Mems probe card testing method, apparatus, device, and storage medium

Abstract

The application relates to the technical field of probe card testing, and discloses a MEMS probe card testing method, device, equipment and storage medium, which comprises the following steps: grouping N probes of a MEMS probe card to be tested to obtain a test channel configuration table of M test groups; configuring a test loop for the probes of each test group based on the test channel configuration table and collecting voltage data of each probe during the process of pressing the probes to contact a substrate; dividing the voltage data by a test current to obtain a transient contact resistance sequence, and calculating the resistance stabilization rate of each probe based on the transient contact resistance sequence; selecting a probe corresponding to the maximum value of the resistance stabilization rate as a reference probe, calculating the resistance stabilization rate difference between the remaining probes and the reference probe divided by the reference value to obtain the rate deviation ratio of each probe; and screening probes with a rate deviation ratio exceeding a preset threshold as abnormal probes, thereby improving the accuracy of MEMS probe card testing.

Description

Technical Field

[0001] This invention relates to the field of probe card testing technology, and in particular to a MEMS probe card testing method, apparatus, equipment and storage medium. Background Technology

[0002] The contact quality of MEMS probe cards directly affects the accuracy and reliability of test results. Existing technologies assess electrical connectivity by measuring the final conductivity state between the probe and the pad. When there is a significant deviation in the probe, it can lead to inconsistent contact timing and uneven distribution of contact force, which in turn causes a deterioration in contact resistance stability. Summary of the Invention

[0003] This invention provides a MEMS probe card testing method, apparatus, device, and storage medium. This invention can identify abnormal probes with high deviations without additional optical or mechanical measurement equipment, thereby improving the accuracy of MEMS probe card testing.

[0004] In a first aspect, the present invention provides a MEMS probe card testing method, the MEMS probe card testing method comprising: The N probes of the MEMS probe card under test are grouped to obtain a test channel configuration table for M test groups; Based on the test channel configuration table, test circuits are configured for the probes of each test group, and voltage data of each probe is collected during the process of the probe pressing down to contact the substrate. Divide the voltage data by the test current to obtain the instantaneous contact resistance sequence, and calculate the resistance stabilization rate of each probe based on the instantaneous contact resistance sequence; The probe corresponding to the maximum resistance stability rate is selected as the reference probe. The resistance stability rate difference between the remaining probes and the reference probe is calculated and divided by the reference value to obtain the rate deviation ratio of each probe. Probes whose rate deviation ratio exceeds a preset threshold are selected as abnormal probes.

[0005] In conjunction with the first aspect, in a first implementation of the first aspect of the present invention, the step of grouping the N probes of the MEMS probe card under test to obtain a test channel configuration table of M test groups includes: A planar coordinate system is established with the first probe in the upper left corner of the MEMS probe card array under test as the origin. The position coordinates and pitch period of each of the N probes are obtained to obtain the probe array parameters. Based on the probe array parameters, starting from the initial probe, one probe is selected at intervals and assigned to the same test group, resulting in M ​​test groups. A test channel configuration table for the M test groups is then constructed.

[0006] In conjunction with the first aspect, in a second implementation of the first aspect of the present invention, the step of configuring test circuits for the probes of each test group based on the test channel configuration table and collecting voltage data of each probe during the process of the probe pressing down on the contact substrate includes: According to the test channel configuration table, four independent wires are configured for each test group probe. The current injection wire is connected to the probe conductive support end and the substrate ground layer to form a current loop. The voltage measurement wire is connected to the probe sampling point and the substrate ground point to form a voltage measurement loop, thus obtaining the test loop. The constant current source current amplitude and output impedance parameters are set for the test circuit, and the MEMS probe card is controlled to press down from the suspended position at a constant speed to the first probe contact substrate trigger force sensor to obtain a synchronous trigger signal. Based on the synchronous trigger signal, the constant current source and differential voltmeter of each test channel are activated, and the instantaneous voltage values ​​at both ends of each probe are continuously collected within a preset time window at a fixed sampling frequency to obtain voltage data.

[0007] In conjunction with the first aspect, in a third implementation of the first aspect of the present invention, the step of activating the constant current source and differential voltmeter of each test channel based on the synchronous trigger signal, and continuously acquiring the instantaneous voltage values ​​across each probe within a preset time window at a fixed sampling frequency to obtain voltage data, includes: Upon receiving the synchronous trigger signal, the constant current source of each test channel is started synchronously, injecting a constant amplitude test current into the conductive support end of each probe and forming a stable current loop through the substrate grounding layer, thereby generating the current excitation state of each probe. Based on the differential voltmeter under the current excitation state, the sampling frequency and time window are set so that the sampling interval is equal to the reciprocal of the sampling frequency and the total number of sampling points is equal to the product of the time window and the sampling frequency, thus obtaining the voltage acquisition parameters. Based on the voltage acquisition parameters, the differential voltmeters of each test channel are driven to continuously acquire the instantaneous voltage values ​​at both ends of the probe from the trigger moment to obtain voltage data.

[0008] In conjunction with the first aspect, in a fourth implementation of the first aspect of the present invention, the step of dividing the voltage data by the test current to obtain an instantaneous contact resistance sequence, and calculating the resistance stabilization rate of each probe based on the instantaneous contact resistance sequence, includes: By iterating through all sampling points in the voltage data, the voltage value of each sampling point is divided by the test current to obtain the instantaneous contact resistance sequence of each probe. The initial contact resistance is obtained by summing and averaging the first i sampling points of the instantaneous contact resistance sequence, and the steady-state contact resistance is obtained by summing and averaging the last i sampling points of the instantaneous contact resistance sequence. Calculate the resistance difference between the initial contact resistance and the steady-state contact resistance, and divide the resistance difference by the time window to obtain the resistance stabilization rate.

[0009] In conjunction with the first aspect, in the fifth implementation of the first aspect of the present invention, the step of selecting the probe corresponding to the maximum resistance stabilization rate as the reference probe, and calculating the resistance stabilization rate difference between the remaining probes and the reference probe, divided by the reference value, to obtain the rate deviation ratio of each probe, includes: Select the probe corresponding to the maximum value of the resistance stabilization rate as the reference probe, and set the maximum value of the resistance stabilization rate as the resistance reference value. For each probe in the test group other than the reference probe, the resistance stabilization rate deviation between the resistance reference value and the resistance stabilization rate of each probe is calculated. Divide the resistance stability rate deviation by the resistance reference value to obtain the rate deviation ratio.

[0010] In conjunction with the first aspect, in a sixth implementation of the first aspect of the present invention, the step of screening probes whose rate deviation ratio exceeds a preset threshold as abnormal probes includes: Multiply the rate deviation ratio of each probe by the calibration coefficient, the probe pressing speed, and the time window to obtain the equivalent height deviation value; Probes with a rate deviation ratio exceeding a preset threshold are identified as abnormal probes, and their global number, rate deviation ratio, equivalent height deviation value, and test channel number are recorded.

[0011] Secondly, the present invention provides a MEMS probe card testing device, the MEMS probe card testing device comprising: The grouping module is used to group the N probes of the MEMS probe card under test into M test channel configuration tables. The voltage acquisition module is used to configure test circuits for the probes of each test group based on the test channel configuration table and to acquire voltage data of each probe during the process of the probe pressing down to contact the substrate. The calculation module is used to divide the voltage data by the test current to obtain the instantaneous contact resistance sequence, and calculate the resistance stabilization rate of each probe based on the instantaneous contact resistance sequence. The reference selection module is used to select the probe corresponding to the maximum resistance stability rate as the reference probe, calculate the resistance stability rate difference between the remaining probes and the reference probe, divide it by the reference value, and obtain the rate deviation ratio of each probe. The filtering module is used to filter probes whose rate deviation ratio exceeds a preset threshold as abnormal probes.

[0012] A third aspect of the present invention provides a computer device, comprising: a memory and at least one processor, wherein the memory stores instructions; the at least one processor invokes the instructions in the memory to cause the computer device to execute the above-described MEMS probe card testing method.

[0013] A fourth aspect of the present invention provides a computer-readable storage medium storing instructions that, when executed on a computer, cause the computer to perform the above-described MEMS probe card testing method.

[0014] The technical solution provided by this invention defines initial contact resistance, steady-state contact resistance, and resistance stabilization rate to describe the evolution of the probe contact interface from an initial unstable state to a stable conductive state. The resistance stabilization rate reflects the probe contact establishment speed and is influenced by the coupling effect of the actual contact time, the contact area expansion rate, and the oxide film breakdown process. By converting the difference in resistance stabilization rate into an equivalent height deviation, this invention establishes a mapping relationship from electrical timing characteristics to mechanical coplanarity parameters, enabling the identification of abnormal probes with height deviations without additional optical or mechanical measurement equipment. This invention employs a spatial grouping strategy to ensure sufficient spacing between probes in the same group to avoid mechanical coupling interference and electromagnetic crosstalk, guaranteeing the independence and accuracy of multi-channel parallel test data. Adaptive compensation testing further distinguishes between compensable coplanarity deviations and permanent mechanical defects, thereby improving the accuracy of MEMS probe card testing. Attached Figure Description

[0015] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is a schematic diagram of the steps of the MEMS probe card testing method in an embodiment of the present invention; Figure 2 This is a schematic diagram of the MEMS probe card testing device in an embodiment of the present invention; Figure 3 This is a schematic block diagram of the structure of the computer device in an embodiment of the present invention. Detailed Implementation

[0017] This invention provides a MEMS probe card testing method, apparatus, device, and storage medium. The terms "first," "second," "third," "fourth," etc. (if present)," in the specification, claims, and accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" or "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or devices.

[0018] For ease of understanding, the specific process of the embodiments of the present invention is described below. Please refer to [link / reference]. Figure 1 One embodiment of the MEMS probe card testing method in this invention includes: Step S1: Group the N probes of the MEMS probe card under test to obtain a test channel configuration table for M test groups; It is understood that the executing entity of this invention can be a MEMS probe card testing device, a terminal, or a server; no specific limitation is made here. This embodiment of the invention will be described using a server as an example.

[0019] Specifically, a two-dimensional planar coordinate system is established based on the array structure of the MEMS probe card under test. Taking the first probe at the top left corner of the probe array as the origin, an XY plane reference coordinate frame is constructed, and the origin probe is defined as the starting probe. The physical layout information of all N probes is extracted using the array layout or CAD data to obtain the relative position coordinates (x, y, y) of each probe in the array. i , y iThe algorithm calculates the arrangement distance between adjacent probes to obtain the standard pitch period p in the horizontal and vertical directions, forming an array parameter set describing the probe geometry and spatial topology. Based on the coordinate information and pitch period parameters, a row-first traversal strategy is adopted. Starting from the initial probe, a probe is selected every pitch period according to the principle of spatial uniformity. Probes that meet the distance constraint are sequentially assigned to the same test group. The Euclidean distance between probes in each group in the two-dimensional coordinate space is greater than or equal to k·p (where k is the distance control coefficient, for example, 3), to ensure that probes do not interfere with each other due to mechanical coupling or electromagnetic crosstalk during the actual contact process of the probe card. After screening and grouping under spatial constraints, all N probes are assigned to M test groups, each containing m probes, satisfying the integer relationship N = M × m. A channel mapping is established for each probe in each group, specifying its corresponding test channel number, and recording the probe's global array number, position coordinates, and test group number, thereby generating a test channel configuration table containing structural information such as test channel identifier, probe number, and spatial coordinates.

[0020] Step S2: Configure test circuits for the probes of each test group based on the test channel configuration table and collect voltage data of each probe during the process of the probe pressing down to contact the substrate; Specifically, according to the test channel configuration table, a Kelvin four-wire independent test loop is configured for each probe in each test group. Each probe is configured with four wires. Two of the wires form a current injection path. The first wire is connected from the positive output of the constant current source to the conductive support end of the target probe after being selected by a relay matrix. At the same time, the second wire is connected from the negative terminal of the constant current source to the ground reference layer of the substrate under test, forming a stable current loop. The other two wires form a high-impedance voltage measurement path. The third wire is connected from the positive input of the differential voltmeter to the sampling point of the conductive support end of the probe in a high-impedance manner. At the same time, the fourth wire is connected from the negative input of the differential voltmeter to the Kelvin dedicated ground point on the substrate, so that the voltage sampling is not affected by the common return current and forms a high-precision voltage measurement loop. After constructing the complete test loop, the constant current source is set with a current amplitude parameter I0 and a high output impedance parameter Z0 suitable for MEMS probe contact measurement, for example, I0 = 5mA, Z0 > 1MΩ, to meet the requirements of test current stability and weak voltage signal capture, and to ensure that the upper limit of the overall system operating voltage is not exceeded. The control probe card carrier platform is lowered vertically at a constant speed v (e.g., 0.5 mm / s) from its initial suspended height to the contact area. When any probe tip first contacts the surface of the substrate under test, the embedded force sensor generates a digital pulse signal for the contact event. This trigger signal is detected by the main control system and, as a synchronous start command, simultaneously activates the constant current sources and differential voltmeters of all test channels, putting them into sampling mode. The differential voltmeters operate at a fixed sampling frequency fs (e.g., 10 kHz) within a preset sampling time window [t0, t...].n The voltage values ​​at both ends of each probe are continuously collected to obtain a voltage time-series data stream, forming a two-dimensional voltage data matrix V[m×n] covering all m channels and n sampling points for each channel.

[0021] Step S3: Divide the voltage data by the test current to obtain the instantaneous contact resistance sequence, and calculate the resistance stabilization rate of each probe based on the instantaneous contact resistance sequence. Specifically, the voltage timing data of each probe acquired within the test time window is traversed and processed. A point-by-point processing operation is performed on the voltage values ​​of the n sampling points corresponding to each probe channel, and the voltage value V at each sampling time is processed. j (t i Dividing by the preset constant test current amplitude I0, the instantaneous contact resistance R at the corresponding moment is calculated based on Ohm's law. j (t i )=V j (t i ) / I0, constructing a resistance time series R that continuously characterizes the evolution of the probe contact state. j ={R j (t0),R j (t1),..., R j (t n To extract typical indicators representing the changes in electrical performance at the initial and final stages of probe contact behavior, the resistance values ​​of the first i sampling points (e.g., i=10) in the resistance time series are summed and the arithmetic mean is taken to obtain the initial contact resistance R. 0j The resistance characteristic is taken as the value of the probe when it first contacts the substrate and before a complete conductive interface is formed. Simultaneously, the same processing procedure is repeated for the resistance values ​​of the last i sampling points in the resistance sequence, and their average value is taken to form the steady-state contact resistance R∞. j This reflects the final conductivity performance of the probe after surface adhesion is stable and the metal oxide film is broken down under constant contact force. The difference between the initial contact resistance and the steady-state contact resistance is calculated, representing the magnitude of resistance evolution from high to low during the entire contact process. This resistance difference is then divided by the test time window length T = t. n -t0 yields the resistance steady-state rate λ, which is the rate of change of resistance per second. j = ΔR j / T. The resistance stabilization rate quantifies how quickly a probe transitions from the initial contact stage to the stable conduction stage; a higher value indicates a faster contact establishment process and a more rapid formation of the conductive path. The entire process is executed in parallel across all probe channels, constructing a data matrix containing three parameters: initial contact resistance, steady-state contact resistance, and resistance stabilization rate for all probes.

[0022] Step S4: Select the probe corresponding to the maximum resistance stability rate as the reference probe, calculate the resistance stability rate difference between the remaining probes and the reference probe, divide it by the reference value, and obtain the rate deviation ratio of each probe. Specifically, all resistance stabilization rate data are traversed and searched to select the probe with the highest resistance stabilization rate value in the test group. This probe is designated as the reference probe, and its corresponding maximum resistance stabilization rate value is defined as the resistance reference value. Since the resistance stabilization rate reflects the speed at which the probe transitions from the initial contact state to the stable conducting state, and a higher rate indicates that the probe contacts the substrate earlier or at a lower height, the reference probe is physically considered to be the first probe in the test group to establish a stable electrical contact, exhibiting the most complete conduction process and the most ideal contact interface state. For the remaining m-1 probes in the same test group (excluding the reference probe), their resistance stabilization rates are acquired one by one. The difference between the reference value and the rate value corresponding to each probe is calculated to obtain the resistance stabilization rate deviation, which describes the relative lag of each probe in contact establishment speed. Dividing the rate deviation by the resistance reference value yields the normalized rate deviation ratio, defined as the rate deviation ratio of probe j, with a value range of [0,1]. A rate deviation ratio of 0 indicates that the probe's contact behavior is perfectly synchronized with the reference probe, exhibiting excellent coplanarity. Conversely, a gradually increasing rate deviation ratio indicates a significant contact delay, suggesting unfavorable deviations in the probe's geometric height or contact conditions compared to the reference probe. The deviation calculation process is performed independently within each test group, forming a set of referential and comparable rate deviation ratios.

[0023] Step S5: Select probes whose rate deviation ratio exceeds a preset threshold as abnormal probes.

[0024] Specifically, based on the rate deviation ratio of each probe, combined with known calibration coefficients, probe pressing speed, and sampling time window length, a height estimation calculation is performed on each probe. The rate deviation ratio is multiplied by a constant coefficient, speed, and time to obtain the equivalent height deviation. The equivalent height deviation reflects the estimated contact height caused by the time delay in establishing stable contact for each probe under the same pressing speed and sampling time. Physically, this manifests as insufficient effective contact time due to the probe contacting the substrate later, resulting in an inadequate contact resistance decrease process, thus exhibiting a smaller resistance stabilization rate and a larger deviation ratio, ultimately leading to a larger equivalent height deviation value. A unified rate deviation ratio judgment threshold (e.g., 0.15) is set as the boundary benchmark for distinguishing normal and abnormal probes in the coplanarity evaluation of MEMS probe cards. A logical comparison operation is performed on each probe: when its corresponding rate deviation ratio is greater than the rate deviation ratio judgment threshold, it can be determined that the current probe has contact lag behavior, indicating that its height state or mechanical response characteristics have exceeded the coplanarity deviation tolerance allowed by the manufacturing or testing process, and it is marked as an abnormal probe. For each anomalous probe that meets the criteria, its corresponding global ID in the test channel configuration table, the currently calculated rate deviation ratio, the derived equivalent height deviation, and the assigned test channel ID are simultaneously extracted and recorded, and assembled into an anomalous probe data record. All anomalous probes that meet the criteria are collected into the anomalous probe set.

[0025] In one specific embodiment, the process of performing step S1 may specifically include the following steps: A planar coordinate system is established with the first probe in the upper left corner of the MEMS probe card array under test as the origin. The position coordinates and pitch period of each of the N probes are obtained to obtain the probe array parameters. Based on the probe array parameters, starting from the initial probe, one probe is selected at each interval and assigned to the same test group, resulting in M ​​test groups. A test channel configuration table for the M test groups is then constructed.

[0026] Specifically, a geometric model of the overall structure of the MEMS probe card is performed. The first probe located at the upper left corner of the array is selected as the origin and its position is defined as (0, 0). A two-dimensional Cartesian coordinate system is constructed based on this. In the coordinate system, the X-axis points to the horizontal direction of the array, and the Y-axis points to the vertical direction of the array, forming a spatial positioning framework covering the entire probe array. Under the coordinate system, the N probes in the array are traversed, and the physical coordinate position of each probe in the actual layout diagram is extracted. Its two-dimensional coordinate value (x, y) relative to the origin is recorded. i , y iSimultaneously, the standard pitch period *p* is calculated based on the center-to-center distance between any two adjacent probes in the horizontal or vertical direction, and the pitch period is considered as the structural reference of the array unit. Given the probe coordinates and pitch period, starting from the top left probe, the entire array is traversed sequentially in row-first or column-first order, using a fixed pitch interval as the selection step size. One probe is selected at every interval *p* and assigned to the same test group, forming a preliminary group set. To prevent mutual interference between adjacent probes due to mechanical deformation or electromagnetic parasitic coupling, a minimum distance control strategy is introduced, requiring that the Euclidean distance between any probes in the same group in the XY plane satisfy a condition not less than *k*p, where *k* is a preset spatial safety factor, such as 3, to ensure that the probes within the test group do not cause resistance measurement errors due to array structure coupling during synchronous contact testing. This iterative allocation is continued until all N probes are completely assigned to M test groups, each containing *m* probes, satisfying the integer relationship N = M × *m. While completing the spatial grouping, in order to achieve a one-to-one correspondence between test channels and probes, a test channel configuration table is constructed based on the probe's global number, spatial location, and group information. Each group's j-th probe corresponds to a unique test channel number, and a mapping relationship is established between the test channel number and parameters such as the probe's global ID, spatial coordinates, and group to form the test channel configuration table.

[0027] The process involves several steps. Based on the probe array parameters, starting from the initial probe, one probe is selected at intervals of one pitch period and assigned to the same test group, resulting in M ​​test groups. This includes: calculating the Euclidean distance between any two probes within the same test group, determining if the Euclidean distance satisfies the minimum spacing constraint condition of at least three times the pitch period, and obtaining the spatial constraint verification results for each test group; marking probe pairs that do not meet the minimum spacing constraint condition, calculating the deviation between the actual distance and the minimum spacing requirement, and obtaining the constraint violation probe set; removing probes with large distance deviations from their original test groups and reassigning them to adjacent test groups, verifying whether the distance between the reassigned probes and all probes in the new test groups meets the constraint condition, and obtaining the probe reassignment scheme; updating the probe members of each test group based on the probe reassignment scheme, and repeating the spatial constraint verification until the probe spacing in all test groups meets the minimum spacing constraint condition, resulting in the final test group configuration that satisfies the mechanical coupling interference avoidance requirement.

[0028] In one specific embodiment, the process of performing step S2 may specifically include the following steps: According to the test channel configuration table, four independent wires are configured for each test group probe. The current injection wire is connected to the probe conductive support end and the substrate ground layer to form a current loop. The voltage measurement wire is connected to the probe sampling point and the substrate ground point to form a voltage measurement loop, thus obtaining the test loop. The constant current source current amplitude and output impedance parameters are set for the test circuit. The MEMS probe card is controlled to press down from the suspended position at a constant speed to the first probe contact substrate trigger force sensor to obtain a synchronous trigger signal. The constant current source and differential voltmeter of each test channel are activated based on the synchronous trigger signal. The instantaneous voltage values ​​at both ends of each probe are continuously collected within a preset time window at a fixed sampling frequency to obtain voltage data.

[0029] Specifically, based on the probe channel number, spatial coordinates, and group affiliation information recorded in the test channel configuration table, each probe is configured with a Kelvin four-wire connection structure in the hardware test system. This structure includes two current injection leads and two voltage measurement leads. The first branch (Force+) of the current injection leads connects to the conductive support end of the probe via a controllable relay array, while the second branch (Force...)... The constant current source return terminal is connected to the ground reference layer of the substrate under test, forming a stable closed current path; the first branch (Sense+) in the voltage measurement lead is connected from the positive input terminal of the high impedance differential voltmeter to the sampling point of the probe support terminal, and the second branch (Sense... Connect the negative input terminal of the voltmeter to the Kelvin grounding point on the substrate. This grounding point must be spatially separated from the grounding layer of the current loop to prevent interference from common impedance, thus constructing an independent test loop with anti-interference capability and high sampling accuracy. Set the current output amplitude and output impedance parameters of the constant current source to adapt to the contact characteristics of the MEMS probe card. The current amplitude I0 is controlled within a safe range that can break down the oxide film at the contact interface without causing thermal damage, typically 5mA, while the output impedance Z0 is higher than 1MΩ to suppress the dynamic response interference of the current source. Start the vertical downward pressure control process of the probe card carrier platform, controlling it to descend at a constant speed v from the initial suspended position. When any probe tip first contacts the substrate pad, the force sensor mounted on the card body or support mechanism is triggered to output a contact event signal. The contact event signal is transmitted to the main control unit through a high-speed digital interface as a synchronous start flag. After receiving the synchronous trigger signal, the main control system starts the constant current sources and differential voltmeters on all test channels, enters the synchronous sampling mode, and determines the sampling frequency fs (e.g., 10kHz) and sampling window duration t according to the system settings. n (e.g., 50ms) Continuously acquire instantaneous voltage data at both ends of each channel probe and record it as a time vector V. j (t iThe data are collected into a two-dimensional matrix form of voltage dataset V[m×n], where m is the total number of test channels and n is the total number of sampling points.

[0030] In one specific embodiment, the process of executing the steps of activating the constant current source and differential voltmeter of each test channel based on the synchronous trigger signal, and continuously acquiring the instantaneous voltage values ​​across each probe within a preset time window at a fixed sampling frequency to obtain voltage data can specifically include the following steps: After receiving the synchronization trigger signal, the constant current source of each test channel is started synchronously, injecting a constant amplitude test current into the conductive support end of each probe and forming a stable current loop through the substrate ground layer, thereby generating the current excitation state of each probe. Based on the differential voltmeter under current excitation, the sampling frequency and time window are set so that the sampling interval is equal to the reciprocal of the sampling frequency and the total number of sampling points is equal to the product of the time window and the sampling frequency, thus obtaining the voltage acquisition parameters. Based on the voltage acquisition parameters, the differential voltmeters of each test channel continuously acquire the instantaneous voltage values ​​at both ends of the probe from the trigger moment to obtain voltage data.

[0031] Specifically, during the downward stroke of the probe array control platform, a force sensor integrated into the card structure monitors the instantaneous event of the probe tip's first contact with the substrate under test. When the triggering condition is met, the force sensor outputs a digital trigger pulse. This pulse signal is received by the main control unit and used as a unified synchronization flag, driving the constant current source modules of all test channels into the excitation state. After synchronization, the constant current source corresponding to each channel begins to continuously inject a test current of a set amplitude (5mA) into the connected probe's conductive support end. The current flows through the probe structure, through the contact interface, and into the substrate under test via the injection wire, finally returning to the substrate's ground layer to form a complete closed stable current loop, establishing a continuous and constant amplitude current excitation environment in each channel. Based on the current excitation state, the sampling parameters of the differential voltmeter are configured for each channel, setting the sampling frequency fs (e.g., 10kHz) and the time window length t required for the test. n For example, with a sampling interval of 50ms, the sampling interval is determined to be Δt = 1 / fs = 0.1ms, and the total number of sampling points n = fs × t is derived. n =500 points, each probe generates a high-time-resolution dynamic voltage change record during the test cycle. After the voltage acquisition parameters are configured, the main control unit issues a unified sampling start command, driving all channels' differential voltmeters to enter continuous sampling mode from the synchronous trigger time t0, acquiring the instantaneous voltage response V across each probe under current excitation at a fixed frequency. j (t iThe voltage value is obtained in real time by a high-impedance sampling path formed by connecting the positive input terminal of the differential voltmeter to the probe support terminal and the negative input terminal to the Kelvin grounding point of the substrate. The sampling process continues within a set time window until the preset number of sampling points n is reached, forming a voltage time series set, which is then summarized to form a full-channel voltage data matrix V[m×n].

[0032] In one specific embodiment, the process of performing step S3 may specifically include the following steps: By iterating through all sampling points in the voltage data and dividing the voltage value of each sampling point by the test current, the instantaneous contact resistance sequence of each probe is obtained. The initial contact resistance is obtained by summing and averaging the first i sampling points of the instantaneous contact resistance sequence, and the steady-state contact resistance is obtained by summing and averaging the last i sampling points of the instantaneous contact resistance sequence. Calculate the resistance difference between the initial contact resistance and the steady-state contact resistance, and divide the resistance difference by the time window to obtain the resistance stabilization rate.

[0033] Specifically, voltage time-series data is acquired for each test channel within a fixed time window, where each channel corresponds to one probe, and the voltage sequence is represented as V. j ={V j (t0), V j (t1), ..., V j (t n )}, where t0 is the trigger time, t n Let n be the end time of the time window and n be the total number of sampling points. Iterate through all sampling point data in the voltage sequence, and combine this with the test current amplitude I0 provided by the constant current source. Based on Ohm's law R=V / I, perform point-to-point numerical calculations for each sampling point, and obtain the voltage value V at each moment. j (t i Dividing by I0, we obtain the instantaneous contact resistance value R at that moment. j (t i )=V j (t i ) / I0, construct the contact resistance time series R j ={R j (t0), R j (t1), ..., R j (t n The resistance sequence reflects the dynamic electrical contact behavior of the probe during the test. As the initial contact interface gradually evolves into a stable conductive path, the resistance value gradually converges from high to low. Statistical processing is performed on the first i and last i sampling points of the resistance sequence, where i is the set average window width, with a value of 10. For the first i sampling points R... j(t0) to R j (t i-1 Perform addition and summation, then divide by i to obtain the initial contact resistance R. 0j This represents the maximum average resistance when the probe tip first contacts the pad, before the interface is fully bonded and the conductive path is fully established; simultaneously, for the last i sampling points R of the resistance sequence... j (t n-i+1 ) to R j (t n Perform the same operation and calculate the arithmetic mean to obtain the steady-state contact resistance R∞. j represents the minimum resistance exhibited by the probe after forming a stable conductive channel under constant contact force. This is determined by calculating the difference ΔR between these two average values. j = R 0j R∞ j The magnitude of the resistance decrease is obtained, and the difference is divided by the length of the entire sampling time window, T=t. n t0 is used to calculate the rate at which the resistance decreases per unit time.

[0034] In one specific embodiment, the process of performing step S4 may specifically include the following steps: Select the probe corresponding to the maximum resistance stabilization rate as the reference probe, and set the maximum resistance stabilization rate as the resistance reference value. For each probe in the test group other than the reference probe, calculate the resistance stabilization rate deviation between the resistance reference value and the resistance stabilization rate of each probe. Divide the resistance stability rate deviation by the resistance reference value to obtain the rate deviation ratio.

[0035] Specifically, based on the resistance stabilization rate dataset, all resistance stabilization rate values ​​in each test group are compared and the maximum value is identified. The probe corresponding to the maximum value is set as the reference probe, and this maximum rate value is assigned as the resistance reference value, representing the ideal state with the fastest contact conduction channel establishment in the entire test group. For all probes in the same group except the reference probe, the resistance stabilization rate difference calculation operation is performed sequentially. The resistance reference value is subtracted from the current probe's resistance stabilization rate to obtain the rate difference between it and the reference state, reflecting the negative impact of contact delay, conduction hysteresis, or structural bias on the probe's dynamic contact behavior. The rate difference of each probe is divided by the resistance reference value to obtain the normalized rate deviation ratio, with a value range limited to 0 to 1. 0 indicates perfect consistency with the reference probe and optimal coplanarity, while a deviation ratio closer to 1 indicates that the probe has the slowest contact and more serious contact problems. The entire deviation ratio calculation process is executed in parallel for all non-reference probes, resulting in a set of rate deviation ratios covering all probes in the test group.

[0036] The process includes, after obtaining the rate deviation ratio, a step of converting the rate deviation ratio into an equivalent height deviation based on the physical mechanism of contact delay: multiplying the rate deviation ratio of each probe by the probe pressing speed and multiplying by the acquisition time window to obtain the contact delay time of each probe relative to the reference probe; multiplying the contact delay time by the probe pressing speed to obtain the stroke difference value corresponding to the contact time delay of each probe relative to the reference probe during the pressing process; multiplying the stroke difference value by the calibration coefficient obtained through calibration using a known coplanarity standard sample to correct for the influence of elastic deformation of the contact interface and the surface oxide film breakdown process on the contact establishment speed, to obtain the equivalent height deviation value of each probe relative to the reference probe; establishing a correlation between the rate deviation ratio of each probe and the equivalent height deviation value to generate a coplanarity coupling measurement matrix containing normalized rate deviation and quantitative height deviation, to obtain the quantitative evaluation result of the coplanarity distribution of the probe array.

[0037] In one specific embodiment, the process of performing step S5 may specifically include the following steps: Multiply the rate deviation ratio of each probe by the calibration coefficient, the probe pressing speed, and the time window to obtain the equivalent height deviation value; Probes with a rate deviation ratio exceeding a preset threshold are identified as abnormal probes, and their global number, rate deviation ratio, equivalent height deviation value, and test channel number are recorded.

[0038] Specifically, an empirical calibration model is introduced. This model is established based on the mechanical-electrical contact coupling characteristics. The rate deviation ratio is multiplied by known calibration coefficients, pressing speed, and time window to obtain an equivalent height deviation value that approximates the actual contact height difference of the probe. For each probe, its rate deviation ratio is multiplied by a preset calibration coefficient. The calibration coefficient, derived from the fitting relationship between the measured height data and resistance response results of the standard probe card sample, is dimensionless and reflects the mapping ratio between the deviation ratio and height. The product result is then multiplied sequentially by the probe pressing speed and voltage sampling time window to obtain an equivalent height deviation value in millimeters or micrometers. The equivalent height deviation value reflects the geometric height difference of the probe relative to the reference contact surface. To identify probes with obvious structural anomalies or contact lag, a rate deviation ratio threshold is set, for example, 0.15. The deviation ratios of all probes are compared item by item. When the deviation ratio of a probe exceeds the preset threshold, it is determined that it has an unacceptable coplanarity deviation and is an abnormal target that should be marked and tracked during the testing process. For each probe identified as anomalous, its global ID and assigned test channel number are extracted from the channel configuration table. These are then combined with the currently calculated rate deviation ratio and equivalent height deviation value to generate a structured data entry. All probes determined to be anomalous are added to the anomalous probe set.

[0039] The process includes the following steps after obtaining the abnormal probe: performing adaptive compensation testing on the abnormal probe and determining permanent defects: The test channels of the abnormal probes recorded in the abnormal probe set are closed, leaving only the abnormal probes' test channels active. A preset compensation amount is added to the downward stroke of the abnormal probes to subject them to greater contact force, resulting in a compensation test configuration for the abnormal probes. Based on this configuration, the abnormal probes undergo repeated voltage data acquisition, instantaneous contact resistance sequence calculation, and resistance stabilization rate extraction processes to obtain a secondary test resistance stabilization rate under increased contact force conditions. The rate deviation ratio of the abnormal probes relative to the reference probes is recalculated based on the secondary test resistance stabilization rate. This secondary rate deviation ratio is compared with a preset threshold to obtain a compensation effect evaluation result for the abnormal probes. Based on the compensation effect evaluation result, probes whose rate deviation ratio still exceeds the preset threshold after the secondary test are classified as having permanent mechanical defects caused by probe tip wear or support structure failure. Probes whose rate deviation ratio drops below the threshold after the secondary test are classified as having compensable coplanarity deviations, resulting in a probe quality grading evaluation report containing classification information for permanent defect probes and compensable deviation probes.

[0040] The process includes, after obtaining the resistance stabilization rate, steps for dividing the instantaneous contact resistance sequence into contact evolution stages and performing synchronicity analysis: The resistance decrease rate between adjacent sampling points is calculated for the instantaneous contact resistance sequence of each probe. Based on the trend of the resistance decrease rate, the contact evolution process is divided into three consecutive stages: a rapid decrease stage, a transitional decrease stage, and a stable stage. The rapid decrease stage corresponds to the initial contact establishment process where the probe tip breaks through the oxide film on the pad surface; the transitional decrease stage corresponds to the gradual expansion of the contact area; and the stable stage corresponds to the steady-state conduction process after the contact interface is fully bonded. The contact evolution stage division results for each probe are obtained. The duration percentage and average resistance decrease rate of each stage are calculated based on the contact evolution stage division results. Stages with a rapid decrease stage duration percentage below a preset lower limit or a transitional decrease stage duration percentage below a preset lower limit are considered stable. Probes with a time percentage exceeding a preset upper limit are marked as abnormal probes in the contact establishment process, and the phased contact characteristic parameters of each probe are obtained. A temporal synchronization analysis is performed on the contact evolution phase division results of each probe within the test group, calculating the delay time between the start time of the rapid descent phase and the trigger time. The standard deviation of the delay time of probes in the same group is statistically analyzed as the contact temporal dispersion. When the contact temporal dispersion exceeds a preset threshold, it is determined that the test group has significant coplanarity inconsistency, resulting in a contact synchronization evaluation result at the test group level. Based on the phased contact characteristic parameters and the contact synchronization evaluation results, the resistance stabilization rate is corrected. The rate deviation of probes with abnormal contact establishment processes or excessive contact temporal dispersion is reduced to lower the threshold to improve the sensitivity of abnormal probe identification, resulting in an adaptive abnormal probe identification criterion that integrates multi-dimensional contact quality indicators.

[0041] The MEMS probe card testing method in the embodiments of the present invention has been described above. The MEMS probe card testing device in the embodiments of the present invention will be described below. Please refer to [link / reference]. Figure 2 One embodiment of the MEMS probe card testing device in this invention includes: Grouping module 201 is used to group the N probes of the MEMS probe card under test to obtain a test channel configuration table of M test groups; The voltage acquisition module 202 is used to configure test circuits for the probes of each test group based on the test channel configuration table and to acquire voltage data of each probe during the process of the probe pressing down to contact the substrate. The calculation module 203 is used to divide the voltage data by the test current to obtain the instantaneous contact resistance sequence, and to calculate the resistance stabilization rate of each probe based on the instantaneous contact resistance sequence. The reference selection module 204 is used to select the probe corresponding to the maximum resistance stability rate as the reference probe, calculate the resistance stability rate difference between the remaining probes and the reference probe, divide it by the reference value, and obtain the rate deviation ratio of each probe. The screening module 205 is used to screen probes whose rate deviation ratio exceeds a preset threshold as abnormal probes.

[0042] Reference Figure 3 This invention also provides a computer device, which can be a server, and its internal structure can be as follows: Figure 3 As shown, the computer device includes a processor, memory, display screen, input device, network interface, and database connected via a system bus. The processor provides computing and control capabilities. The memory includes a non-volatile storage medium and internal memory. The non-volatile storage medium stores the operating system, computer programs, and database. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage medium. The database stores the data corresponding to this embodiment. The network interface is used to communicate with external terminals via a network connection. When the computer program is executed by the processor, it implements the above-described method.

[0043] Those skilled in the art will understand that Figure 3 The structures shown are merely block diagrams of some structures related to the present invention and do not constitute a limitation on the computer devices on which the present invention is applied.

[0044] An embodiment of the present invention also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the above-described method. It is understood that the computer-readable storage medium in this embodiment can be a volatile readable storage medium or a non-volatile readable storage medium.

[0045] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments of the above methods. Any references to memory, storage, databases, or other media used in the present invention and embodiments can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in various forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual-rate SDRAM (SSRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), Rambus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM, etc.

[0046] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0047] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0048] The above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A MEMS probe card testing method, characterized in that, include: The N probes of the MEMS probe card under test are grouped to obtain a test channel configuration table for M test groups; Based on the test channel configuration table, test circuits are configured for the probes of each test group, and the constant current source current amplitude and output impedance parameters are set for the test circuits. The MEMS probe card is controlled to press down from the suspended position at a constant speed to the first probe contact substrate trigger force sensor to obtain a synchronous trigger signal. Based on the synchronous trigger signal, the constant current source and differential voltmeter of each test channel are activated, and the instantaneous voltage values ​​at both ends of each probe are continuously collected within a preset time window at a fixed sampling frequency to obtain voltage data. Dividing the voltage data by the test current yields an instantaneous contact resistance sequence, and the resistance stabilization rate of each probe is calculated based on this sequence. Specifically, this involves: traversing all sampling points in the voltage data, dividing the voltage value of each sampling point by the test current to obtain an instantaneous contact resistance sequence for each probe; summing and averaging the first i sampling points of the instantaneous contact resistance sequence to obtain the initial contact resistance, and summing and averaging the last i sampling points of the instantaneous contact resistance sequence to obtain the steady-state contact resistance; calculating the resistance difference between the initial contact resistance and the steady-state contact resistance, and dividing the resistance difference by a time window to obtain the resistance stabilization rate. The probe corresponding to the maximum resistance stability rate is selected as the reference probe. The resistance stability rate difference between the remaining probes and the reference probe is calculated and divided by the reference value to obtain the rate deviation ratio of each probe. Probes whose rate deviation ratio exceeds a preset threshold are selected as abnormal probes.

2. The MEMS probe card testing method according to claim 1, characterized in that, The N probes of the MEMS probe card under test are grouped to obtain a test channel configuration table for M test groups, including: A planar coordinate system is established with the first probe in the upper left corner of the MEMS probe card array under test as the origin. The position coordinates and pitch period of each of the N probes are obtained to obtain the probe array parameters. Based on the probe array parameters, starting from the initial probe, one probe is selected at intervals and assigned to the same test group, resulting in M ​​test groups. A test channel configuration table for the M test groups is then constructed.

3. The MEMS probe card testing method according to claim 1, characterized in that, The configuration of test loops for probes of each test group based on the test channel configuration table includes: According to the test channel configuration table, four independent wires are configured for each test group probe. The current injection wire is connected to the probe conductive support end and the substrate ground layer to form a current loop. The voltage measurement wire is connected to the probe sampling point and the substrate ground point to form a voltage measurement loop, thus obtaining the test loop.

4. The MEMS probe card testing method according to claim 3, characterized in that, The constant current source and differential voltmeter of each test channel are activated based on the synchronous trigger signal, and the instantaneous voltage values ​​across each probe are continuously collected within a preset time window at a fixed sampling frequency to obtain voltage data, including: Upon receiving the synchronous trigger signal, the constant current source of each test channel is started synchronously, injecting a constant amplitude test current into the conductive support end of each probe and forming a stable current loop through the substrate grounding layer, thereby generating the current excitation state of each probe. Based on the differential voltmeter under the current excitation state, the sampling frequency and time window are set so that the sampling interval is equal to the reciprocal of the sampling frequency and the total number of sampling points is equal to the product of the time window and the sampling frequency, thus obtaining the voltage acquisition parameters. Based on the voltage acquisition parameters, the differential voltmeters of each test channel are driven to continuously acquire the instantaneous voltage values ​​at both ends of the probe from the trigger moment to obtain voltage data.

5. The MEMS probe card testing method according to claim 1, characterized in that, The step of selecting the probe corresponding to the maximum resistance stabilization rate as the reference probe, and calculating the resistance stabilization rate difference between the remaining probes and the reference probe, divided by the reference value, to obtain the rate deviation ratio of each probe, includes: The probe corresponding to the maximum value of the resistance stabilization rate is selected as the reference probe, and the maximum value of the resistance stabilization rate is used as the resistance reference value. For each probe in the test group other than the reference probe, the resistance stabilization rate deviation between the resistance reference value and the resistance stabilization rate of each probe is calculated. Divide the resistance stability rate deviation by the resistance reference value to obtain the rate deviation ratio.

6. The MEMS probe card testing method according to claim 1, characterized in that, The step of screening probes whose rate deviation ratio exceeds a preset threshold as abnormal probes includes: Multiply the rate deviation ratio of each probe by the calibration coefficient, the probe pressing speed, and the time window to obtain the equivalent height deviation value; Probes with a rate deviation ratio exceeding a preset threshold are identified as abnormal probes, and their global number, rate deviation ratio, equivalent height deviation value, and test channel number are recorded.

7. A MEMS probe card testing device, characterized in that, For performing the MEMS probe card testing method as described in any one of claims 1-6, the MEMS probe card testing device comprises: The grouping module is used to group the N probes of the MEMS probe card under test into M test channel configuration tables. The voltage acquisition module is used to configure test circuits for the probes of each test group based on the test channel configuration table and to acquire voltage data of each probe during the process of the probe pressing down to contact the substrate. The calculation module is used to divide the voltage data by the test current to obtain the instantaneous contact resistance sequence, and calculate the resistance stabilization rate of each probe based on the instantaneous contact resistance sequence. The reference selection module is used to select the probe corresponding to the maximum resistance stability rate as the reference probe, calculate the resistance stability rate difference between the remaining probes and the reference probe, divide it by the reference value, and obtain the rate deviation ratio of each probe. The filtering module is used to filter probes whose rate deviation ratio exceeds a preset threshold as abnormal probes.

8. A computer device, characterized in that, It includes a memory and a processor, the memory storing a computer program that can run on the processor, and the processor executing the computer program to implement the MEMS probe card testing method according to any one of claims 1 to 6.

9. A computer-readable storage medium, characterized in that, It stores a computer program that, when run by a processor, causes the processor to perform the MEMS probe card testing method as described in any one of claims 1 to 6.

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