Method for manufacturing a semiconductor device

CN122342328APending Publication Date: 2026-07-03RESONAC CORP
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Patent Information

Application Number
CN202380097618.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-12-08
Publication Date
2026-07-03

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Abstract

This invention discloses a method for manufacturing an insert using a sealing resin. In this method, a resist layer (20) is formed on a support substrate (10), and another resist layer (30) is formed on the resist layer (20). A mask M with an exposure pattern is placed above the resist layer (30), and both the resist layer (20) and the resist layer (30) are exposed together. The exposed resist layer (20) and the resist layer (30) are developed together to obtain an opening pattern P. A metal pillar (40) is formed on the opening pattern P using a metal plating solution. In this method, the diameter or width (R2) of the opening (31) formed on the outer resist layer (30) is larger than the diameter or width (R1) of the opening (21) formed on the inner resist layer (20). As a result, the metal plating solution can easily penetrate from the opening (31) toward the opening (21), and a metal pillar (40) of sufficient height can be formed.
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Citation Information

Patent Citations

  • Manufacturing method of printed board, printed board and semiconductor package

    JP2004006773A

  • Semiconductor device and method of manufacturing the same

    JP2016213238A