LDMOS device and method of forming the same
CN122340863APending Publication Date: 2026-07-03CHONGQING XINLIAN MICROELECTRONICS CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHONGQING XINLIAN MICROELECTRONICS CO LTD
- Filing Date
- 2025-12-18
- Publication Date
- 2026-07-03
AI Technical Summary
Technical Problem
Traditional STI technology has limitations in reducing electric field concentration effects. The DR effect of split-STI LDMOS only occurs in two directions and cannot be fully realized.
Method used
By employing an H-shaped shallow trench isolation structure and introducing an inversion doped region within the drift region, combined with a special gate design, the DR effect is enhanced, and the relationship between breakdown voltage and on-resistance is balanced.
Benefits of technology
While maintaining the same breakdown voltage, the on-resistance is reduced, and the electric field uniformity and current path efficiency are improved.
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Smart Images
Figure CN122340863A_ABST
Abstract
This invention provides an LDMOS device with a shallow trench isolation structure located within a high-voltage well region. The shallow trench isolation structure is H-shaped and includes multiple first portions extending along a first direction and second portions extending along a second direction, with the first and second portions intersecting perpendicularly. A drift region surrounds the shallow trench isolation structure and is located within the high-voltage well region. An inversion-doped region is located within the drift region and between adjacent first portions of the shallow trench isolation structure, with the depth of the inversion-doped region being greater than the depth of the shallow trench isolation structure but less than the depth of the drift region. This invention employs an H-shaped STI structure LDMOS transistor, which can enhance the DR effect from multiple directions and better balance the relationship between the device's breakdown voltage and specific on-resistance. Simultaneously, by introducing an inversion-doped region within the drift region, the surface electric field effect is reduced, maintaining the same breakdown voltage while increasing the doping concentration of the drift region, thereby reducing the on-resistance.
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