A drive system, method and product for power device gate-source reliability testing

Abstract

The application discloses a driving system, method and product for power device gate-source reliability test in the field of power device test, the system comprises a positive voltage circuit and a negative voltage circuit, the positive voltage circuit comprises a driving positive voltage power supply, a boost clamping circuit and a positive pulse energy storage unit, the positive electrode of the driving positive voltage power supply is connected to the input end of the boost clamping circuit, the negative electrode of the driving positive voltage power supply is connected to one end of the positive pulse energy storage unit and is connected to the input end of the positive voltage circuit, the other end of the positive pulse energy storage unit is connected to the output end of the boost clamping circuit and is connected to the output end of the positive voltage circuit; the negative voltage circuit is the same as the positive voltage circuit in structure and is opposite in polarity; one end of the driving positive voltage power supply and the negative voltage circuit is connected to one end of a driving resistor, the other end of the driving resistor is connected to the gate electrode of a measured tube, and the input end of the positive voltage circuit and the output end of the negative voltage circuit are connected to the source electrode of the measured tube. The application can realize dynamic adjustment of the driving voltage change rate of the reliability test of the measured tube DUT.

Description

Technical Field

[0001] This application relates to a drive system, method, and product for power device gate-source reliability testing in the field of power device testing. Background Technology

[0002] In the reliability testing of power devices, gate biasing equipment is usually used to apply positive and reverse voltage stress to the gate of the power device in order to test and evaluate the aging performance and stability of the power device under high stress.

[0003] Please see Figure 1 Existing conventional dynamic gate biasing equipment typically uses a half-bridge drive circuit to implement the sinking and pulling current of the transistor under test (DUT). The rate of change of the gate voltage of the DUT is controlled by adjusting the resistance of the drive resistor RP, thereby changing the drive current; a larger drive current results in a larger rate of change of the drive voltage. The disadvantages of this control method are: 1. The rate of change of the gate voltage of the DUT is limited by the resistance value of the drive resistor, exhibiting a control limit; 2. When different voltage change rate segments need to be controlled, drive resistors with appropriate performance specifications must be selected, requiring hardware replacement, which is cumbersome and complex, slowing down the gate biasing test progress of the DUT.

[0004] To address the aforementioned technical challenges, some engineers have proposed a reliability testing device employing an active drive circuit. This active drive circuit increases the drive voltage during the turn-on and turn-off processes of the transistor under test (DUT), thereby improving the rate of change of the DUT's drive voltage. However, this approach suffers from significant control difficulties and implementation challenges. The solution requires extremely high precision in the switching timing control of the active drive circuit to achieve power switching, reaching nanosecond levels. Furthermore, limitations in the parameter consistency of different circuit components and the propagation delay error of the switching control signal can easily lead to inconsistent high-voltage stress pulse widths at different test stations, thus affecting the consistency of reliability testing for different DUTs. Summary of the Invention

[0005] The test drive system, method, and product enable dynamic adjustment of the drive voltage change rate for reliability testing of the tube under test (DUT).

[0006] Firstly, this application provides a driving system for gate-source reliability testing of power devices, used to apply a gate-source driving voltage to the device under test, including a positive voltage circuit and a negative voltage circuit, specifically adopting the following technical solution: The positive voltage circuit includes a driving positive voltage power supply, a boost clamping circuit, and a positive pulse energy storage unit. The positive terminal of the driving positive voltage power supply is connected to the input terminal of the boost clamping circuit. The negative terminal of the driving positive voltage power supply is connected to one end of the positive pulse energy storage unit and is also connected to the input terminal of the positive voltage circuit. The other end of the positive pulse energy storage unit is connected to the output terminal of the boost clamping circuit and is also connected to the output terminal of the positive voltage circuit. The negative pressure circuit includes a driving negative pressure power supply, a step-down clamping circuit, and a negative pulse energy storage unit. The negative terminal of the driving negative pressure power supply is connected to the output terminal of the step-down clamping circuit. The positive terminal of the driving negative pressure power supply is connected to one end of the negative pulse energy storage unit and is also connected to the output terminal of the negative pressure circuit. The other end of the negative pulse energy storage unit is connected to the input terminal of the step-down clamping circuit and is also connected to the input terminal of the negative pressure circuit. The output terminal of the positive voltage circuit is connected to a positive voltage discharge switch, and the input terminal of the negative voltage circuit is connected to a negative voltage discharge switch. The positive voltage discharge switch and the negative voltage discharge switch are connected to one end of a driving resistor, and the other end of the driving resistor is connected to the gate of the tube under test. The input terminal of the positive voltage circuit and the output terminal of the negative voltage circuit are connected to the source of the tube under test. The positive voltage circuit and the negative voltage circuit apply a positive driving voltage and a negative driving voltage to the gate of the tube under test, respectively.

[0007] By adopting the above technical solution, the pre-charged pulse energy storage unit and the drive voltage power supply jointly provide power to the gate drive circuit of the transistor under test. The pulse energy storage unit provides a pulse supply voltage higher than that of the drive voltage power supply, enabling it to provide a higher drive voltage than conventional half-bridge circuits based on test requirements, thereby achieving a higher drive voltage conversion rate. Furthermore, this pulse power supply mode automatically switches power based on the discharge process of the pulse energy storage unit, eliminating the need for precise switching timing control, simplifying control, and ensuring high test consistency.

[0008] Preferably, the boost clamping circuit includes a positive clamping diode, a positive pulse charging switch, and a positive high voltage power supply. The positive terminal of the positive clamping diode is connected to the negative terminal of the positive high voltage power supply and is connected to the input terminal of the boost clamping circuit. The positive terminal of the positive high voltage power supply is connected to the negative terminal of the positive clamping diode through the positive pulse charging switch and is connected to the output terminal of the boost clamping circuit. The step-down clamping circuit includes a negative clamping diode, a negative pulse charging switch, and a negative high-voltage power supply. The negative terminal of the negative high-voltage power supply is connected to the positive terminal of the negative clamping diode through the negative pulse charging switch and is connected to the input terminal of the step-down clamping circuit. The positive terminal of the negative high-voltage power supply is connected to the negative terminal of the negative clamping diode and is connected to the output terminal of the step-down clamping circuit.

[0009] By adopting the above technical solution, the pulse energy storage unit is charged by a high-voltage power supply, the working mode is switched by a pulse charging switch, and the gate drive voltage is clamped by a clamping diode after the discharge voltage of the pulse energy storage unit drops.

[0010] Preferably, the voltages of the positive high-voltage power supply and the negative high-voltage power supply are adjusted according to the test requirements for the grid bias voltage change rate of the tube under test.

[0011] By adopting the above technical solution, the pulse power supply voltage can be freely adjusted based on the charging voltage, realizing stepless adjustment of the driving circuit current and the rate of change of the driving voltage of the tube under test. Moreover, this adjustment is not limited by the driving resistor and does not require replacement of the driving resistor.

[0012] Preferably, the positive voltage pulse charging switch, the negative voltage pulse charging switch, the positive voltage discharging switch, and the negative voltage discharging switch are power semiconductor switches, which are respectively connected to the test control module.

[0013] Preferably, the positive pulse energy storage unit and the negative pulse energy storage unit are energy storage capacitors, including multilayer ceramic capacitors (MLCCs) and thin film capacitors.

[0014] By adopting the above technical solution, suitable circuit components can be provided for positive and negative voltage circuits, thereby realizing the pulse voltage power supply and drive voltage clamping functions of positive and negative voltage circuits.

[0015] Secondly, this application provides a driving method for gate-source reliability testing of power devices, which employs the aforementioned driving system and specifically includes the following steps: Turn off the positive voltage discharge switch, adjust the boost clamping circuit to boost mode, and charge the positive pulse energy storage unit together with the positive voltage power supply through the boost clamping circuit and the drive positive voltage power supply. Turn on the positive voltage discharge switch, adjust the boost clamping circuit to clamping mode, and apply a positive drive voltage to the gate of the tube under test through the positive pulse energy storage unit. When the voltage of the positive pulse energy storage unit drops below the voltage of the driving positive voltage power supply, the drive voltage of the tube under test is clamped within the voltage range of the driving positive voltage power supply through the boost clamping circuit. Turn off the negative voltage discharge switch, adjust the step-down clamping circuit to boost mode, and charge the negative pulse energy storage unit together with the drive negative voltage power supply through the step-down clamping circuit; Turn on the negative voltage discharge switch and adjust the step-down clamping circuit to clamping mode. Apply a negative drive voltage to the gate of the tube under test through the negative pulse energy storage unit. When the voltage of the negative pulse energy storage unit drops below the voltage of the driving negative voltage power supply, the drive voltage of the tube under test is clamped within the range of the driving negative voltage power supply through the step-down clamping circuit.

[0016] By adopting the above technical solution, the charging and discharging of the pulse energy storage unit can be switched and controlled by adjusting the switching of the positive voltage discharge switch and the negative voltage discharge switch. This enables the positive and negative pulse energy storage units to alternately supply pulse power to the gate of the tube under test, and to charge during the interval of pulse power supply. This achieves a periodic positive and negative gate voltage pulse power supply process for reliability testing of power devices.

[0017] Preferably, in boost mode, the positive pulse charging switch of the boost clamping circuit is turned on, and the positive pulse energy storage unit is charged by the positive high voltage power supply and the driving positive voltage power supply. In clamp mode, the positive pulse charging switch is turned off. When the voltage of the positive pulse energy storage unit drops below the driving positive voltage power supply, the positive clamping diode is turned on, clamping the driving voltage of the tube under test at the voltage of the driving positive voltage power supply minus the diode voltage drop. In boost mode, the buck clamping circuit turns on the negative pulse charging switch, charging the negative pulse energy storage unit together through the negative high voltage power supply and the driving negative voltage power supply. In clamping mode, the buck clamping circuit turns off the negative pulse charging switch. When the voltage of the negative pulse energy storage unit drops below the driving negative voltage power supply, the negative clamping diode turns on, clamping the driving voltage of the tube under test at the voltage of the driving negative voltage power supply plus the diode voltage drop.

[0018] By adopting the above technical solution, the working mode control of the boost clamping circuit and the buck clamping circuit is realized through the positive voltage pulse charging switch and the negative voltage pulse charging switch. In the boost mode, the high voltage power supply is connected to the charging circuit of the pulse energy storage unit, so that the voltage of the pulse energy storage unit is higher than that of the driving power supply, which can provide pulse power supply to the gate drive voltage of the tube under test. In the clamping mode, the high voltage power supply is disconnected from the circuit, and the gate drive circuit of the tube under test is powered through the pulse energy storage unit. When its voltage drops, the gate drive voltage of the tube under test is clamped through the clamping diode.

[0019] Preferably, the positive pressure discharge switch and the negative pressure discharge switch are not turned on at the same time, and the positive pressure discharge switch and the negative pressure discharge switch wait for a first dead time between their turn-on times.

[0020] By adopting the above technical solution, it is ensured that the positive pressure discharge switch and the negative pressure discharge switch are not opened at the same time, thus avoiding mutual interference between power supply circuits with different directions.

[0021] Preferably, after the positive voltage discharge switch is closed, the positive voltage pulse charging switch is opened after waiting for the second dead time, and the positive high voltage power supply is started to charge the positive pulse energy storage unit; after the negative voltage discharge switch is closed, the negative voltage pulse charging switch is opened after waiting for the second dead time, and the negative high voltage power supply is started to charge the negative pulse energy storage unit.

[0022] By adopting the above technical solution, it is ensured that the discharge switch is closed when the pulse energy storage unit is being charged, which helps to achieve zero-voltage switching of the switching transistor and avoids the simultaneous conduction of the discharge switch and pulse charging switch in the same direction due to the delay of the switching transistor control signal, thereby improving the system reliability.

[0023] Thirdly, the computer program product provided in this application employs a technical solution including a computer program or instructions, which enables the computer program or instructions to implement the steps in the driving method for the gate-source reliability test of the power device described above.

[0024] In summary, this application includes at least one of the following beneficial technical effects: 1. This application provides a high-voltage pulse drive voltage to the gate of the transistor under test (DUT) through a positive pulse energy storage unit and a negative pulse energy storage unit set by a positive voltage circuit and a negative voltage circuit, and can obtain a high drive voltage change rate that meets the test requirements based on the voltage level of the pulse energy storage unit.

[0025] 2. This application achieves the adjustment of the driving voltage change rate of the tested tube without changing the driving resistor value, but by changing the charging voltage of the pulse energy storage unit. This enables convenient software control, avoids hardware adjustments to the circuit, and improves testing and debugging efficiency.

[0026] 3. This application automatically controls the switching between pulse voltage and drive voltage by changing the potential of the pulse energy storage unit. The power supply switching control process does not require the intervention of switches or control programs, and does not require precise switching timing control down to the nanosecond level. The control scheme is convenient, efficient, has low precision requirements, and is low in cost.

[0027] 4. This application achieves pulse width control of pulse voltage through the hardware performance of the pulse energy storage unit itself, avoiding the problem of inconsistent high voltage pulse widths caused by the propagation delay error of control signals from integrated circuits such as gate drive chips or switching transistors, and achieving good consistency in multi-station testing. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the architecture of an existing conventional dynamic gate bias device; Figure 2 This is a schematic diagram of the architecture of a drive system for gate-source reliability testing of a power device according to an embodiment of this application; Figure 3 This is a schematic flowchart of a driving method for gate-source reliability testing of a power device according to an embodiment of this application; Figure 4 This is a schematic diagram of the architecture of an exemplary computer device in an embodiment of this application. Detailed Implementation

[0029] This specific embodiment is merely an explanation of this application and is not intended to limit it. After reading this specification, those skilled in the art can make modifications to this embodiment without contributing any inventive step, but such modifications are protected by patent law as long as they are within the scope of this application.

[0030] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. It should be noted that in the optional embodiments of this application, the object information and other related data involved require the permission or consent of the object when the embodiments of this application are applied to specific products or technologies, and the collection, use, and processing of related data must comply with the relevant laws, regulations, and standards of the relevant countries and regions. That is to say, if the embodiments of this application involve data related to the object, it needs to be obtained with the authorization and consent of the object, the authorization and consent of the relevant departments, and in compliance with the relevant laws, regulations, and standards of the country and region. If personal information is involved in the embodiments, the acquisition of all personal information requires the consent of the individual. If sensitive information is involved, the separate consent of the information subject is required, and the embodiments also need to be implemented with the authorization and consent of the object.

[0031] The embodiments of this application will now be described in further detail with reference to the accompanying drawings.

[0032] Please see Figure 2 A driving system for gate-source reliability testing of power devices according to an embodiment of this application includes a positive voltage circuit 1, a negative voltage circuit 2, a positive voltage discharge switch 3, a negative voltage discharge switch 4, and a driving resistor R. P and the DUT (Device Under Test).

[0033] The output terminal of the positive pressure circuit 1 is connected to the positive pressure discharge switch 3, and the input terminal of the negative pressure circuit 2 is connected to the negative pressure discharge switch 4. The output terminal of the positive pressure discharge switch 3 and the input terminal of the negative pressure circuit 2 are connected in parallel to the driving resistor R. P One end, driving resistor R P The other end is connected to the gate of the transistor under test (DUT), and the source of the DUT is connected to the input of the positive voltage circuit 1 and the output of the negative voltage circuit 2, respectively. The positive voltage circuit 1 provides a positive drive voltage to the gate of the DUT, and the negative voltage circuit 2 provides a negative drive voltage to the gate of the DUT.

[0034] To provide a high-voltage pulse to the gate of the transistor under test (DUT), in this embodiment, a positive voltage power supply V11 and a positive pulse energy storage unit C1 are respectively provided in the positive voltage circuit 1, and a negative voltage power supply V21 and a negative pulse energy storage unit C2 are provided in the negative voltage circuit 2. Furthermore, the voltages of both the positive pulse energy storage unit C1 and the negative pulse energy storage unit C2 are higher than those of the positive voltage power supply V11 and the negative voltage power supply V21, respectively. During the pulse power supply phase, power is supplied to the drive circuit of the DUT through the pulse energy storage unit to obtain a higher rate of change of drive voltage; after the voltage of the pulse energy storage unit drops, the drive power supply is used for stable power supply.

[0035] To enable the positive pulse energy storage unit C1 and the negative pulse energy storage unit C2 to periodically charge and discharge during the reliability testing of the DUT, thereby testing the aging performance of the DUT, the embodiments of this application employ the following circuit design. The circuit structure of the positive voltage circuit 1 will be described in detail below as an example.

[0036] The positive voltage circuit 1 includes a driving positive voltage power supply V11, a boost clamping circuit, and a positive pulse energy storage unit C1. The positive terminal of the driving positive voltage power supply V11 is connected to the input terminal of the boost clamping circuit, the negative terminal of the driving positive voltage power supply V11 is connected to one end of the positive pulse energy storage unit C1 and together they are connected to the input terminal of the positive voltage circuit, and the other end of the positive pulse energy storage unit C1 is connected to the output terminal of the boost clamping circuit and together they are connected to the output terminal of the positive voltage circuit.

[0037] More specifically, the boost clamping circuit includes a positive clamping diode D1, a positive pulse charging switch K1, and a positive high-voltage power supply V12. The anode of the positive clamping diode D1 is connected to the cathode of the positive high-voltage power supply V12 and is connected to the input terminal of the boost clamping circuit. The anode of the positive high-voltage power supply V12 is connected to the cathode of the positive clamping diode D1 through the positive pulse charging switch K1 and is connected to the output terminal of the boost clamping circuit.

[0038] The boost clamping circuit is used to switch the operating mode of the positive voltage circuit 1.

[0039] Before the rising edge of the drive voltage of the transistor under test (DUT) arrives, the positive pulse charging switch K1 closes, driving the positive voltage power supply V11 and the positive high voltage power supply V12 in series to charge the positive pulse energy storage unit C1, making the voltage of the positive pulse energy storage unit C1 higher than that of the driving positive voltage power supply V11. At this time, the positive voltage discharging switch 3 opens. Since the voltage of the positive pulse energy storage unit C1 directly affects the gate drive voltage change rate of the DUT, the potential of the positive high voltage power supply V12 can be adjusted according to the test requirements of the drive voltage change rate, thereby adjusting the voltage of the positive pulse energy storage unit C1. This adjustment process does not require any changes to the circuit hardware; only the potential of the positive high voltage power supply V12 needs to be adjusted by software to achieve stepless adjustment of the gate voltage change rate of the DUT.

[0040] When the positive pulse energy storage unit C1 is fully charged, the positive voltage pulse charging switch K1 is disconnected, cutting off the positive high voltage power supply V12 from the circuit. At this time, the positive voltage discharge switch 3 closes. Since the voltage of the positive pulse energy storage unit C1 is higher than that of the driving positive voltage power supply V11, it first discharges through the positive pulse energy storage unit C1, providing a positive pulse gate drive voltage for the transistor under test (DUT). When the voltage of the positive pulse energy storage unit C1 is lower than that of the driving positive voltage power supply V11, the positive voltage clamping diode D1 conducts, clamping the gate drive voltage of the DUT at the driving positive voltage -0.6V (diode voltage drop). This switching process does not require the intervention of the switching transistor or the switching control program; it is automatically implemented based on the hardware performance of the positive pulse energy storage unit C1, avoiding the high precision requirements of the switching control.

[0041] It should be noted that the negative voltage circuit 2 includes a driving negative voltage power supply V21, a step-down clamping circuit, and a negative pulse energy storage unit C2. The step-down clamping circuit includes a negative voltage clamping diode D2, a negative voltage pulse charging switch K2, and a negative high voltage power supply V22. The circuit structure of the negative voltage circuit 2 is the same as that of the positive voltage circuit 1, but with opposite polarities, and will not be described in detail here.

[0042] The function of the negative voltage circuit 2 is similar to that of the positive voltage circuit 1. Before the falling edge of the drive voltage of the DUT arrives, the negative voltage pulse charging switch K2 closes and the negative voltage discharging switch 4 opens, thereby charging the negative pulse energy storage unit C2.

[0043] When the negative pulse energy storage unit C2 is fully charged, the negative voltage pulse charging switch K2 is disconnected, and the negative voltage discharge switch 4 is closed. The negative pulse energy storage unit C2 discharges, providing a negative pulse gate drive voltage for the transistor under test (DUT). When the voltage of the negative pulse energy storage unit C2 is lower than the voltage of the driving negative voltage power supply V21, the negative voltage clamping diode D2 conducts, clamping the gate drive voltage of the DUT at the driving negative voltage +0.6V (diode voltage drop).

[0044] It should also be noted that the positive voltage pulse charging switch K1, negative voltage pulse charging switch K2, positive voltage discharging switch 3, and negative voltage discharging switch 4 mentioned above are power semiconductor switches, such as various MOSFETs and IGBTs. The descriptions of the opening and closing of these switches are consistent with the meanings of cutoff and conduction of semiconductor switches. These switches are connected to the test control module and receive timing control from the test control system. The timing control of these power semiconductor switches is mainly used for the charging control of the pulse energy storage unit and the switching control between positive and negative voltage discharge; it does not involve the switching control of pulse power supply, therefore the accuracy requirements for timing control are greatly reduced.

[0045] In addition, the positive pulse energy storage unit C1 and the negative pulse energy storage unit C2 can be various types of capacitors, including multilayer ceramic chip capacitors (MLCCs) and film capacitors.

[0046] Unless otherwise stated, all circuit components in the circuit diagrams of this application are connected in a manner commonly used by those skilled in the art, and such connections do not constitute a limitation on the technical solution of this invention. Passive components such as decoupling capacitors, pull-up / pull-down resistors, and grounding wires not shown in the figures are connected in accordance with general electronic circuit design specifications, and specific parameters can be adjusted according to actual application scenarios.

[0047] Please see Figure 3 A driving method for gate-source reliability testing of a power device according to an embodiment of this application includes the following steps: S1, based on the gate drive power change rate test requirements of the DUT, sets the potentials of the positive high voltage power supply and the negative high voltage power supply, and sets the number of cycles for repeated testing of the system.

[0048] S2, Start Test. Before the rising edge of the drive voltage of the tube under test (DUT) arrives, the positive voltage discharge switch is turned off, the positive voltage pulse charging switch is turned on, and the positive pulse energy storage unit is charged.

[0049] It should be noted that a second dead time needs to be inserted between the cutoff of the positive voltage discharge switch and the turn-on of the positive voltage pulse charging switch. This helps to achieve zero-voltage switching of the switching transistor and avoids the simultaneous turn-on of the discharge switch and pulse charging switch in the same direction due to the delay of the control signal of the switching transistor, thereby improving the reliability of the system.

[0050] After the charging time reaches the preset time and the positive pulse energy storage unit reaches the preset voltage, the positive voltage pulse charging switch is turned off, cutting off the positive high voltage power supply from the circuit.

[0051] S3, the positive voltage discharge switch is turned on at the preset time point, the positive pulse energy storage unit discharges to the tube under test (DUT), and the positive voltage power supply is powered after the voltage of the positive pulse energy storage unit is lower than that of the driving positive voltage power supply.

[0052] S4. When the positive voltage discharge switch is turned on, the negative voltage discharge switch is turned off before the falling edge of the drive voltage of the tube under test (DUT) arrives. After waiting for the second dead time, the negative voltage pulse charging switch is turned on, and the negative pulse energy storage unit is charged until the charging reaches the preset time and the negative pulse energy storage unit reaches the preset voltage. Then the negative voltage pulse charging switch is turned off, and the negative high voltage power supply is cut off from the circuit.

[0053] S5, the negative voltage discharge switch is turned on at the preset time point, the negative pulse energy storage unit discharges to the tube under test (DUT), and the negative voltage power supply is powered after the voltage of the negative pulse energy storage unit is lower than that of the driving negative voltage power supply.

[0054] It should be noted that the positive pressure discharge switch and the negative pressure discharge switch are not turned on at the same time. The positive pressure discharge switch and the negative pressure discharge switch wait for the first dead time between their turn-on time to avoid mutual interference between the positive pressure circuit and the negative pressure circuit.

[0055] S6. Perform a test cycle count check. If the number of test cycles has not reached the preset value, repeat steps S2-S5. If the number of test cycles has reached the preset value, end the test.

[0056] It should be understood that the sequence number of each step in the above embodiments does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0057] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process of the driving method for power device gate-source reliability testing described above can be referred to the corresponding description in the foregoing system embodiments, and will not be repeated here.

[0058] In one embodiment of this application, a computer device is provided, the internal structure of which can be shown as follows: Figure 4 As shown, the computer device includes a processor, memory, network interface, and database connected via a system bus. The processor provides computing and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system, computer programs, and database. The internal memory provides an environment for the operation of the operating system and computer programs stored in the non-volatile storage media. The database stores the potential setting data for the positive and negative high-voltage power supplies, and the timing control data for the positive pulse charging switch, positive discharge switch, negative pulse charging switch, and negative discharge switch. The network interface connects to the test system control module for communication and control of the various switching transistors. When executed by the processor, the computer program implements a driving method for power device gate-source reliability testing.

[0059] As used in the above embodiments, depending on the context, the term "when..." can be interpreted as meaning "if...", "after...", "in response to determining...", or "in response to detecting...". Similarly, depending on the context, the phrase "when determining..." or "if (the stated condition or event) is interpreted as meaning "if determining...", "in response to determining...", "when (the stated condition or event) is detected", or "in response to detecting (the stated condition or event)".

[0060] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included within the protection scope of the present invention.

Claims

1. A driving system for gate-source reliability testing of power devices, used to apply a gate-source driving voltage to the transistor under test, comprising a positive voltage circuit and a negative voltage circuit, characterized in that: The positive voltage circuit includes a driving positive voltage power supply, a boost clamping circuit, and a positive pulse energy storage unit. The positive terminal of the driving positive voltage power supply is connected to the input terminal of the boost clamping circuit. The negative terminal of the driving positive voltage power supply is connected to one end of the positive pulse energy storage unit and is also connected to the input terminal of the positive voltage circuit. The other end of the positive pulse energy storage unit is connected to the output terminal of the boost clamping circuit and is also connected to the output terminal of the positive voltage circuit. The boost clamping circuit includes a positive clamping diode, a positive pulse charging switch, and a positive high voltage power supply. The positive terminal of the positive clamping diode is connected to the negative terminal of the positive high voltage power supply and is connected to the input terminal of the boost clamping circuit. The positive terminal of the positive high voltage power supply is connected to the negative terminal of the positive clamping diode through the positive pulse charging switch and is connected to the output terminal of the boost clamping circuit. The negative pressure circuit includes a driving negative pressure power supply, a step-down clamping circuit, and a negative pulse energy storage unit. The negative terminal of the driving negative pressure power supply is connected to the output terminal of the step-down clamping circuit. The positive terminal of the driving negative pressure power supply is connected to one end of the negative pulse energy storage unit and is also connected to the output terminal of the negative pressure circuit. The other end of the negative pulse energy storage unit is connected to the input terminal of the step-down clamping circuit and is also connected to the input terminal of the negative pressure circuit. The buck clamping circuit includes a negative clamping diode, a negative pulse charging switch, and a negative high voltage power supply. The negative terminal of the negative high voltage power supply is connected to the positive terminal of the negative clamping diode through the negative pulse charging switch and is connected to the input terminal of the buck clamping circuit. The positive terminal of the negative high voltage power supply is connected to the negative terminal of the negative clamping diode and is connected to the output terminal of the buck clamping circuit. The output terminal of the positive voltage circuit is connected to a positive voltage discharge switch, and the input terminal of the negative voltage circuit is connected to a negative voltage discharge switch. The positive voltage discharge switch and the negative voltage discharge switch are connected to one end of a driving resistor, and the other end of the driving resistor is connected to the gate of the tube under test. The input terminal of the positive voltage circuit and the output terminal of the negative voltage circuit are connected to the source of the tube under test. The positive voltage circuit and the negative voltage circuit apply a positive driving voltage and a negative driving voltage to the gate of the tube under test, respectively.

2. The driving system for gate-source reliability testing of power devices according to claim 1, characterized in that, The voltages of the positive high-voltage power supply and the negative high-voltage power supply are adjusted according to the test requirements for the grid bias voltage change rate of the tube under test.

3. The driving system for gate-source reliability testing of power devices according to claim 1, characterized in that, The positive voltage pulse charging switch, the negative voltage pulse charging switch, the positive voltage discharging switch, and the negative voltage discharging switch are power semiconductor switches and are respectively connected to the test control module.

4. The driving system for gate-source reliability testing of power devices according to claim 1, characterized in that, The positive pulse energy storage unit and the negative pulse energy storage unit are energy storage capacitors, including multilayer ceramic chip capacitors (MLCCs) and thin film capacitors.

5. A driving method for gate-source reliability testing of power devices, employing the driving system described in any one of claims 1 to 4, characterized in that, Includes the following steps: Turn off the positive voltage discharge switch, adjust the boost clamping circuit to boost mode, and charge the positive pulse energy storage unit together with the positive voltage power supply through the boost clamping circuit and the drive positive voltage power supply. Turn on the positive voltage discharge switch, adjust the boost clamping circuit to clamping mode, and apply a positive drive voltage to the gate of the tube under test through the positive pulse energy storage unit. When the voltage of the positive pulse energy storage unit drops below the voltage of the driving positive voltage power supply, the drive voltage of the tube under test is clamped within the voltage range of the driving positive voltage power supply through the boost clamping circuit. Turn off the negative voltage discharge switch, adjust the step-down clamping circuit to boost mode, and charge the negative pulse energy storage unit together with the drive negative voltage power supply through the step-down clamping circuit; Turn on the negative voltage discharge switch and adjust the step-down clamping circuit to clamping mode. Apply a negative drive voltage to the gate of the tube under test through the negative pulse energy storage unit. When the voltage of the negative pulse energy storage unit drops below the voltage of the driving negative voltage power supply, the drive voltage of the tube under test is clamped within the range of the driving negative voltage power supply through the step-down clamping circuit.

6. The driving method for gate-source reliability testing of a power device according to claim 5, characterized in that, In boost mode, the positive pulse charging switch of the boost clamping circuit is turned on, and the positive pulse energy storage unit is charged by the positive high voltage power supply and the driving positive voltage power supply. In clamp mode, the positive pulse charging switch is turned off. When the voltage of the positive pulse energy storage unit drops below the driving positive voltage power supply, the positive clamping diode turns on, clamping the driving voltage of the tube under test at the voltage of the driving positive voltage power supply minus the diode voltage drop. In boost mode, the buck clamping circuit turns on the negative pulse charging switch, charging the negative pulse energy storage unit together through the negative high voltage power supply and the driving negative voltage power supply. In clamping mode, the buck clamping circuit turns off the negative pulse charging switch. When the voltage of the negative pulse energy storage unit drops below the driving negative voltage power supply, the negative clamping diode turns on, clamping the driving voltage of the tube under test at the voltage of the driving negative voltage power supply plus the diode voltage drop.

7. The driving method for gate-source reliability testing of a power device according to claim 5, characterized in that, The positive pressure discharge switch and the negative pressure discharge switch are not opened at the same time. The positive pressure discharge switch and the negative pressure discharge switch wait for the first dead time between their opening times.

8. The driving method for gate-source reliability testing of a power device according to claim 7, characterized in that, After the positive voltage discharge switch is closed, wait for the second dead time and then turn on the positive voltage pulse charging switch to start the positive high voltage power supply to charge the positive pulse energy storage unit; after the negative voltage discharge switch is closed, wait for the second dead time and then turn on the negative voltage pulse charging switch to start the negative high voltage power supply to charge the negative pulse energy storage unit.

9. A computer program product, characterized in that, The computer program product includes a computer program or instructions that enable the computer program or instructions to perform the steps in the driving method for power device gate-source reliability testing as described in claim 5.

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