Method for manufacturing a semiconductor device
CN122342328APending Publication Date: 2026-07-03RESONAC CORP
Patent Information
- Application Number
- CN202380097618.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-08
- Publication Date
- 2026-07-03
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Figure CN122342328A_ABST
Abstract
This invention discloses a method for manufacturing an insert using a sealing resin. In this method, a resist layer (20) is formed on a support substrate (10), and another resist layer (30) is formed on the resist layer (20). A mask M with an exposure pattern is placed above the resist layer (30), and both the resist layer (20) and the resist layer (30) are exposed together. The exposed resist layer (20) and the resist layer (30) are developed together to obtain an opening pattern P. A metal pillar (40) is formed on the opening pattern P using a metal plating solution. In this method, the diameter or width (R2) of the opening (31) formed on the outer resist layer (30) is larger than the diameter or width (R1) of the opening (21) formed on the inner resist layer (20). As a result, the metal plating solution can easily penetrate from the opening (31) toward the opening (21), and a metal pillar (40) of sufficient height can be formed.
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Citation Information
Patent Citations
Manufacturing method of printed board, printed board and semiconductor package
JP2004006773A
Semiconductor device and method of manufacturing the same
JP2016213238A