Semiconductor structure, method of forming semiconductor devices and thin film transistors

By forming source and drain contact via structures and electrically doping the active layer in thin-film transistors, the problem of balancing high carrier mobility and low cutoff current in TFT manufacturing is solved, thereby improving performance stability and reliability, and making it suitable for back-end process technology.

CN122373385APending Publication Date: 2026-07-10TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Filing Date
2025-12-29
Publication Date
2026-07-10

AI Technical Summary

Technical Problem

The current manufacturing of thin-film transistors (TFTs) faces the challenge of balancing high carrier mobility and low cutoff current, and their integration into back-end processes presents complexity and performance inconsistencies.

Method used

Gate electrode, source electrode, and drain electrode are formed within the dielectric material layer, and source and drain contact via structures are formed through the gate dielectric layer. Combined with the electric dopant implantation of the active layer, the doping process is controlled by an ion implantation mask to reduce damage to the active layer.

Benefits of technology

It achieves a balance between high carrier mobility and low cutoff current, reduces defects, and improves the performance stability and reliability of thin-film transistors, making them suitable for integration into back-end manufacturing processes.

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Abstract

A method for forming a semiconductor device includes: forming a gate electrode, a source electrode, and a drain electrode within a first dielectric material layer; forming a gate dielectric layer above the first dielectric material layer; forming a source contact via structure and a drain contact via structure through the gate dielectric layer on the source and drain electrodes; and forming an active layer above the gate dielectric layer. The end portions of the active layer can be transformed into source and drain regions by implanting an electrical dopant. The semiconductor structure includes: a gate electrode, a source electrode, and a drain electrode located within the first dielectric material layer; a gate dielectric layer located above the first dielectric material layer; source and drain contact via structures extending vertically through the gate dielectric layer and contacting the source and drain electrodes; and an active layer located above the gate dielectric layer. Embodiments of this application also relate to semiconductor structures, methods for forming semiconductor devices, and thin-film transistors.
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