Optoelectronic devices and electronic equipment

Abstract

This application discloses an optoelectronic device and an electronic device. The optoelectronic device includes an anode, an active layer, and a cathode stacked sequentially. In the direction from the anode to the cathode, the active layer includes a first quantum dot layer to an Nth quantum dot layer stacked sequentially, where N is a positive integer greater than or equal to 2. In the first quantum dot layer to the Nth quantum dot layer, the absolute value of the valence band of the quantum dots in any odd-numbered quantum dot layer is greater than the absolute value of the valence band of the quantum dots in any even-numbered quantum dot layer. This can promote a balance between the electron injection level and the hole injection level of the optoelectronic device, thereby improving the device lifetime.

Description

Technical Field

[0001] This application relates to the field of optoelectronic technology, specifically to an optoelectronic device and an electronic device. Background Technology

[0002] Optoelectronic devices refer to a class of devices made using the photoelectric effect of semiconductors, including but not limited to optoelectronic devices, solar cells, or photodetectors. Taking light-emitting devices as an example, light-emitting devices include, but are not limited to, organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). OLEDs / QLEDs have a "sandwich" structure, which includes an anode, a cathode, and a light-emitting layer. The anode and cathode are positioned opposite each other, and the light-emitting layer is positioned between the anode and cathode. The light-emitting principle of OLEDs / QLEDs is as follows: electrons are injected from the cathode into the light-emitting region, and holes are injected from the anode into the light-emitting region. Electrons and holes recombine in the light-emitting region to form excitons. The recombinated excitons release photons through radiative transitions, thereby emitting light.

[0003] After years of development, optoelectronic devices have made significant progress in performance indicators and demonstrated enormous application potential. However, shortcomings still exist, such as the need to further improve device lifespan. Therefore, improving the performance stability of optoelectronic devices is of great significance for their application and development. Summary of the Invention

[0004] In view of the shortcomings of the prior art, this application provides an optoelectronic device and an electronic device.

[0005] The technical solution of this application is as follows:

[0006] In a first aspect, this application provides an optoelectronic device, comprising:

[0007] The anode and cathode are arranged opposite each other; and

[0008] An active layer is disposed between the anode and the cathode;

[0009] Wherein, in the direction from the anode to the cathode, the active layer includes a first quantum dot layer to an Nth quantum dot layer stacked sequentially, where N is a positive integer greater than or equal to 2; in the first quantum dot layer to the Nth quantum dot layer, the absolute value of the valence band of the quantum dot in any odd-numbered quantum dot layer is greater than the absolute value of the valence band of the quantum dot in any even-numbered quantum dot layer.

[0010] In a second aspect, this application provides an electronic device, which includes a power supply component and an optoelectronic device as described in the first aspect, wherein the optoelectronic device is electrically connected to the power supply component.

[0011] This application provides an optoelectronic device and an electronic device, which have the following technical advantages:

[0012] In the optoelectronic device provided in this application, in the direction from the anode to the cathode, the active layer includes a first quantum dot layer to an Nth quantum dot layer stacked sequentially. For any two adjacent quantum dot layers, the absolute value of the valence band of the quantum dots in the odd-numbered quantum dot layer is greater than the absolute value of the valence band of the quantum dots in the even-numbered quantum dot layer. This increases the potential barrier for electron injection into the first quantum dot layer, and the even-numbered quantum dot layer can store excess electrons, thereby reducing the number of electrons injected into the first quantum dot layer. This keeps the electron injection level of the optoelectronic device within a suitable range, promotes a balance between the electron injection level and the hole injection level, and improves the device lifetime of the optoelectronic device. Attached Figure Description

[0013] The technical solution and other beneficial effects of this application will become apparent from the following detailed description of specific embodiments in conjunction with the accompanying drawings.

[0014] Figure 1 This is a schematic diagram of the structure of the first optoelectronic device provided in the embodiments of this application.

[0015] Figure 2 This is a schematic diagram of the structure of a second type of optoelectronic device provided in an embodiment of this application.

[0016] Figure 3 This is a schematic diagram of the structure of a third type of optoelectronic device provided in an embodiment of this application.

[0017] Figure 4 This is a schematic diagram of the structure of the fourth type of optoelectronic device provided in the embodiments of this application.

[0018] Figure 5 This is a schematic diagram of the structure of the fifth optoelectronic device provided in the embodiments of this application.

[0019] Figure 6 This is a schematic diagram of the structure of an optoelectronic device provided as a comparative example of this application. Detailed Implementation

[0020] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0021] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those familiar to those skilled in the art. Furthermore, any methods and materials similar to or equivalent to those described herein may be applied to this invention. The preferred embodiments and materials described herein are for illustrative purposes only and do not limit the scope of this application.

[0022] It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of embodiments. Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a rigid limitation on the scope of the invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is indicated herein, it means including any referenced number (fraction or integer) within the indicated range.

[0023] In the description of this application, the term "comprising" means "including but not limited to".

[0024] The term "at least one" refers to one or more items, while "multiple" or "multi-item" refers to two or more items. The terms "at least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c" or "at least one of a, b, and c" can be expressed as: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0025] The term "and / or" encompasses any one of two or more of the listed items, as well as any and all combinations of the listed items. These arbitrary and all combinations include any two listed items, any more listed items, or a combination of all listed items. For example, "A and / or B" includes three parallel solutions: A, B, and A+B. Similarly, the technical solution "A, and / or, B, and / or, C, and / or, D" includes any one of A, B, C, and D (i.e., all connected by "logical OR"), any and all combinations of A, B, C, and D, including combinations of any two or three of A, B, C, and D, and combinations of all four of A, B, C, and D (i.e., all connected by "logical AND").

[0026] In this application, descriptions such as "layer A is formed on one side of layer B," "layer A is formed on the side of layer B away from layer C," or similar expressions can mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, i.e., layer A and layer B are in direct contact; or they can mean that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, i.e., other spacer structures can be formed between layer A and layer B. Similarly, "layer A is disposed on one side of layer B" or "layer A is disposed on the side of layer B away from layer C" can mean that layer A and layer B are in direct contact, or that other spacer structures are provided between layer A and layer B; "layer A is disposed between layer B and layer C" can mean that layer A and layer B are in direct contact and layer A and layer C are in direct contact, or layer A and layer B are in direct contact and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and layer A and layer C are in direct contact.

[0027] The term "average particle size" refers to the area-average particle size of a particle swarm. Area-average particle size is calculated by dividing the total volume of the particle swarm by its total area, which is the reciprocal of the surface area per unit volume. If an imaginary swarm of particles with uniform size is used to replace the original swarm, and the total volume and area of ​​this imaginary swarm are identical to the original swarm, then the diameter of this imaginary swarm is the area-average particle size of the original swarm. Area-average particle size can be obtained through statistical analysis, using transmission electron microscopy to statistically analyze the particle size of each particle in the swarm.

[0028] In this application, the thickness of the thin film refers to the average thickness of the thin film, and the thickness of a certain functional layer refers to the average thickness of the functional layer. The thickness is obtained by measuring a step tester.

[0029] In describing the structural composition of core-shell quantum dots, this application arranges the layers in an order from the inside out, using Cd... 0.5 Zn 0.5 Se 0.7 S 0.3 / ZnSe / Cd 0.3 Zn 0.7 Taking S / ZnS as an example, Cd 0.5 Zn 0.5 Se 0.7 S 0.3 ZnSe represents the composition of the quantum dot's core, Cd represents the composition of the first shell, and ZnSe represents the composition of the first shell. 0.3 Zn 0.7 S represents the composition of the second shell, and ZnS represents the composition of the third shell.

[0030] In this application, "conduction band" refers to the conduction band bottom, and the conduction band is referenced to a vacuum energy level of 0.

[0031] In this application, "valence band" refers to the top of the valence band, and the valence band is referenced to a vacuum energy level of 0.

[0032] In this application, "gap" refers to the difference between the bottom of the price band and the top of the price band.

[0033] The applicant discovered that some optoelectronic devices exhibit an imbalance between electron and hole injection, negatively impacting device efficiency and lifetime. This imbalance is particularly pronounced in quantum dot light-emitting diodes (LEDs). Taking quantum dot LEDs as an example, the electron functional layer is typically made of inorganic compounds (e.g., ZnO nanoparticles) with high electron mobility, while the hole functional layer is generally made of organic compounds. This results in a significantly higher electron injection efficiency than hole injection efficiency, i.e., a carrier injection imbalance. Excessive electrons can deactivate quantum dots and damage the hole functional material, negatively affecting device efficiency and performance stability. Furthermore, existing green and red quantum dot LEDs suffer from a much higher electron injection level than hole injection level. To further improve the device efficiency and lifetime of green and red quantum dot LEDs, the electron injection level should be controlled within a suitable range to prevent it from becoming excessively high.

[0034] Based on this, embodiments of this application provide an optoelectronic device that can improve the problem of carrier injection imbalance caused by excessive electron injection, such as... Figures 1 to 5As shown, the optoelectronic device 10 includes an anode 101 and a cathode 102 disposed opposite to each other, and an active layer 103 disposed between the anode 101 and the cathode 102. In the direction from the anode 101 to the cathode 102, the active layer 103 includes a first quantum dot layer to an Nth quantum dot layer stacked sequentially, where N is a positive integer greater than or equal to 2. In the first quantum dot layer to the Nth quantum dot layer, the absolute value of the valence band of the quantum dot in any odd-numbered quantum dot layer is greater than the absolute value of the valence band of the quantum dot in any even-numbered quantum dot layer.

[0035] In the optoelectronic device 10 of this application embodiment, by setting the active layer 103 as a multilayer structure, and the absolute value of the valence band of the quantum dots in any quantum dot layer in the odd-numbered layers being greater than the absolute value of the valence band of the quantum dots in any quantum dot layer in the even-numbered layers, the potential barrier for electron injection into the first quantum dot layer can be increased, and the quantum dot layers in the even-numbered layers can store excess electrons, thereby reducing the number of electrons injected into the first quantum dot layer. This keeps the electron injection level of the optoelectronic device 10 within a suitable range, promotes the balance between the electron injection level and the hole injection level, and improves the device lifetime of the optoelectronic device 10. In addition, it can improve the phenomenon of quantum dot charging in the first quantum dot layer, reduce the Auger recombination probability, increase the radiative recombination probability, and improve the device efficiency of the optoelectronic device 10.

[0036] Taking N=4 as an example, the quantum dot layers in odd-numbered layers are the first and third quantum dot layers, and the quantum dot layers in even-numbered layers are the second and fourth quantum dot layers. The absolute values ​​of the valence bands of quantum dots in the first quantum dot layer are greater than the absolute values ​​of the valence bands of quantum dots in the second and fourth quantum dot layers, and the absolute values ​​of the valence bands of quantum dots in the third quantum dot layer are greater than the absolute values ​​of the valence bands of quantum dots in the second and fourth quantum dot layers, respectively.

[0037] In some embodiments of this application, for any two adjacent quantum dot layers, the difference between the absolute value of the valence band of the quantum dots in the odd-numbered quantum dot layer and the absolute value of the valence band of the quantum dots in the even-numbered quantum dot layer is 0.1 eV to 0.5 eV, for example, it can be 0.1 eV, 0.2 eV, 0.3 eV, 0.4 eV, 0.5 eV or any two of the aforementioned values, which can make the electron injection level of the optoelectronic device 10 more suitable.

[0038] In some embodiments of this application, in any two quantum dot layers from the first quantum dot layer to the Nth quantum dot layer, the absolute value of the difference in band gap between quantum dots is 0 eV to 0.3 eV, for example, 0 eV, 0.1 eV, 0.2 eV, 0.3 eV, or any two of the aforementioned values, which can further improve the performance stability of the active layer 103. For example, when the optoelectronic device 10 is a light-emitting device, the purity of the emission peak of the active layer 103 can be further improved, thereby further improving the purity of the emission color of the optoelectronic device 10.

[0039] In some embodiments of this application, in the first to the Nth quantum dot layers, the absolute value of the difference between the conduction bands of quantum dots in any two even-numbered quantum dot layers is 0 eV to 0.3 eV, for example, 0 eV, 0.1 eV, 0.2 eV, 0.3 eV, or any value between any two of the aforementioned values. This makes it easier to control the energy levels of the active layer 103 and is beneficial to further improving the performance stability of the active layer 103. It is understood that when the band gaps of quantum dots in any two even-numbered quantum dot layers are the same, the valence bands of quantum dots in any two even-numbered quantum dot layers are also the same.

[0040] In some embodiments of this application, N is a positive integer not greater than 10, such as 2, 3, 4, 5, 6, 7, 8, 9 or 10, which enables the thickness of the active layer 103 to be within a more suitable range, the electron injection level of the optoelectronic device 10 to be within a suitable range, and further improves the phenomenon of quantum dot charging in the first quantum dot layer.

[0041] In some embodiments of this application, the thickness of the active layer 103 is 20nm to 100nm, for example, it can be 20nm, 40nm, 60nm, 80nm, 100nm or any two of the aforementioned values; in the first quantum dot layer to the Nth quantum dot layer, the thickness of each quantum dot layer is 10nm to 30nm, for example, it can be 10nm, 20nm, 30nm or any two of the aforementioned values.

[0042] In order to ensure that the energy levels of the first quantum dot layer to the Nth quantum dot layer are staggered in the direction from the anode 101 to the cathode 102, thereby further increasing the potential barrier for electron injection into the first quantum dot layer and further reducing the potential barrier for electron injection into the first quantum dot layer, in some embodiments of this application, N is a positive integer greater than or equal to 3. For any two adjacent quantum dot layers, the absolute value of the conduction band of the quantum dots in the odd-numbered quantum dot layer is greater than the absolute value of the conduction band of the quantum dots in the even-numbered quantum dot layer, and any one of the following conditions is satisfied:

[0043] (1) In the direction from the anode to the cathode, the absolute value of the difference between the conduction bands of any two quantum dots in an odd-numbered quantum dot layer is 0 eV to 0.3 eV;

[0044] (2) In the direction from the anode to the cathode, the absolute value of the conduction band of the quantum dots in the odd-numbered quantum dot layers gradually increases;

[0045] (3) In the direction from the anode to the cathode, the absolute value of the conduction band of the quantum dots in the odd-numbered quantum dot layers gradually decreases.

[0046] It should be noted that in (2) and (3) above, the active layer 103 can be encouraged to store excess electrons, thereby further improving the phenomenon of excess electrons leaking to the hole side. For (2), the even-numbered quantum dot layers can be encouraged to store excess electrons, further improving the phenomenon of quantum dots being charged near the hole side, thereby further reducing the Auger recombination probability, further increasing the radiative recombination probability, and further improving the optoelectronic performance and device lifetime of the optoelectronic device 10.

[0047] In some embodiments of this application, the absolute value of the difference between the conduction bands of any two adjacent quantum dots in an odd-numbered quantum dot layer is 0.1 eV to 0.3 eV, for example, it can be 0.1 eV, 0.2 eV, 0.3 eV or any two of the aforementioned values, so that the number of electrons injected into the first quantum dot layer is within a more suitable range, thereby further improving the device lifetime and device efficiency of the optoelectronic device 10.

[0048] To further improve the matching degree between the electron injection level and the hole injection level of the optoelectronic device 10, thereby further improving the optoelectronic performance and performance stability of the optoelectronic device 10, in some embodiments of this application, N is a positive integer greater than or equal to 3. In the first quantum dot layer to the Nth quantum dot layer, the absolute value of the difference in band gap between quantum dots in any two quantum dot layers is 0 eV to 0.1 eV; in the first quantum dot layer to the Nth quantum dot layer, the absolute value of the difference in conduction band between quantum dots in any two even-numbered quantum dot layers is 0 eV to 0.3 eV; in the direction from the anode 101 to the cathode 102, the absolute value of the conduction band of quantum dots in odd-numbered quantum dot layers gradually increases, which can further reduce the probability of electron leakage to the hole side and further improve the exciton recombination efficiency.

[0049] In some embodiments of this application, N is, for example, 3, 4 or 5. On the one hand, this is more conducive to the active layer 103 storing excess electrons, thereby further improving the phenomenon of quantum dot charging near the hole side. On the other hand, it enables the carrier mobility of the optoelectronic device 10 to be in a more suitable range, further promoting the electron-hole transport balance.

[0050] In some embodiments of this application, the optoelectronic device 10 is a light-emitting device, and the active layer 103 is a light-emitting layer. In the first quantum dot layer to the Nth quantum dot layer, the intrinsic emission peak of the quantum dots in each quantum dot layer under the excitation of light with a wavelength of 250nm to 450nm is independently 496nm to 580nm. The band gap of the quantum dots in each quantum dot layer is independently 2.14eV to 2.5eV, for example, it can be 2.14eV, 2.2eV, 2.3eV, 2.4eV, 2.5eV or any two of the aforementioned values. The valence band of the quantum dots in each quantum dot layer is independently -6.1eV to -5.9eV, for example, it can be -6.1eV, -6.0eV, -5.9eV or any two of the aforementioned values. The peak width of the quantum dots in each quantum dot layer is, for example, 12nm to 30nm.

[0051] In some other embodiments of this application, the optoelectronic device 10 is a light-emitting device, and the active layer 103 is a light-emitting layer. In the first quantum dot layer to the Nth quantum dot layer, the intrinsic emission peaks of the quantum dots in each quantum dot layer under the excitation of light with wavelengths of 250 nm to 450 nm are 590 nm to 720 nm, respectively. The band gaps of the quantum dots in each quantum dot layer are independently 1.72 eV to 2.1 eV, for example, they can be 1.72 eV, 1.8 eV, 1.9 eV, 2.0 eV, 2.1 eV or any two of the aforementioned values. The valence bands of the quantum dots in each quantum dot layer are independently -6.0 eV to -5.8 eV, for example, they can be -6.0 eV, -5.9 eV, -5.8 eV or any two of the aforementioned values. The peak width of the quantum dots in each quantum dot layer is, for example, 12 nm to 30 nm.

[0052] In some embodiments of this application, in the first to the Nth quantum dot layers, the quantum dots in each quantum dot layer are independently selected from one or more of single-component quantum dots, core-shell quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, and the shell of the core-shell quantum dots can be one or more. The average particle size of the quantum dots in each quantum dot layer can be, for example, 2 nm to 30 nm, with examples being 2 nm, 5 nm, 8 nm, 10 nm, 20 nm, 30 nm, or any two of the aforementioned values.

[0053] For single-component quantum dots and core-shell quantum dots, the material of the single-component quantum dot, the material of the core of the core-shell quantum dot, or the material of the shell of the core-shell quantum dot includes, but is not limited to, at least one of group II-VI compounds, group III-V compounds, group III-VI compounds, group IV-VI compounds, or group I-III-VI compounds. Among them, the II-VI group compounds include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. III-VI group compounds include, but are not limited to, one or more of In2S3, In2Se3, InGaS3, and InGaSe3. III-V group compounds include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. Group IV-VI compounds include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. Group I-III-VI compounds include, but are not limited to, one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2.

[0054] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. It should be noted that in the core-shell structured quantum dots, " / " represents a shell. Taking CdSe / CdSeS / CdS as an example, CdSe is the quantum dot core, CdSeS is the first shell, and CdS is the second shell.

[0055] For inorganic perovskite quantum dots, the general structural formula is QJT3, where Q is Cs. + J is a divalent metal cation, and each occurrence of J is independently selected from Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ T is a halide anion, and each time T appears, it is independently selected from Cl. - ,Br - or I - .

[0056] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is LJT3, where L is a formamidinyl group, and the range of choices for J and T is as described above.

[0057] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is GJT3, where G is selected from organic amine cations, including but not limited to CH3(CH2). n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+(n≥2), the selection range of J and T is described above. When n=2, the inorganic metal halide octahedrons JT64- are connected by a common vertex, the metal cation J is located at the body center of the halogen octahedron, and the organic amine cation G fills the gaps between the octahedrons, forming an infinitely extended three-dimensional structure; when n>2, the inorganic metal halide octahedrons JT64- connected by a common vertex extend in the two-dimensional direction to form a layered structure, with organic amine cation bilayers (protonated monoamines) or organic amine cation monolayers (protonated diamines) inserted between the layers, and the organic and inorganic layers overlap to form a stable two-dimensional layered structure.

[0058] In some embodiments of this application, the quantum dots are selected from single-component quantum dots or core-shell structured quantum dots. The materials of the single-component quantum dots, the core materials of the core-shell structured quantum dots, and the shell materials of the core-shell structured quantum dots are independently selected from one or more of CdS, CdSe, ZnS, ZnSe, CdSeS, ZnSeS, CdZnS, CdZnSe, CdZnSeS, ZnTe, CdSeTe, CdSTe, ZnSeTe, ZnSTe, CdZnTe, CdZnSeTe, and CdZnSTe, which are easy to prepare and have high external quantum efficiency.

[0059] It can be understood that the surface of each quantum dot in the quantum dot layer can also be connected to ligands, which can be ligands commonly used in the field, including but not limited to C1 to C2. 30 aliphatic carboxylic acid ligands, C6-C 30 Aromatic carboxylic acid ligands, C1-C 30 Aliphatic thiol ligands, C6-C 30 Thiol aromatic ligands, C1-C 30 fatty amine ligands, C6-C 30 Aromatic amine ligands, C1-C 30 Aliphatic phosphine ligands, C6~C 30 Aromatic phosphine ligands and C6-C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0060] Among them, C1~C 30 The aliphatic carboxylic acid ligands include, but are not limited to, one or more of the following: octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, teicosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; C6~C 30 Aromatic carboxylic acid ligands include, but are not limited to, one or more of benzoic acid, biphenylic acid, and 1-naphthoic acid. (C1-C2) 30The aliphatic thiol ligands include, but are not limited to, one or more of hexamethylenetetramine, octanethiol, nonanethiol, decanethiol, undecylthiol, dodecathiol, hexadecylthiol, and octadecylthiol, C6–C6. 30 Thiol aromatic ligands include, but are not limited to, one or more of benzenethiol, triphenylmethanethiol, and p-terphenyl-4,4”-dithiol. C1~C 30 The aliphatic amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, trideamine, tetradeamine, pentadecylamine, hexadecylamine, heptadecanamine, octadecylamine, and oleylamine, C6-C6. 30 The aromatic amine ligands include, but are not limited to, one or more of aniline, indenepropylamine, 4-octylaniline, and benzidine. (C1-C2) 30 The aliphatic phosphine ligands include, but are not limited to, one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, and tridecylphosphine oxide, C6–C6. 30 Aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphineethyl)phenylphosphine and triphenylphosphine oxide, C6-C6. 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and ethyl diphenyl phosphate. Halogen ligands include, but are not limited to, -Cl, -F, -I, or -Br.

[0061] In some embodiments of this application, see further reference. Figures 1 to 5 The optoelectronic device 10 also includes an electronic functional layer 104 disposed between the cathode 102 and the active layer 103. The electronic functional layer 104 can be a single-layer structure or a multi-layer structure, and the thickness of the electronic functional layer 104 is, for example, 10 nm to 300 nm.

[0062] When the electronic functional layer 104 is a multilayer structure, the electronic functional layer 104 includes, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the electronic functional layer 104 including an electron injection layer, an electron transport layer, and a hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the hole blocking layer is closer to the anode 101 than the electron injection layer. For the electronic functional layer 104 including an electron transport layer and a hole blocking layer, the hole blocking layer is closer to the anode 101 than the electron transport layer. For the electronic functional layer 104 including an electron injection layer and an electron transport layer, the electron transport layer is closer to the anode 101 than the electron injection layer.

[0063] In some embodiments of this application, the electronic functional layer 104 is made of a first inorganic material and a second inorganic material. The first inorganic material includes one or more of an undoped second metal oxide and a group IIB-VIA semiconductor material. The undoped second metal oxide is selected from one or more of ZnO, TiO2, and SnO2, and the group IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe, CdS, CdSe, ZnTe, and CdTe. The second inorganic material includes one or more doped first compounds, the general formula of which is A. (1-x) M x O, where x is independently greater than 0 and not greater than 0.5 each time it appears, A and M are different, and A and M are independently selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ga, Li, Ga, In and Y.

[0064] In some embodiments of this application, the doped first compound is selected from Zn. (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, wherein x is independently greater than 0 and not greater than 0.2 each time it appears.

[0065] In some embodiments of this application, see further reference. Figures 1 to 5 The optoelectronic device 10 also includes a hole functional layer 105 disposed between the anode 101 and the active layer 103. The hole functional layer 105 can be a single-layer structure or a multi-layer structure, and the thickness of the hole functional layer 105 is, for example, 10 nm to 300 nm.

[0066] When the hole functional layer 105 is a multilayer structure, the hole functional layer 105 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For a hole functional layer 105 including a hole injection layer, a hole transport layer, and an electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode 101 than the electron blocking layer. For a hole functional layer 105 including a hole transport layer and an electron blocking layer, the hole transport layer is closer to the anode 101 than the electron blocking layer. For a hole functional layer 105 including a hole injection layer and a hole transport layer, the hole injection layer is closer to the anode 101 than the hole transport layer.

[0067] In some embodiments of this application, the material of the hole functional layer 105 includes one or more of organic materials, a third inorganic material, and a fourth inorganic material. The organic materials include, but are not limited to, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium phthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (CAS No. 105598-27-4), polyaniline (CAS No. 25233-30-1), and polypyrrole (…). CAS No. 30604-81-0), 3-hexyl-substituted polythiophene (CAS No. 104934-50-1), poly(9-vinylcarbazole) (abbreviated as PVK, CAS No. 25067-59-8), 4,4'-bis(9-carbazole)biphenyl (abbreviated as CBP, CAS No. 58328-31-7), poly[bis(4-phenyl)(4-butylphenyl)amine] (abbreviated as Poly-TPD, CAS No. 472960-35-3), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (abbreviated as TAPC, CAS No. 58473-78-2), poly[(9,9-dioctylfluorenyl-2,7-diyl) -Co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (abbreviated as TFB, CAS No. 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)] (CAS No. 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), 4,4',4”-tris(carbazole-9-yl)triphenylamine (abbreviated as TCTA, CAS No. 139092-78-7), 4,4',4'-tris(2-naphthalene) N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB, CAS No. 123847-85-8), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-Diamine (Spiro-TPD, CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTTA, CAS No. 1333317-99-9), 2,2',7,7'-tetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-omeTAD, CAS No. 207739-72-8), N,N,N',N'-tetraarylbenzidine One or more of the following: (CAS No. 15546-43-7), 4,4',4”-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), N,N'-diphenyl-N,N'-di-[4-(N,N-diphenylamino)phenyl]benzidine (CAS No. 167218-46-4), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (CAS No. 138184-36-8), and poly[2-methoxy-5-[(3,7-dimethyloctyloxy)-1,4-phenyl]-1,2-vinyldiyl] (CAS No. 177716-59-5).

[0068] The third inorganic material includes, for example, one or more of graphene, fullerene, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide. The fourth inorganic material includes, for example, one or more doped second compounds, the host compound of which includes graphene, fullerene, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, or tungsten sulfide. The doping element of the doped second compound is selected from one or more of boron, nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metals, and the molar amount of the doping element accounts for no more than 50% of the total molar amount of the doped second compound.

[0069] In some embodiments of this application, see further reference. Figures 1 to 5The optoelectronic device 10 includes a hole functional layer 105, an active layer 103, and an electronic functional layer 104 stacked sequentially. The hole functional layer 105 is closer to the anode 101 than the electronic functional layer 104. The hole functional layer 105 includes a hole injection layer 1051 and a hole transport layer 1052 stacked sequentially. The hole injection layer 1051 is closer to the anode 101 than the hole transport layer 1052. In the first quantum dot layer to the Nth quantum dot layer, the absolute value of the valence band of the quantum dot in each quantum dot layer is greater than the absolute value of the HOMO energy level or valence band of the hole transport layer 1052. This further improves the performance of the active layer 103 in storing excess electrons, further reduces the probability of excess electrons leaking to the hole functional layer 105, thereby further improving the performance stability of the hole functional layer 105, and further reducing the probability of the quantum dot near the hole transport layer 1052 becoming charged, further reducing the Auger recombination probability, thereby further improving the radiative recombination probability.

[0070] In some embodiments of this application, the HOMO level or valence band of the hole transport layer 1052 material is -6.0 eV to -5.3 eV, for example, it can be -6.0 eV, -5.8 eV, -5.5 eV, -5.3 eV, or any two of the aforementioned values. The material of the hole transport layer 1052 includes, for example, poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[bis(4-phenyl)(4-butylphenyl)amine], poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(9-vinylcarbazole), polytriphenylamine, 4,4',4”-tris(carbazole-9-yl)triphenylamine, 2,2',7,7'-tetra[N,N-di(4-methoxyphenyl)] One or more of the following compounds are selected: [N,N-bis(4-methylphenyl)aniline], [N,N′-bis(1-nayl)-N,N′-diphenyl-1,1′-diphenyl-4,4′-diamine], and [4,4′-bis(N-carbazole)-1,1′-biphenyl], which have suitable HOMO and LUMO energy levels, and can further reduce the hole injection barrier, thereby further improving the hole injection level of optoelectronic device 10.

[0071] In some embodiments of this application, the materials of the anode 101 and the cathode 102 are independently selected from one or more of metals, carbon materials, second metal oxides, metal fluorides, metal carbonates, and metal sulfides. The metals include, but are not limited to, one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg. The carbon materials include, but are not limited to, one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The second metal oxides include, but are not limited to, one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), TiO2, SnO2, ZnO, and In2O3. The metal fluorides include, but are not limited to, one or more of LiF, BaF2, and CsF. The metal carbonates include, but are not limited to, CaCO3. The metal sulfides include, but are not limited to, ZnS.

[0072] The anode 101 and the cathode 102 can also be composite electrodes. The composite electrode can be a double-layer structure or have a "sandwich"-like structure. The material of each layer in the composite electrode is independently selected from one or more of the following: metal, carbon material, second metal oxide, metal fluoride, metal carbonate and metal sulfide. The composite electrode with a bilayer structure includes, but is not limited to, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, or CaCO3 / Al. ​​Composite electrodes with a sandwich-like structure include, but are not limited to, one or more of BaF2 / Ca / Al, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. The thickness of the intermediate layer does not exceed 35 nm. The thickness of the anode 101 can be, for example, 20 nm to 200 nm, and the thickness of the cathode 102 can be, for example, 20 nm to 200 nm.

[0073] It is understood that the optoelectronic device 10 may also include a substrate, which is disposed on the side of the anode 101 away from the multiple functional layers or on the side of the cathode 102 away from the multiple functional layers. The substrate may be a rigid substrate or a flexible substrate. The material of the rigid substrate includes, but is not limited to, one or more of glass, ceramic and silicon wafer. The material of the flexible substrate includes, but is not limited to, one or more of polyimide, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate and polyethersulfone.

[0074] This application also provides a method for fabricating an optoelectronic device, which can be used to fabricate the aforementioned optoelectronic device. The method for fabricating the optoelectronic device includes the following steps:

[0075] S100, Provide a first electrode, and form an active layer on one side of the first electrode;

[0076] S200, A second electrode is formed on the side of the active layer away from the first electrode.

[0077] Wherein, when the first electrode is the anode and the second electrode is the cathode, the step of forming an active layer on one side of the first electrode includes: sequentially forming a first quantum dot layer to an Nth quantum dot layer on one side of the first electrode. Alternatively, when the first electrode is the cathode and the second electrode is the anode, the step of forming an active layer on one side of the first electrode includes: sequentially forming an Nth quantum dot layer to a first quantum dot layer on one side of the first electrode. The structural composition of the anode, cathode, and active layer are all as described above.

[0078] The methods for forming each quantum dot layer in the anode, cathode, and active layer include, but are not limited to, chemical and / or physical methods. Chemical methods include, but are not limited to, one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include, but are not limited to, physical deposition and solution methods. Physical deposition methods include, but are not limited to, one or more of thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. Solution methods include, but are not limited to, one or more of spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spray coating, roller coating, casting, slot coating, and strip coating.

[0079] In some embodiments of this application, each quantum dot layer is prepared using a solution method, including steps such as: depositing a quantum dot solution using a solution method, and drying the deposited quantum dot solution to form a quantum dot layer. The drying method includes, but is not limited to, one or more of heat treatment, vacuum drying, and photocuring. It should be noted that when preparing another quantum dot layer on top of one quantum dot layer, to mitigate the phenomenon of solvent erosion of the underlying quantum dot layer during the formation of the other quantum dot layer, the first quantum dot layer can be subjected to ultraviolet curing treatment with an irradiation intensity of 300 mJ / cm² before preparing the second quantum dot layer. 2 ~700mJ / cm 2 The irradiation time is 1 min to 120 min.

[0080] In some embodiments of this application, the method for fabricating the optoelectronic device further includes the steps of: forming a hole functional layer between the anode and the active layer, and / or forming an electron functional layer between the cathode and the active layer. The structural composition of the hole functional layer and the electron functional layer are respectively described above, and the methods for fabricating the hole functional layer and the electron functional layer include, but are not limited to, the aforementioned chemical and / or physical methods.

[0081] In some embodiments of this application, when the first electrode is an anode and the second electrode is a cathode, the method for fabricating the optoelectronic device includes the steps of: sequentially forming a hole functional layer, an active layer, and an electronic functional layer on one side of the first electrode; and forming the second electrode on the side of the electronic functional layer away from the active layer.

[0082] In some other embodiments of this application, when the first electrode is a cathode and the second electrode is an anode, the method for fabricating the optoelectronic device includes the steps of: sequentially forming an electronic functional layer, an active layer, and a hole functional layer on one side of the first electrode; and forming the second electrode on the side of the hole functional layer away from the active layer.

[0083] After the various functional layers of the optoelectronic device are fabricated, an encapsulation process is required. Encapsulation can be performed using conventional machine encapsulation or manual encapsulation. In the encapsulation environment, both oxygen and water content must be below 0.1 ppm to ensure the stability of the optoelectronic device. Specifically, the encapsulation material used to form the encapsulation layer is selected from one or more of ultraviolet adhesive, metal thin film, and glass adhesive. As an example, the encapsulation material is acrylic resin or epoxy resin.

[0084] In order to accelerate the forward aging of the optoelectronic device 10, in some embodiments of this application, after the packaging process, the prepared optoelectronic device is heat-treated at 60°C to 150°C for 1 min to 48 h, which is beneficial to further improve the optoelectronic performance and performance stability of the optoelectronic device 10.

[0085] This application also provides an electronic device, which includes a power supply component and an optoelectronic device as described above, or an optoelectronic device prepared by any of the methods described above, wherein the optoelectronic device and the power supply component are electrically connected.

[0086] The electronic device includes, for example, a display panel comprising an array of pixel units, each pixel unit independently comprising an optoelectronic device as described above, or an optoelectronic device fabricated using any of the methods described above. The electronic device can be any electronic product with a display function, including but not limited to smartphones, tablet computers, mobile phones, video phones, e-book readers, laptop PCs, netbook computers, workstations, servers, personal digital assistants, portable multimedia players, MP3 players, mobile medical devices, cameras, game consoles, digital cameras, car navigation systems, electronic billboards, ATMs, smart bracelets, smartwatches, virtual reality (VR) devices, or wearable devices.

[0087] The technical solutions and effects of this application will be described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of this application and are not intended to limit this application.

[0088] Example 1

[0089] This embodiment provides an optoelectronic device and its fabrication method. The optoelectronic device is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 1 As shown, in the direction from bottom to top, the optoelectronic device 10 includes an anode 101, a hole functional layer 105, an active layer 103, an electronic functional layer 104 and a cathode 102 stacked sequentially. The hole functional layer 105 is composed of a hole injection layer 1051 and a hole transport layer 1052 stacked sequentially. The hole injection layer 1051 is closer to the anode 101 than the hole transport layer 1052.

[0090] In the optoelectronic device 10, the anode 101 is made of ITO and has a thickness of 120 nm. The cathode 102 is made of Ag and has a thickness of 120 nm. The electronic functional layer 104 is made of Zn. 0.85 Mg 0.15The electron functional layer 104 consists of O nanoparticles (average particle size of 5 nm) and has a thickness of 50 nm. The hole injection layer 1051 is made of PEDOT:PSS and has a thickness of 130 nm. The hole transport layer 1052 is made of TFB and has a thickness of 100 nm.

[0091] In the direction from the anode 101 to the cathode 102, the active layer 103 includes a first quantum dot layer 1031, a second quantum dot layer 1032, and a third quantum dot layer 1033 stacked sequentially. The first quantum dot layer 1031 is made of first quantum dots, specifically Cd. 0.5 Zn 0.5 Se 0.7 S 0.3 / ZnSe / Cd 0.3 Zn 0.7 The first quantum dot layer 1031 of S / ZnS has a thickness of 10 nm; the second quantum dot layer 1032 is made of a second quantum dot, which is Cd. 0.5 Zn 0.5 Se / ZnSe / Cd 0.3 Zn 0.7 The second quantum dot layer 1032 is 10 nm thick (S / ZnS); the third quantum dot layer 1033 is made of Cd quantum dots. 0.5 Zn 0.5 Se 0.5 S 0.5 / ZnSe / Cd 0.3 Zn 0.7 The thickness of the S / ZnS, third quantum dot layer 1033 is 10 nm. The performance parameters of the first, second, and third quantum dots are shown in Table 1 below.

[0092] Table 1

[0093]

[0094] Note: The emission wavelength refers to the peak value of the intrinsic emission peak of the quantum dot when excited by light with a wavelength of 350 nm.

[0095] The fabrication method of the light-emitting device in this embodiment includes the following steps:

[0096] S10.1 Provide a substrate (material is glass and thickness is 1mm), sputter ITO on one side of the substrate to obtain an ITO layer, use a cotton swab dipped in a small amount of soapy water to wipe the surface of the ITO layer to remove visible impurities, and then sequentially ultrasonically clean the substrate including ITO with deionized water for 15min, ultrasonically clean with acetone for 15min, ultrasonically clean with anhydrous ethanol for 15min and ultrasonically clean with deionized water for 15min, dry it and then perform ultraviolet-ozone surface treatment for 15min to obtain a substrate including an anode.

[0097] S10.2 Under normal temperature and pressure air environment, spin-coat PEDOT:PSS aqueous solution on the side of the anode away from the substrate, and then place it at 150℃ for constant temperature heat treatment for 30 min to obtain hole injection layer.

[0098] S10.3 Under a nitrogen atmosphere at normal temperature and pressure, spin-coat a TFB solution on the side of the hole injection layer away from the anode. The concentration of TFB in the TFB solution is 7.5 mg / mL and the solvent of the TFB solution is chlorobenzene. Then, heat-treat at 150°C for 30 min under a nitrogen atmosphere to obtain the hole transport layer.

[0099] S10.4. Under a nitrogen atmosphere at room temperature and pressure, spin-coat the first quantum dot solution on the side of the hole transport layer away from the hole injection layer. The concentration of the first quantum dot solution in the first quantum dot solution is 10 mg / mL, and the solvent is n-octane. Then, heat-treat at 100°C for 10 min under a nitrogen atmosphere, followed by UV curing in a UV oven with a wavelength of 365 nm and an irradiation intensity of 600 mJ / cm². 2 The irradiation time was 30 minutes, and the first quantum dot layer was obtained;

[0100] S10.5. Under a nitrogen atmosphere at room temperature and pressure, spin-coat a second quantum dot solution on the side of the first quantum dot layer away from the hole transport layer. The concentration of the second quantum dot solution in the second quantum dot solution is 10 mg / mL, and the solvent for the second quantum dot solution is n-octane. Then, heat-treat at 100°C for 10 min under a nitrogen atmosphere, followed by UV curing in a UV oven with a wavelength of 365 nm and an irradiation intensity of 600 mJ / cm². 2 The irradiation time was 30 minutes to obtain the second quantum dot layer;

[0101] S10.6 Under a nitrogen atmosphere at room temperature and pressure, spin-coat a third quantum dot solution on the side of the second quantum dot layer away from the first quantum dot layer. The concentration of the third quantum dot in the solution is 10 mg / mL, and the solvent is n-octane. Then, heat-treat at 100°C for 10 min under a nitrogen atmosphere, followed by UV curing in an ultraviolet oven with a wavelength of 365 nm and an irradiation intensity of 600 mJ / cm². 2 The irradiation time was 30 minutes, and the third quantum dot layer was obtained;

[0102] S10.7 Under a nitrogen atmosphere at room temperature and pressure, spin-coat nano-Zn onto the side of the third quantum dot layer furthest from the second quantum dot layer. 0.85 Mg 0.15 O solution, nano Zn 0.85 Mg 0.15 Zn in O solution 0.85 Mg 0.15 The concentration of O nanoparticles is 30 mg / mL, and the concentration of nano-Zn is... 0.85 Mg 0.15 The solvent for the O solution was ethanol, and then it was subjected to constant temperature heat treatment at 80°C for 30 min under a nitrogen atmosphere to obtain the electronic functional layer.

[0103] S10.8. Place the laminated structure obtained after completing step S1.7 in a vacuum with a vacuum level not exceeding 3 × 10⁻⁶. -4 In the vapor deposition chamber of Pa, Ag is thermally vaporized on the side of the electronic functional layer away from the third quantum dot layer through a mask to obtain the cathode. Then, it is encapsulated with acrylic resin and subjected to constant temperature heat treatment at 120°C for 30 minutes to obtain the optoelectronic device.

[0104] Example 2

[0105] This embodiment provides an optoelectronic device. Compared to the optoelectronic device in Embodiment 1, the difference between the optoelectronic device in this embodiment and the one in the following aspects is: Figure 2 As shown, in the direction from the anode 101 to the cathode 102, the active layer 103 includes a first quantum dot layer 1031, a second quantum dot layer 1032, a third quantum dot layer 1033, and a fourth quantum dot layer 1034 stacked sequentially. The first quantum dot layer 1031 is made of the first quantum dot from Example 1, and its thickness is 10 nm. The second quantum dot layer 1032 is made of the second quantum dot from Example 1, and its thickness is 10 nm. The third quantum dot layer 1033 is made of the third quantum dot from Example 1, and its thickness is 10 nm. The fourth quantum dot layer 1034 is made of the second quantum dot from Example 1, and its thickness is 10 nm.

[0106] The method for preparing the optoelectronic device in this embodiment can be referred to the method for preparing the optoelectronic device in Example 1.

[0107] Example 3

[0108] This embodiment provides an optoelectronic device. Compared to the optoelectronic device in Embodiment 1, the difference in this embodiment is that the first quantum dot is replaced with Cd. 0.5 Zn 0.5 Se 0.8 S 0.2 / ZnSe / Cd 0.5 Zn 0.5 The S / ZnS has an average particle size of 10.2 nm, an emission wavelength of 633 nm, a peak width of 28 nm, a valence band of -6.2 eV, and a band gap of 1.97 eV; the thickness of the first quantum dot layer 1031 is 10.2 nm.

[0109] The method for preparing the optoelectronic device in this embodiment can be referred to the method for preparing the optoelectronic device in Example 1.

[0110] Example 4

[0111] This embodiment provides an optoelectronic device. Compared to the optoelectronic device in Embodiment 1, the difference in this embodiment is that the second quantum dot is replaced with Cd. 0.5 Zn 0.5 Se 0.9 S 0.1 / ZnSe / Cd 0.3 Zn 0.7 The S / ZnS has an average particle size of 10 nm, an emission wavelength of 630 nm, a peak width of 26 nm, a valence band of -6.15 eV, and a band gap of 1.97 eV; the second quantum dot layer 1031 has a thickness of 10 nm.

[0112] The method for preparing the optoelectronic device in this embodiment can be referred to the method for preparing the optoelectronic device in Example 1.

[0113] Example 5

[0114] This embodiment provides an optoelectronic device. Compared to the optoelectronic device in Embodiment 1, the difference between the optoelectronic device in this embodiment and the one in the following aspects is: Figure 2As shown, in the direction from the anode 101 to the cathode 102, the active layer 103 includes a first quantum dot layer 1031, a second quantum dot layer 1032, a third quantum dot layer 1033, and a fourth quantum dot layer 1034 stacked sequentially. The material of the first quantum dot layer 1031 includes the first quantum dot in Example 1, and the thickness of the first quantum dot layer 1031 is 10 nm. The material of the second quantum dot layer 1032 includes the second quantum dot in Example 4, and the thickness of the second quantum dot layer 1032 is 10 nm. The material of the third quantum dot layer 1033 includes the third quantum dot in Example 1, and the thickness of the third quantum dot layer 1032 is 10 nm. The material of the fourth quantum dot layer 1034 includes the second quantum dot in Example 4, and the thickness of the fourth quantum dot layer 1034 is 10 nm.

[0115] The method for preparing the optoelectronic device in this embodiment can be referred to the method for preparing the optoelectronic device in Example 1.

[0116] Example 6

[0117] This embodiment provides an optoelectronic device. Compared to the optoelectronic device in Embodiment 1, the difference between the optoelectronic device in this embodiment and the one in the following aspects is: Figure 2 As shown, in the direction from the anode 101 to the cathode 102, the active layer 103 includes a first quantum dot layer 1031, a second quantum dot layer 1032, a third quantum dot layer 1033, and a fourth quantum dot layer 1034 stacked sequentially. The material of the first quantum dot layer 1031 includes the first quantum dot in Example 1, and the thickness of the first quantum dot layer 1031 is 10 nm. The material of the second quantum dot layer 1032 includes the second quantum dot in Example 1, and the thickness of the second quantum dot layer 1032 is 10 nm. The material of the third quantum dot layer 1033 includes the first quantum dot in Example 1, and the thickness of the third quantum dot layer 1032 is 10 nm. The material of the fourth quantum dot layer 1034 includes the second quantum dot in Example 1, and the thickness of the fourth quantum dot layer 1034 is 10 nm.

[0118] The method for preparing the optoelectronic device in this embodiment can be referred to the method for preparing the optoelectronic device in Example 1.

[0119] Example 7

[0120] This embodiment provides an optoelectronic device. Compared to the optoelectronic device in Embodiment 1, the difference between the optoelectronic device in this embodiment and the one in the following aspects is: Figure 3 As shown, the third quantum dot layer is omitted.

[0121] The method for preparing the optoelectronic device in this embodiment can be referred to the method for preparing the optoelectronic device in Example 1.

[0122] Example 8

[0123] This embodiment provides an optoelectronic device. Compared to the optoelectronic device in Embodiment 1, the difference between the optoelectronic device in this embodiment and the one in the following aspects is: Figure 4 As shown, in the direction from the anode 101 to the cathode 102, the active layer 103 includes a first quantum dot layer 1031, a second quantum dot layer 1032, a third quantum dot layer 1033, a fourth quantum dot layer 1034, and a fifth quantum dot layer 1035 stacked sequentially. The first quantum dot layer 1031 is made of the first quantum dot from Example 1, and its thickness is 10 nm. The second quantum dot layer 1032 is made of the second quantum dot from Example 1, and its thickness is 10 nm. The third quantum dot layer 1033 is made of the third quantum dot from Example 1, and its thickness is 10 nm. The fourth quantum dot layer 1034 is made of the second quantum dot from Example 1, and its thickness is 10 nm. The fifth quantum dot layer 1035 is made of the fifth quantum dot, which is Cd. 0.5 Zn 0.5 Se 0.3 S 0.7 / ZnSe / Cd 0.3 Zn 0.7 S / ZnS has an average particle size of 10 nm, an emission wavelength of 630 nm, a peak width of 35 nm, a valence band of -6.6 eV, and a band gap of 1.97 eV.

[0124] The method for preparing the optoelectronic device in this embodiment can be referred to the method for preparing the optoelectronic device in Example 1.

[0125] Example 9

[0126] This embodiment provides an optoelectronic device. Compared to the optoelectronic device in Embodiment 1, the difference between the optoelectronic device in this embodiment and the one in the following aspects is: Figure 5As shown, in the direction from the anode 101 to the cathode 102, the active layer 103 includes a first quantum dot layer 1031, a second quantum dot layer 1032, a third quantum dot layer 1033, a fourth quantum dot layer 1034, a fifth quantum dot layer 1035, and a sixth quantum dot layer 1036 stacked sequentially. The first quantum dot layer 1031 is made of the first quantum dot from Example 1, and its thickness is 10 nm. The second quantum dot layer 1032 is made of the second quantum dot from Example 1, and its thickness is 10 nm. The third quantum dot layer 1033 is made of the third quantum dot from Example 1, and its thickness is 10 nm. The fourth quantum dot layer 1034 is made of the second quantum dot from Example 1, and its thickness is 10 nm. The fifth quantum dot layer 1035 is made of the fifth quantum dot, which is Cd. 0.5 Zn 0.5 Se 0.3 S 0.7 / ZnSe / Cd 0.3 Zn 0.7 S / ZnS, with an average particle size of 10 nm, an emission wavelength of 630 nm, a peak width of 35 nm, a valence band of -6.6 eV, and a band gap of 1.97 eV; the material of the sixth quantum dot layer 1036 includes the second quantum dot in Example 1, and the thickness of the sixth quantum dot layer 1036 is 10 nm.

[0127] The method for preparing the optoelectronic device in this embodiment can be referred to the method for preparing the optoelectronic device in Example 1.

[0128] Example 10

[0129] This embodiment provides an optoelectronic device. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is that: the material of the first quantum dot layer 1031 includes the third quantum dot in Embodiment 1, and the thickness of the first quantum dot layer 1031 is 10 nm; the material of the third quantum dot layer 1033 includes the first quantum dot in Embodiment 1, and the thickness of the third quantum dot layer 1033 is 10 nm.

[0130] The method for preparing the optoelectronic device in this embodiment can be referred to the method for preparing the optoelectronic device in Example 1.

[0131] Comparative Example 1

[0132] This comparative example provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Example 1, the difference between the optoelectronic device in this comparative example and the one in Example 1 is that: Figure 6 As shown, the material of the active layer 103 is the first quantum dot in Example 1, and the thickness of the active layer 103 is 30 nm.

[0133] Compared to the method for preparing the optoelectronic device in Example 1, the method for preparing the optoelectronic device in this comparative example differs in that steps S10.5 and S10.6 are omitted, and step S10.4 is replaced with "under a nitrogen atmosphere at room temperature and pressure, a first quantum dot solution is spin-coated on the side of the hole transport layer away from the hole injection layer. The concentration of the first quantum dot solution in the first quantum dot solution is 20 mg / mL, and the solvent of the first quantum dot solution is n-octane. Then, it is placed under a nitrogen atmosphere and heat-treated at 100°C for 10 min to obtain the active layer." The descriptions of other steps are modified accordingly.

[0134] Comparative Example 2

[0135] This comparative example provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Example 1, the difference between the optoelectronic device in this comparative example and the one in Example 1 is that: Figure 6 As shown, the material of the active layer 103 is the second quantum dot in Example 1, and the thickness of the active layer 103 is 30 nm.

[0136] Compared to the method for preparing the optoelectronic device in Example 1, the method for preparing the optoelectronic device in this comparative example differs in that steps S10.5 and S10.6 are omitted, and step S10.4 is replaced with "under a nitrogen atmosphere at room temperature and pressure, a second quantum dot solution is spin-coated on the side of the hole transport layer away from the hole injection layer. The concentration of the second quantum dot solution in the second quantum dot solution is 20 mg / mL, and the solvent of the second quantum dot solution is n-octane. Then, the solution is placed under a nitrogen atmosphere and heat-treated at 100°C for 10 min to obtain the active layer." The descriptions of other steps are modified accordingly.

[0137] Comparative Example 3

[0138] This comparative example provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Example 1, the difference between the optoelectronic device in this comparative example and the one in Example 1 is that: Figure 6 As shown, the material of the active layer 103 is the third quantum dot in Example 1, and the thickness of the active layer 103 is 30 nm.

[0139] Compared to the method for preparing the optoelectronic device in Example 1, the method for preparing the optoelectronic device in this comparative example differs in that steps S10.5 and S10.6 are omitted, and step S10.4 is replaced with "under a nitrogen atmosphere at room temperature and pressure, a third quantum dot solution is spin-coated on the side of the hole transport layer away from the hole injection layer. The concentration of the third quantum dot in the third quantum dot solution is 20 mg / mL, and the solvent of the third quantum dot solution is n-octane. Then, it is placed under a nitrogen atmosphere and heat-treated at 100°C for 10 min to obtain the active layer." The descriptions of other steps are modified accordingly.

[0140] Experimental Example

[0141] The performance of the optoelectronic devices in Examples 1 to 10 and Comparative Examples 1 to 3 after 1 hour of encapsulation was tested. The performance tests were conducted in an environment with a temperature of 25°C and a relative humidity of 50%.

[0142] The testing instruments include the Fostar FPD optical characteristic measurement equipment and the external quantum efficiency optical testing instrument. The Fostar FPD optical characteristic measurement equipment is an efficiency testing system constructed from components such as a Marine Optics USB2000, a LabVIEW-controlled QE-PRO spectrometer, a Keithley 2400, a high-precision digital source meter Keithley 6485, a 50μm inner diameter optical fiber, device test probes and fixtures, various connecting cables and data cards, an efficiency testing cassette, and a data acquisition system. This system acquires parameters such as the turn-on voltage, current, brightness, and emission spectrum of each optoelectronic device, and then calculates the maximum external quantum efficiency (EQE). max Key parameters such as power efficiency (%) and power efficiency.

[0143] External quantum efficiency (GQE) refers to the ratio of electron-hole pairs injected into a quantum dot to the number of emitted photons, expressed as a percentage (%). It is measured using an optical instrument for measuring GQE. The formula for calculating GQE is as follows:

[0144]

[0145] Where ηe is the optical output coupling efficiency, ηr is the ratio of recombination carriers to injected carriers, χ is the ratio of the number of excitons generating photons to the total number of excitons, and K R K is the radiation process rate. NR This represents the rate of a non-radiative process.

[0146] The device lifetime testing method includes the following steps: Under constant current (2mA) driving, a 128-channel QLED lifetime testing system is used to perform electroluminescence lifetime analysis on each optoelectronic device, record the time (T95,h) required for each optoelectronic device to decay from maximum brightness to 95%, and calculate the time (T95@1000nit,h) required for each optoelectronic device to decay from 100% brightness to 95% brightness at 1000nit using the decay fitting formula.

[0147] The formula for calculating device lifetime is as follows:

[0148]

[0149] In the above formula, T95 L For longer lifespan at low brightness, T95 H For the measured lifetime under high brightness, L HTo accelerate the device to its maximum brightness, L L The value is 1000 nits, and A is the acceleration factor, which is usually between 1.6 and 2. In this experimental example, the value of A for the optoelectronic device is 1.7.

[0150] The performance test data for each optoelectronic device are detailed in Table 2 below:

[0151] Table 2

[0152]

[0153] As shown in Table 2, compared to the optoelectronic devices in Comparative Examples 1 to 3, the optoelectronic devices in Examples 1 to 10 have higher device efficiency and longer device lifespan. Taking the optoelectronic device in Example 2 and the optoelectronic device in Comparative Example 1 as examples, the EQE of the optoelectronic device in Example 2... max Compare the EQE of the optoelectronic device in Comparative Example 1 max The T95@1000nit of the optoelectronic device in Example 2 is 12% higher than that in Example 1, which is 2.3 times higher than that in Example 1.

[0154] This demonstrates that, in the direction from the anode to the cathode, the active layer comprises sequentially stacked quantum dot layers from the first to the Nth quantum dot layer. For any two adjacent quantum dot layers, the absolute value of the valence band of the quantum dots in the odd-numbered quantum dot layer is greater than that in the even-numbered quantum dot layer. This increases the potential barrier for electron injection into the first quantum dot layer, and the even-numbered quantum dot layer can store excess electrons, thereby reducing the number of electrons injected into the first quantum dot layer. This keeps the electron injection level of the optoelectronic device within a suitable range, promotes a balance between electron and hole injection levels, and improves the device lifetime. Furthermore, it can improve the charging phenomenon of quantum dots in the first quantum dot layer, reduce Auger recombination probability, increase radiative recombination probability, and improve the device efficiency of the optoelectronic device.

[0155] The overall performance of the optoelectronic devices in Comparative Examples 1 to 3 is poor because the active layer 103 is made of a single quantum dot, which has a high electron injection level. This results in an imbalance in electron-hole transport, leading to poor optoelectronic performance and device efficiency.

[0156] The foregoing has provided a detailed description of an optoelectronic device and an electronic device provided in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the technical solutions and core ideas of this application. Those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. An optoelectronic device, characterized in that, include: The anode and cathode are positioned opposite each other; as well as An active layer is disposed between the anode and the cathode; Wherein, in the direction from the anode to the cathode, the active layer includes a first quantum dot layer to an Nth quantum dot layer stacked sequentially, where N is a positive integer greater than or equal to 2; in the first quantum dot layer to the Nth quantum dot layer, the absolute value of the valence band of the quantum dot in any odd-numbered quantum dot layer is greater than the absolute value of the valence band of the quantum dot in any even-numbered quantum dot layer.

2. The optoelectronic device according to claim 1, characterized in that, At least one of the following conditions must be met: (1) For any two adjacent quantum dot layers, the difference between the absolute value of the valence band of the quantum dots in the odd-numbered quantum dot layer and the absolute value of the valence band of the quantum dots in the even-numbered quantum dot layer is 0.1 eV to 0.5 eV; (2) In the first quantum dot layer to the Nth quantum dot layer, the absolute value of the difference in band gap between quantum dots in any two quantum dot layers is 0 eV to 0.3 eV; (3) In the first quantum dot layer to the Nth quantum dot layer, the absolute value of the difference between the conduction bands of any two quantum dots in an even-numbered quantum dot layer is 0 eV to 0.3 eV; (4) N is a positive integer not greater than 10.

3. The optoelectronic device according to claim 1 or 2, characterized in that, N is a positive integer greater than or equal to 3. For any two adjacent quantum dot layers, the absolute value of the conduction band of the quantum dots in the odd-numbered quantum dot layer is greater than the absolute value of the conduction band of the quantum dots in the even-numbered quantum dot layer, and satisfies any one of the following conditions: (1) In the direction from the anode to the cathode, the absolute value of the difference between the conduction bands of any two quantum dots in an odd-numbered quantum dot layer is 0 eV to 0.3 eV; (2) In the direction from the anode to the cathode, the absolute value of the conduction band of the quantum dots in the odd-numbered quantum dot layers gradually increases; (3) In the direction from the anode to the cathode, the absolute value of the conduction band of the quantum dots in the odd-numbered quantum dot layers gradually decreases.

4. The optoelectronic device according to claim 1, characterized in that, N is a positive integer greater than or equal to 3; in the first quantum dot layer to the Nth quantum dot layer, the absolute value of the difference in band gap between quantum dots in any two quantum dot layers is 0 eV to 0.1 eV; In the first to the Nth quantum dot layers, the absolute value of the difference between the conduction bands of quantum dots in any two even-numbered quantum dot layers is 0 eV to 0.3 eV; in the direction from the anode to the cathode, the absolute value of the conduction band of quantum dots in odd-numbered quantum dot layers gradually increases.

5. The optoelectronic device according to claim 4, characterized in that, N is 3, 4, or 5.

6. The optoelectronic device according to any one of claims 1, 2, 4 and 5, characterized in that, The active layer is a light-emitting layer that satisfies any one of the following conditions: (1) In the first quantum dot layer to the Nth quantum dot layer, the intrinsic emission peak of the quantum dots in each quantum dot layer under the excitation of light with wavelengths of 250nm to 450nm is independently 496nm to 580nm, the band gap of the quantum dots in each quantum dot layer is independently 2.14eV to 2.5eV, and the valence band of the quantum dots in each quantum dot layer is independently -6.1eV to -5.9eV; (2) In the first quantum dot layer to the Nth quantum dot layer, the intrinsic emission peak of the quantum dots in each quantum dot layer under the excitation of light with wavelengths of 250nm to 450nm is 590nm to 720nm, the band gap of the quantum dots in each quantum dot layer is 1.72eV to 2.1eV, and the valence band of the quantum dots in each quantum dot layer is -6.0eV to -5.8eV.

7. The optoelectronic device according to claim 1, characterized in that, At least one of the following conditions must be met: (1) In the first to the Nth quantum dot layers, the quantum dots in each quantum dot layer are independently selected from one or more of single-component quantum dots, core-shell quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, wherein the core-shell quantum dots include one or more shells; the materials of the single-component quantum dots, the core of the core-shell quantum dots, and the shell of the core-shell quantum dots are independently selected from at least one of group II-VI compounds, group III-VI compounds, group III-V compounds, group IV-VI compounds, or group I-III-VI compounds, wherein the group II-VI compounds are selected from at least one of group III-VI compounds. The material is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, Cd ZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnS One or more of Te, wherein the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, G The group III-VI compounds are selected from one or more of InPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, and the group IV-VI compounds are selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3, and the group IV-VI compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe.The group I-III-VI compounds are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2. The general structural formula of the inorganic perovskite quantum dots is QJT3, the general structural formula of the organic-inorganic hybrid perovskite quantum dots is GJT3, and the general structural formula of the organic perovskite quantum dots is LJT3. J is a divalent metal cation, and each occurrence of J is independently selected from Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ Each time T appears, it is independently selected from Cl. - ,Br - or I - Q is Cs + G is selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ n≥2, L is selected from formamidinyl; (2) The thickness of the active layer is 20 nm to 100 nm; (3) In the first quantum dot layer to the Nth quantum dot layer, the thickness of each quantum dot layer is 10nm to 30nm.

8. The optoelectronic device according to claim 1, characterized in that, At least one of the following conditions must be met: (1) The optoelectronic device further includes an electronic functional layer disposed between the active layer and the cathode. The material of the electronic functional layer includes one or more of a first inorganic material and a second inorganic material. The first inorganic material includes one or more of an undoped second metal oxide and a group IIB-VIA semiconductor material. The undoped second metal oxide is selected from one or more of ZnO, TiO2, and SnO2. The group IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe, CdS, CdSe, ZnTe, and CdTe. The second inorganic material includes one or more doped first compounds, the general formula of which is A. (1-x) M x O, where x is independently greater than 0 and not greater than 0.5 each time it appears, A and M are different, and A and M are independently selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ga, Li, Ga, In and Y; Optionally, the doped first compound is selected from Zn. (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O; (2) The optoelectronic device further includes a hole functional layer disposed between the active layer and the anode, wherein the material of the hole functional layer includes one or more of organic materials, a third inorganic material, and a fourth inorganic material; the organic material includes poly(3,4-vinyldioxythiophene):poly(styrene sulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, polypyrrole, polyaniline, 3-hexyl-substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)] 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4”-tris(carbazole-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl -4,4'-Diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, N,N,N',N'-tetraarylbenzidine The third inorganic material comprises one or more of the following: aniline, 4,4',4”-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, N,N'-diphenyl-N,N'-di-[4-(N,N-diphenylamino)phenyl]benzidine, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], and poly[2-methoxy-5-[(3,7-dimethyloctyloxy)-1,4-phenyl]-1,2-vinyldiyl]; the third inorganic material comprises one or more of the following: graphene, fullerene, oxides of nickel, oxides of molybdenum, oxides of tungsten, oxides of vanadium, p-type gallium nitride, oxides of chromium, oxides of copper, oxides of hafnium, sulfides of copper, sulfides of molybdenum, and sulfides of tungsten.The fourth inorganic material comprises one or more doped second compounds. The main compound of the doped second compound includes graphene, fullerene, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, or tungsten sulfide. The doping element of the doped second compound is selected from one or more of boron, nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metals. The molar amount of the doping element accounts for no more than 50% of the total molar amount of the doped second compound.

9. The optoelectronic device according to claim 8, characterized in that, The optoelectronic device includes a hole functional layer, an active layer, and an electronic functional layer stacked sequentially, wherein the hole functional layer is closer to the anode than the electronic functional layer; the hole functional layer includes a hole injection layer and a hole transport layer stacked together, wherein the hole injection layer is closer to the anode than the hole transport layer; in the first quantum dot layer to the Nth quantum dot layer, the absolute value of the valence band of the quantum dot in each quantum dot layer is greater than the absolute value of the HOMO energy level or valence band of the hole transport layer; Optionally, the HOMO level or valence band of the hole transport layer material is -6.0 eV to -5.3 eV, and / or the hole transport layer material includes poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[bis(4-phenyl)(4-butylphenyl)amine], poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(9-vinylcarbazole), poly One or more of the following: triphenylamine, 4,4',4”-tris(carbazole-9-yl)triphenylamine, 2,2',7,7'-tetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], N,N′-bis(1-nayl)-N,N′-diphenyl-1,1′-diphenyl-4,4′-diamine, and 4,4'-bis(N-carbazole)-1,1'-biphenyl.

10. An electronic device, characterized in that, The electronic device includes a power supply component and an optoelectronic device as described in any one of claims 1 to 9, wherein the optoelectronic device is electrically connected to the power supply component.

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