be disposed in the active area of ​​the display panel 1210. For example, at least one of the data driving circuit 1230 and the gate driving circuit 1220 can be configured not to overlap with the sub-pixel SP, or all or part of at least one of the data driving circuit 1230 and the gate driving circuit 1220 can be configured to overlap with the sub-pixel SP.

[0106] The data driving circuit 1230 can be connected to one side of the display panel 1210 (e.g., the top or bottom side). Depending on the driving scheme and panel design, the data driving circuit 1230 can be connected to both sides of the display panel 1210 (e.g., the top and bottom sides), or to two or more of the four sides of the display panel 1210.

[0107] The gate drive circuit 1220 can be connected to one side of the display panel 1210 (e.g., the left or right side). Depending on the driving scheme and panel design, the gate drive circuit 1220 can be connected to both sides of the display panel 1210 (e.g., the left and right sides), or to two or more of the four sides of the display panel 1210.

[0108] The controller 1240 can be implemented as a separate component from the data drive circuit 1230, or it can be integrated with the data drive circuit 1230 as an integrated circuit. The controller 1240 can be a timing controller commonly used in display technology, a control device including a timing controller and performing additional control functions, a control device other than a timing controller, or circuitry within a control device. The controller 1240 can be implemented using various circuits or electronic components such as ICs (integrated circuits), FPGAs (field-programmable gate arrays), ASICs (application-specific integrated circuits), or processors.

[0109] The controller 1240 can be mounted on a printed circuit board or flexible printed circuit board and can be electrically connected to the data drive circuit 1230 and the gate drive circuit 1220 via the printed circuit board or flexible printed circuit board. The controller 1240 can send signals to and receive signals from the data drive circuit 1230 according to one or more predetermined interfaces. For example, the interface may include an LVDS (Low Voltage Differential Signaling) interface, an EPI interface, or an SPI (Serial Peripheral Interface) interface.

[0110] Figure 13 This is a circuit diagram of a sub-pixel according to an embodiment of the present disclosure.

[0111] Reference Figure 13 The sub-pixel SP disposed in the display panel 110 of the display device 100 according to an embodiment of the present disclosure may include one or more transistors and capacitors, and may include a light-emitting diode ED. For example, the sub-pixel SP may include a driving transistor DRT, a scanning transistor SCT, a storage capacitor Cst, and a light-emitting diode ED.

[0112] The driving transistor DRT can be a transistor used to drive a light-emitting diode ED, and can include a first node N1, a second node N2, and a third node N3.

[0113] The first node N1 of the driving transistor DRT can be the gate node of the driving transistor DRT and can be electrically connected to the source or drain node of the scanning transistor SCT. The second node N2 of the driving transistor DRT can be the source or drain node of the driving transistor DRT and can be electrically connected to the pixel electrode PE of the light-emitting diode ED. The third node N3 of the driving transistor DRT can be electrically connected to the driving voltage line DVL that supplies the driving voltage EVDD.

[0114] The scan transistor SCT can be controlled by the scan pulse SCAN, which is a gate signal connected between the first node N1 of the driving transistor DRT and the data line DL. In other words, the scan transistor SCT can be turned on or off according to the scan pulse SCAN supplied from the scan line SCL, which is a type of gate line GL, thereby controlling the connection between the data line DL and the first node N1 of the driving transistor DRT.

[0115] The scanning transistor SCT can be turned on by the scanning pulse SCAN with a turn-on voltage, and the data signal Vdata supplied from the data line DL can be sent to the first node N1 of the driving transistor DRT.

[0116] Here, if the scanning transistor SCT is an n-type transistor, the on-state voltage of the scanning pulse SCAN can be a high-level voltage. If the scanning transistor SCT is a p-type transistor, the on-state voltage of the scanning pulse SCAN can be a low-level voltage.

[0117] A storage capacitor Cst can be connected between the first node N1 and the second node N2 of the driving transistor DRT. The storage capacitor Cst can be charged with an amount of charge corresponding to the voltage difference between the two terminals, and this voltage difference can be maintained for a predetermined frame time. Therefore, the corresponding sub-pixel SP can emit light during the predetermined frame time.

[0118] The light-emitting diode (ED) according to embodiments of the present disclosure can be used as a light source in both edge-lit backlight units and direct-lit backlight units. The light-emitting diode (ED) according to embodiments of the present disclosure can be used in lighting devices.

[0119] The embodiments of this disclosure described above are briefly summarized below.

[0120] A display device according to embodiments of the present disclosure may include a light-emitting diode (LED) disposed on a substrate. The LED may include a first semiconductor layer disposed on the substrate, a light-emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, a first electrode connected to the first semiconductor layer, and a second electrode disposed on and connected to the second semiconductor layer. The first electrode may be connected to the first semiconductor layer through vias in the second semiconductor layer and the light-emitting layer.

[0121] In a light-emitting device according to an embodiment of the present disclosure, the light-emitting layer may include a first light-emitting layer overlapping with the second electrode and a second light-emitting layer extending from the first light-emitting layer and located near the first electrode, and the distance between the substrate and the first light-emitting layer may be greater than the distance between the substrate and the second light-emitting layer.

[0122] The light-emitting diode according to embodiments of the present disclosure may further include an anode electrode disposed on a substrate and a first connecting electrode electrically connecting a second electrode and an anode electrode.

[0123] The light-emitting diode according to embodiments of the present disclosure may further include a first pad electrically connected to the first connecting electrode and the second electrode.

[0124] The second electrode and the first connecting electrode according to embodiments of this disclosure may be transparent electrodes.

[0125] The light-emitting diode according to embodiments of the present disclosure may further include a cathode electrode disposed between a substrate and a first semiconductor layer, and a second connecting electrode electrically connecting the cathode electrode and the first electrode. The second connecting electrode may be disposed along the side surface of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.

[0126] At least a portion of the light-emitting layer in the light-emitting diode according to embodiments of the present disclosure may overlap with the second connecting electrode.

[0127] The light-emitting diode according to embodiments of the present disclosure may further include a second pad electrically connecting the second connection electrode and the first electrode.

[0128] According to embodiments of the present disclosure, the second connection electrode of the light-emitting diode can be a transparent electrode.

[0129] The light-emitting diode according to embodiments of the present disclosure may further include an insulating layer disposed on a second semiconductor layer and a second electrode, and extending along the side surfaces of the second semiconductor layer, the light-emitting layer, and the first semiconductor layer. The insulating layer may include a first opening overlapping a portion of the second electrode and a second opening overlapping the first electrode. The second opening may correspond to a via, and the insulating layer may extend along the inner surface of the via.

[0130] In a light-emitting diode according to an embodiment of the present disclosure, the light-emitting layer around the via can be separated from the first electrode by an insulating layer.

[0131] According to embodiments of the present disclosure, the light-emitting layer in a light-emitting diode can contact a portion of the insulating layer extending along the inner surface of a via.

[0132] The light-emitting diode according to embodiments of the present disclosure may further include a third semiconductor layer disposed between the substrate and the first semiconductor layer and comprising an undoped semiconductor material.

[0133] A display device according to embodiments of the present disclosure may include a first semiconductor layer, a light-emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, a first electrode connected to the first semiconductor layer, and a second electrode disposed on and connected to the second semiconductor layer. The first electrode may be connected to the first semiconductor layer through vias in the second semiconductor layer and the light-emitting layer.

[0134] According to embodiments of this disclosure, the light-emitting layer may include a first light-emitting layer overlapping with the second electrode and a second light-emitting layer extending from the first light-emitting layer and disposed adjacent to the first electrode. The first semiconductor layer may include a first portion overlapping with the first electrode and a second portion overlapping with the second electrode, and the second portion may have a greater thickness than the first portion.

[0135] The light-emitting diode according to embodiments of the present disclosure may further include an insulating layer disposed on a second semiconductor layer and a second electrode, and extending along the side surfaces of the second semiconductor layer, the light-emitting layer, and the first semiconductor layer. The insulating layer may include a first opening overlapping a portion of the second electrode and a second opening overlapping the first electrode. The second opening may correspond to a via, and the insulating layer may extend along the inner surface of the via.

[0136] In a light-emitting diode according to an embodiment of the present disclosure, the light-emitting layer around the via can be separated from the first electrode by an insulating layer.

[0137] A display device according to embodiments of the present disclosure may include a substrate, a first semiconductor layer disposed on the substrate, a light-emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, a first electrode disposed on the second semiconductor layer and connected to the second semiconductor layer, and a second electrode connected to the first semiconductor layer. The upper surface of the second semiconductor layer may have a sloped region, and the light-emitting layer may include a first light-emitting layer overlapping the first electrode, a second light-emitting layer adjacent to the second electrode, and a third light-emitting layer connecting the first and second light-emitting layers. The third light-emitting layer may have a slope corresponding to the sloped region of the second semiconductor layer. In the display device according to embodiments of the present disclosure, the light-emitting layer may include a first light-emitting layer overlapping the second electrode and a second light-emitting layer extending from the first light-emitting layer and disposed adjacent to the first electrode. The distance between the substrate and the first light-emitting layer may be greater than the distance between the substrate and the second light-emitting layer.

[0138] The display device according to embodiments of the present disclosure may further include an insulating layer disposed on a second semiconductor layer and a second electrode, and extending along the side surfaces of the second semiconductor layer, the light-emitting layer, and the first semiconductor layer. The insulating layer may include a first opening overlapping a portion of the second electrode and a second opening overlapping the first electrode. The second opening may correspond to a through-hole, and the insulating layer may extend along the inner surface of the through-hole.

[0139] The above description is presented to enable any person skilled in the art to make and use the technical concepts of the present invention, and is provided in the context of a particular application and its requirements. Various modifications, additions, and substitutions to the described embodiments will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other embodiments and applications without departing from the spirit and scope of the invention. The above description and drawings provide examples of the technical concepts of the invention for illustrative purposes only. That is, the disclosed embodiments are intended to illustrate the scope of the technical concepts of the invention.

[0140] Description of reference numerals in the attached figures:

[0141] 100: Substrate

[0142] 110: Cathode electrode

[0143] 120: Anode electrode

[0144] 141: First semiconductor layer

[0145] 142: Emissive layer

[0146] 143: Second semiconductor layer

[0147] 150: First electrode

[0148] 160: Second electrode

Claims

1. A display device, comprising: substrate; as well as Light-emitting diodes disposed on the substrate The light-emitting diode includes: A first semiconductor layer disposed on the substrate; A light-emitting layer disposed on the first semiconductor layer; A second semiconductor layer disposed on the light-emitting layer; The first electrode connected to the first semiconductor layer; and A second electrode is disposed on and connected to the second semiconductor layer. The first electrode is connected to the first semiconductor layer through a via formed in the second semiconductor layer and the light-emitting layer.

2. The display device according to claim 1, in, The light-emitting layer includes: The first light-emitting layer overlapping the second electrode; and A second light-emitting layer extends from the first light-emitting layer and is adjacent to the first electrode, and Wherein, the distance between the substrate and the first light-emitting layer is greater than the distance between the substrate and the second light-emitting layer.

3. The display device according to claim 1, further comprising: Anode electrode disposed on the substrate; as well as The second electrode is electrically connected to the first connection electrode of the anode electrode.

4. The display device according to claim 3 further includes a first pad electrically connecting the first connecting electrode and the second electrode.

5. The display device according to claim 3, in, The second electrode and the first connecting electrode are transparent electrodes.

6. The display device according to claim 1, further comprising: A cathode electrode disposed between the substrate and the first semiconductor layer; as well as A second connecting electrode electrically connects the cathode electrode and the first electrode. The second connecting electrode extends along the side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.

7. The display device according to claim 6, wherein, At least a portion of the light-emitting layer overlaps with the second connecting electrode.

8. The display device according to claim 6, further comprising a second pad electrically connecting the second connecting electrode and the first electrode.

9. The display device according to claim 6, wherein, The second connecting electrode is a transparent electrode.

10. The display device according to claim 1, further comprising an insulating layer disposed on the second semiconductor layer and the second electrode, the insulating layer extending along the side surfaces of the second semiconductor layer, the light-emitting layer and the first semiconductor layer, wherein, The insulating layer includes: The first opening overlaps with a portion of the second electrode; and The second opening overlaps with the first electrode. Wherein, the second opening corresponds to the through hole, and The insulating layer extends along the inner surface of the through hole.

11. The display device according to claim 10, wherein, The light-emitting layer around the through-hole is separated from the first electrode by the insulating layer.

12. The display device according to claim 10, wherein, The light-emitting layer contacts a portion of the insulating layer extending along the inner surface of the through-hole.

13. The display device according to claim 1, further comprising a third semiconductor layer disposed between the substrate and the first semiconductor layer, the third semiconductor layer comprising an undoped semiconductor material.

14. A light-emitting diode, comprising: First semiconductor layer; A light-emitting layer disposed on the first semiconductor layer; A second semiconductor layer disposed on the light-emitting layer; A first electrode connected to the first semiconductor layer; as well as A second electrode is disposed on and connected to the second semiconductor layer. The first electrode is connected to the first semiconductor layer through a via formed in the second semiconductor layer and the light-emitting layer.

15. The light-emitting diode according to claim 14, in, The light-emitting layer includes: The first light-emitting layer overlapping the second electrode; and A second light-emitting layer extends from the first light-emitting layer and is adjacent to the first electrode. The first semiconductor layer includes: The first portion overlapping with the first electrode, and The second portion that overlaps with the second electrode, and The second part is thicker than the first part.

16. The light-emitting diode of claim 14, further comprising an insulating layer disposed on the second semiconductor layer and the second electrode and extending along the side surfaces of the second semiconductor layer, the light-emitting layer and the first semiconductor layer. in, The insulating layer includes: The first opening overlaps with a portion of the second electrode; and The second opening overlaps with the first electrode. Wherein, the second opening corresponds to the through hole, and The insulating layer extends along the inner surface of the through hole.

17. The light-emitting diode according to claim 16, wherein, The light-emitting layer around the through-hole is separated from the first electrode by the insulating layer.

18. A display device, comprising: substrate; A first semiconductor layer disposed on the substrate; A light-emitting layer disposed on the first semiconductor layer; A second semiconductor layer disposed on the light-emitting layer; A first electrode is disposed on and connected to the second semiconductor layer; as well as The second electrode is connected to the first semiconductor layer. The upper surface of the second semiconductor layer includes a sloped portion. The light-emitting layer includes: The first light-emitting layer overlapping the first electrode; The second light-emitting layer adjacent to the second electrode; and A third light-emitting layer connects the first light-emitting layer and the second light-emitting layer, and The third light-emitting layer has a tilt angle corresponding to the tilted portion.

19. The display device according to claim 18, in, The light-emitting layer includes: The first light-emitting layer overlapping the second electrode; and A second light-emitting layer extends from the first light-emitting layer and is adjacent to the first electrode, and Wherein, the distance between the substrate and the first light-emitting layer is greater than the distance between the substrate and the second light-emitting layer.

20. The display device of claim 18, further comprising an insulating layer disposed on the second semiconductor layer and the second electrode, the insulating layer extending along a side surface of the second semiconductor layer, the light-emitting layer, and the first semiconductor layer. in, The insulating layer includes: The first opening overlaps with a portion of the second electrode; and The second opening overlaps with the first electrode. Wherein, the second opening corresponds to the through hole, and The insulating layer extends along the inner surface of the through hole.

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