Integrated circuit ultra-high clean deoxidized and humidity-controlled double-effect composite protective material and preparation method thereof

By employing porous silica microspheres as the core layer in integrated circuit packaging materials, combined with an amino-defective zirconium oxygen-water vapor regulation framework shell layer and an aldehyde-modified anthraquinone aniline deoxidizing layer, the problem of functional instability of traditional desiccants and deoxidizers during integrated circuit packaging is solved, achieving stable dual-effect protection under humid and hot conditions.

CN122321807APending Publication Date: 2026-07-03CANJOY NEW MATERIAL CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
CANJOY NEW MATERIAL CO LTD
Filing Date
2026-04-30
Publication Date
2026-07-03

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Abstract

This invention discloses an ultra-high cleanliness deoxygenation and humidity control dual-effect composite protective material for integrated circuits and its preparation method. The material consists of core-shell functional layer hierarchical microspheres, with the core layer being porous silica microspheres, controlling the leaching of soluble Na. + K + The oxygen content is below 0.5 ppb. The middle shell is an in-situ grown amino-deficient zirconium oxygen vapor regulation framework, forming ZrOH or ZrOH2 vapor binding sites and providing amino grafting sites. The outer layer is an aldehyde-modified anthraquinone aniline deoxygenation layer grafted via dynamic imine bonds, fixing divalent cobalt polypyridine oxygen-activated complexes to achieve room temperature oxygen absorption. The method includes clean pretreatment, in-situ shell growth, outer layer grafting and cobalt coordination fixation, rinsing with anhydrous ethanol and ultrapure water, supercritical CO2 extraction, and low-temperature vacuum drying. The material can maintain its deoxygenation capacity under humid and hot conditions for a long time and can be vacuum regenerated to restore its hygroscopic properties, taking into account both low ion dissolution and low particle shedding, making it suitable for wafer and chip packaging storage and transportation environments.
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