Cleaning methods and applications of silicon carbide ceramic devices
By combining a multi-step cleaning method with specific chemical reagents, the problem of incomplete removal of contaminants from the surface of silicon carbide ceramic devices has been solved, achieving high cleanliness and substrate protection, and is suitable for cleaning semiconductor devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIJING CGB TECHNOLOGY CO LTD
- Filing Date
- 2026-04-02
- Publication Date
- 2026-06-30
AI Technical Summary
Existing cleaning technologies are unable to completely remove various types of contaminants from the surface of silicon carbide ceramic devices, which can easily cause substrate damage and secondary contamination, and are difficult to meet the stringent cleanliness requirements of the semiconductor industry.
A multi-step cleaning method is employed, including a single water wash, organic matter removal, particulate matter removal, metal ion removal, and a fourth water wash. Specific chemical reagents and ultrasonic technology are used to gradually remove different types of contaminants, ensuring the integrity of the substrate.
It achieves efficient and thorough removal of contaminants, ensuring the surface cleanliness of silicon carbide ceramic devices, meeting the high cleanliness requirements of semiconductor devices, and avoiding substrate damage and secondary contamination.
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